US7791210B2 - Semiconductor package having discrete non-active electrical components incorporated into the package - Google Patents
Semiconductor package having discrete non-active electrical components incorporated into the package Download PDFInfo
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- US7791210B2 US7791210B2 US10/702,996 US70299603A US7791210B2 US 7791210 B2 US7791210 B2 US 7791210B2 US 70299603 A US70299603 A US 70299603A US 7791210 B2 US7791210 B2 US 7791210B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15172—Fan-out arrangement of the internal vias
- H01L2924/15173—Fan-out arrangement of the internal vias in a single layer of the multilayer substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Definitions
- the invention described herein relates generally to semiconductor device packaging.
- the invention relates to semiconductor device packages that are constructed such that discrete non-active electrical components are incorporated directly onto the semiconductor package. Moreover, these discrete non-active electrical components are electrically interfaced between the integrated circuit die and the electrical traces of the electrical signal routing layers of the package.
- Integrated circuit device packages are used in many different implementations. Such packages encapsulate and protect integrated circuits as well as provide a multiplicity of electrical connections for the encapsulated integrated circuit.
- such packages are mounted printed circuit boards (PCB's) where the packages can be electrically interconnected with other electrical components.
- PCB's printed circuit boards
- circuit structures are designed so that an AC (alternating current) coupled interconnection is required between two components operating at different DC (direct current) levels.
- Capacitors are sometimes used to maintain the AC portion of the signal for components operating at different DC levels. Capacitors connected in series between the two components can be used to filter out DC offset between the components.
- such capacitors are mounted on the PCB where they are coupled in series with the interconnect structures to filter the DC offset between chip mounted components and non-chip mounted components, or filter the DC offset in chip-to-chip communication.
- FIG. 1 An integrated circuit device package 101 (shown here as a ball grid array type package) is mounted to a PCB 120 using a plurality of solder balls 102 .
- the package 101 includes an encapsulated integrated circuit device (also referred to herein as an IC die or chip) mounted to a substrate.
- the package 101 is commonly attached to the PCB 120 with solder balls 102 using reflow techniques.
- a first component 130 operating at one DC voltage is electrically connected to another component (incorporated in the package 101 ) operating at another DC voltage.
- Capacitor 110 is mounted on the PCB 120 .
- the capacitor 110 is connected in series between the first component 130 and the package 101 .
- the capacitor 110 operates as an AC filter between the first component 130 and selected components of the package 101 .
- the PCB mounted capacitor 110 is connected with solder pads on the PCB using electrical connectors 104 .
- the capacitor 110 is connected to the first component 130 (which can be mounted elsewhere on the PCB) using electrical connectors 105 .
- a package of the invention incorporates a series mounted capacitor between the signal traces of the package substrate and the integrated circuit die.
- One embodiment of the invention includes a semiconductor integrated circuit (IC) package having a substrate with an integrated circuit mounted thereon.
- the substrate includes at least one signal layer having a plurality of electrical signal traces and a discrete non-active electrical component mounted on the package.
- the discrete non-active electrical component is mounted on the package so that the integrated circuit die is electrically connected with an electrical signal trace of the package through the discrete non-active electrical component.
- the discrete non-active electrical component comprises a capacitive element that operates as an AC coupling capacitor.
- the invention comprises a semiconductor integrated circuit (IC) package having a substrate including at least one electrical ground plane, at least one electrical power plane, at least one electrical signal layer having a plurality of signal traces, and having a plurality solder balls formed on a surface thereof.
- An integrated circuit die is mounted to the substrate such that the die is electrically connected with some of the solder balls using signal traces.
- a discrete non-active electrical component is electrically connected to the integrated circuit die and to a signal trace.
- FIG. 1 is a simplified schematic cross section view of a portion of a conventional integrated circuit package mounted on a PCB board having an AC coupling capacitor.
- FIG. 2 is simplified cross-sectional view of a semiconductor package embodiment.
- FIG. 3 is simplified cross-sectional view of a semiconductor package embodiment having a discrete non-active electrical component formed thereon in accordance with the principles of the invention.
- FIGS. 4( a ), 4 ( b ), and 4 ( c ) are simplified cross-section views of a semiconductor package embodiment constructed in accordance with the principles of the invention.
- FIG. 5 is simplified cross-sectional view a semiconductor package embodiment incorporated an embedded capacitor to achieve AC coupling in accordance with the principles of the invention.
- FIG. 6 is plan view of the semiconductor package depicted in FIG. 5 .
- semiconductor device package embodiments will be disclosed.
- the depicted structures depict package embodiments having discrete non-active electrical components attached to the signal traces of a signal routing layer of the package.
- the discrete non-active electrical components comprise capacitive elements configured in a manner suitable for facilitating AC filtering between two components operating a different DC voltage levels. Such packages save space on the associated PCB's.
- FIG. 2 depicts one embodiment of a semiconductor package 200 useful for illustrating aspects of the invention.
- the depicted package is a simplified cross-section view of an IC package.
- the substrate 201 is shown with an integrated circuit die 204 mounted thereon.
- the depicted substrate 201 comprises a standard multi-layer PBGA (plastic ball grid array) substrate.
- PBGA plastic ball grid array
- such substrates 201 include a core portion 202 that provides dielectric insulation for the metallization layers which form conducting planes 203 , 203 ′, 205 , 205 ′ and also for the conductive pattern of signal traces 206 , 206 ′.
- the core 202 is formed of fiber material suspended in a cured BT (bismaleimide triazine) resin material.
- the core 202 is then processed to form metallization layers 203 , 206 , 203 ′, 205 , 206 ′, and 205 ′.
- the conducting planes 203 , 203 ′, 205 , 205 ′ are commonly formed of copper materials or coated copper materials. Other conductive materials are also used.
- the conducting planes 203 and 203 ′ define ground planes (G).
- conducting planes 205 and 205 ′ define “power” planes (P) that provide a uniform power to the systems of die 204 .
- the depicted substrate 201 includes a pair of signal routing layers.
- the signal routing layers each comprise a patterned metallization layer.
- the patterned metallization layers are configured to form a pattern of signal traces 206 , 206 ′.
- Such patterns of signal traces 206 , 206 ′ are photolithographically patterned to create resultant pattern of signal traces 206 , 206 ′.
- the signal traces 206 , 206 ′ forming the signal routing layers carry electrical signals to and from the die 204 .
- Such signals are non-power; non-ground, electronic signals that include, but are not limited to, input/output (I/O) signals (for example, such as those signals carried to and from the package by solder balls that connect the package to an associated PCB).
- I/O input/output
- Such substrates 201 are commonly very thin, on the order of about 0.50-1.5 mm thick. Additionally, solder balls 210 are attached to a backside surface of the substrate 201 to facilitate the physical and electrical connection of the package 200 to a system board (e.g., a motherboard). The methods of constructing such substrates 201 are very well known to those having ordinary skill in the art.
- the depicted configuration is referred to as a “stripline” routing configuration.
- the signal traces 206 , 206 ′ are formed between the ground planes and power planes. This is advantageous because the ground planes ( 203 , 205 ) and power planes ( 203 ′, 205 ′) provide electromagnetic shielding to the signal traces 206 , 206 ′ sandwiched in between.
- a related structure called a “microstrip” is configured so that the ground and power planes are on one side of the signal traces. Consequently, in such a “microstrip” configuration, the signal traces are only shielded on one side.
- the integrated circuit (IC) die 204 is flipped over and attached to a front side surface of the substrate 201 .
- such attachment is accomplished using solder balls 207 which are reflowed to mechanically bond the die 204 to the substrate 201 .
- the reflowed solder balls 207 establish electrical connections with electrical connections on the substrate (which can also connect to underlying layers using conducting vias that penetrate through the substrate 201 ) or with underlying solder balls 207 .
- the die 204 is encapsulated using an underfill material (not shown) that protects and seals the inner components of the package 200 .
- underfill materials are commercially available and well known in the art.
- aspects of the invention contemplate moving discrete non-active electrical components, which have heretofore been located on the PCB board, directly on to the IC package.
- the discrete non-active electrical components can be moved closer to the die, thereby, in many cases, enhancing the effectiveness of the discrete non-active electrical components.
- by moving discrete non-active electrical components onto the package valuable space can be saved on the PCB.
- the present invention is directed toward a novel approach for incorporating discrete non-active electrical components into an IC package.
- discrete non-active electrical components can include, but are not limited to, capacitors, resistors, inductors, and other similar non-active electrical components
- One particular embodiment incorporates an AC filtering capacitor directly into the IC package, thereby obviating the need for such capacitors on the PCB.
- FIG. 3 is a very simplified depiction of a generalized application of the principles of the present invention.
- a package 300 includes a substrate 301 having a semiconductor integrated circuit 303 mounted on a surface thereof. Additionally, a non-active electrical component (in this case a capacitor 302 ) is mounted to the substrate 301 .
- the capacitor 302 is electrically connected with the die 303 and also connected with signal traces 305 formed on a signal routing layer. In such a configuration, the capacitor 302 operates as an AC filtering device that couples the die 303 to the signal lines 305 .
- the signal line 305 is electrically connected to a backside solder ball 308 by a conductive via 306 .
- I/O signal can be transmitted from an off-chip system to the solder ball 308 and into the die 303 taking advantage of AC filtering provided by the capacitor 302 .
- the inventors also contemplate implementations wherein a signal is routed from the die 303 onto the signal traces 305 where it is filtered by the capacitor 302 and routed back onto the die 303 through other signal traces 305 .
- the inventors further contemplate other implementations wherein signals routed to the die 303 using the signal traces 305 are filtered by the package mounted capacitor 302 but are not I/O signals.
- FIG. 4( a ) is a simplified cross-sectional depiction of a semiconductor integrated circuit package embodiment constructed in accordance with the principles of the invention.
- the depicted package 400 includes a multi-layer package substrate 401 , the principles of the invention can be applied to a single layer package as well as other multi-layer package implementations.
- the depicted configuration is very useful for implementations that benefit from a short conduction path between a capacitor 402 and a semiconductor integrated circuit die 403 and also benefit from a shielded signal layer.
- the capacitor 402 can be relatively close to the die 403 and the signal trace can be substantially shielded by the ground and power planes.
- the substrate includes a “stripline” routing region 411 and a “microstrip” routing region 412 .
- signal traces 421 formed on a signal routing layer are electromagnetically shielded by the presence of overlying and underlying ground and power planes (e.g., 422 , 423 ).
- the signal traces 431 run on the surface (e.g., above the depicted power and ground planes ( 423 , 432 )). In such an embodiment the surface trace 431 between the die 403 and capacitor 402 can be very short.
- a longer signal trace 421 lies between a ground plane 422 and a power plane 423 which provide shielding to the longer signal trace 421 .
- the longer signal trace 421 connects the capacitor 402 with an underlying solder ball 408 .
- solder balls 408 can be used to form I/O interconnections to off-chip components.
- the inventors point out that the vias can be positioned to route the electrical connections to the solder balls in many other configurations.
- the signal traces of more than one layer of the substrate can be used to connect the die solder balls to the capacitors and then to the die. Practitioners having ordinary skill in the art, using the teachings provided herein, may readily envision a wide range of other implementations.
- FIG. 4( b ) is a simplified cross-sectional depiction of another implementation of semiconductor integrated circuit package constructed in accordance with the principles of the invention.
- the embodiment 400 depicted is also a multi-layer package substrate 401 .
- the depicted configuration is very useful for implementations that may require the non-active electrical component (in this case a capacitor 402 ) to be further from the die 403 . This is common, where the signal trace density is high and space is a significant issue close to the die 403 .
- Such an implementation also provides a high degree of electromagnetic shielding for the signal traces.
- the depicted embodiment does not require a “microstrip” portion as depicted by FIG. 4( a ).
- the depicted embodiment includes two layers configured in “stripline” arrangement.
- the signal traces 421 formed on a signal routing layer are electromagnetically shielded due to being sandwiched between a ground plane 422 and a power plane 423 . In such an embodiment the signal traces 421 between the die 403 and capacitor 402 can be very long.
- FIG. 4( b ) schematically depicts some of the conduction paths to the solder balls 408 .
- a first conduction path C 1 passes from the capacitor 402 to signal trace 421 (through an opening in a top ground plane 422 ) which routes the signal outward from the capacitor 402 along signal trace 421 .
- the first conduction path C 1 then passes downward through openings in a top power plane 423 , through openings in another ground plane 422 , and through openings in a layer corresponding to a second set of signal traces 421 , and through openings in another power plane 423 until it reaches a solder ball 408 .
- a second conduction path C 2 (indicated by the dashed lines) passes downward through the substrate 401 until it reaches a designated solder ball 408 .
- the second conduction path C 2 can be routed along a bottom signal trace 421 and then connected with a solder ball 408 .
- the die 403 is connected to the capacitor 402 using a shielded signal trace 421 (path C 3 ) and the capacitor 402 is connected with an underlying solder balls 408 using one of many possible conductive paths (e.g., C 1 , C 2 ) that run along the signal traces 421 .
- solder balls 408 can be used to form I/O interconnections to off-chip components.
- FIG. 4( c ) is a simplified cross-sectional depiction of another implementation of semiconductor integrated circuit package constructed in accordance with the principles of the invention.
- the embodiment 400 depicted is also a multi-layer package substrate 401 .
- the depicted configuration is also useful for implementations that may require the non-active electrical component (in this case a capacitor 402 ) to be further from the die 403 .
- Certain implementations provide a high degree of electromagnetic shielding for the signal traces.
- the depicted embodiment includes two layers configured in “stripline” arrangement.
- the signal traces 421 formed on a signal routing layer are electromagnetically shielded due to being sandwiched between a ground plane 422 and a power plane 423 .
- FIG. 4( c ) schematically depicts another advantageous conduction path to the solder balls 408 .
- One conduction path C 4 (indicated by the dark line C 4 ) passes from the capacitor 402 to a bottom signal trace 421 (through an opening in a top ground plane 422 , an opening in top power plane 423 , through an opening in the top signal layer 421 , and through an opening in the bottom ground plane 422 ).
- This path C 4 is then connected with a trace in the bottom signal layer 421 that routes the signal outward from the capacitor 402 along the bottom signal trace 421 .
- the conduction path C 4 then passes downward through an openings the bottom power plane 423 where it is electrically connected with a solder ball 408 .
- the capacitor 402 can be connected to the die 403 using conductive path C 5 .
- Conduction path C 5 (indicated by the dark line C 5 ) passes from the capacitor 402 to a bottom signal trace 421 (through an opening in a top ground plane 422 , an opening in top power plane 423 , through an opening in the layer that corresponds to the top signal layer 421 , and through an opening in the bottom ground plane 422 ).
- This path C 5 is then connected with a trace in the bottom signal layer 421 that routes the signal inward toward the die 403 along the bottom signal trace 421 .
- the conduction path C 5 then passes upward (through an opening in the bottom ground plane 422 , through an opening in top power plane 423 , through an opening in the layer that corresponds to the top signal plane 421 , through an opening in the top ground plane 422 ) where it is electrically connected to die 403 .
- embodiments of the invention can take advantage of other types of capacitive elements.
- capacitive elements include embedded or buried capacitors and can include other regions of high dielectric value.
- the embodiments of the invention can also include discrete non-active electrical components such as embedded resistors and embedded inductors.
- One such implementation incorporating an embedded capacitor is depicted, in simplified form, in FIG. 5 .
- FIG. 5 depicts a simplified cross-section view of a package embodiment constructed in accordance with the principles of the invention.
- the depicted package embodiment includes a substrate 501 upon which an integrated circuit die 503 is mounted.
- the substrate 501 comprises a standard multi-layer PBGA (plastic ball grid array) substrate.
- PBGA plastic ball grid array
- substrates 501 typically include a core between metallization layers and signal traces of signal routing layer.
- a common core material is BT, although many other materials are known and used by those having ordinary skill in the art.
- Such core materials commonly have a dielectric constant of about 4.
- the depicted package 500 is depicted as having a multi-layer package substrate 501 , the principles of the invention can be applied to a single layer packages as well as other multi-layer packages.
- the depicted configuration implements a capacitive element (here comprising an embedded capacitor 502 ) and a semiconductor integrated circuit die 503 and also benefits from a shielded signal layer.
- the embedded capacitor 502 can be relatively close to the die 503 and the signal trace can be substantially shielded by the ground and power planes.
- the methods and materials of forming such embedded capacitors are known to persons having ordinary skill in the art. Particularly suitable materials for constructing such embedded capacitors have dielectric constants of greater than about 20.
- Barium titanate is known to be a useful material for such embedded capacitors.
- the capacitance of such embedded capacitors is determined not only by the material of the embedded capacitor, but is also dependent on the dielectric constant of the core material encapsulating the embedded capacitor.
- the precise materials are often a function of design tradeoffs.
- other examples of particularly useful materials are discussed in many papers on the subject.
- a paper entitled: “Compliant Dielectric and Magnetic Materials for Buried Components” by A. H. Feingold, et al. See: http://www.electroscience.com/publications/IMAPS2002(2).pdf) discusses several suitable materials.
- the substrate can include a “stripline” routing region and a “microstrip” routing region.
- signal traces 521 formed on a signal routing layer are electromagnetically shielded by ground and power planes (e.g., 522 , 523 ).
- ground and power planes e.g., 522 , 523
- a signal trace 531 runs on the surface and an underlying ground plane 532 lies under the trace 531 .
- the surface trace 531 between the die 503 and embedded capacitor 502 can be very short.
- the signal trace 521 connects the embedded capacitor 502 with an underlying solder ball 508 .
- solder balls 508 can be used to form I/O interconnections to off-chip components.
- the vias can be positioned to route the electrical connections to the solder balls in many other configurations.
- the signal traces of more than one layer of the substrate can be used to connect the die solder balls to the capacitors and then to the die.
- One electrical interconnection path between the die 503 and the I/O solder balls 508 is depicted by the dotted line C 4 .
- the path C 4 connects the die 503 with the embedded capacitor 502 through the signal trace 531 .
- the capacitor 502 is connected to the ball 508 by passing through openings in the substrate and metallization layers until it is electrically connected with the signal trace 521 wherein the signal passes along the trace 521 and then through further openings in the substrate and metallization layers until it is electrically connected with the solder ball 508 .
- FIG. 6 illustrates a portion of the package depicted as a plan view of the section 6 A- 6 A′ as viewed from the point of view of eye 550 .
- This view reveals the signal traces 521 , 531 and the embedded capacitors 502 .
- This view is a simplified representation of one possible implementation constructed in accordance with the principles of the invention. The inventors contemplate that many other configurations may be constructed in accordance with the principles of the invention.
- FIG. 7 is a block diagram that schematically describes some particularly attractive implementations of the invention.
- a IC package 701 constructed in accordance with the principles of the invention as described herein above is incorporated into a electronic device 702 .
- the previously described embodiments can be used with any type of semiconductor packaging.
- the principles of the invention are particularly useful when used with IC packages 701 including, but not limited to, ball grid array (BGA) type packages and chip scale packaging (CSP).
- BGA ball grid array
- CSP chip scale packaging
- the principles of the invention are further useful IC packages 701 having wire bond implementations as well as flip chip type implementations.
- Such chip packages 701 can be applied to numerous applications in electronic devices 702 . Examples of particularly attractive electronic device 702 implementations include computers, PDA's, cellular telephones, and other electronic equipment.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
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Abstract
Description
Claims (16)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/702,996 US7791210B2 (en) | 2003-11-05 | 2003-11-05 | Semiconductor package having discrete non-active electrical components incorporated into the package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/702,996 US7791210B2 (en) | 2003-11-05 | 2003-11-05 | Semiconductor package having discrete non-active electrical components incorporated into the package |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| US20050093173A1 US20050093173A1 (en) | 2005-05-05 |
| US7791210B2 true US7791210B2 (en) | 2010-09-07 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US10/702,996 Expired - Lifetime US7791210B2 (en) | 2003-11-05 | 2003-11-05 | Semiconductor package having discrete non-active electrical components incorporated into the package |
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| US (1) | US7791210B2 (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080273311A1 (en) * | 2007-02-06 | 2008-11-06 | Nicholas Biunno | Enhanced Localized Distributive Capacitance for Circuit Boards |
| US20100127379A1 (en) * | 2008-11-19 | 2010-05-27 | Semikron Elektronik Gmbh & Co. Kg | Power Semiconductor Module with Control Functionality and Integrated Transformer |
| US20140217601A1 (en) * | 2013-02-01 | 2014-08-07 | Mediatek Inc. | Semiconductor device |
| US20150001733A1 (en) * | 2013-06-28 | 2015-01-01 | Omkar G. Karhade | Reliable microstrip routing for electronics components |
| US20160268202A1 (en) * | 2013-02-01 | 2016-09-15 | Mediatek Inc. | Semiconductor device allowing metal layer routing formed directly under metal pad |
| US10141901B2 (en) | 2011-11-11 | 2018-11-27 | Skyworks Solutions, Inc. | Flip-chip amplifier with termination circuit |
| US10396044B2 (en) * | 2015-10-15 | 2019-08-27 | Renesas Electronics Corporation | Semiconductor device |
| US11508666B2 (en) * | 2020-06-29 | 2022-11-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor package |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100541655B1 (en) * | 2004-01-07 | 2006-01-11 | 삼성전자주식회사 | Package Circuit Board and Package Using the Same |
| US20050253616A1 (en) * | 2004-04-30 | 2005-11-17 | Parker Kenneth P | Method and apparatus for testing and diagnosing electrical paths through area array integrated circuits |
| JP4906047B2 (en) * | 2005-11-28 | 2012-03-28 | ルネサスエレクトロニクス株式会社 | Semiconductor device |
| EP1811666A1 (en) * | 2006-01-19 | 2007-07-25 | 3M Innovative Properties Company | Proximity sensor and method for manufacturing the same |
| US7692101B2 (en) * | 2008-01-09 | 2010-04-06 | Xilinx, Inc. | Reduction of jitter in a semiconductor device by controlling printed circuit board and package substrate stackup |
| US20110011634A1 (en) * | 2009-07-14 | 2011-01-20 | Avago Technologies Enterprise IP (Singapore )Pte. Ltd. | Circuit package with integrated direct-current (dc) blocking capacitor |
| GB2563192B (en) * | 2017-03-16 | 2021-02-24 | Rosemount Measurement Ltd | Improvements in or relating to vibrating element apparatus |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020064029A1 (en) * | 2000-11-29 | 2002-05-30 | Nokia Mobile Phones Ltd. | Stacked power amplifier module |
| US6483714B1 (en) * | 1999-02-24 | 2002-11-19 | Kyocera Corporation | Multilayered wiring board |
| US20040012938A1 (en) * | 2001-08-24 | 2004-01-22 | Sylvester Mark F. | Interconnect module with reduced power distribution impedance |
| US6806569B2 (en) * | 2001-09-28 | 2004-10-19 | Intel Corporation | Multi-frequency power delivery system |
| US6907658B2 (en) * | 2001-06-26 | 2005-06-21 | Intel Corporation | Manufacturing methods for an electronic assembly with vertically connected capacitors |
-
2003
- 2003-11-05 US US10/702,996 patent/US7791210B2/en not_active Expired - Lifetime
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6483714B1 (en) * | 1999-02-24 | 2002-11-19 | Kyocera Corporation | Multilayered wiring board |
| US20020064029A1 (en) * | 2000-11-29 | 2002-05-30 | Nokia Mobile Phones Ltd. | Stacked power amplifier module |
| US6907658B2 (en) * | 2001-06-26 | 2005-06-21 | Intel Corporation | Manufacturing methods for an electronic assembly with vertically connected capacitors |
| US20040012938A1 (en) * | 2001-08-24 | 2004-01-22 | Sylvester Mark F. | Interconnect module with reduced power distribution impedance |
| US6806569B2 (en) * | 2001-09-28 | 2004-10-19 | Intel Corporation | Multi-frequency power delivery system |
Non-Patent Citations (1)
| Title |
|---|
| A.H. Feingold et al., "Compliant Dielectric and Magnetic Materials for Buried Components", http://www.electroscience.com/publications/IMAPS2002(2).pdf, 6 pages. |
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