US8468683B2 - High bevel angle magnetic writer pole fabrication process - Google Patents
High bevel angle magnetic writer pole fabrication process Download PDFInfo
- Publication number
- US8468683B2 US8468683B2 US13/285,688 US201113285688A US8468683B2 US 8468683 B2 US8468683 B2 US 8468683B2 US 201113285688 A US201113285688 A US 201113285688A US 8468683 B2 US8468683 B2 US 8468683B2
- Authority
- US
- United States
- Prior art keywords
- layer
- magnetic material
- exposed
- mask
- hard mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related, expires
Links
- 238000000034 method Methods 0.000 title claims abstract description 103
- 230000008569 process Effects 0.000 title claims abstract description 76
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 230000002787 reinforcement Effects 0.000 claims abstract description 55
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000001301 oxygen Substances 0.000 claims abstract description 11
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 11
- 239000000696 magnetic material Substances 0.000 claims description 89
- 238000000151 deposition Methods 0.000 claims description 45
- 238000001020 plasma etching Methods 0.000 claims description 37
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 36
- 229910052799 carbon Inorganic materials 0.000 claims description 36
- 229920002120 photoresistant polymer Polymers 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 24
- 238000000992 sputter etching Methods 0.000 claims description 15
- 229910003460 diamond Inorganic materials 0.000 claims description 10
- 239000010432 diamond Substances 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 10
- 229920000642 polymer Polymers 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 9
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 150000002739 metals Chemical class 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 7
- 229910052786 argon Inorganic materials 0.000 claims description 6
- -1 argon ions Chemical class 0.000 claims description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 4
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims description 4
- 239000011737 fluorine Substances 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 223
- 239000000463 material Substances 0.000 description 42
- 150000002500 ions Chemical class 0.000 description 41
- 239000010408 film Substances 0.000 description 8
- 238000003801 milling Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 229910003321 CoFe Inorganic materials 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910004158 TaO Inorganic materials 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000002355 dual-layer Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/1278—Structure or manufacture of heads, e.g. inductive specially adapted for magnetisations perpendicular to the surface of the record carrier
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
- G11B5/3116—Shaping of layers, poles or gaps for improving the form of the electrical signal transduced, e.g. for shielding, contour effect, equalizing, side flux fringing, cross talk reduction between heads or between heads and information tracks
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
- Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
- Y10T29/49032—Fabricating head structure or component thereof
- Y10T29/49036—Fabricating head structure or component thereof including measuring or testing
- Y10T29/49043—Depositing magnetic layer or coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
- Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
- Y10T29/49032—Fabricating head structure or component thereof
- Y10T29/49036—Fabricating head structure or component thereof including measuring or testing
- Y10T29/49043—Depositing magnetic layer or coating
- Y10T29/49044—Plural magnetic deposition layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
- Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
- Y10T29/49032—Fabricating head structure or component thereof
- Y10T29/49036—Fabricating head structure or component thereof including measuring or testing
- Y10T29/49043—Depositing magnetic layer or coating
- Y10T29/49046—Depositing magnetic layer or coating with etching or machining of magnetic material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
- Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
- Y10T29/49032—Fabricating head structure or component thereof
- Y10T29/49048—Machining magnetic material [e.g., grinding, etching, polishing]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
- Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
- Y10T29/49032—Fabricating head structure or component thereof
- Y10T29/49048—Machining magnetic material [e.g., grinding, etching, polishing]
- Y10T29/49052—Machining magnetic material [e.g., grinding, etching, polishing] by etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
- Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
- Y10T29/49032—Fabricating head structure or component thereof
- Y10T29/49067—Specified diverse magnetic materials
Definitions
- Embodiments of the present invention generally relate to methods of making write poles for perpendicular magnetic recording write heads.
- Perpendicular magnetic recording systems are utilized in computer hard disk drives.
- a typical perpendicular recording write head includes a trailing write pole, a leading return or opposing pole magnetically coupled to the write pole, and an electrically conductive magnetizing coil around the write pole.
- the magnetic fields of bits of stored information are oriented normal to the plane of the thin film of media, and thus, perpendicular to the direction of a circular data track.
- FIGS. 3A-3D exemplify a prior art method of fabricating a narrow width write pole.
- a layer (or layers) of laminated magnetic materials 304 is deposited over a substrate 302 .
- the laminated structure is shown as a single layer 304 .
- a layer (or layers) of non-magnetic film is deposited as an ion mill hard mask 305 .
- the layers of the non-magnetic film are shown as a single layer 305 .
- a polymeric underlayer 306 is spin coated on the non-magnetic mill hard mask 305 , and a dielectric hard mask layer 308 is deposited on the polymeric underlayer.
- a photoresist mask 310 is then formed over the dielectric layer 308 .
- the dielectric layer 308 is then patterned by a first reactive ion etching (RIE) process using the photoresist mask 310 to form a dielectric hard mask 312 .
- RIE reactive ion etching
- a portion of the photoresist mask is consumed in this first RIE process.
- the polymeric underlayer 306 is then patterned by a second RIE process using the dielectric hard mask 312 to expose the layer of non-magnetic mill mask layer 305 .
- the photoresist mask is completely consumed during the second RIE process.
- the patterned polymeric underlayer 306 is then used as a mask for milling the layer of non-magnetic mill mask layer 305 and then magnetic material 304 to bevel the layer of magnetic material 304 to an angle ⁇ from the patterned polymeric underlayer 306 to the substrate 302 .
- An angle ⁇ of up to about 10 degrees can be obtained on a consistent basis with a proper mill process control.
- Angles of up to about 10 degrees are acceptable for current generation magnetic write heads. However, higher bevel angles are needed for the next and future generations of magnetic write heads.
- the present invention generally relates to methods of making magnetic write poles for perpendicular magnetic recording write heads.
- the bevel angle of the write pole for a perpendicular magnetic recording write head affects the performance of the write head.
- the bevel angle of the write pole can be increased to meet the demands of the next and future generation of magnetic recording write heads.
- a method of making a write pole of a perpendicular magnetic recording write head includes: depositing a layer of laminated magnetic materials over a substrate, followed with depositing non-magnetic mill mask layers on the magnetic materials, the magnetic material having a desired thickness and composition for the write pole; depositing a polymeric underlayer over the non-magnetic mill mask layer; depositing a dielectric hard mask layer over the polymeric underlayer; forming a photoresist mask over the dielectric hard mask layer such that the photoresist mask covers a first portion of the dielectric hard mask layer and leaves a second portion exposed; removing the exposed second portion of the dielectric hard mask layer such that a portion of the polymeric underlayer is exposed; removing the exposed polymeric underlayer to expose the non-magnetic mill mask layer.
- the subsequent ion mill process removes the exposed portions (not covered by the polymeric underlayer mask) of the layers of both non-magnetic mill mask layer and laminated magnetic pole materials such that the layers of magnetic pole material are tapered from the polymeric underlayer mask remaining to the substrate at an angle from about 10 up to about 15 degrees.
- the magnetic write pole with bevel angle lower than 10 degrees can be more easily fabricated by adjusting the ion mill process.
- a method of making a write pole of a perpendicular magnetic recording write head includes: depositing a layer of laminated magnetic pole material over a substrate, followed with depositing a non-magnetic mill mask layer on the magnetic material, the magnetic material having a desired thickness and composition for the write pole; depositing a polymeric underlayer over the non-magnetic mill mask layer; depositing a dielectric hard mask layer over the polymeric underlayer; forming a photoresist mask over the dielectric hard mask layer such that the photoresist mask covers a first portion of the dielectric hard mask layer and leaves a second portion exposed; removing the exposed second portion of the dielectric hard mask layer such that a portion of the polymeric underlayer is exposed; removing the exposed polymeric underlayer to expose the non-magnetic mill mask layer.
- the subsequent ion mill process removes the exposed portions (not covered by the polymeric underlayer mask) of the layers of both non-magnetic mill mask layer and laminated magnetic pole materials such that the layers of magnetic pole material is tapered from the polymeric underlayer mask remaining to the substrate at an angle from about 10 up to about 15 degrees.
- the magnetic write pole with bevel angle lower than 10 degrees can be more easily fabricated by adjusting the ion mill process.
- a method of making a write pole of a perpendicular magnetic recording write head includes: depositing a layer of laminated magnetic pole material over a substrate, followed with depositing non-magnetic mill mask layers on the magnetic material, the magnetic material having a desired thickness and composition for the write pole; depositing a polymeric underlayer over the non-magnetic mill mask layer; depositing a dielectric hard mask layer over the polymeric underlayer; forming a photoresist mask over the dielectric hard mask layer such that the photoresist mask covers a first portion of the dielectric hard mask layer and leaves a second portion exposed; removing the exposed second portion of the dielectric hard mask layer such that a portion of the polymeric underlayer is exposed; removing the exposed polymeric underlayer to expose the non-magnetic mill mask layer.
- a reinforcement layer is then deposited over the exposed portions of the layer of non-magnetic mill mask layer, the polymeric underlayer and the dielectric hard mask layer.
- the materials used to deposit the reinforcement layer can be DLC (diamond like carbon), carbon, PLC (polymer like carbon), alumina, silicon oxide, silicon nitride, silicon carbide, or metals and their alloys such as Ta, TaN and etc, or combinations thereof.
- the first stage ion mill process is used to mill through the portion of the reinforcement layer (not covered by the polymeric underlayer mask) on the surface of the non-magnetic mill mask layer and expose the non-magnetic mill mask layer, then the continuing ion mill remove the exposed portions of the layers of non-magnetic mill mask layer and expose the magnetic material not covered by the polymeric underlayer mask.
- the second stage ion mill process is applied to mill the laminated magnetic pole materials such that the layers of magnetic pole material is tapered from the polymeric underlayer remaining to the substrate at an angle from about 15 up to about 25 degrees.
- the magnetic write pole with bevel angle lower than 15 degrees can be more easily fabricated by adjusting the ion mill process.
- a method of making a write pole of a perpendicular magnetic recording write head includes: depositing a layer of laminated magnetic pole material over a substrate, followed with depositing non-magnetic mill mask layers on the magnetic material, the magnetic material having a desired thickness and composition for the write pole; depositing a polymeric underlayer over the non-magnetic mill mask layer; depositing a dielectric hard mask layer over the polymeric underlayer; forming a photoresist mask over the dielectric hard mask layer such that the photoresist mask covers a first portion of the dielectric hard mask layer and leaves a second portion exposed; removing the exposed second portion of the dielectric hard mask layer such that a portion of the polymeric underlayer is exposed; removing the exposed polymeric underlayer to expose the non-magnetic mill mask layer.
- a reinforcement layer is then deposited over the exposed portions of the layer of non-magnetic mill mask layer, the polymeric underlayer and the dielectric hard mask layer.
- the materials used to deposit reinforcement layer can be DLC (diamond like carbon), carbon, PLC (polymer like carbon). RIE plasma is used to remove the carbon layer on the surface of the non-magnetic mill mask layer and expose the non-magnetic mill mask layer.
- the RIE process uses the oxygen containing chemistry such as O 2 , CO 2 and etc.
- the RIE process can be tuned to selectively remove the carbon film on the top of the dielectric hard mask layer and the carbon film on the top of the surface of the non-magnetic mill mask layer to expose the non-magnetic mill mask layer but leave most of the carbon film on side wall of the polymeric underlayer mask.
- the ion mill process can be used to remove the exposed portions (not covered by the polymeric underlayer mask) of the layers of both non-magnetic mill mask layer and laminated magnetic pole materials such that the layers of magnetic pole material is tapered from the polymeric underlayer remaining to the substrate at an angle from about 15 up to about 25 degrees.
- the magnetic write pole with bevel angle lower than 15 degrees can be more easily fabricated by adjusting the ion mill process.
- a method of making a write pole of a perpendicular magnetic recording write head includes: depositing a layer of laminated magnetic pole material over a substrate, followed with depositing non-magnetic mill mask layers on the magnetic material, the magnetic material having a desired thickness and composition for the write pole; depositing a polymeric underlayer over the non-magnetic mill mask layer material; depositing a dielectric hard mask layer over the polymeric underlayer; forming a photoresist mask over the dielectric hard mask layer such that the photoresist mask covers a first portion of the dielectric hard mask layer and leaves a second portion exposed; removing the exposed second portion of the dielectric hard mask layer such that a portion of the polymeric underlayer is exposed; and removing the exposed polymeric underlayer to expose the non-magnetic mill mask layer.
- the materials used to deposit reinforcement layer can be DLC (diamond like carbon), carbon, PLC (polymer like carbon), alumina, silicon oxide, silicon nitride, silicon carbide, or metals and their alloys such as Ta, TaN and etc, or combinations thereof.
- the reinforcement layer on the non-magnetic mill mask layer can be either milled through with ion mill process or directionally etched away by a RIE process.
- the first stage ion mill process which removes both the reinforcement layer (not covered by the polymeric underlayer mask) on the surface of the non-magnetic mill mask layer and the non-magnetic mill mask layer, or which only removes the non-magnetic mill mask layer where the RIE process is employed to etch away the reinforcement layer on the non-magnetic mill mask layer, can re-deposit the milled materials on the reinforcement layer located on the side wall of the polymeric underlayer.
- the re-depositing materials on the reinforcement layer makes the reinforcement layer even thicker and stronger by properly adjusting the ion mill process during removing the exposed portions of the reinforcement layer on the surface of the non-magnetic mill mask layer and non-magnetic mill mask layer to expose the magnetic materials.
- the second stage ion mill process is applied to mill the laminated magnetic pole materials such that the layers of magnetic pole material is tapered from the polymeric underlayer remaining to the substrate at an angle from about 15 up to about 25 degrees.
- the magnetic write pole with bevel angle lower than 15 degrees can be more easily fabricated by adjusting the ion mill process.
- FIG. 1 illustrates an exemplary magnetic disk drive, according to an embodiment of the invention.
- FIG. 2A is a side view of a read/write head and magnetic disk of the disk drive of FIG. 1 , according to one embodiment of the invention.
- FIG. 2B is an enlarged top view of a portion of the read/write head of FIG. 2A , according to a further embodiment of the invention.
- FIGS. 3A-3D are schematic cross-sectional views of a prior art write pole at various stages of processing.
- FIGS. 4A-4C are schematic cross-sectional views of write poles prior to beveling the layer of magnetic material.
- FIGS. 5A-5D are schematic cross-sectional views of the write pole at various stages of production.
- the present invention generally relates to methods of making write poles for perpendicular magnetic recording write heads.
- the bevel angle of the write pole for a perpendicular magnetic recording write head affects the performance of the write head.
- the bevel angle of the magnetic write pole can be increased greatly to meet the demands of the next and future generations of magnetic recording write heads.
- FIG. 1 illustrates a top view of an exemplary hard disk drive (HDD) 100 , according to an embodiment of the invention.
- HDD 100 may include one or more magnetic disks 110 , actuator 120 , actuator arms 130 associated with each of the magnetic disks, and spindle motor 140 affixed in a chassis 150 .
- the one or more magnetic disks 110 may be arranged vertically as illustrated in FIG. 1 .
- the one or more magnetic disks may be coupled with the spindle motor 140 .
- Magnetic disks 110 may include circular tracks of data on both the top and bottom surfaces of the disk.
- An electromagnetic head 180 may be positioned on a track. As each disk spins, data may be written and/or read from the data track.
- Electromagnetic head 180 may be coupled to an actuator arm 130 as illustrated in FIG. 1 .
- Actuator arm 130 may be configured to swivel around actuator axis 131 to place electromagnetic head 180 on a particular data track.
- a plurality of magnetic disks may be stacked vertically in HDD 100 .
- Each disk may have read and write tracks on each side of the disk. Therefore, electromagnetic heads may be placed on both sides of the disk.
- a single magnetic head may be configured to access data tracks on the bottom face of a first disk and a top face of a second disk.
- Each actuator arm 130 may be coupled to actuator 120 .
- Actuator 120 may be a motor configured to control the swiveling movement of actuator arm 130 to place electromagnetic head 180 on a given data track.
- the actuator arms 130 may be connected. Therefore, all the actuator arms 130 , and consequently all the electromagnetic heads 180 may move together.
- Spindle motor 140 may be configured to rotate the magnetic disks at a predetermined rate.
- the spindle motor 140 may be configured to spin at a rate of 10,000 revolutions per minute (rpm).
- rpm revolutions per minute
- the spin rate for example may depend on the type of disk drive, the type of computer, etc.
- FIG. 2A is a fragmented, cross-sectional side view through the center of an embodiment of a read/write head 200 mounted on a slider 201 and facing magnetic disk 202 .
- the read/write head 200 and magnetic disk 202 may correspond to the electromagnetic head 180 and magnetic disk 110 , respectively in FIG. 1 .
- the magnetic disk 202 may be a “dual-layer” medium that includes a perpendicular magnetic data recording layer (RL) 204 on a “soft” or relatively low-coercivity magnetically permeable underlayer (PL) 206 formed on a disk substrate 208 .
- RL perpendicular magnetic data recording layer
- PL magnetically permeable underlayer
- the read/write head 200 includes an ABS, a magnetic write head 210 and a magnetic read head 211 , and is mounted such that its ABS is facing the magnetic disk 202 .
- the disk 202 moves past the write head 210 in the direction indicated by the arrow 232 , so the portion of slider 201 that supports the read/write head 200 is often called the slider “trailing” end 203 .
- the magnetic read head 211 is a magnetoresistive (MR) read head that includes an MR sensing element 230 located between MR shields S 1 and S 2 .
- the magnetic read head 211 is a magnetic tunneling junction (MTJ) read head that includes an MTJ sensing device 230 located between MR shields S 1 and S 2 .
- the RL 204 is illustrated with perpendicularly recorded or magnetized regions, with adjacent regions having magnetization directions, as represented by the arrows located in the RL 204 . The magnetic fields of the adjacent magnetized regions are detectable by the MR (or MTJ) sensing element 230 as the recorded bits.
- the write head 210 includes a magnetic circuit made up of a main pole 212 and a yoke 216 .
- the write head 210 also includes a thin film coil 218 shown in the section embedded in non-magnetic material 219 and wrapped around yoke 216 .
- the yoke 216 may be omitted, and the coil 218 may wrap around the main pole 212 .
- a write pole 220 is magnetically connected to the main pole 212 and has an end 226 that defines part of the ABS of the magnetic write head 210 facing the outer surface of disk 202 .
- Write pole 220 is a flared write pole and includes a flare point 222 and a pole tip 224 that includes an end 226 that defines part of the ABS.
- the width of the write pole 220 in a first direction increases from a first width at the flare point 222 to greater widths away from the ABS, as is shown in FIG. 2B .
- the flare may extend the entire height of write pole 220 (i.e., from the end 226 of the write pole 220 to the top of the write pole 220 ), or may only extend from the flare point 222 , as shown in FIG. 2A .
- the distance between the flare point 222 and the ABS is between about 30 nm and about 150 nm.
- the write pole 220 includes a tapered surface 271 which increases a width of the write pole 220 from a first width W 1 at the ABS to a second width W 2 away from the ABS.
- the width W 1 may be between around 60 nm and 200 nm
- the width W 2 may be between around 120 nm and 350 nm.
- the tapered region 271 is shown with a single straight surface in FIG. 2A , in alternative embodiment, the tapered region 271 may include a plurality of tapered surface with different taper angles with respect to the ABS. The fabrication of the tapered region 271 is discussed in greater detail below.
- the tapering improves magnetic performance. For example, reducing the width W 1 at the ABS may concentrate a magnetic field generated by the write pole 220 over desirable portions of the magnetic disk 202 . In other words, reducing the width W 1 of the write pole 220 at the ABS reduces the probability that tracks adjacent to a desirable track are erroneously altered during writing operations.
- a larger width W 2 of the write pole 220 away from the ABS may desirably increase the magnetic flux to the write pole 220 , by providing a greater thickness of the write pole 220 in a direction generally parallel to the ABS.
- write current passes through coil 218 and induces a magnetic field (shown by dashed line 228 ) from the write pole 220 that passes through the RL 204 (to magnetize the region of the RL 204 beneath the write pole 220 ), through the flux return path provided by the PL 206 , and back to an upper return pole 250 .
- the greater the magnetic flux of the write pole 220 the greater is the probability of accurately writing to desirable regions of the RL 204 .
- FIG. 2A further illustrates one embodiment of the upper return pole or magnetic shield 250 that is separated from write pole 220 by a nonmagnetic gap layer 256 .
- the magnetic shield 250 may be a trailing shield wherein substantially all of the shield material is on the trailing end 203 .
- the magnetic shield 250 may be a wrap-around shield wherein the shield covers the trailing end 203 and also wraps around the sides of the write pole 220 .
- FIG. 2A is a cross section through the center of the read/write head 200 , it represents both trailing and wrap-around embodiments.
- the nonmagnetic gap layer 256 has a reduced thickness and forms a shield gap throat 258 .
- the throat gap width is generally defined as the distance between the write pole 220 and the magnetic shield 250 at the ABS.
- the shield 250 is formed of magnetically permeable material (such as Ni, Co and Fe alloys) and gap layer 256 is formed of nonmagnetic material (such as Ta, TaO, Ru, Rh, NiCr, SiC or Al 2 O 3 ).
- a taper 260 in the gap material provides a gradual transition from the throat gap width at the ABS to a maximum gap width above the taper 260 . This gradual transition in width forms a tapered bump in the non-magnetic gap layer that allows for greater magnetic flux density from the write pole 220 , while avoiding saturation of the shield 250 .
- the taper 260 may extend either more or less than is shown in FIG. 2A .
- the taper may extend upwards to an end of shield 250 opposite the ABS (not shown), such that the maximum gap width is at the end of the shield opposite the ABS.
- the gap layer thickness increases from a first thickness (the throat gap width) at the ABS to greater thicknesses at a first distance from the ABS, to a greatest thickness at a second distance (greater than the first distance) from the ABS.
- FIG. 2B shows an enlarged top view of the write pole 220 of FIG. 2A , with the shield layer 250 and the gap layer 256 removed to show details of the write pole 220 , according to an embodiment of the invention.
- the write pole 220 includes flared sides 274 , which extend from the flare point 222 away from the ABS, such that the main pole increases from a first width T 1 to greater widths in a direction away from the ABS.
- the first width, T 1 is between 20 nm and 150 nm.
- the flared sides 274 form an angle ⁇ with respect to a plane parallel to the ABS surface. In one embodiment ⁇ is between about 30 degrees and about 60 degrees.
- the flare point 222 may be between about 30 nm and about 275 nm from the ABS.
- FIGS. 4A-4C are schematic cross-sectional views of magnetic write poles prior to beveling the layer of magnetic material 404 .
- the write poles comprise a substrate 402 having a layer of magnetic material 404 formed thereover. Suitable materials for the substrate 402 include insulating materials such as alumina.
- the layer (or layers) of magnetic material 404 that will eventually become the write pole 220 include not only a single layer of magnetic material, but laminates of high-moment magnetic material that include nickel, iron, cobalt and alloys thereof, such as CoFe or NiFe.
- the layer of magnetic material 404 may be deposited by deposition methods such as sputtering or electroplating.
- a layer (or layers) of non-magnetic material 405 is deposited such as DLC (diamond like carbon), carbon, PLC (polymer like carbon), alumina, silicon oxide, silicon nitride, silicon carbide, or metals and their alloys such as Ta, TaN and etc.
- DLC diamond like carbon
- PLC polymer like carbon
- alumina silicon oxide
- silicon nitride silicon carbide
- metals and their alloys such as Ta, TaN and etc.
- the non-magnetic layer 405 functions as part of the mill mask in addition to the polymeric underlayer mask during the ion mill process of the magnetic material 404 , and also prevents damaging or oxidizing the magnetic material 404 during the rework of the polymeric underlayer mask 406 in case that the CD (critical dimension) of the mask and other geometric parameters such as shape factors (for example, the ratio of top CD to bottom CD of the polymeric underlayer mask) are out of the production specification and the substrates are forced to a re-work loop in which plasma ash and wet strip are employed to remove the polymeric underlayer mask but have no damage to the non-magnetic mill mask layer which is not sensitive to the plasma ash and wet strip processes.
- a polymeric underlayer is deposited after the formation of the non-magnetic mill mask layer 405 .
- the suitable polymeric underlayer material that may be utilized are polymeric materials that can be cured at a relatively low temperature, such as around 150 to 250 degrees Celsius.
- the examples of such polymeric materials include SIUL (Shin-Etsu Chemical Co., Ltd.), DURIMIDE (Fujifilm Corporation), JSR HM8006 (Honeywell International Inc.), ACCUFLO T-31 (Honeywell International Inc.) or etc.
- SIUL Shin-Etsu Chemical Co., Ltd.
- DURIMIDE Flujifilm Corporation
- JSR HM8006 Honeywell International Inc.
- ACCUFLO T-31 Honeywell International Inc.
- a dielectric hard mask layer is deposited over the polymeric underlayer.
- the dielectric hard mask layer can be constructed of a dielectric material and is preferably constructed of a silicon containing materials such as silicon oxide, silicon nitride, silicon oxynitride or a silicon containing organic material such as SIHM (Shin-Etsu Chemical Co., Ltd.), UVAS (Honeywell International Inc.) and etc.
- the thickness of the dielectric hard mask layer depends on the thickness of the polymeric underlayer and the etch rate selectivity of the dielectric hard mask layer to polymeric underlayer in the second RIE process to transfer the mask pattern of the dielectric hard mask layer onto the polymeric underlayer. Generally, the thicker the under-layer, the thicker the dielectric hard mask layer will have to be.
- An optional bottom anti-reflective coating may be applied over the dielectric hard mask layer.
- the determination of whether a BARC layer is needed depends on the requirements of the photolithographic process and on the material used for the first RIE on the dielectric hard mask layer. For example, if the dielectric hard mask layer is a material that can act as a BARC, then no BARC layer is needed. Such materials for the BARC include silicon oxynitride, SIHM (Shin-Etsu Chemical Co., Ltd.), UVAS (Honeywell International Inc.). Also, no BARC is needed if the dielectric hard mask layer is sufficiently thin and the critical dimensions of the magnetic pole are large enough that the polymeric underlayer 406 can function as a BARC. However, some form of BARC is desirable to control photolithography parameters such as reflective swing and photo critical dimensions, in this case, for simplicity, the dielectric layer and BARC layer are collectively shown as one layer in the drawings and referred to as dielectric hard mask layer.
- a photoresist mask is then formed over the dielectric hard mask layer to cover a first portion of the dielectric hard mask layer and leave a second portion of the dielectric hard mask layer exposed.
- the dielectric hard mask layer is then patterned by a RIE process to form a hard mask 408 .
- the hard mask 408 is formed by performing a RIE process utilizing a fluorocarbon based chemistry that utilizes a fluorine containing gas such as CF 4 , CHF 3 or a combination of the two together with an inert gas such as argon.
- the RIE process comprises removing the exposed second portion of the dielectric hard mask layer such that a portion of the polymeric underlayer is exposed and the dielectric hard mask 408 is formed.
- the polymeric underlayer is then patterned by another RIE process.
- the polymeric underlayer mask 406 is formed by performing a RIE process utilizing an oxygen containing plasma.
- the RIE process comprises removing the exposed second portion of the polymeric underlayer such that a portion of the non-magnetic mill mask layer 405 is exposed and the polymeric underlayer mask 406 is formed.
- the polymeric underlayer mask 406 is used as a mask for milling both non-magnetic material 405 and magnetic material 404 to form the write pole 220 .
- the dimension and geometric profile of the polymeric underlayer mask 406 is thus important to control the ion milling pole formation. Flared out walls 410 or straight walls 410 for the polymeric underlayer 406 are sufficient for beveling the write pole 220 to angles of up to about 10 degrees, but in order to exceed 10 degrees consistently, tapered walls 410 are needed.
- the RIE process may lead to walls 410 of the polymeric underlayer mask 406 that flare out at adjacent the interface 412 with the layer of non-magnetic mill mask layer 405 such that footing is present.
- the polymeric underlayer mask 406 shown in FIG. 4A is not desirable because it is very hard for ion mill process to form the magnetic write pole with bevel angle over 10 with the existence of the footing and it is also too difficult to control the footing size (such as foot height, foot length, the profile of the incline side) from site to site within a wafer as well as from wafer to wafer that the final write pole 220 critical dimension (CD) and the bevel angle will not be easily controlled in desired specification.
- CD critical dimension
- the walls 410 of the polymeric underlayer mask 406 may be generally straight such that the polymeric underlayer mask 406 has a rectangular cross section profile.
- the bevel angle for the write pole 220 can be controlled well up to an angle of 10 degrees and the CD for the write pole 220 can also be controlled in specification.
- the walls 410 of the polymeric underlayer mask 406 may taper in towards the interface 412 with the layer of non-magnetic mill mask layer 405 .
- the polymeric underlayer mask 406 has a slightly trapezoid profile (i.e. greater top CD and smaller bottom CD) and is most favorable for an ion milling mask to achieve a consistent CD and profile control of the write pole 220 and to form a higher bevel angle of 10 degrees or more. It is easy to fabricate a write pole with bevel angle up to about 15 degree with the tapered polymeric underlayer mask 406 .
- the RIE process to form the tapered walls 410 comprises removing the exposed polymeric underlayer to expose the layer of non-magnetic mill mask layer 405 .
- the removing the exposed polymeric underlayer results in the polymeric underlayer that remains being tapered from the first portion of the dielectric layer (i.e., the hard mask 408 ) to the layer of non-magnetic mill mask layer 405 .
- the removing also results in removal of the photoresist mask formed over the dielectric hard mask 408 .
- the RIE process is an oxygen based chemistry utilizing a gas such as CO 2 , O 2 or a combination thereof.
- a gas such as CO 2 , O 2 or a combination thereof.
- nitrogen may be added to the gas mixture.
- the relative ratio of the oxygen containing gas to the nitrogen gas can be tuned to ensure the polymeric underlayer 406 is etched to produce the tapered walls 410 .
- the ratio can be between 15:1 to 1.5:1.
- the method of fabricating the tapered walls 410 as shown in FIG. 4C is discussed in U.S. patent application Ser. No. 13/251,058, filed Sep. 30, 2011, which is incorporated herein by reference.
- FIGS. 5A-5D are schematic cross-sectional views of the write pole 220 at various stages of fabrication.
- the polymeric underlayer mask 406 is tapered at an angle ⁇ , which is between about 0.5 degree and about 1 degree, following the RIE process.
- a thin reinforcement layer 502 of ion milling resistant material such as DLC (diamond like carbon), carbon, PLC (polymer like carbon), alumina, silicon oxide, silicon nitride, silicon carbide, or metals and their alloys such as Ta, TaN and etc.
- the layer 502 is deposited to a thickness of between about 5 nm to about 30 nm, such as about 15 nm.
- the reinforcement layer 502 is beneficial to the fabrication of the write pole 220 .
- the polymeric underlayer mask 406 may have too small bottom CD to support its weight (including dielectric hard mask 408 ) during ion mill process.
- the relatively soft mechanical strength of the polymeric underlayer material compared with that of the regular metals (or glass such as silicon oxide or ceramics such as silicon carbide) may not sufficient to sustain itself during ion mill process (especially the large angle ion mill that would intensively attacks the side wall of the polymeric underlayer and make it even more venerable) that the side wall 502 of the polymeric underlayer may be distorted or even collapse.
- the reinforcement layer 502 which is deposited onto the polymeric underlayer mask 406 before the ion mill process, serves to anchor the polymeric underlayer mask 406 and hard mask 408 to the layer of non-magnetic material 405 for the ion milling process.
- the ion milling process begins to bevel the layer of magnetic material 404 using different mill mode from the initial milling on the non-magnetic mill mask layer, as shown in FIG. 5C .
- the ion milling process utilizes argon ions and is operated with several modes to optimize the mill process and get desired magnetic write pole shape factors including the bevel angle and the CD. During the ion milling process, the ions are directed at an angle towards the layer of magnetic material 404 .
- the angle at which the ions are directed is selected based upon the desired bevel angle and generally corresponds to the desired bevel angle.
- the reinforcement layer 502 on the top surface of the dielectric hard mark 408 together with dielectric hard mask 408 is removed.
- the polymeric underlayer mask 406 is also shortened by the ion mill.
- the reinforcement layer 502 on the side wall of the polymeric underlayer mask 406 is partially or completely consumed depending on the initial deposition thickness of the reinforcement layer and the amount of the re-deposition from the ion mill process.
- the ion milling is able to mill the layer of magnetic material 404 to form a write pole 220 that is beveled at an angle of greater than about 15 degrees, and even up to or beyond 20 degree, from the polymeric underlayer mask 406 to the substrate 402 .
- the magnetic write pole 220 with a bevel angle lower than 15 degree can be more easily fabricated using the same polymeric underlayer mask anchored by reinforcement layer by adjusting the ion mill process.
- the reinforcement layer 502 does not only anchor and support the polymeric mask during ion mill process, but also functions as a mill mask too because the materials that are selected as the reinforcement layer 502 have a relatively lower mill rate compared to that of the polymeric underlayer mask 406 that the side wall consumption of the polymeric underlayer mask 406 is greatly reduced.
- the large angle and strong ion beam must be used to bevel the magnetic layer more that it consumes more underlayer mask on the side wall.
- the ion beam angle will be even larger, mill time of this large-angle mill would be longer and strength of the large-angle mill would be stronger that there are much more side wall consumption on the polymeric underlayer mask and it may not sustain to the final stage of the mill and collapsed if there is no reinforcement layer to support the polymeric underlayer mask during this harsh ion mill process.
- One possible way to resolve this issue for bevel angle less than about 15 degree is to widen the polymeric underlayer mask that its CD width is wide enough that it can still stand after the ion mill.
- the reinforcement layer 502 is deposited onto the polymeric underlayer mask 406 having a relatively small CD width.
- the materials of the reinforcement layer 502 are selected from DLC (diamond like carbon), amorphous carbon, PLC (polymer like carbon), alumina, silicon oxide, silicon nitride, silicon carbide, or metals and their alloys such as Ta, TaN and etc, or combinations thereof, which all have better mechanical strength and a lower ion mill rate compared to polymeric underlayer mask 406 .
- DLC diamond like carbon
- PLC polymer like carbon
- alumina silicon oxide
- silicon nitride silicon carbide
- metals and their alloys such as Ta, TaN and etc, or combinations thereof
- the ion mill process may start with an initial ion mill process which is used to mill through reinforcement layer on the non-magnetic mill mask and the non-magnetic mill mask layer 405 .
- the process can be well controlled by the endpoint with a certain amount of over milling to ensure the magnetic layer 404 is exposed to the next mill processes which bevel the magnetic layer to a high angle.
- the initial ion mill process can be tuned so that it may produce re-deposition on the surface of the remaining reinforcement layer 502 while punching through the reinforcement layer 502 .
- the re-deposition layer is formed from the initial milling process and provides extra layers to the reinforcement layer 502 and makes the reinforcement layer 502 even thicker and tougher for the later high-bevel angle mill process. Thus the re-deposition helps to obtain higher bevel angle magnetic write pole 220 .
- the reinforcement layer 502 is carbon based materials such as DLC (diamond like carbon), amorphous carbon, or PLC (polymer like carbon)
- a RIE process can be used to directionally remove the reinforcement layer 502 on the surface of the non-magnetic mill mask layer 405 .
- the RIE uses the oxygen containing plasma chemistry such as O 2 and CO 2 mixed with inert gas such as argon. Since the RIE etch can be tuned anisotropically so that the motions of the ions are mostly vertical and normal toward the substrate surface, the RIE plasma would mostly etch the carbon films on the surface of the non-magnetic mill mask layer 405 but result in much less etching of the carbon film deposited on the side wall of the polymeric underlayer mask 406 . Of course, the carbon film on the top of the dielectric hard mask is removed. With a carefully controlled RIE process, there should be enough carbon left over on the side wall of the polymeric underlayer mask 406 .
- the initial ion mill process can be used to mill through the non-magnetic mill mask layer 405 .
- the process can be well controlled by the endpoint with certain amount of over milling to ensure the magnetic layer 404 is exposed to the next mill processes which bevels the magnetic layer 404 to a high angle.
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
Abstract
Description
Claims (25)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/285,688 US8468683B2 (en) | 2011-10-31 | 2011-10-31 | High bevel angle magnetic writer pole fabrication process |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/285,688 US8468683B2 (en) | 2011-10-31 | 2011-10-31 | High bevel angle magnetic writer pole fabrication process |
Publications (2)
Publication Number | Publication Date |
---|---|
US20130104388A1 US20130104388A1 (en) | 2013-05-02 |
US8468683B2 true US8468683B2 (en) | 2013-06-25 |
Family
ID=48170907
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/285,688 Expired - Fee Related US8468683B2 (en) | 2011-10-31 | 2011-10-31 | High bevel angle magnetic writer pole fabrication process |
Country Status (1)
Country | Link |
---|---|
US (1) | US8468683B2 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8889019B1 (en) * | 2013-05-31 | 2014-11-18 | HGST Netherlands B.V. | Super shallow laminated hard mask stencil for magnetic read sensor fabrication |
US9129619B2 (en) | 2014-01-27 | 2015-09-08 | HGST Netherlands B.V. | Partial main pole lamination for pole erasure improvement |
US20170145396A1 (en) * | 2009-11-20 | 2017-05-25 | Danisco Us Inc. | Beta-glucosidase i variants with improved properties |
US9754611B1 (en) | 2015-11-30 | 2017-09-05 | Western Digital (Fremont), Llc | Magnetic recording write apparatus having a stepped conformal trailing shield |
US9767831B1 (en) | 2015-12-01 | 2017-09-19 | Western Digital (Fremont), Llc | Magnetic writer having convex trailing surface pole and conformal write gap |
US10242700B2 (en) | 2015-06-26 | 2019-03-26 | Western Digital (Fremont), Llc | Magnetic reader having a nonmagnetic insertion layer for the pinning layer |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8828248B2 (en) * | 2013-02-01 | 2014-09-09 | HGST Netherlands B.V | Method for defect reduction in magnetic write head fabrication |
Citations (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7186348B2 (en) | 2004-06-30 | 2007-03-06 | Hitachi Global Storage Technologies Netherlands B.V. | Method for fabricating a pole tip in a magnetic transducer |
US7296337B2 (en) * | 2004-05-25 | 2007-11-20 | Hitachi Global Storage Technologies Netherlands B.V. | Notched trailing shield for perpendicular write head |
US7441325B2 (en) | 2004-04-30 | 2008-10-28 | Hitachi Global Storage Technologies Netherlands B.V. | Perpendicular head with trailing shield and rhodium gap process |
US7444739B2 (en) | 2005-03-30 | 2008-11-04 | Hitachi Global Storage Technologies Netherlands, B.V. | Method for fabricating improved sensor for a magnetic head utilizing reactive ion milling process |
US7469467B2 (en) | 2004-04-30 | 2008-12-30 | Hitachi Global Storage Technologies Netherlands B.V. | Method of manufacturing a perpendicular write head |
US7509729B2 (en) | 2006-04-25 | 2009-03-31 | Hitachi Global Storage Technologies Netherlands B.V. | Method for making a perpendicular magnetic recording write head |
US7549213B2 (en) | 2005-01-12 | 2009-06-23 | Hitachi Global Storage Technologies Netherlands B.V. | Method for independent trackwidth and wall angle control and hexagonal write head |
US20090168242A1 (en) | 2007-12-28 | 2009-07-02 | Yinshi Liu | Method for manufacturing a perpendicular magnetic write pole having a large bevel angle |
US7562437B2 (en) | 2006-04-25 | 2009-07-21 | Hitachi Global Storage Technologies Netherlands B.V. | Method of manufacturing a wrap around shield for a perpendicular write pole using a laminated mask |
US7565732B2 (en) | 2004-08-31 | 2009-07-28 | Hitachi Global Storage Technologies Netherlands B.V. | Method of manufacturing a write pole |
US7587810B2 (en) | 2004-04-30 | 2009-09-15 | Hitachi Global Storage Technologies Netherlands B.V. | High milling resistance write pole fabrication method for perpendicular recording |
US7649712B2 (en) * | 2004-08-31 | 2010-01-19 | Hitachi Global Storage Technologies Netherlands B.V. | Self aligned wrap around shield for perpendicular magnetic recording |
US20100078316A1 (en) | 2008-09-30 | 2010-04-01 | Tdk Corporation | Method of forming mask for dry etching and manufacturing method of magnetic head using the same method |
US7712207B2 (en) | 2006-12-22 | 2010-05-11 | Hitachi Global Storage Technologies Netherlands B.V. | Method of manufacturing a wrap around shield for a perpendicular write pole using a laminated mask with an endpoint detection layer |
JP2010152971A (en) | 2008-12-25 | 2010-07-08 | Fujitsu Ltd | Method for manufacturing magnetic head |
US7757380B2 (en) * | 2006-11-10 | 2010-07-20 | Hitachi Global Storage Technologies Netherlands B.V. | Methods for the manufacture of notched trailing shields |
US7788796B2 (en) * | 2006-12-15 | 2010-09-07 | Hitachi Global Storage Technologies Netherlands B.V. | Method FPR manufacturing a magnetic write head |
-
2011
- 2011-10-31 US US13/285,688 patent/US8468683B2/en not_active Expired - Fee Related
Patent Citations (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7441325B2 (en) | 2004-04-30 | 2008-10-28 | Hitachi Global Storage Technologies Netherlands B.V. | Perpendicular head with trailing shield and rhodium gap process |
US7469467B2 (en) | 2004-04-30 | 2008-12-30 | Hitachi Global Storage Technologies Netherlands B.V. | Method of manufacturing a perpendicular write head |
US7587810B2 (en) | 2004-04-30 | 2009-09-15 | Hitachi Global Storage Technologies Netherlands B.V. | High milling resistance write pole fabrication method for perpendicular recording |
US7296337B2 (en) * | 2004-05-25 | 2007-11-20 | Hitachi Global Storage Technologies Netherlands B.V. | Notched trailing shield for perpendicular write head |
US7186348B2 (en) | 2004-06-30 | 2007-03-06 | Hitachi Global Storage Technologies Netherlands B.V. | Method for fabricating a pole tip in a magnetic transducer |
US7565732B2 (en) | 2004-08-31 | 2009-07-28 | Hitachi Global Storage Technologies Netherlands B.V. | Method of manufacturing a write pole |
US7649712B2 (en) * | 2004-08-31 | 2010-01-19 | Hitachi Global Storage Technologies Netherlands B.V. | Self aligned wrap around shield for perpendicular magnetic recording |
US7549213B2 (en) | 2005-01-12 | 2009-06-23 | Hitachi Global Storage Technologies Netherlands B.V. | Method for independent trackwidth and wall angle control and hexagonal write head |
US7444739B2 (en) | 2005-03-30 | 2008-11-04 | Hitachi Global Storage Technologies Netherlands, B.V. | Method for fabricating improved sensor for a magnetic head utilizing reactive ion milling process |
US7562437B2 (en) | 2006-04-25 | 2009-07-21 | Hitachi Global Storage Technologies Netherlands B.V. | Method of manufacturing a wrap around shield for a perpendicular write pole using a laminated mask |
US7509729B2 (en) | 2006-04-25 | 2009-03-31 | Hitachi Global Storage Technologies Netherlands B.V. | Method for making a perpendicular magnetic recording write head |
US7757380B2 (en) * | 2006-11-10 | 2010-07-20 | Hitachi Global Storage Technologies Netherlands B.V. | Methods for the manufacture of notched trailing shields |
US7788796B2 (en) * | 2006-12-15 | 2010-09-07 | Hitachi Global Storage Technologies Netherlands B.V. | Method FPR manufacturing a magnetic write head |
US7712207B2 (en) | 2006-12-22 | 2010-05-11 | Hitachi Global Storage Technologies Netherlands B.V. | Method of manufacturing a wrap around shield for a perpendicular write pole using a laminated mask with an endpoint detection layer |
US20090168242A1 (en) | 2007-12-28 | 2009-07-02 | Yinshi Liu | Method for manufacturing a perpendicular magnetic write pole having a large bevel angle |
US20100078316A1 (en) | 2008-09-30 | 2010-04-01 | Tdk Corporation | Method of forming mask for dry etching and manufacturing method of magnetic head using the same method |
JP2010152971A (en) | 2008-12-25 | 2010-07-08 | Fujitsu Ltd | Method for manufacturing magnetic head |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20170145396A1 (en) * | 2009-11-20 | 2017-05-25 | Danisco Us Inc. | Beta-glucosidase i variants with improved properties |
US8889019B1 (en) * | 2013-05-31 | 2014-11-18 | HGST Netherlands B.V. | Super shallow laminated hard mask stencil for magnetic read sensor fabrication |
US20140353276A1 (en) * | 2013-05-31 | 2014-12-04 | HGST Netherlands B.V. | Super shallow laminated hard mask stencil for magnetic read sensor fabrication |
US9129619B2 (en) | 2014-01-27 | 2015-09-08 | HGST Netherlands B.V. | Partial main pole lamination for pole erasure improvement |
US10242700B2 (en) | 2015-06-26 | 2019-03-26 | Western Digital (Fremont), Llc | Magnetic reader having a nonmagnetic insertion layer for the pinning layer |
US9754611B1 (en) | 2015-11-30 | 2017-09-05 | Western Digital (Fremont), Llc | Magnetic recording write apparatus having a stepped conformal trailing shield |
US10121495B2 (en) | 2015-11-30 | 2018-11-06 | Western Digital (Fremont), Llc | Magnetic recording write apparatus having a stepped conformal trailing shield |
US9767831B1 (en) | 2015-12-01 | 2017-09-19 | Western Digital (Fremont), Llc | Magnetic writer having convex trailing surface pole and conformal write gap |
US9997177B2 (en) | 2015-12-01 | 2018-06-12 | Western Digital (Fremont), Llc | Magnetic writer having convex trailing surface pole and conformal write gap |
Also Published As
Publication number | Publication date |
---|---|
US20130104388A1 (en) | 2013-05-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8617408B2 (en) | Method for manufacturing a magnetic read sensor with narrow track width using amorphous carbon as a hard mask and localized CMP | |
US9047894B2 (en) | Magnetic write head having spin torque oscillator that is self aligned with write pole | |
US8828248B2 (en) | Method for defect reduction in magnetic write head fabrication | |
US8468683B2 (en) | High bevel angle magnetic writer pole fabrication process | |
US8797685B2 (en) | Perpendicular write head having a stepped flare structure and method of manufacture thereof | |
US7848065B2 (en) | Magnetoresistive sensor having an anisotropic hard bias with high coercivity | |
US7185415B2 (en) | Method for forming a magnetic head having a flux shaping layer | |
US8907666B2 (en) | Magnetic bias structure for magnetoresistive sensor having a scissor structure | |
US20070245545A1 (en) | Method of manufacturing a wrap around shield for a perpendicular write pole using a laminated mask | |
US20070153418A1 (en) | Magnetic recording head and fabrication process | |
US8796152B2 (en) | Method for manufacturing a magnetoresistive sensor | |
US8137570B2 (en) | Additive write pole process for wrap around shield | |
JP2011119005A (en) | Magnetic head and method for manufacturing the same | |
US7743487B2 (en) | Method to planarize perpendicular write poles using a combination of CMP and reactive ion milling | |
JP2010146641A (en) | Perpendicular recording magnetic head, manufacturing method thereof, and magnetic disk device | |
US8636913B2 (en) | Removing residues in magnetic head fabrication | |
US8031434B2 (en) | Hybrid, self aligned magnetic write head with a partially plated pole and method of producing same | |
US20060232882A1 (en) | P3 fabrication with NiFe and alumina mask using resist shrinking process | |
US8371019B1 (en) | Method for manufacturing a magnetic write pole having straight side walls and a well defined track-width | |
US20090161269A1 (en) | Magnetoresistive sensor having an enhanced free layer stabilization mechanism | |
US8136228B2 (en) | Method for manufacturing a magnetic write head | |
US20120125884A1 (en) | Method for manufacturing a narrow magnetic read width current perpendicular to plane magnetoresistive sensor | |
US20130082027A1 (en) | Method for manufacturing a perpendicular magnetic write head using novel reactive ion etching chemistry | |
US8839504B2 (en) | Method of fabricating a device having a sidegap | |
US8801944B2 (en) | Method for manufacturing a magnetic write head using novel mask structure |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: HITACHI GLOBAL STORAGE TECHONOLOGIES NETHERLANDS B Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:MAO, GUOMIN;ZHENG, YI;REEL/FRAME:027149/0832 Effective date: 20111027 |
|
AS | Assignment |
Owner name: HGST NETHERLANDS B.V., NETHERLANDS Free format text: CHANGE OF NAME;ASSIGNOR:HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V.;REEL/FRAME:029341/0777 Effective date: 20120723 |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
AS | Assignment |
Owner name: WESTERN DIGITAL TECHNOLOGIES, INC., CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:HGST NETHERLANDS B.V.;REEL/FRAME:040826/0327 Effective date: 20160831 |
|
FPAY | Fee payment |
Year of fee payment: 4 |
|
AS | Assignment |
Owner name: JPMORGAN CHASE BANK, N.A., AS AGENT, ILLINOIS Free format text: SECURITY INTEREST;ASSIGNOR:WESTERN DIGITAL TECHNOLOGIES, INC.;REEL/FRAME:052915/0566 Effective date: 20200113 |
|
FEPP | Fee payment procedure |
Free format text: MAINTENANCE FEE REMINDER MAILED (ORIGINAL EVENT CODE: REM.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
LAPS | Lapse for failure to pay maintenance fees |
Free format text: PATENT EXPIRED FOR FAILURE TO PAY MAINTENANCE FEES (ORIGINAL EVENT CODE: EXP.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
STCH | Information on status: patent discontinuation |
Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362 |
|
FP | Lapsed due to failure to pay maintenance fee |
Effective date: 20210625 |
|
AS | Assignment |
Owner name: WESTERN DIGITAL TECHNOLOGIES, INC., CALIFORNIA Free format text: RELEASE OF SECURITY INTEREST AT REEL 052915 FRAME 0566;ASSIGNOR:JPMORGAN CHASE BANK, N.A.;REEL/FRAME:059127/0001 Effective date: 20220203 |