US7799508B2 - Resist pattern thickening material and process for forming resist pattern, and semiconductor device and process for manufacturing the same - Google Patents
Resist pattern thickening material and process for forming resist pattern, and semiconductor device and process for manufacturing the same Download PDFInfo
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- US7799508B2 US7799508B2 US12/453,590 US45359009A US7799508B2 US 7799508 B2 US7799508 B2 US 7799508B2 US 45359009 A US45359009 A US 45359009A US 7799508 B2 US7799508 B2 US 7799508B2
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- resist pattern
- thickening material
- resist
- thickened
- group
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- 230000008719 thickening Effects 0.000 title claims abstract description 362
- 239000000463 material Substances 0.000 title claims abstract description 333
- 238000000034 method Methods 0.000 title claims abstract description 145
- 230000008569 process Effects 0.000 title claims abstract description 101
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 87
- 239000004065 semiconductor Substances 0.000 title claims abstract description 68
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 90
- 150000001875 compounds Chemical class 0.000 claims description 79
- 229920005989 resin Polymers 0.000 claims description 76
- 239000011347 resin Substances 0.000 claims description 76
- 239000004094 surface-active agent Substances 0.000 claims description 71
- -1 alkyl ether compound Chemical class 0.000 claims description 55
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 37
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 37
- 125000003277 amino group Chemical group 0.000 claims description 31
- 125000000217 alkyl group Chemical group 0.000 claims description 24
- 238000000059 patterning Methods 0.000 claims description 24
- 238000005530 etching Methods 0.000 claims description 23
- 238000006243 chemical reaction Methods 0.000 claims description 20
- 229920002554 vinyl polymer Polymers 0.000 claims description 20
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 18
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 17
- 125000003545 alkoxy group Chemical group 0.000 claims description 15
- WVDDGKGOMKODPV-UHFFFAOYSA-N Benzyl alcohol Chemical group OCC1=CC=CC=C1 WVDDGKGOMKODPV-UHFFFAOYSA-N 0.000 claims description 14
- 238000012545 processing Methods 0.000 claims description 14
- 238000006467 substitution reaction Methods 0.000 claims description 14
- 235000014113 dietary fatty acids Nutrition 0.000 claims description 13
- 239000000194 fatty acid Substances 0.000 claims description 13
- 229930195729 fatty acid Natural products 0.000 claims description 13
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 11
- WGQKYBSKWIADBV-UHFFFAOYSA-N benzylamine Chemical group NCC1=CC=CC=C1 WGQKYBSKWIADBV-UHFFFAOYSA-N 0.000 claims description 11
- 238000010894 electron beam technology Methods 0.000 claims description 11
- 230000005865 ionizing radiation Effects 0.000 claims description 11
- 125000000524 functional group Chemical group 0.000 claims description 10
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 10
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 9
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 claims description 9
- 125000004453 alkoxycarbonyl group Chemical group 0.000 claims description 9
- 238000004132 cross linking Methods 0.000 claims description 9
- 125000001424 substituent group Chemical group 0.000 claims description 9
- AHXXIALEMINDAW-UHFFFAOYSA-N 4-(methoxymethyl)phenol Chemical compound COCC1=CC=C(O)C=C1 AHXXIALEMINDAW-UHFFFAOYSA-N 0.000 claims description 6
- 150000001241 acetals Chemical class 0.000 claims description 6
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerol Natural products OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 5
- 235000011187 glycerol Nutrition 0.000 claims description 5
- 229920002503 polyoxyethylene-polyoxypropylene Polymers 0.000 claims description 5
- 229920002689 polyvinyl acetate Polymers 0.000 claims description 4
- 239000011118 polyvinyl acetate Substances 0.000 claims description 4
- 239000004925 Acrylic resin Substances 0.000 claims description 3
- 229920000178 Acrylic resin Polymers 0.000 claims description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 3
- 125000002723 alicyclic group Chemical group 0.000 claims description 3
- 238000009833 condensation Methods 0.000 claims description 3
- 230000005494 condensation Effects 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims description 3
- DLSSSVYTDXSXKE-UHFFFAOYSA-N 1-phenylethane-1,2-dithiol Chemical compound SCC(S)C1=CC=CC=C1 DLSSSVYTDXSXKE-UHFFFAOYSA-N 0.000 claims description 2
- RQCDKJFKYGNXBD-UHFFFAOYSA-N 4-(hydroxymethyl)benzene-1,3-diol Chemical compound OCC1=CC=C(O)C=C1O RQCDKJFKYGNXBD-UHFFFAOYSA-N 0.000 claims description 2
- BWVAOONFBYYRHY-UHFFFAOYSA-N [4-(hydroxymethyl)phenyl]methanol Chemical compound OCC1=CC=C(CO)C=C1 BWVAOONFBYYRHY-UHFFFAOYSA-N 0.000 claims description 2
- 150000001925 cycloalkenes Chemical class 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000011976 maleic acid Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 description 158
- 239000010410 layer Substances 0.000 description 63
- 238000010586 diagram Methods 0.000 description 44
- 238000002156 mixing Methods 0.000 description 41
- 125000004122 cyclic group Chemical group 0.000 description 29
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 27
- 229920005591 polysilicon Polymers 0.000 description 27
- 239000002344 surface layer Substances 0.000 description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 23
- 239000000243 solution Substances 0.000 description 22
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 21
- 125000003118 aryl group Chemical group 0.000 description 20
- 230000003993 interaction Effects 0.000 description 19
- 239000011229 interlayer Substances 0.000 description 18
- 230000015654 memory Effects 0.000 description 18
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 18
- 239000002736 nonionic surfactant Substances 0.000 description 16
- CQRYARSYNCAZFO-UHFFFAOYSA-N salicyl alcohol Chemical compound OCC1=CC=CC=C1O CQRYARSYNCAZFO-UHFFFAOYSA-N 0.000 description 16
- 230000002093 peripheral effect Effects 0.000 description 15
- 238000002203 pretreatment Methods 0.000 description 15
- 239000003444 phase transfer catalyst Substances 0.000 description 14
- 239000000758 substrate Substances 0.000 description 14
- 150000001491 aromatic compounds Chemical class 0.000 description 13
- 239000010936 titanium Substances 0.000 description 13
- 150000003839 salts Chemical class 0.000 description 12
- 125000006290 2-hydroxybenzyl group Chemical group [H]OC1=C(C([H])=C([H])C([H])=C1[H])C([H])([H])* 0.000 description 11
- 239000003990 capacitor Substances 0.000 description 11
- 229910052681 coesite Inorganic materials 0.000 description 11
- 239000010949 copper Substances 0.000 description 11
- 229910052906 cristobalite Inorganic materials 0.000 description 11
- 230000000694 effects Effects 0.000 description 11
- 239000000377 silicon dioxide Substances 0.000 description 11
- 238000004528 spin coating Methods 0.000 description 11
- 229910052682 stishovite Inorganic materials 0.000 description 11
- 229910052905 tridymite Inorganic materials 0.000 description 11
- 238000000576 coating method Methods 0.000 description 10
- 239000008367 deionised water Substances 0.000 description 10
- 229910021641 deionized water Inorganic materials 0.000 description 10
- 239000002904 solvent Substances 0.000 description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 9
- 239000002253 acid Substances 0.000 description 9
- 239000007864 aqueous solution Substances 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 9
- 230000008961 swelling Effects 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- 229910052719 titanium Inorganic materials 0.000 description 9
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 239000003960 organic solvent Substances 0.000 description 8
- 239000003870 refractory metal Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 150000001408 amides Chemical class 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 6
- 229960001231 choline Drugs 0.000 description 6
- 238000001035 drying Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- VYFOAVADNIHPTR-UHFFFAOYSA-N isatoic anhydride Chemical compound NC1=CC=CC=C1CO VYFOAVADNIHPTR-UHFFFAOYSA-N 0.000 description 6
- 150000003138 primary alcohols Chemical class 0.000 description 6
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000011354 acetal resin Substances 0.000 description 5
- 239000002585 base Substances 0.000 description 5
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 5
- 239000003093 cationic surfactant Substances 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 5
- 239000004926 polymethyl methacrylate Substances 0.000 description 5
- 229920006324 polyoxymethylene Polymers 0.000 description 5
- 235000013824 polyphenols Nutrition 0.000 description 5
- OEIJRRGCTVHYTH-UHFFFAOYSA-N Favan-3-ol Chemical compound OC1CC2=CC=CC=C2OC1C1=CC=CC=C1 OEIJRRGCTVHYTH-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 4
- REFJWTPEDVJJIY-UHFFFAOYSA-N Quercetin Chemical compound C=1C(O)=CC(O)=C(C(C=2O)=O)C=1OC=2C1=CC=C(O)C(O)=C1 REFJWTPEDVJJIY-UHFFFAOYSA-N 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 150000008366 benzophenones Chemical class 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 150000002148 esters Chemical class 0.000 description 4
- 229930003935 flavonoid Natural products 0.000 description 4
- 235000017173 flavonoids Nutrition 0.000 description 4
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 4
- KWIUHFFTVRNATP-UHFFFAOYSA-N glycine betaine Chemical compound C[N+](C)(C)CC([O-])=O KWIUHFFTVRNATP-UHFFFAOYSA-N 0.000 description 4
- 229930182470 glycoside Natural products 0.000 description 4
- 150000002338 glycosides Chemical class 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- PFTAWBLQPZVEMU-DZGCQCFKSA-N (+)-catechin Chemical compound C1([C@H]2OC3=CC(O)=CC(O)=C3C[C@@H]2O)=CC=C(O)C(O)=C1 PFTAWBLQPZVEMU-DZGCQCFKSA-N 0.000 description 3
- AXKGIPZJYUNAIW-UHFFFAOYSA-N (4-aminophenyl)methanol Chemical compound NC1=CC=C(CO)C=C1 AXKGIPZJYUNAIW-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical group C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 3
- YLQBMQCUIZJEEH-UHFFFAOYSA-N Furan Chemical compound C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical compound C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- 150000007860 aryl ester derivatives Chemical class 0.000 description 3
- 150000008378 aryl ethers Chemical class 0.000 description 3
- 235000019445 benzyl alcohol Nutrition 0.000 description 3
- ADRVNXBAWSRFAJ-UHFFFAOYSA-N catechin Natural products OC1Cc2cc(O)cc(O)c2OC1c3ccc(O)c(O)c3 ADRVNXBAWSRFAJ-UHFFFAOYSA-N 0.000 description 3
- 235000005487 catechin Nutrition 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 229950001002 cianidanol Drugs 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 3
- 239000003431 cross linking reagent Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 150000002170 ethers Chemical class 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 150000002576 ketones Chemical class 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000011342 resin composition Substances 0.000 description 3
- 150000003333 secondary alcohols Chemical class 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- JPFCOVZKLAXXOE-XBNSMERZSA-N (3r)-2-(3,5-dihydroxy-4-methoxyphenyl)-8-[(2r,3r,4r)-3,5,7-trihydroxy-2-(4-hydroxyphenyl)-3,4-dihydro-2h-chromen-4-yl]-3,4-dihydro-2h-chromene-3,5,7-triol Chemical compound C1=C(O)C(OC)=C(O)C=C1C1[C@H](O)CC(C(O)=CC(O)=C2[C@H]3C4=C(O)C=C(O)C=C4O[C@@H]([C@@H]3O)C=3C=CC(O)=CC=3)=C2O1 JPFCOVZKLAXXOE-XBNSMERZSA-N 0.000 description 2
- ALSTYHKOOCGGFT-KTKRTIGZSA-N (9Z)-octadecen-1-ol Chemical compound CCCCCCCC\C=C/CCCCCCCCO ALSTYHKOOCGGFT-KTKRTIGZSA-N 0.000 description 2
- HTQNYBBTZSBWKL-UHFFFAOYSA-N 2,3,4-trihydroxbenzophenone Chemical compound OC1=C(O)C(O)=CC=C1C(=O)C1=CC=CC=C1 HTQNYBBTZSBWKL-UHFFFAOYSA-N 0.000 description 2
- WXTMDXOMEHJXQO-UHFFFAOYSA-N 2,5-dihydroxybenzoic acid Chemical compound OC(=O)C1=CC(O)=CC=C1O WXTMDXOMEHJXQO-UHFFFAOYSA-N 0.000 description 2
- IEORSVTYLWZQJQ-UHFFFAOYSA-N 2-(2-nonylphenoxy)ethanol Chemical class CCCCCCCCCC1=CC=CC=C1OCCO IEORSVTYLWZQJQ-UHFFFAOYSA-N 0.000 description 2
- JESXATFQYMPTNL-UHFFFAOYSA-N 2-ethenylphenol Chemical compound OC1=CC=CC=C1C=C JESXATFQYMPTNL-UHFFFAOYSA-N 0.000 description 2
- XIMADJWJJOMVID-UHFFFAOYSA-N 2-phenyl-3,4-dihydro-2h-chromene-3,4-diol Chemical compound OC1C(O)C2=CC=CC=C2OC1C1=CC=CC=C1 XIMADJWJJOMVID-UHFFFAOYSA-N 0.000 description 2
- YTAQZPGBTPDBPW-UHFFFAOYSA-N 2-phenylchromene-3,4-dione Chemical compound O1C2=CC=CC=C2C(=O)C(=O)C1C1=CC=CC=C1 YTAQZPGBTPDBPW-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- JYCQQPHGFMYQCF-UHFFFAOYSA-N 4-tert-Octylphenol monoethoxylate Chemical class CC(C)(C)CC(C)(C)C1=CC=C(OCCO)C=C1 JYCQQPHGFMYQCF-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- DQFBYFPFKXHELB-UHFFFAOYSA-N Chalcone Natural products C=1C=CC=CC=1C(=O)C=CC1=CC=CC=C1 DQFBYFPFKXHELB-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- RGSFGYAAUTVSQA-UHFFFAOYSA-N Cyclopentane Chemical compound C1CCCC1 RGSFGYAAUTVSQA-UHFFFAOYSA-N 0.000 description 2
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 2
- CITFYDYEWQIEPX-UHFFFAOYSA-N Flavanol Natural products O1C2=CC(OCC=C(C)C)=CC(O)=C2C(=O)C(O)C1C1=CC=C(O)C=C1 CITFYDYEWQIEPX-UHFFFAOYSA-N 0.000 description 2
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical compound C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- 229910003271 Ni-Fe Inorganic materials 0.000 description 2
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical class C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 2
- 229920001991 Proanthocyanidin Polymers 0.000 description 2
- ZVOLCUVKHLEPEV-UHFFFAOYSA-N Quercetagetin Natural products C1=C(O)C(O)=CC=C1C1=C(O)C(=O)C2=C(O)C(O)=C(O)C=C2O1 ZVOLCUVKHLEPEV-UHFFFAOYSA-N 0.000 description 2
- HWTZYBCRDDUBJY-UHFFFAOYSA-N Rhynchosin Natural products C1=C(O)C(O)=CC=C1C1=C(O)C(=O)C2=CC(O)=C(O)C=C2O1 HWTZYBCRDDUBJY-UHFFFAOYSA-N 0.000 description 2
- 229920002125 Sokalan® Polymers 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- GAMYVSCDDLXAQW-AOIWZFSPSA-N Thermopsosid Natural products O(C)c1c(O)ccc(C=2Oc3c(c(O)cc(O[C@H]4[C@H](O)[C@@H](O)[C@H](O)[C@H](CO)O4)c3)C(=O)C=2)c1 GAMYVSCDDLXAQW-AOIWZFSPSA-N 0.000 description 2
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 2
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical compound C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 150000001334 alicyclic compounds Chemical class 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 239000002280 amphoteric surfactant Substances 0.000 description 2
- 229930014669 anthocyanidin Natural products 0.000 description 2
- 150000001452 anthocyanidin derivatives Chemical class 0.000 description 2
- 235000008758 anthocyanidins Nutrition 0.000 description 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 2
- OMUOMODZGKSORV-UVTDQMKNSA-N aurone Chemical compound O1C2=CC=CC=C2C(=O)\C1=C\C1=CC=CC=C1 OMUOMODZGKSORV-UVTDQMKNSA-N 0.000 description 2
- 229930015036 aurone Natural products 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229960003237 betaine Drugs 0.000 description 2
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 125000002091 cationic group Chemical group 0.000 description 2
- 235000005513 chalcones Nutrition 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000007334 copolymerization reaction Methods 0.000 description 2
- 150000003983 crown ethers Chemical class 0.000 description 2
- 150000004292 cyclic ethers Chemical class 0.000 description 2
- 150000001924 cycloalkanes Chemical class 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- PXLWOFBAEVGBOA-UHFFFAOYSA-N dihydrochalcone Natural products OC1C(O)C(O)C(CO)OC1C1=C(O)C=CC(C(=O)CC(O)C=2C=CC(O)=CC=2)=C1O PXLWOFBAEVGBOA-UHFFFAOYSA-N 0.000 description 2
- QGGZBXOADPVUPN-UHFFFAOYSA-N dihydrochalcone Chemical compound C=1C=CC=CC=1C(=O)CCC1=CC=CC=C1 QGGZBXOADPVUPN-UHFFFAOYSA-N 0.000 description 2
- LQZZUXJYWNFBMV-UHFFFAOYSA-N dodecan-1-ol Chemical compound CCCCCCCCCCCCO LQZZUXJYWNFBMV-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 208000023414 familial retinal arterial macroaneurysm Diseases 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 229930182497 flavan-3-ol Natural products 0.000 description 2
- 235000011987 flavanols Nutrition 0.000 description 2
- 229930003944 flavone Natural products 0.000 description 2
- 150000002212 flavone derivatives Chemical class 0.000 description 2
- 235000011949 flavones Nutrition 0.000 description 2
- HVQAJTFOCKOKIN-UHFFFAOYSA-N flavonol Natural products O1C2=CC=CC=C2C(=O)C(O)=C1C1=CC=CC=C1 HVQAJTFOCKOKIN-UHFFFAOYSA-N 0.000 description 2
- 150000007946 flavonol Chemical class 0.000 description 2
- 235000011957 flavonols Nutrition 0.000 description 2
- 229940074391 gallic acid Drugs 0.000 description 2
- 235000004515 gallic acid Nutrition 0.000 description 2
- 150000002391 heterocyclic compounds Chemical class 0.000 description 2
- SHFJWMWCIHQNCP-UHFFFAOYSA-M hydron;tetrabutylazanium;sulfate Chemical compound OS([O-])(=O)=O.CCCC[N+](CCCC)(CCCC)CCCC SHFJWMWCIHQNCP-UHFFFAOYSA-M 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- GOMNOOKGLZYEJT-UHFFFAOYSA-N isoflavone Chemical compound C=1OC2=CC=CC=C2C(=O)C=1C1=CC=CC=C1 GOMNOOKGLZYEJT-UHFFFAOYSA-N 0.000 description 2
- CJWQYWQDLBZGPD-UHFFFAOYSA-N isoflavone Natural products C1=C(OC)C(OC)=CC(OC)=C1C1=COC2=C(C=CC(C)(C)O3)C3=C(OC)C=C2C1=O CJWQYWQDLBZGPD-UHFFFAOYSA-N 0.000 description 2
- 235000008696 isoflavones Nutrition 0.000 description 2
- MWDZOUNAPSSOEL-UHFFFAOYSA-N kaempferol Natural products OC1=C(C(=O)c2cc(O)cc(O)c2O1)c3ccc(O)cc3 MWDZOUNAPSSOEL-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 150000001455 metallic ions Chemical class 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 229940055577 oleyl alcohol Drugs 0.000 description 2
- XMLQWXUVTXCDDL-UHFFFAOYSA-N oleyl alcohol Natural products CCCCCCC=CCCCCCCCCCCO XMLQWXUVTXCDDL-UHFFFAOYSA-N 0.000 description 2
- BVJSUAQZOZWCKN-UHFFFAOYSA-N p-hydroxybenzyl alcohol Chemical compound OCC1=CC=C(O)C=C1 BVJSUAQZOZWCKN-UHFFFAOYSA-N 0.000 description 2
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910000889 permalloy Inorganic materials 0.000 description 2
- 239000013034 phenoxy resin Substances 0.000 description 2
- 229920006287 phenoxy resin Polymers 0.000 description 2
- 150000004714 phosphonium salts Chemical class 0.000 description 2
- 150000008442 polyphenolic compounds Polymers 0.000 description 2
- RKCAIXNGYQCCAL-UHFFFAOYSA-N porphin Chemical compound N1C(C=C2N=C(C=C3NC(=C4)C=C3)C=C2)=CC=C1C=C1C=CC4=N1 RKCAIXNGYQCCAL-UHFFFAOYSA-N 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 2
- 229940079877 pyrogallol Drugs 0.000 description 2
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 2
- 235000005875 quercetin Nutrition 0.000 description 2
- 229960001285 quercetin Drugs 0.000 description 2
- 229960001755 resorcinol Drugs 0.000 description 2
- 229960004889 salicylic acid Drugs 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 229920001864 tannin Polymers 0.000 description 2
- 239000001648 tannin Substances 0.000 description 2
- 235000018553 tannin Nutrition 0.000 description 2
- DQFBYFPFKXHELB-VAWYXSNFSA-N trans-chalcone Chemical compound C=1C=CC=CC=1C(=O)\C=C\C1=CC=CC=C1 DQFBYFPFKXHELB-VAWYXSNFSA-N 0.000 description 2
- VHBFFQKBGNRLFZ-UHFFFAOYSA-N vitamin p Natural products O1C2=CC=CC=C2C(=O)C=C1C1=CC=CC=C1 VHBFFQKBGNRLFZ-UHFFFAOYSA-N 0.000 description 2
- PXJACNDVRNAFHD-UHFFFAOYSA-N (2-methoxyphenyl)methanamine Chemical compound COC1=CC=CC=C1CN PXJACNDVRNAFHD-UHFFFAOYSA-N 0.000 description 1
- PJMXUSNWBKGQEZ-UHFFFAOYSA-N (4-hydroxyphenyl) 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC1=CC=C(O)C=C1 PJMXUSNWBKGQEZ-UHFFFAOYSA-N 0.000 description 1
- NIUHGYUFFPSEOW-UHFFFAOYSA-N (4-hydroxyphenyl) prop-2-enoate Chemical compound OC1=CC=C(OC(=O)C=C)C=C1 NIUHGYUFFPSEOW-UHFFFAOYSA-N 0.000 description 1
- SJHPCNCNNSSLPL-CSKARUKUSA-N (4e)-4-(ethoxymethylidene)-2-phenyl-1,3-oxazol-5-one Chemical compound O1C(=O)C(=C/OCC)\N=C1C1=CC=CC=C1 SJHPCNCNNSSLPL-CSKARUKUSA-N 0.000 description 1
- JYDIJFKNXHPWBJ-FBBRVDCYSA-M (s)-[(2r,4s,5r)-1-benzyl-5-ethenyl-1-azoniabicyclo[2.2.2]octan-2-yl]-(6-methoxyquinolin-4-yl)methanol;chloride Chemical compound [Cl-].C([C@H]([C@H](C1)C=C)C[C@@H]2[C@@H](O)C3=CC=NC4=CC=C(C=C43)OC)C[N+]21CC1=CC=CC=C1 JYDIJFKNXHPWBJ-FBBRVDCYSA-M 0.000 description 1
- ITWBWJFEJCHKSN-UHFFFAOYSA-N 1,4,7-triazonane Chemical compound C1CNCCNCCN1 ITWBWJFEJCHKSN-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- HIXDQWDOVZUNNA-UHFFFAOYSA-N 2-(3,4-dimethoxyphenyl)-5-hydroxy-7-methoxychromen-4-one Chemical compound C=1C(OC)=CC(O)=C(C(C=2)=O)C=1OC=2C1=CC=C(OC)C(OC)=C1 HIXDQWDOVZUNNA-UHFFFAOYSA-N 0.000 description 1
- KIZQNNOULOCVDM-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCO KIZQNNOULOCVDM-UHFFFAOYSA-M 0.000 description 1
- 125000003504 2-oxazolinyl group Chemical group O1C(=NCC1)* 0.000 description 1
- MGADZUXDNSDTHW-UHFFFAOYSA-N 2H-pyran Chemical compound C1OC=CC=C1 MGADZUXDNSDTHW-UHFFFAOYSA-N 0.000 description 1
- 125000003143 4-hydroxybenzyl group Chemical group [H]C([*])([H])C1=C([H])C([H])=C(O[H])C([H])=C1[H] 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- 206010010071 Coma Diseases 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- OKIZCWYLBDKLSU-UHFFFAOYSA-M N,N,N-Trimethylmethanaminium chloride Chemical compound [Cl-].C[N+](C)(C)C OKIZCWYLBDKLSU-UHFFFAOYSA-M 0.000 description 1
- XVNRSQASUCMHGX-UHFFFAOYSA-N O[Si](O)(O)O.OP(O)(O)=O Chemical compound O[Si](O)(O)O.OP(O)(O)=O XVNRSQASUCMHGX-UHFFFAOYSA-N 0.000 description 1
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 description 1
- 229920002845 Poly(methacrylic acid) Polymers 0.000 description 1
- 229920002873 Polyethylenimine Polymers 0.000 description 1
- NPYPAHLBTDXSSS-UHFFFAOYSA-N Potassium ion Chemical compound [K+] NPYPAHLBTDXSSS-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- 238000006959 Williamson synthesis reaction Methods 0.000 description 1
- VZPPHXVFMVZRTE-UHFFFAOYSA-N [Kr]F Chemical compound [Kr]F VZPPHXVFMVZRTE-UHFFFAOYSA-N 0.000 description 1
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 125000002777 acetyl group Chemical group [H]C([H])([H])C(*)=O 0.000 description 1
- 125000004018 acid anhydride group Chemical group 0.000 description 1
- 239000003377 acid catalyst Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- 125000004448 alkyl carbonyl group Chemical group 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- SHOMMGQAMRXRRK-UHFFFAOYSA-N bicyclo[3.1.1]heptane Chemical compound C1C2CC1CCC2 SHOMMGQAMRXRRK-UHFFFAOYSA-N 0.000 description 1
- OCOMKVVSXFCESC-UHFFFAOYSA-N bis-(4-hydroxybenzyl)ether Chemical compound C1=CC(O)=CC=C1COCC1=CC=C(O)C=C1 OCOMKVVSXFCESC-UHFFFAOYSA-N 0.000 description 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 150000001720 carbohydrates Chemical class 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- DVBJBNKEBPCGSY-UHFFFAOYSA-M cetylpyridinium bromide Chemical compound [Br-].CCCCCCCCCCCCCCCC[N+]1=CC=CC=C1 DVBJBNKEBPCGSY-UHFFFAOYSA-M 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 239000007859 condensation product Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate group Chemical group [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 150000001923 cyclic compounds Chemical class 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 238000005886 esterification reaction Methods 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 238000006266 etherification reaction Methods 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- VPVSTMAPERLKKM-UHFFFAOYSA-N glycoluril Chemical compound N1C(=O)NC2NC(=O)NC21 VPVSTMAPERLKKM-UHFFFAOYSA-N 0.000 description 1
- DMEGYFMYUHOHGS-UHFFFAOYSA-N heptamethylene Natural products C1CCCCCC1 DMEGYFMYUHOHGS-UHFFFAOYSA-N 0.000 description 1
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 1
- 150000002402 hexoses Chemical class 0.000 description 1
- 125000002768 hydroxyalkyl group Chemical group 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000002563 ionic surfactant Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 125000000468 ketone group Chemical group 0.000 description 1
- 125000000686 lactone group Chemical group 0.000 description 1
- 150000002596 lactones Chemical class 0.000 description 1
- 238000004811 liquid chromatography Methods 0.000 description 1
- 125000002950 monocyclic group Chemical group 0.000 description 1
- QWLISCJHYITNQF-UHFFFAOYSA-N n-methoxy-1-phenylmethanamine Chemical compound CONCC1=CC=CC=C1 QWLISCJHYITNQF-UHFFFAOYSA-N 0.000 description 1
- NCIAGQNZQHYKGR-UHFFFAOYSA-N naphthalene-1,2,3-triol Chemical compound C1=CC=C2C(O)=C(O)C(O)=CC2=C1 NCIAGQNZQHYKGR-UHFFFAOYSA-N 0.000 description 1
- NXPPAOGUKPJVDI-UHFFFAOYSA-N naphthalene-1,2-diol Chemical compound C1=CC=CC2=C(O)C(O)=CC=C21 NXPPAOGUKPJVDI-UHFFFAOYSA-N 0.000 description 1
- QVEIBLDXZNGPHR-UHFFFAOYSA-N naphthalene-1,4-dione;diazide Chemical compound [N-]=[N+]=[N-].[N-]=[N+]=[N-].C1=CC=C2C(=O)C=CC(=O)C2=C1 QVEIBLDXZNGPHR-UHFFFAOYSA-N 0.000 description 1
- CIFWTDOEMTUUAO-UHFFFAOYSA-N naphthofluorescein diacetate Chemical compound O1C(=O)C2=CC=CC=C2C21C(C=CC=1C3=CC=C(OC(C)=O)C=1)=C3OC1=C2C=CC2=CC(OC(=O)C)=CC=C21 CIFWTDOEMTUUAO-UHFFFAOYSA-N 0.000 description 1
- 229920000847 nonoxynol Polymers 0.000 description 1
- UMRZSTCPUPJPOJ-KNVOCYPGSA-N norbornane Chemical compound C1C[C@H]2CC[C@@H]1C2 UMRZSTCPUPJPOJ-KNVOCYPGSA-N 0.000 description 1
- 229920002113 octoxynol Polymers 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 150000002972 pentoses Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000083 poly(allylamine) Polymers 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 125000003367 polycyclic group Chemical group 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 description 1
- 229910001414 potassium ion Inorganic materials 0.000 description 1
- OIGNJSKKLXVSLS-VWUMJDOOSA-N prednisolone Chemical compound O=C1C=C[C@]2(C)[C@H]3[C@@H](O)C[C@](C)([C@@](CC4)(O)C(=O)CO)[C@@H]4[C@@H]3CCC2=C1 OIGNJSKKLXVSLS-VWUMJDOOSA-N 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 150000003431 steroids Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229940124530 sulfonamide Drugs 0.000 description 1
- 150000003456 sulfonamides Chemical class 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- IBWGNZVCJVLSHB-UHFFFAOYSA-M tetrabutylphosphanium;chloride Chemical compound [Cl-].CCCC[P+](CCCC)(CCCC)CCCC IBWGNZVCJVLSHB-UHFFFAOYSA-M 0.000 description 1
- MRYQZMHVZZSQRT-UHFFFAOYSA-M tetramethylazanium;acetate Chemical compound CC([O-])=O.C[N+](C)(C)C MRYQZMHVZZSQRT-UHFFFAOYSA-M 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- HUFYWBBEKQHPIC-HNCPQSOCSA-M trimethyl-[(2r)-1-oxo-1-phenylpropan-2-yl]azanium;bromide Chemical compound [Br-].C[N+](C)(C)[C@H](C)C(=O)C1=CC=CC=C1 HUFYWBBEKQHPIC-HNCPQSOCSA-M 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
- G03F7/2024—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure of the already developed image
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0275—Photolithographic processes using lasers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/42—Simultaneous manufacture of periphery and memory cells
- H10B41/43—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor
- H10B41/48—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor with a tunnel dielectric layer also being used as part of the peripheral transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
Definitions
- the present invention relates to a resist pattern thickening material, which is applied over a resist pattern that is formed in manufacturing a semiconductor device and is capable of thickening the resist pattern, and which may form a fine space pattern that exceeds exposure limits of light sources of available exposure devices.
- the present invention also relates to a process for forming a resist pattern, a semiconductor device, and a process for manufacturing the semiconductor device that utilize the resist pattern thickening material respectively.
- a lithographic technique is extremely important in forming fine wiring patterns.
- a substrate to be processed on which a thin film is formed is coated by a resist film, is selectively exposed, and thereafter, is developed to thereby form a resist pattern. Dry etching is carried out by using the resist pattern as a mask, and thereafter, by removing the resist pattern, the desired pattern is obtained.
- resist pattern thickening material capable of forming a fine space pattern.
- resist pattern thickening material capable of forming a fine space pattern.
- JP-A Japanese Patent Application Laid-Open
- resist patterns are formed by exposing a resist of positive resist or negative resist using KrF (krypton fluoride) excimer laser light of wavelength 248 nm which is deep ultraviolet light as the exposure light.
- a coated film is provided so as to cover the resist pattern.
- the coated film and the resist pattern are made to interact at the interface thereof using the residual acid within the material of the resist pattern, and the resist pattern is thickened (hereinafter, the thickening of the resist pattern being sometimes referred to as “swelling”). In this way, the distance between the resist patterns is shortened, and a fine space pattern is formed.
- a desired pattern e.g. wiring pattern having the same dimension as the space pattern is formed.
- the KrF resist for use is formed of an aromatic resin composition including a novolak resin, naphthoquinonediazide resin or the like.
- An aromatic ring contained in the aromatic resin composition allows KrF excimer laser light (wavelength: 248 nm) to pass through, but absorbs ArF excimer laser light (wavelength: 193 nm) having a shorter wavelength than the KrF excimer laser light and does not allow the ArF excimer laser light to pass through. Therefore, when the KrF resist is used, ArF excimer laser light cannot be used as the exposure light, which makes it impossible to from a finer wiring pattern, etc.
- the resist swelling material is effective for thickening or swelling the KrF resist but not for thickening or swelling the ArF resist.
- the resist swelling material has low etch resistance itself.
- ArF resist pattern having low etch resistance is swelled, the same dimension as the swelled pattern cannot be patterned on the substrate to be processed.
- KrF resist having relatively satisfactory etch resistance is swelled, in such cases where etching condition is severe, where the KrF resist pattern is fine, where the resist film is thin, or the like, there is a problem that etching cannot be precisely carried out and pattern having the same dimension as the swelled pattern cannot be obtained.
- the aforementioned resist swelling material does not efficiently work on ArF resist pattern.
- the present inventors have proposed a resist pattern thickening material capable of forming a fine pattern by improving affinity with the ArF resist pattern caused by a surfactant (JP-A No. 2003-131400).
- the composition of this resist pattern thickening material sometimes causes dependency on the pattern size before thickening, that is, when the pattern size before thickening increases, the reduced amount of the pattern size after thickening may increase in proportion to the increase.
- the resist pattern thickening material was used for a line-space pattern, on a wiring layer of LOGIC LSI where various sizes of resist patterns are utilized, the burden on designing an exposure mask could not fully be alleviated.
- the current situation is that there has not yet been developed a technique which can use ArF excimer laser light as the light source of an exposure device during patterning, which can sufficiently thicken ArF resist pattern or the like that cannot be thickened by using the aforementioned resist swelling material used in the RELACS technique, and which can easily form a fine space pattern or a wiring pattern at low cost. Therefore, it is desired that such technique be developed.
- An object of the present invention is to provide a resist pattern thickening material, which can utilize ArF excimer laser light as exposure light during patterning; which, when applied over a resist pattern to be thickened, can efficiently thicken the resist pattern to be thickened, e.g., in form of lines and spaces pattern, regardless of the size of the resist pattern to be thickened; which has high etch resistance; and which is suited for forming a fine space pattern of resist, exceeding exposure limits or resolution limits of light sources of available exposure devices at low cost, easily and efficiently.
- Another object of the present invention is to provide a process for forming a resist pattern which, during patterning a resist pattern to be thickened, can utilize ArF excimer laser light as a light source; which can thicken a resist pattern to be thickened, e.g., in form of lines and spaces pattern, regardless of the size of the resist pattern; and which is suited for forming a fine space pattern of resist, exceeding exposure limits or resolution limits of light sources of available exposure devices at low cost, easily and efficiently.
- Yet another object of the present invention is to provide a process for manufacturing a semiconductor device in which, during patterning a resist pattern to be thickened, ArF excimer laser light can be utilized as a light source; a fine space pattern of resist, exceeding exposure limits or resolution limits of light sources of available exposure devices, can be formed; and high-performance semiconductor devices having fine wiring patterns formed by using the space pattern of resist can be efficiently mass produced, and is to provide a high-performance semiconductor which is manufactured by the process for manufacturing a semiconductor device and has fine wiring patterns.
- the present invention is based on such experiences or discoveries; how to solve aforesaid problems is described in attached claims.
- the resist pattern thickening material of the present invention includes a resin and a compound represented by the general formula (1):
- X is a functional group represented by the following structural formula (1).
- Y represents at least any one of a hydroxyl group, an amino group, an amino group substituted by an alkyl group, an alkoxy group, an alkoxycarbonyl group and an alkyl group, and the number of the substitution is an integer of 0 to 3.
- m represents an integer of 1 or more and “n” represents an integer of 0 or more:
- R 1 and R 2 may be the same or different, and each represent a hydrogen atom or a substituent group.
- Z represents at least any one of a hydroxyl group, an amino group, an amino group substituted by an alkyl group, and an alkoxy group, and the number of the substitution is an integer of 0 to 3.
- the portions of the applied resist pattern thickening material in a vicinity of the interface with the resist pattern to be thickened infiltrate into the resist pattern and cause an interaction, i.e., mixing, with the material of the resist pattern to be thickened.
- a surface layer or mixing layer, where the resist pattern thickening material and the resist pattern are mixed is efficiently formed on the surface of the resist pattern as the inner layer.
- the resist pattern to be thickened is efficiently thickened by the resist pattern thickening material.
- the resist pattern thickened in this way (hereinafter sometimes referring to as “thickened resist pattern”) is thickened uniformly by the resist pattern thickening material.
- the space pattern of resist formed by the thickened resist pattern a fine space pattern of resist has a fine structure, exceeding exposure limits or resolution limits.
- the term “space pattern” is hereby defined as a hole, trench, recess, or any other empty space that is formed by developing a resist. Since the resist pattern thickening material of the present invention includes the compound represented by the general formula (1), uniform thickening effect is derived without being affected by the types of resist material or sizes of the resist pattern. Further, since the compound represented by the general formula (1) includes an aromatic ring, the resist pattern thickening material of the present invention has high etch resistance. Thus, the resist pattern thickening material of the present invention can be suitably utilized for forming a resist pattern, such as a lines and spaces pattern, on a wiring layer of LOGIC LSI where various sizes of resist patterns are utilized.
- the process for forming a resist pattern of the present invention includes forming a resist pattern to be thickened, and then applying a resist pattern thickening material of the present invention so as to cover the surface of the resist pattern to be thickened.
- a resist pattern to be thickened is formed and then, when the resist pattern thickening material is applied over the resist pattern to be thickened, the portions of the applied resist pattern thickening material in a vicinity of the interface with the resist pattern to be thickened infiltrate into the resist pattern and cause an interaction or mixing with the material of the resist pattern.
- a surface layer or mixing layer where the resist pattern thickening material and the resist pattern are mixed, is formed on the surface of the resist pattern as the inner layer.
- the resulting thickened resist pattern is uniformly thickened by the resist pattern thickening material.
- the space pattern of resist formed by the thickened resist pattern a fine space pattern of resist has a fine structure, exceeding exposure limits or resolution limits.
- the resist pattern thickening material includes the compound represented by the general formula (1), uniform thickening effect is derived without being affected by the types of resist material or sizes of the resist pattern.
- the aromatic ring in the compound represented by the general formula (1) provides high etch resistance.
- the process for forming a resist pattern can be suitably utilized for forming a resist pattern, such as a line-space pattern, on a wiring layer of LOGIC LSI where not only a contact hole pattern, but also various sizes of resist patterns are utilized.
- the process for manufacturing a semiconductor device of the present invention includes a step of forming a thickened resist pattern on a surface of a workpiece using the process for forming a resist pattern of the present invention, namely, a step of forming a thickened resist pattern by forming a resist pattern to be thickened on a surface of a workpiece, and then by applying a resist pattern thickening material so as to cover the surface of the resist pattern to be thickened; and a step of patterning the surface of the workpiece by etching the surface of the workpiece using the thickened resist pattern as a mask.
- a resist pattern to be thickened is formed on the surface of the workpiece serving as a subject on which wiring patterns, etc. is formed, and then the resist pattern thickening material of the present invention is applied so as to cover the surface of the resist pattern to be thickened. Then, the portions of the applied resist pattern thickening material in a vicinity of the interface with the resist pattern to be thickened infiltrate into the resist pattern and cause an interaction or mixing with the material of the resist pattern.
- a surface layer or mixing layer where the resist pattern thickening material and the resist pattern are mixed, is formed on the surface of the resist pattern as the inner layer.
- the resulting thickened resist pattern is uniformly thickened by the resist pattern thickening material.
- the space pattern of resist formed by the thickened resist pattern has a fine structure, exceeding exposure limits or resolution limits.
- the resist pattern thickening material includes the compound represented by the general formula (1), uniform thickening effect is derived without being affected by the types of resist material or sizes of the resist pattern. Further, the aromatic ring in the compound represented by the general formula (1) provides high etch resistance.
- thickened resist patterns such as a line-space pattern, on a wiring layer of LOGIC LSI where not only a contact hole pattern, but also various sizes of resist patterns are utilized, can be formed easily and precisely.
- the step of patterning by etching the surface of the workpiece using the thickened resist pattern formed by the step of forming a thickened resist pattern as a mask, the surface of the workpiece is patterned finely and precisely with accurate dimension, thus high-quality and high performance semiconductor devices can be produced efficiently having a wiring pattern with fine, precise, and accurate dimension.
- the semiconductor device of the present invention is manufactured by the process for manufacturing a semiconductor device of the present invention.
- the semiconductor device has patterns, for example, wiring patterns, with fine, precise, and accurate dimension, and is high quality and high performance.
- FIG. 1 is a schematic diagram for explaining one example of the mechanism of thickening a resist pattern to be thickened by using a resist pattern thickening material of the present invention, and showing the state where the resist pattern thickening material is applied over the surface of the resist pattern to be thickened.
- FIG. 2 is a schematic diagram for explaining one example of the mechanism of thickening a resist pattern to be thickened by using a resist pattern thickening material of the present invention, and showing the state where the resist pattern thickening material infiltrates into the surface of the resist pattern to be thickened.
- FIG. 3 is a schematic diagram for explaining one example of the mechanism of thickening a resist pattern to be thickened by using a resist pattern thickening material of the present invention, and showing the state where the resist pattern to be thickened is thickened by the resist pattern thickening material, thereby forming a resist pattern.
- FIG. 4 is a schematic diagram for explaining an example of a process for forming a resist pattern of the present invention, and showing the state where a resist film is formed.
- FIG. 5A is a schematic diagram for explaining an example of a process for forming a resist pattern of the present invention, and showing the state where the resist film is subjected to a patterning, thereby forming a resist pattern to be thickened.
- FIG. 5B is a schematic diagram for explaining an example of a process for forming a resist pattern of the present invention, and showing the state where the entire surface of a resist pattern to be thickened is irradiated with exposure light.
- FIG. 6 is a schematic diagram for explaining an example of a process for forming a resist pattern of the present invention, and showing the state where the resist pattern thickening material is applied over the surface of the resist pattern to be thickened.
- FIG. 7 is a schematic diagram for explaining an example of a process for forming a resist pattern of the present invention, and showing the state where a mixing is occurred at the vicinity of the surface of the resist pattern to be thickened and the resist pattern thickening material infiltrates into the resist pattern to be thickened.
- FIG. 8 is a schematic diagram for explaining an example of a process for forming a resist pattern of the present invention, and showing the state where the resist pattern thickening material is developed.
- FIG. 9 is a schematic diagram for explaining an example of a process for manufacturing a semiconductor device of the present invention, and showing the state where an interlayer dielectric film is formed on a silicon substrate.
- FIG. 10 is a schematic diagram for explaining an example of a process for manufacturing a semiconductor device of the present invention, and showing the state where a titanium film is formed on the interlayer dielectric film.
- FIG. 11 is a schematic diagram for explaining an example of a process for manufacturing a semiconductor device of the present invention, and showing the state where a resist film is formed on the titanium film and a hole pattern is formed on the titanium film.
- FIG. 12 is a schematic diagram for explaining an example of a process for manufacturing a semiconductor device of the present invention, and showing the state where the hole pattern is also formed on the titanium film.
- FIG. 13 is a schematic diagram for explaining an example of a process for manufacturing a semiconductor device of the present invention, and showing the state where a Cu film is formed on the interlayer dielectric film having the hole pattern.
- FIG. 14 is a schematic diagram for explaining an example of a process for manufacturing a semiconductor device of the present invention, and showing the state where the copper is removed except the layer on the hole pattern of the interlayer dielectric film.
- FIG. 15 is a schematic diagram for explaining an example of a process for manufacturing a semiconductor device of the present invention, and showing the state where an interlayer dielectric film is formed on the Cu plug formed inside of the hole pattern, and on the interlayer dielectric film.
- FIG. 16 is a schematic diagram for explaining an example of a process for manufacturing a semiconductor device of the present invention, and showing the state where a hole pattern is formed on the interlayer dielectric film as a surface layer and a Cu plug is formed therein.
- FIG. 17 is a schematic diagram for explaining an example of a process for manufacturing a semiconductor device of the present invention, and showing the state where a three-layered wiring is formed.
- FIG. 18 is a top view for explaining a FLASH EPROM which is one example of a semiconductor device of the present invention.
- FIG. 19 is a top view for explaining a FLASH EPROM which is another example of a semiconductor device of the present invention.
- FIG. 20 is a cross-sectional schematic diagram for explaining a process for manufacturing the FLASH EPROM which is an example of the process for manufacturing a semiconductor device of the present invention.
- FIG. 21 is a cross-sectional schematic diagram for explaining a process for manufacturing the FLASH EPROM which is an example of the process for manufacturing a semiconductor device of the present invention, and showing a step after the step shown in FIG. 20 .
- FIG. 22 is a cross-sectional schematic diagram for explaining a process for manufacturing the FLASH EPROM which is an example of the process for manufacturing a semiconductor device of the present invention, and showing a step after the step shown in FIG. 21 .
- FIG. 23 is a cross-sectional schematic diagram for explaining a process for manufacturing the FLASH EPROM which is an example of the process for manufacturing a semiconductor device of the present invention, and showing a step after the step shown in FIG. 22 .
- FIG. 24 is a cross-sectional schematic diagram for explaining a process for manufacturing the FLASH EPROM which is an example of the process for manufacturing a semiconductor device of the present invention, and showing a step after the step shown in FIG. 23 .
- FIG. 25 is a cross-sectional schematic diagram for explaining a process for manufacturing the FLASH EPROM which is an example of the process for manufacturing a semiconductor device of the present invention, and showing a step after the step shown in FIG. 24 .
- FIG. 26 is a cross-sectional schematic diagram for explaining a process for manufacturing the FLASH EPROM which is an example of the process for manufacturing a semiconductor device of the present invention, and showing a step after the step shown in FIG. 25 .
- FIG. 27 is a cross-sectional schematic diagram for explaining a process for manufacturing the FLASH EPROM which is an example of the process for manufacturing a semiconductor device of the present invention, and showing a step after the step shown in FIG. 26 .
- FIG. 28 is a cross-sectional schematic diagram for explaining a process for manufacturing the FLASH EPROM which is an example of the process for manufacturing a semiconductor device of the present invention, and showing a step after the step shown in FIG. 27 .
- FIG. 29 is a cross-sectional schematic diagram for explaining the process for manufacturing the FLASH EPROM which is another example of the process for manufacturing a semiconductor device of the present invention.
- FIG. 30 is a cross-sectional schematic diagram for explaining the process for manufacturing the FLASH EPROM which is another example of the process for manufacturing a semiconductor device of the present invention, and showing a step after the step shown in FIG. 29 .
- FIG. 31 is a cross-sectional schematic diagram for explaining the process for manufacturing the FLASH EPROM which is another example of the process for manufacturing a semiconductor device of the present invention, and showing a step after the step shown in FIG. 30 .
- FIG. 32 is a cross-sectional schematic diagram for explaining the process for manufacturing the FLASH EPROM which is yet another example of the process for manufacturing a semiconductor device of the present invention.
- FIG. 33 is a cross-sectional schematic diagram for explaining the process for manufacturing the FLASH EPROM which is yet another example of the process for manufacturing a semiconductor device of the present invention, and showing a step after the step shown in FIG. 32 .
- FIG. 34 is a cross-sectional schematic diagram for explaining the process for manufacturing the FLASH EPROM which is yet another example of the process for manufacturing a semiconductor device of the present invention, and showing a step after the step shown in FIG. 33 .
- FIG. 35 is a cross-sectional schematic diagram for explaining an example in which a resist pattern, which has been thickened by using the resist pattern thickening material of the present invention, is applied to the manufacturing of a recording head.
- FIG. 36 is a cross-sectional schematic diagram for explaining an example in which a resist pattern, which has been thickened by using the resist pattern thickening material of the present invention, is applied to the manufacturing of a recording head, and showing a step after the step shown in FIG. 35 .
- FIG. 37 is a cross-sectional schematic diagram for explaining an example in which a resist pattern, which has been thickened by using the resist pattern thickening material of the present invention, is applied to the manufacturing of a recording head, and showing a step after the step shown in FIG. 36 .
- FIG. 38 is a cross-sectional schematic diagram for explaining an example in which a resist pattern, which has been thickened by using the resist pattern thickening material of the present invention, is applied to the manufacturing of a recording head, and showing a step after the step shown in FIG. 37 .
- FIG. 39 is a cross-sectional schematic diagram for explaining an example in which a resist pattern, which has been thickened by using the resist pattern thickening material of the present invention, is applied to the manufacturing of a recording head, and showing a step after the step shown in FIG. 38 .
- FIG. 40 is a cross-sectional schematic diagram for explaining an example in which a resist pattern, which has been thickened by using the resist pattern thickening material of the present invention, is applied to the manufacturing of a recording head, and showing a step after the step shown in FIG. 39 .
- FIG. 41 is a cross-sectional schematic diagram for explaining an example in which a resist pattern, which has been thickened by using the resist pattern thickening material of the present invention, is applied to the manufacturing of a recording head, and showing a step after the step shown in FIG. 40 .
- FIG. 42 is a cross-sectional schematic diagram for explaining an example in which a resist pattern, which has been thickened by using the resist pattern thickening material of the present invention, is applied to the manufacturing of a recording head, and showing a step after the step shown in FIG. 41 .
- FIG. 43 is a cross-sectional schematic diagram for explaining an example in which a resist pattern, which has been thickened by using the resist pattern thickening material of the present invention, is applied to the manufacturing of a recording head, and showing a step after the step shown in FIG. 42 .
- FIG. 44 is a cross-sectional schematic diagram for explaining an example in which a resist pattern, which has been thickened by using the resist pattern thickening material of the present invention, is applied to the manufacturing of a recording head, and showing a step after the step shown in FIG. 43 .
- FIG. 45 is a plan view showing an example of the recording head manufactured by the steps of FIGS. 35 through 44 .
- FIG. 46 is a schematic diagram showing a pattern layout of the reticle used in Example 3.
- the resist pattern thickening material of the present invention comprises at least a resin and a compound represented by the following general formula (1), and may further comprise a surfactant, a phase transfer catalyst, a water-soluble aromatic compound, a resin containing an aromatic compound in a portion thereof, an organic solvent and other components suitably selected according to necessity.
- “X” is a functional group represented by the following structural formula (1).
- “Y” represents at least any one of a hydroxyl group, an amino group, an amino group substituted by an alkyl group, an alkoxy group, an alkoxycarbonyl group and an alkyl group, and the number of the substitution is an integer of 0 to 3.
- “m” represents an integer of 1 or more and “n” represents an integer of 0 or more.
- R 1 and R 2 may be the same or different, and each represent a hydrogen atom or a substituent group.
- Z represents at least any one of a hydroxyl group, an amino group, an amino group substituted by an alkyl group, and an alkoxy group, and the number of the substitution is an integer of 0 to 3.
- the resist pattern thickening material of the present invention is water-soluble or alkali-soluble.
- the water-solubility of the resist pattern thickening material is not particularly limited and suitably adjusted according to the purpose, but it is preferable that the resist pattern thickening material dissolves 0.1 g or more in 100 g of water at a water-temperature of 25° C.
- the alkali-solubility of the resist pattern thickening material is not particularly limited and suitably adjusted according to the purpose, but it is preferable that the resist pattern thickening material dissolves 0.1 g or more in 100 g of a 2.38% by mass tetramethyl ammonium hydroxide (TMAH) aqueous solution at a solution temperature of 25° C.
- TMAH tetramethyl ammonium hydroxide
- the resist pattern thickening material of the present invention may be an aqueous solution, a colloid liquid, an emulsion liquid or the like, but an aqueous solution is preferable.
- the resin is not particularly limited, and can be appropriately selected according to the purpose. However, it is preferable that the resin is water-soluble or alkali-soluble.
- the resin preferably comprises two or more polar groups in view of exhibiting an excellent water-solubility or alkali-solubility.
- the polar group is not particularly limited and can be appropriately selected according to the purpose. Preferable examples thereof are a hydroxyl group, an amino group, a sulfonyl group, a carbonyl group, a carboxyl group, derivatives thereof, and the like.
- the polar group may be contained singly, or two or more may be contained in combination.
- the water-soluble resin When the resin is water-soluble, the water-soluble resin preferably exhibits water solubility of 0.1 g or more in 100 g of water at a water temperature of 25° C.
- water-soluble resin examples include polyvinyl alcohol, polyvinyl acetal, polyvinyl acetate, polyacrylic acid, polyvinyl pyrolidone, polyethyleneimine, polyethylene oxide, styrene-maleic acid copolymer, polyvinylamine, polyallylamine, an oxazoline group-containing water-soluble resin, a water-soluble melamine resin, a water-soluble urea resin, an alkyd resin, a sulfonamide resin, and the like.
- the alkali-soluble resin When the resin is alkali-soluble, the alkali-soluble resin preferably exhibits alkali solubility of 0.1 g or more in 100 g of a 2.38% by mass tetramethyl ammonium hydroxide (TMAH) aqueous solution at a solution temperature of 25° C.
- TMAH tetramethyl ammonium hydroxide
- alkali-soluble resin examples include novolak resins, vinylphenol resins, polyacrylic acids, polymethacrylic acids, poly p-hydroxyphenylacrylate, poly p-hydroxyphenylmethacrylate, copolymer thereof, and the like.
- the resin may be used singly, or two or more thereof may be used in combination. Among these, polyvinyl alcohol, polyvinyl acetal, polyvinyl acetate or the like is preferred. It is more preferable that the resin contains the polyvinyl acetal at 5% by mass to 40% by mass.
- the resin may be a resin having a cyclic structure at least at a portion thereof, and use of such resins has an advantage that high etch resistance can be imparted to the resist pattern thickening material.
- the resin having a cyclic structure at least at a portion thereof may be used singly, and two or more may be used in combination. Moreover, it may be used together with the resins.
- the resin having a cyclic structure at a portion thereof is not particularly limited and can be appropriately selected according to the purpose. Suitable examples thereof include polyvinyl aryl acetal resins, polyvinyl aryl ether resins, polyvinyl aryl ester resins, and derivatives thereof. It is preferable to use at least one selected therefrom. From the standpoint of exhibiting water solubility or alkali solubility to an appropriate degree, such a resin that contains an acetyl group is more preferable.
- the polyvinyl aryl acetal resins are not particularly limited and may be appropriately selected according to the purpose. Examples thereof include ⁇ -resorcine acetal and the like.
- the polyvinyl aryl ether resins are not particularly limited and may be appropriately selected according to the purpose. Examples thereof include 4-hydroxybenzyl ether and the like.
- the polyvinyl aryl ester resins are not particularly limited and may be appropriately selected according to the purpose. Examples thereof include benzoate and the like.
- the method of producing the polyvinyl aryl acetal resins is not particularly limited and may be appropriately selected according to the purpose.
- a suitable example thereof is a known method of producing using a polyvinyl acetal reaction, or the like.
- Such a producing method is a method in which, for example, polyvinyl alcohol, and aldehyde in an amount needed stoichiometrically for the polyvinyl alcohol are made to undergo an acetalizing reaction in the presence of an acid catalyst.
- suitable examples are the methods disclosed in U.S. Pat. Nos. 5,169,897 and 5,262,270, Japanese Patent Application Laid-Open (JP-A) No. 05-78414, and the like.
- the method of producing the polyvinyl aryl ether resins is not particularly limited and may be appropriately selected according to the purpose. Examples thereof are a copolymerization reaction of a corresponding vinyl aryl ether monomer and vinyl acetate; an etherification reaction of polyvinyl alcohol and an aromatic compound having a halogenated alkyl group in the presence of a basic catalyst (Williamson ether synthesis reaction); and the like. Specifically, suitable examples are the methods disclosed in JP-A Nos. 2001-40086, 2001-181383, 06-116194, and the like.
- the method of producing the polyvinyl aryl ester resins is not particularly limited and may be appropriately selected according to the purpose. Examples thereof are a copolymerization reaction of a corresponding vinyl aryl ester monomer and vinyl acetate; an esterification reaction of polyvinyl alcohol and an aromatic carboxylic acid halide compound in the presence of a basic catalyst; and the like.
- the cyclic structure in the resin having a cyclic structure at a portion thereof is not particularly limited and may be appropriately selected according to the purpose. Examples thereof are monocyclic structure such as benzene, polycyclic structure such as bisphenol, condensed ring such as naphthalene, specifically, aromatic compounds, alicyclic compounds, heterocyclic compounds, and the like are preferred. In the resin having a cyclic structure at a portion thereof, these cyclic structure may be used singly or two or more thereof may be used in combination.
- aromatic compound examples include polyhydroxy phenol compounds, polyphenol compounds, aromatic carboxylic acid compounds, naphthalene polyhydroxy compounds, benzophenone compounds, flavonoid compounds, porphin, water-soluble phenoxy resins, aromatic-containing water-soluble dyes, derivatives thereof, glycosides thereof, and the like.
- the aromatic compound may be used singly, or two or more may be used in combination.
- polyhydroxy phenol compounds examples include resorcinol, resorcin[4]arene, pyrogallol, gallic acid, derivatives and glycosides thereof, and the like.
- polyphenol compounds examples include catechin, anthocyanidin (pelargonidin-type (4′-hydroxy), cyanidin-type (3′,4′-dihydroxy), delphinidin-type (3′,4′,5′-trihydroxy)), flavan-3,4-diol, proanthocyanidin, and the like.
- aromatic carboxylic acid compounds examples include salicylic acid, phthalic acid, dihydroxy benzoic acid, tannin, and the like.
- naphthalene polyhydroxy compounds examples include naphthalene diol, naphthalene triol, and the like.
- benzophenone compounds examples include alizarin yellow A, and the like.
- flavonoid compounds examples include flavone, isoflavone, flavanol, flavonone, flavonol, flavan-3-ol, aurone, chalcone, dihydrochalcone, quercetin, and the like.
- Examples of the alicyclic compound are polycycloalkanes, cycloalkanes, fused rings, derivatives and glycosides thereof, and the like. These may be used singly, or two or more may be used in combination.
- polycycloalkane examples include norbornane, adamantane, norpinane, sterane, and the like.
- cycloalkane examples include cyclopentane, cyclohexane, and the like.
- fused rings examples are steroids and the like.
- heterocyclic compound examples include a nitrogen-containing cyclic compound such as pyrrolidine, pyridine, imidazole, oxazole, morpholine, pyrrolidone, and the like; and an oxygen-containing cyclic compound such as furan, pyran, saccharides such as pentose and hexose, and the like.
- nitrogen-containing cyclic compound such as pyrrolidine, pyridine, imidazole, oxazole, morpholine, pyrrolidone, and the like
- oxygen-containing cyclic compound such as furan, pyran, saccharides such as pentose and hexose, and the like.
- the resin having a cyclic structure at a portion thereof are ones having at least one selected from the functional groups such as a hydroxyl group, a cyano group, an alkoxyl group, a carboxyl group, an amino group, an amide group, an alkoxycarbonyl group, a hydroxyalkyl group, a sulphonyl group, an acid anhydride group, a lactone group, a cyanate group, and a ketone group etc.; and the saccharic derivatives from the viewpoint of water-solubility.
- the one having at least one functional group selected from the hydroxyl group, amino group, sulphonyl group, carboxyl group, and their derivatives is more preferable.
- the molar content ratio of the cyclic structure in the resin having a cyclic structure at a portion thereof is not particularly limited as long as it does not affect the etch resistance, and may be appropriately selected according to the purpose. In the case where high etch resistance is needed, it is preferably 5 mol % or more, and more preferably, 10 mol % or more.
- the molar content ratio of the cyclic structure in the resin having a cyclic structure at a portion thereof, can be measured by means of NMR etc.
- the content of the resin (including the resin having a cyclic structure at a portion thereof) in the resist pattern thickening material can be suitably determined according to the type, content, etc., of the resin without the cyclic structure, the compound represented by the general formula (1), the surfactant described later and the like.
- the compound represented by the general formula (1) is not particularly limited as long as it has an aromatic ring at a portion of the structure and is represented by the following general formula (1), and may be appropriately selected according to the purpose.
- aromatic ring By having the aromatic ring, high etch resistance can be imparted to the resist pattern thickening material even if the resin does not have a cyclic structure at a portion thereof.
- “X” is a functional group represented by the following structural formula (1).
- “Y” represents at least any one of a hydroxyl group, an amino group, an amino group substituted by an alkyl group, an alkoxy group, an alkoxycarbonyl group and an alkyl group, and the number of the substitution is an integer of 0 to 3.
- “m” represents an integer of 1 or more and “n” represents an integer of 0 or more. m is preferably 1 for preventing generation of a crosslinking reaction and for easily controlling the reaction.
- R 1 and R 2 may be the same or different, and each represent a hydrogen atom or a substituent group.
- Z represents at least any one of a hydroxyl group, an amino group, an amino group substituted by an alkyl group, and an alkoxy group, and the number of the substitution is an integer of 0 to 3.
- R 1 and R 2 are each a hydrogen atom.
- R 1 and R 2 are each a hydrogen atom, it often has an advantage in water-solubility.
- the substituent group is not particularly limited and can be appropriately selected according to the purpose. Examples thereof are a ketone (alkylcarbonyl) group, an alkoxycarbonyl group, an alkyl group and the like.
- Suitable specific examples of the compound represented by the general formula (1) are a compound having a benzyl alcohol structure, a compound having a benzylamine structure, and the like.
- the compound having a benzyl alcohol structure is not particularly limited and can be appropriately selected according to the purpose. Suitable examples are benzyl alcohol and a derivative thereof. Specific examples are benzyl alcohol, 2-hydroxybenzyl alcohol (salicyl alcohol), 2-aminobenzyl alcohol, 4-aminobenzyl alcohol, 2,4-dihydroxybenzyl alcohol, 1,4-benzenedimethanol, 1-phenyl-1,2-ethanedithiol, 4-methoxymethylphenol and the like.
- the compound having a benzylamine structure is not particularly limited and can be appropriately selected according to the purpose. Suitable examples are benzylamine and a derivative thereof. Specific examples are benzylamine, 2-methoxybenzylamine, and the like.
- 2-hydroxybenzyl alcohol, 4-aminobenzyl alcohol, and the like are preferred from the point that these have high water solubility, and thus can be dissolved in large amount.
- the content of the compound represented by the general formula (1) in the resist pattern thickening material is not particularly limited and can be appropriately selected according to the purpose.
- the preferable amount is 0.01 to 50 parts by mass on the total amount of the resist pattern thickening material, and the more preferable amount is 0.1 to 10 parts by mass.
- the surfactant is not particularly limited and may be appropriately selected according to the purpose. Examples thereof include nonionic surfactants, cationic surfactants, anionic surfactants, amphoteric surfactants and the like. These may be used singly or two or more thereof may be used in combination. Among these, the nonionic surfactants are preferred from the point that they do not contain metallic ions such as sodium ion, potassium ion.
- nonionic surfactants are ones selected from alkoxylate surfactants, fatty acid ester surfactants, amide surfactants, alcohol surfactants, and ethylenediamine surfactants. Specific examples thereof include polyoxyethylene-polyoxypropylene condensation compounds, polyoxy alkylene alkylether compounds, polyoxy ethylene alkylether compounds, polyoxy ethylene derivative compounds, sorbitan fatty acid ester compounds, glycerine fatty acid ester compounds, primary alcohol ethoxylate compounds, phenol ethoxylate compounds, nonyl phenol ethoxylate compounds, octyl phenol ethoxylate compounds, lauryl alcohol ethoxylate compounds, oleyl alcohol ethoxylate compounds, fatty acid ester, amide, natural alcohol, ethylenediamine, secondary alcohol ethoxylate and the like.
- the cationic surfactants are not particularly limited and can be appropriately selected according to the purpose. Examples thereof include alkyl cationic surfactants, amide quaternary cationic surfactants, ester quaternary cationic surfactants, and the like.
- amphoteric surfactants are not particularly limited and can be appropriately selected according to the purpose. Examples thereof include amine oxide surfactants, betaine surfactants, and the like.
- the content of the surfactant in the resist pattern thickening material is not particularly limited and can be appropriately selected according to the types, contents, etc., of the resin, compound represented by the general formula (1), phase transfer catalyst, etc. Suitable range of the content of the surfactant is, for example, 0.01 parts by mass or more against 100 parts by mass of the resist pattern thickening material, and preferably 0.05 parts by mass to 2 parts by mass, further preferably 0.08 parts by mass to 0.5 parts by mass.
- the content of the surfactant is 0.01 parts by mass or less, there is an effect on improvement of applying property, however, in most cases, the reaction amount of the resist pattern thickening material hardly differ compared with the case where no surfactant is added.
- the phase transfer catalyst is not particularly limited and may be appropriately selected according to the purpose. Examples thereof are organic materials. Among these, suitable examples are basic materials.
- the resist pattern thickening material comprises the phase transfer catalyst
- the resist pattern to be thickened is efficiently and uniformly thickened regardless of a material thereof and the thickening effect shows less dependency on a material of the resist pattern to be thickened.
- Such effects of the phase transfer catalyst are not impaired, for example, even if the resist pattern, which is the subject to be thickened with use of the resist pattern thickening material, contains an acid generating agent or not.
- the phase transfer catalyst is preferably water-soluble, and exhibits a water-solubility of 0.1 g in 100 g of water at a water-temperature of 25° C.
- phase transfer catalyst examples include crown ethers, azacrown ethers, onium salts, and the like.
- the phase transfer catalyst may be used singly or two or more thereof may be used in combination.
- the onium salt is preferably from the standpoint of solubility to water.
- crown ether and azacrown ether examples are 18-crown-6,15-crown-5,1-aza-18-crown-6,13-diaza-18-crown-6,1,4,7-triazacyclononane, and the like.
- the onium salts are not particularly limited and may be appropriately selected according to the purpose, but suitably examples thereof are quaternary ammonium salts, pyridinium salt, thiazolium salts, phosphonium salts, piperazinium salts, ephedrinium salts, quininium salts, and cinchoninium salts, and the like.
- quaternary ammonium salt examples include those used as a organic synthesis reagent, namely, tetrabutylammonium hydrogensulfate, tetramethylammonium acetate, tetramethylammonium chloride, and the like.
- pyridinium salt examples include hexadecylpyridinium bromide, and the like.
- thiazolium salt examples include 3-benxyl-5-(2-hydroxyethyl)-4-methylthiazolium chloride, and the like.
- Examples of the phosphonium salt are tetrabutylphosphonium chloride, and the like.
- piperazinium salt examples include 1,1-dimethyl-4-phenylpiperazinium iodide, and the like.
- ephdrinium salt examples include (( ⁇ )-N,N-dimethylephedrinium bromide), and the like.
- quininium salt examples include N-benzylquininium chloride, and the like.
- Examples of the cinchoninium salt are N-benxylcinchoninium chloride, and the like.
- the content of the phase transfer catalyst in the resist pattern thickening material depends on the types and contents etc. of the resin etc., so that it is impossible to define definitely, but it can be suitably selected according to the type and content etc. For example, 10,000 ppm or less is preferable, 10 to 10,000 ppm is more preferable, 10 to 5,000 ppm is further preferable, and 10 to 3,000 ppm is particularly preferable.
- the advantageous point is that the resist pattern, such as a line-space pattern etc. can be thickened regardless of the size.
- the content of the phase transfer catalyst can be measured with use of, for example, liquid chromatography.
- the water-soluble aromatic compound is not particularly limited, as long as it is an aromatic compound that has water-solubility, and it can be suitably selected according to the purpose.
- the compound having water-solubility such that 1 g or more is dissolved into 100 g of water at 25° C. is preferable, and the compound having water-solubility such that 3 g or more is dissolved into 100 g of water at 25° C. is more preferable.
- the most preferable is the compound having water-solubility such that 5 g or more is dissolved into 100 g of water at 25° C.
- the preferable point is that the etch resistance of the obtained resist pattern can be remarkably improved because of the cyclic structure contained in the water-soluble aromatic compound.
- water-soluble aromatic compound examples include polyphenol compounds, aromatic carboxylic acid compounds, naphthalene polyhydroxy compounds, benzophenone compounds, flavonoid compounds, porphin, water-soluble phenoxy resins, aromatic-containing water-soluble dyes, derivatives thereof, glycosides thereof, and the like. These may be used alone, or two or more may be used in combination.
- polyphenol compounds examples include catechin, anthocyanidin (pelargonidin-type (4′-hydroxy), cyanidin-type (3′,4′-dihydroxy), delphinidin-type (3′,4′,5′-trihydroxy)), flavan-3,4-diol, proanthocyanidin, resorcine, resorcine[4]arene, pyrogallol, and gallic acid, and the like.
- aromatic carboxylic acid compounds examples include salicylic acid, phthalic acid, dihydroxy benzoic acid, tannin, and the like.
- benzophenone compounds examples include alizarin yellow A, and the like.
- flavonoid compounds examples include flavone, isoflavone, flavanol, flavonone, flavonol, flavan-3-ol, aurone, chalcone, dihydrochalcone, quercetin, and the like.
- polyphenol compounds are preferable, catechin, resorcine, and the like are particularly preferable.
- the compound having two or more polar groups is preferable, the compound having three or more is more preferable, and the compound having four or more is particularly preferable.
- the polar group is not particularly limited and can be appropriately selected according to the purpose. Examples thereof are a hydroxyl group, a carboxyl group, a carbonyl group, a sulfonyl group, and the like.
- the content of the water-soluble aromatic compound in the resist pattern thickening material can be suitably decided according to the types, contents etc. of the resin, compound represented by the general formula (1), phase transfer catalyst, and surfactant etc.
- the organic solvent is not particularly limited and may be suitably selected according to the purpose. Examples thereof include alcohols, linear esters, cyclic esters, ketones, linear ethers, cyclic ethers, and the like.
- the resist pattern thickening material comprises the organic solvent
- the advantage is that the resin, the compound represented by the general formula (1), etc. may be improved in terms of the solubility in the resist pattern thickening material.
- the organic solvent can be mixed with water for use. Suitable examples of the water are pure water (deionized water), and the like.
- Examples of the alcohols are methanol, ethanol, n-propyl alcohol, isopropyl alcohol, butyl alcohol, and the like.
- linear esters examples include ethyl lactate, propylene glycol methyl ether acetate (PGMEA), and the like.
- cyclic esters examples include lactones such as ⁇ -butyrolactone, and the like.
- ketones examples include acetone, cyclohexanone, and heptanone, and the like.
- linear ethers examples include ethyleneglycol dimethylether, and the like.
- cyclic ethers examples include tetrahydrofuran, dioxane, and the like.
- organic solvents may be used alone, or two or more may be used in combination.
- solvents having a boiling point of about 80 to 200° C. are preferable from the viewpoint of performance to thicken the resist pattern precisely.
- the content of the organic solvent in the resist pattern thickening material can be suitably decided according to the type, content etc. of the resin, compound represented by the general formula (1), phase transfer catalyst, and surfactant etc.
- the other components are not particularly limited as long as they do not interfere with the effects of the present invention, and may be suitably selected according to the purpose.
- Examples are various types of known additives such as thermal acid generating agents, quenchers such as amine type, amide type, and the like.
- the content of the other components in the resist pattern thickening material can be decided according to the kind, content etc. of the resin, compound represented by the general formula (1), phase transfer catalyst, and surfactant etc.
- the resist pattern thickening material of the present invention can be used by applying over the resist pattern to be thickened.
- the surfactant may be applied separately before applying the resist pattern thickening material without adding the surfactant into the resist pattern thickening material.
- the resist pattern thickening material When the resist pattern thickening material is applied over the resist pattern to be thickened and is made to interact or mix with the resist pattern to be thickened, the resist pattern thickening material and the resist pattern undergo interaction to form a mixing layer. As a result, the resist pattern to be thickened is thickened by an amount corresponding to the mixing layer, and a thickened resist pattern is formed.
- the resist pattern thickening material comprises the compound represented by the general formula (1), thus the resist pattern is efficiently and uniformly thickened regardless of a material or size of the resist pattern. With utilization of such resist pattern thickening material, therefore, the thickening effect of the resist pattern is hardly affected by the material or size of the resist pattern.
- the resist pattern which is formed in this way, represents space patterns of which the diameter or width is smaller than the space patterns of resist pattern prior to thickening.
- the space pattern formed by the resist pattern exceeds exposure limits or resolution limits of light sources and can represent finer structures, in other words, the size of spaces such as pore and ternch of the resulting space pattern is smaller than the lower limit of space that can be patterned by the wavelength of light used for the light sources. Accordingly, when patterning a resist pattern by means of ArF excimer laser beam, and thickening the resist pattern by means of the resist pattern thickening material, the space pattern of resist formed by the thickened resist pattern can represent such fine and precise conditions as those patterned by electron beam.
- the amount of thickening of the resist pattern to be thickened can be controlled to a desired degree by appropriately adjusting the viscosity of the resist pattern thickening material, the coating thickness of the resist pattern thickening material, the baking temperature, the baking time, and the like.
- the material of the resist pattern to be thickened (the resist pattern on which the resist pattern thickening material of the present invention is applied) is not particularly limited, and can be appropriately selected from among known resist materials according to the purpose.
- the material of the resist pattern to be thickened may be a negative type or a positive type. Suitable examples include g-line resists, i-line resists, KrF resists, ArF resists, F 2 resists, electron beam resists, and the like, which can be patterned by g-line, i-line, KrF excimer laser light, ArF excimer laser light, F 2 excimer laser light, electron beam, and the like, respectively. These resists may be chemically amplified types, or non-chemically amplified types.
- KrF resists, ArF resists, and resists containing acrylic resins are preferable; in addition, at least one of ArF resists and resists containing acrylic resin is preferable from the view point that they are demanded in terms of improvement in resolution limit for finer patterning and increase of throughput.
- the specific examples of the resist pattern material include novolak resists, PHS resists, acrylic resists, cycloolefin-maleic acid anhydrate (COMA) resists, cycloolefin resists, hybrid resists such as alicyclic acrylic-COMA copolymer and the like. These resists may be modified by fluorine.
- the process for forming the resist pattern to be thickened, and the size, the thickness and the like of the resist pattern to be thickened are not particularly limited, and can be appropriately selected according to the purpose.
- the thickness can be appropriately determined by the surface of the workpiece to be worked and etching conditions and is generally from about 0.1 ⁇ m to about 500 ⁇ m.
- a resist pattern thickening material 1 is applied over the surface of the resist pattern to be thickened 3 .
- Prebaking heating and drying
- mixing or infiltrating of the resist pattern thickening material 1 into the resist pattern to be thickened 3 occurs at the interface between the resist pattern to be thickened 3 and the resist pattern thickening material 1 .
- a surface layer or mixing layer 10 a is formed as the result of reaction of the mixed or infiltrated portions at the interface of an inner layer resist pattern 10 b (the resist pattern to be thickened 3 ) and the resist pattern thickening material 1 .
- the resist pattern thickening material 1 comprises the compound represented by the general formula (1), and thus the inner layer resist pattern 10 b (the resist pattern to be thickened 3 ) is efficiently and uniformly thickened without being affected by the size of the inner layer resist pattern 10 b (the resist pattern to be thickened 3 ).
- the portions with no interaction or mixing with the resist pattern 3 or portions with less interaction or mixing with the resist pattern 3 i.e., the portions having high water-solubility, in the resist pattern thickening material 1 applied on the resist pattern 3 , are dissolved and removed, and a thickened resist pattern 10 which is uniformly thickened, is developed or formed.
- the developing processing may be water developing or may be developing by an alkaline developing solution, but water containing a surfactant and an alkaline developing solution containing a surfactant can be also appropriately used according to necessity, which will be described in more detail later.
- the thickened resist pattern 10 has, on the surface of the inner layer resist pattern 10 b (the resist pattern to be thickened 3 ), the surface layer 10 a which has been formed as a result of mixing or infiltrating of the resist pattern thickening material 1 . Since the thickened resist pattern 10 is thicker than the resist pattern to be thickened 3 by an amount corresponding to the thickness of the surface layer 10 a , the size of space pattern formed by the thickened resist pattern, i.e., the distance between adjacent thickened resist patterns 10 or opening diameter of the hole pattern formed by the thickened resist pattern 10 , is smaller than that formed by the resist pattern to be thickened 3 prior to thickening.
- the space pattern formed by the resist pattern exceeds exposure limits or resolution limits of light sources of the exposure device upon forming the resist pattern to be thickened 3 . Accordingly, when patterning a resist pattern by means of ArF excimer laser light, and thickening the resist pattern by means of the resist pattern thickening material, the space pattern of resist formed by the thickened resist pattern can represent such fine conditions as those patterned by electron beam.
- the space pattern formed by the thickened resist pattern 10 is finer and more precise than the space pattern formed by the resist pattern 3 .
- the surface layer 10 a of the thickened resist pattern 10 is formed by the resist pattern thickening material 1 .
- the compound represented by the general formula (1) in the resist pattern thickening material 1 has an aromatic ring, and thus even if the resist pattern to be thickened 3 is a material having low etch resistance, the resulting thickened resist pattern 10 has high etch resistance.
- the resist pattern thickening material 1 comprises a resin having a cyclic structure at a portion thereof or the like, thereby comprising the cyclic structure in the resist pattern thickening material 1 , etch resistance is further improved.
- the resist pattern thickening material of the present invention can be suitably used in thickening a resist pattern to be thickened, and making the space pattern fine, exceeding exposure limits.
- the resist pattern thickening material of the present invention is particularly suitably used in the process for forming a resist pattern of the present invention, the process for manufacturing a semiconductor device of the present invention, and the like.
- the resist pattern thickening material of the present invention can be suitably used for coating or thickening a resist pattern formed of resin or the like which is exposed to plasma, etc., and thus is required to make the etch resistance of the surface improved.
- the resist pattern thickening material of the present invention comprises the resin having a cyclic structure at a portion thereof or the like, thereby comprising the cyclic structure in the resist pattern thickening material
- the resist pattern thickening material of the present invention can be more suitably used for coating or thickening the resist pattern.
- the use of the resist pattern thickening material of the present invention enables a resist pattern to be thickened to the same degree as is thickened without such operation.
- the resist pattern thickening material of the present invention can be applied over the resist pattern to be thickened and is capable of thickening the resist pattern in the same way as in the chemically amplified type resist. From these facts, it can be easily understood that the reaction proceeds in a different form from RELACS material which utilizes an acid.
- the process for forming a resist pattern of the present invention comprises forming a resist pattern to be thickened, and then applying the resist pattern thickening material of the present invention so as to cover the surface of the resist pattern to be thickened, preferably comprises irradiating the entire surface of the resist pattern to be thickened with one of ultraviolet light and ionizing radiation before the application, and may further comprise other treatments suitably selected according to necessity.
- Suitable examples of materials of the resist pattern to be thickened are the above-mentioned materials in the description of the resist pattern thickening material of the present invention.
- the resist pattern to be thickened can be formed in accordance with known methods.
- the resist pattern to be thickened can be formed on a surface of a workpiece (base material).
- the surface of the workpiece (base material) is not particularly limited, and can be appropriately selected according to the purpose.
- the surface of the workpiece (base material) is, for example, a surface of a semiconductor substrate. Specific suitable examples thereof include the surfaces of the substrate such as a silicon wafer, various types of oxide films, or the like.
- the method of applying the resist pattern thickening material is not particularly limited, and can be appropriately selected from among known coating methods according to the purpose. Suitable examples are a spin coating method and the like. In the case where a spin coating method is used, the conditions are as follows for example: the rotational speed is about 100 rpm to 10,000 rpm, and is preferably 800 rpm to 5,000 rpm, and the time is about one second to 10 minutes, and is preferably 1 second to 90 seconds.
- the coated thickness at the time of coating is usually about 10 to 1,000 nm (100 to 10,000 angstroms) and 100 to 500 nm (1,000 to 5,000 angstroms) is preferable.
- the surfactant may be applied before and separately from applying the resist pattern thickening material, without being contained in the resist pattern thickening material.
- the entire surface of the resist pattern to be thickened be irradiated with one of ultraviolet light or ionizing radiation before applying the resist pattern thickening material (hereinafter sometimes referring to as “pre-treatment exposure”) in terms of adjusting the surface condition of the resist film on a wafer.
- pre-treatment exposure one of ultraviolet light or ionizing radiation
- the conditions of the surface of the resist film can be adjusted, allowing the amount of thickening the resist pattern to be uniform.
- the source of ultraviolet light or ionizing radiation for the pre-treatment exposure are not particularly limited and can be appropriately selected according to the sensitive wavelength of the material of the resist pattern.
- Specific examples of the ultraviolet light and ionizing radiation include broadband ultraviolet light emitted from a high-pressure mercury lamp or low-pressure mercury lamp, as well as g-line (wavelength: 436 nm), i-line (wavelength: 365 nm), KrF excimer laser light (wavelength: 248 nm), ArF excimer laser light (wavelength: 193 nm), F 2 excimer laser light (wavelength: 157 nm), EUV light (soft x-ray region having a wavelength of 5 nm to 15 nm), or electron beam, X-ray etc.
- the irradiation dose (exposure dose), at which the resist pattern to be thickened is irradiated with the ultraviolet light or ionizing radiation is not particularly limited, can be appropriately selected according to the type of the ultraviolet light or ionizing radiation to be used, but, for example, is preferably 0.1% to 20% relative to the irradiation dose (exposure dose) required for forming the resist pattern.
- the irradiation dose is less than 0.1%, the surface of the resist film may not be adjusted in a uniform state effectively.
- the irradiation dose exceeds 20%, photoreaction in the resist pattern occurs more than required, the upper part of the resist pattern turns to be solubilized in an alkaline developer to give the pattern deformation or partial loss.
- the method is not particularly limited. Irradiation can be carried out by appropriately adjusting, irradiation time, irradiation dose, etc. as follows. When a strong light is used, irradiation can be carried out for a short time, and when a weak light is used, for a long time. When a resist material with a high exposure sensitivity is used, irradiation can be carried out with less exposure dose (irradiation dose), and when a resist material with a low exposure sensitivity is used, with more exposure dose (irradiation dose).
- the resist pattern thickening material can be efficiently mixed or infiltrated into the resist pattern to be thickened at the interface between the resist pattern to be thickened and the resist pattern thickening material.
- the conditions, the method and the like of the prebaking are not particularly limited as long as they do not cause softening of the resist pattern to be thickened, and can be appropriately selected according to the purpose.
- the prebaking may be carried out once, or two or more times.
- the temperature of prebaking at each time may be constant or may be different.
- the temperature is preferably about 40° C. to 150° C., and 70° C. to 120° C. is more preferable, and the time is preferably about 10 seconds to 5 minutes, and 40 seconds to 100 seconds is more preferable.
- baking of the applied resist pattern thickening material after the prebaking is preferable from the standpoint that the mixing or infiltrating at the interface of the resist pattern to be thickened and the resist pattern thickening material can be made to proceed efficiently.
- the conditions, the method and the like of the baking are not particularly limited and can be appropriately selected according to the purpose. However, usually, a higher temperature than that at the prebaking (heating and drying) is used.
- the conditions of the baking are, for example, that the temperature is about 70° C. to 150° C., and 90° C. to 130° C. is preferable, and the time is about 10 seconds to 5 minutes, and 40 seconds to 100 seconds is preferable.
- carrying out developing processing of the applied resist pattern thickening material after the baking is preferable.
- carrying out developing processing is preferable in that, the portions with no interaction or mixing with the resist pattern, or the portions with less interaction or mixing with the resist pattern, i.e., the portions having high water-solubility, in the applied resist pattern thickening material, are dissolved and removed, and a thickened resist pattern is developed or obtained.
- the developing processing is not particularly limited and can be appropriately selected according to the purpose. It may be water developing or may be alkaline developing, and the developing processing is also preferably carried out using water containing a surfactant or an alkaline developing solution containing a surfactant. In this case, uniformity of the thickening effect at the interface between the resist pattern thickening material and resist pattern is improved, allowing the generation of residue or defects to be reduced.
- the surfactant is not particularly limited and can be appropriately selected according to the purpose.
- a non-ionic surfactant is suitable in that it does not contain metallic ions such as sodium salt and potassium salt.
- the non-ionic surfactant is not particularly limited and can be appropriately selected according to the purpose. Suitable specific examples include polyoxyethylene-polyoxypropylene condensation compounds, polyoxyalkylene alkyl ether compounds, polyoxyethylene alkyl ether compounds, polyoxyethylene derivative compounds, silicone compounds, sorbitan fatty acid ester compounds, glycerine fatty acid ester compounds, alcohol ethoxylate compounds, phenol ethoxylate compounds, and the like. These may be used singly, or two or more thereof may be used in combination. Even an ionic surfactant can be used if it is a non-metallic salt.
- the content of the surfactant in water is not particularly limited, can be appropriately selected according to the purpose, but is preferably 0.001% by mass to 1% by mass, more preferably 0.05% by mass to 0.5% by mass. If the content is less than 0.001% by mass, the effect of the surfactant is small, and if it exceeds 1% by mass, space may widen due to excess dissolving power of developing solution, influence on the dimension and reduced amount of space size of resist becomes significant, for example, pattern-edge becomes round, and besides, residue and defect due to the generation of bubble may be generated easily.
- the alkaline developing solution is not particularly limited and can be appropriately selected from known ones used in manufacturing a semiconductor device. Suitable examples thereof include an aqueous solution of quaternary ammonium hydroxide solution, an aqueous solution of choline, and the like. These may be used singly, or two or more thereof may be used in combination. Among these, an aqueous solution of tetramethylammonium hydroxide is preferable because it can be used at low cost and is highly versatile.
- the surfactant may be added to the alkaline developing solution according to necessity.
- the content of the surfactant in the alkaline developing solution is not particularly limited, can be appropriately selected according to the purpose, but, is the same as mentioned above, preferably 0.001% by mass to 1% by mass, more preferably 0.05% by mass to 0.5% by mass.
- a resist material 3 a is applied on the work surface (base material) 5 .
- the resist material 3 a is patterned to form the resist pattern to be thickened 3 .
- the resist pattern thickening material 1 is applied over the surface of the resist pattern to be thickened 3 , and prebaking (heating and drying) is carried out to form a coated film.
- the portions with no reaction or less interaction or mixing with the resist pattern to be thickened 3 i.e., the portions having high water-solubility, in the applied resist pattern thickening material 1 , are dissolved and removed, such that the thickened resist pattern 10 composed of the inner layer resist pattern 10 b (the resist pattern to be thickened 3 ) and surface layer 10 a thereon, is developed or formed.
- the developing processing may be water developing or may be developing by an alkaline solution, and is also preferably performed using the water containing a surfactant or the alkaline developing solution containing a surfactant.
- the thickened resist pattern 10 is formed as a result of thickening of the resist pattern to be thickened 3 by the resist pattern thickening material 1 , and has, on the surface of the inner layer resist pattern 10 b (the resist pattern to be thickened 3 ), the surface layer 10 a formed as a result of reaction of resist pattern thickening material 1 .
- the resist pattern thickening material 1 comprises the compound represented by the general formula (1)
- the inner layer resist pattern 10 b (the resist pattern to be thickened 3 ) is uniformly thickened to form the thickened resist pattern 10 without being adversely affected by the type of the material, the size and the like of the resist pattern to be thickened 3 .
- the thickened resist pattern 10 is thicker than the resist pattern to be thickened 3 (the inner layer resist pattern 10 b ) by an amount corresponding to the thickness of the surface layer 10 a .
- the width of the space pattern formed by the thickened resist pattern 10 is smaller than that of the space pattern formed by the resist pattern to be thickened 3 , and the space pattern formed by the thickened resist pattern 10 is fine.
- the surface layer 10 a of the resist pattern 10 is formed by the resist pattern thickening material 1 and the compound represented by the general formula (1) in the resist pattern thickening material 1 has an aromatic ring. Therefore, even if the resist pattern to be thickened 3 (the inner layer resist pattern 10 b ) is a material having a low etch resistance, the resist pattern 10 , which has, on the surface thereof, the surface layer or mixing layer 10 a having high etch resistance, can be formed.
- the resist pattern thickening material 1 comprises a resin having a cyclic structure at a portion thereof or the like, thereby comprising the cyclic structure in the resist pattern thickening material 1 , the etch resistance of the surface layer or mixing layer 10 a is further improved.
- the resist pattern which is formed by the process for forming a resist pattern of the present invention has, on the surface of the resist pattern to be thickened, the surface layer which is formed by interacting or mixing of resist pattern thickening material.
- the resist pattern thickening material comprises the compound represented by the general formula (1) having an aromatic ring, and thus, even if the resist pattern to be thickened is a material which has low etch resistance, the thickened resist pattern, which has, on the surface of the resist pattern to be thickened, the surface layer or mixing layer having high etch resistance, can be efficiently formed.
- the etch resistance of the surface layer or mixing layer is further improved.
- the thickened resist pattern formed by the process for forming a resist pattern of the present invention is thicker than the resist pattern to be thickened by an amount corresponding to the thickness of the surface layer or mixing layer. Therefore, the size such as diameter and width of the space pattern formed by thickened resist pattern 10 is smaller than that of a space pattern formed by the resist pattern to be thickened. Therefore, by using the process for forming a resist pattern of the present invention, a fine space pattern of resist can be formed efficiently.
- the thickened resist pattern preferably has high etch resistance. It is preferable that the etching rate (nm/min) of the thickened resist pattern is equivalent to or less than that of the resist pattern to be thickened. Specifically, the ratio of the etching rate (nm/min) of the resist pattern to be thickened to the etching rate (nm/min) of the surface layer or mixing layer determined under the same condition, i.e., resist pattern to be thickened/surface layer or mixing layer, determined under the same condition is preferably 1.1 or more, more preferably 1.2 or more, and particularly preferably 1.3 or more.
- the etching rate (nm/min) can be determined, for example, by measuring a reduction of a sample film using a conventional etching system after etching for a predetermined time, and calculating a reduction per unit time.
- the surface layer or mixing layer can be suitably formed by using the resist pattern thickening material of the present invention.
- the resist pattern thickening material comprises the cyclic structure, e.g., comprising a resin having a cyclic structure at a portion thereof or the like.
- the surface layer or mixing layer contains the cyclic structure, can be confirmed by, for example, analyzing the IR absorption spectrum of the surface layer or mixing layer.
- the process for forming a resist pattern of the present invention is suitable for forming a variety of space pattern of resist, for example, a line-space pattern, hole pattern (e.g., for contact hole), trench (groove) pattern, etc.
- the thickened resist pattern formed by the process for forming a resist pattern can be used as a mask pattern, reticle pattern and the like, can be applied for manufacturing functional parts such as metal plugs, various wirings, recording heads, LCDs (liquid crystal displays), PDPs (plasma display panels), SAW filters (surface acoustic wave filters); optical parts used in connecting optical wiring; fine parts such as microactuators; semiconductor devices; and the like, and can be suitably employed in the process for manufacturing a semiconductor device of the present invention which will be described hereinafter.
- the process for manufacturing a semiconductor device of the present invention comprises a resist pattern forming step and a patterning step, and may further comprise any other steps suitably selected according to necessity.
- the resist pattern forming step is a step for forming a thickened resist pattern on a surface of a workpiece using the process for forming a resist pattern of the present invention, and is a step for thickening a resist pattern to be thickened by forming a resist pattern to be thickened on a surface of a workpiece, and then by applying the resist pattern thickening material of the present invention so as to cover the surface of the resist pattern to be thickened.
- the resist pattern forming step forms a thickened resist pattern on the surface of the workpiece.
- resist pattern forming step Details of the resist pattern forming step are the same as those of the process for forming a resist pattern of the present invention.
- Examples of the surface of the workpiece are surface layers of various members in semiconductor devices. Suitable examples are substrates such as silicon wafers, surface layers thereof, various types of oxide films, and the like.
- the resist pattern to be thickened is as described above.
- the method of coating is as described above. Further, after the coating, it is preferable to carry out the above-described prebaking, baking, and the like.
- the patterning step is a step for patterning the surface of the workpiece by carrying out etching by using the thickened resist pattern formed by the resist pattern forming step as a mask or the like (as a mask pattern or the like).
- the method of etching is not particularly limited, and can be appropriately selected from among known methods according to the purpose. Dry etching is a suitable example.
- the etching conditions are not particularly limited, and can be appropriately selected according to the purpose.
- Suitable examples of the other steps are a surfactant coating step, a developing processing step, and the like.
- the surfactant coating step is a step for applying the surfactant on the surface of the resist pattern to be thickened before the resist pattern forming step.
- the surfactant is not particularly limited, and can be appropriately selected according to the purpose. Suitable examples are the surfactants listed above, and polyoxyethylene-polyoxypropylene condensation product compounds, polyoxyalkylene alkylether compounds, polyoxyethylene alkylether compounds, polyoxyethylene derivative compounds, sorbitan fatty acid ester compounds, glycerin fatty acid ester compounds, primary alcohol ethoxylate compounds, phenol ethoxylate compounds, and nonylphenol ethoxylate, octylphenol ethoxylate, lauryl alcohol ethoxylate, oleyl alcohol ethoxylate, fatty acid ester, amide, natural alcohol, ethylene diamine, secondary alcohol ethoxylate, alkyl cationic, amide quaternary cationic, ester quaternary cationic, amine oxide, and betaine surfactants, and the like.
- the developing processing step is a step for carrying out development of the applied resist pattern thickening material after the resist pattern forming step and before the patterning step. Note that the developing processing is as described above.
- Resist pattern thickening materials A through T having the compositions shown in Table 1 were prepared.
- the “thickening material” means a resist pattern thickening material
- “A” through “T” correspond to the resist pattern thickening materials A through T.
- the resist pattern thickening materials A, B, and P correspond to comparative example
- the resist pattern thickening materials C to O and Q to T correspond to examples (of the present invention).
- the unit of the values in parentheses is parts by mass.
- “X” is a functional group represented by the following structural formula (1).
- “Y” represents at least any one of a hydroxyl group, an amino group, an amino group substituted by an alkyl group, an alkoxy group, an alkoxycarbonyl group and an alkyl group, and the number of the substitution is an integer of 0 to 3.
- “m” represents an integer of 1 or more and “n” represents an integer of 0 or more.
- R 1 and R 2 may be the same or different, and each represent a hydrogen atom or a substituent group.
- Z represents at least any one of a hydroxyl group, an amino group, an amino group substituted by an alkyl group, and an alkoxy group, and the number of the substitution is an integer of 0 to 3.
- PVA polyvinyl alcohol resin
- KW-3 polyvinyl acetal resin
- PC-6 non-ionic surfactant
- SO-145 non-ionic surfactant
- the resist pattern thickening materials A through T of the present invention which were prepared as described above were applied over hole patterns (each having the opening diameter shown in “initial space size of resist” in Table 2) formed by ArF resists (“AR1244J”, manufactured by JSR Corporation), by a spin coating method, first under the condition of 1,000 rpm/5 s, and then under the condition of 3,500 rpm/40 s. Thereafter, baking was carried out under the condition of 110° C./60 s. Then, the resist pattern thickening materials A through T each were rinsed for 60 seconds with pure water and unreacted portions with no interaction or mixing were removed to develop the resist pattern thickened by the resist pattern thickening materials A through T, respectively. Thus, thickened resist patterns were formed.
- the sizes (diameters) of the hole patterns formed by the resulting thickened resist patterns are shown in Table 2 together with the initial pattern sizes (the sizes of the hole patterns formed by the resist patterns to be thickened before thickening, i.e., the “space size (hole diameter) of resist before thickening” in Table 2). Note that, in Table 2, “A” through “T” correspond to the resist pattern thickening materials A through T.
- Trench (groove) patterns with various sizes were formed with use of ArF resist (“AR1244J”, manufactured by JSR Corporation), the resist pattern thickening materials T and P prepared as described above were applied over the trench (groove) patterns, respectively, by a spin coating method, first under the condition of 1,000 rpm/5 s, and then under the condition of 3,500 rpm/40 s, and baking was carried out under the condition of 110° C./60 s.
- the resist pattern thickening materials T and P were each rinsed with pure water for 60 seconds and unreacted portions with no interaction or mixing were removed to develop the resist pattern thickened by the resist pattern thickening materials T and P, respectively. Thus, thickened resist patterns were formed.
- the reduced amounts (nm) of the sizes of the trench patterns formed by the resulting thickened resist patterns are shown in Table 3 together with the initial pattern sizes (the sizes of the space patterns formed by the resist patterns to be thickened before thickening, i.e., the “space size of resist before thickening” in Table 3). Note that, in Table 3, “T” and “P” correspond to the resist pattern thickening materials T and P.
- Hole patterns with various sizes were formed with use of ArF resist (“AR1244J”, manufactured by JSR Corporation), the resist pattern thickening materials T and P were applied over the hole patterns, respectively, by a spin coating method, first under the condition of 1,000 rpm/5 s, and then under the condition of 3,500 rpm/40 s, and baking was carried out under the condition of 110° C./60 s.
- ArF resist ArF resist
- the resist pattern thickening materials T and P were each rinsed with pure water for 60 seconds and unreacted portions with no interaction or mixing were removed to develop the resist pattern thickened by the resist pattern thickening materials T and P, respectively. Thus, thickened resist patterns were formed.
- the reduced amounts (nm) of the sizes of the space patterns formed by the resulting thickened resist patterns are shown in Table 4 together with the initial pattern sizes (the sizes of the space patterns formed by the resist patterns to be thickened before thickening, i.e., the “space size of resist before thickening” in Table 4). Note that, in Table 4, “T” and “P” correspond to the resist pattern thickening materials T and P.
- the space widths (the intervals between the line patterns) in the lines and spaces pattern could be reduced and could be made to be uniformly fine; and when the resist pattern thickening material T of the present invention was used in forming hole patterns, the hole patterns could be thickened, and the inner diameters of the hole patterns could be reduced (refer to Tables 3 and 4).
- the resist pattern thickening material P as a comparative example which is a conventional resist pattern thickening material containing an uril crosslinking agent, was used in forming lines and spaces patterns and hole patterns, the reduced amount depended on the sizes of the line-space pattern and the hole pattern.
- Hole patterns having openings or holes with an opening diameter of 580 nm were formed with use of non-chemically amplified type electron beam resist (“Nano 495 PMMA” manufactured by MicroChem Corp.) by electron beam exposure thereof, the resist pattern thickening material E of the present invention was applied over the hole patterns by a spin coating method, first under the condition of 1,000 rpm/5 s, and then under the condition of 3,500 rpm/40 s, and baking was carried out under the condition of 110° C./60 s. Thereafter, the resist pattern thickening material E was rinsed with pure water for 60 seconds and unreacted portions with no interaction or mixing were removed to develop the resist pattern thickened by the resist pattern thickening material E. Thus, thickened resist patterns were formed. The size of the space pattern formed by the resulting thickened resist patterns was 400 nm.
- the resist pattern thickening material of the present invention could thicken a non-chemically amplified type electron beam resist as well. Thus, it was found that thickening was not caused by utilizing an acid in the resist pattern to be thickened and the interaction or mixing was not crosslinking reaction caused by acid diffusion.
- the reduced amounts (nm) of the sizes of the space patterns formed by the resulting thickened resist patterns are shown in Table 5 together with the baking temperature. Note that, in Table 5, “T” and “P” correspond to the resist pattern thickening materials T and P.
- the resist pattern thickening materials C, I, and K of the present invention were applied over the surfaces of resists formed on silicon substrates to form surface layers having a thickness of 0.5 ⁇ m.
- These surface layers, a KrF resist (UV-6, manufactured by Shipley Company, L.L.C) for comparison, and a poly(methyl methacrylate) (PMMA) for comparison were subjected to etching using an etching system (a parallel plate RIE system, manufactured by Fujitsu Limited), at P ⁇ of 200 W, a pressure of 0.02 Torr and a flow rate of CF 4 gas of 100 sccm for three minutes.
- the reductions in the samples were measured, the etching rates were calculated therefrom, and the etching rates of samples were compared with the etching rate of the KrF resist.
- Table 6 The results are shown in Table 6.
- Resist pattern thickening materials 2A through 2D having the composition shown in Table 7 were prepared.
- thickening material means a resist pattern thickening material
- 2A through “2D” correspond to the resist pattern thickening materials 2A through 2D.
- the unit of the values in parentheses is parts by mass.
- PVA polyvinyl alcohol resin
- PVA-205C polyvinyl alcohol resin
- surfactant column
- TN-80 is a non-ionic surfactant (a primary alcohol ethoxylate surfactant manufactured by Asahi Denka Co., Ltd.)
- PC-6 is a non-ionic surfactant (a polynuclear phenol ethoxylate surfactant manufactured by Asahi Denka Co., Ltd.).
- TMAH in the “fundamental solution” column, is a 2.38% by mass tetramethylammonium hydroxide aqueous solution (ZTMA100, manufactured by Zeon Corporation), which is an alkaline developing solution, and “choline” is a 4% by mass choline aqueous solution (CHOLINE, i.e., trimethyl 2-hydroxyethyl ammonium hydroxide, manufactured by Tama Chemicals Co., Ltd.).
- TN-100 is a non-ionic surfactant (a primary alcohol ethoxylate surfactant manufactured by Asahi Denka Co., Ltd.)
- KF-642 is a non-ionic surfactant (silicone surfactant, manufactured by Shin-Etsu Chemical Co., Ltd.)
- PC-10 is a non-ionic surfactant (a polynuclear phenol ethoxylate surfactant manufactured by Asahi Denka Co., Ltd.)
- L-44 is a polyoxyethylene-polyoxypropylene condensate surfactant (manufactured by Asahi Denka Co., Ltd.)
- GH-200 is a polyoxyethylene alkylether surfactant (manufactured by Asahi Denka Co., Ltd.)
- T-81 is a sorbitan fatty acid ester surfactant (manufactured by Asahi Denka Co., Ltd.), “
- the resist pattern thickening materials 2A through 2D of the present invention prepared as described above were applied over the hole patterns (each having the opening diameter shown in “space size of resist before thickening” in Table 9), which was formed by the ArF resist (“AR1244J” manufactured by JSR Corporation), by a spin coating method, first under the condition of 1,000 rpm/5 s, and then under the condition of 3,500 rpm/40 s. Thereafter, baking was carried out under the condition of 110° C./60 s.
- the resist pattern thickening materials 2A through 2D each were rinsed for 60 seconds using the developing solutions 1 to 13 prepared as described above, and unreacted portions with no interaction or mixing were removed to develop the resist pattern thickened by the resist pattern thickening materials 2A through 2D, respectively.
- thickened resist patterns were formed.
- the sizes of the space patterns formed by the resulting thickened resist patterns are shown in Table 9 together with the initial pattern sizes (the sizes of the space patterns formed by the resist patterns to be thickened before thickening, i.e., the “space size of resist before thickening” in Table 9). Note that, in Table 9, “2A” through “2D” correspond to the resist pattern thickening materials 2A through 2D. Further, in the “space size of resist before thickening” and “space size of resist after thickening” columns, values in parentheses represent 3 ⁇ (three times of standard deviation), and smaller value means that variation of space size is small.)
- Resist pattern thickening materials 3A through 3E having the compositions shown in Table 10 were prepared.
- the “thickening material” means a resist pattern thickening material
- “3A” through “3E” correspond to the resist pattern thickening materials 3A through 3E.
- the unit of the values in parentheses is parts by mass.
- PVA polyvinyl alcohol resin
- KW-3 polyvinyl acetal resin
- PC-6 is a non-ionic surfactant (a polynuclear phenol ethoxylate surfactant manufactured by Asahi Denka Co., Ltd.)
- TN-80 is a non-ionic surfactant (a primary alcohol ethoxylate surfactant manufactured by Asahi Denka Co., Ltd.).
- the solvent component 95 gram of pure water (deionized water) was used as the solvent component.
- the resist pattern thickening materials 3A through 3E of the present invention which were prepared as described above were applied over hole patterns (each having the opening diameter shown in “Space size of resist before thickening” in Table 11) formed by the ArF resist (“AR1244J”, manufactured by JSR Corporation), by a spin coating method, first under the condition of 1,000 rpm/5 s, and then under the condition of 3,500 rpm/40 s. Thereafter, baking was carried out under the condition of 110° C./60 s. Then, the resist pattern thickening materials 3A through 3E each were rinsed for 60 seconds with pure water and unreacted portions with no interaction or mixing were removed to develop the resist pattern thickened by the resist pattern thickening materials 3A through 3E, respectively. Thus, thickened resist patterns were formed.
- the sizes (diameters) of the hole patterns formed by the resulting thickened resist patterns are shown in Table 11 together with the initial pattern sizes (the sizes of the hole patterns formed by the resist patterns to be thickened before thickening, i.e., the “space size (hole diameter) of resist before thickening” in Table 11). Note that, in Table 11, “3A” through “3E” correspond to the resist pattern thickening materials 3A through 3E.
- the resist pattern thickening materials 3A through 3D of the present invention each thickened a resist pattern, enabling the reduction of the inner diameter of the hole patterns.
- the ArF resist (“AR1244J”, manufactured by JSR Corporation) was irradiated with ArF excimer laser light, and then developed to form resist patterns.
- the reticle 200 shown in FIG. 46 has a large difference in the density of patterns.
- the reticle 200 has a pattern (line-space pattern) in which reticle size of a 120 nm space 210 and a 120 nm line 220 repeats 50 times, in a dense pattern portion 200 A; and a pattern (trench pattern) in which reticle size of 12,000 nm (12 ⁇ m) line 230 and a 120 nm space 240 repeats 50 times, in a sparse pattern portion 200 B.
- the pattern layout is such that these patterns are exposed at the same time by one shot irradiation with exposure light.
- thickened resist patterns were formed in a similar way as in the experiment of thickening resist pattern.
- pre-treatment exposure in which the entire surface of the resist pattern to be thickened is irradiated with exposure light, was not carried out before applying the resist pattern thickening material over the resist pattern to be thickened.
- the ArF resist (“AR1244J”, manufactured by JSR Corporation) was irradiated with ArF excimer laser light so that the exposure dose was 42.0 mJ/cm 2 , and then developed to form resist patterns.
- the entire surface of the obtained resist pattern was irradiated with ArF excimer laser light so that the exposure dose was 2.5 mJ/cm 2 (corresponds to the “pre-treatment exposure).
- the resist pattern thickening materials 3A through 3E of the present invention shown in Table 10 were applied over the resist pattern to be thickened, by a spin coating method, first under the condition of 1,000 rpm/5 s, and then under the condition of 3,500 rpm/40 s. Thereafter, baking was carried out under the condition of 110° C./60 s.
- the resist pattern thickening materials 3A through 3E each were rinsed for 60 seconds with pure water and unreacted portions with no interaction or mixing were removed to develop the resist pattern thickened by the resist pattern thickening materials 3A through 3E, respectively. Thus, thickened resist patterns were formed.
- ArF resist (“AX5910”, manufactured by Sumitomo Chemical Co., Ltd.) as the acrylic resist having an alicyclic functional group at the side chain thereof was irradiated with ArF excimer laser light so that the exposure dose was 39.5 mJ/cm 2 , and then developed to form resist patterns.
- resist pattern thickening materials 3A, 3B and 3D shown in Table 11 were applied over the obtained resist pattern to be thickened, and thickened resist patterns were formed, respectively.
- the thickened resist patterns were formed in two aspects: one in which the pre-treatment exposure was not carried out before applying the resist pattern thickening material over the resist pattern to be thickened; and the other in which the pre-treatment exposure was carried out (the exposure dose in the pre-treatment exposure was 2.3 mJ/cm 2 ). Results are shown in Tables 14 and 15, respectively.
- an interlayer dielectric film 12 was formed on a silicon substrate 11 , and as shown in FIG. 10 , a titanium film 13 was formed by a sputtering method on the interlayer dielectric film 12 .
- a resist pattern 14 was formed by a known photolithographic technique. By using the resist pattern 14 as a mask, the titanium film 13 was patterned by reactive ion etching to form openings 15 a . Reactive ion etching was continuously carried out to remove the resist pattern 14 , at the same time, as shown in FIG. 12 , openings 15 b were formed in the interlayer dielectric film 12 by using the titanium film 13 as a mask.
- the titanium film 13 was removed by wet processing, and as shown in FIG. 13 , a TiN film 16 was formed on the interlayer dielectric film 12 by a sputtering method. Subsequently, a Cu film 17 was grown by an electrolytic plating method on the TiN film 16 .
- planarizing was carried out by CMP such that the barrier metal and the Cu film (first metal film) remained only in the groove portions corresponding to the openings 15 b ( FIG. 12 ), and wires 17 a of a first layer were formed.
- an interlayer dielectric film 18 was formed on the wires 17 a of the first layer.
- Cu plugs (second metal films) 19 and TiN films 16 a which connected the wires 17 a of the first layer to upper layer wires which would be formed later, were formed as shown in FIG. 16 .
- a semiconductor device was manufactured which had a multilayer wiring structure having, on the silicon substrate 11 , the wires 17 a of the first layer, wires 20 of a second layer, and wires 21 of a third layer. Note that the barrier metal layers formed beneath the wires of the respective layers are not shown in FIG. 17 .
- the resist pattern 14 is the thickened resist pattern formed in the same way as in the case of Examples 1 to 3, by using the resist pattern thickening material of the present invention.
- Example 5 illustrates an embodiment of the semiconductor device and the manufacturing process thereof of the present invention using a resist pattern thickening material of the present invention.
- resist films 26 , 27 , 29 and 32 are ones thickened by the same method as in Examples 1 to 3 using the resist pattern thickening material of the present invention.
- FIGS. 18 and 19 are top views (plan views) of a FLASH EPROM which is called a FLOTOX type or an ETOX type.
- FIGS. 20 through 28 are schematic sectional views showing a manufacturing process of the FLASH EPROM.
- the left views are schematic sectional views (sectional views taken along lines A-A) of a memory cell unit (a first element region), in a gate width direction (in the X direction in FIGS. 18 and 19 ), in a portion where a MOS transistor having a floating gate electrode is to be formed.
- the central views are schematic sectional views (sectional views taken along lines B-B) of the memory cell unit in a gate length direction (in the Y direction in FIGS.
- the right views are schematic sectional views (sectional views taken along the line A-A in FIGS. 18 and 19 ) of a portion on which a MOS transistor is to be formed in a peripheral circuit unit (a second element region).
- a SiO 2 film was selectively formed in a device isolation region on a p-type Si substrate 22 and thereby yielded a field oxide film 23 of SiO 2 film ( FIG. 20 ).
- a SiO 2 film was formed by thermal oxidation to a thickness of 10 to 30 nm (100 to 300 angstroms) as a first gate dielectric film 24 a in the MOS transistor in the memory cell unit (first element region).
- a SiO 2 film was formed by thermal oxidation to a thickness of 10 to 50 nm (100 to 500 angstroms) as a second gate dielectric film 24 b in the MOS transistor in the peripheral circuit unit (second element region). If the first gate dielectric film 24 a and the second gate dielectric film 24 b should have the same thickness, these oxide films may be simultaneously formed in one step.
- the peripheral circuit unit (the right view in FIG. 20 ) was masked by a resist film 26 to control a threshold voltage for the formation of a MOS transistor having n-type depletion type channels in the memory cell unit (the left and central views in FIG. 20 ).
- a n-type dopant phosphorus (P) or arsenic (As) was injected into a region to be a channel region directly below the floating gate electrode by ion implantation at a dose of 1 ⁇ 10 11 to 1 ⁇ 10 14 cm ⁇ 2 and thereby yielded a first threshold control layer 25 a .
- the dose and conduction type of the dopant can be appropriately selected depending on whether the channel is a depletion type or an accumulation type.
- the memory cell unit (the left and central views in FIG. 21 ) was masked by a resist film 27 to control a threshold voltage for the formation of a MOS transistor having n-type depletion type channels in the peripheral circuit unit (the right view in FIG. 21 ).
- a threshold voltage for the formation of a MOS transistor having n-type depletion type channels in the peripheral circuit unit (the right view in FIG. 21 ).
- phosphorus (P) or arsenic (As) was injected into a region to be a channel region directly below the gate electrode by ion implantation at a dose of 1 ⁇ 10 11 to 1 ⁇ 10 14 cm ⁇ 2 and thereby yielded a second threshold control layer 25 b.
- a first polysilicon film (first conductive film) 28 having a thickness of 50 to 200 nm (500 to 2,000 angstroms) was formed on the entire surface of the article as a floating gate electrode of the MOS transistor of the memory cell unit (the left and central views in FIG. 22 ) and as a gate electrode of the MOS transistor in the peripheral circuit unit (the right view in FIG. 22 ).
- a resist film 29 was then formed, the first polysilicon film 28 was patterned using the resist film 29 as a mask and thereby yielded a floating gate electrode 28 a in the MOS transistor in the memory cell unit (the left and central views in FIG. 23 ).
- the first polysilicon film 28 was patterned in the X direction to be intended dimensions and was not patterned in the Y direction to thereby leave a region to be a source-drain (S/D) layer covered by the resist film 29 .
- S/D source-drain
- the resist film 29 was stripped, a SiO 2 film having a thickness of about 20 to 50 nm (200 to about 500 angstroms) was formed by thermal oxidation and thereby yielded a capacitor dielectric film 30 a so as to cover the floating gate electrode 28 a (the left and central views in FIG. 24 ).
- a capacitor dielectric film 30 b made of a SiO 2 film was also formed on the first polysilicon film 28 in the peripheral circuit unit (the right view in FIG. 24 ).
- These capacitor dielectric films 30 a and 30 b are made of a SiO 2 film alone but they may comprise a multilayer film having two or three layers of SiO 2 film and Si 3 N 4 film.
- a second polysilicon film (second conductive film) 31 was formed to a thickness of 50 to 200 nm (500 to 2,000 angstroms) so as to cover the floating gate electrode 28 a and the capacitor dielectric film 30 a ( FIG. 24 ).
- the second polysilicon film 31 serves as a control gate electrode.
- the memory cell unit (the left and central views in FIG. 25 ) was masked by a resist film 32 , the second polysilicon film 31 and the capacitor dielectric film 30 b in the peripheral circuit unit (the right view in FIG. 25 ) were stripped in turn by etching to thereby expose the first polysilicon film 28 from the surface.
- the second polysilicon film 31 , the capacitor dielectric film 30 a , and the first polysilicon film 28 a of the memory cell unit were patterned in the Y direction to target dimensions of a first gate unit 33 a using the resist film 32 as a mask.
- a multilayer assemblage of a control gate electrode 31 a , a capacitor dielectric film 30 c , and a floating gate electrode 28 c having a width of about 1 ⁇ m in the Y direction was formed.
- the first polysilicon film 28 in the peripheral circuit unit (the right view in FIG. 26 ) was patterned to target dimensions of a second gate unit 33 b and thereby yielded a gate electrode 28 b about 1 ⁇ m wide.
- Phosphorus (P) or arsenic (As) was injected into the element forming region of the Si substrate 22 by ion implantation at a dose of 1 ⁇ 10 14 to 1 ⁇ 10 16 cm ⁇ 2 using, as a mask, the multilayer assemblage of the control gate electrode 31 a , the capacitor dielectric film 30 c , and the floating gate electrode 28 c in the memory cell unit (the left and central views in FIG. 27 ) and thereby yielded n-type source and drain (S/D) region layers 35 a and 35 b .
- Phosphorus (P) or arsenic (As) was injected into the element forming region of the Si substrate 22 by ion implantation at a dose of 1 ⁇ 10 14 to 1 ⁇ 10 16 cm ⁇ 2 using, as a mask, the multilayer assemblage of the control gate electrode 31 a , the capacitor dielectric film 30 c , and the floating gate electrode 28 c in the memory cell unit (the left and central views in FIG. 27 ) and
- phosphorus (P) or arsenic (As) as an n-type dopant was injected into the element forming region of the Si substrate 22 by ion implantation at a dose of 1 ⁇ 10 14 to 1 ⁇ 10 16 cm ⁇ 2 using the gate electrode 28 b in the peripheral circuit unit (the right view in FIG. 27 ) as a mask and thereby yielded S/D region layers 36 a and 36 b.
- a phosphate-silicate glass film (PSG film) about 500 nm (5000 angstroms) thick was formed as an interlayer dielectric film 37 so as to cover the first gate unit 33 a in the memory cell unit (the left and central views in FIG. 28 ) and the second gate unit 33 b in the peripheral circuit unit (the right view in FIG. 28 ).
- PSG film phosphate-silicate glass film
- contact holes 38 a , 38 b , 39 a , and 39 b were formed on the interlayer dielectric film 37 on the S/D region layers 35 , 35 b , 36 a , and 36 b , respectively.
- S/D electrodes 40 a , 40 b , 41 a and 41 b were then formed respectively.
- the hole pattern was formed with the resist material and then thickened the resist pattern with the resist pattern thickening material according to the present invention, thereby forming fine space patterns (hole patterns). Thereafter, the contact holes were manufactured in accordance with a conventional method.
- the FLASH EPROM as a semiconductor device was manufactured ( FIG. 28 ).
- the second gate dielectric film 24 b in the peripheral circuit unit (the right views in FIGS. 20 through 28 ) remains being covered by the first polysilicon film 28 or the gate electrode 28 b after its formation (the right views in FIGS. 20 through 28 ) and thereby keeps its initial thickness. Accordingly, the thickness of the second gate dielectric film 24 b can be easily controlled, and the concentration of a conductive dopant can be easily controlled for the control of the threshold voltage.
- the first gate unit 33 a is formed by initially patterning in the gate width direction (the X direction in FIGS. 18 and 19 ) to a set width and then patterning in the gate length direction (the Y direction in FIGS. 18 and 19 ) to a target width.
- the first gate unit 33 a may be formed by initially patterning in the gate length direction (the Y direction in FIGS. 18 and 19 ) to a set width and then patterning in the gate width direction (the X direction in FIGS. 18 and 19 ) to a target width.
- FIGS. 29 , 30 and 31 Another FLASH EPROM was manufactured in the same way as in the above embodiment, except that the steps subsequent to the step of FIG. 28 were changed to those shown in FIGS. 29 , 30 and 31 .
- This manufacture is similar to the above embodiment, except for the followings. Specifically, a tungsten (W) film or a titanium (Ti) film about 200 nm (2,000 angstroms) thick was formed as a refractory metal film (fourth conductive film) 42 on the second polysilicon film 31 in the memory cell unit (the left and central views in FIG. 29 ) and the first polysilicon film 28 in the peripheral circuit unit (the right view in FIG. 29 ) and thereby yielded a polycide film.
- FIGS. 29 were carried out in the same manner as in FIGS. 26 , 27 , and 28 and a detail description thereof is omitted.
- the same components in FIGS. 29 , 30 , and 31 as in FIGS. 26 , 27 , and 28 have the same reference numerals.
- the above-manufactured FLASH EPROM has the refractory metal films (fourth conductive films) 42 a and 42 b on the control gate electrode 31 a and the gate electrode 28 b and can thereby further reduce its electrical resistance.
- the refractory metal films 42 a and 42 b are used as the fourth conductive films.
- refractory metal silicide films such as titanium silicide (TiSi) films can be used.
- a second gate unit 33 c in the peripheral circuit unit (second element region) has a multilayer structure comprising a first polysilicon film (first conductive film) 28 b , a SiO 2 film (capacitor dielectric film) 30 d , and a second polysilicon film (second conductive film) 31 b arranged in this order as in the first gate unit 33 a in the memory cell unit (the left and central views in FIG. 32 ).
- the first polysilicon film 28 b and the second polysilicon film 31 b are bridged and thereby form a gate electrode ( FIGS. 33 and 34 ).
- the first polysilicon film 28 b and the second polysilicon film 31 b are bridged by forming an opening 52 a penetrating the first polysilicon film (first conductive film) 28 b , the SiO 2 film (capacitor dielectric film) 30 d and the second polysilicon film (second conductive film) 31 b at another portion than the second gate unit 33 c shown in FIG. 32 , for example, on the dielectric film 54 , and filling the opening 52 a with a refractory metal film (third conductive film) 53 a such as a W film or a Ti film.
- a refractory metal film (third conductive film) 53 a such as a W film or a Ti film.
- the first polysilicon film 28 b and the second polysilicon film 31 b may be bridged by forming an opening 52 b penetrating the first polysilicon film (first conductive film) 28 b and the SiO 2 film (capacitor dielectric film) 30 d , thereby exposing the lower first polysilicon film 28 b at the bottom of the opening 52 b , and filling the opening 52 b with a refractory metal film 53 b such as a W film or a Ti film.
- a refractory metal film 53 b such as a W film or a Ti film.
- the second gate unit 33 c in the peripheral circuit unit has the same structure as the first gate unit 33 a in the memory cell unit. Accordingly, the memory cell unit and the peripheral circuit unit can be formed by the same step to thereby efficiently simplify steps of the manufacture process.
- the third conductive film 53 a or 53 b and the refractory metal film (fourth conductive film) 42 were formed independently. Alternatively, these films may be formed simultaneously as a refractory metal film in common.
- Example 6 relates to the manufacture of a magnetic head as an application embodiment of the resist pattern formed using the resist pattern thickening material of the present invention.
- after-mentioned resist patterns 102 and 126 are thickened resist patterns formed by the same process as in Example 1 using the resist pattern thickening material of the present invention.
- FIGS. 35 through 38 show steps for the manufacture of the magnetic head.
- a resist film was formed to a thickness of 6 ⁇ m on an interlayer dielectric layer 100 , was exposed to light, was developed and thereby yielded a resist pattern 102 having an opening pattern for the formation of a spiral thin film magnetic coil ( FIG. 35 ).
- a plated underlayer 106 comprising a multilayer structure comprising a Ti contact film 0.01 ⁇ m thick and a Cu contact film 0.05 ⁇ m thick was formed by vapor deposition on the resist pattern 102 and on the exposed surface of the interlayer dielectric layer 100 at the bottom of the opening 104 in a portion where the resist pattern 102 was not formed ( FIG. 36 ).
- a Cu-plated film 3 ⁇ m thick as a thin-film conductor 108 was formed on the surface of the plated underlayer 106 above the exposed surface of the interlayer dielectric layer 100 at the bottom of the opening 104 in a portion where the resist pattern 102 was not formed ( FIG. 37 ).
- the resist pattern 102 was dissolved, was removed by lift-off from the interlayer dielectric layer 100 and thereby yielded a spiral thin-film magnetic coil 110 derived from the spiral pattern of the thin-film conductor 108 ( FIG. 38 ).
- the magnetic head was manufactured.
- the above-manufactured magnetic head has the thin film magnetic coil 110 with fine and precise dimensions, since the fine spiral pattern was formed by using the resist pattern 102 thickened using the resist pattern thickening material of the present invention.
- the magnetic head can be satisfactorily manufactured in mass production.
- Another magnetic head was manufactured by steps shown in FIGS. 39 through 44 .
- a gap layer 114 was formed by sputtering so as to cover a ceramic non-magnetic substrate 112 ( FIG. 39 ).
- the non-magnetic substrate 112 had an insulating layer of silicon oxide, a conductive underlayer of a Ni—Fe Permalloy formed by sputtering, and a lower magnetic layer of a Ni—Fe permalloy formed in advance on its surface. These layers are not shown in the figures.
- a resin dielectric film 116 was formed from a thermosetting resin in a set region on the gap layer 114 except a region to be a magnetic tip (magnetic head) of the lower magnetic layer (not shown). A resist composition was then applied to the resin dielectric film 116 and thereby yielded a resist film 118 .
- the resist film 118 was exposed to light, was developed and thereby yielded a spiral pattern ( FIG. 40 ).
- the spirally patterned resist film 118 was subjected to thermal curing at several hundred Celsius degrees for about one hour and thereby yielded a protruded first spiral pattern 120 ( FIG. 41 ).
- a conductive workpiece surface 122 of Cu was formed so as to cover the surface of the first spiral pattern 120 .
- a resist material was applied to the conductive workpiece surface 122 by spin coating and thereby yielded a resist film 124 thereon. Subsequently, the resist film 124 was patterned corresponding to the first spiral pattern 120 and thereby yielded a resist pattern 126 ( FIG. 42 ).
- a Cu conductive layer 128 was formed by plating on the exposed surface of the conductive workpiece surface 122 in a portion where the resist pattern 126 was not formed ( FIG. 43 ).
- the resist pattern 126 was lifted off from the conductive workpiece surface 122 by dissolving and thereby yielded a spiral thin-film magnetic coil 130 derived from the Cu conductive layer 128 ( FIG. 44 ).
- the magnetic head as shown in a plan view of FIG. 45 was manufactured.
- the magnetic head has a magnetic layer 132 on the resin dielectric film 116 with the thin-film magnetic coil 130 on its surface.
- the above-manufactured magnetic head has the thin-film magnetic coil 130 with fine and precise dimensions, since the fine spiral pattern was formed by using the resist pattern 126 thickened by the resist pattern thickening material of the present invention.
- the magnetic head can be satisfactorily manufactured in mass production.
- the present invention can solve the conventional problems and achieve the above-mentioned objects.
- the present invention can provide a resist pattern thickening material, which can utilize ArF excimer laser light as exposure light during patterning; which, when applied over a resist pattern to be thickened, can efficiently thicken the resist pattern to be thickened, e.g., in form of line-space pattern, regardless of the size of the resist pattern to be thickened; which has high etch resistance; and which is suited for forming a fine space pattern of resist, exceeding exposure limits or resolution limits of light sources of available exposure devices at low cost, easily and efficiently.
- the present invention can also provide a process for forming a resist pattern which, during patterning a resist pattern to be thickened, can utilize ArF excimer laser light as a light source; which can thicken a resist pattern to be thickened, e.g., in form of line-space pattern, regardless of the size of the resist pattern; and which is suited for forming a fine space pattern of resist, exceeding exposure limits or resolution limits of light sources of available exposure devices at low cost, easily and efficiently.
- the present invention can provide a process for manufacturing a semiconductor device in which, during patterning a resist pattern to be thickened, ArF excimer laser light can be utilized as a light source; a fine space pattern of resist, exceeding exposure limits or resolution limits of light sources of available exposure devices, can be formed; and high-performance semiconductor devices having fine wiring patterns formed by using the space pattern of resist can be efficiently mass produced, and is to provide a high-performance semiconductor which is manufactured by the process for manufacturing a semiconductor device and has fine wiring patterns.
- the resist pattern thickening material of the present invention is suitably utilized for thickening a resist pattern formed of ArF resist or the like and for forming patterns, i.e., space pattern of resist, or wiring pattern finely, exceeding the exposure limits or resolutions of light sources of available exposure devices, while using light as a radiation source during patterning.
- the resist pattern thickening material of the present invention is suitably applicable for a variety of patterning method, semiconductor device manufacturing process, etc. and particularly suitably applicable for a process for forming a resist pattern and process for manufacturing a semiconductor device of the present invention.
- the process for forming a resist pattern of the present invention is suitably applicable for manufacturing functional parts such as mask patterns, reticule patterns, magnetic heads, LCDs (liquid crystal displays), PDPs (plasma display panels), SAW filters (surface acoustic wave filters); optical parts used in connecting optical wiring; fine parts such as microactuators; semiconductor devices; and the like, and can be suitably employed in the process for manufacturing a semiconductor device of the present invention.
- functional parts such as mask patterns, reticule patterns, magnetic heads, LCDs (liquid crystal displays), PDPs (plasma display panels), SAW filters (surface acoustic wave filters); optical parts used in connecting optical wiring; fine parts such as microactuators; semiconductor devices; and the like, and can be suitably employed in the process for manufacturing a semiconductor device of the present invention.
- the process for manufacturing a semiconductor device of the present invention is suitably applicable for a manufacturing procedure of various semiconductor devices, such as flash memory, DRAM, FRAM and the like.
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Abstract
The present invention provides a resist pattern thickening material, which can utilize ArF excimer laser light; which, when applied over a resist pattern to be thickened e.g., in form of lines and spaces pattern, can thicken the resist pattern to be thickened regardless of the size of the resist pattern to be thickened; and which is suited for forming a fine space pattern or the like, exceeding exposure limits. The present invention also provides a process for forming a resist pattern and a process for manufacturing a semiconductor device, wherein the resist pattern thickening material of the present invention is suitably utilized.
Description
This is a Continuation application of application Ser. No. 11/335,716, filed Jan. 20, 2006, which is a Continuation-in-part (CIP) of application Ser. No. 11/138,819, filed May 27, 2005, now abandoned.
This application is based upon and claims the benefits of the priority from the prior Japanese Patent Application No. 2005-042884, filed on Feb. 18, 2005 and Japanese Patent Application No. 2005-366991, filed on Dec. 20, 2005, the entire contents of which are incorporated herein by reference.
1. Field of the Invention
The present invention relates to a resist pattern thickening material, which is applied over a resist pattern that is formed in manufacturing a semiconductor device and is capable of thickening the resist pattern, and which may form a fine space pattern that exceeds exposure limits of light sources of available exposure devices. The present invention also relates to a process for forming a resist pattern, a semiconductor device, and a process for manufacturing the semiconductor device that utilize the resist pattern thickening material respectively.
2. Description of the Related Art
Semiconductor integrated circuits are becoming more highly integrated, and LSIs and VLSIs are being put into practical use. Accompanying this trend, the wiring patterns extend to regions of 0.2 μm or less, and the smallest patterns extend to regions of 0.1 μm or less. A lithographic technique is extremely important in forming fine wiring patterns. In the lithographic technique, a substrate to be processed on which a thin film is formed, is coated by a resist film, is selectively exposed, and thereafter, is developed to thereby form a resist pattern. Dry etching is carried out by using the resist pattern as a mask, and thereafter, by removing the resist pattern, the desired pattern is obtained. In forming a fine wiring pattern utilizing the lithographic technique, it is necessary to make the light source of the exposure device be a short wavelength, as well as to develop resist materials which have high resolution and is suitable to the characteristics of the light source.
However, in order to make a light source of an exposure device be a short wavelength, it is necessary to improve the exposure device, which results in very high costs. Further, the development of new resist materials suitable for an exposure with light of short wavelength is not easy.
To overcome the above technical problems, there has been proposed a technique wherein a resist pattern formed of a conventional resist material is formed and thickened by using a resist pattern thickening material (hereinafter, the resist pattern thickening material being sometimes referred to as “resist swelling material”) capable of forming a fine space pattern. For instance, Japanese Patent Application Laid-Open (JP-A) No. 10-73927 discloses a technique called RELACS. According to the disclosure, resist patterns are formed by exposing a resist of positive resist or negative resist using KrF (krypton fluoride) excimer laser light of wavelength 248 nm which is deep ultraviolet light as the exposure light. Thereafter, by means of a water-soluble resin composition, a coated film is provided so as to cover the resist pattern. The coated film and the resist pattern are made to interact at the interface thereof using the residual acid within the material of the resist pattern, and the resist pattern is thickened (hereinafter, the thickening of the resist pattern being sometimes referred to as “swelling”). In this way, the distance between the resist patterns is shortened, and a fine space pattern is formed. Thereafter, a desired pattern (e.g. wiring pattern) having the same dimension as the space pattern is formed.
In the RELACS technique, however, there is the following problems. The KrF resist for use is formed of an aromatic resin composition including a novolak resin, naphthoquinonediazide resin or the like. An aromatic ring contained in the aromatic resin composition allows KrF excimer laser light (wavelength: 248 nm) to pass through, but absorbs ArF excimer laser light (wavelength: 193 nm) having a shorter wavelength than the KrF excimer laser light and does not allow the ArF excimer laser light to pass through. Therefore, when the KrF resist is used, ArF excimer laser light cannot be used as the exposure light, which makes it impossible to from a finer wiring pattern, etc. Moreover, there is a problem in the RELACS technique that the resist swelling material is effective for thickening or swelling the KrF resist but not for thickening or swelling the ArF resist. In addition, the resist swelling material has low etch resistance itself. Thus, when ArF resist pattern having low etch resistance is swelled, the same dimension as the swelled pattern cannot be patterned on the substrate to be processed. Furthermore, even if KrF resist having relatively satisfactory etch resistance is swelled, in such cases where etching condition is severe, where the KrF resist pattern is fine, where the resist film is thin, or the like, there is a problem that etching cannot be precisely carried out and pattern having the same dimension as the swelled pattern cannot be obtained.
From the standpoint of forming a fine wiring pattern, it is desirable to be able to use light of a shorter wavelength than KrF excimer laser light, e.g., ArF excimer laser light, as the light source of the exposure device. In case x-ray or electron beam having a shorter wavelength than the ArF excimer laser light is used as exposure light of the resist to form the pattern, however, it results in high cost and low productivity. Thus, the utilization of ArF excimer laser light is desired.
As mentioned above, in the RELACS technique, the aforementioned resist swelling material does not efficiently work on ArF resist pattern. The present inventors have proposed a resist pattern thickening material capable of forming a fine pattern by improving affinity with the ArF resist pattern caused by a surfactant (JP-A No. 2003-131400). However, the composition of this resist pattern thickening material sometimes causes dependency on the pattern size before thickening, that is, when the pattern size before thickening increases, the reduced amount of the pattern size after thickening may increase in proportion to the increase. Thus, there was a problem that when the resist pattern thickening material was used for a line-space pattern, on a wiring layer of LOGIC LSI where various sizes of resist patterns are utilized, the burden on designing an exposure mask could not fully be alleviated.
Accordingly, the current situation is that there has not yet been developed a technique which can use ArF excimer laser light as the light source of an exposure device during patterning, which can sufficiently thicken ArF resist pattern or the like that cannot be thickened by using the aforementioned resist swelling material used in the RELACS technique, and which can easily form a fine space pattern or a wiring pattern at low cost. Therefore, it is desired that such technique be developed.
An object of the present invention is to provide a resist pattern thickening material, which can utilize ArF excimer laser light as exposure light during patterning; which, when applied over a resist pattern to be thickened, can efficiently thicken the resist pattern to be thickened, e.g., in form of lines and spaces pattern, regardless of the size of the resist pattern to be thickened; which has high etch resistance; and which is suited for forming a fine space pattern of resist, exceeding exposure limits or resolution limits of light sources of available exposure devices at low cost, easily and efficiently.
Another object of the present invention is to provide a process for forming a resist pattern which, during patterning a resist pattern to be thickened, can utilize ArF excimer laser light as a light source; which can thicken a resist pattern to be thickened, e.g., in form of lines and spaces pattern, regardless of the size of the resist pattern; and which is suited for forming a fine space pattern of resist, exceeding exposure limits or resolution limits of light sources of available exposure devices at low cost, easily and efficiently.
Yet another object of the present invention is to provide a process for manufacturing a semiconductor device in which, during patterning a resist pattern to be thickened, ArF excimer laser light can be utilized as a light source; a fine space pattern of resist, exceeding exposure limits or resolution limits of light sources of available exposure devices, can be formed; and high-performance semiconductor devices having fine wiring patterns formed by using the space pattern of resist can be efficiently mass produced, and is to provide a high-performance semiconductor which is manufactured by the process for manufacturing a semiconductor device and has fine wiring patterns.
In view of the above-mentioned problems, inventors of the present invention have investigated vigorously, and have found the following experiences or discoveries. Specifically, when a resist pattern is swelled using a conventional resist swelling material, it was impossible to thicken the resist pattern without utilizing residual acid. However, they have found that when a resin, benzyl alcohol, benzylamine, derivatives thereof, and the like are used as a composition of the resist pattern thickening material, the reaction can be easily controlled because crosslinking reaction does not occur, and resist patterns can be thickened without depending on the sizes thereof. In addition, they have found that since the benzyl alcohol or the like has an aromatic ring at a portion of its structure, a resist pattern thickening material having high etch resistance can be obtained, and have accomplished the present invention.
The present invention is based on such experiences or discoveries; how to solve aforesaid problems is described in attached claims.
The resist pattern thickening material of the present invention includes a resin and a compound represented by the general formula (1):
where, “X” is a functional group represented by the following structural formula (1). “Y” represents at least any one of a hydroxyl group, an amino group, an amino group substituted by an alkyl group, an alkoxy group, an alkoxycarbonyl group and an alkyl group, and the number of the substitution is an integer of 0 to 3. “m” represents an integer of 1 or more and “n” represents an integer of 0 or more:
where, “R1” and “R2” may be the same or different, and each represent a hydrogen atom or a substituent group. “Z” represents at least any one of a hydroxyl group, an amino group, an amino group substituted by an alkyl group, and an alkoxy group, and the number of the substitution is an integer of 0 to 3.
When the resist pattern thickening material is applied over a resist pattern to be thickened, the portions of the applied resist pattern thickening material in a vicinity of the interface with the resist pattern to be thickened infiltrate into the resist pattern and cause an interaction, i.e., mixing, with the material of the resist pattern to be thickened. Then, because the affinity is high between the resist pattern thickening material and the resist pattern to be thickened, a surface layer or mixing layer, where the resist pattern thickening material and the resist pattern are mixed, is efficiently formed on the surface of the resist pattern as the inner layer. As a result, the resist pattern to be thickened is efficiently thickened by the resist pattern thickening material. The resist pattern thickened in this way (hereinafter sometimes referring to as “thickened resist pattern”) is thickened uniformly by the resist pattern thickening material. Thus, the space pattern of resist formed by the thickened resist pattern a fine space pattern of resist has a fine structure, exceeding exposure limits or resolution limits. The term “space pattern” is hereby defined as a hole, trench, recess, or any other empty space that is formed by developing a resist. Since the resist pattern thickening material of the present invention includes the compound represented by the general formula (1), uniform thickening effect is derived without being affected by the types of resist material or sizes of the resist pattern. Further, since the compound represented by the general formula (1) includes an aromatic ring, the resist pattern thickening material of the present invention has high etch resistance. Thus, the resist pattern thickening material of the present invention can be suitably utilized for forming a resist pattern, such as a lines and spaces pattern, on a wiring layer of LOGIC LSI where various sizes of resist patterns are utilized.
The process for forming a resist pattern of the present invention includes forming a resist pattern to be thickened, and then applying a resist pattern thickening material of the present invention so as to cover the surface of the resist pattern to be thickened. In the process for forming a resist pattern of the present invention, a resist pattern to be thickened is formed and then, when the resist pattern thickening material is applied over the resist pattern to be thickened, the portions of the applied resist pattern thickening material in a vicinity of the interface with the resist pattern to be thickened infiltrate into the resist pattern and cause an interaction or mixing with the material of the resist pattern. Thus, a surface layer or mixing layer, where the resist pattern thickening material and the resist pattern are mixed, is formed on the surface of the resist pattern as the inner layer. The resulting thickened resist pattern is uniformly thickened by the resist pattern thickening material. Thus, the space pattern of resist formed by the thickened resist pattern a fine space pattern of resist has a fine structure, exceeding exposure limits or resolution limits. Since the resist pattern thickening material includes the compound represented by the general formula (1), uniform thickening effect is derived without being affected by the types of resist material or sizes of the resist pattern. Further, the aromatic ring in the compound represented by the general formula (1) provides high etch resistance. Thus, the process for forming a resist pattern can be suitably utilized for forming a resist pattern, such as a line-space pattern, on a wiring layer of LOGIC LSI where not only a contact hole pattern, but also various sizes of resist patterns are utilized.
The process for manufacturing a semiconductor device of the present invention includes a step of forming a thickened resist pattern on a surface of a workpiece using the process for forming a resist pattern of the present invention, namely, a step of forming a thickened resist pattern by forming a resist pattern to be thickened on a surface of a workpiece, and then by applying a resist pattern thickening material so as to cover the surface of the resist pattern to be thickened; and a step of patterning the surface of the workpiece by etching the surface of the workpiece using the thickened resist pattern as a mask. In the process for manufacturing a semiconductor device, initially, in the step of forming a thickened resist pattern, a resist pattern to be thickened is formed on the surface of the workpiece serving as a subject on which wiring patterns, etc. is formed, and then the resist pattern thickening material of the present invention is applied so as to cover the surface of the resist pattern to be thickened. Then, the portions of the applied resist pattern thickening material in a vicinity of the interface with the resist pattern to be thickened infiltrate into the resist pattern and cause an interaction or mixing with the material of the resist pattern. Thus, a surface layer or mixing layer, where the resist pattern thickening material and the resist pattern are mixed, is formed on the surface of the resist pattern as the inner layer. The resulting thickened resist pattern is uniformly thickened by the resist pattern thickening material. Thus, the space pattern of resist formed by the thickened resist pattern has a fine structure, exceeding exposure limits or resolution limits. Since the resist pattern thickening material includes the compound represented by the general formula (1), uniform thickening effect is derived without being affected by the types of resist material or sizes of the resist pattern. Further, the aromatic ring in the compound represented by the general formula (1) provides high etch resistance. Thus, thickened resist patterns such as a line-space pattern, on a wiring layer of LOGIC LSI where not only a contact hole pattern, but also various sizes of resist patterns are utilized, can be formed easily and precisely.
In the step of patterning, by etching the surface of the workpiece using the thickened resist pattern formed by the step of forming a thickened resist pattern as a mask, the surface of the workpiece is patterned finely and precisely with accurate dimension, thus high-quality and high performance semiconductor devices can be produced efficiently having a wiring pattern with fine, precise, and accurate dimension.
The semiconductor device of the present invention is manufactured by the process for manufacturing a semiconductor device of the present invention. The semiconductor device has patterns, for example, wiring patterns, with fine, precise, and accurate dimension, and is high quality and high performance.
(Resist Pattern Thickening Material)
The resist pattern thickening material of the present invention comprises at least a resin and a compound represented by the following general formula (1), and may further comprise a surfactant, a phase transfer catalyst, a water-soluble aromatic compound, a resin containing an aromatic compound in a portion thereof, an organic solvent and other components suitably selected according to necessity.
In the general formula (1), “X” is a functional group represented by the following structural formula (1). “Y” represents at least any one of a hydroxyl group, an amino group, an amino group substituted by an alkyl group, an alkoxy group, an alkoxycarbonyl group and an alkyl group, and the number of the substitution is an integer of 0 to 3. “m” represents an integer of 1 or more and “n” represents an integer of 0 or more.
In the structural formula (1), “R1” and “R2” may be the same or different, and each represent a hydrogen atom or a substituent group. “Z” represents at least any one of a hydroxyl group, an amino group, an amino group substituted by an alkyl group, and an alkoxy group, and the number of the substitution is an integer of 0 to 3.
The resist pattern thickening material of the present invention is water-soluble or alkali-soluble.
The water-solubility of the resist pattern thickening material is not particularly limited and suitably adjusted according to the purpose, but it is preferable that the resist pattern thickening material dissolves 0.1 g or more in 100 g of water at a water-temperature of 25° C.
The alkali-solubility of the resist pattern thickening material is not particularly limited and suitably adjusted according to the purpose, but it is preferable that the resist pattern thickening material dissolves 0.1 g or more in 100 g of a 2.38% by mass tetramethyl ammonium hydroxide (TMAH) aqueous solution at a solution temperature of 25° C.
The resist pattern thickening material of the present invention may be an aqueous solution, a colloid liquid, an emulsion liquid or the like, but an aqueous solution is preferable.
—Resin—
The resin is not particularly limited, and can be appropriately selected according to the purpose. However, it is preferable that the resin is water-soluble or alkali-soluble.
The resin preferably comprises two or more polar groups in view of exhibiting an excellent water-solubility or alkali-solubility.
The polar group is not particularly limited and can be appropriately selected according to the purpose. Preferable examples thereof are a hydroxyl group, an amino group, a sulfonyl group, a carbonyl group, a carboxyl group, derivatives thereof, and the like. The polar group may be contained singly, or two or more may be contained in combination.
When the resin is water-soluble, the water-soluble resin preferably exhibits water solubility of 0.1 g or more in 100 g of water at a water temperature of 25° C.
Examples of the water-soluble resin include polyvinyl alcohol, polyvinyl acetal, polyvinyl acetate, polyacrylic acid, polyvinyl pyrolidone, polyethyleneimine, polyethylene oxide, styrene-maleic acid copolymer, polyvinylamine, polyallylamine, an oxazoline group-containing water-soluble resin, a water-soluble melamine resin, a water-soluble urea resin, an alkyd resin, a sulfonamide resin, and the like.
When the resin is alkali-soluble, the alkali-soluble resin preferably exhibits alkali solubility of 0.1 g or more in 100 g of a 2.38% by mass tetramethyl ammonium hydroxide (TMAH) aqueous solution at a solution temperature of 25° C.
Examples of the alkali-soluble resin are novolak resins, vinylphenol resins, polyacrylic acids, polymethacrylic acids, poly p-hydroxyphenylacrylate, poly p-hydroxyphenylmethacrylate, copolymer thereof, and the like.
The resin may be used singly, or two or more thereof may be used in combination. Among these, polyvinyl alcohol, polyvinyl acetal, polyvinyl acetate or the like is preferred. It is more preferable that the resin contains the polyvinyl acetal at 5% by mass to 40% by mass.
In the present invention, the resin may be a resin having a cyclic structure at least at a portion thereof, and use of such resins has an advantage that high etch resistance can be imparted to the resist pattern thickening material.
In the present invention, the resin having a cyclic structure at least at a portion thereof may be used singly, and two or more may be used in combination. Moreover, it may be used together with the resins.
The resin having a cyclic structure at a portion thereof is not particularly limited and can be appropriately selected according to the purpose. Suitable examples thereof include polyvinyl aryl acetal resins, polyvinyl aryl ether resins, polyvinyl aryl ester resins, and derivatives thereof. It is preferable to use at least one selected therefrom. From the standpoint of exhibiting water solubility or alkali solubility to an appropriate degree, such a resin that contains an acetyl group is more preferable.
The polyvinyl aryl acetal resins are not particularly limited and may be appropriately selected according to the purpose. Examples thereof include β-resorcine acetal and the like.
The polyvinyl aryl ether resins are not particularly limited and may be appropriately selected according to the purpose. Examples thereof include 4-hydroxybenzyl ether and the like.
The polyvinyl aryl ester resins are not particularly limited and may be appropriately selected according to the purpose. Examples thereof include benzoate and the like.
The method of producing the polyvinyl aryl acetal resins is not particularly limited and may be appropriately selected according to the purpose. A suitable example thereof is a known method of producing using a polyvinyl acetal reaction, or the like. Such a producing method is a method in which, for example, polyvinyl alcohol, and aldehyde in an amount needed stoichiometrically for the polyvinyl alcohol are made to undergo an acetalizing reaction in the presence of an acid catalyst. Specifically, suitable examples are the methods disclosed in U.S. Pat. Nos. 5,169,897 and 5,262,270, Japanese Patent Application Laid-Open (JP-A) No. 05-78414, and the like.
The method of producing the polyvinyl aryl ether resins is not particularly limited and may be appropriately selected according to the purpose. Examples thereof are a copolymerization reaction of a corresponding vinyl aryl ether monomer and vinyl acetate; an etherification reaction of polyvinyl alcohol and an aromatic compound having a halogenated alkyl group in the presence of a basic catalyst (Williamson ether synthesis reaction); and the like. Specifically, suitable examples are the methods disclosed in JP-A Nos. 2001-40086, 2001-181383, 06-116194, and the like.
The method of producing the polyvinyl aryl ester resins is not particularly limited and may be appropriately selected according to the purpose. Examples thereof are a copolymerization reaction of a corresponding vinyl aryl ester monomer and vinyl acetate; an esterification reaction of polyvinyl alcohol and an aromatic carboxylic acid halide compound in the presence of a basic catalyst; and the like.
The cyclic structure in the resin having a cyclic structure at a portion thereof, is not particularly limited and may be appropriately selected according to the purpose. Examples thereof are monocyclic structure such as benzene, polycyclic structure such as bisphenol, condensed ring such as naphthalene, specifically, aromatic compounds, alicyclic compounds, heterocyclic compounds, and the like are preferred. In the resin having a cyclic structure at a portion thereof, these cyclic structure may be used singly or two or more thereof may be used in combination.
Examples of the aromatic compound are polyhydroxy phenol compounds, polyphenol compounds, aromatic carboxylic acid compounds, naphthalene polyhydroxy compounds, benzophenone compounds, flavonoid compounds, porphin, water-soluble phenoxy resins, aromatic-containing water-soluble dyes, derivatives thereof, glycosides thereof, and the like. The aromatic compound may be used singly, or two or more may be used in combination.
Examples of the polyhydroxy phenol compounds are resorcinol, resorcin[4]arene, pyrogallol, gallic acid, derivatives and glycosides thereof, and the like.
Examples of the polyphenol compounds include catechin, anthocyanidin (pelargonidin-type (4′-hydroxy), cyanidin-type (3′,4′-dihydroxy), delphinidin-type (3′,4′,5′-trihydroxy)), flavan-3,4-diol, proanthocyanidin, and the like.
Examples of the aromatic carboxylic acid compounds include salicylic acid, phthalic acid, dihydroxy benzoic acid, tannin, and the like.
Examples of the naphthalene polyhydroxy compounds include naphthalene diol, naphthalene triol, and the like.
Examples of the benzophenone compounds include alizarin yellow A, and the like.
Examples of the flavonoid compounds include flavone, isoflavone, flavanol, flavonone, flavonol, flavan-3-ol, aurone, chalcone, dihydrochalcone, quercetin, and the like.
Examples of the alicyclic compound are polycycloalkanes, cycloalkanes, fused rings, derivatives and glycosides thereof, and the like. These may be used singly, or two or more may be used in combination.
Examples of the polycycloalkane are norbornane, adamantane, norpinane, sterane, and the like.
Examples of the cycloalkane are cyclopentane, cyclohexane, and the like.
Examples of the fused rings are steroids and the like.
Suitable examples of the heterocyclic compound include a nitrogen-containing cyclic compound such as pyrrolidine, pyridine, imidazole, oxazole, morpholine, pyrrolidone, and the like; and an oxygen-containing cyclic compound such as furan, pyran, saccharides such as pentose and hexose, and the like.
Preferable examples of the resin having a cyclic structure at a portion thereof are ones having at least one selected from the functional groups such as a hydroxyl group, a cyano group, an alkoxyl group, a carboxyl group, an amino group, an amide group, an alkoxycarbonyl group, a hydroxyalkyl group, a sulphonyl group, an acid anhydride group, a lactone group, a cyanate group, and a ketone group etc.; and the saccharic derivatives from the viewpoint of water-solubility. The one having at least one functional group selected from the hydroxyl group, amino group, sulphonyl group, carboxyl group, and their derivatives is more preferable.
The molar content ratio of the cyclic structure in the resin having a cyclic structure at a portion thereof, is not particularly limited as long as it does not affect the etch resistance, and may be appropriately selected according to the purpose. In the case where high etch resistance is needed, it is preferably 5 mol % or more, and more preferably, 10 mol % or more.
The molar content ratio of the cyclic structure in the resin having a cyclic structure at a portion thereof, can be measured by means of NMR etc.
The content of the resin (including the resin having a cyclic structure at a portion thereof) in the resist pattern thickening material can be suitably determined according to the type, content, etc., of the resin without the cyclic structure, the compound represented by the general formula (1), the surfactant described later and the like.
—Compound Represented by the General Formula (1)—
The compound represented by the general formula (1) is not particularly limited as long as it has an aromatic ring at a portion of the structure and is represented by the following general formula (1), and may be appropriately selected according to the purpose. By having the aromatic ring, high etch resistance can be imparted to the resist pattern thickening material even if the resin does not have a cyclic structure at a portion thereof.
In the general formula (1), “X” is a functional group represented by the following structural formula (1). “Y” represents at least any one of a hydroxyl group, an amino group, an amino group substituted by an alkyl group, an alkoxy group, an alkoxycarbonyl group and an alkyl group, and the number of the substitution is an integer of 0 to 3. “m” represents an integer of 1 or more and “n” represents an integer of 0 or more. m is preferably 1 for preventing generation of a crosslinking reaction and for easily controlling the reaction.
In the structural formula (1), “R1” and “R2” may be the same or different, and each represent a hydrogen atom or a substituent group. “Z” represents at least any one of a hydroxyl group, an amino group, an amino group substituted by an alkyl group, and an alkoxy group, and the number of the substitution is an integer of 0 to 3.
Preferably, in the structural formula (1), R1 and R2 are each a hydrogen atom. When the R1 and R2 are each a hydrogen atom, it often has an advantage in water-solubility.
When the R1 and R2 in the structural formula (1) are the substituent group, the substituent group is not particularly limited and can be appropriately selected according to the purpose. Examples thereof are a ketone (alkylcarbonyl) group, an alkoxycarbonyl group, an alkyl group and the like.
Suitable specific examples of the compound represented by the general formula (1) are a compound having a benzyl alcohol structure, a compound having a benzylamine structure, and the like.
The compound having a benzyl alcohol structure is not particularly limited and can be appropriately selected according to the purpose. Suitable examples are benzyl alcohol and a derivative thereof. Specific examples are benzyl alcohol, 2-hydroxybenzyl alcohol (salicyl alcohol), 2-aminobenzyl alcohol, 4-aminobenzyl alcohol, 2,4-dihydroxybenzyl alcohol, 1,4-benzenedimethanol, 1-phenyl-1,2-ethanedithiol, 4-methoxymethylphenol and the like.
The compound having a benzylamine structure is not particularly limited and can be appropriately selected according to the purpose. Suitable examples are benzylamine and a derivative thereof. Specific examples are benzylamine, 2-methoxybenzylamine, and the like.
These may be used singly, or two or more may be used in combination. Among these, 2-hydroxybenzyl alcohol, 4-aminobenzyl alcohol, and the like are preferred from the point that these have high water solubility, and thus can be dissolved in large amount.
The content of the compound represented by the general formula (1) in the resist pattern thickening material is not particularly limited and can be appropriately selected according to the purpose. For instance, the preferable amount is 0.01 to 50 parts by mass on the total amount of the resist pattern thickening material, and the more preferable amount is 0.1 to 10 parts by mass.
When the content of the compound represented by the general formula (1) is less than 0.01 parts by mass, desired reaction amount may not be obtained. The content exceeding 50 parts by mass is not preferable because it is highly possible that the compound separate out during applying and a defect is caused on the pattern.
—Surfactant—
When there are needs, for example, a need to improve the conformability between a resist pattern thickening material and resist pattern, a need for a larger amount of thickening of the resist pattern to be thickened, a need to improve uniformity of the thickening effect at the interface between a resist pattern thickening material and resist pattern, and a need for anti-forming property, the addition of the surfactant can realize these needs.
The surfactant is not particularly limited and may be appropriately selected according to the purpose. Examples thereof include nonionic surfactants, cationic surfactants, anionic surfactants, amphoteric surfactants and the like. These may be used singly or two or more thereof may be used in combination. Among these, the nonionic surfactants are preferred from the point that they do not contain metallic ions such as sodium ion, potassium ion.
Suitable examples of the nonionic surfactants are ones selected from alkoxylate surfactants, fatty acid ester surfactants, amide surfactants, alcohol surfactants, and ethylenediamine surfactants. Specific examples thereof include polyoxyethylene-polyoxypropylene condensation compounds, polyoxy alkylene alkylether compounds, polyoxy ethylene alkylether compounds, polyoxy ethylene derivative compounds, sorbitan fatty acid ester compounds, glycerine fatty acid ester compounds, primary alcohol ethoxylate compounds, phenol ethoxylate compounds, nonyl phenol ethoxylate compounds, octyl phenol ethoxylate compounds, lauryl alcohol ethoxylate compounds, oleyl alcohol ethoxylate compounds, fatty acid ester, amide, natural alcohol, ethylenediamine, secondary alcohol ethoxylate and the like.
The cationic surfactants are not particularly limited and can be appropriately selected according to the purpose. Examples thereof include alkyl cationic surfactants, amide quaternary cationic surfactants, ester quaternary cationic surfactants, and the like.
The amphoteric surfactants are not particularly limited and can be appropriately selected according to the purpose. Examples thereof include amine oxide surfactants, betaine surfactants, and the like.
The content of the surfactant in the resist pattern thickening material is not particularly limited and can be appropriately selected according to the types, contents, etc., of the resin, compound represented by the general formula (1), phase transfer catalyst, etc. Suitable range of the content of the surfactant is, for example, 0.01 parts by mass or more against 100 parts by mass of the resist pattern thickening material, and preferably 0.05 parts by mass to 2 parts by mass, further preferably 0.08 parts by mass to 0.5 parts by mass.
When the content of the surfactant is 0.01 parts by mass or less, there is an effect on improvement of applying property, however, in most cases, the reaction amount of the resist pattern thickening material hardly differ compared with the case where no surfactant is added.
—Phase Transfer Catalyst—
The phase transfer catalyst is not particularly limited and may be appropriately selected according to the purpose. Examples thereof are organic materials. Among these, suitable examples are basic materials.
When the resist pattern thickening material comprises the phase transfer catalyst, it is advantageous that the resist pattern to be thickened is efficiently and uniformly thickened regardless of a material thereof and the thickening effect shows less dependency on a material of the resist pattern to be thickened. Such effects of the phase transfer catalyst are not impaired, for example, even if the resist pattern, which is the subject to be thickened with use of the resist pattern thickening material, contains an acid generating agent or not.
The phase transfer catalyst is preferably water-soluble, and exhibits a water-solubility of 0.1 g in 100 g of water at a water-temperature of 25° C.
Specific examples of the phase transfer catalyst are crown ethers, azacrown ethers, onium salts, and the like.
The phase transfer catalyst may be used singly or two or more thereof may be used in combination. Among these, the onium salt is preferably from the standpoint of solubility to water.
Examples of the crown ether and azacrown ether are 18-crown-6,15-crown-5,1-aza-18-crown-6,13-diaza-18-crown-6,1,4,7-triazacyclononane, and the like.
The onium salts are not particularly limited and may be appropriately selected according to the purpose, but suitably examples thereof are quaternary ammonium salts, pyridinium salt, thiazolium salts, phosphonium salts, piperazinium salts, ephedrinium salts, quininium salts, and cinchoninium salts, and the like.
Examples of the quaternary ammonium salt are those used as a organic synthesis reagent, namely, tetrabutylammonium hydrogensulfate, tetramethylammonium acetate, tetramethylammonium chloride, and the like.
Examples of the pyridinium salt are hexadecylpyridinium bromide, and the like.
Examples of the thiazolium salt are 3-benxyl-5-(2-hydroxyethyl)-4-methylthiazolium chloride, and the like.
Examples of the phosphonium salt are tetrabutylphosphonium chloride, and the like.
Examples of the piperazinium salt are 1,1-dimethyl-4-phenylpiperazinium iodide, and the like.
Examples of the ephdrinium salt are ((−)-N,N-dimethylephedrinium bromide), and the like.
Examples of the quininium salt are N-benzylquininium chloride, and the like.
Examples of the cinchoninium salt are N-benxylcinchoninium chloride, and the like.
The content of the phase transfer catalyst in the resist pattern thickening material depends on the types and contents etc. of the resin etc., so that it is impossible to define definitely, but it can be suitably selected according to the type and content etc. For example, 10,000 ppm or less is preferable, 10 to 10,000 ppm is more preferable, 10 to 5,000 ppm is further preferable, and 10 to 3,000 ppm is particularly preferable.
When the content of the phase transfer catalyst is 10,000 ppm or less, the advantageous point is that the resist pattern, such as a line-space pattern etc. can be thickened regardless of the size.
The content of the phase transfer catalyst can be measured with use of, for example, liquid chromatography.
—Water-Soluble Aromatic Compound—
The water-soluble aromatic compound is not particularly limited, as long as it is an aromatic compound that has water-solubility, and it can be suitably selected according to the purpose. The compound having water-solubility such that 1 g or more is dissolved into 100 g of water at 25° C. is preferable, and the compound having water-solubility such that 3 g or more is dissolved into 100 g of water at 25° C. is more preferable. Particularly, the most preferable is the compound having water-solubility such that 5 g or more is dissolved into 100 g of water at 25° C.
When the resist pattern thickening material comprises the water-soluble aromatic compound, the preferable point is that the etch resistance of the obtained resist pattern can be remarkably improved because of the cyclic structure contained in the water-soluble aromatic compound.
Examples of the water-soluble aromatic compound are polyphenol compounds, aromatic carboxylic acid compounds, naphthalene polyhydroxy compounds, benzophenone compounds, flavonoid compounds, porphin, water-soluble phenoxy resins, aromatic-containing water-soluble dyes, derivatives thereof, glycosides thereof, and the like. These may be used alone, or two or more may be used in combination.
Examples of the polyphenol compounds include catechin, anthocyanidin (pelargonidin-type (4′-hydroxy), cyanidin-type (3′,4′-dihydroxy), delphinidin-type (3′,4′,5′-trihydroxy)), flavan-3,4-diol, proanthocyanidin, resorcine, resorcine[4]arene, pyrogallol, and gallic acid, and the like.
Examples of the aromatic carboxylic acid compounds include salicylic acid, phthalic acid, dihydroxy benzoic acid, tannin, and the like.
Examples of the benzophenone compounds include alizarin yellow A, and the like.
Examples of the flavonoid compounds include flavone, isoflavone, flavanol, flavonone, flavonol, flavan-3-ol, aurone, chalcone, dihydrochalcone, quercetin, and the like.
These may be used singly, or two or more may be used in combination. Among these, the polyphenol compounds are preferable, catechin, resorcine, and the like are particularly preferable.
Among the water-soluble aromatic compound, from the viewpoint of excellent water-solubility, the compound having two or more polar groups is preferable, the compound having three or more is more preferable, and the compound having four or more is particularly preferable.
The polar group is not particularly limited and can be appropriately selected according to the purpose. Examples thereof are a hydroxyl group, a carboxyl group, a carbonyl group, a sulfonyl group, and the like.
The content of the water-soluble aromatic compound in the resist pattern thickening material can be suitably decided according to the types, contents etc. of the resin, compound represented by the general formula (1), phase transfer catalyst, and surfactant etc.
—Organic Solvent—
The organic solvent is not particularly limited and may be suitably selected according to the purpose. Examples thereof include alcohols, linear esters, cyclic esters, ketones, linear ethers, cyclic ethers, and the like.
When the resist pattern thickening material comprises the organic solvent, the advantage is that the resin, the compound represented by the general formula (1), etc. may be improved in terms of the solubility in the resist pattern thickening material.
The organic solvent can be mixed with water for use. Suitable examples of the water are pure water (deionized water), and the like.
Examples of the alcohols are methanol, ethanol, n-propyl alcohol, isopropyl alcohol, butyl alcohol, and the like.
Examples of the linear esters include ethyl lactate, propylene glycol methyl ether acetate (PGMEA), and the like.
Examples of the cyclic esters include lactones such as γ-butyrolactone, and the like.
Examples of the ketones include acetone, cyclohexanone, and heptanone, and the like.
Examples of the linear ethers include ethyleneglycol dimethylether, and the like.
Examples of the cyclic ethers include tetrahydrofuran, dioxane, and the like.
These organic solvents may be used alone, or two or more may be used in combination. Among these, solvents having a boiling point of about 80 to 200° C. are preferable from the viewpoint of performance to thicken the resist pattern precisely.
The content of the organic solvent in the resist pattern thickening material can be suitably decided according to the type, content etc. of the resin, compound represented by the general formula (1), phase transfer catalyst, and surfactant etc.
—Other Components—
The other components are not particularly limited as long as they do not interfere with the effects of the present invention, and may be suitably selected according to the purpose. Examples are various types of known additives such as thermal acid generating agents, quenchers such as amine type, amide type, and the like.
The content of the other components in the resist pattern thickening material can be decided according to the kind, content etc. of the resin, compound represented by the general formula (1), phase transfer catalyst, and surfactant etc.
—Use and the Like—
The resist pattern thickening material of the present invention can be used by applying over the resist pattern to be thickened.
In the applying, the surfactant may be applied separately before applying the resist pattern thickening material without adding the surfactant into the resist pattern thickening material.
When the resist pattern thickening material is applied over the resist pattern to be thickened and is made to interact or mix with the resist pattern to be thickened, the resist pattern thickening material and the resist pattern undergo interaction to form a mixing layer. As a result, the resist pattern to be thickened is thickened by an amount corresponding to the mixing layer, and a thickened resist pattern is formed.
At this time, the resist pattern thickening material comprises the compound represented by the general formula (1), thus the resist pattern is efficiently and uniformly thickened regardless of a material or size of the resist pattern. With utilization of such resist pattern thickening material, therefore, the thickening effect of the resist pattern is hardly affected by the material or size of the resist pattern.
The resist pattern, which is formed in this way, represents space patterns of which the diameter or width is smaller than the space patterns of resist pattern prior to thickening. As a result, the space pattern formed by the resist pattern exceeds exposure limits or resolution limits of light sources and can represent finer structures, in other words, the size of spaces such as pore and ternch of the resulting space pattern is smaller than the lower limit of space that can be patterned by the wavelength of light used for the light sources. Accordingly, when patterning a resist pattern by means of ArF excimer laser beam, and thickening the resist pattern by means of the resist pattern thickening material, the space pattern of resist formed by the thickened resist pattern can represent such fine and precise conditions as those patterned by electron beam.
Note that, the amount of thickening of the resist pattern to be thickened can be controlled to a desired degree by appropriately adjusting the viscosity of the resist pattern thickening material, the coating thickness of the resist pattern thickening material, the baking temperature, the baking time, and the like.
—Material of Resist Pattern to be Thickened—
The material of the resist pattern to be thickened (the resist pattern on which the resist pattern thickening material of the present invention is applied) is not particularly limited, and can be appropriately selected from among known resist materials according to the purpose. The material of the resist pattern to be thickened may be a negative type or a positive type. Suitable examples include g-line resists, i-line resists, KrF resists, ArF resists, F2 resists, electron beam resists, and the like, which can be patterned by g-line, i-line, KrF excimer laser light, ArF excimer laser light, F2 excimer laser light, electron beam, and the like, respectively. These resists may be chemically amplified types, or non-chemically amplified types. Among these, KrF resists, ArF resists, and resists containing acrylic resins are preferable; in addition, at least one of ArF resists and resists containing acrylic resin is preferable from the view point that they are demanded in terms of improvement in resolution limit for finer patterning and increase of throughput.
The specific examples of the resist pattern material include novolak resists, PHS resists, acrylic resists, cycloolefin-maleic acid anhydrate (COMA) resists, cycloolefin resists, hybrid resists such as alicyclic acrylic-COMA copolymer and the like. These resists may be modified by fluorine.
The process for forming the resist pattern to be thickened, and the size, the thickness and the like of the resist pattern to be thickened are not particularly limited, and can be appropriately selected according to the purpose. In particular, the thickness can be appropriately determined by the surface of the workpiece to be worked and etching conditions and is generally from about 0.1 μm to about 500 μm.
The thickening of the resist pattern to be thickened by using the resist pattern thickening material of the present invention will be described hereinafter with reference to the drawings.
As shown in FIG. 1 , after a resist pattern to be thickened 3 has been formed on a work surface (base material) 5, a resist pattern thickening material 1 is applied over the surface of the resist pattern to be thickened 3. Prebaking (heating and drying) is carried out, such that a coated film is formed. Then, mixing or infiltrating of the resist pattern thickening material 1 into the resist pattern to be thickened 3 occurs at the interface between the resist pattern to be thickened 3 and the resist pattern thickening material 1. As shown in FIG. 2 , a surface layer or mixing layer 10 a is formed as the result of reaction of the mixed or infiltrated portions at the interface of an inner layer resist pattern 10 b (the resist pattern to be thickened 3) and the resist pattern thickening material 1. At this time, the resist pattern thickening material 1 comprises the compound represented by the general formula (1), and thus the inner layer resist pattern 10 b (the resist pattern to be thickened 3) is efficiently and uniformly thickened without being affected by the size of the inner layer resist pattern 10 b (the resist pattern to be thickened 3).
Thereafter, as shown in FIG. 3 , by carrying out developing processing, the portions with no interaction or mixing with the resist pattern 3 or portions with less interaction or mixing with the resist pattern 3, i.e., the portions having high water-solubility, in the resist pattern thickening material 1 applied on the resist pattern 3, are dissolved and removed, and a thickened resist pattern 10 which is uniformly thickened, is developed or formed.
The developing processing may be water developing or may be developing by an alkaline developing solution, but water containing a surfactant and an alkaline developing solution containing a surfactant can be also appropriately used according to necessity, which will be described in more detail later.
The thickened resist pattern 10 has, on the surface of the inner layer resist pattern 10 b (the resist pattern to be thickened 3), the surface layer 10 a which has been formed as a result of mixing or infiltrating of the resist pattern thickening material 1. Since the thickened resist pattern 10 is thicker than the resist pattern to be thickened 3 by an amount corresponding to the thickness of the surface layer 10 a, the size of space pattern formed by the thickened resist pattern, i.e., the distance between adjacent thickened resist patterns 10 or opening diameter of the hole pattern formed by the thickened resist pattern 10, is smaller than that formed by the resist pattern to be thickened 3 prior to thickening. Thus, the space pattern formed by the resist pattern exceeds exposure limits or resolution limits of light sources of the exposure device upon forming the resist pattern to be thickened 3. Accordingly, when patterning a resist pattern by means of ArF excimer laser light, and thickening the resist pattern by means of the resist pattern thickening material, the space pattern of resist formed by the thickened resist pattern can represent such fine conditions as those patterned by electron beam. The space pattern formed by the thickened resist pattern 10 is finer and more precise than the space pattern formed by the resist pattern 3.
The surface layer 10 a of the thickened resist pattern 10 is formed by the resist pattern thickening material 1. The compound represented by the general formula (1) in the resist pattern thickening material 1 has an aromatic ring, and thus even if the resist pattern to be thickened 3 is a material having low etch resistance, the resulting thickened resist pattern 10 has high etch resistance. When the resist pattern thickening material 1 comprises a resin having a cyclic structure at a portion thereof or the like, thereby comprising the cyclic structure in the resist pattern thickening material 1, etch resistance is further improved.
The resist pattern thickening material of the present invention can be suitably used in thickening a resist pattern to be thickened, and making the space pattern fine, exceeding exposure limits. The resist pattern thickening material of the present invention is particularly suitably used in the process for forming a resist pattern of the present invention, the process for manufacturing a semiconductor device of the present invention, and the like.
Further, since the compound represented by the general formula (1) in the resist pattern thickening material of the present invention has an aromatic ring, the resist pattern thickening material of the present invention can be suitably used for coating or thickening a resist pattern formed of resin or the like which is exposed to plasma, etc., and thus is required to make the etch resistance of the surface improved. In addition, when the resist pattern thickening material of the present invention comprises the resin having a cyclic structure at a portion thereof or the like, thereby comprising the cyclic structure in the resist pattern thickening material, the resist pattern thickening material of the present invention can be more suitably used for coating or thickening the resist pattern.
Even in cases such as a case where the resist pattern thickening material is alkalified to pH 10 or more by adding an alkaline substance into the resist pattern thickening material of the present invention and the resist pattern thickening material or a case where the resist pattern thickening material is used against the resist pattern which had been left under uncontrolled atmosphere outside a clean room for one year after exposure, the use of the resist pattern thickening material of the present invention enables a resist pattern to be thickened to the same degree as is thickened without such operation. Furthermore, even in the case where a non-chemically amplified type resist which dose not contain an acid, an acid generating agent, or the like is patterned by electron beam exposure to form a resist pattern to be thickened, the resist pattern thickening material of the present invention can be applied over the resist pattern to be thickened and is capable of thickening the resist pattern in the same way as in the chemically amplified type resist. From these facts, it can be easily understood that the reaction proceeds in a different form from RELACS material which utilizes an acid.
(Process for Forming Resist Pattern)
The process for forming a resist pattern of the present invention comprises forming a resist pattern to be thickened, and then applying the resist pattern thickening material of the present invention so as to cover the surface of the resist pattern to be thickened, preferably comprises irradiating the entire surface of the resist pattern to be thickened with one of ultraviolet light and ionizing radiation before the application, and may further comprise other treatments suitably selected according to necessity.
Suitable examples of materials of the resist pattern to be thickened are the above-mentioned materials in the description of the resist pattern thickening material of the present invention.
The resist pattern to be thickened can be formed in accordance with known methods.
The resist pattern to be thickened can be formed on a surface of a workpiece (base material). The surface of the workpiece (base material) is not particularly limited, and can be appropriately selected according to the purpose. However, when the resist pattern to be thickened is formed into a semiconductor device, the surface of the workpiece (base material) is, for example, a surface of a semiconductor substrate. Specific suitable examples thereof include the surfaces of the substrate such as a silicon wafer, various types of oxide films, or the like.
The method of applying the resist pattern thickening material is not particularly limited, and can be appropriately selected from among known coating methods according to the purpose. Suitable examples are a spin coating method and the like. In the case where a spin coating method is used, the conditions are as follows for example: the rotational speed is about 100 rpm to 10,000 rpm, and is preferably 800 rpm to 5,000 rpm, and the time is about one second to 10 minutes, and is preferably 1 second to 90 seconds.
The coated thickness at the time of coating is usually about 10 to 1,000 nm (100 to 10,000 angstroms) and 100 to 500 nm (1,000 to 5,000 angstroms) is preferable.
Note that, at the time of coating, the surfactant may be applied before and separately from applying the resist pattern thickening material, without being contained in the resist pattern thickening material.
It is also preferable that the entire surface of the resist pattern to be thickened be irradiated with one of ultraviolet light or ionizing radiation before applying the resist pattern thickening material (hereinafter sometimes referring to as “pre-treatment exposure”) in terms of adjusting the surface condition of the resist film on a wafer. In this case, when the resist pattern thickening material is applied after irradiation, the difference in the amount of thickening due to the difference in density of pattern can be reduced, and resist pattern with an intended size can be obtained stably and efficiently. Specifically, in the case where resist patterns with different pitch of the patterns, which have sparse regions of the resist pattern (regions where the pitch of resist pattern is long) and dense regions of the resist pattern (regions where the pitch of resist pattern is short), or resist patterns, in which various sizes are mixed, are thickened, there was a problem that the amounts of thickening differed depending on the density and size. This arises from the fact that the light intensity distribution during exposure differs depending on pattern, and slight degree of difference of surface condition to such a degree that remains unrecognized in the development of the resist pattern (difference of fogging exposure dose) influences the easiness of forming a mixing layer which is formed as a result of interaction between the resist pattern and the resist pattern thickening material. When the entire surface of the resist pattern to be thickened is irradiated with one of ultraviolet light or ionizing radiation before applying the resist pattern thickening material, the conditions of the surface of the resist film can be adjusted, allowing the amount of thickening the resist pattern to be uniform.
The source of ultraviolet light or ionizing radiation for the pre-treatment exposure are not particularly limited and can be appropriately selected according to the sensitive wavelength of the material of the resist pattern. Specific examples of the ultraviolet light and ionizing radiation include broadband ultraviolet light emitted from a high-pressure mercury lamp or low-pressure mercury lamp, as well as g-line (wavelength: 436 nm), i-line (wavelength: 365 nm), KrF excimer laser light (wavelength: 248 nm), ArF excimer laser light (wavelength: 193 nm), F2 excimer laser light (wavelength: 157 nm), EUV light (soft x-ray region having a wavelength of 5 nm to 15 nm), or electron beam, X-ray etc. In terms of the structure of manufacturing equipment, it is preferable to select from these the same ultraviolet light or ionizing radiation as that used during exposure in forming the resist pattern.
The irradiation dose (exposure dose), at which the resist pattern to be thickened is irradiated with the ultraviolet light or ionizing radiation, is not particularly limited, can be appropriately selected according to the type of the ultraviolet light or ionizing radiation to be used, but, for example, is preferably 0.1% to 20% relative to the irradiation dose (exposure dose) required for forming the resist pattern.
When the irradiation dose is less than 0.1%, the surface of the resist film may not be adjusted in a uniform state effectively. When the irradiation dose exceeds 20%, photoreaction in the resist pattern occurs more than required, the upper part of the resist pattern turns to be solubilized in an alkaline developer to give the pattern deformation or partial loss.
As long as the entire surface of the resist pattern to be thickened is irradiated with the ultraviolet light or ionizing radiation at a specific irradiation dose, the method is not particularly limited. Irradiation can be carried out by appropriately adjusting, irradiation time, irradiation dose, etc. as follows. When a strong light is used, irradiation can be carried out for a short time, and when a weak light is used, for a long time. When a resist material with a high exposure sensitivity is used, irradiation can be carried out with less exposure dose (irradiation dose), and when a resist material with a low exposure sensitivity is used, with more exposure dose (irradiation dose).
Further, by carrying out prebaking (heating and drying) of the applied resist pattern thickening material during applying or after applying, the resist pattern thickening material can be efficiently mixed or infiltrated into the resist pattern to be thickened at the interface between the resist pattern to be thickened and the resist pattern thickening material.
The conditions, the method and the like of the prebaking (heating and drying) are not particularly limited as long as they do not cause softening of the resist pattern to be thickened, and can be appropriately selected according to the purpose. For example, the prebaking may be carried out once, or two or more times. When the prebaking is carried out two or more times, the temperature of prebaking at each time may be constant or may be different. When the temperature is constant, the temperature is preferably about 40° C. to 150° C., and 70° C. to 120° C. is more preferable, and the time is preferably about 10 seconds to 5 minutes, and 40 seconds to 100 seconds is more preferable.
Moreover, according to necessity, carrying out baking of the applied resist pattern thickening material after the prebaking (heating and drying) is preferable from the standpoint that the mixing or infiltrating at the interface of the resist pattern to be thickened and the resist pattern thickening material can be made to proceed efficiently.
The conditions, the method and the like of the baking are not particularly limited and can be appropriately selected according to the purpose. However, usually, a higher temperature than that at the prebaking (heating and drying) is used. The conditions of the baking are, for example, that the temperature is about 70° C. to 150° C., and 90° C. to 130° C. is preferable, and the time is about 10 seconds to 5 minutes, and 40 seconds to 100 seconds is preferable.
Moreover, carrying out developing processing of the applied resist pattern thickening material after the baking is preferable. In this case, carrying out developing processing is preferable in that, the portions with no interaction or mixing with the resist pattern, or the portions with less interaction or mixing with the resist pattern, i.e., the portions having high water-solubility, in the applied resist pattern thickening material, are dissolved and removed, and a thickened resist pattern is developed or obtained.
The developing processing is not particularly limited and can be appropriately selected according to the purpose. It may be water developing or may be alkaline developing, and the developing processing is also preferably carried out using water containing a surfactant or an alkaline developing solution containing a surfactant. In this case, uniformity of the thickening effect at the interface between the resist pattern thickening material and resist pattern is improved, allowing the generation of residue or defects to be reduced.
The surfactant is not particularly limited and can be appropriately selected according to the purpose. For example, a non-ionic surfactant is suitable in that it does not contain metallic ions such as sodium salt and potassium salt.
The non-ionic surfactant is not particularly limited and can be appropriately selected according to the purpose. Suitable specific examples include polyoxyethylene-polyoxypropylene condensation compounds, polyoxyalkylene alkyl ether compounds, polyoxyethylene alkyl ether compounds, polyoxyethylene derivative compounds, silicone compounds, sorbitan fatty acid ester compounds, glycerine fatty acid ester compounds, alcohol ethoxylate compounds, phenol ethoxylate compounds, and the like. These may be used singly, or two or more thereof may be used in combination. Even an ionic surfactant can be used if it is a non-metallic salt.
The content of the surfactant in water (fundamental solution for developing) is not particularly limited, can be appropriately selected according to the purpose, but is preferably 0.001% by mass to 1% by mass, more preferably 0.05% by mass to 0.5% by mass. If the content is less than 0.001% by mass, the effect of the surfactant is small, and if it exceeds 1% by mass, space may widen due to excess dissolving power of developing solution, influence on the dimension and reduced amount of space size of resist becomes significant, for example, pattern-edge becomes round, and besides, residue and defect due to the generation of bubble may be generated easily.
The alkaline developing solution is not particularly limited and can be appropriately selected from known ones used in manufacturing a semiconductor device. Suitable examples thereof include an aqueous solution of quaternary ammonium hydroxide solution, an aqueous solution of choline, and the like. These may be used singly, or two or more thereof may be used in combination. Among these, an aqueous solution of tetramethylammonium hydroxide is preferable because it can be used at low cost and is highly versatile.
Further, the surfactant may be added to the alkaline developing solution according to necessity. In this case, the content of the surfactant in the alkaline developing solution is not particularly limited, can be appropriately selected according to the purpose, but, is the same as mentioned above, preferably 0.001% by mass to 1% by mass, more preferably 0.05% by mass to 0.5% by mass.
The process for forming a resist pattern of the present invention will be described hereinafter with reference to the drawings.
As shown in FIG. 4 , a resist material 3 a is applied on the work surface (base material) 5. Then, as shown in FIG. 5A , the resist material 3 a is patterned to form the resist pattern to be thickened 3. Thereafter, as shown in FIG. 5B , it is preferable to irradiate the entire surface of the obtained resist pattern to be thickened 3 with exposure light. Next, as shown in FIG. 6 , the resist pattern thickening material 1 is applied over the surface of the resist pattern to be thickened 3, and prebaking (heating and drying) is carried out to form a coated film. Then, mixing or infiltrating of the resist pattern thickening material 1 into the resist pattern to be thickened 3 takes place at the interface of the resist pattern to be thickened 3 and the resist pattern thickening material 1. As shown in FIG. 7 , portions with mixing or infiltrating at the interface between the resist pattern to be thickened 3 and the resist pattern thickening material 1 further interact or react. Thereafter, as shown in FIG. 8 , by carrying out developing processing, the portions with no reaction or less interaction or mixing with the resist pattern to be thickened 3, i.e., the portions having high water-solubility, in the applied resist pattern thickening material 1, are dissolved and removed, such that the thickened resist pattern 10 composed of the inner layer resist pattern 10 b (the resist pattern to be thickened 3) and surface layer 10 a thereon, is developed or formed.
The developing processing may be water developing or may be developing by an alkaline solution, and is also preferably performed using the water containing a surfactant or the alkaline developing solution containing a surfactant.
The thickened resist pattern 10 is formed as a result of thickening of the resist pattern to be thickened 3 by the resist pattern thickening material 1, and has, on the surface of the inner layer resist pattern 10 b (the resist pattern to be thickened 3), the surface layer 10 a formed as a result of reaction of resist pattern thickening material 1. Upon thickening, since the resist pattern thickening material 1 comprises the compound represented by the general formula (1), the inner layer resist pattern 10 b (the resist pattern to be thickened 3) is uniformly thickened to form the thickened resist pattern 10 without being adversely affected by the type of the material, the size and the like of the resist pattern to be thickened 3. The thickened resist pattern 10 is thicker than the resist pattern to be thickened 3 (the inner layer resist pattern 10 b) by an amount corresponding to the thickness of the surface layer 10 a. Thus, the width of the space pattern formed by the thickened resist pattern 10 is smaller than that of the space pattern formed by the resist pattern to be thickened 3, and the space pattern formed by the thickened resist pattern 10 is fine.
The surface layer 10 a of the resist pattern 10 is formed by the resist pattern thickening material 1 and the compound represented by the general formula (1) in the resist pattern thickening material 1 has an aromatic ring. Therefore, even if the resist pattern to be thickened 3 (the inner layer resist pattern 10 b) is a material having a low etch resistance, the resist pattern 10, which has, on the surface thereof, the surface layer or mixing layer 10 a having high etch resistance, can be formed. In addition, when the resist pattern thickening material 1 comprises a resin having a cyclic structure at a portion thereof or the like, thereby comprising the cyclic structure in the resist pattern thickening material 1, the etch resistance of the surface layer or mixing layer 10 a is further improved.
The resist pattern which is formed by the process for forming a resist pattern of the present invention (hereinafter sometimes referring to as “thickened resist pattern”) has, on the surface of the resist pattern to be thickened, the surface layer which is formed by interacting or mixing of resist pattern thickening material. The resist pattern thickening material comprises the compound represented by the general formula (1) having an aromatic ring, and thus, even if the resist pattern to be thickened is a material which has low etch resistance, the thickened resist pattern, which has, on the surface of the resist pattern to be thickened, the surface layer or mixing layer having high etch resistance, can be efficiently formed. When the resist pattern thickening material comprises the cyclic structure, e.g., comprising a resin having a cyclic structure at a portion thereof or the like, the etch resistance of the surface layer or mixing layer is further improved. Further, the thickened resist pattern formed by the process for forming a resist pattern of the present invention is thicker than the resist pattern to be thickened by an amount corresponding to the thickness of the surface layer or mixing layer. Therefore, the size such as diameter and width of the space pattern formed by thickened resist pattern 10 is smaller than that of a space pattern formed by the resist pattern to be thickened. Therefore, by using the process for forming a resist pattern of the present invention, a fine space pattern of resist can be formed efficiently.
The thickened resist pattern preferably has high etch resistance. It is preferable that the etching rate (nm/min) of the thickened resist pattern is equivalent to or less than that of the resist pattern to be thickened. Specifically, the ratio of the etching rate (nm/min) of the resist pattern to be thickened to the etching rate (nm/min) of the surface layer or mixing layer determined under the same condition, i.e., resist pattern to be thickened/surface layer or mixing layer, determined under the same condition is preferably 1.1 or more, more preferably 1.2 or more, and particularly preferably 1.3 or more.
The etching rate (nm/min) can be determined, for example, by measuring a reduction of a sample film using a conventional etching system after etching for a predetermined time, and calculating a reduction per unit time.
The surface layer or mixing layer can be suitably formed by using the resist pattern thickening material of the present invention. From the standpoint of further improving the etch resistance, the resist pattern thickening material comprises the cyclic structure, e.g., comprising a resin having a cyclic structure at a portion thereof or the like.
Whether or not the surface layer or mixing layer contains the cyclic structure, can be confirmed by, for example, analyzing the IR absorption spectrum of the surface layer or mixing layer.
The process for forming a resist pattern of the present invention is suitable for forming a variety of space pattern of resist, for example, a line-space pattern, hole pattern (e.g., for contact hole), trench (groove) pattern, etc. The thickened resist pattern formed by the process for forming a resist pattern can be used as a mask pattern, reticle pattern and the like, can be applied for manufacturing functional parts such as metal plugs, various wirings, recording heads, LCDs (liquid crystal displays), PDPs (plasma display panels), SAW filters (surface acoustic wave filters); optical parts used in connecting optical wiring; fine parts such as microactuators; semiconductor devices; and the like, and can be suitably employed in the process for manufacturing a semiconductor device of the present invention which will be described hereinafter.
(Process for Manufacturing Semiconductor Device)
The process for manufacturing a semiconductor device of the present invention comprises a resist pattern forming step and a patterning step, and may further comprise any other steps suitably selected according to necessity.
The resist pattern forming step is a step for forming a thickened resist pattern on a surface of a workpiece using the process for forming a resist pattern of the present invention, and is a step for thickening a resist pattern to be thickened by forming a resist pattern to be thickened on a surface of a workpiece, and then by applying the resist pattern thickening material of the present invention so as to cover the surface of the resist pattern to be thickened. The resist pattern forming step forms a thickened resist pattern on the surface of the workpiece.
Details of the resist pattern forming step are the same as those of the process for forming a resist pattern of the present invention.
Examples of the surface of the workpiece are surface layers of various members in semiconductor devices. Suitable examples are substrates such as silicon wafers, surface layers thereof, various types of oxide films, and the like. The resist pattern to be thickened is as described above. The method of coating is as described above. Further, after the coating, it is preferable to carry out the above-described prebaking, baking, and the like.
The patterning step is a step for patterning the surface of the workpiece by carrying out etching by using the thickened resist pattern formed by the resist pattern forming step as a mask or the like (as a mask pattern or the like).
The method of etching is not particularly limited, and can be appropriately selected from among known methods according to the purpose. Dry etching is a suitable example. The etching conditions are not particularly limited, and can be appropriately selected according to the purpose.
Suitable examples of the other steps are a surfactant coating step, a developing processing step, and the like.
The surfactant coating step is a step for applying the surfactant on the surface of the resist pattern to be thickened before the resist pattern forming step.
The surfactant is not particularly limited, and can be appropriately selected according to the purpose. Suitable examples are the surfactants listed above, and polyoxyethylene-polyoxypropylene condensation product compounds, polyoxyalkylene alkylether compounds, polyoxyethylene alkylether compounds, polyoxyethylene derivative compounds, sorbitan fatty acid ester compounds, glycerin fatty acid ester compounds, primary alcohol ethoxylate compounds, phenol ethoxylate compounds, and nonylphenol ethoxylate, octylphenol ethoxylate, lauryl alcohol ethoxylate, oleyl alcohol ethoxylate, fatty acid ester, amide, natural alcohol, ethylene diamine, secondary alcohol ethoxylate, alkyl cationic, amide quaternary cationic, ester quaternary cationic, amine oxide, and betaine surfactants, and the like.
The developing processing step is a step for carrying out development of the applied resist pattern thickening material after the resist pattern forming step and before the patterning step. Note that the developing processing is as described above.
By using the process for manufacturing a semiconductor device of the present invention, it is possible to efficiently manufacture various types of semiconductor devices such as flash memories, DRAMs, FRAMs.
The present invention will be illustrated in further detail with reference to several examples below, which are not intended to limit the scope of the present invention.
Resist pattern thickening materials A through T having the compositions shown in Table 1 were prepared.
Note that, in Table 1, the “thickening material” means a resist pattern thickening material, and “A” through “T” correspond to the resist pattern thickening materials A through T. Of the resist pattern thickening materials A through T, the resist pattern thickening materials A, B, and P correspond to comparative example and the resist pattern thickening materials C to O and Q to T correspond to examples (of the present invention). Note that, in Table 1, the unit of the values in parentheses is parts by mass.
In the “compound represented by the general formula (1)” column of resist pattern thickening materials C to O and Q to T, benzyl alcohol, benzylamine, and a derivative thereof are compounds represented by the following general formula (1).
In the general formula (1), “X” is a functional group represented by the following structural formula (1). “Y” represents at least any one of a hydroxyl group, an amino group, an amino group substituted by an alkyl group, an alkoxy group, an alkoxycarbonyl group and an alkyl group, and the number of the substitution is an integer of 0 to 3. “m” represents an integer of 1 or more and “n” represents an integer of 0 or more.
In the structural formula (1), “R1” and “R2” may be the same or different, and each represent a hydrogen atom or a substituent group. “Z” represents at least any one of a hydroxyl group, an amino group, an amino group substituted by an alkyl group, and an alkoxy group, and the number of the substitution is an integer of 0 to 3.
In the “resin” column, “PVA” is a polyvinyl alcohol resin (“PVA-205” manufactured by Kuraray Co., Ltd.) and “KW-3” is a polyvinyl acetal resin (manufactured by Sekisui Chemical Co., Ltd.). In the “surfactant” column, “PC-6” is a non-ionic surfactant (a polynuclear phenol ethoxylate surfactant manufactured by Asahi Denka Co., Ltd.) and “SO-145” is a non-ionic surfactant (a secondary alcohol ethoxylate surfactant manufactured by Asahi Denka Co., Ltd.).
In the resist pattern thickening materials A to K, M, and Q to S, 96 gram of pure water (deionized water) was used as the solvent component. In the resist pattern thickening materials P and T, a mixed solution of pure water (deionized water) and isopropyl alcohol as the organic solvent (whose mass ratio was pure water (deionized water):isopropyl alcohol=98.6 g: 0.4 g) was used as the solvent component. In the resist pattern thickening materials L, N and O, a mixed solution of pure water (deionized water) and isopropyl alcohol (pure water (deionized water):isopropyl alcohol=95.5 g: 0.5 g) was used as the solvent component.
TABLE 1 | ||||
Compound | ||||
represented by the | ||||
Thickening | Resin | general formula (1) | Solvent | Surfactant |
material | (Parts by mass) | (Parts by mass) | (Parts by mass) | (Parts by mass) |
A | PVA (4) | — | pure water (96) | — |
B | PVA (4) | — | pure water (96) | SO-145 (0.05) |
C | PVA (4) | benzyl alcohol (1) | pure water (96) | — |
D | PVA (4) | 2-hydroxybenzyl | pure water (96) | — |
alcohol (1) | ||||
E | PVA (4) | 2-hydroxybenzyl | pure water (96) | — |
alcohol (2) | ||||
F | PVA (4) | 4-hydroxybenzyl | pure water (96) | — |
alcohol (1) | ||||
G | PVA (4) | 2-hydroxybenzyl | pure water (96) | PC-6 (0.08) |
alcohol (1) | ||||
H | PVA (4) | 2-hydroxybenzyl | pure water (96) | SO-145 (0.05) |
alcohol (1) | ||||
I | PVA (4) | 2-aminobenzyl alcohol | pure water (96) | — |
(1) | ||||
J | PVA (4) | 4-aminobenzyl alcohol | pure water (96) | — |
(1) | ||||
K | PVA (4) | 2,4-dihydroxybenzyl | pure water (96) | PC-6 (0.25) |
alcohol (1) | ||||
L | PVA (4) | 2- | pure water (95.5) + | — |
methoxybenzylamine | IPA (0.5) | |||
M | KW-3 (16) | 2-hydroxybenzyl | pure water (96) | — |
alcohol (1) | ||||
N | KW-3 (16) | 2-hydroxybenzyl | pure water (95.5) + | PC-6 (0.08) |
alcohol (1) | IPA (0.5) | |||
O | KW-3 (16) | 2-hydroxybenzyl | pure water (95.5) + | SO-145 (0.25) |
alcohol (1) | IPA (0.5) | |||
P | KW-3 (16) | —*1 | pure water (98.6) + | PC-6 (0.25) |
IPA (0.4) | ||||
Q | PVA (4) | 1,4- | pure water (96) | — |
benzenedimethanol (1) | ||||
R | PVA (4) | 1-phenyl-1,2- | pure water (96) | — |
ethanedithiol (1) | ||||
S | PVA (4) | 4-methoxymethylphenol | pure water (96) | — |
(1) | ||||
T | KW-3 (16) | 2-hydroxybenzyl | pure water (98.6) + | PC-6 (0.25) |
alcohol (1.35) | IPA (0.4) | |||
In Table 1, “*1” in the “compound represented by the general formula (1)” column of the resist pattern thickening material P represents that 1.35 parts by mass of tetra(methoxymethyl)glycoluril as the crosslinking agent was added instead of the compound represented by the general formula (1).
—Forming of Resist Pattern—
The resist pattern thickening materials A through T of the present invention which were prepared as described above were applied over hole patterns (each having the opening diameter shown in “initial space size of resist” in Table 2) formed by ArF resists (“AR1244J”, manufactured by JSR Corporation), by a spin coating method, first under the condition of 1,000 rpm/5 s, and then under the condition of 3,500 rpm/40 s. Thereafter, baking was carried out under the condition of 110° C./60 s. Then, the resist pattern thickening materials A through T each were rinsed for 60 seconds with pure water and unreacted portions with no interaction or mixing were removed to develop the resist pattern thickened by the resist pattern thickening materials A through T, respectively. Thus, thickened resist patterns were formed.
The sizes (diameters) of the hole patterns formed by the resulting thickened resist patterns are shown in Table 2 together with the initial pattern sizes (the sizes of the hole patterns formed by the resist patterns to be thickened before thickening, i.e., the “space size (hole diameter) of resist before thickening” in Table 2). Note that, in Table 2, “A” through “T” correspond to the resist pattern thickening materials A through T.
TABLE 2 | ||
Space size (hole diameter) | Space size (hole diameter) | |
Thickening | of resist before thickening | of resist after thickening |
material | (nm) | (nm) |
A | 108.5 | 105.2 |
B | 112.3 | 114.1 |
C | 106.8 | 96.6 |
D | 109.7 | 87.7 |
E | 106.6 | 78.4 |
F | 109.5 | 99.3 |
G | 108.2 | 78.8 |
H | 107.0 | 84.0 |
I | 106.2 | 85.4 |
J | 107.0 | 86.2 |
K | 108.5 | 75.3 |
L | 106.9 | 88.9 |
M | 105.5 | 82.5 |
N | 109.1 | 78.9 |
O | 110.3 | 80.8 |
P | 107.5 | 74.2 |
Q | 110.5 | 74.6 |
R | 107.1 | 92.0 |
S | 108.2 | 90.1 |
T | 106.0 | 76.0 |
Trench (groove) patterns with various sizes (sizes described in the “space size of resist before thickening” column of Table 3, i.e., 110 nm, 200 nm, 300 nm, and 500 nm) were formed with use of ArF resist (“AR1244J”, manufactured by JSR Corporation), the resist pattern thickening materials T and P prepared as described above were applied over the trench (groove) patterns, respectively, by a spin coating method, first under the condition of 1,000 rpm/5 s, and then under the condition of 3,500 rpm/40 s, and baking was carried out under the condition of 110° C./60 s. Thereafter, the resist pattern thickening materials T and P were each rinsed with pure water for 60 seconds and unreacted portions with no interaction or mixing were removed to develop the resist pattern thickened by the resist pattern thickening materials T and P, respectively. Thus, thickened resist patterns were formed.
The reduced amounts (nm) of the sizes of the trench patterns formed by the resulting thickened resist patterns are shown in Table 3 together with the initial pattern sizes (the sizes of the space patterns formed by the resist patterns to be thickened before thickening, i.e., the “space size of resist before thickening” in Table 3). Note that, in Table 3, “T” and “P” correspond to the resist pattern thickening materials T and P.
TABLE 3 | ||
Reduced amount of space | ||
Space size of | size after thickening (nm) |
resist before | Thickening | Thickening | |
thickening (nm) | material | material P | |
110 | 22.5 | 22.3 | |
200 | 22.7 | 30.5 | |
300 | 23.5 | 45.2 | |
500 | 26.3 | 56.5 | |
Hole patterns with various sizes (sizes described in the “space size of resist before thickening” column of Table 4, i.e., 110 nm, 200 nm, and 300 nm) were formed with use of ArF resist (“AR1244J”, manufactured by JSR Corporation), the resist pattern thickening materials T and P were applied over the hole patterns, respectively, by a spin coating method, first under the condition of 1,000 rpm/5 s, and then under the condition of 3,500 rpm/40 s, and baking was carried out under the condition of 110° C./60 s. Thereafter, the resist pattern thickening materials T and P were each rinsed with pure water for 60 seconds and unreacted portions with no interaction or mixing were removed to develop the resist pattern thickened by the resist pattern thickening materials T and P, respectively. Thus, thickened resist patterns were formed.
The reduced amounts (nm) of the sizes of the space patterns formed by the resulting thickened resist patterns are shown in Table 4 together with the initial pattern sizes (the sizes of the space patterns formed by the resist patterns to be thickened before thickening, i.e., the “space size of resist before thickening” in Table 4). Note that, in Table 4, “T” and “P” correspond to the resist pattern thickening materials T and P.
TABLE 4 | ||
Reduced amount of space | ||
Space size of | size after thickening (nm) |
resist before | Thickening | Thickening | |
thickening (nm) | material | material P | |
110 | 30 | 33.3 |
200 | 30.7 | 45.8 |
300 | 28.5 | 65.2 |
It was found that by using the resist pattern thickening material of the present invention in forming hole patterns, the inner diameter of the hole patterns could be reduced. In contrast, it was found that when the resist pattern thickening materials A and B as a comparative example were used for forming hole patterns, the inner diameters of the hole patterns were hardly varied, and thus could not be reduced (refer to Table 2).
Further, it was found that when the resist pattern thickening material T of the present invention was used in forming line-space patterns, the space widths (the intervals between the line patterns) in the lines and spaces pattern could be reduced and could be made to be uniformly fine; and when the resist pattern thickening material T of the present invention was used in forming hole patterns, the hole patterns could be thickened, and the inner diameters of the hole patterns could be reduced (refer to Tables 3 and 4).
In contrast, when the resist pattern thickening material P as a comparative example, which is a conventional resist pattern thickening material containing an uril crosslinking agent, was used in forming lines and spaces patterns and hole patterns, the reduced amount depended on the sizes of the line-space pattern and the hole pattern. The larger the size of the initial space pattern was, the more the reduced amount of the size of the space pattern after thickening increased, and thus, it was found that the lines and spaces pattern and the hole pattern could not be uniformly thickened (refer to Tables 3 and 4).
Hole patterns having openings or holes with an opening diameter of 580 nm were formed with use of non-chemically amplified type electron beam resist (“Nano 495 PMMA” manufactured by MicroChem Corp.) by electron beam exposure thereof, the resist pattern thickening material E of the present invention was applied over the hole patterns by a spin coating method, first under the condition of 1,000 rpm/5 s, and then under the condition of 3,500 rpm/40 s, and baking was carried out under the condition of 110° C./60 s. Thereafter, the resist pattern thickening material E was rinsed with pure water for 60 seconds and unreacted portions with no interaction or mixing were removed to develop the resist pattern thickened by the resist pattern thickening material E. Thus, thickened resist patterns were formed. The size of the space pattern formed by the resulting thickened resist patterns was 400 nm.
The resist pattern thickening material of the present invention could thicken a non-chemically amplified type electron beam resist as well. Thus, it was found that thickening was not caused by utilizing an acid in the resist pattern to be thickened and the interaction or mixing was not crosslinking reaction caused by acid diffusion.
Hole patterns having openings or holes with an opening diameter of 110 nm were formed with use of the ArF resist (“AR1244J” manufactured by JSR Corporation), the resist pattern thickening materials T and P of the present invention were applied over the hole patterns, respectively, by a spin coating method, first under the condition of 1,000 rpm/5 s, and then under the condition of 3,500 rpm/40 s. and baking was carried out under the condition of the various temperatures (the temperatures described in the “baking temperature” column of Table 5, i.e. 90° C., 110° C., 130° C. and 150° C. for 60 seconds. Thereafter, the resist pattern thickening materials T and P were rinsed with pure water for 60 seconds and unreacted portions with no interaction or mixing were removed to develop the resist patterns thickened by the resist pattern thickening materials T and P. Thus, thickened resist patterns were formed.
The reduced amounts (nm) of the sizes of the space patterns formed by the resulting thickened resist patterns are shown in Table 5 together with the baking temperature. Note that, in Table 5, “T” and “P” correspond to the resist pattern thickening materials T and P.
TABLE 5 | ||
Reduced amount of space | ||
Baking | size after thickening (nm) |
temperature | Thickening | Thickening |
(° C.) | material T | material P |
90 | 21.0 | 18.5 |
110 | 30.0 | 33.3 |
130 | 35.5 | 58.2*2 |
150 | 43.3 | —*3 |
In Table 5, in case of “*2”, residue remained, and in case of “*3”, spaces or holes were closed due to crosslinking reaction.
From the results of Table 5, it was found that since thickening by the resist pattern thickening materials T did not utilize crosslinking reaction, acceptable range of baking temperature was broad and it could be efficiently used in a wide range of temperature. In contrast, when the resist pattern thickening material P as a comparative example, which is a conventional resist pattern thickening material containing an uril crosslinking agent was used in forming hole patterns, it was found that residue remained in the case where baking was carried out at 130° C., and spaces or holes were closed due to crosslinking reaction in the case where baking was carried out at 150° C.
The resist pattern thickening materials C, I, and K of the present invention were applied over the surfaces of resists formed on silicon substrates to form surface layers having a thickness of 0.5 μm. These surface layers, a KrF resist (UV-6, manufactured by Shipley Company, L.L.C) for comparison, and a poly(methyl methacrylate) (PMMA) for comparison were subjected to etching using an etching system (a parallel plate RIE system, manufactured by Fujitsu Limited), at Pμ of 200 W, a pressure of 0.02 Torr and a flow rate of CF4 gas of 100 sccm for three minutes. The reductions in the samples were measured, the etching rates were calculated therefrom, and the etching rates of samples were compared with the etching rate of the KrF resist. The results are shown in Table 6.
TABLE 6 | ||
Ratio of | ||
Etching rate | etching rate | |
Material | (nm/min) | to KrF resist |
UV-6 | 630 | 1.00 |
PMMA | 781 | 1.24 |
C | 624 | 0.99 |
I | 618 | 0.98 |
K | 617 | 0.98 |
From the results of Table 6, it was found that the etch resistances of the resist pattern thickening materials of the present invention were near to that of the KrF resist and were markedly superior as compared with PMMA, since the resist pattern thickening materials of the present invention comprise a compound represented by the general formula (1) having an aromatic ring.
Resist pattern thickening materials 2A through 2D having the composition shown in Table 7 were prepared.
In Table 7, “thickening material” means a resist pattern thickening material, and “2A” through “2D” correspond to the resist pattern thickening materials 2A through 2D. In Table 7, the unit of the values in parentheses is parts by mass.
In the “compound represented by general formula (1)” column of the resist pattern thickening materials 2A through 2D, derivatives of benzyl alcohol are compounds represented by the above-mentioned general formula (1).
In the “resin” column, “PVA” is a polyvinyl alcohol resin (“PVA-205C” manufactured by Kuraray Co., Ltd.). In the “surfactant” column, “TN-80” is a non-ionic surfactant (a primary alcohol ethoxylate surfactant manufactured by Asahi Denka Co., Ltd.), and “PC-6” is a non-ionic surfactant (a polynuclear phenol ethoxylate surfactant manufactured by Asahi Denka Co., Ltd.).
As a solvent component, 96 gram of pure water (deionized water) was used.
TABLE 7 | ||||
Compound | ||||
represented by | ||||
Thickening | Resin | general formula (1) | Solvent | Surfactant |
material | (Parts by mass) | (Parts by mass) | (Parts by mass) | (Parts by mass) |
2A | PVA (4) | 2-hydroxybenzyl | pure water (96) | TN-80 (0.06) |
alcohol (1) | ||||
2B | PVA (4) | 2-hydroxybenzyl | pure water (96) | PC-6 (0.06) |
alcohol (1) | ||||
2C | PVA (4) | 2,4-dihydroxybenzyl | pure water (96) | — |
alcohol (1) | ||||
2D | PVA (4) | 2-hydroxybenzyl | pure water (96) | — |
alcohol (1) | ||||
—Preparation of Developing Solution—
Developing solutions 1 to 13 having the composition shown in Table 8 were prepared.
In Table 8, “TMAH” in the “fundamental solution” column, is a 2.38% by mass tetramethylammonium hydroxide aqueous solution (ZTMA100, manufactured by Zeon Corporation), which is an alkaline developing solution, and “choline” is a 4% by mass choline aqueous solution (CHOLINE, i.e., trimethyl 2-hydroxyethyl ammonium hydroxide, manufactured by Tama Chemicals Co., Ltd.). In the “surfactant” column, “TN-100” is a non-ionic surfactant (a primary alcohol ethoxylate surfactant manufactured by Asahi Denka Co., Ltd.), “KF-642” is a non-ionic surfactant (silicone surfactant, manufactured by Shin-Etsu Chemical Co., Ltd.), “PC-10” is a non-ionic surfactant (a polynuclear phenol ethoxylate surfactant manufactured by Asahi Denka Co., Ltd.), “L-44” is a polyoxyethylene-polyoxypropylene condensate surfactant (manufactured by Asahi Denka Co., Ltd.), “GH-200” is a polyoxyethylene alkylether surfactant (manufactured by Asahi Denka Co., Ltd.), “T-81” is a sorbitan fatty acid ester surfactant (manufactured by Asahi Denka Co., Ltd.), “LA-675” is a polyoxyethylene derivative surfactant (manufactured by Asahi Denka Co., Ltd.), “NK-7” is a glycerin fatty acid ester surfactant (manufactured by Asahi Denka Co., Ltd.), “TN-80” is a non-ionic surfactant (a primary alcohol ethoxylate surfactant manufactured by Asahi Denka Co., Ltd.), and “PC-8” is a non-ionic surfactant (a polynuclear phenol ethoxylate surfactant, manufactured by Asahi Denka Co., Ltd.). Further, “% by mass” represents the content of the surfactant to the fundamental solution.
TABLE 8 | ||
Developing | Fundamental | Surfactant |
solution number | solution | (% by mass) |
1 | Pure water | — |
2 | Pure water | TN-100 (0.01) |
3 | Pure water | KF-642 (0.005) |
4 | Pure water | PC-10 (0.02) |
5 | Pure water | L-44 (0.01) |
6 | Pure water | GH-200 (0.005) |
7 | Pure water | T-81 (0.02) |
8 | Pure water | LA-675 (0.01) |
9 | Pure water | NK-7 (0.004) |
10 | TMAH | — |
11 | TMAH | TN-80 (0.01) |
12 | Choline | — |
13 | Choline | PC-8 (0.01) |
—Formation of Resist Pattern—
The resist pattern thickening materials 2A through 2D of the present invention prepared as described above were applied over the hole patterns (each having the opening diameter shown in “space size of resist before thickening” in Table 9), which was formed by the ArF resist (“AR1244J” manufactured by JSR Corporation), by a spin coating method, first under the condition of 1,000 rpm/5 s, and then under the condition of 3,500 rpm/40 s. Thereafter, baking was carried out under the condition of 110° C./60 s.
Then, the resist pattern thickening materials 2A through 2D each were rinsed for 60 seconds using the developing solutions 1 to 13 prepared as described above, and unreacted portions with no interaction or mixing were removed to develop the resist pattern thickened by the resist pattern thickening materials 2A through 2D, respectively. Thus, thickened resist patterns were formed.
The sizes of the space patterns formed by the resulting thickened resist patterns (the “space size of resist after thickening” in Table 9) are shown in Table 9 together with the initial pattern sizes (the sizes of the space patterns formed by the resist patterns to be thickened before thickening, i.e., the “space size of resist before thickening” in Table 9). Note that, in Table 9, “2A” through “2D” correspond to the resist pattern thickening materials 2A through 2D. Further, in the “space size of resist before thickening” and “space size of resist after thickening” columns, values in parentheses represent 3σ (three times of standard deviation), and smaller value means that variation of space size is small.)
TABLE 9 | |||
Space size of resist | Developing | Space size of resist | |
Thickening | before thickening (nm) | solution | after thickening |
material | (3σ) | number | (nm) (3σ) |
2A | 85.5 (13.2) | 1 | 71.2 (9.3) |
2A | 87.3 (13.0) | 2 | 70.2 (6.5) |
2A | 86.0 (12.5) | 10 | 72.5 (7.9) |
2A | 89.2 (12.7) | 11 | 73.9 (5.3) |
2A | 91.5 (11.2) | 5 | 73.2 (6.5) |
2A | 89.3 (13.0) | 6 | 74.2 (6.1) |
2A | 90.0 (12.5) | 7 | 73.5 (7.0) |
2B | 86.0 (12.5) | 1 | 71.0 (9.5) |
2B | 87.2 (12.5) | 3 | 71.9 (7.2) |
2B | 86.6 (12.6) | 12 | 74.0 (7.0) |
2B | 87.0 (12.4) | 13 | 74.3 (5.2) |
2B | 89.2 (12.7) | 8 | 71.9 (5.9) |
2B | 90.8 (12.0) | 9 | 72.3 (7.2) |
2C | 85.6 (13.4) | 1 | 77.5 (10.8) |
2C | 86.1 (12.2) | 4 | 77.6 (9.0) |
2C | 87.2 (12.4) | 10 | 79.5 (6.6) |
2C | 86.8 (13.0) | 11 | 80.0 (5.2) |
2D | 88.3 (12.0) | 1 | 82.0 (10.8) |
2D | 87.1 (12.3) | 2 | 81.3 (9.2) |
2D | 85.9 (12.8) | 12 | 80.8 (8.6) |
2D | 86.4 (12.3) | 13 | 81.1 (7.2) |
From the results of Table 9, it was found that, compared with the case where only pure water was used as a developing solution, in the cases where pure water containing a surfactant was used and where an alkaline developing solution was used, variation (3σ) of the space size after thickening was small, the resist pattern could be uniformly thickened, and space patterns having a uniform size could be obtained stably.
Resist pattern thickening materials 3A through 3E having the compositions shown in Table 10 were prepared.
Note that, in Table 10, the “thickening material” means a resist pattern thickening material, and “3A” through “3E” correspond to the resist pattern thickening materials 3A through 3E. Note that, in Table 10, the unit of the values in parentheses is parts by mass.
In the “compound represented by the general formula (1)” column of the resist pattern thickening materials 3A through 3E, derivatives of benzyl alcohol are compounds represented by the above-mentioned general formula (1).
In the “resin” column, “PVA” is a polyvinyl alcohol resin (“PVA-205C” manufactured by Kuraray Co., Ltd.) and “KW-3” is a polyvinyl acetal resin (manufactured by Sekisui Chemical Co., Ltd.). In the “surfactant” column, “PC-6” is a non-ionic surfactant (a polynuclear phenol ethoxylate surfactant manufactured by Asahi Denka Co., Ltd.), and “TN-80” is a non-ionic surfactant (a primary alcohol ethoxylate surfactant manufactured by Asahi Denka Co., Ltd.).
In the resist pattern thickening materials 3A through 3D, 95 gram of pure water (deionized water) was used as the solvent component. In the resist pattern thickening material 3E, a mixed solution of pure water (deionized water) and isopropyl alcohol as the organic solvent (whose mass (g) ratio was pure water (deionized water):isopropyl alcohol=98.6 (g): 0.4 (g)) was used as the solvent component.
TABLE 10 | ||||
Resin | Compound represented by | |||
Thickening | (Parts by | general formula (1) (Parts by | Solvent | Surfactant |
material | mass) | mass) | (Parts by mass) | (Parts by mass) |
3A | PVA (4) | 2-hydroxybenzyl alcohol (2) | pure water (95) | — |
3B | PVA (4) | 2-hydroxybenzyl alcohol (2) | pure water (95) | PC-6 (0.05) |
3C | PVA (4) | 4-hydroxybenzyl alcohol (2) | pure water (95) | — |
3D | PVA (4) | 2-aminobenzyl alcohol (2) | pure water (95) | — |
3E | KW-3 (16) | 2-hydroxybenzyl alcohol (1.5) | pure water (98.6) + | TN-80 (0.1) |
IPA (0.4) | ||||
—Experiment of Thickening Resist Pattern—
The resist pattern thickening materials 3A through 3E of the present invention which were prepared as described above were applied over hole patterns (each having the opening diameter shown in “Space size of resist before thickening” in Table 11) formed by the ArF resist (“AR1244J”, manufactured by JSR Corporation), by a spin coating method, first under the condition of 1,000 rpm/5 s, and then under the condition of 3,500 rpm/40 s. Thereafter, baking was carried out under the condition of 110° C./60 s. Then, the resist pattern thickening materials 3A through 3E each were rinsed for 60 seconds with pure water and unreacted portions with no interaction or mixing were removed to develop the resist pattern thickened by the resist pattern thickening materials 3A through 3E, respectively. Thus, thickened resist patterns were formed.
The sizes (diameters) of the hole patterns formed by the resulting thickened resist patterns are shown in Table 11 together with the initial pattern sizes (the sizes of the hole patterns formed by the resist patterns to be thickened before thickening, i.e., the “space size (hole diameter) of resist before thickening” in Table 11). Note that, in Table 11, “3A” through “3E” correspond to the resist pattern thickening materials 3A through 3E.
TABLE 11 | ||
Space size | Space size | |
Thickening | (hole diameter) of resist | (hole diameter) of resist |
material | before thickening (nm) | after thickening (nm) |
3A | 109.3 | 87.4 |
3B | 108.0 | 79.3 |
3C | 109.0 | 99.1 |
3D | 106.5 | 88.0 |
3E | 108.4 | 78.7 |
From the results of Table 11, it was found that the resist pattern thickening materials 3A through 3D of the present invention each thickened a resist pattern, enabling the reduction of the inner diameter of the hole patterns.
—Formation of Resist Pattern—
By using the reticle with different intervals of pattern shown in FIG. 46 , which has sparse regions of resist pattern (regions where the pitch of resist pattern is long) and dense regions of the resist pattern (regions where the pitch of resist pattern is short), the ArF resist (“AR1244J”, manufactured by JSR Corporation) was irradiated with ArF excimer laser light, and then developed to form resist patterns.
Here, the reticle 200 shown in FIG. 46 has a large difference in the density of patterns. The reticle 200 has a pattern (line-space pattern) in which reticle size of a 120 nm space 210 and a 120 nm line 220 repeats 50 times, in a dense pattern portion 200A; and a pattern (trench pattern) in which reticle size of 12,000 nm (12 μm) line 230 and a 120 nm space 240 repeats 50 times, in a sparse pattern portion 200B. The pattern layout is such that these patterns are exposed at the same time by one shot irradiation with exposure light.
Then, by using the obtained resist patterns to be thickened, thickened resist patterns were formed in a similar way as in the experiment of thickening resist pattern. In this case, pre-treatment exposure, in which the entire surface of the resist pattern to be thickened is irradiated with exposure light, was not carried out before applying the resist pattern thickening material over the resist pattern to be thickened.
The amounts of change in the space size of resist formed by the resulting thickened resist patterns (Reduced amount (nm); difference between “space size of resist before thickening” and “space size of resist after thickening”) are shown in Table 12, with respect to the dense pattern portion and sparse pattern portion. Note that, in Table 12, “3A” through “3E” correspond to the resist pattern thickening materials 3A through 3E.
TABLE 12 | ||
Amount of change in the space size of resist in the case | ||
where pre-treatment exposure was not preformed (nm) |
Recuced amout of space | Recuced amout of space | |
Thickening | size of resist in dense | size of resist in sparse |
material | pattern portion (nm) | pattern portion (nm) |
3A | 20.0 | 12.4 |
3B | 27.5 | 17.0 |
3C | 8.6 | 6.6 |
3D | 18.0 | 11.9 |
3E | 28.9 | 16.4 |
From the results of Table 12, it was found that use of any resist pattern thickening material resulted in the decrease of the reduced amount of space size of resist in the 120 nm trench pattern located in the sparse pattern portion compared to the reduced amount of space size of resist in the 120 nm line-space pattern located in the dense pattern portion, and was found that when the pre-treatment exposure was not carried out, 1.3 fold- to 1.8-fold differences in the amount of thickening resist pattern were generated depending on the density of resist pattern.
Further, by using the reticle shown in FIG. 46 , the ArF resist (“AR1244J”, manufactured by JSR Corporation) was irradiated with ArF excimer laser light so that the exposure dose was 42.0 mJ/cm2, and then developed to form resist patterns.
Next, the entire surface of the obtained resist pattern was irradiated with ArF excimer laser light so that the exposure dose was 2.5 mJ/cm2 (corresponds to the “pre-treatment exposure). Immediately after the irradiation, the resist pattern thickening materials 3A through 3E of the present invention shown in Table 10 were applied over the resist pattern to be thickened, by a spin coating method, first under the condition of 1,000 rpm/5 s, and then under the condition of 3,500 rpm/40 s. Thereafter, baking was carried out under the condition of 110° C./60 s. Then, the resist pattern thickening materials 3A through 3E each were rinsed for 60 seconds with pure water and unreacted portions with no interaction or mixing were removed to develop the resist pattern thickened by the resist pattern thickening materials 3A through 3E, respectively. Thus, thickened resist patterns were formed.
The amounts of change in the space size of resist formed by the resulting thickened resist patterns (Reduced amount (nm); difference between “space size of resist before thickening” and “space size of resist after thickening”) are shown in Table 13, with respect to the dense pattern portion and sparse pattern portion. Note that, in Table 13, “3A” through “3E” correspond to the resist pattern thickening materials 3A through 3E.
TABLE 13 | ||
Amount of change in the space size of resist in the case | ||
where pre-treatment exposure was preformed (nm) |
Recuced amout of space | Recuced amout of space | |
Thickening | size of resist in dense | size of resist in sparse |
material | pattern portion (nm) | pattern portion (nm) |
3A | 22.0 | 19.0 |
3B | 29.5 | 26.8 |
3C | 10.9 | 9.6 |
3D | 21.1 | 19.3 |
3E | 30.0 | 26.4 |
From the results of Table 13, it was found that use of any resist pattern thickening material made little difference between the reduced amount of space size of resist in the 120 nm line-space pattern located in the dense pattern portion and the reduced amount of space size of resist in the 120 nm trench pattern located in the sparse pattern portion, and by carrying out the pre-treatment exposure, resist pattern could be uniformly thickened without depending on the density of resist pattern.
Further, in a similar way, by using the reticle shown in FIG. 46 , ArF resist (“AX5910”, manufactured by Sumitomo Chemical Co., Ltd.) as the acrylic resist having an alicyclic functional group at the side chain thereof was irradiated with ArF excimer laser light so that the exposure dose was 39.5 mJ/cm2, and then developed to form resist patterns.
Next, resist pattern thickening materials 3A, 3B and 3D shown in Table 11 were applied over the obtained resist pattern to be thickened, and thickened resist patterns were formed, respectively. Here, the thickened resist patterns were formed in two aspects: one in which the pre-treatment exposure was not carried out before applying the resist pattern thickening material over the resist pattern to be thickened; and the other in which the pre-treatment exposure was carried out (the exposure dose in the pre-treatment exposure was 2.3 mJ/cm2). Results are shown in Tables 14 and 15, respectively.
TABLE 14 | ||
Amount of change in the space size of resist in the case | ||
where pre-treatment exposure was not preformed (nm) |
Recuced amout of space | Recuced amout of space | |
Thickening | size of resist in dense | size of resist in sparse |
material | pattern portion (nm) | pattern portion (nm) |
3A | 15.1 | 9.2 |
3B | 20.8 | 13.6 |
3D | 13.9 | 7.6 |
From the results of Table 14, it was found that use of any resist pattern thickening material resulted in the decrease of the reduced amount of space size of resist in the 120 nm trench pattern located in the sparse pattern portion compared to the reduced amount of space size of resist in the 120 nm line-space pattern located in the dense pattern portion, and was found that when the pre-treatment exposure was not carried out, 1.5 fold- to 1.8 fold-differences in the amount of thickening resist pattern were generated depending on the density of resist pattern.
TABLE 15 | ||
Amount of change in the space size of resist in the case | ||
where pre-treatment exposure was preformed (nm) |
Recuced amout of space | Recuced amout of space | |
Thickening | size of resist in dense | size of resist in sparse |
material | pattern portion (nm) | pattern portion (nm) |
3A | 18.3 | 16.9 |
3B | 23.9 | 21.3 |
3D | 16.6 | 14.4 |
From the results of Table 15, it was found that use of any resist pattern thickening material made little difference between the reduced amount of space size of resist in the 120 nm line-space pattern located in the dense pattern portion and the reduced amount of space size of resist in the 120 nm trench pattern located in the sparse pattern portion, and by carrying out the pre-treatment exposure, resist pattern could be uniformly thickened without depending on the density of resist pattern.
As shown in FIG. 9 , an interlayer dielectric film 12 was formed on a silicon substrate 11, and as shown in FIG. 10 , a titanium film 13 was formed by a sputtering method on the interlayer dielectric film 12. Next, as shown in FIG. 11 , a resist pattern 14 was formed by a known photolithographic technique. By using the resist pattern 14 as a mask, the titanium film 13 was patterned by reactive ion etching to form openings 15 a. Reactive ion etching was continuously carried out to remove the resist pattern 14, at the same time, as shown in FIG. 12 , openings 15 b were formed in the interlayer dielectric film 12 by using the titanium film 13 as a mask.
Next, the titanium film 13 was removed by wet processing, and as shown in FIG. 13 , a TiN film 16 was formed on the interlayer dielectric film 12 by a sputtering method. Subsequently, a Cu film 17 was grown by an electrolytic plating method on the TiN film 16. Next, as shown in FIG. 14 , planarizing was carried out by CMP such that the barrier metal and the Cu film (first metal film) remained only in the groove portions corresponding to the openings 15 b (FIG. 12 ), and wires 17 a of a first layer were formed.
Next, as shown in FIG. 15 , an interlayer dielectric film 18 was formed on the wires 17 a of the first layer. Thereafter, in the same way as in FIGS. 9 through 14 , Cu plugs (second metal films) 19 and TiN films 16 a, which connected the wires 17 a of the first layer to upper layer wires which would be formed later, were formed as shown in FIG. 16 .
By repeating the above-described respective processes, as shown in FIG. 17 , a semiconductor device was manufactured which had a multilayer wiring structure having, on the silicon substrate 11, the wires 17 a of the first layer, wires 20 of a second layer, and wires 21 of a third layer. Note that the barrier metal layers formed beneath the wires of the respective layers are not shown in FIG. 17 .
In present Example 4, the resist pattern 14 is the thickened resist pattern formed in the same way as in the case of Examples 1 to 3, by using the resist pattern thickening material of the present invention.
Example 5 illustrates an embodiment of the semiconductor device and the manufacturing process thereof of the present invention using a resist pattern thickening material of the present invention. In Example 5, resist films 26, 27, 29 and 32 are ones thickened by the same method as in Examples 1 to 3 using the resist pattern thickening material of the present invention.
Initially, a SiO2 film was selectively formed in a device isolation region on a p-type Si substrate 22 and thereby yielded a field oxide film 23 of SiO2 film (FIG. 20 ). Next, a SiO2 film was formed by thermal oxidation to a thickness of 10 to 30 nm (100 to 300 angstroms) as a first gate dielectric film 24 a in the MOS transistor in the memory cell unit (first element region). In another step, a SiO2 film was formed by thermal oxidation to a thickness of 10 to 50 nm (100 to 500 angstroms) as a second gate dielectric film 24 b in the MOS transistor in the peripheral circuit unit (second element region). If the first gate dielectric film 24 a and the second gate dielectric film 24 b should have the same thickness, these oxide films may be simultaneously formed in one step.
Next, the peripheral circuit unit (the right view in FIG. 20 ) was masked by a resist film 26 to control a threshold voltage for the formation of a MOS transistor having n-type depletion type channels in the memory cell unit (the left and central views in FIG. 20 ). As an n-type dopant, phosphorus (P) or arsenic (As) was injected into a region to be a channel region directly below the floating gate electrode by ion implantation at a dose of 1×1011 to 1×1014 cm−2 and thereby yielded a first threshold control layer 25 a. The dose and conduction type of the dopant can be appropriately selected depending on whether the channel is a depletion type or an accumulation type.
Next, the memory cell unit (the left and central views in FIG. 21 ) was masked by a resist film 27 to control a threshold voltage for the formation of a MOS transistor having n-type depletion type channels in the peripheral circuit unit (the right view in FIG. 21 ). As an n-type dopant, phosphorus (P) or arsenic (As) was injected into a region to be a channel region directly below the gate electrode by ion implantation at a dose of 1×1011 to 1×1014 cm−2 and thereby yielded a second threshold control layer 25 b.
A first polysilicon film (first conductive film) 28 having a thickness of 50 to 200 nm (500 to 2,000 angstroms) was formed on the entire surface of the article as a floating gate electrode of the MOS transistor of the memory cell unit (the left and central views in FIG. 22 ) and as a gate electrode of the MOS transistor in the peripheral circuit unit (the right view in FIG. 22 ).
With reference to FIG. 23 , a resist film 29 was then formed, the first polysilicon film 28 was patterned using the resist film 29 as a mask and thereby yielded a floating gate electrode 28 a in the MOS transistor in the memory cell unit (the left and central views in FIG. 23 ). In this procedure, the first polysilicon film 28 was patterned in the X direction to be intended dimensions and was not patterned in the Y direction to thereby leave a region to be a source-drain (S/D) layer covered by the resist film 29.
The resist film 29 was stripped, a SiO2 film having a thickness of about 20 to 50 nm (200 to about 500 angstroms) was formed by thermal oxidation and thereby yielded a capacitor dielectric film 30 a so as to cover the floating gate electrode 28 a (the left and central views in FIG. 24 ). In this procedure, a capacitor dielectric film 30 b made of a SiO2 film was also formed on the first polysilicon film 28 in the peripheral circuit unit (the right view in FIG. 24 ). These capacitor dielectric films 30 a and 30 b are made of a SiO2 film alone but they may comprise a multilayer film having two or three layers of SiO2 film and Si3N4 film.
Next, a second polysilicon film (second conductive film) 31 was formed to a thickness of 50 to 200 nm (500 to 2,000 angstroms) so as to cover the floating gate electrode 28 a and the capacitor dielectric film 30 a (FIG. 24 ). The second polysilicon film 31 serves as a control gate electrode.
With reference to FIG. 25 , the memory cell unit (the left and central views in FIG. 25 ) was masked by a resist film 32, the second polysilicon film 31 and the capacitor dielectric film 30 b in the peripheral circuit unit (the right view in FIG. 25 ) were stripped in turn by etching to thereby expose the first polysilicon film 28 from the surface.
With reference to FIG. 26 , the second polysilicon film 31, the capacitor dielectric film 30 a, and the first polysilicon film 28 a of the memory cell unit (the left and central views in FIG. 26 ), which first polysilicon film 28 a had been patterned only in the X direction, were patterned in the Y direction to target dimensions of a first gate unit 33 a using the resist film 32 as a mask. Thus, a multilayer assemblage of a control gate electrode 31 a, a capacitor dielectric film 30 c, and a floating gate electrode 28 c having a width of about 1 μm in the Y direction was formed. In addition, the first polysilicon film 28 in the peripheral circuit unit (the right view in FIG. 26 ) was patterned to target dimensions of a second gate unit 33 b and thereby yielded a gate electrode 28 b about 1 μm wide.
Phosphorus (P) or arsenic (As) was injected into the element forming region of the Si substrate 22 by ion implantation at a dose of 1×1014 to 1×1016 cm−2 using, as a mask, the multilayer assemblage of the control gate electrode 31 a, the capacitor dielectric film 30 c, and the floating gate electrode 28 c in the memory cell unit (the left and central views in FIG. 27 ) and thereby yielded n-type source and drain (S/D) region layers 35 a and 35 b. In addition, phosphorus (P) or arsenic (As) as an n-type dopant was injected into the element forming region of the Si substrate 22 by ion implantation at a dose of 1×1014 to 1×1016 cm−2 using the gate electrode 28 b in the peripheral circuit unit (the right view in FIG. 27 ) as a mask and thereby yielded S/D region layers 36 a and 36 b.
A phosphate-silicate glass film (PSG film) about 500 nm (5000 angstroms) thick was formed as an interlayer dielectric film 37 so as to cover the first gate unit 33 a in the memory cell unit (the left and central views in FIG. 28 ) and the second gate unit 33 b in the peripheral circuit unit (the right view in FIG. 28 ).
Subsequently, contact holes 38 a, 38 b, 39 a, and 39 b were formed on the interlayer dielectric film 37 on the S/D region layers 35, 35 b, 36 a, and 36 b, respectively. S/ D electrodes 40 a, 40 b, 41 a and 41 b were then formed respectively. In order to form the contact holes 38 a, 38 b, 39 a and 39 b, the hole pattern was formed with the resist material and then thickened the resist pattern with the resist pattern thickening material according to the present invention, thereby forming fine space patterns (hole patterns). Thereafter, the contact holes were manufactured in accordance with a conventional method.
Thus, the FLASH EPROM as a semiconductor device was manufactured (FIG. 28 ).
In the above-manufactured FLASH EPROM, the second gate dielectric film 24 b in the peripheral circuit unit (the right views in FIGS. 20 through 28 ) remains being covered by the first polysilicon film 28 or the gate electrode 28 b after its formation (the right views in FIGS. 20 through 28 ) and thereby keeps its initial thickness. Accordingly, the thickness of the second gate dielectric film 24 b can be easily controlled, and the concentration of a conductive dopant can be easily controlled for the control of the threshold voltage.
In this embodiment, the first gate unit 33 a is formed by initially patterning in the gate width direction (the X direction in FIGS. 18 and 19 ) to a set width and then patterning in the gate length direction (the Y direction in FIGS. 18 and 19 ) to a target width. Alternatively, the first gate unit 33 a may be formed by initially patterning in the gate length direction (the Y direction in FIGS. 18 and 19 ) to a set width and then patterning in the gate width direction (the X direction in FIGS. 18 and 19 ) to a target width.
Another FLASH EPROM was manufactured in the same way as in the above embodiment, except that the steps subsequent to the step of FIG. 28 were changed to those shown in FIGS. 29 , 30 and 31. This manufacture is similar to the above embodiment, except for the followings. Specifically, a tungsten (W) film or a titanium (Ti) film about 200 nm (2,000 angstroms) thick was formed as a refractory metal film (fourth conductive film) 42 on the second polysilicon film 31 in the memory cell unit (the left and central views in FIG. 29 ) and the first polysilicon film 28 in the peripheral circuit unit (the right view in FIG. 29 ) and thereby yielded a polycide film. The steps of FIGS. 30 and 31 subsequent to the step of FIG. 29 were carried out in the same manner as in FIGS. 26 , 27, and 28 and a detail description thereof is omitted. The same components in FIGS. 29 , 30, and 31 as in FIGS. 26 , 27, and 28 have the same reference numerals.
Thus, a FLASH EPROM as a semiconductor device was manufactured (FIG. 31 ).
The above-manufactured FLASH EPROM has the refractory metal films (fourth conductive films) 42 a and 42 b on the control gate electrode 31 a and the gate electrode 28 b and can thereby further reduce its electrical resistance.
In this embodiment, the refractory metal films 42 a and 42 b are used as the fourth conductive films. Alternatively, refractory metal silicide films such as titanium silicide (TiSi) films can be used.
Yet another FLASH EPROM was manufactured by the manufacture procedure as in the above-mentioned embodiment, except for steps shown in FIGS. 32 , 33, and 34. Specifically, a second gate unit 33 c in the peripheral circuit unit (second element region) (the right view in FIG. 32 ) has a multilayer structure comprising a first polysilicon film (first conductive film) 28 b, a SiO2 film (capacitor dielectric film) 30 d, and a second polysilicon film (second conductive film) 31 b arranged in this order as in the first gate unit 33 a in the memory cell unit (the left and central views in FIG. 32 ). The first polysilicon film 28 b and the second polysilicon film 31 b are bridged and thereby form a gate electrode (FIGS. 33 and 34 ).
More specifically, with reference to FIG. 33 , the first polysilicon film 28 b and the second polysilicon film 31 b are bridged by forming an opening 52 a penetrating the first polysilicon film (first conductive film) 28 b, the SiO2 film (capacitor dielectric film) 30 d and the second polysilicon film (second conductive film) 31 b at another portion than the second gate unit 33 c shown in FIG. 32 , for example, on the dielectric film 54, and filling the opening 52 a with a refractory metal film (third conductive film) 53 a such as a W film or a Ti film. Alternatively, with reference to FIG. 34 , the first polysilicon film 28 b and the second polysilicon film 31 b may be bridged by forming an opening 52 b penetrating the first polysilicon film (first conductive film) 28 b and the SiO2 film (capacitor dielectric film) 30 d, thereby exposing the lower first polysilicon film 28 b at the bottom of the opening 52 b, and filling the opening 52 b with a refractory metal film 53 b such as a W film or a Ti film.
In the above-manufactured FLASH EPROM, the second gate unit 33 c in the peripheral circuit unit has the same structure as the first gate unit 33 a in the memory cell unit. Accordingly, the memory cell unit and the peripheral circuit unit can be formed by the same step to thereby efficiently simplify steps of the manufacture process.
In this embodiment, the third conductive film 53 a or 53 b and the refractory metal film (fourth conductive film) 42 were formed independently. Alternatively, these films may be formed simultaneously as a refractory metal film in common.
Example 6 relates to the manufacture of a magnetic head as an application embodiment of the resist pattern formed using the resist pattern thickening material of the present invention. In Example 6, after-mentioned resist patterns 102 and 126 are thickened resist patterns formed by the same process as in Example 1 using the resist pattern thickening material of the present invention.
Initially, a resist film was formed to a thickness of 6 μm on an interlayer dielectric layer 100, was exposed to light, was developed and thereby yielded a resist pattern 102 having an opening pattern for the formation of a spiral thin film magnetic coil (FIG. 35 ).
Next, a plated underlayer 106 comprising a multilayer structure comprising a Ti contact film 0.01 μm thick and a Cu contact film 0.05 μm thick was formed by vapor deposition on the resist pattern 102 and on the exposed surface of the interlayer dielectric layer 100 at the bottom of the opening 104 in a portion where the resist pattern 102 was not formed (FIG. 36 ).
A Cu-plated film 3 μm thick as a thin-film conductor 108 was formed on the surface of the plated underlayer 106 above the exposed surface of the interlayer dielectric layer 100 at the bottom of the opening 104 in a portion where the resist pattern 102 was not formed (FIG. 37 ).
The resist pattern 102 was dissolved, was removed by lift-off from the interlayer dielectric layer 100 and thereby yielded a spiral thin-film magnetic coil 110 derived from the spiral pattern of the thin-film conductor 108 (FIG. 38 ).
Thus, the magnetic head was manufactured.
The above-manufactured magnetic head has the thin film magnetic coil 110 with fine and precise dimensions, since the fine spiral pattern was formed by using the resist pattern 102 thickened using the resist pattern thickening material of the present invention. In addition, the magnetic head can be satisfactorily manufactured in mass production.
Another magnetic head was manufactured by steps shown in FIGS. 39 through 44 .
A gap layer 114 was formed by sputtering so as to cover a ceramic non-magnetic substrate 112 (FIG. 39 ). The non-magnetic substrate 112 had an insulating layer of silicon oxide, a conductive underlayer of a Ni—Fe Permalloy formed by sputtering, and a lower magnetic layer of a Ni—Fe permalloy formed in advance on its surface. These layers are not shown in the figures. A resin dielectric film 116 was formed from a thermosetting resin in a set region on the gap layer 114 except a region to be a magnetic tip (magnetic head) of the lower magnetic layer (not shown). A resist composition was then applied to the resin dielectric film 116 and thereby yielded a resist film 118.
The resist film 118 was exposed to light, was developed and thereby yielded a spiral pattern (FIG. 40 ). The spirally patterned resist film 118 was subjected to thermal curing at several hundred Celsius degrees for about one hour and thereby yielded a protruded first spiral pattern 120 (FIG. 41 ). A conductive workpiece surface 122 of Cu was formed so as to cover the surface of the first spiral pattern 120.
A resist material was applied to the conductive workpiece surface 122 by spin coating and thereby yielded a resist film 124 thereon. Subsequently, the resist film 124 was patterned corresponding to the first spiral pattern 120 and thereby yielded a resist pattern 126 (FIG. 42 ).
A Cu conductive layer 128 was formed by plating on the exposed surface of the conductive workpiece surface 122 in a portion where the resist pattern 126 was not formed (FIG. 43 ). The resist pattern 126 was lifted off from the conductive workpiece surface 122 by dissolving and thereby yielded a spiral thin-film magnetic coil 130 derived from the Cu conductive layer 128 (FIG. 44 ).
Thus, the magnetic head as shown in a plan view of FIG. 45 was manufactured. The magnetic head has a magnetic layer 132 on the resin dielectric film 116 with the thin-film magnetic coil 130 on its surface.
The above-manufactured magnetic head has the thin-film magnetic coil 130 with fine and precise dimensions, since the fine spiral pattern was formed by using the resist pattern 126 thickened by the resist pattern thickening material of the present invention. In addition, the magnetic head can be satisfactorily manufactured in mass production.
The present invention can solve the conventional problems and achieve the above-mentioned objects.
The present invention can provide a resist pattern thickening material, which can utilize ArF excimer laser light as exposure light during patterning; which, when applied over a resist pattern to be thickened, can efficiently thicken the resist pattern to be thickened, e.g., in form of line-space pattern, regardless of the size of the resist pattern to be thickened; which has high etch resistance; and which is suited for forming a fine space pattern of resist, exceeding exposure limits or resolution limits of light sources of available exposure devices at low cost, easily and efficiently.
The present invention can also provide a process for forming a resist pattern which, during patterning a resist pattern to be thickened, can utilize ArF excimer laser light as a light source; which can thicken a resist pattern to be thickened, e.g., in form of line-space pattern, regardless of the size of the resist pattern; and which is suited for forming a fine space pattern of resist, exceeding exposure limits or resolution limits of light sources of available exposure devices at low cost, easily and efficiently.
In addition, the present invention can provide a process for manufacturing a semiconductor device in which, during patterning a resist pattern to be thickened, ArF excimer laser light can be utilized as a light source; a fine space pattern of resist, exceeding exposure limits or resolution limits of light sources of available exposure devices, can be formed; and high-performance semiconductor devices having fine wiring patterns formed by using the space pattern of resist can be efficiently mass produced, and is to provide a high-performance semiconductor which is manufactured by the process for manufacturing a semiconductor device and has fine wiring patterns.
The resist pattern thickening material of the present invention is suitably utilized for thickening a resist pattern formed of ArF resist or the like and for forming patterns, i.e., space pattern of resist, or wiring pattern finely, exceeding the exposure limits or resolutions of light sources of available exposure devices, while using light as a radiation source during patterning. Thus the resist pattern thickening material of the present invention is suitably applicable for a variety of patterning method, semiconductor device manufacturing process, etc. and particularly suitably applicable for a process for forming a resist pattern and process for manufacturing a semiconductor device of the present invention.
The process for forming a resist pattern of the present invention is suitably applicable for manufacturing functional parts such as mask patterns, reticule patterns, magnetic heads, LCDs (liquid crystal displays), PDPs (plasma display panels), SAW filters (surface acoustic wave filters); optical parts used in connecting optical wiring; fine parts such as microactuators; semiconductor devices; and the like, and can be suitably employed in the process for manufacturing a semiconductor device of the present invention.
The process for manufacturing a semiconductor device of the present invention is suitably applicable for a manufacturing procedure of various semiconductor devices, such as flash memory, DRAM, FRAM and the like.
Claims (24)
1. A resist pattern thickening material comprising:
a resin; and
a compound represented by the general formula (1):
where, “X” is a functional group represented by the following structural formula (1), “Y” represents at least any one of a hydroxyl group, an amino group, an amino group substituted by an alkyl group, an alkoxy group, an alkoxycarbonyl group and an alkyl group, and the number of the substitution is an integer of 0 to 3, “m” represents an integer of 1 or more and “n” represents an integer of 0 or more:
where, “R1” and “R2” may be the same or different, and each represent a hydrogen atom or a substituent group, “Z” represents at least any one of a hydroxyl group, an amino group, an amino group substituted by an alkyl group, and an alkoxy group, and the number of the substitution is an integer of 0 to 3
wherein the resist pattern thickening material does not occur a crosslinking reaction.
2. A resist pattern thickening material according to claim 1 , wherein the resist pattern thickening material exhibits at least one of water-solubility and alkali-solubility.
3. A resist pattern thickening material according to claim 1 , wherein the “m” in the general formula (1) is 1.
4. A resist pattern thickening material according to claim 1 , wherein the “R1” and “R2” are each a hydrogen atom.
5. A resist pattern thickening material according to claim 1 , wherein the compound represented by the general formula (1) comprises one of a benzyl alcohol structure and a benzylamine structure.
6. A resist pattern thickening material according to claim 1 , wherein the content of the compound represented by the general formula (1) in the resist pattern thickening material is 0.01 parts by mass to 50 parts by mass on the total amount of the resist pattern thickening material.
7. A resist pattern thickening material according to claim 1 , wherein the resin exhibits at least one of water-solubility and alkali-solubility.
8. A resist pattern thickening material according to claim 1 , wherein the resin is at least one selected from the group consisting of polyvinyl alcohol, polyvinyl acetal, and polyvinyl acetate.
9. A resist pattern thickening material according to claim 1 , further comprising a surfactant.
10. A process for forming a resist pattern comprising:
forming a resist pattern to be thickened; and then
applying a resist pattern thickening material so as to cover the surface of the resist pattern to be thickened without causing a crosslinking reaction,
wherein the resist pattern thickening material comprises:
a resin; and
a compound represented by the general formula (1):
where, “X” is a functional group represented by the following structural formula (1), “Y” represents at least any one of a hydroxyl group, an amino group, an amino group substituted by an alkyl group, an alkoxy group, an alkoxycarbonyl group and an alkyl group, and the number of the substitution is an integer of 0 to 3, “m” represents an integer of 1 or more and “n” represents an integer of 0 or more:
where, “R1” and “R2” may be the same or different, and each represent a hydrogen atom or a substituent group, “Z” represents at least any one of a hydroxyl group, an amino group, an amino group substituted by an alkyl group, and an alkoxy group, and the number of the substitution is an integer of 0 to 3.
11. A process for forming a resist pattern according to claim 10 , further comprising irradiating the entire surface of the resist pattern to be thickened with one of ultraviolet light or ionizing radiation before the application of a resist pattern thickening material.
12. A process for forming a resist pattern according to claim 11 , wherein the ultraviolet light and ionizing radiation are at least one selected from the group consisting of g-line, i-line, KrF excimer laser light, ArF excimer laser light, F2 excimer laser light, EUV light, electron beam, and X-ray.
13. A process for forming a resist pattern according to claim 10 , wherein the resist pattern to be thickened comprises at least one of an ArF resist and a resist containing an acrylic resin.
14. A process for forming a resist pattern according to claim 13 , wherein the ArF resist is at least one selected from the group consisting of acrylic resists having an alicyclic group at a side chain thereof, cycloolefin-maleic acid anhydrate resists and cycloolefin resists.
15. A process for forming a resist pattern according to claim 10 , wherein, after the application of a resist pattern thickening material, developing processing of the resist pattern thickening material is carried out.
16. A process for forming a resist pattern according to claim 15 , wherein the developing processing is carried out using at least one of water, an alkaline developing solution, water containing a surfactant, and an alkaline developing solution containing a surfactant.
17. A process for forming a resist pattern according to claim 16 , wherein the surfactant is at least one selected from the group consisting of a polyoxyethylene-polyoxypropylene condensation compound, a polyoxyalkylene alkyl ether compound, a polyoxyethylene alkyl ether compound, a polyoxyethylene derivative compound, a silicone compound, a sorbitan fatty acid ester compound, a glycerine fatty acid ester compound, an alcohol ethoxylate compound, and a phenol ethoxylate compound.
18. A process for forming a resist pattern according to claim 16 , wherein the content of the surfactant to one of the water and the alkaline developing solution is 0.001% by mass to 1% by mass.
19. A process for manufacturing a semiconductor device, comprising the steps of:
forming a thickened resist pattern on a surface of a workpiece using a process for forming a resist pattern; and
patterning the surface of the workpiece by etching the surface of the workpiece using the thickened resist pattern as a mask,
wherein the process for forming a resist pattern comprises
forming a resist pattern to be thickened; and then
applying a resist pattern thickening material so as to cover the surface of the resist pattern to be thickened without causing a crosslinking reaction,
wherein the resist pattern thickening material comprises:
a resin; and
a compound represented by the general formula (1):
where, “X” is a functional group represented by the following structural formula (1), “Y” represents at least any one of a hydroxyl group, an amino group, an amino group substituted by an alkyl group, an alkoxy group, an alkoxycarbonyl group and an alkyl group, and the number of the substitution is an integer of 0 to 3, “m” represents an integer of 1 or more and “n” represents an integer of 0 or more:
where, “R1” and “R2” may be the same or different, and each represent a hydrogen atom or a substituent group, and “Z” represents at least any one of a hydroxyl group, an amino group, an amino group substituted by an alkyl group, and an alkoxy group, and the number of the substitution is an integer of 0 to 3.
20. A resist pattern thickening material comprising:
a resin; and
a compound selected from the group consisting of 4-hydroxybenxyl alcohol, 2,4-dihydroxybenzyl alcohol, 1,4-benzenedimethanol, 1-phenyl-1,2-ethanedithiol and 4-methoxymethylphenol.
21. A resist pattern thickening material according to claim 20 , wherein the resist pattern thickening material exhibits at least one of water-solubility and alkali-solubility.
22. A resist pattern thickening material according to claim 20 , wherein the resin exhibits at least one of water-solubility and alkali-solubility.
23. A resist pattern thickening material according to claim 20 , wherein the resin is at least one selected from the group consisting of polyvinyl alcohol, polyvinyl acetal, and polyvinyl acetate.
24. A resist pattern thickening material according to claim 20 , further comprising a surfactant.
Priority Applications (1)
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US12/453,590 US7799508B2 (en) | 2005-02-18 | 2009-05-15 | Resist pattern thickening material and process for forming resist pattern, and semiconductor device and process for manufacturing the same |
Applications Claiming Priority (7)
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JP2005042884 | 2005-02-18 | ||
JP2005-042884 | 2005-02-18 | ||
US11/138,819 US20060188805A1 (en) | 2005-02-18 | 2005-05-27 | Resist pattern thickening material and process for forming resist pattern, and semiconductor device and process for manufacturing the same |
JP2005366991A JP4676325B2 (en) | 2005-02-18 | 2005-12-20 | Resist pattern thickening material, resist pattern forming method, semiconductor device and manufacturing method thereof |
JP2005-366991 | 2005-12-20 | ||
US11/335,716 US7585610B2 (en) | 2005-02-18 | 2006-01-20 | Resist pattern thickening material and process for forming resist pattern, and semiconductor device and process for manufacturing the same |
US12/453,590 US7799508B2 (en) | 2005-02-18 | 2009-05-15 | Resist pattern thickening material and process for forming resist pattern, and semiconductor device and process for manufacturing the same |
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US11/335,716 Continuation US7585610B2 (en) | 2005-02-18 | 2006-01-20 | Resist pattern thickening material and process for forming resist pattern, and semiconductor device and process for manufacturing the same |
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US20090226844A1 US20090226844A1 (en) | 2009-09-10 |
US7799508B2 true US7799508B2 (en) | 2010-09-21 |
Family
ID=35874374
Family Applications (2)
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US11/335,716 Expired - Fee Related US7585610B2 (en) | 2005-02-18 | 2006-01-20 | Resist pattern thickening material and process for forming resist pattern, and semiconductor device and process for manufacturing the same |
US12/453,590 Expired - Fee Related US7799508B2 (en) | 2005-02-18 | 2009-05-15 | Resist pattern thickening material and process for forming resist pattern, and semiconductor device and process for manufacturing the same |
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US11/335,716 Expired - Fee Related US7585610B2 (en) | 2005-02-18 | 2006-01-20 | Resist pattern thickening material and process for forming resist pattern, and semiconductor device and process for manufacturing the same |
Country Status (5)
Country | Link |
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US (2) | US7585610B2 (en) |
EP (1) | EP1693709A1 (en) |
JP (1) | JP4676325B2 (en) |
KR (2) | KR100806160B1 (en) |
TW (1) | TWI303449B (en) |
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US8945822B2 (en) * | 2006-09-26 | 2015-02-03 | Fujitsu Limited | Resist pattern thickening material, method for forming resist pattern, semiconductor device and method for manufacturing the same |
US20120156879A1 (en) * | 2010-12-16 | 2012-06-21 | Fujitsu Limited | Resist pattern improving material, method for forming resist pattern, and method for producing semiconductor device |
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Also Published As
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US7585610B2 (en) | 2009-09-08 |
JP2006259692A (en) | 2006-09-28 |
US20060188807A1 (en) | 2006-08-24 |
KR100806160B1 (en) | 2008-02-22 |
EP1693709A1 (en) | 2006-08-23 |
KR20080005475A (en) | 2008-01-14 |
JP4676325B2 (en) | 2011-04-27 |
KR20060093024A (en) | 2006-08-23 |
TWI303449B (en) | 2008-11-21 |
TW200703453A (en) | 2007-01-16 |
KR100865104B1 (en) | 2008-10-24 |
US20090226844A1 (en) | 2009-09-10 |
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