US8487411B2 - Multiple patterning using improved patternable low-κ dielectric materials - Google Patents
Multiple patterning using improved patternable low-κ dielectric materials Download PDFInfo
- Publication number
- US8487411B2 US8487411B2 US13/407,141 US201213407141A US8487411B2 US 8487411 B2 US8487411 B2 US 8487411B2 US 201213407141 A US201213407141 A US 201213407141A US 8487411 B2 US8487411 B2 US 8487411B2
- Authority
- US
- United States
- Prior art keywords
- substituted
- patterned
- carbosilane
- oxycarbosilane
- polymer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000059 patterning Methods 0.000 title description 60
- 239000003989 dielectric material Substances 0.000 title description 20
- 239000006117 anti-reflective coating Substances 0.000 claims abstract description 144
- 239000004065 semiconductor Substances 0.000 claims abstract description 63
- 239000000463 material Substances 0.000 claims description 204
- 229920000642 polymer Polymers 0.000 claims description 196
- 229920001577 copolymer Polymers 0.000 claims description 132
- 239000000178 monomer Substances 0.000 claims description 109
- 239000000203 mixture Substances 0.000 claims description 81
- 229910000077 silane Inorganic materials 0.000 claims description 80
- 125000004417 unsaturated alkyl group Chemical group 0.000 claims description 80
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims description 77
- 150000004756 silanes Chemical class 0.000 claims description 49
- 238000004132 cross linking Methods 0.000 claims description 41
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 34
- 229910052799 carbon Inorganic materials 0.000 claims description 30
- 229910052710 silicon Inorganic materials 0.000 claims description 30
- 229910052757 nitrogen Inorganic materials 0.000 claims description 21
- 229910052760 oxygen Inorganic materials 0.000 claims description 21
- 229910052796 boron Inorganic materials 0.000 claims description 19
- 229910052732 germanium Inorganic materials 0.000 claims description 19
- 229910052735 hafnium Inorganic materials 0.000 claims description 19
- 229910052739 hydrogen Inorganic materials 0.000 claims description 19
- 229910052718 tin Inorganic materials 0.000 claims description 19
- 229910052719 titanium Inorganic materials 0.000 claims description 19
- 229910052746 lanthanum Inorganic materials 0.000 claims description 18
- 229910052759 nickel Inorganic materials 0.000 claims description 18
- 229910052717 sulfur Inorganic materials 0.000 claims description 16
- 229910052731 fluorine Inorganic materials 0.000 claims description 15
- 239000003431 cross linking reagent Substances 0.000 claims description 14
- 239000013110 organic ligand Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 description 71
- -1 for example Substances 0.000 description 60
- 239000002253 acid Substances 0.000 description 57
- 239000000758 substrate Substances 0.000 description 53
- 230000008569 process Effects 0.000 description 40
- 238000000151 deposition Methods 0.000 description 36
- 239000002243 precursor Substances 0.000 description 36
- 230000008021 deposition Effects 0.000 description 32
- 125000000524 functional group Chemical group 0.000 description 31
- 229920002120 photoresistant polymer Polymers 0.000 description 31
- 239000007788 liquid Substances 0.000 description 30
- 238000011282 treatment Methods 0.000 description 30
- 229920002959 polymer blend Polymers 0.000 description 29
- 239000010410 layer Substances 0.000 description 25
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 22
- 125000000217 alkyl group Chemical group 0.000 description 21
- 239000000126 substance Substances 0.000 description 20
- 229920000734 polysilsesquioxane polymer Polymers 0.000 description 18
- 238000012545 processing Methods 0.000 description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 15
- 238000001723 curing Methods 0.000 description 15
- 230000003287 optical effect Effects 0.000 description 15
- 238000005530 etching Methods 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 13
- 150000001875 compounds Chemical class 0.000 description 13
- 210000002381 plasma Anatomy 0.000 description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 239000007789 gas Substances 0.000 description 12
- 238000010884 ion-beam technique Methods 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 239000002904 solvent Substances 0.000 description 12
- 238000010894 electron beam technology Methods 0.000 description 11
- 239000007791 liquid phase Substances 0.000 description 11
- 238000001459 lithography Methods 0.000 description 11
- 229920005573 silicon-containing polymer Polymers 0.000 description 11
- 0 C*C(C)C.[2H]*C(C)C Chemical compound C*C(C)C.[2H]*C(C)C 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 10
- 238000000576 coating method Methods 0.000 description 10
- 125000004122 cyclic group Chemical group 0.000 description 10
- 125000000753 cycloalkyl group Chemical group 0.000 description 10
- 230000005855 radiation Effects 0.000 description 10
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 241001120493 Arene Species 0.000 description 8
- 229920002413 Polyhexanide Polymers 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 8
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 8
- 150000002148 esters Chemical class 0.000 description 8
- 239000012071 phase Substances 0.000 description 8
- 239000000047 product Substances 0.000 description 8
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical class [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 8
- 150000004819 silanols Chemical class 0.000 description 8
- UQMGAWUIVYDWBP-UHFFFAOYSA-N silyl acetate Chemical class CC(=O)O[SiH3] UQMGAWUIVYDWBP-UHFFFAOYSA-N 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 238000010382 chemical cross-linking Methods 0.000 description 7
- 238000006482 condensation reaction Methods 0.000 description 7
- 238000005137 deposition process Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 239000012212 insulator Substances 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 238000009832 plasma treatment Methods 0.000 description 7
- 239000011148 porous material Substances 0.000 description 7
- 125000005372 silanol group Chemical group 0.000 description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 7
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 7
- 206010073306 Exposure to radiation Diseases 0.000 description 6
- 239000012159 carrier gas Substances 0.000 description 6
- 238000004090 dissolution Methods 0.000 description 6
- 230000010354 integration Effects 0.000 description 6
- LVHBHZANLOWSRM-UHFFFAOYSA-N itaconic acid Chemical compound OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- 125000006239 protecting group Chemical group 0.000 description 6
- 229910010271 silicon carbide Inorganic materials 0.000 description 6
- 125000001424 substituent group Chemical group 0.000 description 6
- 239000004971 Cross linker Substances 0.000 description 5
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 5
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 5
- 239000000654 additive Substances 0.000 description 5
- 125000003118 aryl group Chemical group 0.000 description 5
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 5
- 238000013036 cure process Methods 0.000 description 5
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 description 5
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 5
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- 229920003217 poly(methylsilsesquioxane) Polymers 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 5
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 5
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 description 5
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- CBXNXRUXGMOGIX-UHFFFAOYSA-N CCC.CCC1=CC=CC=C1.CCCC Chemical compound CCC.CCC1=CC=CC=C1.CCCC CBXNXRUXGMOGIX-UHFFFAOYSA-N 0.000 description 4
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 4
- 229920006397 acrylic thermoplastic Polymers 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 4
- 125000003545 alkoxy group Chemical group 0.000 description 4
- 230000008033 biological extinction Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 150000001721 carbon Chemical group 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000003618 dip coating Methods 0.000 description 4
- 238000009472 formulation Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 150000002430 hydrocarbons Chemical class 0.000 description 4
- 239000003607 modifier Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- ISXSCDLOGDJUNJ-UHFFFAOYSA-N tert-butyl prop-2-enoate Chemical compound CC(C)(C)OC(=O)C=C ISXSCDLOGDJUNJ-UHFFFAOYSA-N 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- XLLXMBCBJGATSP-UHFFFAOYSA-N 2-phenylethenol Chemical compound OC=CC1=CC=CC=C1 XLLXMBCBJGATSP-UHFFFAOYSA-N 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 208000037062 Polyps Diseases 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 150000001241 acetals Chemical class 0.000 description 3
- 150000001298 alcohols Chemical class 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- 230000003667 anti-reflective effect Effects 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 238000005266 casting Methods 0.000 description 3
- 238000000224 chemical solution deposition Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002170 ethers Chemical class 0.000 description 3
- UHKJHMOIRYZSTH-UHFFFAOYSA-N ethyl 2-ethoxypropanoate Chemical compound CCOC(C)C(=O)OCC UHKJHMOIRYZSTH-UHFFFAOYSA-N 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 3
- JESXATFQYMPTNL-UHFFFAOYSA-N mono-hydroxyphenyl-ethylene Natural products OC1=CC=CC=C1C=C JESXATFQYMPTNL-UHFFFAOYSA-N 0.000 description 3
- 239000003361 porogen Substances 0.000 description 3
- ZRLCXMPFXYVHGS-UHFFFAOYSA-N tetramethylgermane Chemical compound C[Ge](C)(C)C ZRLCXMPFXYVHGS-UHFFFAOYSA-N 0.000 description 3
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 3
- 229920002554 vinyl polymer Polymers 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- NHBMXLXMVPLQAX-UHFFFAOYSA-N 1,3-disiletane Chemical compound C1[SiH2]C[SiH2]1 NHBMXLXMVPLQAX-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- MPLNHMCMQUAYBJ-UHFFFAOYSA-N C1CC2CC1C1C3CCC(C3)C21.C1CC2CCC1C2.CCC.CCC.CCC.CCC(C)C1=CC=CC=C1.CCC1=CC=CC=C1.CCCC.CCCCC1=CC=CC=C1 Chemical compound C1CC2CC1C1C3CCC(C3)C21.C1CC2CCC1C2.CCC.CCC.CCC.CCC(C)C1=CC=CC=C1.CCC1=CC=CC=C1.CCCC.CCCCC1=CC=CC=C1 MPLNHMCMQUAYBJ-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 101000692259 Homo sapiens Phosphoprotein associated with glycosphingolipid-enriched microdomains 1 Proteins 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 150000001454 anthracenes Chemical class 0.000 description 2
- 125000000852 azido group Chemical group *N=[N+]=[N-] 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- AQEFLFZSWDEAIP-UHFFFAOYSA-N di-tert-butyl ether Chemical compound CC(C)(C)OC(C)(C)C AQEFLFZSWDEAIP-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000012777 electrically insulating material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000032050 esterification Effects 0.000 description 2
- 238000005886 esterification reaction Methods 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- VPVSTMAPERLKKM-UHFFFAOYSA-N glycoluril Chemical compound N1C(=O)NC2NC(=O)NC21 VPVSTMAPERLKKM-UHFFFAOYSA-N 0.000 description 2
- 125000001046 glycoluril group Chemical class [H]C12N(*)C(=O)N(*)C1([H])N(*)C(=O)N2* 0.000 description 2
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 125000006289 hydroxybenzyl group Chemical group 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000000671 immersion lithography Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052747 lanthanoid Inorganic materials 0.000 description 2
- 150000002602 lanthanoids Chemical class 0.000 description 2
- 238000002386 leaching Methods 0.000 description 2
- 239000003446 ligand Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 150000002825 nitriles Chemical class 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 2
- 125000000962 organic group Chemical group 0.000 description 2
- 125000005375 organosiloxane group Chemical group 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 231100000572 poisoning Toxicity 0.000 description 2
- 230000000607 poisoning effect Effects 0.000 description 2
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- AQRLNPVMDITEJU-UHFFFAOYSA-N triethylsilane Chemical compound CC[SiH](CC)CC AQRLNPVMDITEJU-UHFFFAOYSA-N 0.000 description 2
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- MCVVDMSWCQUKEV-UHFFFAOYSA-N (2-nitrophenyl)methyl 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)OCC1=CC=CC=C1[N+]([O-])=O MCVVDMSWCQUKEV-UHFFFAOYSA-N 0.000 description 1
- DLDWUFCUUXXYTB-UHFFFAOYSA-N (2-oxo-1,2-diphenylethyl) 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)OC(C=1C=CC=CC=1)C(=O)C1=CC=CC=C1 DLDWUFCUUXXYTB-UHFFFAOYSA-N 0.000 description 1
- XGQJGMGAMHFMAO-UHFFFAOYSA-N 1,3,4,6-tetrakis(methoxymethyl)-3a,6a-dihydroimidazo[4,5-d]imidazole-2,5-dione Chemical compound COCN1C(=O)N(COC)C2C1N(COC)C(=O)N2COC XGQJGMGAMHFMAO-UHFFFAOYSA-N 0.000 description 1
- YFOOEYJGMMJJLS-UHFFFAOYSA-N 1,8-diaminonaphthalene Chemical compound C1=CC(N)=C2C(N)=CC=CC2=C1 YFOOEYJGMMJJLS-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- NJQJGRGGIUNVAB-UHFFFAOYSA-N 2,4,4,6-tetrabromocyclohexa-2,5-dien-1-one Chemical compound BrC1=CC(Br)(Br)C=C(Br)C1=O NJQJGRGGIUNVAB-UHFFFAOYSA-N 0.000 description 1
- WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 description 1
- KUMMBDBTERQYCG-UHFFFAOYSA-N 2,6-bis(hydroxymethyl)-4-methylphenol Chemical compound CC1=CC(CO)=C(O)C(CO)=C1 KUMMBDBTERQYCG-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 1
- HBFXZOMNDOKZCW-UHFFFAOYSA-N 2-(3-triethoxysilylpropylcarbamoyloxy)ethyl 2-methylprop-2-enoate Chemical compound CCO[Si](OCC)(OCC)CCCNC(=O)OCCOC(=O)C(C)=C HBFXZOMNDOKZCW-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- KTWCUGUUDHJVIH-UHFFFAOYSA-N 2-hydroxybenzo[de]isoquinoline-1,3-dione Chemical compound C1=CC(C(N(O)C2=O)=O)=C3C2=CC=CC3=C1 KTWCUGUUDHJVIH-UHFFFAOYSA-N 0.000 description 1
- DUMULOJQEPDBLJ-UHFFFAOYSA-N 2-methyl-n-trimethylsilylprop-2-enamide Chemical compound CC(=C)C(=O)N[Si](C)(C)C DUMULOJQEPDBLJ-UHFFFAOYSA-N 0.000 description 1
- NXKOSHBFVWYVIH-UHFFFAOYSA-N 2-n-(butoxymethyl)-1,3,5-triazine-2,4,6-triamine Chemical compound CCCCOCNC1=NC(N)=NC(N)=N1 NXKOSHBFVWYVIH-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- WUGOQZFPNUYUOO-UHFFFAOYSA-N 2-trimethylsilyloxyethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCO[Si](C)(C)C WUGOQZFPNUYUOO-UHFFFAOYSA-N 0.000 description 1
- PIZBSFLIUVZJIU-UHFFFAOYSA-N 3-(3,5,7,9,11,13,15-heptacyclopentyl-2,4,6,8,10,12,14,16,17,18,19,20-dodecaoxa-1,3,5,7,9,11,13,15-octasilapentacyclo[9.5.1.13,9.15,15.17,13]icosan-1-yl)propyl 2-methylprop-2-enoate Chemical compound O1[Si](CCCOC(=O)C(=C)C)(O2)O[Si](O3)(C4CCCC4)O[Si](O4)(C5CCCC5)O[Si]1(C1CCCC1)O[Si](O1)(C5CCCC5)O[Si]2(C2CCCC2)O[Si]3(C2CCCC2)O[Si]41C1CCCC1 PIZBSFLIUVZJIU-UHFFFAOYSA-N 0.000 description 1
- OKQXCDUCLYWRHA-UHFFFAOYSA-N 3-[chloro(dimethyl)silyl]propyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCC[Si](C)(C)Cl OKQXCDUCLYWRHA-UHFFFAOYSA-N 0.000 description 1
- QXKMQBOTKLTKOE-UHFFFAOYSA-N 3-[dichloro(methyl)silyl]propyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCC[Si](C)(Cl)Cl QXKMQBOTKLTKOE-UHFFFAOYSA-N 0.000 description 1
- GBAQKTTVWCCNHH-UHFFFAOYSA-N 3-[dichloro(methyl)silyl]propyl prop-2-enoate Chemical compound C[Si](Cl)(Cl)CCCOC(=O)C=C GBAQKTTVWCCNHH-UHFFFAOYSA-N 0.000 description 1
- DOYKFSOCSXVQAN-UHFFFAOYSA-N 3-[diethoxy(methyl)silyl]propyl 2-methylprop-2-enoate Chemical compound CCO[Si](C)(OCC)CCCOC(=O)C(C)=C DOYKFSOCSXVQAN-UHFFFAOYSA-N 0.000 description 1
- LZMNXXQIQIHFGC-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propyl 2-methylprop-2-enoate Chemical compound CO[Si](C)(OC)CCCOC(=O)C(C)=C LZMNXXQIQIHFGC-UHFFFAOYSA-N 0.000 description 1
- MCDBEBOBROAQSH-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propyl prop-2-enoate Chemical compound CO[Si](C)(OC)CCCOC(=O)C=C MCDBEBOBROAQSH-UHFFFAOYSA-N 0.000 description 1
- NWBTXZPDTSKZJU-UHFFFAOYSA-N 3-[dimethyl(trimethylsilyloxy)silyl]propyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCC[Si](C)(C)O[Si](C)(C)C NWBTXZPDTSKZJU-UHFFFAOYSA-N 0.000 description 1
- JSOZORWBKQSQCJ-UHFFFAOYSA-N 3-[ethoxy(dimethyl)silyl]propyl 2-methylprop-2-enoate Chemical compound CCO[Si](C)(C)CCCOC(=O)C(C)=C JSOZORWBKQSQCJ-UHFFFAOYSA-N 0.000 description 1
- JBDMKOVTOUIKFI-UHFFFAOYSA-N 3-[methoxy(dimethyl)silyl]propyl 2-methylprop-2-enoate Chemical compound CO[Si](C)(C)CCCOC(=O)C(C)=C JBDMKOVTOUIKFI-UHFFFAOYSA-N 0.000 description 1
- ZCRUJAKCJLCJCP-UHFFFAOYSA-N 3-[methoxy(dimethyl)silyl]propyl prop-2-enoate Chemical compound CO[Si](C)(C)CCCOC(=O)C=C ZCRUJAKCJLCJCP-UHFFFAOYSA-N 0.000 description 1
- HBOYQHJSMXAOKY-UHFFFAOYSA-N 3-[methyl-bis(trimethylsilyloxy)silyl]propyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCC[Si](C)(O[Si](C)(C)C)O[Si](C)(C)C HBOYQHJSMXAOKY-UHFFFAOYSA-N 0.000 description 1
- YQFQCQOGRMUSGZ-UHFFFAOYSA-N 3-[methyl-bis(trimethylsilyloxy)silyl]propyl prop-2-enoate Chemical compound C[Si](C)(C)O[Si](C)(O[Si](C)(C)C)CCCOC(=O)C=C YQFQCQOGRMUSGZ-UHFFFAOYSA-N 0.000 description 1
- DMZPTAFGSRVFIA-UHFFFAOYSA-N 3-[tris(2-methoxyethoxy)silyl]propyl 2-methylprop-2-enoate Chemical compound COCCO[Si](OCCOC)(OCCOC)CCCOC(=O)C(C)=C DMZPTAFGSRVFIA-UHFFFAOYSA-N 0.000 description 1
- OFNISBHGPNMTMS-UHFFFAOYSA-N 3-methylideneoxolane-2,5-dione Chemical compound C=C1CC(=O)OC1=O OFNISBHGPNMTMS-UHFFFAOYSA-N 0.000 description 1
- DDBXVFIKLTXQRH-UHFFFAOYSA-N 3-silylpropylsilane Chemical compound [SiH3]CCC[SiH3] DDBXVFIKLTXQRH-UHFFFAOYSA-N 0.000 description 1
- DOGMJCPBZJUYGB-UHFFFAOYSA-N 3-trichlorosilylpropyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCC[Si](Cl)(Cl)Cl DOGMJCPBZJUYGB-UHFFFAOYSA-N 0.000 description 1
- LEPRPXBFZRAOGU-UHFFFAOYSA-N 3-trichlorosilylpropyl prop-2-enoate Chemical compound Cl[Si](Cl)(Cl)CCCOC(=O)C=C LEPRPXBFZRAOGU-UHFFFAOYSA-N 0.000 description 1
- URDOJQUSEUXVRP-UHFFFAOYSA-N 3-triethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CCO[Si](OCC)(OCC)CCCOC(=O)C(C)=C URDOJQUSEUXVRP-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- KBQVDAIIQCXKPI-UHFFFAOYSA-N 3-trimethoxysilylpropyl prop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C=C KBQVDAIIQCXKPI-UHFFFAOYSA-N 0.000 description 1
- BESKSSIEODQWBP-UHFFFAOYSA-N 3-tris(trimethylsilyloxy)silylpropyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCC[Si](O[Si](C)(C)C)(O[Si](C)(C)C)O[Si](C)(C)C BESKSSIEODQWBP-UHFFFAOYSA-N 0.000 description 1
- PPBAWVJOPQUAMY-UHFFFAOYSA-N 3-tris(trimethylsilyloxy)silylpropyl prop-2-enoate Chemical compound C[Si](C)(C)O[Si](O[Si](C)(C)C)(O[Si](C)(C)C)CCCOC(=O)C=C PPBAWVJOPQUAMY-UHFFFAOYSA-N 0.000 description 1
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical class C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 1
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- IPMITYIYYSUZGM-UHFFFAOYSA-N C1CC2CC1C1C3CCC(C3)C21.C1CC2CCC1C2.CC.CC.CC.CC(C)C1=CC=CC=C1.CC1=CC=CC=C1.CCC.CCCC1=CC=CC=C1 Chemical compound C1CC2CC1C1C3CCC(C3)C21.C1CC2CCC1C2.CC.CC.CC.CC(C)C1=CC=CC=C1.CC1=CC=CC=C1.CCC.CCCC1=CC=CC=C1 IPMITYIYYSUZGM-UHFFFAOYSA-N 0.000 description 1
- DRHVYRFKWRCWTA-UHFFFAOYSA-N C=NOCC1=NC(NCOC)=NC(N(O)CC)=N1.C=O.C=O.C=O.CCCCOCN1C(=O)N(COCCCC)C2C1N(COCCCC)C(=O)N2COCCCC.COCN1CCCN(C)C1=O.COCN1CN(C)CN(C)C1=O.COCN1COCN(C)C1=O.COCNC(OC)C1=NC(N(COC)COC)=NC(C)=N1 Chemical compound C=NOCC1=NC(NCOC)=NC(N(O)CC)=N1.C=O.C=O.C=O.CCCCOCN1C(=O)N(COCCCC)C2C1N(COCCCC)C(=O)N2COCCCC.COCN1CCCN(C)C1=O.COCN1CN(C)CN(C)C1=O.COCN1COCN(C)C1=O.COCNC(OC)C1=NC(N(COC)COC)=NC(C)=N1 DRHVYRFKWRCWTA-UHFFFAOYSA-N 0.000 description 1
- QSBCQKAQHVWPFY-UHFFFAOYSA-N CC(=O)C1CC2CCC1C2.CC(O)(C1CC2CCC1C2)C(F)(F)F.CC(O)(CC1CC2CCC1C2)C(F)(F)F.CCC.CCC.CCC.CCC(C)C1=CC=C(O)C=C1.CCCC(C(=O)O)C(F)(F)F.CCCC(C)(O)C(F)(F)F.CCCC(C)C(=O)O.CCCC(C)O.CCCC1=CC=C(CC(C)(C)O)C=C1.CCCC1=CC=C(O)C=C1.CCCCC(=O)O.CCCCC(C)(O)C(F)(F)F.CCCCC1=CC=C(CC(C)(C)O)C=C1.CCCCC1=CC=C(O)C=C1 Chemical compound CC(=O)C1CC2CCC1C2.CC(O)(C1CC2CCC1C2)C(F)(F)F.CC(O)(CC1CC2CCC1C2)C(F)(F)F.CCC.CCC.CCC.CCC(C)C1=CC=C(O)C=C1.CCCC(C(=O)O)C(F)(F)F.CCCC(C)(O)C(F)(F)F.CCCC(C)C(=O)O.CCCC(C)O.CCCC1=CC=C(CC(C)(C)O)C=C1.CCCC1=CC=C(O)C=C1.CCCCC(=O)O.CCCCC(C)(O)C(F)(F)F.CCCCC1=CC=C(CC(C)(C)O)C=C1.CCCCC1=CC=C(O)C=C1 QSBCQKAQHVWPFY-UHFFFAOYSA-N 0.000 description 1
- YNVQTNOCQPIQBN-UHFFFAOYSA-N CC(=O)C1CC2CCC1C2.CC(O)(C1CC2CCC1C2)C(F)(F)F.CC(O)(CC1CC2CCC1C2)C(F)(F)F.CCC.CCC.CCC.CCC.CCC(C)C1=CC=C(O)C=C1.CCCC(C)(O)C(F)(F)F.CCCC(C)O.CCCC1=CC=C(CC(C)(C)O)C=C1.CCCC1=CC=C(O)C=C1.CCCCC(C)(O)C(F)(F)F.CCCCC1=CC=C(CC(C)(C)O)C=C1.CCCCC1=CC=C(O)C=C1.CS(=O)(=O)NCC1CC2CCC1C2 Chemical compound CC(=O)C1CC2CCC1C2.CC(O)(C1CC2CCC1C2)C(F)(F)F.CC(O)(CC1CC2CCC1C2)C(F)(F)F.CCC.CCC.CCC.CCC.CCC(C)C1=CC=C(O)C=C1.CCCC(C)(O)C(F)(F)F.CCCC(C)O.CCCC1=CC=C(CC(C)(C)O)C=C1.CCCC1=CC=C(O)C=C1.CCCCC(C)(O)C(F)(F)F.CCCCC1=CC=C(CC(C)(C)O)C=C1.CCCCC1=CC=C(O)C=C1.CS(=O)(=O)NCC1CC2CCC1C2 YNVQTNOCQPIQBN-UHFFFAOYSA-N 0.000 description 1
- MCDBQFOYJQMOBX-UHFFFAOYSA-N CC(O)(C1CC2CCC1C2)C(F)(F)F.CC(O)(CC1CC2CCC1C2)C(F)(F)F.CCC.CCC.CCC.CCC(C)C1=CC=C(O)C=C1.CCCC(C(=O)O)C(F)(F)F.CCCC(C)(O)C(F)(F)F.CCCC(C)C(=O)O.CCCC(C)O.CCCC1=CC=C(CC(C)(C)O)C=C1.CCCC1=CC=C(O)C=C1.CCCCC(=O)O.CCCCC(C)(O)C(F)(F)F.CCCCC1=CC=C(CC(C)(C)O)C=C1.CCCCC1=CC=C(O)C=C1.O=C(O)C1CC2CCC1C2 Chemical compound CC(O)(C1CC2CCC1C2)C(F)(F)F.CC(O)(CC1CC2CCC1C2)C(F)(F)F.CCC.CCC.CCC.CCC(C)C1=CC=C(O)C=C1.CCCC(C(=O)O)C(F)(F)F.CCCC(C)(O)C(F)(F)F.CCCC(C)C(=O)O.CCCC(C)O.CCCC1=CC=C(CC(C)(C)O)C=C1.CCCC1=CC=C(O)C=C1.CCCCC(=O)O.CCCCC(C)(O)C(F)(F)F.CCCCC1=CC=C(CC(C)(C)O)C=C1.CCCCC1=CC=C(O)C=C1.O=C(O)C1CC2CCC1C2 MCDBQFOYJQMOBX-UHFFFAOYSA-N 0.000 description 1
- JOUXPUAZRDCVGY-UHFFFAOYSA-N CC.CC.CC.CC(C)C1=CC=C(O)C=C1.CC(O)(C1CC2CCC1C2)C(F)(F)F.CC(O)(CC1CC2CCC1C2)C(F)(F)F.CCC(C(=O)O)C(F)(F)F.CCC(C)(O)C(F)(F)F.CCC(C)C(=O)O.CCC(O)C(F)(F)F.CCC1=CC=C(CC(C)(O)C(F)(F)F)C=C1.CCC1=CC=C(O)C=C1.CCCC(=O)O.CCCC(C)(O)C(F)(F)F.CCCC1=CC=C(CC(C)(O)C(F)(F)F)C=C1.CCCC1=CC=C(O)C=C1.O=C(O)C1CC2CCC1C2 Chemical compound CC.CC.CC.CC(C)C1=CC=C(O)C=C1.CC(O)(C1CC2CCC1C2)C(F)(F)F.CC(O)(CC1CC2CCC1C2)C(F)(F)F.CCC(C(=O)O)C(F)(F)F.CCC(C)(O)C(F)(F)F.CCC(C)C(=O)O.CCC(O)C(F)(F)F.CCC1=CC=C(CC(C)(O)C(F)(F)F)C=C1.CCC1=CC=C(O)C=C1.CCCC(=O)O.CCCC(C)(O)C(F)(F)F.CCCC1=CC=C(CC(C)(O)C(F)(F)F)C=C1.CCCC1=CC=C(O)C=C1.O=C(O)C1CC2CCC1C2 JOUXPUAZRDCVGY-UHFFFAOYSA-N 0.000 description 1
- TWBUVVYSQBFVGZ-UHFFFAOYSA-N CCCC(=O)OC(C)(C)C Chemical compound CCCC(=O)OC(C)(C)C TWBUVVYSQBFVGZ-UHFFFAOYSA-N 0.000 description 1
- JNAUUSHWCCQZCP-UHFFFAOYSA-N CCCC(C(=O)O)C(F)(F)F.CCCC(C)C(=O)O.CCCCC(=O)O Chemical compound CCCC(C(=O)O)C(F)(F)F.CCCC(C)C(=O)O.CCCCC(=O)O JNAUUSHWCCQZCP-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- XZMCDFZZKTWFGF-UHFFFAOYSA-N Cyanamide Chemical compound NC#N XZMCDFZZKTWFGF-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 238000003547 Friedel-Crafts alkylation reaction Methods 0.000 description 1
- 238000005727 Friedel-Crafts reaction Methods 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 101001003569 Homo sapiens LIM domain only protein 3 Proteins 0.000 description 1
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical class ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 102100026460 LIM domain only protein 3 Human genes 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- 238000010934 O-alkylation reaction Methods 0.000 description 1
- 101710189720 Porphobilinogen deaminase Proteins 0.000 description 1
- 102100034391 Porphobilinogen deaminase Human genes 0.000 description 1
- 101710170827 Porphobilinogen deaminase, chloroplastic Proteins 0.000 description 1
- 101710100896 Probable porphobilinogen deaminase Proteins 0.000 description 1
- 229910003811 SiGeC Inorganic materials 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical class C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 1
- AKCXOKXVIWTINO-UHFFFAOYSA-N [2-hydroxy-3-(3-triethoxysilylpropylamino)propyl] 2-methylprop-2-enoate Chemical compound CCO[Si](OCC)(OCC)CCCNCC(O)COC(=O)C(C)=C AKCXOKXVIWTINO-UHFFFAOYSA-N 0.000 description 1
- PVLBXNICXUCXTA-UHFFFAOYSA-N [2-hydroxy-3-(3-triethoxysilylpropylamino)propyl] prop-2-enoate Chemical compound CCO[Si](OCC)(OCC)CCCNCC(O)COC(=O)C=C PVLBXNICXUCXTA-UHFFFAOYSA-N 0.000 description 1
- VZPPHXVFMVZRTE-UHFFFAOYSA-N [Kr]F Chemical compound [Kr]F VZPPHXVFMVZRTE-UHFFFAOYSA-N 0.000 description 1
- RKFUZDIZLQCJKA-UHFFFAOYSA-N [dimethyl(phenyl)silyl]methyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC[Si](C)(C)C1=CC=CC=C1 RKFUZDIZLQCJKA-UHFFFAOYSA-N 0.000 description 1
- YIIAFYZYURUBMN-UHFFFAOYSA-N [dimethyl(propyl)silyl]oxy-dimethyl-propylsilane Chemical compound CCC[Si](C)(C)O[Si](C)(C)CCC YIIAFYZYURUBMN-UHFFFAOYSA-N 0.000 description 1
- DNQFCBLYUTWWCH-UHFFFAOYSA-N [ethoxy(dimethyl)silyl]methyl 2-methylprop-2-enoate Chemical compound CCO[Si](C)(C)COC(=O)C(C)=C DNQFCBLYUTWWCH-UHFFFAOYSA-N 0.000 description 1
- YPMNWQTVWVHXIQ-UHFFFAOYSA-N [methyl-bis(trimethylsilyloxy)silyl]methyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC[Si](C)(O[Si](C)(C)C)O[Si](C)(C)C YPMNWQTVWVHXIQ-UHFFFAOYSA-N 0.000 description 1
- 125000003668 acetyloxy group Chemical group [H]C([H])([H])C(=O)O[*] 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 239000002318 adhesion promoter Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000001476 alcoholic effect Effects 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 150000001345 alkine derivatives Chemical class 0.000 description 1
- 125000005907 alkyl ester group Chemical group 0.000 description 1
- 150000001343 alkyl silanes Chemical class 0.000 description 1
- 238000005804 alkylation reaction Methods 0.000 description 1
- 125000000304 alkynyl group Chemical group 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 229920003180 amino resin Polymers 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- JCJNNHDZTLRSGN-UHFFFAOYSA-N anthracen-9-ylmethanol Chemical compound C1=CC=C2C(CO)=C(C=CC=C3)C3=CC2=C1 JCJNNHDZTLRSGN-UHFFFAOYSA-N 0.000 description 1
- 150000008425 anthrones Chemical class 0.000 description 1
- ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical compound F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- CREXVNNSNOKDHW-UHFFFAOYSA-N azaniumylideneazanide Chemical class N[N] CREXVNNSNOKDHW-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- 150000008366 benzophenones Chemical class 0.000 description 1
- FVVCFHXLWDDRHG-UHFFFAOYSA-N beta-D-Fructofuranosyl alpha-D-glucopyranosyl-(1->4)-D-glucopyranoside Chemical compound OC1C(O)C(CO)OC1(CO)OC1C(O)C(O)C(OC2C(C(O)C(O)C(CO)O2)O)C(CO)O1 FVVCFHXLWDDRHG-UHFFFAOYSA-N 0.000 description 1
- 229940106691 bisphenol a Drugs 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- RMCOJEZDSRZFOF-UHFFFAOYSA-N but-1-enyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=CCC RMCOJEZDSRZFOF-UHFFFAOYSA-N 0.000 description 1
- QZGSLTWDWCYCME-UHFFFAOYSA-N but-3-enyl(trimethyl)silane Chemical compound C[Si](C)(C)CCC=C QZGSLTWDWCYCME-UHFFFAOYSA-N 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical group 0.000 description 1
- 150000001733 carboxylic acid esters Chemical class 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001846 chrysenes Chemical class 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 150000001925 cycloalkenes Chemical class 0.000 description 1
- 125000000000 cycloalkoxy group Chemical group 0.000 description 1
- HPXRVTGHNJAIIH-PTQBSOBMSA-N cyclohexanol Chemical group O[13CH]1CCCCC1 HPXRVTGHNJAIIH-PTQBSOBMSA-N 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 125000005520 diaryliodonium group Chemical group 0.000 description 1
- 239000012954 diazonium Substances 0.000 description 1
- MHDVGSVTJDSBDK-UHFFFAOYSA-N dibenzyl ether Chemical compound C=1C=CC=CC=1COCC1=CC=CC=C1 MHDVGSVTJDSBDK-UHFFFAOYSA-N 0.000 description 1
- FJWRGPWPIXAPBJ-UHFFFAOYSA-N diethyl(dimethyl)silane Chemical compound CC[Si](C)(C)CC FJWRGPWPIXAPBJ-UHFFFAOYSA-N 0.000 description 1
- UCXUKTLCVSGCNR-UHFFFAOYSA-N diethylsilane Chemical compound CC[SiH2]CC UCXUKTLCVSGCNR-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 description 1
- JZZIHCLFHIXETF-UHFFFAOYSA-N dimethylsilicon Chemical compound C[Si]C JZZIHCLFHIXETF-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 150000002118 epoxides Chemical class 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- KJISMKWTHPWHFV-UHFFFAOYSA-N ethyl(dimethyl)silicon Chemical compound CC[Si](C)C KJISMKWTHPWHFV-UHFFFAOYSA-N 0.000 description 1
- DRTMJRUYUMAHMS-UHFFFAOYSA-N ethyl(methyl)silicon Chemical compound CC[Si]C DRTMJRUYUMAHMS-UHFFFAOYSA-N 0.000 description 1
- UKAJDOBPPOAZSS-UHFFFAOYSA-N ethyl(trimethyl)silane Chemical compound CC[Si](C)(C)C UKAJDOBPPOAZSS-UHFFFAOYSA-N 0.000 description 1
- XODWWDLLPURTOQ-UHFFFAOYSA-N ethyl-[ethyl(dimethyl)silyl]oxy-dimethylsilane Chemical compound CC[Si](C)(C)O[Si](C)(C)CC XODWWDLLPURTOQ-UHFFFAOYSA-N 0.000 description 1
- KCWYOFZQRFCIIE-UHFFFAOYSA-N ethylsilane Chemical compound CC[SiH3] KCWYOFZQRFCIIE-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- WJLUBOLDZCQZEV-UHFFFAOYSA-M hexadecyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CCCCCCCCCCCCCCCC[N+](C)(C)C WJLUBOLDZCQZEV-UHFFFAOYSA-M 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000006459 hydrosilylation reaction Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000002164 ion-beam lithography Methods 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 239000012705 liquid precursor Substances 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000007974 melamines Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- FQPSGWSUVKBHSU-UHFFFAOYSA-N methacrylamide Chemical compound CC(=C)C(N)=O FQPSGWSUVKBHSU-UHFFFAOYSA-N 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 125000002868 norbornyl group Chemical group C12(CCC(CC1)C2)* 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- IWQPFENGXVKSDO-UHFFFAOYSA-N phenol;2h-thiazine Chemical compound N1SC=CC=C1.OC1=CC=CC=C1 IWQPFENGXVKSDO-UHFFFAOYSA-N 0.000 description 1
- 235000011007 phosphoric acid Nutrition 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000002574 poison Substances 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 125000003367 polycyclic group Chemical group 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- NHARPDSAXCBDDR-UHFFFAOYSA-N propyl 2-methylprop-2-enoate Chemical compound CCCOC(=O)C(C)=C NHARPDSAXCBDDR-UHFFFAOYSA-N 0.000 description 1
- 229960004063 propylene glycol Drugs 0.000 description 1
- 235000013772 propylene glycol Nutrition 0.000 description 1
- 150000003220 pyrenes Chemical class 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000000263 scanning probe lithography Methods 0.000 description 1
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000006884 silylation reaction Methods 0.000 description 1
- HVXTXDKAKJVHLF-UHFFFAOYSA-N silylmethylsilane Chemical compound [SiH3]C[SiH3] HVXTXDKAKJVHLF-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 150000003459 sulfonic acid esters Chemical class 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- CXVGEDCSTKKODG-UHFFFAOYSA-N sulisobenzone Chemical compound C1=C(S(O)(=O)=O)C(OC)=CC(O)=C1C(=O)C1=CC=CC=C1 CXVGEDCSTKKODG-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- WMOVHXAZOJBABW-UHFFFAOYSA-N tert-butyl acetate Chemical group CC(=O)OC(C)(C)C WMOVHXAZOJBABW-UHFFFAOYSA-N 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- QVPBMCKCBQURHP-UHFFFAOYSA-N tert-butyl-(4-ethenylphenoxy)-dimethylsilane Chemical compound CC(C)(C)[Si](C)(C)OC1=CC=C(C=C)C=C1 QVPBMCKCBQURHP-UHFFFAOYSA-N 0.000 description 1
- 150000008027 tertiary esters Chemical group 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 description 1
- QQXSEZVCKAEYQJ-UHFFFAOYSA-N tetraethylgermanium Chemical compound CC[Ge](CC)(CC)CC QQXSEZVCKAEYQJ-UHFFFAOYSA-N 0.000 description 1
- VCZQFJFZMMALHB-UHFFFAOYSA-N tetraethylsilane Chemical compound CC[Si](CC)(CC)CC VCZQFJFZMMALHB-UHFFFAOYSA-N 0.000 description 1
- 125000003718 tetrahydrofuranyl group Chemical group 0.000 description 1
- 125000001412 tetrahydropyranyl group Chemical group 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- UZIAQVMNAXPCJQ-UHFFFAOYSA-N triethoxysilylmethyl 2-methylprop-2-enoate Chemical compound CCO[Si](OCC)(OCC)COC(=O)C(C)=C UZIAQVMNAXPCJQ-UHFFFAOYSA-N 0.000 description 1
- JCSVHJQZTMYYFL-UHFFFAOYSA-N triethyl(methyl)silane Chemical compound CC[Si](C)(CC)CC JCSVHJQZTMYYFL-UHFFFAOYSA-N 0.000 description 1
- UOKUUKOEIMCYAI-UHFFFAOYSA-N trimethoxysilylmethyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)COC(=O)C(C)=C UOKUUKOEIMCYAI-UHFFFAOYSA-N 0.000 description 1
- SGLFWYWGTJDPPC-UHFFFAOYSA-N trimethyl(pentyl)silane Chemical compound CCCCC[Si](C)(C)C SGLFWYWGTJDPPC-UHFFFAOYSA-N 0.000 description 1
- AEOGRWUNSVGMMJ-UHFFFAOYSA-N trimethylgermane Chemical compound C[GeH](C)C AEOGRWUNSVGMMJ-UHFFFAOYSA-N 0.000 description 1
- PGQNYIRJCLTTOJ-UHFFFAOYSA-N trimethylsilyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)O[Si](C)(C)C PGQNYIRJCLTTOJ-UHFFFAOYSA-N 0.000 description 1
- NYHMLROEJNBVEF-UHFFFAOYSA-N tris(trimethylsilyloxy)silylmethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC[Si](O[Si](C)(C)C)(O[Si](C)(C)C)O[Si](C)(C)C NYHMLROEJNBVEF-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0276—Photolithographic processes using an anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0338—Process specially adapted to improve the resolution of the mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
Definitions
- the present invention relates to semiconductor device processing, and more particular to methods for multiple patterning of a semiconductor structure using improved patternable low dielectric constant (low-k) materials as both a photoresist material and as a permanent low-k material of the semiconductor structure. Even more particularly, the present invention provides methods to pattern very small permanent dielectric features that are not possible with a conventional single exposure lithographic process.
- low-k low dielectric constant
- the integration of many semiconductor devices onto a small area includes downscaling the semiconductor devices to be formed on the semiconductor wafer. Moreover, as the integration density of semiconductor devices increases, the line width and spacing of circuit elements in the semiconductor devices must decrease accordingly.
- Electronic features of a semiconductor device are formed using patterns created by a photolithography process or processes. Patterns used to form circuit elements with spacing and/or line widths less than a predetermined minimum amount are referred to as “fine pitch” patterns.
- One of the main factors that determine the minimum pitch of patterns that can be formed by a photolithography process is the type of light source used in the photolithography process.
- conventional photolithography processes commonly use light sources such as krypton fluoride (KrF) or argon fluoride (ArF) lasers, which have respective wavelengths of 248 nm or 193 nm.
- KrF krypton fluoride
- ArF argon fluoride
- Double patterning or more generally, multiple patterning is a class of technologies developed for photolithography to enhance the feature density.
- double patterning may be used as early as the 45 nm node and may be the primary technique for the 32 nm node and beyond.
- a first photoresist is first applied to a structure including, from top to bottom, a hard mask, an underlayer and a substrate. After applying the first photoresist to the structure, a first pattern is provided utilizing a conventional lithography step. Following patterning of the first photoresist, the first pattern is transferred to the hard mask utilizing a first etching step that stops on a surface of the underlayer. A second photoresist is then applied to the patterned structure and is exposed to a second patterning step.
- LELE litho-etch-litho-etch
- the second patterning step provides a second pattern into the second photoresist that lies between the first pattern provided in the first patterning and etching step.
- the second pattern formed in the second photoresist is transferred to the structure utilizing a second etching step.
- the second etching step removes exposed portions of the hard mask, while also stopping on the surface of the underlayer.
- the patterned second photoresist is removed and thereafter the first and second patterns provided in the hard mask are transferred to the underlayer utilizing a third etching step.
- a less complex double patterning method involves direct patterning of two photoresists consecutively. This process is sometime call litho-litho-etch (LLE) double patterning.
- LLE litho-litho-etch
- a first photoresist is first applied to a structure including, from top to bottom, an antireflective coating and a substrate. After applying the first photoresist to the structure, a first pattern is formed utilizing a conventional lithography step. Following patterning of the first photoresist, a second photoresist is applied directly onto the first patterned photoresist and is subjected to a second patterning step.
- the second patterning step provides a second pattern into the second photoresist that lies between the first patterned photoresist provided in the first patterning step, thus providing fine pitch (double the resolution) pattern.
- This fine pitch photoresist pattern is thereafter transferred to the underlying substrate utilizing an etching step.
- One of the major problems with this litho-litho-etch double patterning process is the incompatibility of conventional resists. That is, during the double patterning process, the first photoresist dissolves during the formation of the second photoresist, causing deformation of the first pattern.
- the present invention provides a method of multiple patterning a semiconductor structure with a photo-patternable low dielectric constant (low-k) material which after patterning becomes a permanent part of the semiconductor structure. More specifically, the method of the present invention forms a patterned semiconductor structure with small features, which are difficult to obtain using conventional single exposure lithographic processes.
- the method of the present invention includes the use of patternable low-k materials, which after patterning remain as permanent dielectric materials within the semiconductor structure.
- the method of the present invention is useful in forming semiconductor interconnect structures in which the patternable low-k materials after patterning and curing become permanent elements, e.g., patterned interlayer low-k materials, of the interconnect structure. The invention accomplishes this without the need of utilizing separate photoresists.
- a method of forming a double patterned semiconductor structure generally includes forming a first patternable low-k material above a surface of a material stack.
- the first patternable low-k material is then patterned to provide a first structure having a first patterned low-k material above the surface of the material stack.
- a second patternable low-k material is formed over the first structure.
- the second patternable low-k material is then patterned to provide a second structure including a second patterned low-k material adjacent to, but not abutting the first patterned low-k dielectric material.
- the first and the second patterned low-k materials are cured to form a permanent element of a semiconductor chip.
- the patterns provided by the first and second patterned low-k materials can be optionally transferred into the material stack.
- the material stack includes at least an inorganic antireflective coating and optionally a dielectric cap.
- the antireflective coating typically undergoes a post deposition treatment selected from heat treatment, irradiation of electromagnetic wave (such of ultra-violet light), particle beam (such as an electron beam, or an ion beam), plasma treatment, chemical treatment through a gas phase or a liquid phase (such as application of a monolayer of surface modifier) or any combination thereof.
- the inorganic antireflective coating is formed by vapor deposition and includes elements of M, C and H, wherein M is at least one of the elements of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and, optionally, one of the elements of O, N, S and F.
- the inorganic antireflective coating is formed by liquid deposition and comprises a polymer that has at least one monomer unit having the formula M-R A , wherein M is at least one of the elements of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and, optionally, one of the elements of O, N, S and F, and R A is a chromophore.
- the polymer of the liquid deposited antireflective coating further includes another monomer unit having the formula M′-R B , wherein M′ is at least one of the elements of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and, optionally, one of the elements of O, N, S and F, and R B is a cross-linking agent.
- M′ is at least one of the elements of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and, optionally, one of the elements of O, N, S and F, and R B is a cross-linking agent.
- at least one of M and M′ is further bonded to an organic ligand of elements of C and H, a cross-linking component, a chromophore or mixtures thereof.
- the first and second patternable low-k materials mentioned above are the same or different dielectric materials and are positive or negative-tone irradiation/acid sensitive materials comprising a polymer, a copolymer, a blend including at least two of any combination of polymers and/or copolymers.
- the polymers include one monomer and the copolymers include at least two monomers and the monomers of the polymers and the momoners of the copolymers are selected from a siloxane, silane, carbosilane, oxycarbosilane, silsesquioxane, alkyltrialkoxysilane, tetra-alkoxysilane, unsaturated alkyl substituted silsesquioxane, unsaturated alkyl substituted siloxane, unsaturated alkyl substituted silane, an unsaturated alkyl substituted carbosilane, unsaturated alkyl substituted oxycarbosilane, carbosilane substituted silsesquioxane, carbosilane substituted siloxane, carbosilane substituted silane, carbosilane substituted carbosilane, carbosilane substituted oxycarbosilane, oxycarbosilane substituted silsesquiox
- At least one of the first and/or second patternable low-k materials further comprises a functionalized sacrificial pore generator which can be removed during subsequent processes forming a porous low-k material.
- a curing step is performed that cures at least the second patterned low-k material. In some instances, this curing step also cures the first patterned low-k material. In yet another embodiment, the first patterned low-k material is cured prior to forming the second patternable low-k dielectric. Notwithstanding which of these embodiments is performed, curing comprises a thermal cure, an electron beam cure, a UV cure, an ion beam cure, a plasma cure, a microwave cure or any combination thereof.
- small features that are permanent part of a semiconductor device are formed wherein the small features are formed by repeating the second patterning step mentioned above at least one more time.
- a method of forming a double patterned semiconductor structure includes forming a first patternable low-k material on a surface of an inorganic antireflective coating.
- the first patternable low-k material is then patterned and cured to provide a first structure having a first patterned and cured low-k material on the surface of the inorganic antireflective coating.
- a second patternable low-k material is formed over the first structure and then the second patternable low-k material is patterned to provide a second structure including a second patterned low-k material adjacent to, but not abutting the first patterned and cured low-k material.
- the second patterned low-k material is cured.
- the patterns provided by the first and second patterned and cured low-k materials are transferred into the inorganic antireflective coating.
- a double patterned semiconductor structure comprises a first patterned and cured low-k material located on a portion of an antireflective coating; and a second patterned and cured low-k material located on another portion of the antireflective coating, wherein the second patterned and cured low-k dielectric material is adjacent to, but not abutting the first patterned and cured low-k material, wherein the inorganic antireflective coating is (i) a material having elements of M, C and H, wherein M is at least one of the elements of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La, or (ii) a polymer that has at least one monomer unit having the formula M-R A , wherein M is at least one of the elements of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La, and R A is a chromophore.
- the inorganic antireflective coating is a polymer which further includes another monomer unit having the formula M′-R B , wherein M′ is at least one of the elements of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and, optionally, one of the elements of O, N, S and F, and R B is a cross-linking agent.
- M′ is at least one of the elements of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and, optionally, one of the elements of O, N, S and F, and R B is a cross-linking agent.
- at least one of M and M′ is further bonded to an organic ligand of C and H, a cross-linking component, a chromophore or mixtures thereof.
- the first and second cured and patternable low-k materials mentioned above are the same or different dielectric materials and are positive- or negative-tone irradiation/acid sensitive materials comprising a polymer, a copolymer, a blend including at least two of any combination of polymers and/or copolymers, wherein said polymers include one monomer and said copolymers include at least two monomers and wherein the monomers of the polymers and the momoners of the copolymers are selected from a siloxane, silane, carbosilane, oxycarbosilane, silsesquioxane, alkyltrialkoxysilane, tetra-alkoxysilane, unsaturated alkyl substituted silsesquioxane, unsaturated alkyl substituted siloxane, unsaturated alkyl substituted silane, an unsaturated alkyl substituted carbosilane, unsaturated alkyl substituted oxycarbosilane, carbos
- At least one of the first and second cured and patterned low-k materials is porous.
- the first and second cured and patterned low-k materials have a dielectric constant of not more than 4.3.
- first and second cured and patterned low-k materials are separated by a distance of roughly half of the distance of similar features formed by a single exposure patterning.
- the present invention offers several advantages: it provides a simplified method to achieve high-resolution patterns for semiconductor devices; it also offers a cost-effective way to generate fine patterned dielectric structures that are permanent parts of a semiconductor chip.
- the anti-reflective-coating and the patternable low-k material are part of a permanent dielectric material stack of the interconnect structure.
- the present invention also relates to interconnect structures which include the patternable low-k material in a cured state; in the cured state the patternable low-k material serves as the permanent interconnect dielectric in which a conductive material is embedded therein.
- FIGS. 1A-1H are pictorial representations (through cross sectional views) depicting basic processing steps that are employed in the present invention to provide a multiple patterned structure on a semiconductor chip.
- the patternable low-k materials employed in the invention are any dielectric materials possessing two functions. They act as a photoresist during a patterning process and are subsequently converted into a low-k dielectric insulator during a post patterning cure process.
- the cured product of a patternable low-k material therefore, can serve as an on-chip dielectric insulator.
- the patternable low-k material can be deposited from a liquid phase.
- the terms “cure” or “curing” are used interchangeable to refer one of the processes selected from a thermal cure, an electron beam cure, an ultra-violet (UV) cure, an ion beam cure, a plasma cure, a microwave cure or a combination thereof.
- a “cured” product of a patternable low-k material is the product of the patternable low-k material after it has undergone one of the aforementioned cure processes.
- the “cured” product of a patternable low-k material is different from the patternable low-k material in chemical nature and physical, mechanical and electrical properties.
- FIGS. 1A-1H illustrate a preferred embodiment of the present invention in which a double patterned permanent dielectric structure on a semiconductor chip is formed.
- FIG. 1A illustrates an initial structure 10 that is utilized in this embodiment.
- the initial structure 10 includes a substrate 12 , an optional dielectric cap 14 located on a surface of substrate 12 , and an inorganic antireflective coating 16 located on a surface of the optional dielectric cap 14 . If the optional dielectric cap 14 is not present the inorganic antireflective coating 16 is located directly on a surface of substrate 12 .
- the substrate 12 may comprise a semiconducting material, an insulating material, a conductive material, devices or structures made of these materials or any combination thereof (e.g., a lower level of an interconnect structure).
- a semiconducting material any semiconductor such as Si, SiGe, SiGeC, SiC, Ge alloys, GaAs, InAs, InP and other III/V or II/VI compound semiconductors, or organic semiconductors may be used.
- the present invention also contemplates cases in which the semiconductor substrate is a layered semiconductor such as, for example, Si/SiGe, Si/SiC, silicon-on-insulators (SOIs) or silicon germanium-on-insulators (SGOIs).
- SOIs silicon-on-insulators
- SGOIs silicon germanium-on-insulators
- the insulating material can be an organic insulator, an inorganic insulator or a combination thereof including multilayers.
- the substrate 12 may also include a patternable low-k material as well. These electrically insulating materials may be part of a device, or devices or structures. These devices or structures may be discrete or interconnected. These devices and structures may be for logic applications or memory applications.
- the substrate 12 is an electrically conducting material, the substrate may include, for example, polySi, an elemental metal, an alloy including at least one elemental metal, a metal silicide, a metal nitride or a combination thereof including multilayers.
- CMOS complementary metal oxide semiconductor
- strained silicon devices carbon-based (carbon nanotubes and/or graphene) devices
- magnetic spin devices single electron transistors
- quantum devices molecule-based switches and other switching devices that can be part of an integrated circuit
- the optional dielectric cap 14 is formed directly on the surface of substrate 12 utilizing a conventional deposition process such as, for example, chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), chemical solution deposition, or evaporation.
- the dielectric cap 14 comprises any suitable dielectric capping material such as, for example, SiC, SiN, SiO 2 , a carbon doped oxide, a nitrogen and hydrogen doped silicon carbide SiC(N,H) or multilayers thereof.
- the dielectric cap 14 can be a continuous layer or a discontinuous layer.
- the dielectric cap 14 can be a layer with graded composition in the vertical direction. It can also be a select cap, such as CoWP.
- a post deposition treatment may be applied to the dielectric cap 14 to modify the properties of either the entire layer or the surface of the dielectric cap layer.
- This post deposition treatment can be selected from heat treatment, irradiation of electromagnetic wave (such of ultra-violet light), particle beam (such as an electron beam, or an ion beam), plasma treatment, chemical treatment through a gas phase or a liquid phase (such as application of a monolayer of surface modifier) or any combination thereof.
- This post-deposition treatment can be blanket or pattern-wise.
- the purpose of the post deposition treatment is to enhance the chemical, physical, electrical, and/or mechanical properties of the dielectric cap, such as adhesion strength.
- the chemical properties include nature and/or location of surface functional groups, and hydrophilicity.
- the physical properties include density, moisture absorption, and heat conductivity.
- the mechanical properties include modulus, hardness, cohesive strength, toughness, resistance to crack and adhesion strength to its neighboring layers.
- the electrical properties include dielectric constant, electrical breakdown field, and
- the heat treatment should be no high than the temperature that the underlying substrate can withstand, usually 500° C.
- This heat treatment can be conducted in an inert environment or within a chemical environment in a gas phase or a liquid phase. This treatment step may or may not be performed in the same tool as that used in forming the dielectric cap 14 .
- the post deposition treatment by irradiation of electromagnetic wave can be by ultra-violet (UV) light, microwave and the like.
- the UV light can be broadband with a wavelength range from 100 nm to 1000 nm. It can also be UV light generated by an excimer laser or other UV light source.
- the UV treatment dose can be a few mJ/cm 2 to thousands of J/cm 2 .
- This irradiation treatment can be conducted at ambient temperature or at an elevated temperature no higher than 500° C.
- This irradiation treatment can be conducted in an inert environment or within a chemical environment in a gas phase or a liquid phase.
- a radiation time from 10 sec to 30 min
- a temperature from room temperature to 500° C.
- an environment including vacuum, or gases such as, for example, inert gas, N 2 , H 2 , O 2 , NH 3 , hydrocarbon, and SiH 4 .
- This treatment step may or may not be performed in the same tool as that used in forming the dielectric cap 14 .
- the post deposition treatment by plasma treatment can be selected from oxidizing plasma, reducing plasma or a neutral plasma.
- Oxidizing plasmas include, for example, O 2 , CO, and CO 2 .
- Reducing plasmas include, for example, H 2 , N 2 , NH 3 , and SiH 4 .
- the neutral plasmas include, for example, Ar and He.
- a plasma treatment time from 1 sec to 10 min and a plasma treatment temperature from room temperature to 400° C. can be employed. This treatment step may or may not be performed in the same tool as that used in forming the dielectric cap 14 .
- the post deposition chemical treatment may be conducted in a gas phase or a liquid phase.
- the following conditions may be employed for this aspect of the present invention: a treatment time from 1 sec to 30 min, a temperature from room temperature (i.e., from 20° C. to 30° C.) to 500° C.
- Chemicals suitable for this chemical treatment may be selected from any chemicals that improve chemical, physical, electrical, and/or mechanical properties of the dielectric cap layer, such as adhesion strength. This chemical treatment may penetrate the entire dielectric cap 14 or is limited only to the surface of the dielectric cap 14 .
- Example chemicals include adhesion promoters such as silanes, siloxanes and silylation agents. This treatment step may or may not be performed in the same tool as that used in forming the dielectric cap 14 .
- the thickness of the dielectric cap 14 may vary depending on the technique used to form the same as well as the material make-up of the layer. Typically, the dielectric cap 14 has a thickness from 5 nm to 55 nm, with a thickness from 20 nm to 45 nm being more typical.
- An inorganic antireflective coating (ARC) 16 is formed on a surface of the optional dielectric cap 14 if present, or directly on a surface of the substrate 12 when the dielectric cap 14 is not present.
- the ARC 16 employed has all of the following general characteristics: (i) It acts as an ARC during a lithographic patterning process; (ii) It withstands high-temperature BEOL integration processing (up to 500° C.); (iii) It prevents resist (e.g., the patternable low-k material) poisoning by the substrate; (iv) It provides vertical wall profile and sufficient etch selectivity between the patternable low-k material and the ARC layer; (v) It serves as a permanent dielectric layer in a chip (low dielectric constant, preferably k ⁇ 5, more preferably k ⁇ 3.6); and (vi) It is compatible with conventional BEOL integration and produces reliable hardware. Further discussion is now provided for characteristics (i)-(v).
- Characteristic (i), i.e., ARC 16 acts as an antireflective coating (ARC) during a lithographic patterning process:
- the ARC may be designed to control reflection of light that is transmitted through the patternable low-k material (to be subsequently formed), reflected off the substrate and back into the patternable low-k material, where it can interfere with incoming light and cause the patternable low-k material to be unevenly exposed (along the vertical direction).
- the optical constant of the ARC is defined here as the index of refraction n and the extinction coefficient k.
- ARC 16 can be modeled so as to find optimum optical parameters (n and k values) of the ARC as well as optimum thickness.
- the optical properties and thickness of ARC 16 are optimized to obtain optimal resolution and profile control of the patternable low-k material during the subsequent patterning steps, which is well known to those ordinarily skilled in the art.
- Characteristic (ii), i.e., ARC 16 can withstand high-temperature BEOL integration processing (up to 500° C.): ARC 16 must withstand the harsh processing conditions during BEOL integration. This includes high temperature and intense UV curing. The process temperature can be as high as 450° C. The intensity of the light used in the UV cure process can be as high as tens of J/cm 2 .
- Characteristic (iii), i.e., ARC 16 prevents resist (e.g., patternable low-k material) poisoning by the substrate:
- the patternable low-k materials employed are preferably chemically amplified resists. They can be poisoned by any basic contaminant from the underlying substrate, such as a SiCN dielectric cap. As such, ARC 16 must serve as a barrier layer to prevent basic contaminant from the underlying substrate from diffusing into the patternable low-k material to poison the chemically amplified patternable low-k material.
- Characteristic (iv), i.e., ARC 16 provides vertical wall profile and sufficient etch selectivity between the patternable low-k material and the ARC layer: ARC 16 should provide sufficient reflectivity control with reflectivity from the underlying substrate under a particular lithographic wavelength of less than 8%, preferably less than 5%, more preferably less than 2% and generate vertical side wafer profile. ARC 16 should also generate residue-free patterns with no footing. Moreover, the adhesion of the patternable low-k material should be sufficient to prevent pattern collapse during patterning and a subsequent UV cure.
- ARC 16 should also be designed such that the etch selectivity during ARC/cap open process is sufficiently high so that the opening of the ARC/cap stack does not erode significant portion of the patternable low-k material and degrade significantly its pattern profile.
- An etch selectivity (etch rate ratio of ARC/cap versus patternable low-k material) is greater than 1, preferably greater than 3, more preferable greater than 5.
- electrical properties low dielectric constant: k less than 5, and preferably k less than 3.6; dielectric
- the thickness of the ARC 16 may vary depending on the technique used to form the same as well as the material make-up of the layer. If the dielectric constant of the ARC 16 is greater than that of the cured patternable low-k material, it is preferred that the ARC 16 is the thinnest one that satisfies all the requirements. Typically, the ARC 16 has a thickness from 5 nm to 200 nm, with a thickness from 20 nm to 140 nm being more typical.
- the antireflective coating 16 may be inorganic or a hybrid of inorganic and organic.
- Inorganic antireflective coatings such as silicon oxynitride (SiON), silicon carbide (SiC), silicon oxycarbide (SiOC), SiCOH, siloxane, silane, carbosilane, oxycarbosilane, and silsesquioxane, either as a polymer or a copolymer may be employed as ARC 16 and may be deposited, for example, by plasma-enhanced chemical vapor deposition, spin-on techniques, spray coating, dip coating, etc.
- ARC 16 may be a single layer or multilayer. When ARC 16 is a multilayer ARC, the deposition of each layer may be the same or a combination of deposition methods can be used.
- the chemical composition of ARC 16 may be uniform or graded along the vertical direction.
- a post deposition baking step is usually required to remove unwanted components, such as solvent, and to effect crosslinking.
- the post deposition baking step of ARC 16 is typically, but not necessarily always, performed at a temperature from 80° C. to 300° C., with a baking temperature from 120° C. to 200° C. being even more typical.
- the as-deposited ARC 16 may be subjected to a post deposition treatment to improve the properties of the entire layer or the surface of the ARC 16 .
- This post deposition treatment can be selected from heat treatment, irradiation of electromagnetic wave (such as ultra-violet light), particle beam (such as an electron beam, or an ion beam), plasma treatment, chemical treatment through a gas phase or a liquid phase (such as application of a monolayer of surface modifier) or any combination thereof.
- This post-deposition treatment can be blanket or pattern-wise. The purpose of this post deposition treatment is to enhance the chemical, physical, electrical, and/or mechanical properties of the ARC 16 and/or the film stack, such as adhesion strength.
- the chemical properties include nature and/or location of surface functional groups, and hydrophilicity.
- the physical properties include density, moisture absorption, and heat conductivity.
- the mechanical properties include modulus, hardness, cohesive strength, toughness, resistance to crack and adhesion strength to its neighboring layers.
- the electrical properties include dielectric constant, electrical breakdown field, and leakage current.
- ARC 16 The conditions of the post treatments used here for ARC 16 are the same as those described above for the optional dielectric cap 14 .
- the ARC 16 that is employed is an inorganic composition that includes elements of M, C (carbon) and H (hydrogen), wherein M is selected from at least one of the elements of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La.
- M is selected from at least one of the elements of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La.
- This inorganic ARC may optionally include elements of O, N, S, F or mixtures thereof.
- M is preferably Si.
- the ARC composition may also be referred to as a vapor deposited M:C:H: optionally X material, wherein M is as defined above, and X is at least one element of O, N, S and F.
- ARC 16 is produced by a vapor or liquid phase deposition (such as, for example, CVD, PECVD, PVD, ALD and spin-on coating) method using appropriate Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La precursors by adjusting process parameters and/or precursor composition.
- a vapor or liquid phase deposition such as, for example, CVD, PECVD, PVD, ALD and spin-on coating
- ARC 16 is a Si:C:H:X film.
- These Si containing films are deposited from at least one Si containing precursor. More particularly, the Si:C:H:X films are deposited from at least one Si containing precursor with, or without, additions of nitrogen and/or oxygen and/or fluorine and/or sulfur containing precursors.
- the Si containing precursor that is employed can comprise any Si containing compound including molecules selected from silane (SiH 4 ) derivatives having the molecular formulas SiR 4 , cyclic Si containing compounds including cyclocarbosilane where the R substitutents may or may not be identical and are selected from H, alkyl, phenyl, vinyl, allyl, alkenyl or alkynyl groups that may be linear, branched, cyclic, polycyclic and may be functionalized with nitrogen containing substituents, any cyclic Si containing compounds including cyclosilanes, and cyclocarbosilanes.
- silane (SiH 4 ) derivatives having the molecular formulas SiR 4 cyclic Si containing compounds including cyclocarbosilane where the R substitutents may or may not be identical and are selected from H, alkyl, phenyl, vinyl, allyl, alkenyl or alkynyl groups that may be linear, branche
- Preferred Si precursors include, but are not limited to silane, methylsilane, dimethylsilane, trimethylsilane, tetramethylsilane, ethylsilane, diethylsilane, triethylsilane, tetraethylsilane, ethylmethylsilane, triethylmethylsilane, ethyldimethylsilane, ethyltrimethylsilane, diethyldimethylsilane, 1,1,3,3,-tetrahydrido-1,3-disilacyclobutane; 1,3-disilacyclobutane; 1,3-dimethyl-1,3-dihydrido-1,3-disilylcyclobutane; 1,1,3,3,tetramethyl-1,3-disilacyclobutane; 1,1,3,3,5,5-hexahydrido-1,3,5-trisilane; 1,1,3,3,5,
- meta substituted isomers such as dimethyl-1-propyl-3-silabutane; 2-silapropane, 1,3-disilacyclobutane, 1,3-disilapropane, 1,5-disilapentane, or 1,4-bis-trihydrosilyl benzene can be employed.
- a single precursor such as silane amine, Si(Net) 4 can be used as the silicon, carbon and nitrogen source.
- Another preferred method is a mixture of precursors, a Si containing source such as silane, disilane, or a alkylsilane such as tetramethylsilane, or trimethylsilane, and a nitrogen containing source such as ammonia, amines, nitriles, aminos, azidos, azos, hydrizos.
- An additional carbon source and/or carbon and nitrogen containing source comprised of a linear, branched, cyclic or polycyclic hydrocarbon backbone of —[CH 2 ] n —, where n is greater than or equal to 1, and may be substituted by functional groups selected from alkenes (—C ⁇ C—), alkynes (—C ⁇ C—), amines (—C—N—), nitriles (—C ⁇ N), amino (—NH 2 ), azido (—N ⁇ N ⁇ N—) and azo (—N ⁇ N—) may also be required.
- the hydrocarbon backbone may be linear, branched, or cyclic and may include a mixture of linear branched and cyclic hydrocarbon moieties. These organic groups are well known and have standard definitions that are also well known in the art. These organic groups can be present in any organic compound.
- the method may further include the step of providing a parallel plate reactor, which has an area of a substrate chuck from 85 cm 2 to 750 cm 2 , and a gap between the substrate and a top electrode from 1 cm to 12 cm.
- a high frequency RF power is applied to one of the electrodes at a frequency from 0.45 MHz to 200 MHz.
- an additional RF power of lower frequency than the first RF power can be applied to one of the electrodes.
- a single source precursor or a mixture of precursors which provide a silicon, carbon and nitrogen source are introduced into a reactor.
- the conditions used for the deposition step may vary depending on the desired final properties of ARC 16 .
- the conditions used for providing the ARC 16 comprising elements of Si:C:H:X include: setting the substrate temperature within a range from 100° C. to 700° C.; setting the high frequency RF power density within a range from 0.1 W/cm 2 to 2.0 W/cm 2 ; setting the gas flow rates within a range from 5 sccm to 10000 sccm, setting the inert carrier gases, such as helium (or/and argon) flow rate within a range from 10 sccm to 10000 sccm; setting the reactor pressure within a range from 1 Torr to 10 Torr; and setting the high frequency RF power within a range from 10 W to 1000 W.
- a lower frequency power may be added to the plasma within a range from 10 W to 600 W.
- the RF power applied to the substrate chuck is also changed by a factor of X.
- Gas flows of silane, carbon and/or nitrogen gas precursors are flowed into the reactor at a flow rate within a range from 10 sccm to 1000 sccm. While gas precursors are used in the above example, liquid precursors may also be used for the deposition.
- any precursor including elements of M, C and H can be used. That is, any precursor including M and at least one organic ligand can be used. Examples include methylsilanes such as trimethylsilane or tetramethylsilane, siloxanes such as tetramethylcyclotetrasiloxane or octylmethylcyclotetrasiloxane, or methyl gemanes such as trimethylgermane or tetraethylgermane.
- Organic precursors may also be used in addition to the organometallic ones as long as the resultant ARC film possesses the desirable attributes described above.
- These organic precursors are selected from hydrocarbons and their derivatives, including linear, branched, and ring type molecules.
- the atomic % ranges for M in such ARC materials are as follows: preferably 0.1 atomic % to 95 atomic %, more preferably 0.5 atomic % to 95 atomic %, most preferably 1 atomic % to 60 atomic % and most highly preferably 5 atomic % to 50 atomic %.
- the atomic % ranges for C in ARC 16 are as follows: preferably 0.1 atomic % to 95 atomic %, more preferably 0.5 atomic % to 95 atomic %, most preferably 1 atomic % to 60 atomic % and most highly preferably 5 atomic % to 50 atomic %.
- the atomic % ranges for H in ARC 16 are as follows: preferably 0.1 atomic % to 50 atomic %, more preferably 0.5 atomic % to 50 atomic %, most preferably 1 atomic % to 40 atomic % and most highly preferably 5 atomic % to 30 atomic %.
- the atomic % ranges for X in ARC 16 are as follows: preferably 0 atomic % to 70 atomic %, more preferably 0.5 atomic % to 70 atomic %, most preferably 1 atomic % to 40 atomic % and most highly preferably 5 atomic % to 30 atomic %.
- the ARC 16 including elements of M, C and H has a tunable index of refraction and extinction coefficient which can be optionally graded along the film thickness to match the optical properties of the substrate and the patternable low-k material.
- the optical properties and the lithographic features of ARC 16 are vastly superior to those obtained by the prior art.
- the ARC 16 including elements of M, C and H can be deposited also in a parallel plate PECVD reactor with the substrate positioned on the grounded electrode. It can be deposited in conditions similar to those described in the previous examples but at substrate temperatures up to 400° C., and in high-density plasma type reactors under suitable chosen conditions. It should be noted that by changing process parameters such as bias voltage, gas mixture, gas flow, pressure and deposition temperature, the film's optical constants can be changed. In addition, the composition of the starting precursor as well as the introduction of oxygen, nitrogen, fluorine, and sulfur containing precursors also allows the tunability of these films.
- the ARC's optical constants are defined here as the index of refraction n and the extinction coefficient k.
- the ARC 16 that is employed is formed by a liquid deposition process including for example, spin-on coating, spray coating, dip coating, brush coating, evaporation or chemical solution deposition.
- This ARC formed by liquid deposition comprises a polymer that has at least one monomer unit comprising the formula M-R A wherein M is at least one of the elements of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and R A is a chromophore.
- M-R A monomer unit comprising the formula M-R A wherein M is at least one of the elements of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and R A is a chromophore.
- M within the monomer unit may also be bonded to organic ligands including elements of C and H, a cross-linking component, another chromophore or mixtures thereof.
- the organic ligands may further include one of the elements of O, N, S and F. When the organic ligand is bonded to M, it is bonded to M′ through C, O, N, S, or F.
- the ARC 16 formed by liquid deposition may also include at least one second monomer unit, in addition to the at least one monomer unit represented by the formula M-R A .
- the at least one second monomer unit has the formula M′-R B , wherein M′ is at least one of the elements of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La, and R B is a cross-linking agent.
- M and M′ may be the same or different elements.
- M and M′ within the monomer unit may be also be bonded to organic ligands including atoms of C and H, a cross-linking component, a chromophore or mixtures thereof.
- the organic ligands may further include one of the elements of O, N, S and F. When the organic ligand is bonded to M and M′, it is bonded to M or M′ through C, O, N, S, or F.
- the liquid ARC composition comprising M-R A or M-R A and M′-R B may also comprise at least one additional component, including a separate crosslinker, an acid generator or a solvent.
- the ARC 16 is formed by liquid phase deposition of a liquid composition that includes an inorganic precursor that includes element of M, C and H, wherein M is at least one of the elements of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La.
- the inorganic precursor used in forming the ARC may optionally include elements of O, N, S, F or mixtures thereof.
- M is preferably Si.
- the liquid composition also includes, in addition to the inorganic precursor, a chromophore, a cross-linking component, an acid generator and solvent.
- One embodiment of the inorganic ARC 16 composition used in the liquid deposition embodiment comprises M-R A and M′-R B units, wherein M and M′ is at least one of the elements of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La or is selected from Group IIIB to Group VIB, Group IIIA, and Group IVA.
- the inorganic precursor used in forming the ARC may optionally include elements of O, N, S, F or mixtures thereof.
- One embodiment of the ARC composition comprises the MO y unit which can be any one of many different metal-oxide forms.
- An exemplary list of such metal-oxide forms for a particular metal is as follows: MO 3 ; wherein M is Sc, Y, lanthanide, and Group IIIA; B, Al, Ga or In; MO 4 ; wherein M is Group IVB; Ti, Zr or Hf, and Group IVA; Sn or Ge; MO 5 ; wherein M is Group VB; V, Nb or Ta; or P.
- the Group VB metals are also known to form stable metal oxo forms, LMO3, wherein L is an oxo; LMO; many of the listed metals form stable acetoacetato-metal complexes; LMO; many of the listed metals form stable cyclopentadienyl-metal complexes; LMO; wherein L is an alkoxy ligand; M is Sc, Y, or lanthanide, Group IVB, and Group VB; or LMO; wherein L is an alkyl or phenyl ligand; M is Group IIIA or Group IVA.
- the chromophore, cross-linking component and acid generator that can be used in the liquid deposited ARC are defined in greater detail with respect to the following preferred embodiment of the present invention.
- the ARC 16 formed by liquid deposition is characterized by the presence of a silicon-containing polymer having units selected from a siloxane, silane, carbosilane, oxycarbosilane, silsesquioxane, alkyltrialkoxysilane, tetra-alkoxysilane, or silicon-containing and pendant chromophore moieties.
- the polymer containing these units may be a polymer containing these units in the polymer backbone and/or in pendant groups.
- the polymer contains the preferred units in its backbone.
- the polymer is preferably a polymer, a copolymer, a blend including at least two of any combination of polymers and/or copolymers, wherein the polymers include one monomer and the copolymers include at least two monomers and wherein the monomers of the polymers and the momoners of the copolymers are selected from a siloxane, silane, carbosilane, oxycarbosilane, silsesquioxane, alkyltrialkoxysilane, tetra-alkoxysilane, unsaturated alkyl substituted silsesquioxane, unsaturated alkyl substituted siloxane, unsaturated alkyl substituted silane, an unsaturated alkyl substituted carbosilane, unsaturated alkyl substituted oxycarbosilane, carbosilane substituted silsesquioxane, carbosilane substituted silox
- the polymer should have solution and film-forming characteristics conducive to forming an ARC by conventional spin-coating.
- the silicon-containing polymer also preferably contains a plurality of reactive sites distributed along the polymer for reaction with the cross-linking component.
- suitable polymers include polymers having the silsesquioxane (ladder, caged, or network) structure. Such polymers preferably contain monomers having structures (I) and (II) below:
- R C comprises a chromophore and R D comprises a reactive site for reaction with the cross-linking component.
- polystyrene resin containing monomers (I) and (II)
- monomers (I) and (II) can also be used.
- the polymer contains various combinations of monomers (I) and (II) including linear structures such that the average structure for R C -containing monomers may be represented as structure (III) below and the average structure for R D -containing monomers may be represented by structure (IV) below:
- x is from 1 to 1.5.
- x may be greater than 1.5, however, such compositions generally do not possess characteristics suitable for spin-coating processes (e.g., they form undesirable gel or precipitate phases).
- silsesquioxane polymers are preferred. If the ordinary organosiloxane polymers are used (e.g., monomers of linear structures (I) and (III)), then preferably, the degree of cross-linking is increased compared to formulations based on silsesquioxanes.
- the chromophore-containing groups R C may contain any suitable chromophore which (i) can be grafted onto the silicon-containing polymer (or M moiety of the generic monomer defined above) (ii) has suitable radiation absorption characteristics at the imaging wavelength, and (iii) does not adversely affect the performance of the layer or any overlying layers.
- Preferred chromophore moieties include benzene and its derivatives, chrysenes, pyrenes, fluoranthrenes, anthrones, benzophenones, thioxanthones, and anthracenes.
- Anthracene derivatives such as those described in U.S. Pat. No. 4,371,605 may also be used; the disclosure of this patent is incorporated herein by reference.
- phenol, hydroxystyrene, and 9-anthracene methanol are preferred chromophores.
- the chromophore moiety preferably does not contain nitrogen, except for possibly deactivated amino nitrogen such as in phenol thiazine.
- the chromophore moieties may be chemically attached by acid-catalyzed O-alkylation or C-alkylation such as by Friedel-Crafts alkylation.
- the chromophore moieties may also be chemically attached by hydrosilylation of SiH bond on the parent polymer.
- the chromophore moiety may be attached by an esterification mechanism.
- a preferred acid for Friedel-Crafts catalysis is HCl.
- the functional groups contain chromophore moieties.
- the site for attachment of the chromophore is preferably an aromatic group such as a hydroxybenzyl or hydroxymethylbenzyl group.
- the chromophore may be attached by reaction with other moieties such as cyclohexanol or other alcohols.
- the reaction to attach the chromophore is preferably an esterification of the alcoholic OH group.
- R D (or R B in the generic description above) comprises a reactive site for reaction with a cross-linking component.
- Preferred reactive moieties contained in R D are alcohols, more preferably aromatic alcohols (e.g., hydroxybenzyl, phenol, hydroxymethylbenzyl, etc.) or cycloaliphatic alcohols (e.g., cyclohexanoyl).
- aromatic alcohols e.g., hydroxybenzyl, phenol, hydroxymethylbenzyl, etc.
- cycloaliphatic alcohols e.g., cyclohexanoyl
- non-cyclic alcohols such as fluorocarbon alcohols, aliphatic alcohols, amino groups, vinyl ethers, and epoxides may be used.
- the silicon-containing polymer (before attachment of the chromophore) of a liquid deposited ARC 16 is poly(4-hydroxybenzylsilsesquioxane).
- silsesquioxane polymers include: poly(p-hydroxyphenylethylsilsesquioxane), poly(p-hydroxyphenylethylsilsesquioxane-co-p-hydroxy-alpha-methylbenzylsilsesquioxane), poly(p-hydroxyphenylethylsilsesquioxane-co-methoxybenzylsilsesquioxane), poly(p-hydroxyphenylethylsilsesquioxane-co-t-butylsilsesquioxane), poly(p-hydroxyphenylethylsilsesquioxane-co-cyclohexylsilsesquioxane), poly(p-hydroxyphenylethylsilsesquioxane
- the Si containing polymers that can be used in a liquid deposited ARC 16 preferably have a weight average molecular weight, before reaction with the cross-linking component, of at least 1000, more preferably a weight average molecular weight of 1000-10000.
- the cross-linking component of the liquid deposited ARC 16 is preferably a crosslinker that can be reacted with the SiO containing polymer in a manner which is catalyzed by generated acid and/or by heating.
- This cross-linking component can be inorganic or organic in nature. It can be a small compound (as compared with a polymer or copolymer) or a polymer, a copolymer, or a blend including at least two of any combination of polymers and/or copolymers, wherein the polymers include one monomer and the copolymers include at least two monomers.
- the cross-linking component used in the liquid deposited antireflective compositions may be any suitable cross-linking agent known in the negative photoresist art which is otherwise compatible with the other selected components of the composition.
- the cross-linking agents preferably act to crosslink the polymer component in the presence of a generated acid.
- Preferred cross-linking agents are glycoluril compounds such as tetramethoxymethyl glycoluril, methylpropyltetramethoxymethyl glycoluril, and methylphenyltetramethoxymethyl glycoluril, available under the POWDERLINK trademark from American Cyanamid Company.
- Other possible cross-linking agents include: 2,6-bis(hydroxymethyl)-p-cresol, compounds having the following structures:
- cross-linking agents such as bis-epoxies or bis-phenols (e.g., bisphenol-A) may also be used. Combinations of cross-linking agents may be used.
- the cross-linking component may be chemically bonded to the Si containing polymer backbone.
- the cross-linking component is a silicon-containing polymer having at least one unit selected from a siloxane, silane, carbosilane, oxycarbosilane, silsesquioxane, alkyltrialkoxysilane, and tetra-alkoxysilane.
- the polymer is preferably a polymer, a copolymer, a blend including at least two of any combination of polymers and/or copolymers, wherein the polymers include one monomer and the copolymers include at least two monomers and wherein the monomers of the polymers and the momoners of the copolymers are selected from a siloxane, silane, carbosilane, oxycarbosilane, silsesquioxane, alkyltrialkoxysilane, tetra-alkoxysilane, unsaturated alkyl substituted silsesquioxane, unsaturated alkyl substituted siloxane, unsaturated alkyl substituted silane, an unsaturated alkyl substituted carbosilane, unsaturated alkyl substituted oxycarbosilane, carbosilane substituted silsesquioxane, carbosilane substituted siloxane, carbosilane substituted silane, carbo
- the acid generator used in the liquid deposited ARC composition is preferably an acid generator compound that liberates acid upon thermal treatment.
- thermal acid generators are suitably employed such as, for example, 2,4,4,6-tetrabromocyclohexadienone, benzoin tosylate, 2-nitrobenzyl tosylate and other alkyl esters of organic sulfonic acids, blocked alkyl phosphoric acids, blocked perfluoroalkyl sulfonic acids, alkyl phosphoric acid/amine complexes, perfluoroalkyl acid quats wherein the blocking can be by covalent bonds, amine and quaternary ammonium.
- Compounds that generate a sulfonic acid upon activation are generally suitable.
- thermally activated acid generators are described in U.S. Pat. Nos. 5,886,102 and 5,939,236; the disclosures of these two patents are incorporated herein by reference.
- a radiation-sensitive acid generator may be employed as an alternative to a thermally activated acid generator or in combination with a thermally activated acid generator. Examples of suitable radiation-sensitive acid generators are described in U.S. Pat. Nos. 5,886,102 and 5,939,236.
- Other radiation-sensitive acid generators known in the resist art may also be used as long as they are compatible with the other components of the antireflective composition.
- the cure (cross-linking) temperature of the composition may be reduced by application of appropriate radiation to induce acid generation which in turn catalyzes the cross-linking reaction. Even if a radiation-sensitive acid generator is used, it is preferred to thermally treat the composition to accelerate the cross-linking process (e.g., for wafers in a production line).
- the antireflective compositions used in the liquid deposition process preferably contain (on a solids basis) (i) from 10 wt % to 98 wt. % of a polymer including M, more preferably from 70 wt. % to 80 wt. %, (ii) from 1 wt % to 80 wt. % of cross-linking component, more preferably from 3 wt. % to 25%, most preferably from 5 wt. % to 25 wt. %, and (iii) from 1 wt. % to 20 wt. % acid generator, more preferably 1 wt. % to 15 wt. %.
- ARC 16 When ARC 16 is formed by liquid deposition process any liquid deposition process including for example, spin-on coating, spray coating, dip coating, brush coating, evaporation or chemical solution deposition can be used.
- a post deposition baking step is typically, but not necessarily always, used to remove unwanted components, such as solvent, and to effect crosslinking.
- the baking step is conducted at a temperature from 60° C. to 400° C., with a baking temperature from 80° C. to 300° C. being even more preferred.
- the duration of the baking step varies and is not critical to the practice of the present invention.
- the baked and previously liquid deposited ARC 16 may further undergo a curing process.
- the curing is performed in the present invention by a thermal cure, an electron beam cure, an ultra-violet (UV) cure, an ion beam cure, a plasma cure, a microwave cure or any combination thereof.
- UV ultra-violet
- the as-deposited and cured ARC 16 may be subjected to a post deposition treatment to improve the properties of the entire layer or the surface of the ARC 16 .
- This post deposition treatment can be selected from heat treatment, irradiation of electromagnetic wave (such as ultra-violet light), particle beam (such as an electron beam, or an ion beam), plasma treatment, chemical treatment through a gas phase or a liquid phase (such as application of a monolayer of surface modifier) or any combination thereof.
- electromagnetic wave such as ultra-violet light
- particle beam such as an electron beam, or an ion beam
- plasma treatment chemical treatment through a gas phase or a liquid phase (such as application of a monolayer of surface modifier) or any combination thereof.
- the conditions for these treatments are similar to the ones mentioned above for the optional dielectric cap 14 .
- composition of the starting precursor used in liquid deposition as well as the introduction of oxygen, nitrogen, fluorine containing precursors also allows the tunability of these films.
- the ARC's optical constants are defined here as the index of refraction n and the extinction coefficient k.
- ARC 16 can be modeled so as to find optimum optical parameters (n and k values) of ARC as well as optimum thickness.
- ARC 16 in any embodiment does not interact with the patternable low-k material to induce residue, footing or undercutting. Moreover, ARC 16 has good etch selectivity to the patternable dielectric material. Etch selectivities of 1.5-4 to 1 of ARC 16 to low-k dielectric material can be obtained. Furthermore, the use of the ARC 16 of described above (vapor or liquid deposited) maintains the pattern and structural integrity after curing of the patternable low-k material. This is critical as ARC layer 16 is retained as a permanent part of the final interconnect stack.
- a first patternable low-k material 18 which combines the function of a photoresist and low-k material into one single material is provided. As shown, the first patternable low-k material 18 is provided directly on the surface of the ARC 16 .
- the first patternable low-k material 18 is provided (i.e., formed) utilizing a conventional deposition process including, for example, spin-on-coating, dip coating, brush coating, spray coating, and ink-jet dispensing.
- a post deposition baking step is typically, but not necessarily always, required to remove unwanted components, such as solvent.
- the baking step is conducted at a temperature from 40° C. to 200° C., with a baking temperature from 60° C. to 140° C. being even more preferred.
- the duration of the baking step varies from 10 seconds to 600 seconds and is not critical herein.
- the thickness of the first patternable low-k material 18 may vary depending on the requirement of the chip and the technique used to form the same as well as the material make-up of the layer. Typically, the first patternable low-k material 18 has a thickness from 1 nm to 50000 nm, with a thickness from 20 nm to 5000 nm being more typical.
- the first patternable low-k material 18 functions as a photoresist and is converted into a low-k material during post patterning processing, by heat, UV light, electron beam, ion beam, microwave, plasma cure, thermal cure or a combination thereof.
- the first patternable low-k material 18 may comprise a functionalized polymer, copolymer, or a blend including at least two of any combination of polymers and/or copolymers having one or more acid-sensitive imageable groups. These polymers, copolymers or blends can be converted into low-k polymers after subsequent processing. It is noted that when the patternable low-k material 18 is a polymer, it includes at least one monomer (to be described in greater detail below).
- the patternable low-k material 18 is a copolymer, it includes at least two monomers (to be described in greater detail below).
- the blends of polymers and/or copolymers include at least two of any combination of polymers and/or copolymers described below.
- the patternable low-k material 18 comprises a polymer, a copolymer, or a blend including at least two of any combination of polymers and/or copolymers, wherein the polymers include one monomer and the copolymers include at least two monomers and wherein the monomers of the polymers and the momoners of the copolymers are selected from a siloxane, silane, carbosilane, oxycarbosilane, silsesquioxane, alkyltrialkoxysilane, tetra-alkoxysilane, unsaturated alkyl substituted silsesquioxane, unsaturated alkyl substituted siloxane, unsaturated alkyl substituted silane, an unsaturated alkyl substituted carbosilane, unsaturated alkyl substituted oxycarbosilane, carbosilane substituted silsesquioxane, carbosilane substituted siloxane, carbosilane
- the first patternable low-k material 18 comprises a photo/acid-sensitive polymer of one monomer or a copolymer of at least two monomers selected from siloxane, silane, carbosilane, oxycarbosilane, organosilicates, silsesquioxanes and the like.
- the first patternable low-k material 18 may also comprise a polymer of one monomer or a copolymer of at least two monomers selected from alkyltrialkoxysilane, tetra-alkoxysilane, unsaturated alkyl (such as vinyl) substituted silsesquioxane, unsaturated alkyl substituted siloxane, unsaturated alkyl substituted silane, an unsaturated alkyl substituted carbosilane, unsaturated alkyl substituted oxycarbosilane, carbosilane substituted silsesquioxane, carbosilane substituted siloxane, carbosilane substituted silane, carbosilane substituted carbosilane, carbosilane substituted oxycarbosilane, oxycarbosilane substituted silsesquioxane, oxycarbosilane substituted siloxane, oxycarbosilane substituted siloxane, oxy
- the patternable low-k dielectric material 18 may comprise a blend including at least two of any combination of polymers and/or copolymers, wherein the polymers include one monomer and the copolymers include at least two monomers and wherein the monomers of the polymers and the momoners of the copolymers are selected from a siloxane, silane, carbosilane, oxycarbosilane, silsesquioxane, alkyltrialkoxysilane, tetra-alkoxysilane, unsaturated alkyl substituted silsesquioxane, unsaturated alkyl substituted siloxane, unsaturated alkyl substituted silane, an unsaturated alkyl substituted carbosilane, unsaturated alkyl substituted oxycarbosilane, carbosilane substituted silsesquioxane, carbosilane substituted siloxane, carbosilane substituted silane, carbosilane substituted si
- the first patternable low-k material 18 may comprise at least one microscopic pore generator (porogen).
- the pore generator may be or may not be photo/acid sensitive.
- photo/acid sensitive it means that this porogen is sensitive to light and/or acid such that the porogen itself is patternable or enhances the resolution and/or the pattern quality of the patternable low-k material.
- This pore generator has these attributes: (1) is compatible with the other components of the patternable low-k composition, i.e., without phase separation after coating and other processing; (2) can be patterned with standard lithographic techniques as part of the patternable low-k composition; and (3) can be removed during the post patterning cure process to generate microscopic pores, thus lowering the dielectric constant of the cured patternable low-k material.
- the pore size (diameter) should be less than 10 nm, preferably less than 5 nm, and more preferably less than 2 nm.
- Illustrative polymers for the patternable low-k material 18 include, but are not limited to, siloxane, silane, carbosilane, oxycarbosilane, silsesquioxanes-type polymers including caged, linear, branched or a combination thereof.
- the first patternable material 18 comprises a blend of these photo/acid-sensitive polymers. Examples of patternable low-k materials useable with the present disclosure are disclosed in U.S. Pat. Nos. 7,041,748, 7,056,840, and 6,087,064, as well as U.S. Ser. Nos. 11/750,356, filed May 18, 2007, now U.S. Patent Application Publication No. 2008/0286467, 12/047,435, filed Mar.
- the dielectric constant of the patternable low-k material 18 after cure is generally no more than 4.3.
- the dielectric constant may be greater than 1 and up to 4.3, more preferably from 1 to 3.6, even more preferably from 1 to 3.0, further more preferably from 1 to 2.5, with from 1 to 2.0 being most preferred.
- the first patternable low-k material 18 is formed from a composition that includes at least one of the above mentioned polymers, copolymers or blends, a photoacid generator, a base additive and a solvent typically used in a photoresists.
- the first patternable low-k material 18 is a negative-tone patternable low-k material, it may be formed from a composition optionally including an additional cross-linker.
- This additional cross-linker can be a small compound (as compared with a polymer or copolymer) or a polymer, a copolymer, or a blend including at least two of any combination of polymers and/or copolymers, wherein the polymers include one monomer and the copolymers include at least two monomers and wherein the monomers of the polymers and the momoners of the copolymers are selected from a siloxane, silane, carbosilane, oxycarbosilane, silsesquioxane, alkyltrialkoxysilane, tetra-alkoxysilane, unsaturated alkyl substituted silsesquioxane, unsaturated alkyl substituted siloxane, unsaturated alkyl substituted silane, an unsaturated alkyl substituted carbosilane, unsaturated alkyl substituted oxycarbosilane, carbosilane substituted silsesquioxane,
- the first patternable low-k material 18 is a positive-tone patternable low-k material, it is formed from a composition that includes at least one of the above mentioned polymers, copolymers or blends, a photoacid generator, a base additive and a solvent typically used in a photoresists.
- the photoacid generators, base additives and solvents are well known to those skilled in the art and, as such, details regarding those components are not fully provided.
- the first patternable low-k material 18 is a chemically amplified positive-tone or negative-tone patternable low-k material that comprises a silsesquioxane polymer or copolymer or a blend of at least two of any combination of polymers and/or copolymers.
- This photo/acid sensitive silsesquioxane polymer or copolymer may undergo a photo/acid catalyzed chemical transformation to form circuit patterns after lithographic patterning.
- the first patternable low-k material 18 When the first patternable low-k material 18 is a chemically amplified positive-tone patternable low-k material, it typically undergoes a de-protection reaction to render the exposed area soluble in a developer; when the first patternable low-k material 18 is a chemically amplified negative-tone patternable low-k material, it typically undergoes a cross-linking reaction (to itself or through an additional cross-linker) to render it insoluble in a developer in the exposed regions during lithographic processing. Therefore, integrated circuit patterns can be generated during standard semiconductor lithography process. Furthermore, these integrated circuit patterns maintain their pattern integrity during the post patterning cure process to convert the patternable low-k material from a resist into a low-k material.
- photo/acid sensitive silsesquioxane polymers or copolymers examples include poly(methylsilsesquioxane) (PMS), poly(p-hydroxybenzylsilsesquioxane) (PHBS), poly(p-hydroxyphenylethylsilsesquioxane) (PHPES), poly(p-hydroxyphenylethylsilsesquioxane-co-p-hydroxy-alpha-methylbenzyl silsesquioxane) (PHPE/HMBS), poly(p-hydroxyphenylethylsilsesquioxane-co-methoxybenzylsilsesquioxane) (PHPE/MBS), poly(p-hydroxyphenylethylsilsesquioxane-co-t-butylsilsesquioxane) (PHPE/BS), poly(p-hydroxyphenylethylsilsesquioxane-co-cyclohexylsilsesquiox
- the patternable low-k material 18 is a copolymer of at least two monomers selected from an alkyltrialkoxysilane and/or a tetra-alkoxysilane.
- Preferred copolymers are derived from at least two monomers selected from methyltrimethoxysilane, methyltriethoxysilane, ethyltrimethoxysilane, or ethyltriethoxysilane, as the alkyltrialkoxysilane monomer and tetra-methoxysilane or tetra-ethoxysilane, as the tetra-alkoxysilane monomer.
- the first patternable low-k material 18 comprises a polymer of one monomer or a copolymer of at least two monomers selected from alkyltrialkoxysilane, tetra-alkoxysilane, unsaturated alkyl (such as vinyl) substituted silsesquioxane, unsaturated alkyl substituted siloxane, unsaturated alkyl substituted silane, an unsaturated alkyl substituted carbosilane, unsaturated alkyl substituted oxycarbosilane, carbosilane substituted silsesquioxane, carbosilane substituted siloxane, carbosilane substituted silane, carbosilane substituted carbosilane, carbosilane substituted oxycarbosilane, oxycarbosilane substituted silsesquioxane, oxycarbosilane substituted siloxane, oxycarbosilane substituted siloxane, oxycarb
- the first patternable low-k material 18 comprises a silsesquioxane polymer. It may be linear, branched, caged compound or a combination thereof having the following general structural formula:
- R 1 represents a group which may comprise one or more functional groups which may provide polymer solubility in an aqueous base and provide functional groups for cross-linking
- R 2 represents a group which may comprise a carbon functionality which may control polymer dissolution rate in an aqueous base and/or an imaging function for positive-tone or negative-tone patterning.
- Subscripts m and n may be integers in the range from 0 to 50000, such as 1 to 5000 for example.
- R 1 may not be the same as R 2 .
- R 1 is not limited to any specific functional group, and may comprise functional groups which are substituted with —OH groups, —C(O)OH groups, —F, or a combination thereof.
- R 1 may comprise linear or branched alkyls, cycloalkyls, aromatics, arenes, or acrylics.
- R 1 may be:
- R 2 is not necessarily limited to any specific functional group, and may comprise hydrogen, or linear or branched alkyls, cylcoalkyls, aromatics, arenes, acrylates, or a combination thereof.
- R 2 may be:
- the R 1 and R 2 proportions and structures may be selected to provide a material suitable for photolithographic patterning processes.
- the first patternable low-k material 18 is a negative-tone patternable low-k dielectric material comprising a blend including at least two of any combination of polymers and/or copolymers, wherein the polymers include one monomer and the copolymers include at least two monomers and wherein the monomers of the polymers and the momoners of the copolymers are selected from a siloxane, silane, carbosilane, oxycarbosilane, silsesquioxane, alkyltrialkoxysilane, tetra-alkoxysilane, unsaturated alkyl substituted silsesquioxane, unsaturated alkyl substituted siloxane, unsaturated alkyl substituted silane, an unsaturated alkyl substituted carbosilane, unsaturated alkyl substituted oxycarbosilane, carbosilane substituted silsesquioxane, carbosilane substituted siloxane, carbo
- the second polymer of the polymer blend of this embodiment may comprise a polymer of one monomer or a copolymer including at least two monomers and wherein the monomers of the polymers and the monomers of the copolymers are selected from a siloxane, silane, carbosilane, oxycarbosilane, silsesquioxane, alkyltrialkoxysilane, tetra-alkoxysilane, unsaturated alkyl substituted silsesquioxane, unsaturated alkyl substituted siloxane, unsaturated alkyl substituted silane, an unsaturated alkyl substituted carbosilane, unsaturated alkyl substituted oxycarbosilane, carbosilane substituted silsesquioxane, carbosilane substituted siloxane, carbosilane substituted silane, carbosilane substituted carbosilane, carbosilane substituted oxycarbosilane
- the second polymer of the polymer blend may comprise a copolymer at least two monomers selected from siloxane, silane, silsesquioxane, carbosilane, or oxycarbosilane moieties.
- the second polymer of the polymer blend may comprise a copolymer of at least two monomers selected from an alkyltrialkoxysilane and/or a tetra-alkoxysilane.
- the molar ratio of the alkyltrialkoxysilane monomer in the copolymer ranges from 0 to 100%.
- the weight average molecular weight of the copolymer range from 100-5,000,000 g/mol, preferably 500-50,000 g/mol.
- Preferred second polymers of the polymer blend are copolymers derived from at least two monomers selected from methyltrimethoxysilane, methyltriethoxysilane, ethyltrimethoxysilane, or ethyltriethoxysilane, as the alkyltrialkoxysilane monomer and tetra-methoxysilane or tetra-ethoxysilane, as the tetra-alkoxysilane monomer.
- the second polymer of the polymer blend is a copolymer of methylsilsesquioxane and tetra-alkoxysilane.
- the second polymer of the polymer blend is a silsesquioxane polymer comprising a polymer having the structural formula:
- R 3 may be a functional group comprising alkyls, cycloalkyls, aryl, or a combination thereof, and wherein x represents the number of repeating units and may be an integer in a range from 4 to 50000.
- R 3 may be:
- the polysilsesquioxane may be poly(methylsilsesquioxane), where R 3 is a methyl group, and x is an integer from 10 to 1,000. In other embodiments, x may be greater than 1,000.
- the polysilsesquioxane may also comprise a copolymer with siloxane, silane, carbosilane, oxycarbosilane, alkyltrialkoxysilane, or tetra-alkoxysilane.
- the polysilsesquioxane structure may be caged, linear, branched, or a combination thereof.
- silsesquioxane polymers described herein may comprise end groups comprising silanols, halosilanes, acetoxysilanes, silylamines, alkoxysilanes, or a combination thereof, which may undergo condensation reactions in the presence of an acid (such as an acid generated by a photoacid generator under exposure to radiation), followed by thermal baking.
- Polymer molecules of the polysilsesquioxane may undergo chemical crosslinking with the first polymer or copolymer of the polymer blend, the second polysilsesquioxane polymer or copolymer in the polymer blend itself, or a combination of these.
- the polysilsesquioxane may be the silsesquioxane copolymer LKD-2056 or LKD2064 (products of JSR Corporation) which contains silanol end groups.
- Such crosslinking may be not limited to silanols, but may also include halosilanes, acetoxysilanes, silylamines, and alkoxysilanes.
- the silsesquioxane polymers described herein may undergo chemical crosslinking, including photoacid-catalyzed crosslinking, thermally induced crosslinking, or a combination of these, such as condensation reactions of silanol end groups, for example.
- the second silsesquioxane polymers or copolymers in the polymer blend may have a weight averaged molecular weight in the range from 200 to 5,000,000 g/mol, such as from 1500 to 10,000 g/mol, for example.
- the first patternable low-k material 18 is a negative-tone patternable low-k material comprising a carbosilane-substituted silsesquioxane polymer that may be a linear, branched, caged compound or a combination thereof, having the following general structural formula:
- R 4 , R 5 , R 6 , R 7 , and R 8 are carbon-containing groups, and R 9 is an alkoxy group.
- R 6 , R 7 and R 8 may each independently represent a hydrocarbon group comprising 1 to 6 carbon atoms.
- R 4 , R 5 , R 6 , R 7 , R 8 , R 9 may be non-identical groups.
- Subscripts a, b, and c represent the number of repeating units in the polymer chain.
- Subscripts q and r may be integers in a range from 0 to 3.
- Subscript s may be an integer in a range from 1 to 3.
- Subscripts a and c may be integers greater than zero.
- a and c may each independently be in a range from 1 to 5,000.
- Subscript b may be an integer greater than or equal to zero.
- b may be an integer in a range from 0 to 5,000.
- R 4 may represent a group which comprises one or more functional groups which provide polymer solubility in an aqueous base and functional groups for a cross-linking reaction. Each instance of R 4 is not limited to any specific functional group, and may comprise a functional group which is substituted with one or more —OH groups, —C(O)OH groups, —F, or a combination thereof. R 4 may comprise linear or branched alkyls, cycloalkyls, aromatics, arenes, or acrylics. Examples of R 4 include:
- R 5 may represent a group which comprises a carbon functionality comprising at least one carbon atom, where the carbon functionality controls polymer dissolution of the polymer into an aqueous base.
- the structure (e.g., size, chain length, etc.) of R 5 may affect the dissolution rate of the polymer into an aqueous base. Balancing of the dissolution-controlling group, R 5 , with the solubility and cross-linking controlling group, R 4 , allows properties such as dissolution rate and aqueous base solubility to be appropriately adjusted.
- R 5 is not necessarily limited to any specific functional group, and may comprise linear or branched alkyls, cylcoalkyls, aromatics, arenes, acrylates, or a combination thereof. Examples of R 5 include:
- R 6 is not limited to any specific alkoxy group. Examples of R 6 include linear or branched alkoxys, cycloalkoxy, and acetoxy groups.
- R 4 , R 5 , and R 6 may be selected to provide a material suitable for photolithographic patterning processes.
- the first patternable low-k material 18 is a negative-tone patternable low-k material comprising a polymer blend of a first polymer or copolymer and a second polymer or copolymer wherein the first polymer is the carbosilane-substituted silsesquioxane polymer described above and the second polymer is polymer of one monomer or a copolymer of at least two monomers selected from siloxane, silane, silsesquioxane, carbosilane, or oxycarbosilane moieties.
- the second polymer of the polymer blend may comprise a copolymer of at least two monomers selected from an alkyltrialkoxysilane and/or a tetra-alkoxysilane.
- the molar ratio of the alkyltrialkoxysilane monomer in the copolymer ranges from 0 to 100%.
- the weight average molecular weight of the copolymer range from 100-5,000,000 g/mol, preferably 500-50,000 g/mol.
- Preferred second polymers of the polymer blend are copolymers derived from at least two monomers selected from methyltrimethoxysilane, methyltriethoxysilane, ethyltrimethoxysilane, or ethyltriethoxysilane, as the alkyltrialkoxysilane monomer and tetra-methoxysilane or tetra-ethoxysilane, as the tetra-alkoxysilane monomer.
- the second polymer of the polymer blend is a copolymer of methylsilsesquioxane and tetra-alkoxysilane.
- the negative-tone carbosilane-substituted silsesquioxane patternable low-k composition may be a polymer blend of a first polymer and a second polymer wherein the first polymer is the carbosilane-substituted silsesquioxane polymer described above and the second polymer of the polymer blend is a silsesquioxane polymer comprising a polymer having the structural formula:
- R 3 may be a functional group comprising alkyls, cycloalkyls, aryl, or a combination thereof, and wherein x represents the number of repeating units and may be an integer in a range from 4 to 50000.
- R 3 may be:
- the polysilsesquioxane may be poly(methylsilsesquioxane), where R 3 is a methyl group, and x is an integer from 10 to 1,000. In other embodiments, x may be greater than 1,000.
- the polysilsesquioxane may also comprise a copolymer with siloxane, silane, carbosilane, oxycarbosilane, alkyltrialkoxysilane, or tetra-alkoxysilane.
- the polysilsesquioxane structure may be caged, linear, branched, or a combination thereof.
- silsesquioxane polymers or copolymers described herein may comprise end groups comprising silanols, halosilanes, acetoxysilanes, silylamines, alkoxysilanes, or a combination thereof, which may undergo condensation reactions in the presence of an acid (such as an acid generated by a photoacid generator under exposure to radiation), followed by thermal baking.
- Polymer molecules of the polysilsesquioxane may undergo chemical crosslinking with the first polymer or copolymer of the polymer blend, the second polysilsesquioxane polymer or copolymer in the polymer blend itself, or a combination of these.
- the polysilsesquioxane may be the silsesquioxane copolymer LKD-2056 or LKD2064 (products of JSR Corporation) which contains silanol end groups.
- Such crosslinking may be not limited to silanols, but may also include halosilanes, acetoxysilanes, silylamines, and alkoxysilanes.
- the silsesquioxane polymers described herein may undergo chemical crosslinking, including photoacid-catalyzed crosslinking, thermally induced crosslinking, or a combination of these, such as condensation reactions of silanol end groups, for example.
- the silsesquioxane polymers representing the second polymer of the polymer blend described for this embodiment may have a weight averaged molecular weight in the range from 200 g/mol to 500,000 g/mol, such as from 1500 g/mol to 10,000 g/mol, for example.
- compositions containing a blend of at least two of any combination of a silsesquioxane polymer and/or a silsesquioxane copolymer are employed.
- the silsesquioxane polymer or copolymer in the blend may be selected from the silsesquioxane polymers or copolymers described above or may be selected from other silsesquioxane polymers or copolymers such as, for example, poly(methyl-silsesquioxane) (PMS), poly(p-hydroxybenzylsilsesquioxane) (PHBS), poly(p-hydroxybenzylsilsesquioxane-co-methoxybenzylsilsesquioxane) (PHB/MBS), polyp-hydroxy-alpha-methylbenzylsilsesquioxane-co-p-alpha-methylbenzylsilsesquioxane) (PHMB/MBS), poly(p-hydroxybenzyls
- the first patternable low-k material 18 comprises a copolymer of at least two monomers selected from an alkyltrialkoxysilane and/or a tetra-alkoxysilane.
- Preferred copolymers are derived from at least two monomers selected from methyltrimethoxysilane, methyltriethoxysilane, ethyltrimethoxysilane, or ethyltriethoxysilane, as the alkyltrialkoxysilane monomer and tetra-methoxysilane or tetra-ethoxysilane, as the tetra-alkoxysilane monomer.
- the first silsesquioxane polymer or copolymer is a linear, branched, caged compound or combination thereof having the following structural formula:
- each occurrence of R 10 is one or more acidic functional groups for base solubility and provides functional groups for cross-linking; each occurrence of R 11 is a carbon functionality for controlling polymer dissolution rate in an aqueous base; R 10 is not equal to R 11 ; j and k represent the number of repeating units; j is an integer; and k is zero or an integer greater than zero.
- R 10 is not limited to any specific functional group, and is preferably selected from among linear or branched alkyls which are substituted with OH, C(O)OH, and/or F; cycloalkyls which are substituted with OH, C(O)OH, and/or F; aromatics which are substituted with OH, C(O)OH, and/or F; arenes that are substituted with OH, C(O)OH, and/or F; and acrylics which are substituted with OH, C(O)OH, and/or F.
- Examples of preferred R 10 include:
- R 11 is not limited to any specific carbon functional group, and is preferably selected from among linear or branched alkyls, cylcoalkyls, aromatics, arenes, and acrylates.
- the silsesquioxane polymers or copolymers of this embodiment have a weight averaged molecular weight of 400 to 500,000, and more preferable from 1500 to 10,000.
- the R 10 and R 11 proportions and structures are selected to provide a material suitable for photolithographic processes.
- a second polymer component of the blend material includes but is not limited to a family of organosilicates known as silsesquioxanes having the structural formula:
- R 3 may be a functional group comprising alkyls, cycloalkyls, aryl, or a combination thereof, and wherein x represents the number of repeating units and may be an integer in a range from 4 to 50000.
- R 3 may be:
- the polysilsesquioxane may be poly(methylsilsesquioxane), where R 3 is a methyl group, and x is an integer from 10 to 1,000. In other embodiments, x may be greater than 1,000.
- the polysilsesquioxane may also comprise a copolymer with siloxane, silane, carbosilane, oxycarbosilane, alkyltrialkoxysilane, or tetra-alkoxysilane.
- the polysilsesquioxane structure may be caged, linear, branched, or a combination thereof.
- silsesquioxane polymers or copolymers described herein may comprise end groups comprising silanols, halosilanes, acetoxysilanes, silylamines, alkoxysilanes, or a combination thereof, which may undergo condensation reactions in the presence of an acid (such as an acid generated by a photoacid generator under exposure to radiation), followed by thermal baking.
- Polymer molecules of the polysilsesquioxane may undergo chemical crosslinking with the first polymer or copolymer of the polymer blend, the second polysilsesquioxane polymer or copolymer in the polymer blend itself, or a combination of these.
- the polysilsesquioxane may be the silsesquioxane copolymer LKD-2056 or LKD2064 (products of JSR Corporation) which contains silanol end groups.
- Such crosslinking may be not limited to silanols, but may also include halosilanes, acetoxysilanes, silylamines, and alkoxysilanes.
- the silsesquioxane polymers described herein may undergo chemical crosslinking, including photoacid-catalyzed crosslinking, thermally induced crosslinking, or a combination of these, such as condensation reactions of silanol end groups, for example.
- a third component of a negative-tone patternable low-k composition is a photosensitive acid generator (PAG).
- PAGs include: -(trifluoro-methylsulfonyloxy)-bicyclo[2.2.1]hept-5-ene-2,3-dicarboximide (MDT), onium salts, aromatic diazonium salts, sulfonium salts, diaryliodonium salts, and sulfonic acid esters of N-hydroxyamides or -imides, as disclosed in U.S. Pat. No. 4,371,605. The content of the '605 patent is incorporated herein by reference.
- a weaker acid generated from a PAG such as N-hydroxy-naphthalimide (DDSN) may be used. Combinations of PAGs may be used.
- composition of the silsesquioxane polymers or copolymers in the blend formulation is 1% to 99% of the total polymer composition.
- the composition of the acid sensitive polymer is 20% to 80% of the total polymer composition, and even more preferred, 30% to 60%.
- Condensation in the presence of an acid generated by a photoacid generator under exposure to radiation is not limited to silanols, but may also include halosilanes, acetoxysilanes, silylamines, and alkoxysilanes.
- Organic crosslinking agents such as methylphenyltetramethoxymethyl glycouril (methylphenyl powderlink), may also be included in the formulation.
- photoacid generators are preferred for crosslinking
- photobase generators can also be used for crosslinking silanol polymers or copolymers.
- the first patternable low-k material 18 also typically includes a casting solvent to dissolve the other components.
- suitable casting solvent include but are not limited to ethoxyethylpropionate (EEP), a combination of EEP and ⁇ -butyrolactone, propylene-glycol monomethylether alcohol and acetate, propyleneglycol monopropyl alcohol and acetate, and ethyl lactate. Combinations of these solvents may also be used.
- an organic base may be added to the formulation.
- the base employed in the present invention may be any suitable base known in the resist art. Examples of bases include tetraalkylammonium hydroxides, cetyltrimethylammonium hydroxide, and 1,8-diaminonaphthalene.
- the compositions are not limited to any specific selection of base.
- the first patternable low-k material 18 is a chemically amplified positive-tone patternable low-k material comprising a silicon-containing polymer.
- the silicon-containing polymer employed may be a homopolymer or a copolymer.
- Suitable types of such silicon-containing polymers include a polymer, a copolymer, a blend including at least two of any combination of polymers and/or copolymers, wherein said polymers include one monomer and said copolymers include at least two monomers and wherein said monomers of said polymers and said momoners of said copolymers are selected from a siloxane, silane, carbosilane, oxycarbosilane, silsesquioxane, alkyltrialkoxysilane, tetra-alkoxysilane, unsaturated alkyl substituted silsesquioxane, unsaturated alkyl substituted siloxane, unsaturated alkyl substituted silane, an unsaturated alkyl substituted carbosilane, unsaturated alkyl substituted oxycarbosilane, carbosilane substituted silsesquioxane, carbosilane substituted siloxane, carbosilane substituted
- Highly preferred silicon-backbone polymers are selected from the group consisting of poly(hydroxyphenyl alkyl)silsesquioxanes and poly(hydroxyphenyl alkyl) siloxanes, wherein the alkyl is a C 1-30 moiety. These preferred silicon-containing polymers are preferably fully or partially protected with acid-sensitive protecting groups.
- the first patternable low-k material 18 is a chemically amplified positive-tone patternable low-k material comprising a polymer of one monomer or a copolymer of at least two monomers wherein a silicon-containing substituent is chemically bonded to the monomer of the polymers or copolymers.
- the silicon-containing substituent may or may not be acid sensitive. Typically, however the substituent is acid sensitive when containing a C 2 alkyl moiety.
- the silicon-containing substituent is attached to a monomer selected from the group consisting of hydroxystyrene, an acrylate, a methacrylate, an acrylamide, a methacrylamide, itaconate, an itaconic half ester or a cycloolefin.
- Preferred silicon-containing substituents include: siloxane, silane and cubic silsesquioxanes.
- the silicon-containing polymer may further include silicon-free monomers such as those selected from the group consisting of styrene, hydroxystyrene, acrylic acid, methacrylic acid, itaconic acid and an anhydride such as maleic anhydride and itaconic anhydride.
- Preferred monomers containing silicon-containing substituents are trimethylsilyl alkyl acrylate, trimethylsilyl alkyl methacrylate, trimethylsilyl alkyl itaconate, tris(trimethylsilyl)silyl alkyl acrylate tris(trimethylsilyl)silyl alkyl methacrylate, tris(trimethylsilyl)silyl alkyl itaconate, tris(trimethylsilyloxy)silyl alkyl acrylate, tris(trimethylsilyloxy)silyl alkyl methacrylate, tris(trimethylsilyloxy)silyl alkyl itaconate, alkylsilyl styrene, trimethylsilylmethyl(dimethoxy)silyloxy alkyl acrylate, trimethylsilylmethyl(dimethoxy)silyloxy alkyl methacrylate, trimethylsilylmethyl(dimethoxy)silyloxy alkyl itaconate
- the extent of protection and the amount of co-monomer present are such that the patternable low-k material resist composition will provide good lithography performance, i.e., high resolution and good process window. It should also maintain pattern integrity after post cure processing patterning.
- protecting groups which can be employed are cyclic and branched (secondary and tertiary) aliphatic carbonyls, esters or ethers containing from 3 to 30 carbon atoms, acetals, ketals and aliphatic silylethers.
- cyclic or branched aliphatic carbonyls that may be employed in the present invention include, but are not limited to: phenolic carbonates; t-alkoxycarbonyloxys such as t-butoxylcarbonyloxy and isopropyloxycarbonyloxy.
- a highly preferred carbonate is t-butoxylcarbonyloxy.
- cyclic and branched ethers that may be employed in the present invention include, but are not limited to benzyl ether and t-alkyl ethers such t-butyl ether. Of the aforesaid ethers, it is highly preferred to use t-butyl ether.
- cyclic and branched esters that can be employed are carboxylic esters having a cyclic or branched aliphatic substituent such as t-butyl ester, isobornyl ester, 2-methyl-2-admantyl ester, benzyl ester, 3-oxocyclohexanyl ester, dimethylpropylmethyl ester, mevalonic lactonyl ester, 3-hydroxy-g-butyrolactonyl ester, 3-methyl-g-butylrolactonyl ester, bis(trimethylsilyl)isopropyl ester, trimethylsilylethyl ester, tris(trimethylsilyl)silylethyl ester and cumyl ester.
- carboxylic esters having a cyclic or branched aliphatic substituent such as t-butyl ester, isobornyl ester, 2-methyl-2-admantyl ester, benzyl ester, 3-ox
- acetals and ketals that can be employed include, but are not limited to phenolic acetals and ketals as well as tetrahydrofuranyl, tetrahydropyranyl, 2-ethoxyethyl, methoxycyclohexanyl, methoxycyclopentanyl, cyclohexanyloxyethyl, ethoxycyclopentanyl, ethoxycyclohexanyl, methoxycycloheptanyl and ethoxycycloheptanyl. Of these, it is preferred that a methoxycyclohexanyl ketal be employed.
- silylethers that can be employed include, but are not limited to: trimethylsilylether, dimethylethylsilylether and dimethylpropylsilylether. Of these silylethers, it is preferred that trimethylsilylether be employed.
- the first patternable low-k material 18 is a positive-tone patternable low-k dielectric material comprising a blend including at least two of any combination of polymers and/or copolymers, wherein the polymers include one monomer and the copolymers include at least two monomers and wherein the monomers of the polymers and the momoners of the copolymers are selected from a siloxane, silane, carbosilane, oxycarbosilane, silsesquioxane, alkyltrialkoxysilane, tetra-alkoxysilane, unsaturated alkyl substituted silsesquioxane, unsaturated alkyl substituted siloxane, unsaturated alkyl substituted silane, an unsaturated alkyl substituted carbosilane, unsaturated alkyl substituted oxycarbosilane, carbosilane substituted silsesquioxane, carbosilane substituted siloxane, carbo
- the first patternable low-k material 18 is a positive-tone patternable low-k material comprising a polymer blend of at least two silsesquioxane polymers or copolymers.
- the polymers or copolymers in the blend may be miscible with each other.
- the first silsesquioxane polymer or copolymer may be linear, branched, caged compound or a combination thereof having the following general structural formula:
- R 12 represents a carbon functionality (the carbon functionality comprising at least one carbon atom) having an acid-labile protecting group
- R 13 represents a group which may comprise one or more functional groups which provide polymer solubility in aqueous base
- R 14 represents a group which may comprise a carbon functionality comprising at least one carbon atom, where the carbon functionality controls polymer dissolution rate of the polymer blend into aqueous base.
- R 12 , R 13 , and R 14 may be non-identical groups.
- Subscripts d, e, and f represent the number of repeating units.
- Subscripts d and f may be integers greater than zero.
- d and f may each independently be in a range from 1 to 5,000.
- Subscript e may be an integer greater than or equal to zero.
- e may be an integer in a range from 0 to 5,000.
- R 12 is not limited to any specific carbon functional group, and may be selected from among conventional acid sensitive protecting groups, such as carbonates, tertiary esters, acetals, ketals, the like, and a combination thereof.
- the acid sensitive protecting group may comprise a tert-butylacetate group, where R 12 may be:
- R 13 is not limited to any specific functional group, and may comprise functional groups which are substituted with —OH groups, —C(O)OH groups, —F, or a combination thereof.
- R 13 may comprise linear or branched alkyls, cycloalkyls, aromatics, arenes, or acrylics.
- R 13 may be
- R 14 is not necessarily limited to any specific functional group, and may comprise linear or branched alkyls, cylcoalkyls, aromatics, arenes, acrylates, or a combination thereof.
- R 14 may be:
- R 12 , R 13 , and R 14 may be selected to provide a material suitable for photolithographic patterning processes.
- the second polymer of the polymer blend of this embodiment of positive-tone patternable low-k material may comprise a polymer of one monomer or a copolymer including at least two monomers and wherein the momoners of the copolymers are selected from a siloxane, silane, carbosilane, oxycarbosilane, silsesquioxane, alkyltrialkoxysilane, tetra-alkoxysilane, unsaturated alkyl substituted silsesquioxane, unsaturated alkyl substituted siloxane, unsaturated alkyl substituted silane, an unsaturated alkyl substituted carbosilane, unsaturated alkyl substituted oxycarbosilane, carbosilane substituted silsesquioxane, carbosilane substituted siloxane, carbosilane substituted silane, carbosilane substituted carbosilane, carbosilane substituted oxycarbo
- the second polymer of the polymer blend may comprise a copolymer of at least two monomers selected from siloxane, silane, silsesquioxane, carbosilane, or oxycarbosilane moieties.
- the second polymer of the polymer blend may comprise a copolymer of at least two monomers selected from an alkyltrialkoxysilane and/or a tetra-alkoxysilane.
- the molar ratio of the alkyltrialkoxysilane monomer in the copolymer ranges from 0 to 100%.
- the weight average molecular weight of the copolymer range from 100-5,000,000 g/mol, preferably 500-50,000 g/mol.
- Preferred copolymers are derived from at least two monomers selected from methyltrimethoxysilane, methyltriethoxysilane, ethyltrimethoxysilane, or ethyltriethoxysilane, as the alkyltrialkoxysilane monomer and tetra-methoxysilane or tetra-ethoxysilane, as the tetra-alkoxysilane monomer.
- the second polymer in the polymer blend for the positive-tone patternable low-k material is a polymer having the structural formula:
- R 3 may be a carbon functional group having at least one carbon atom and wherein the subscript x represents the number of repeating units and may be an integer greater than zero.
- the subscript q may be in a range from 4 to 50,000, such as from 10 to 1,000 for example.
- R 3 may comprise, for example, alkyls, cycloalkyls, aryl, or a combination thereof. Examples of R 3 include:
- the second silsesquioxane polymer may be poly(methylsilsesquioxane) or copolymer, where R 3 is a methyl group, and x is an integer from 4 to 1,000. In another embodiment, x may be greater than 1,000.
- the second silsesquioxane polymer may also comprise a copolymer with siloxane, silane, carbosilane, oxycarbosilane, alkyltrialkoxysilane, or tetra-alkoxysilane.
- the second silsesquioxane polymer or copolymer structure may be caged, linear, branched, or a combination thereof.
- the silsesquioxane polymers of the present invention may comprise end groups comprising silanols, halosilanes, acetoxysilanes, silylamines, alkoxysilanes, and a combination thereof, which may undergo condensation reactions in the presence of an acid generated by a photoacid generator under exposure to radiation, followed by thermal baking.
- Polymer molecules of the second polymer may undergo chemical crosslinking with molecules of the first polymer or copolymer, the second polymer or copolymer, or a combination of these.
- the second silsesquioxane may be the silsesquioxane polymer or copolymer LKD 2021, LKD-2056 or LKD 2064 (products of JSR Corporation) which contain silanol end groups.
- the silsesquioxane polymers or copolymers in the polymer blend may have a weight averaged molecular weight in the range from 400 to 500,000 g/mol, such as from 1500 to 10,000 g/mol, for example.
- a positive-tone patternable low-k material include a photo acid generator, a casting solvent and a base additive. These components and their compositions are well known to those skilled in the art and are similar to those in the negative-tone patternable low-k materials discussed previously.
- photo/acid-sensitive is used throughout the application to denote imageable functional groups which undergo a chemical reaction in the presence of an acid generated by a photoacid generator under exposure to radiation.
- the acid-sensitive imageable functional groups employed may include acid-sensitive positive-tone functional groups or acid-sensitive negative-tone functional groups.
- the negative-tone acid-sensitive functional groups are functional groups for effecting a crosslinking reaction which causes the exposed areas to be insoluble in a developer to form a negative-tone relief image after development.
- the positive-tone acid-sensitive functional groups are acid-sensitive protecting groups which cause the exposed region to be soluble in a developer to form positive-tone relief images after development.
- a positive-tone patternable low-k material 18 is used for via patterning. Either a positive-tone or a negative-tone patternable low-k material 18 is used for line patterning.
- the aforementioned patternable low-k materials act as a photoresist in the present invention during patterning; they can be positive-tone or negative-tone, and sensitive to G-line, I-line, DUV (248 nm, 193 nm, 157 nm, 126 nm, and EUV (13.4 ⁇ m), an electron beam, or an ion beam.
- the first patternable low-k material 18 is pattern-wise exposed to form latent images of a desired circuitry.
- An optional post-exposure baking may be required to effect the photochemical reactions.
- the baking step is conducted at a temperature from 60° C. to 200° C., with a baking temperature from 80° C. to 140° C. being even more preferred.
- the duration of the baking step varies from 10 seconds to 600 seconds and is not critical to the practice of the present invention.
- the latent images are developed into the low-k material with a developer, usually 0.263N tetramethyl-ammonium hydroxide.
- the pattern-wise exposing process can be accomplished in a variety of ways, including, for example, through a mask with a lithography stepper or a scanner with an exposure light source of G-line, Mine (365 nm), DUV (248 nm, 193 nm, 157 nm, 126 nm), Extreme UV (13.4 nm), an electron beam, or an ion beam.
- the pattern-wise exposing process also includes direct writing without the use of a mask with, for example, light, electron beam, ion beam, and scanning probe lithography.
- the pattern-wise exposure is accomplished with an exposure light source of 193 nm wavelength and extreme UV (13.4 nm wavelength).
- the pattern-wise exposure is accomplished with immersion lithography with an exposure light source of 193 nm wavelength wherein in a liquid having a refractive index greater than air (1), e.g., water, is placed to fill a space between the final optical element of a lithography projection system and the patternable low-k material 18 .
- a liquid having a refractive index greater than air (1) e.g., water
- the patternable low-k material 18 must be compatible with the liquid placed between the final optical element of a lithography projection system and the patternable low-k material 18 .
- compatible mainly means low leaching of components from the patternable low-k material 18 into the liquid (generally ⁇ 1.5 ⁇ 10 ⁇ 11 mol/cm 2 ) to avoid contamination and damage of the final optical element of the lithography project system.
- This compatibility can be achieved by a method selected from adding a separate top coating to the patternable low-k material 18 , and adding an appropriate additive to the patternable low-k composition such that it segregates to the top of the patternable low-k film after processing to prevent leaching.
- This top coating can also acts as a top anti-reflective coating for the patternable low-k material 18 . It is conceivable to that use other liquids with higher refractive index than water. Examples of these high-index liquids include cyclic hydrocarbon, and high-index nano-particles suspended in an appropriate liquid.
- FIG. 1C illustrates the structure that is formed after forming a first pattern within the first patternable low-k material 18 .
- Reference numeral 20 denotes the remaining first patternable low-k material which is not removed during the patterning process. As shown the remaining first patternable low-k material (or patterned first low-k material) 20 protects portions of the ARC 16 , while other portions of the ARC 16 are left exposed.
- the low-k material is typically, but not necessarily always, cured to form a cured patterned first low-k material 20 ′ (See, FIG. 1D ) in which the cured low-k material is formed.
- the curing is optional when the first patternable low-k material 18 is negative-tone, but it is generally required when the first patternable low-k material 18 is a positive-tone material.
- This post patterning cure is not required if the patterned first patternable low-k material is compatible with the deposition of the second patternable low-k material thereon. By compatible herein, it means that the deposition of the second patternable low-k material does not dissolve or degrade the pattern and the quality of the patterned first patternable low-k material.
- Curing is performed by a thermal cure, an electron beam cure, an ultra-violet (UV) cure, an ion beam cure, a plasma cure, a microwave cure or a combination thereof.
- UV ultra-violet
- ion beam cure a plasma cure
- microwave cure a microwave cure or a combination thereof.
- the conditions for each of the curing process are well known to those skilled in the art and any condition can be chosen as long as it coverts the patternable low-k material 18 into a low-k film and maintains pattern fidelity.
- an irradiation cure step is performed by a combination of a thermal cure and an ultra-violet (UV) cure wherein the wavelength of the ultra-violet (UV) light is from 50 nm to 300 nm and the light source for the ultra-violet (UV) cure is a UV lamp, an excimer (exciplex) laser or a combination thereof.
- UV ultra-violet
- the excimer laser may be generated from at least one of the excimers selected from the group consisting of Ar 2 *, Kr 2 *, F 2 , Xe 2 *, ArF, KrF, XeBr, XeCl, XeCl, XeF, CaF 2 , KrCl, and Cl 2 wherein the wavelength of the excimer laser is in the range from 50 to 300 nm. Additionally, the light of the ultra-violet (UV) cure may be enhanced and/or diffused with a lens or other optical diffusing device known to those skilled in the art.
- UV ultra-violet
- this post patterning cure is a combined UV/thermal cure.
- This combined UV/thermal cure is carried on a UV/thermal cure module under vacuum or inert atmosphere, such as N 2 , He, Ar.
- the UV/thermal cure temperature is from 100° C. to 500° C., with a cure temperature from 300° C. to 450° C. being more typical.
- the duration of the UV/thermal cure is from 0.5 min to 30 min with a duration from 1 min to 10 min being more typical.
- the UV cure module is designed to have a very low oxygen content to avoid degradation of the resultant dielectric materials.
- a second patternable low-k material 22 is formed providing the structure shown in FIG. 1E .
- the second patternable low-k material 22 may comprise the same or different photo-patternable dielectric material as the first patternable low-k material 18 .
- the deposition processes and thickness mentioned above for the first patternable low-k material 18 are each applicable here for the second patternable low-k material 22 .
- the first patternable low-k material 18 or the second patternable low-k material 22 is either a negative-tone or a positive-tone material.
- the second patternable low-k material 22 is subjected to an exposure step in which the exposure of the second patternable low-k material 22 occurs in an area different from the first patterned low-k material 20 (or 20 ′, if 20 is cured) that remains on the surface of ARC 16 . Typically, this exposure occurs at a half pitch distance from the edge of the patterned first low-k dielectric material.
- the area within the second patternable low-k material 22 which is denoted by reference numeral 24 denotes the exposed area.
- FIG. 1G illustrates the structure of FIG. 1F after further patterning (i.e., development) and curing.
- the further patterning forms a patterned second low-k material on a previous surface on the ARC 16 which does not include the patterned first low-k material 20 (or 20 ′ if 20 is cured).
- reference numeral 26 denotes the patterned and cured second low-k material.
- the further patterning of the second patternable low-k material 22 is performed utilizing the same basic processing equipment and steps as those used for patterning the first patternable low-k material 18 . Curing is also performed as described above. If the patterned first low-k material was not previously cured, the curing step used at this point would cure both the patterned first and second low-k materials.
- the patterned second low-k material has a surface whose height is greater than the height of the adjacent patterned low-k material. Variation to the size and shapes of the resultant patterned low-k material can be obtained and is within the knowledge of those skilled in the art.
- the pattern provided by the patterned first and second low-k materials can optionally be transferred into at least the underlying ARC 16 and optional dielectric cap 14 , if present.
- the resultant structure that is formed after performing pattern transfer forming patterned ARC 16 ′ and optionally patterned dielectric cap 14 ′ is shown, for example, in FIG. 1H .
- the pattern transfer is achieved by utilizing one or more etching steps.
- the one or more etching steps may include dry etching (i.e., reactive-ion etching, ion beam etching, or laser etching), wet etching (i.e., using a suitable chemical etchant) or any combination thereof.
- a dry etching process such as reactive ion etching is employed.
- this etching step is performed prior to the cure of the patterned second patternable low-k material.
- the distance d 1 , between the first patterned feature and the second pattern feature is roughly half of the distance of similar features with one single exposure patterning.
- a third, fourth, etc. patterning can be conceived to further improve resolution by repeating the second patterning process described above.
- interconnect processing can be used, such a formation of a diffusion barrier and deposition of a conductive material can be performed to form an interconnect level of an interconnect structure.
- FIGS. 1A-1H enables high-resolution double patterning with a single material (i.e., a patternable low-k dielectric material).
- a single material i.e., a patternable low-k dielectric material.
- inventive process illustrated above simplifies the double patterning film stack and process and also creates a fine permanent structure which includes the patternable low-k material in a patterned and cured state. Moreover, very small feature sizes can be obtained.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
where RC comprises a chromophore and RD comprises a reactive site for reaction with the cross-linking component.
where x is from 1 to 1.5. In theory, x may be greater than 1.5, however, such compositions generally do not possess characteristics suitable for spin-coating processes (e.g., they form undesirable gel or precipitate phases).
including their analogs and derivatives, such as those found in Japanese Laid-Open Patent Application (Kokai) No. 1-293339, as well as etherified amino resins, for example methylated or butylated melamine resins (N-methoxymethyl- or N-butoxymethyl-melamine respectively) or methylated/butylated glycolurils, for example as can be found in Canadian Patent No. 1 204 547. Other cross-linking agents such as bis-epoxies or bis-phenols (e.g., bisphenol-A) may also be used. Combinations of cross-linking agents may be used. The cross-linking component may be chemically bonded to the Si containing polymer backbone.
where, m and n represent the number of repeating units, R1 represents a group which may comprise one or more functional groups which may provide polymer solubility in an aqueous base and provide functional groups for cross-linking, and R2 represents a group which may comprise a carbon functionality which may control polymer dissolution rate in an aqueous base and/or an imaging function for positive-tone or negative-tone patterning. Subscripts m and n may be integers in the range from 0 to 50000, such as 1 to 5000 for example. R1 may not be the same as R2.
wherein R3 may be a functional group comprising alkyls, cycloalkyls, aryl, or a combination thereof, and wherein x represents the number of repeating units and may be an integer in a range from 4 to 50000. For example, R3 may be:
where, a, b, and c represent the number of each of the repeating units, R4, R5, R6, R7, and R8 are carbon-containing groups, and R9 is an alkoxy group. R6, R7 and R8 may each independently represent a hydrocarbon group comprising 1 to 6 carbon atoms.
wherein R3 may be a functional group comprising alkyls, cycloalkyls, aryl, or a combination thereof, and wherein x represents the number of repeating units and may be an integer in a range from 4 to 50000. For example, R3 may be:
wherein each occurrence of R10 is one or more acidic functional groups for base solubility and provides functional groups for cross-linking; each occurrence of R11 is a carbon functionality for controlling polymer dissolution rate in an aqueous base; R10 is not equal to R11; j and k represent the number of repeating units; j is an integer; and k is zero or an integer greater than zero.
wherein R3 may be a functional group comprising alkyls, cycloalkyls, aryl, or a combination thereof, and wherein x represents the number of repeating units and may be an integer in a range from 4 to 50000. For example, R3 may be:
where, d, e and f represent the number of each of the repeating units, R12 represents a carbon functionality (the carbon functionality comprising at least one carbon atom) having an acid-labile protecting group, R13 represents a group which may comprise one or more functional groups which provide polymer solubility in aqueous base, and R14 represents a group which may comprise a carbon functionality comprising at least one carbon atom, where the carbon functionality controls polymer dissolution rate of the polymer blend into aqueous base. R12, R13, and R14 may be non-identical groups. Subscripts d, e, and f represent the number of repeating units. Subscripts d and f may be integers greater than zero. For example d and f may each independently be in a range from 1 to 5,000. Subscript e may be an integer greater than or equal to zero. For example, e may be an integer in a range from 0 to 5,000.
where R3 may be a carbon functional group having at least one carbon atom and wherein the subscript x represents the number of repeating units and may be an integer greater than zero. The subscript q may be in a range from 4 to 50,000, such as from 10 to 1,000 for example. R3 may comprise, for example, alkyls, cycloalkyls, aryl, or a combination thereof. Examples of R3 include:
Claims (20)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/407,141 US8487411B2 (en) | 2009-08-24 | 2012-02-28 | Multiple patterning using improved patternable low-κ dielectric materials |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/546,235 US8163658B2 (en) | 2009-08-24 | 2009-08-24 | Multiple patterning using improved patternable low-k dielectric materials |
US13/407,141 US8487411B2 (en) | 2009-08-24 | 2012-02-28 | Multiple patterning using improved patternable low-κ dielectric materials |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/546,235 Division US8163658B2 (en) | 2009-08-24 | 2009-08-24 | Multiple patterning using improved patternable low-k dielectric materials |
Publications (2)
Publication Number | Publication Date |
---|---|
US20120161296A1 US20120161296A1 (en) | 2012-06-28 |
US8487411B2 true US8487411B2 (en) | 2013-07-16 |
Family
ID=43604651
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/546,235 Expired - Fee Related US8163658B2 (en) | 2009-08-24 | 2009-08-24 | Multiple patterning using improved patternable low-k dielectric materials |
US13/407,141 Expired - Fee Related US8487411B2 (en) | 2009-08-24 | 2012-02-28 | Multiple patterning using improved patternable low-κ dielectric materials |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/546,235 Expired - Fee Related US8163658B2 (en) | 2009-08-24 | 2009-08-24 | Multiple patterning using improved patternable low-k dielectric materials |
Country Status (1)
Country | Link |
---|---|
US (2) | US8163658B2 (en) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5035562B2 (en) * | 2007-08-22 | 2012-09-26 | 信越化学工業株式会社 | Pattern formation method |
JP2010283145A (en) * | 2009-06-04 | 2010-12-16 | Sony Corp | Solid-state image pickup element and method of manufacturing the same, electronic apparatus |
US8222145B2 (en) * | 2009-09-24 | 2012-07-17 | Dupont Air Products Nanomaterials, Llc | Method and composition for chemical mechanical planarization of a metal-containing substrate |
US8373271B2 (en) * | 2010-05-27 | 2013-02-12 | International Business Machines Corporation | Interconnect structure with an oxygen-doped SiC antireflective coating and method of fabrication |
US8623447B2 (en) | 2010-12-01 | 2014-01-07 | Xerox Corporation | Method for coating dielectric composition for fabricating thin-film transistors |
JP5712777B2 (en) * | 2011-05-10 | 2015-05-07 | 日本軽金属株式会社 | Heat exchanger made of aluminum or aluminum alloy |
US8932961B2 (en) | 2012-02-13 | 2015-01-13 | Globalfoundries Inc. | Critical dimension and pattern recognition structures for devices manufactured using double patterning techniques |
US9761449B2 (en) | 2013-12-30 | 2017-09-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Gap filling materials and methods |
US9564326B2 (en) | 2014-07-17 | 2017-02-07 | International Business Machines Corporation | Lithography using interface reaction |
US20160064649A1 (en) * | 2014-08-28 | 2016-03-03 | Kabushiki Kaisha Toshiba | Magnetic memory device |
JP6455160B2 (en) * | 2015-01-14 | 2019-01-23 | Jsr株式会社 | Radiation-sensitive composition for forming cured film, cured film, display element and method for forming cured film |
US9859494B1 (en) * | 2016-06-29 | 2018-01-02 | International Business Machines Corporation | Nanoparticle with plural functionalities, and method of forming the nanoparticle |
FI129480B (en) * | 2018-08-10 | 2022-03-15 | Pibond Oy | Silanol-containing organic-inorganic hybrid coatings for high resolution patterning |
Citations (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4371605A (en) | 1980-12-09 | 1983-02-01 | E. I. Du Pont De Nemours And Company | Photopolymerizable compositions containing N-hydroxyamide and N-hydroxyimide sulfonates |
CA1204547A (en) | 1981-02-13 | 1986-05-13 | Rudolf Kirchmayr | Curable composition based on an acid-curable resin, and process for curing this resin |
JPH01293339A (en) | 1988-05-23 | 1989-11-27 | Tosoh Corp | Photoresist composition |
US5886102A (en) | 1996-06-11 | 1999-03-23 | Shipley Company, L.L.C. | Antireflective coating compositions |
US5939236A (en) | 1997-02-07 | 1999-08-17 | Shipley Company, L.L.C. | Antireflective coating compositions comprising photoacid generators |
US6025260A (en) | 1998-02-05 | 2000-02-15 | Integrated Device Technology, Inc. | Method for fabricating air gap with borderless contact |
US6087064A (en) | 1998-09-03 | 2000-07-11 | International Business Machines Corporation | Silsesquioxane polymers, method of synthesis, photoresist composition, and multilayer lithographic method |
US6214719B1 (en) | 1999-09-30 | 2001-04-10 | Novellus Systems, Inc. | Method of implementing air-gap technology for low capacitance ILD in the damascene scheme |
US20010016412A1 (en) | 1997-07-28 | 2001-08-23 | Ellis Lee | Interconnect structure with air gap compatible with unlanded vias |
US6455416B1 (en) | 2000-10-24 | 2002-09-24 | Advanced Micro Devices, Inc. | Developer soluble dyed BARC for dual damascene process |
US6514667B2 (en) | 1998-06-29 | 2003-02-04 | International Business Machines Corporation | Tunable vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and applications thereof |
US20030073028A1 (en) | 2001-08-30 | 2003-04-17 | Clean Creative Co. Ltd. | Organic polymers for bottom antireflective coating, process for preparing the same, and compositions containing the same |
US6566019B2 (en) | 2001-04-03 | 2003-05-20 | Numerical Technologies, Inc. | Using double exposure effects during phase shifting to control line end shortening |
US20030129531A1 (en) | 2002-01-09 | 2003-07-10 | Oberlander Joseph E. | Positive-working photoimageable bottom antireflective coating |
US20030198877A1 (en) | 2002-04-16 | 2003-10-23 | International Business Machines Corporation | Antireflective SiO-containing compositions for hardmask layer |
US20040048194A1 (en) | 2002-09-11 | 2004-03-11 | International Business Machines Corporation | Mehod for forming a tunable deep-ultraviolet dielectric antireflection layer for image transfer processing |
US20040094821A1 (en) | 2002-11-15 | 2004-05-20 | Water Lur | Air gap for dual damascene applications |
US20040151489A1 (en) | 2001-03-16 | 2004-08-05 | Xianfeng Zhou | Imaging system for producing double exposure composite images and application thereof |
US6780753B2 (en) | 2002-05-31 | 2004-08-24 | Applied Materials Inc. | Airgap for semiconductor devices |
US6787469B2 (en) | 2001-12-28 | 2004-09-07 | Texas Instruments Incorporated | Double pattern and etch of poly with hard mask |
US6805109B2 (en) | 2002-09-18 | 2004-10-19 | Thomas L. Cowan | Igniter circuit with an air gap |
US6861180B2 (en) | 2002-09-10 | 2005-03-01 | Taiwan Semiconductor Manufacturing Co., Ltd | Contact printing as second exposure of double exposure attenuated phase shift mask process |
US6861367B2 (en) | 2002-02-08 | 2005-03-01 | Micron Technology, Inc. | Semiconductor processing method using photoresist and an antireflective coating |
US20050093158A1 (en) | 2003-10-30 | 2005-05-05 | Chartered Semiconductor Manufacturing Ltd. | Self-patterning of photo-active dielectric materials for interconnect isolation |
US20050263896A1 (en) | 2002-11-15 | 2005-12-01 | Water Lur | Air gap formation method for reducing undesired capacitive coupling between interconnects in an integrated circuit device |
US7041748B2 (en) | 2003-01-08 | 2006-05-09 | International Business Machines Corporation | Patternable low dielectric constant materials and their use in ULSI interconnection |
US7056840B2 (en) | 2003-09-30 | 2006-06-06 | International Business Machines Corp. | Direct photo-patterning of nanoporous organosilicates, and method of use |
US7064078B2 (en) | 2004-01-30 | 2006-06-20 | Applied Materials | Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme |
US7071532B2 (en) | 2003-09-30 | 2006-07-04 | International Business Machines Corporation | Adjustable self-aligned air gap dielectric for low capacitance wiring |
US7091611B2 (en) | 2000-05-31 | 2006-08-15 | Micron Technology, Inc. | Multilevel copper interconnects with low-k dielectrics and air gaps |
US20060228895A1 (en) | 2005-04-06 | 2006-10-12 | Chae Yun-Sook | Method of forming fine pitch photoresist patterns using double patterning technique |
US7138329B2 (en) | 2002-11-15 | 2006-11-21 | United Microelectronics Corporation | Air gap for tungsten/aluminum plug applications |
US20070003841A1 (en) | 2005-06-29 | 2007-01-04 | Hynix Semiconductor Inc. | Double exposure method and photomask for same |
US20070020565A1 (en) | 2005-07-25 | 2007-01-25 | Samsung Electronics Co., Ltd. | Methods of fabricating a semiconductor device |
US20070054198A1 (en) | 2005-09-03 | 2007-03-08 | Hynix Semiconductor Inc. | Photomask for double exposure and double exposure method using the same |
US20070148968A1 (en) | 2005-12-26 | 2007-06-28 | Samsung Electronics Co., Ltd. | Method of forming self-aligned double pattern |
US20070212649A1 (en) | 2006-03-07 | 2007-09-13 | Asml Netherlands B.V. | Method and system for enhanced lithographic patterning |
US20070248899A1 (en) | 2006-04-21 | 2007-10-25 | Hynix Semiconductor Inc. | Pattern decomposition and optical proximity correction method for double exposure when forming photomasks |
US20070287101A1 (en) | 2006-06-08 | 2007-12-13 | Advanced Micro Devices, Inc. | Double exposure technology using high etching selectivity |
US20080150091A1 (en) | 2004-04-08 | 2008-06-26 | International Business Machines Corporation | MULTIPLE PATTERNING USING PATTERNABLE LOW-k DIELECTRIC MATERIALS |
US20080173984A1 (en) | 2007-01-24 | 2008-07-24 | International Business Machines Corporation | MECHANICALLY ROBUST METAL/LOW-k INTERCONNECTS |
US20080286467A1 (en) | 2007-05-18 | 2008-11-20 | Allen Robert D | Method of use for photopatternable dielectric materials for beol applications |
US20090079076A1 (en) | 2007-09-20 | 2009-03-26 | International Business Machines Corporation | Patternable dielectric film structure with improved lithography and method of fabricating same |
US20090079075A1 (en) | 2007-09-20 | 2009-03-26 | International Business Machines Corporation | Interconnect structures with patternable low-k dielectrics and method of fabricating same |
US20090081418A1 (en) | 2007-09-20 | 2009-03-26 | International Business Machines Corporation | Spin-on antireflective coating for integration of patternable dielectric materials and interconnect structures |
US20090174067A1 (en) | 2008-01-09 | 2009-07-09 | International Business Machines Corporation | Airgap-containing interconnect structure with patternable low-k material and method of fabricating |
US20090233226A1 (en) | 2008-03-13 | 2009-09-17 | International Business Machines Corporation | Photopatternable dielectric materials for beol applications and methods for use |
US20090291389A1 (en) | 2008-05-23 | 2009-11-26 | International Business Machines Corporation | Photopatternable dielectric materials for beol applications and methods for use |
US20110074044A1 (en) | 2009-09-29 | 2011-03-31 | International Business Machines Corporation | Patternable low-k dielectric interconnect structure with a graded cap layer and method of fabrication |
-
2009
- 2009-08-24 US US12/546,235 patent/US8163658B2/en not_active Expired - Fee Related
-
2012
- 2012-02-28 US US13/407,141 patent/US8487411B2/en not_active Expired - Fee Related
Patent Citations (55)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4371605A (en) | 1980-12-09 | 1983-02-01 | E. I. Du Pont De Nemours And Company | Photopolymerizable compositions containing N-hydroxyamide and N-hydroxyimide sulfonates |
CA1204547A (en) | 1981-02-13 | 1986-05-13 | Rudolf Kirchmayr | Curable composition based on an acid-curable resin, and process for curing this resin |
JPH01293339A (en) | 1988-05-23 | 1989-11-27 | Tosoh Corp | Photoresist composition |
US5886102A (en) | 1996-06-11 | 1999-03-23 | Shipley Company, L.L.C. | Antireflective coating compositions |
US5939236A (en) | 1997-02-07 | 1999-08-17 | Shipley Company, L.L.C. | Antireflective coating compositions comprising photoacid generators |
US6492732B2 (en) | 1997-07-28 | 2002-12-10 | United Microelectronics Corp. | Interconnect structure with air gap compatible with unlanded vias |
US20010016412A1 (en) | 1997-07-28 | 2001-08-23 | Ellis Lee | Interconnect structure with air gap compatible with unlanded vias |
US6492256B2 (en) | 1997-07-28 | 2002-12-10 | United Microelectronics Corp. | Method for forming an interconnect structure with air gap compatible with unlanded vias |
US20020163082A1 (en) | 1997-07-28 | 2002-11-07 | Ellis Lee | Method for forming an interconnect structure with air gap compatible with unlanded vias |
US6025260A (en) | 1998-02-05 | 2000-02-15 | Integrated Device Technology, Inc. | Method for fabricating air gap with borderless contact |
US6514667B2 (en) | 1998-06-29 | 2003-02-04 | International Business Machines Corporation | Tunable vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and applications thereof |
US6087064A (en) | 1998-09-03 | 2000-07-11 | International Business Machines Corporation | Silsesquioxane polymers, method of synthesis, photoresist composition, and multilayer lithographic method |
US6214719B1 (en) | 1999-09-30 | 2001-04-10 | Novellus Systems, Inc. | Method of implementing air-gap technology for low capacitance ILD in the damascene scheme |
US7091611B2 (en) | 2000-05-31 | 2006-08-15 | Micron Technology, Inc. | Multilevel copper interconnects with low-k dielectrics and air gaps |
US6455416B1 (en) | 2000-10-24 | 2002-09-24 | Advanced Micro Devices, Inc. | Developer soluble dyed BARC for dual damascene process |
US20040151489A1 (en) | 2001-03-16 | 2004-08-05 | Xianfeng Zhou | Imaging system for producing double exposure composite images and application thereof |
US6566019B2 (en) | 2001-04-03 | 2003-05-20 | Numerical Technologies, Inc. | Using double exposure effects during phase shifting to control line end shortening |
US20030073028A1 (en) | 2001-08-30 | 2003-04-17 | Clean Creative Co. Ltd. | Organic polymers for bottom antireflective coating, process for preparing the same, and compositions containing the same |
US6787469B2 (en) | 2001-12-28 | 2004-09-07 | Texas Instruments Incorporated | Double pattern and etch of poly with hard mask |
US20030129531A1 (en) | 2002-01-09 | 2003-07-10 | Oberlander Joseph E. | Positive-working photoimageable bottom antireflective coating |
US6861367B2 (en) | 2002-02-08 | 2005-03-01 | Micron Technology, Inc. | Semiconductor processing method using photoresist and an antireflective coating |
US20030198877A1 (en) | 2002-04-16 | 2003-10-23 | International Business Machines Corporation | Antireflective SiO-containing compositions for hardmask layer |
US6780753B2 (en) | 2002-05-31 | 2004-08-24 | Applied Materials Inc. | Airgap for semiconductor devices |
US6861180B2 (en) | 2002-09-10 | 2005-03-01 | Taiwan Semiconductor Manufacturing Co., Ltd | Contact printing as second exposure of double exposure attenuated phase shift mask process |
US20040048194A1 (en) | 2002-09-11 | 2004-03-11 | International Business Machines Corporation | Mehod for forming a tunable deep-ultraviolet dielectric antireflection layer for image transfer processing |
US6805109B2 (en) | 2002-09-18 | 2004-10-19 | Thomas L. Cowan | Igniter circuit with an air gap |
US20050263896A1 (en) | 2002-11-15 | 2005-12-01 | Water Lur | Air gap formation method for reducing undesired capacitive coupling between interconnects in an integrated circuit device |
US20040094821A1 (en) | 2002-11-15 | 2004-05-20 | Water Lur | Air gap for dual damascene applications |
US7253095B2 (en) | 2002-11-15 | 2007-08-07 | United Microelectronics Corporation | Air gap formation method for reducing undesired capacitive coupling between interconnects in an integrated circuit device |
US7138329B2 (en) | 2002-11-15 | 2006-11-21 | United Microelectronics Corporation | Air gap for tungsten/aluminum plug applications |
US7041748B2 (en) | 2003-01-08 | 2006-05-09 | International Business Machines Corporation | Patternable low dielectric constant materials and their use in ULSI interconnection |
US7306853B2 (en) | 2003-01-08 | 2007-12-11 | International Business Machines Corporation | Patternable low dielectric constant materials and their use in ULSI interconnection |
US7071532B2 (en) | 2003-09-30 | 2006-07-04 | International Business Machines Corporation | Adjustable self-aligned air gap dielectric for low capacitance wiring |
US7056840B2 (en) | 2003-09-30 | 2006-06-06 | International Business Machines Corp. | Direct photo-patterning of nanoporous organosilicates, and method of use |
US20050093158A1 (en) | 2003-10-30 | 2005-05-05 | Chartered Semiconductor Manufacturing Ltd. | Self-patterning of photo-active dielectric materials for interconnect isolation |
US7064078B2 (en) | 2004-01-30 | 2006-06-20 | Applied Materials | Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme |
US20080150091A1 (en) | 2004-04-08 | 2008-06-26 | International Business Machines Corporation | MULTIPLE PATTERNING USING PATTERNABLE LOW-k DIELECTRIC MATERIALS |
US20080211487A1 (en) | 2004-04-08 | 2008-09-04 | Robert Allan Faust | Apparatus, method, and computer program product for monitoring and controlling a microcomputer using a single existing pin |
US20060228895A1 (en) | 2005-04-06 | 2006-10-12 | Chae Yun-Sook | Method of forming fine pitch photoresist patterns using double patterning technique |
US20070003841A1 (en) | 2005-06-29 | 2007-01-04 | Hynix Semiconductor Inc. | Double exposure method and photomask for same |
US20070020565A1 (en) | 2005-07-25 | 2007-01-25 | Samsung Electronics Co., Ltd. | Methods of fabricating a semiconductor device |
US20070054198A1 (en) | 2005-09-03 | 2007-03-08 | Hynix Semiconductor Inc. | Photomask for double exposure and double exposure method using the same |
US20070148968A1 (en) | 2005-12-26 | 2007-06-28 | Samsung Electronics Co., Ltd. | Method of forming self-aligned double pattern |
US20070212649A1 (en) | 2006-03-07 | 2007-09-13 | Asml Netherlands B.V. | Method and system for enhanced lithographic patterning |
US20070248899A1 (en) | 2006-04-21 | 2007-10-25 | Hynix Semiconductor Inc. | Pattern decomposition and optical proximity correction method for double exposure when forming photomasks |
US20070287101A1 (en) | 2006-06-08 | 2007-12-13 | Advanced Micro Devices, Inc. | Double exposure technology using high etching selectivity |
US20080173984A1 (en) | 2007-01-24 | 2008-07-24 | International Business Machines Corporation | MECHANICALLY ROBUST METAL/LOW-k INTERCONNECTS |
US20080286467A1 (en) | 2007-05-18 | 2008-11-20 | Allen Robert D | Method of use for photopatternable dielectric materials for beol applications |
US20090079076A1 (en) | 2007-09-20 | 2009-03-26 | International Business Machines Corporation | Patternable dielectric film structure with improved lithography and method of fabricating same |
US20090079075A1 (en) | 2007-09-20 | 2009-03-26 | International Business Machines Corporation | Interconnect structures with patternable low-k dielectrics and method of fabricating same |
US20090081418A1 (en) | 2007-09-20 | 2009-03-26 | International Business Machines Corporation | Spin-on antireflective coating for integration of patternable dielectric materials and interconnect structures |
US20090174067A1 (en) | 2008-01-09 | 2009-07-09 | International Business Machines Corporation | Airgap-containing interconnect structure with patternable low-k material and method of fabricating |
US20090233226A1 (en) | 2008-03-13 | 2009-09-17 | International Business Machines Corporation | Photopatternable dielectric materials for beol applications and methods for use |
US20090291389A1 (en) | 2008-05-23 | 2009-11-26 | International Business Machines Corporation | Photopatternable dielectric materials for beol applications and methods for use |
US20110074044A1 (en) | 2009-09-29 | 2011-03-31 | International Business Machines Corporation | Patternable low-k dielectric interconnect structure with a graded cap layer and method of fabrication |
Non-Patent Citations (1)
Title |
---|
Owe-Yang, D.C., et al., "Double exposure for the contact layer of the 65-nm node", Proc. SPIE, 2005, Adv. Resist Technology and Processing, vol. 5753, pp. 171-180. |
Also Published As
Publication number | Publication date |
---|---|
US20110042790A1 (en) | 2011-02-24 |
US8163658B2 (en) | 2012-04-24 |
US20120161296A1 (en) | 2012-06-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7666794B2 (en) | Multiple patterning using patternable low-k dielectric materials | |
US8487411B2 (en) | Multiple patterning using improved patternable low-κ dielectric materials | |
US8202783B2 (en) | Patternable low-k dielectric interconnect structure with a graded cap layer and method of fabrication | |
US8659115B2 (en) | Airgap-containing interconnect structure with improved patternable low-K material and method of fabricating | |
US7709370B2 (en) | Spin-on antireflective coating for integration of patternable dielectric materials and interconnect structures | |
US8952539B2 (en) | Methods for fabrication of an air gap-containing interconnect structure | |
US8241992B2 (en) | Method for air gap interconnect integration using photo-patternable low k material | |
US8637395B2 (en) | Methods for photo-patternable low-k (PPLK) integration with curing after pattern transfer | |
US8896120B2 (en) | Structures and methods for air gap integration | |
US8334203B2 (en) | Interconnect structure and method of fabricating | |
US8618663B2 (en) | Patternable dielectric film structure with improved lithography and method of fabricating same | |
US8232198B2 (en) | Self-aligned permanent on-chip interconnect structure formed by pitch splitting | |
US9431295B2 (en) | Interconnect structure including a modified photoresist as a permanent interconnect dielectric and method of fabricating same | |
WO2009039523A1 (en) | Interconnect structures containing patternable low-k dielectrics and methods of fabricating same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: GLOBALFOUNDRIES U.S. 2 LLC, NEW YORK Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:INTERNATIONAL BUSINESS MACHINES CORPORATION;REEL/FRAME:036550/0001 Effective date: 20150629 |
|
AS | Assignment |
Owner name: GLOBALFOUNDRIES INC., CAYMAN ISLANDS Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:GLOBALFOUNDRIES U.S. 2 LLC;GLOBALFOUNDRIES U.S. INC.;REEL/FRAME:036779/0001 Effective date: 20150910 |
|
REMI | Maintenance fee reminder mailed | ||
LAPS | Lapse for failure to pay maintenance fees | ||
STCH | Information on status: patent discontinuation |
Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362 |
|
FP | Lapsed due to failure to pay maintenance fee |
Effective date: 20170716 |
|
AS | Assignment |
Owner name: ALSEPHINA INNOVATIONS INC., CANADA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:GLOBALFOUNDRIES INC.;REEL/FRAME:049709/0871 Effective date: 20181126 |