US8475936B2 - Organic compound and organic electroluminescence device employing the same - Google Patents
Organic compound and organic electroluminescence device employing the same Download PDFInfo
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- US8475936B2 US8475936B2 US12/859,884 US85988410A US8475936B2 US 8475936 B2 US8475936 B2 US 8475936B2 US 85988410 A US85988410 A US 85988410A US 8475936 B2 US8475936 B2 US 8475936B2
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- butyl
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- 150000002894 organic compounds Chemical class 0.000 title claims abstract description 29
- 238000005401 electroluminescence Methods 0.000 title claims abstract description 18
- 125000003118 aryl group Chemical group 0.000 claims abstract description 14
- 125000001072 heteroaryl group Chemical group 0.000 claims abstract description 14
- 125000000592 heterocycloalkyl group Chemical group 0.000 claims abstract description 14
- 125000000753 cycloalkyl group Chemical group 0.000 claims abstract description 13
- 125000004209 (C1-C8) alkyl group Chemical group 0.000 claims abstract description 11
- 125000006648 (C1-C8) haloalkyl group Chemical group 0.000 claims abstract description 7
- 125000003545 alkoxy group Chemical group 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 19
- 125000005428 anthryl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C3C(*)=C([H])C([H])=C([H])C3=C([H])C2=C1[H] 0.000 claims description 8
- 125000006267 biphenyl group Chemical group 0.000 claims description 8
- 125000002541 furyl group Chemical group 0.000 claims description 8
- 125000002883 imidazolyl group Chemical group 0.000 claims description 8
- 125000001041 indolyl group Chemical group 0.000 claims description 8
- 125000001624 naphthyl group Chemical group 0.000 claims description 8
- 125000001792 phenanthrenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3C=CC12)* 0.000 claims description 8
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 8
- 125000004076 pyridyl group Chemical group 0.000 claims description 8
- 125000000714 pyrimidinyl group Chemical group 0.000 claims description 8
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 claims description 8
- 125000000335 thiazolyl group Chemical group 0.000 claims description 8
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 7
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 7
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 7
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 7
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 7
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 7
- 239000002019 doping agent Substances 0.000 claims description 6
- 125000004106 butoxy group Chemical group [*]OC([H])([H])C([H])([H])C(C([H])([H])[H])([H])[H] 0.000 claims description 4
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 claims description 4
- 125000002510 isobutoxy group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])O* 0.000 claims description 4
- 125000003253 isopropoxy group Chemical group [H]C([H])([H])C([H])(O*)C([H])([H])[H] 0.000 claims description 4
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 claims description 4
- 125000002572 propoxy group Chemical group [*]OC([H])([H])C(C([H])([H])[H])([H])[H] 0.000 claims description 4
- -1 C1-8 alkosy gorup Chemical group 0.000 claims 2
- 239000000126 substance Substances 0.000 abstract description 2
- 150000001875 compounds Chemical class 0.000 description 41
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 32
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 30
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 28
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 28
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 28
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 22
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 21
- GEQBRULPNIVQPP-UHFFFAOYSA-N 2-[3,5-bis(1-phenylbenzimidazol-2-yl)phenyl]-1-phenylbenzimidazole Chemical compound C1=CC=CC=C1N1C2=CC=CC=C2N=C1C1=CC(C=2N(C3=CC=CC=C3N=2)C=2C=CC=CC=2)=CC(C=2N(C3=CC=CC=C3N=2)C=2C=CC=CC=2)=C1 GEQBRULPNIVQPP-UHFFFAOYSA-N 0.000 description 18
- AWXGSYPUMWKTBR-UHFFFAOYSA-N 4-carbazol-9-yl-n,n-bis(4-carbazol-9-ylphenyl)aniline Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(N(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 AWXGSYPUMWKTBR-UHFFFAOYSA-N 0.000 description 18
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 18
- 101000837344 Homo sapiens T-cell leukemia translocation-altered gene protein Proteins 0.000 description 18
- 102100028692 T-cell leukemia translocation-altered gene protein Human genes 0.000 description 18
- 230000000052 comparative effect Effects 0.000 description 17
- 229910052757 nitrogen Inorganic materials 0.000 description 17
- 239000000758 substrate Substances 0.000 description 17
- VQGHOUODWALEFC-UHFFFAOYSA-N 2-phenylpyridine Chemical compound C1=CC=CC=C1C1=CC=CC=N1 VQGHOUODWALEFC-UHFFFAOYSA-N 0.000 description 15
- 239000011521 glass Substances 0.000 description 15
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 15
- 0 *C.C1=CC=C2C(=C1)C1=CC3=C(C=C1C21C2=C(C=CC=C2)CC2=C1C=CC=C2)C1=C(C=CC=C1)C31C2=C(C=CC=C2)CC2=C1C=CC=C2.[1*]C.[2*]C.[4*]C.[5*]C.[6*]C.[7*]C Chemical compound *C.C1=CC=C2C(=C1)C1=CC3=C(C=C1C21C2=C(C=CC=C2)CC2=C1C=CC=C2)C1=C(C=CC=C1)C31C2=C(C=CC=C2)CC2=C1C=CC=C2.[1*]C.[2*]C.[4*]C.[5*]C.[6*]C.[7*]C 0.000 description 14
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 14
- 238000013019 agitation Methods 0.000 description 14
- 239000012459 cleaning agent Substances 0.000 description 14
- 238000001035 drying Methods 0.000 description 14
- 230000003287 optical effect Effects 0.000 description 14
- 238000011160 research Methods 0.000 description 14
- 239000010410 layer Substances 0.000 description 13
- 238000010992 reflux Methods 0.000 description 12
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 11
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 11
- 235000019341 magnesium sulphate Nutrition 0.000 description 11
- 239000012044 organic layer Substances 0.000 description 11
- 238000005160 1H NMR spectroscopy Methods 0.000 description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 10
- HEDRZPFGACZZDS-MICDWDOJSA-N Trichloro(2H)methane Chemical compound [2H]C(Cl)(Cl)Cl HEDRZPFGACZZDS-MICDWDOJSA-N 0.000 description 10
- FJXNABNMUQXOHX-UHFFFAOYSA-N 4-(9h-carbazol-1-yl)-n,n-bis[4-(9h-carbazol-1-yl)phenyl]aniline Chemical compound C12=CC=CC=C2NC2=C1C=CC=C2C(C=C1)=CC=C1N(C=1C=CC(=CC=1)C=1C=2NC3=CC=CC=C3C=2C=CC=1)C(C=C1)=CC=C1C1=C2NC3=CC=CC=C3C2=CC=C1 FJXNABNMUQXOHX-UHFFFAOYSA-N 0.000 description 9
- VFUDMQLBKNMONU-UHFFFAOYSA-N 9-[4-(4-carbazol-9-ylphenyl)phenyl]carbazole Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 VFUDMQLBKNMONU-UHFFFAOYSA-N 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 9
- 230000037361 pathway Effects 0.000 description 9
- 239000007787 solid Substances 0.000 description 9
- 238000003786 synthesis reaction Methods 0.000 description 9
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 8
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 description 7
- ASXSTQHYXCIZRV-UHFFFAOYSA-N O=C1C2=CC=CC=C2C2(C3=C1C=CC=C3)C1=C(C=CC=C1)N(C1=CC=CC=C1)C1=C2C=CC=C1 Chemical compound O=C1C2=CC=CC=C2C2(C3=C1C=CC=C3)C1=C(C=CC=C1)N(C1=CC=CC=C1)C1=C2C=CC=C1 ASXSTQHYXCIZRV-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 238000003756 stirring Methods 0.000 description 6
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 5
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 238000004440 column chromatography Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- DLEDOFVPSDKWEF-UHFFFAOYSA-N lithium butane Chemical compound [Li+].CCC[CH2-] DLEDOFVPSDKWEF-UHFFFAOYSA-N 0.000 description 4
- MZRVEZGGRBJDDB-UHFFFAOYSA-N n-Butyllithium Substances [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 description 4
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 4
- 238000000746 purification Methods 0.000 description 4
- 238000001226 reprecipitation Methods 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 4
- 238000010792 warming Methods 0.000 description 4
- DHDHJYNTEFLIHY-UHFFFAOYSA-N 4,7-diphenyl-1,10-phenanthroline Chemical compound C1=CC=CC=C1C1=CC=NC2=C1C=CC1=C(C=3C=CC=CC=3)C=CN=C21 DHDHJYNTEFLIHY-UHFFFAOYSA-N 0.000 description 3
- 238000004770 highest occupied molecular orbital Methods 0.000 description 3
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- MEKOFIRRDATTAG-UHFFFAOYSA-N 2,2,5,8-tetramethyl-3,4-dihydrochromen-6-ol Chemical compound C1CC(C)(C)OC2=C1C(C)=C(O)C=C2C MEKOFIRRDATTAG-UHFFFAOYSA-N 0.000 description 2
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 2
- NJJDAOVZNWSOJU-UHFFFAOYSA-N CC(C)(C)C1=CC=C2C3=CC4=C(C=C3C3(C2=C1)C1=C(C=CC=C1)N(C1=CC=CC=C1)C1=C3C=CC=C1)C1=C(C=C(C(C)(C)C)C=C1)C41C2=C(C=CC=C2)N(C2=CC=CC=C2)C2=C1C=CC=C2 Chemical compound CC(C)(C)C1=CC=C2C3=CC4=C(C=C3C3(C2=C1)C1=C(C=CC=C1)N(C1=CC=CC=C1)C1=C3C=CC=C1)C1=C(C=C(C(C)(C)C)C=C1)C41C2=C(C=CC=C2)N(C2=CC=CC=C2)C2=C1C=CC=C2 NJJDAOVZNWSOJU-UHFFFAOYSA-N 0.000 description 2
- NFHFRUOZVGFOOS-UHFFFAOYSA-N Pd(PPh3)4 Substances [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- 241000287219 Serinus canaria Species 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 239000006184 cosolvent Substances 0.000 description 2
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910000027 potassium carbonate Inorganic materials 0.000 description 2
- 239000012286 potassium permanganate Substances 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- QENIALCDPFDFHX-UHFFFAOYSA-N 1,4-dibromo-2,5-dimethylbenzene Chemical group CC1=CC(Br)=C(C)C=C1Br QENIALCDPFDFHX-UHFFFAOYSA-N 0.000 description 1
- 125000006181 4-methyl benzyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000003352 4-tert-butyl benzyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1C([H])([H])*)C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
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- 239000007864 aqueous solution Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
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- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000000706 filtrate Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PARWUHTVGZSQPD-UHFFFAOYSA-N phenylsilane Chemical class [SiH3]C1=CC=CC=C1 PARWUHTVGZSQPD-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001690 polydopamine Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 238000006862 quantum yield reaction Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007363 ring formation reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 125000003003 spiro group Chemical group 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000005292 vacuum distillation Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D471/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00
- C07D471/02—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00 in which the condensed system contains two hetero rings
- C07D471/10—Spiro-condensed systems
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
- C09B57/00—Other synthetic dyes of known constitution
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/623—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing five rings, e.g. pentacene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/10—Triplet emission
Definitions
- the invention relates to an organic compound and organic electroluminescence device employing the same and, more particularly, to an organic compound serving as a host material and a phosphorescent organic electroluminescence device employing the same.
- Organic electroluminescent devices are self-emitting and highly luminous, with wide viewing angles, fast response speeds, and simple fabrication methods, making them an industry display of choice.
- an organic electroluminescent device is composed of a light-emission layer sandwiched between a pair of electrodes.
- the cathode injects electrons into the light-emission layer and the anode injects holes into the light-emission layer.
- the electrons recombine with the holes in the light-emission layer, excitons are formed. Recombination of the electron and the hole results in light emission.
- the exciton which results from the hole and electron recombination can have either a triplet or singlet spin state.
- Luminescence from a singlet exciton results in fluorescence light whereas luminescence from a triplet exciton results in phosphorescence light.
- the emissive efficiency of phosphorescence light is three times that of fluorescence light. Therefore, it is crucial to develop highly efficient phosphorescent material, in order to increase the emissive efficiency of the OLED.
- phosphorescent guest materials In the application of organic electroluminescent devices, phosphorescent guest materials have to be used in combination with host materials which have a matching energy gap therewith, to achieve optimal electroluminescent performance and quantum yield. Particularly, since blue and green host materials require large energy gap differences between the host and guest material for electroluminescence, the host materials used in a phosphorescent OLED should have a short conjugated system. Further, in order to keep the key characteristics of the organic compound used in OLED (i.e. thermal-stability), the host material should also have a large molecular weight, which results in chemical structure design difficulties.
- Certain organic compounds have been disclosed, using green or blue phosphorescent OLEDs, such as US Patent 2003/0205696A1 and US Patent 2007/0141391A1. Most of the disclosed organic compounds have moieties of carbazole or silyl benzene derivatives. However, the aforementioned compounds exhibit inferior thermal-stability or results in low current density of the OLED device.
- R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , and R 7 are each independently an H, C 1-8 alkyl group, C 1-8 alkoxy group, C 1-8 halo-alkyl group, aryl group, heteroaryl group, cycloalkyl group, hetero-cycloalkyl group, or cycloaliphatic group;
- R 8 and R 9 are each independent an aryl group, heteroaryl group, cycloalkyl group, hetero-cycloalkyl, or cycloaliphatic group.
- an organic electroluminescence device comprises a pair of electrodes and an electroluminescent element disposed between the pair of electrodes, wherein the electroluminescent element comprises the aforementioned organic compound.
- an organic electroluminescence device comprising an emission layer which comprises a host material and a phosphorescent dopant.
- the host material comprises the aforementioned organic compound and the emission layer emits blue or green light under a bias voltage.
- FIG. 1 shows a cross section of an organic electroluminescent device disclosed by an embodiment of the invention.
- R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , and R 7 are each independently an H, C 1-8 alkyl group, C 1-8 alkoxy group, C 1-8 halo-alkyl group, aryl group, heteroaryl group, cycloalkyl group, hetero-cycloalkyl group, or cycloaliphatic group, such as methyl group, ethyl group, propyl group, isopropyl group, butyl group, tert-butyl group, methoxy group, ethoxy group, propoxy group, isopropoxy group, butoxy group, isobutoxy group, phenyl group, biphenyl group, pyridyl group, furyl group, naphthyl group, anthryl group, phenanthrenyl group, imidazolyl group, pyrimidinyl group, quinolinyl group, indolyl group, or thiazolyl group.
- R 8 and R 9 are each independent an aryl group, heteroaryl group, cycloalkyl group, hetero-cycloalkyl, or cycloaliphatic group.
- R 8 and R 9 are each independently a substituted or unsubstituted phenyl group, biphenyl group, pyridyl group, furyl group, naphthyl group, anthryl group, phenanthrenyl group, imidazolyl group, pyrimidinyl group, quinolinyl group, indolyl group, or thiazolyl group.
- the synthesis pathway was as follows:
- the synthesis pathway was as follows:
- compound (4) (3.74 g, 10.0 mmol) and concentrated hydrochloric acid (30 ml) were added into a bottle, and heated to reflux. After refluxing for 3 hrs and then cooling to room temperature, the result was extracted by methylene dichloride, and then the organic layer was washed by a saline solution, dehydrated by magnesium sulfate, filtered and dried. After reprecipitation with methylene dichloride and n-hexane, a reddish solid as shown as compound (5) was obtained with a yield of 20%.
- compound (6) (3.24 g, 10.0 mmol) was added into a bottle, and then filled and exhausted with nitrogen gas (three times).
- tetrahydrofuran (20 ml) was added into the bottle and cooled down to ⁇ 78° C.
- n-BuLi (12.0 mmol, 0.77 g, 7.5 ml (1.6M in hexane)) was slowly added into the bottle.
- compound (5) (5.0 mmole, 1.41 g) was added into the bottle at ⁇ 78° C. After slowly warming to room temperature, the mixture was stirred to react at room temperature for 2 hrs.
- the synthesis pathway was as follows:
- the synthesis pathway was as follows:
- the synthesis pathway was as follows:
- compound (6) (3.24 g, 10.0 mmol) was added into a bottle, and then filled and exhausted with nitrogen gas (three times).
- tetrahydrofuran (20 ml) was added into the bottle and cooled down to ⁇ 78° C.
- n-BuLi (12.0 mmol, 0.77 g, 7.5 ml 1.6M in hexane)
- compound (9) (5.0 mmole, 1.97 g) was added into the bottle at ⁇ 78° C. After slowly warming to room temperature, the mixture was stirred to react at room temperature for 2 hrs.
- the synthesis pathway was as follows:
- TG glass transition temperature
- HOMO highest occupied molecular orbital
- LUMO lowest unoccupied molecular orbital
- FIG. 1 shows an embodiment of an organic electroluminescent device 10 .
- the electroluminescent device 100 comprises a substrate 12 , a bottom electrode 14 , an electroluminescent element 16 , and a top electrode 18 , as shown in FIG. 1 .
- the organic electroluminescent device can be top-emission, bottom-emission, or dual-emission devices.
- the substrate 12 can be a glass plastic, or semiconductor substrate.
- Suitable material for the bottom and top electrodes can be Ca, Ag, Mg, Al, Li, In, Au, Ni, W, Pt, Cu, indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), or zinc oxide (ZnO), formed by sputtering, electron beam evaporation, thermal evaporation, or chemical vapor deposition. Further, al least one of the bottom and top electrodes 14 and 18 is transparent.
- the electroluminescent element 16 at least comprises an emission layer, and can further comprise a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer.
- at least one layer of the electroluminescent element 16 comprises the aforementioned organic compound.
- the organic electroluminescent device can be a phosphorescent organic electroluminescent device, and the phosphorescent organic electroluminescent device can comprise an emission layer comprising a host material and a phosphorescent dopant, wherein the host material comprises the aforementioned organic compounds.
- a glass substrate with an indium tin oxide (ITO) film of 120 nm was provided and then washed with a cleaning agent, acetone, and isopropanol with ultrasonic agitation. After drying with a nitrogen flow, the ITO film was subjected to a UV/ozone treatment.
- ITO indium tin oxide
- NPB N,N′-di(naphthalene-1-yl)-N,N′-diphenyl-benzidine, with a thickness of 30 nm
- Ds2 doped with Firpic Iridium-bis(4,6difluorophenyl-pyridinato-N,C 2 )-picolinate
- the ratio between Ds2 and Firpic was 100:6, with a thickness of 30 nm
- BCP (2,9-dimethyl-4,7diphenyl-1,10-phenanthroline, with a thickness of 15 nm
- Alq3 tris(8-hydroxyquinoline)aluminum, with a thickness of 30 nm
- LiF with a thickness of 1 nm
- Al with a thickness of 100 nm
- the emissive structure of the electroluminescent device ( 1 ) can be represented as:
- a glass substrate with an indium tin oxide (ITO) film of 120 nm was provided and then washed with a cleaning agent, acetone, and isopropanol with ultrasonic agitation. After drying with a nitrogen flow, the ITO film was subjected to a UV/ozone treatment.
- ITO indium tin oxide
- NPB N,N′-di(naphthalene-1-yl)-N,N′-diphenyl-benzidine, with a thickness of 30 nm
- mCP N,N′-dicarbazolyl-3,5-dibenzene, with a thickness of 20 nm
- Ds2 doped with Firpic Iridium-bis(4,6difluorophenyl-pyridinato-N,C 2 )-picolinate
- the ratio between Ds2 and Firpic was 100:6, with a thickness of 30 nm
- BCP (2,9-dimethyl-4,7diphenyl-1,10-phenanthroline, with a thickness of 15 nm
- Alq 3 tris(8-hydroxyquinoline)aluminum, with a thickness of 30 nm
- LiF with a thickness of 1 nm
- Al with a thickness of 100 nm
- ITO/NPB/mCP/Ds2 FIrpic(6%)/BCP/Alq 3 /LiF/Al.
- a glass substrate with an indium tin oxide (ITO) film of 120 nm was provided and then washed with a cleaning agent, acetone, and isopropanol with ultrasonic agitation. After drying with a nitrogen flow, the ITO film was subjected to a UV/ozone treatment.
- ITO indium tin oxide
- TCTA 4,4′,4′′-tri(N-carbazolyl)triphenylamine, with a thickness of 30 nm
- mCP N,N′-dicarbazolyl-3,5-dibenzene, with a thickness of 20 nm
- Ds2 doped with Firpic Iridium-bis(4,6difluorophenyl-pyridinato-N,C 2 )-picolinate
- the ratio between Ds2 and Firpic was 100:6, with a thickness of 30 nm
- BCP (2,9-dimethyl-4,7diphenyl-1,10-phenanthroline, with a thickness of 15 nm
- Alq 3 tris(8-hydroxyquinoline)aluminum, with a thickness of 30 nm
- LiF with a thickness of 1 nm
- Al with a thickness of 100 nm
- a glass substrate with an indium tin oxide (ITO) film of 120 nm was provided and then washed with a cleaning agent, acetone, and isopropanol with ultrasonic agitation. After drying with a nitrogen flow, the ITO film was subjected to a UV/ozone treatment.
- ITO indium tin oxide
- NPB N,N′-di(naphthalene-1-yl)-N,N′-diphenyl-benzidine, with a thickness of 30 nm
- mCP N,N′-dicarbazolyl-3,5-dibenzene, with a thickness of 20 nm
- Ds2 doped with Firpic Iridium-bis(4,6difluorophenyl-pyridinato-N,C 2 )-picolinate
- TPBI 1,3,5-tris(phenyl-2-benzimidazolyl)-benzene, with a thickness of 20 nm
- LiF with a thickness of 1 nm
- Al with a thickness of 100 nm
- ITO indium tin oxide
- TCTA 4,4′,4′′-tri(N-carbazolyl)triphenylamine, with a thickness of 30 nm
- DAT represented by a structure of
- Firpic Iridium-bis(4,6difluorophenyl-pyridinato-N,C 2 )-picolinate
- the ratio between DAT and Firpic was 100:6, with a thickness of 30 nm
- TPBI 1,3,5-tris(phenyl-2-benzimidazolyl)-benzene, with a thickness of 30 nm
- LiF with a thickness of 1 nm
- Al with a thickness of 100 nm
- the emissive structure of the electroluminescent device ( 5 ) can be represented as:
- ITO/TCTA/DAT Firpic(6%)/TPBI/LiF/Al
- ITO indium tin oxide
- TCTA 4,4′,4′′-tri(N-carbazolyl)triphenylamine, with a thickness of 30 nm
- DAT represented by a structure of
- Firpic Iridium-bis(4,6difluorophenyl-pyridinato-N,C 2 )-picolinate
- the ratio between DAT and Firpic was 100:6, with a thickness of 30 nm
- BCP (2,9-dimethyl-4,7diphenyl-1,10-phenanthroline, with a thickness of 30 nm)
- Alq3 tris(8-hydroxyquinoline)aluminum, with a thickness of 30 nm
- LiF with a thickness of 1 nm
- Al with a thickness of 100 nm
- the emissive structure of the electroluminescent device ( 6 ) can be represented as:
- ITO/TCTA/DAT FIrpic(6%)/BCP/Alq 3 /LiF/Al
- ITO indium tin oxide
- TCTA 4,4′,4′′-tri(N-carbazolyl)triphenylamine, with a thickness of 30 nm
- DAT represented by a structure of
- Firpic Iridium-bis(4,6difluorophenyl-pyridinato-N,C 2 )-picolinate
- the ratio between DAT and Firpic was 100:6, with a thickness of 30 nm
- BPhen 4,7-diphenyl-1,10-phenanthroline, with a thickness of 30 nm
- LiF with a thickness of 1 nm
- Al with a thickness of 100 nm
- the emissive structure of the electroluminescent device ( 7 ) can be represented as:
- ITO/TCTA/DAT Flrpic(6%)/BPhen/LiF/Al
- ITO indium tin oxide
- TCTA 4,4′,4′′-tri(N-carbazolyl)triphenylamine, with a thickness of 30 nm
- DAT represented by a structure of
- Firpic Iridium-bis(4,6difluorophenyl-pyridinato-N,C 2 )-picolinate
- the ratio between DAT and Firpic was 100:9, with a thickness of 30 nm
- TPBI 1,3,5-tris(phenyl-2-benzimidazolyl)-benzene, with a thickness of 30 nm
- LiF with a thickness of 1 nm
- Al with a thickness of 100 nm
- the emissive structure of the electroluminescent device ( 8 ) can be represented as:
- a glass substrate with an indium tin oxide (ITO) film of 120 nm was provided and then washed with a cleaning agent, acetone, and isopropanol with ultrasonic agitation. After drying with a nitrogen flow, the ITO film was subjected to a UV/ozone treatment.
- ITO indium tin oxide
- TCTA 4,4′,4′′-tri(N-carbazolyl)triphenylamine, with a thickness of 30 nm
- CBP 4,4′-N,N′-dicarbazole-biphenyl
- Firpic Iridium-bis(4,6difluorophenyl-pyridinato-N,C 2 )-picolinate
- the ratio between CBP and Firpic was 100:6, with a thickness of 30 nm
- TPBI 1,3,5-tris(phenyl-2-benzimidazolyl)-benzene, with a thickness of 30 nm
- LiF with a thickness of 1 nm
- Al with a thickness of 100 nm
- the emissive structure of the electroluminescent device ( 9 ) can be represented as:
- ITO/TCTA/CBP FIrpic (6%)/TPBI/LiF/Al
- the organic compound Ds2 of the invention showed superior efficiency and brightness in comparison with the conventional organic host material CBP or DAT.
- a glass substrate with an indium tin oxide (ITO) film of 120 nm was provided and then washed with a cleaning agent, acetone, and isopropanol with ultrasonic agitation. After drying with a nitrogen flow, the ITO film was subjected to a UV/ozone treatment.
- ITO indium tin oxide
- NPB N,N′-di(naphthalene-1-yl)-N,N′-diphenyl-benzidine, with a thickness of 30 nm
- Ds2 doped with Ir(ppy) 3 the ratio between Ds2 and Ir(ppy) 3 was 100:6, with a thickness of 30 nm
- BCP (2,9-dimethyl-4,7diphenyl-1,10-phenanthroline, with a thickness of 10 nm
- Alq3 tris(8-hydroxyquinoline)aluminum, with a thickness of 40 nm
- LiF with a thickness of 1 nm
- Al with a thickness of 100 nm
- the emissive structure of the electroluminescent device ( 10 ) can be represented as:
- a glass substrate with an indium tin oxide (ITO) film of 120 nm was provided and then washed with a cleaning agent, acetone, and isopropanol with ultrasonic agitation. After drying with a nitrogen flow, the ITO film was subjected to a UV/ozone treatment.
- ITO indium tin oxide
- NPB N,N′-di(naphthalene-1-yl)-N,N′-diphenyl-benzidine, with a thickness of 30 nm
- Ds2 doped with Ir(ppy) 3 the ratio between Ds2 and Ir(ppy) 3 was 100:6, with a thickness of 30 nm
- TPBI 1,3,5-tris(phenyl-2-benzimidazolyl)-benzene, with a thickness of 30 nm
- LiF with a thickness of 1 nm
- Al Al (with a thickness of 100 nm) were subsequently formed on the ITO film at 10 ⁇ 5 Pa, obtaining the electroluminescent device ( 11 ).
- the emissive structure of the electroluminescent device ( 11 ) can be represented as:
- ITO/NPB/D s2 Ir(ppy) 3 (6%)/TPBI/LiF/Al
- the optical property of the electroluminescent device ( 11 ), as described in Example 10 was measured by a PR650 (purchased from Photo Research Inc.) and a Minolta TS110. The result is shown in Table 4.
- ITO indium tin oxide
- TCTA 4,4′,4′′-tri(N-carbazolyl)triphenylamine, with a thickness of 30 nm
- DAT represented by a structure of
- the emissive structure of the electroluminescent device ( 12 ) can be represented as:
- ITO indium tin oxide
- TCTA 4,4′,4′′-tri(N-carbazolyl)triphenylamine, with a thickness of 30 nm
- DAT represented by a structure of
- the emissive structure of the electroluminescent device ( 13 ) can be represented as:
- ITO/TCTA/DAT Ir(ppy) 3 (9%)/BCP/Alq 3 /LiF/Al
- a glass substrate with an indium tin oxide (ITO) film of 120 nm was provided and then washed with a cleaning agent, acetone, and isopropanol with ultrasonic agitation. After drying with a nitrogen flow, the ITO film was subjected to a UV/ozone treatment.
- ITO indium tin oxide
- TCTA 4,4′,4′′-tri(N-carbazolyl)triphenylamine, with a thickness of 30 nm
- CBP 4,4′-N,N′-dicarbazole-biphenyl
- Ir(ppy) 3 the ratio between DAT and Ir(ppy) 3 was 100:6
- BCP 2,9-dimethyl-4,7diphenyl-1,10-phenanthroline, with a thickness of 30 nm
- Alq3 tris(8-hydroxyquinoline)aluminum, with a thickness of 30 nm
- LiF with a thickness of 1 nm
- Al with a thickness of 100 nm
- the emissive structure of the electroluminescent device ( 14 ) can be represented as:
- ITO/TCTA/CBP Ir(ppy) 3 (6%)/BCP/Alq 3 /LiF/Al
- the organic compound Ds2 of the invention showed superior efficiency and brightness in comparison with the conventional organic host material CBP or DAT.
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Abstract
-
- wherein: R1, R2, R3, R4, R5, R6, and R7 are each independently an H, C1-8 alkyl group, C1-8 alkoxy group, C1-8 halo-alkyl group, aryl group, heteroaryl group, cycloalkyl group, hetero-cycloalkyl group, or cycloaliphatic group; Z is independently
Description
wherein R8 and R9 are each independent an aryl group, heteroaryl group, cycloalkyl group, hetero-cycloalkyl, or cycloaliphatic group. For example, R8 and R9 are each independently a substituted or unsubstituted phenyl group, biphenyl group, pyridyl group, furyl group, naphthyl group, anthryl group, phenanthrenyl group, imidazolyl group, pyrimidinyl group, quinolinyl group, indolyl group, or thiazolyl group.
| TABLE 2 | ||||||
| LUMO | HOMO | Tg | Tm | Eg | tEg | |
| Compound | (eV) | (eV) | (° C.) | (° C.) | (eV) | (eV) |
| Ds1 | 5.8 | 2.4 | — | 427 | 3.4 | 2.9 |
| DS2 | 5.7 | 2.4 | 167 | 430 | 3.3 | 2.9 |
doped with Firpic (Iridium-bis(4,6difluorophenyl-pyridinato-N,C2)-picolinate) (the ratio between DAT and Firpic was 100:6, with a thickness of 30 nm), TPBI (1,3,5-tris(phenyl-2-benzimidazolyl)-benzene, with a thickness of 30 nm), LiF (with a thickness of 1 nm), and Al (with a thickness of 100 nm) were subsequently formed on the ITO film at 10−5 Pa, obtaining the electroluminescent device (5). The emissive structure of the electroluminescent device (5) can be represented as:
doped with Firpic (Iridium-bis(4,6difluorophenyl-pyridinato-N,C2)-picolinate) (the ratio between DAT and Firpic was 100:6, with a thickness of 30 nm), BCP (2,9-dimethyl-4,7diphenyl-1,10-phenanthroline, with a thickness of 30 nm), Alq3 (tris(8-hydroxyquinoline)aluminum, with a thickness of 30 nm), LiF (with a thickness of 1 nm), and Al (with a thickness of 100 nm) were subsequently formed on the ITO film at 10−5 Pa, obtaining the electroluminescent device (6). The emissive structure of the electroluminescent device (6) can be represented as:
doped with Firpic (Iridium-bis(4,6difluorophenyl-pyridinato-N,C2)-picolinate) (the ratio between DAT and Firpic was 100:6, with a thickness of 30 nm), BPhen (4,7-diphenyl-1,10-phenanthroline, with a thickness of 30 nm), LiF (with a thickness of 1 nm), and Al (with a thickness of 100 nm) were subsequently formed on the ITO film at 10−5 Pa, obtaining the electroluminescent device (7). The emissive structure of the electroluminescent device (7) can be represented as:
doped with Firpic (Iridium-bis(4,6difluorophenyl-pyridinato-N,C2)-picolinate) (the ratio between DAT and Firpic was 100:9, with a thickness of 30 nm), TPBI (1,3,5-tris(phenyl-2-benzimidazolyl)-benzene, with a thickness of 30 nm), LiF (with a thickness of 1 nm), and Al (with a thickness of 100 nm) were subsequently formed on the ITO film at 10−5 Pa, obtaining the electroluminescent device (8). The emissive structure of the electroluminescent device (8) can be represented as:
| TABLE 3 | ||||
| brightness | power efficiency | current efficiency | ||
| No. | (cd/m2) | (lm/W) | (cd/A) | CIE |
| electroluminescent device | 37000 | 4.5 | 17.2 | (0.14, 0.31) |
| (1) | (under 13.5 V) | (under 5.0 V) | (under 5.0 V) | |
| electroluminescent device | 46000 | 6.3 | 21.9 | (0.13, 0.28) |
| (2) | (under 12.5 V) | (under 5.5 V) | (under 5.5 V) | |
| electroluminescent device | 29000 | 4.0 | 13.8 | (0.15, 0.33) |
| (3) | (under 13 V) | (under 4.5 V) | (under 4.5 V) | |
| electroluminescent device | 17000 | 3.1 | 10.8 | (0.13, 0.29) |
| (4) | (under 12.5 V) | (under 6.0 V) | (under 5.0 V) | |
| electroluminescent device | 4644 | 7.19 | 9.16 | (0.13, 0.30) |
| (5) | (under 11 V) | (under 4.0 V) | (under 4.0 V) | |
| electroluminescent device | 1733 | 5.72 | 2.57 | (0.13, 0.29) |
| (6) | (under 11 V) | (under 6.5 V) | (under 6.5 V) | |
| electroluminescent device | 6668 | 5.86 | 8.39 | (0.13, 0.30) |
| (7) | (under 10.5 V) | (under 4.5 V) | (under 4.5 V | |
| electroluminescent device | 2200 | 10.2 | 5.9 | (0.12, 0.29) |
| (8) | (under 11 V) | (under 5.5 V) | (under 5.5 V) | |
| electroluminescent device | 1532 | 3.27 | 1.6 | (0.26, 0.45) |
| (9) | (under 13 V) | (under 6.5 V) | (under 6.5 V) | |
doped with Ir(ppy)3 (the ratio between DAT and Ir(ppy)3 was 100:6, with a thickness of 30 nm), TPBI (1,3,5-tris(phenyl-2-benzimidazolyl)-benzene, with a thickness of 30 nm), LiF (with a thickness of 1 nm), and Al (with a thickness of 100 nm) were subsequently formed on the ITO film at 10−5 Pa, obtaining the electroluminescent device (12). The emissive structure of the electroluminescent device (12) can be represented as:
doped with Ir(ppy)3 (the ratio between DAT and Ir(ppy)3 was 100:9, with a thickness of 30 nm), BCP (2,9-dimethyl-4,7diphenyl-1,10-phenanthroline, with a thickness of 30 nm), Alq3 (tris(8-hydroxyquinoline)aluminum, with a thickness of 30 nm), LiF (with a thickness of 1 nm), and Al (with a thickness of 100 nm) were subsequently formed on the ITO film at 10−5 Pa, obtaining the electroluminescent device (13). The emissive structure of the electroluminescent device (13) can be represented as:
| TABLE 4 | ||||
| brightness | power efficiency | current | ||
| No. | (cd/m2) | (lm/W) | efficiency (cd/A) | CIE |
| electroluminescent | 110000 | 15.7 | 40.2 | (0.25, 0.66) |
| device (10) | (under 15 V) | (under 6 V) | (under 5.5 V) | |
| electroluminescent | 67000 | 10.7 | 25.7 | (0.25, 0.65) |
| device (11) | (under 15 V) | (under 6 V) | (under 5 V) | |
| electroluminescent | 12115 | 4.2 | 10.3 | (0.37, 0.58) |
| device (12) | (under 11.5 V) | (under 7.5 V) | (under 8 V) | |
| electroluminescent | 32837 | 5.02 | 11.2 | (0.27, 0.62) |
| device (13) | (under 10.5 V) | (under 5.5 V) | (under 7 V) | |
| electroluminescent | 15441 | 12.5 | 31.8 | (0.33, 0.60) |
| device (14) | (under 11.5 V) | (under 8 V) | (under 8 V) | |
Claims (14)
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| TW99104651A | 2010-02-12 | ||
| TW099104651 | 2010-02-12 |
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| US9954189B2 (en) | 2014-12-03 | 2018-04-24 | Industrial Technology Research Institute | Organic metal compound and organic light-emitting device employing the same |
| US10164199B2 (en) | 2014-12-03 | 2018-12-25 | Industrial Technology Research Institute | Organic metal compound and organic light-emitting device employing the same |
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| EP2733762B1 (en) * | 2011-07-15 | 2018-11-28 | Kyulux, Inc. | Organic electroluminescence element and compound used therein |
| KR101636864B1 (en) * | 2012-10-08 | 2016-07-06 | 제일모직 주식회사 | Compound for organic optoelectronic device, organic light emitting diode including the same and display including the organic light emitting diode |
| CN110023314B (en) * | 2017-05-22 | 2022-02-08 | 株式会社Lg化学 | Novel heterocyclic compounds and organic light-emitting devices using them |
| CN112707918B (en) * | 2020-12-31 | 2023-07-25 | 蚌埠学院 | A kind of preparation method of polycyclic diketone condensed ring molecule |
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| US20110198571A1 (en) | 2011-08-18 |
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