US8324719B2 - Electronic package system - Google Patents
Electronic package system Download PDFInfo
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- US8324719B2 US8324719B2 US12/550,442 US55044209A US8324719B2 US 8324719 B2 US8324719 B2 US 8324719B2 US 55044209 A US55044209 A US 55044209A US 8324719 B2 US8324719 B2 US 8324719B2
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- liquid contact
- contact material
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- electrical
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- 239000000463 material Substances 0.000 claims abstract description 101
- 239000007788 liquid Substances 0.000 claims abstract description 79
- 238000004891 communication Methods 0.000 claims abstract description 15
- 238000006073 displacement reaction Methods 0.000 claims abstract description 4
- 239000013078 crystal Substances 0.000 claims description 22
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 18
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 18
- 239000000956 alloy Substances 0.000 claims description 12
- 229910045601 alloy Inorganic materials 0.000 claims description 12
- 239000010949 copper Substances 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- 230000037361 pathway Effects 0.000 claims description 8
- 229910052733 gallium Inorganic materials 0.000 claims description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- -1 polytetrafluoroethylene Polymers 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 239000012530 fluid Substances 0.000 claims description 3
- BITYAPCSNKJESK-UHFFFAOYSA-N potassiosodium Chemical compound [Na].[K] BITYAPCSNKJESK-UHFFFAOYSA-N 0.000 claims description 3
- QWUZMTJBRUASOW-UHFFFAOYSA-N cadmium tellanylidenezinc Chemical compound [Zn].[Cd].[Te] QWUZMTJBRUASOW-UHFFFAOYSA-N 0.000 claims description 2
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 claims description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 2
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- 229910001128 Sn alloy Inorganic materials 0.000 claims 2
- 239000004411 aluminium Substances 0.000 claims 2
- 239000007791 liquid phase Substances 0.000 claims 2
- 229910000846 In alloy Inorganic materials 0.000 claims 1
- 229910000799 K alloy Inorganic materials 0.000 claims 1
- 239000012071 phase Substances 0.000 claims 1
- 238000013461 design Methods 0.000 abstract description 11
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- 229910052718 tin Inorganic materials 0.000 description 2
- 229910003251 Na K Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
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- 229910001338 liquidmetal Inorganic materials 0.000 description 1
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- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01077—Iridium [Ir]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
Definitions
- the invention relates generally to a package system for an electronic device and particularly to a package system that incorporates liquid metal electrical joints to provide electrical conductivity and mechanical stability for an electronic element.
- Electronic devices are often subjected to harsh mechanical forces, for example, shock and vibrations, and/or thermally induced stresses such as rapid changes in temperature, temperature gradients, or thermal cycling. Such conditions place exceptional strain on electrical joints that are typically formed by two dissimilar materials. If the electronic device is subject to impact, there is a possibility of normal, shear, and/or torsional forces transmitting into the joint, causing cracking or fracturing of the electronic device. Similarly, if the electronic device is moved from one temperature to another, differences in the thermal expansion or contraction of the varying materials induce stresses in the joint, which in turn, can create cracks in the electronic device.
- the electronic package includes at least one module.
- the module comprises an electronic element, a bottom contact, and a liquid contact material in electrical communication with the electronic element and the bottom contact.
- the module also includes a fluid retention body surrounding a portion of the liquid contact material.
- the liquid contact material of the electronic package is characterized by having a liquidus temperature below 20° C.
- the present invention is an electronic package comprising at least one module.
- the module includes a top electrode, a semiconductor crystal, a gallium-based liquid contact material, a bottom contact, a bottom contact electrode, and a polytetrafluoroethylene (PTFE) fluid retention body.
- the top electrode is connected to external circuitry and the semiconductor crystal is in electrical communication with the top electrode.
- the bottom contact is connected to the external circuitry through the bottom contact electrode.
- the gallium-based liquid contact material is in electrical communication with the semiconductor crystal and the bottom contact.
- the fluid retention body comprising PTFE material surrounds a portion of the liquid contact material.
- FIG. 1 is a cross-sectional view of an electronic package module in accordance with one embodiment of the present invention.
- FIG. 2 is a cross-sectional view of an exemplary electronic package module in accordance with one embodiment of the present invention.
- FIG. 3 is a schematic representation of an electronic package module in accordance with one embodiment of the present invention.
- FIG. 4 is a graphical representation of the I-V characteristics of a semiconductor crystal subjected to an electronic package in accordance with one embodiment of the present invention.
- Various embodiments of the present invention describe a universal package design based on liquid contact materials.
- One embodiment of the present invention uses a liquid contact material to substantially avoid mechanically- and thermally-induced strains in an electrical joint.
- the conductivity of the liquid contact material helps form and maintain electrical contact between the elements.
- the ability of the liquid contact material to flow prevents the creation of stresses and affords an electronic package design tolerant of small displacements or torsions.
- the liquid contact material enables a physical “floating” contact with high electrical reliability.
- FIG. 1 depicts an electronic package module 10 including a liquid contact material in accordance with one embodiment of the present invention.
- the module 10 comprises an electronic element 12 , a fluid retention body 14 having a cavity 16 , a bottom contact 18 , and a liquid contact material 20 disposed within the cavity 16 .
- This configuration enables an electrical pathway between the electronic element 12 and bottom contact 18 through the liquid contact material 20 .
- the bottom contact while providing the electrical pathway, in one embodiment also serves as a plug to keep the liquid contact material in place within the cavity.
- the surface and shape of the plug along the interface with the liquid contact material can be chosen to provide a large contact area and leak-proof seal for the liquid contact material 20 .
- An optional bottom electrode 26 can be incorporated on the surface of the electronic element 12 interfacing with the liquid contact material 20 .
- the package system further comprises a top electrode 22 , and an optional bottom contact electrode 24 to connect the electronic element 12 and the bottom contact 18 , respectively, to external electrical circuitry through the electrical lead wires 32 , 34 .
- the fluid retention body 14 can have further design modifications such as, for example, a curved lip knife-edge 38 at an interface with the electronic element 12 or the optional bottom electrode 26 to prevent leakage without mechanically stressing the electronic element 12 .
- the electronic element 12 comprises an electronic material.
- the electronic element 12 is a semiconductor crystal.
- the electronic element 12 comprises a cadmium zinc telluride crystal.
- Large Cd 1-x Zn x Te single crystals allow for the direct conversion of gamma radiation into electrical signals, enabling spectroscopic detectors of high-energy resolution.
- the “bulk” nature of such semiconducting crystals creates a significant mass that must be incorporated into the electronic device. If conventional electronic joints such as solder bumps are utilized during packaging, vibrations and jarring during normal handling can generate cracks in the brittle crystal, especially near the vicinity of the joint.
- the module design as depicted in FIG. 1 helps to prevent mechanically or thermally-induced strains, thereby creating a robust electronic package and permitting deployment in mobile and portable applications.
- the fluid retention body 14 contains a cavity 16 of desired shape to hold the liquid contact material 20 .
- the fluid retention body 14 comprises two openings.
- a first opening 28 in the cavity allows the liquid contact material 20 to wet the electronic element 12 , or the bottom electrode 26 if present, on its surface.
- the second opening 30 enables a bottom contact 18 to fit into the fluid retention body 14 thereby enabling wetting of the bottom contact 18 by the liquid contact material 20 .
- the cavity of the fluid retention body 14 can be of any shape and size based on the requirement of the quantity and orientation of the liquid contact material with the electronic element 12 and the bottom contact 18 .
- the liquid contact material will have to be contained in a cavity having a large opening so as to enable electrical communication with all the parts of the array of the electronic element 12 .
- the cavity can be designed in the shape and orientation facilitating the contact of the electronic element 12 with the liquid contact material 20 .
- the cavity of the fluid retention body 14 as illustrated in FIG. 1 , is cylindrical in geometry.
- the cavity opening can be of a shape that allows effective wetting of the electronic element 12 for good electrical contact without any leakage.
- the bottom electrode 26 is present, in one embodiment, the cavity opening can be made smaller than the bottom electrode's contacting surface. This configuration allows accommodation of small relative translations such as gliding while maintaining wetting of the electrode.
- the fluid retention body 14 comprises electronically insulating materials.
- the fluid retention body 14 is made of a material that is chemically inert to the contained liquid contact material 20 and is sufficiently soft to minimize scratching or damaging the electronic element 12 , or if present, the bottom electrode 26 .
- the fluid retention body 14 When pressed flush against the electronic surface, the fluid retention body 14 provides a seal to prevent leakage, either through direct contact or through an intermediate body such as, for example, gaskets or o-rings.
- FIG. 1 illustrates a non-limiting design to achieve a seal as per one embodiment of the invention.
- the fluid retention body 14 of FIG. 1 has a raised curled-lip knife-edge 38 that readily deforms when pressed against the bottom electrode of the electronic element 12 , forming a leak-proof seal.
- the solid fluid retention body 14 is made of a material having at least about 10 3 times more resistivity than the resistivity of liquid contact material.
- fluoropolymer materials are used for the fluid retention body 14 .
- the fluid retention body 14 can be made of polytetrafluoroethylene (PTFE).
- the liquid contact material 20 performs the function of a conventional electrical joint that would otherwise directly bond the electronic element, or bottom electrode if present, to the bottom contact through a solid-state conducting material.
- Conventional electrical joints are poorly compatible with many high-value fragile and brittle electronic elements, and are susceptible to the transmission of mechanically- or thermally-induced stresses.
- the use of liquid contact material 20 forms an electrical pathway while mitigating mechanically- or thermally-induced strains. This feature has significant commercial value in hand-held, mobile, and portable electronic devices where operation in harsh and uncontrolled environments is common.
- Liquid contact material 20 is generally a fluid at temperatures above its liquidus temperature.
- a liquidus temperature as used herein is a temperature at which a liquid begins to freeze.
- the liquid contact material 20 with a liquidus temperature less than that of room temperature is used for general electronic devices.
- the liquid contact material 20 has a liquidus temperature less than 20° C.
- the liquid material has a liquidus temperature less than 10° C.
- the liquid material has a liquidus temperature less than 0° C.
- the liquid contact material 20 generally comprises an electrically conductive fluid having a resistivity that is suitable for the transmission of electronic signals.
- the resistivity of the liquid contact material 20 is less than or equal to about 10 2 ohm-cm. In another embodiment, the resistivity is less than about 10 ⁇ 1 ohm-cm. In yet another embodiment, the resistivity of the liquid contact materials is less than about 10 ⁇ 3 ohm-cm.
- the liquid contact material 20 includes compositions and alloys of any of the following: alkali metals, alkaline-earth metals, transition metals, rare earth metals, and group 12-15 metals and metalloids.
- Non-limiting examples of liquid contact material 20 include materials containing one or more of the following: mercury (Hg), sodium-potassium (Na—K) alloys, gallium-based alloys, gallium-indium (Ga—In) alloys, and gallium-tin (Ga—Sn) alloys.
- compositions from the Ga—In—Sn ternary system are used as the liquid contact material 20 .
- the Ga—In—Sn ternary system is advantageous as many of the alloy members display fluidity under standard ambient conditions with a select number retaining fluidity below 0° C. Some of these can be intermittently supercooled (i.e., cooled without solidifying) below ⁇ 30° C. Such low freezing points enable a broad operating temperature for hand-held, mobile, and portable electronics that may require operation in cold environments. Further, the alloy members of this family exhibit resistivities close to that of copper. For example, the eutectic composition of Ga—In—Sn has a resistivity of about 3 ⁇ 10 ⁇ 5 ohm-cm compared to the resistivity of about 2 ⁇ 10 ⁇ 6 ohm-cm for copper (Cu).
- Ga—In—Sn compositions can provide a liquid contact material 20 having very high electrical reliability while causing minimal contributions to electronic noise.
- an alloy comprising at least 65 atomic % Ga, at least 20 atomic % In, and at least 9 atomic % Sn is used as the liquid contact material 20 .
- the liquidus temperature of the above mentioned ternary system is below 0° C.
- the liquidus temperatures of a number of the Ga—In—Sn compositions are below 0° C.
- the boiling points of these compositions are normally above 1300° C. thus leading to a wide liquid range for the Ga—In—Sn compositions.
- This wide liquid range combined with a negligible vapor pressure, enable the Ga—In—Sn compositions to be subjected to the conventional processing techniques of electronic package such as, for example, wire and lead attachment through point soldering and reflow of solder pastes.
- This capability stands in contrast to liquid contact materials containing organic or aqueous based media that might boil or decompose, destroying the electrical joint.
- the bottom contact 18 comprises a plug to contain the liquid contact material 20 within the cavity of the fluid retention body 14 .
- This contact is electrically conductive and chemically compatible with the liquid contact material 20 .
- the bottom contact 18 is illustrated as a cylindrical body with a spherical head, friction-fitted into the fluid retention body 14 to provide a leak-proof seal.
- Other geometries and attachment mechanisms such as threading, and slots, for example, are within the scope of this invention.
- the bottom contact 18 serves to complete the electrical pathway from the electronic element 12 , through the liquid contact material 20 , to external circuitry.
- the bottom contact 18 therefore provides a solid interface point, enabling direct attachment of electrical leads or wires through known methods such as, for example soldering and ultrasonic joining.
- Non-limiting examples of bottom contact 18 materials include a platinum group material, copper, silver, gold, nickel, aluminum, tungsten, and their alloys.
- a platinum group material includes any metal or metals from the group consisting of platinum, palladium, rhodium, ruthenium, iridium and osmium.
- the bottom electrode 26 can help to improve wetting by the liquid contact material 20 without substantially reducing the electrical conductivity between the electronic element 12 and the liquid contact material 20 . Also, the bottom electrode can be used to inhibit or slow down corrosion or chemical etching of the electronic element 12 that may otherwise result from a direct contact of the electronic material with the liquid contact material 20 .
- Non-limiting examples of the bottom electrode 26 material includes a platinum group material, gold, silver, nickel, aluminum, copper, tungsten and their alloys.
- the bottom electrode 26 can be designed to be chemically compatible with both the electronic element 12 and the liquid contact material 20 .
- the thickness of the bottom electrode 26 is chosen so as to not induce large mechanical stresses within the bottom electrode itself or with the electronic element 12 , but at the same time is sufficiently thick to provide chemical protection of the electronic element 12 and improved workability of the system 10 . For example, a large thickness can lead to cracking or delamination during transport or operation.
- the thickness of the bottom electrode is less than ten micrometers and in another embodiment, the thickness of the bottom electrode is from about 0.1 micrometer to about 1 micrometer.
- the electronic package comprises a plurality of modules.
- the modules are disposed in a pre-determined electrical communication network.
- the modules can further be arrayed in series or parallel such that an array is now considered as a single device.
- the electronic package includes individual modules comprising arrays of liquid contact materials, thus enabling the creation of a universal electronic package design for electronic elements.
- FIG. 2 depicts an exemplary electronic package module comprising an array of individual liquid contact materials 20 placed in electrical communication with the electronic element 12 and the bottom contacts 18 based on a substrate 36 .
- the “individual” liquid contact materials 20 as used herein need not be of different materials.
- the liquid contact materials can be comprised of the same materials base or different, depending on the application of the electronic package.
- the electronic element 12 and/or the substrate 36 can be a single element or the representation of an array of individual components depending on the application of the electronic package.
- the individual liquid contact materials 20 are contained and separated from each other through the fluid retention body 14 .
- the individual liquid contact materials 20 are in electrical communication with the electronic element 12 through the individual top electrodes 26 .
- the individual liquid contact materials 20 are in electrical communication with the optional bottom contact electrodes 24 disposed on the substrate 36 through the bottom contact 18 .
- FIG. 3 schematically represents the top view 50 , bottom view 60 and a side view 70 of the assembly of the Cd 0.9 Zn 0.1 Te crystal along with the other elements of the package.
- the pixelated 3 ⁇ 3 grid of gold electrode 54 that can be connected to an external circuitry is visible in the top view 50 .
- the Cd 0.9 Zn 0.1 Te crystal 52 was inserted into the top PTFE plate 72 that contained a square recess to allow the crystal to be seated.
- the bottom PTFE plate 56 was centered and placed against the bottom surface of the crystal.
- the bottom PTFE plate 56 contains a cylindrical through-hole (i.e., cavity 16 ), such that the surface in contact with the crystal protrudes as a circular lip that terminates in a “knife” edge.
- Rigid plates 74 of polycarbonate plastic were introduced on the outer surfaces of the top 72 and bottom 56 PTFE plates to allow uniform pressure across the PTFE plates.
- the top and bottom rigid plates 74 and the top 72 and bottom 56 PTFE plates were connected through the screws 76 . While the compliance of PTFE prevented damage to the crystal, the compliant knife edge of the bottom PTFE plate 56 deformed, creating a leak-proof seal for the liquid contact material 20 .
- the materials Ga, In, and Sn were added, respectively, in the atomic ratio of 68.5, 21.5, and 10 to a PTFE container (not shown) and melted at 100° C.-120° C. in a convection oven.
- the resulting liquid alloy was deposited into the cylindrical cavity of the bottom PTFE plate 56 , at room temperature, thus forming the liquid contact material 20 .
- a gold-coated copper material 62 was inserted into the cavity, becoming the bottom contact.
- the gold-coated copper material 62 had a dome-shaped top end and electrical leads 64 soldered to the bottom end.
- FIG. 4 depicts the current-voltage (I-V) curve 80 of the above-described contact configuration.
- the graph shows the generally expected I-V characteristics of a semiconducting crystal thereby indicating that the package/contact design of the present invention did not distort the I-V characteristics of the electronic element.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Electrodes Of Semiconductors (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
Claims (15)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/550,442 US8324719B2 (en) | 2009-08-31 | 2009-08-31 | Electronic package system |
PCT/US2010/039734 WO2011025579A2 (en) | 2009-08-31 | 2010-06-24 | Electronic package system |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/550,442 US8324719B2 (en) | 2009-08-31 | 2009-08-31 | Electronic package system |
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Cited By (2)
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US20150146395A1 (en) * | 2013-11-26 | 2015-05-28 | Lotes Co., Ltd | Electrically conductive material |
US20150168087A1 (en) * | 2013-12-12 | 2015-06-18 | General Electric Company | Reusable phase-change thermal interface structures |
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US9728868B1 (en) | 2010-05-05 | 2017-08-08 | Cree Fayetteville, Inc. | Apparatus having self healing liquid phase power connects and method thereof |
US20180375239A1 (en) * | 2017-06-23 | 2018-12-27 | Microsoft Technology Licensing, Llc | Liquid metal circuit element connector |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150146395A1 (en) * | 2013-11-26 | 2015-05-28 | Lotes Co., Ltd | Electrically conductive material |
US20150168087A1 (en) * | 2013-12-12 | 2015-06-18 | General Electric Company | Reusable phase-change thermal interface structures |
US9826662B2 (en) * | 2013-12-12 | 2017-11-21 | General Electric Company | Reusable phase-change thermal interface structures |
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US20110049697A1 (en) | 2011-03-03 |
WO2011025579A3 (en) | 2011-06-16 |
WO2011025579A2 (en) | 2011-03-03 |
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