US7606020B2 - Light exposure apparatus - Google Patents
Light exposure apparatus Download PDFInfo
- Publication number
- US7606020B2 US7606020B2 US11/295,598 US29559805A US7606020B2 US 7606020 B2 US7606020 B2 US 7606020B2 US 29559805 A US29559805 A US 29559805A US 7606020 B2 US7606020 B2 US 7606020B2
- Authority
- US
- United States
- Prior art keywords
- chuck
- substrate
- lift pins
- supporter
- diameter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active, expires
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- H10P72/7612—
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
-
- H10P72/72—
Definitions
- the present invention relates to a light exposure apparatus, and more particularly, to a light exposure apparatus suitable for fabrication of a liquid crystal display (LCD) and capable of preventing static electricity thereon.
- LCD liquid crystal display
- CRTs cathode-ray tubes
- LCD devices LCD devices
- PDPs plasma display panels
- ELDs electro-luminescence displays
- the flat panel display usually includes a light emitting layer or a light polarizing layer on at least one transparent substrate.
- an active matrix type flat panel display which includes a plurality of thin film transistors (TFTs) arranged in a matrix manner.
- TFTs thin film transistors
- the flat panel display has a multi-laminated structure, which is fabricated through the repetition of a thin film-depositing process, a photolithography process and a thin film-etching process.
- the photolithography process transfers patterns of a photo-mask to the deposited thin film on a substrate by depositing a photoresist on the deposited thin film on the substrate, aligning the substrate and exposing the deposited thin film on a light.
- the light-exposing process is performed utilizing a light exposure apparatus.
- FIG. 1 is a schematic plan view of a light-exposing apparatus 100 according to the related art.
- the light exposure apparatus 100 includes a chuck 110 , a light source 160 and a photo-mask 150 .
- a substrate 130 on which a thin film 131 and a photoresist layer 140 are formed, is placed on the chuck 110 .
- the chuck 110 supports the substrate 130 during a light-exposing process.
- the chuck 110 includes plurality of lift pins 120 that are able to move up and down to load and unload the substrate 130 .
- the light source 160 emits a UV (ultra-violet) light toward the substrate 130 .
- UV ultraviolet
- the photo-mask 150 has predetermined patterns selectively transmitting and blocking the emitted light from the light source 160 . Accordingly, the photoresist layer 140 on the chuck 110 is exposed to the UV light that is emitted from the light source 160 and passes through the photo-mask 150 . Then, the photoresist layer 140 is developed to form a photoresist pattern, by which the thin film 131 is patterned.
- FIG. 2 is a schematic plan view of the chuck 110 for the related art light exposure apparatus 100 .
- a recess portion 116 is formed in a center portion of the chuck 110 . Corners of the recess portion 116 are extended along two diagonal lines of the recess portion 116 .
- a plurality of lift pins 120 are symmetrically arranged in the recess portion 116 . Specifically, there are four lift pins 120 arranged at the extended four corners along two diagonal lines. The plurality of lift pins 120 are able to move up and down to load and unload the substrate 130 .
- a plurality of vacuum holes 118 are arranged in an upper surface of the chuck 110 . When the substrate 130 is loaded on the upper surface of the chuck 110 , the vacuum holes 118 are inhaled to be under vacuum so that the substrate 130 can be tightly attached to the upper surface of the chuck 110 .
- FIG. 3A is a schematic cross-sectional view illustrating the related art chuck 110 and the substrate 130 when the lift-pin 120 is in an up position
- FIG. 3B is a schematic cross-sectional view illustrating the related art chuck 110 and the substrate 130 when the lift pin 120 is in a down position.
- a robot places the substrate 130 on the lift pin 120 .
- the lift pin 120 moves down to the down position thereby placing the substrate 130 on the upper surface of the chuck 110 .
- the vacuum hole 118 (of FIG. 2 ) is inhaled to be under vacuum so that the substrate 130 can closely adhere to the upper surface of the chuck 110 .
- the light emitted from the light source 160 (of FIG. 1 ) and passing through the photo-mask ( 150 of FIG. 1 ) irradiates the photoresist layer 140 (of FIG. 1 ) to conduct a light-exposing process.
- the lift pin 120 moves up to the up position so that the robot holds up and transfers the substrate 130 for a following process.
- peripheral portions of the substrate 130 are bent downward. Therefore, when the lift pin 120 moves down to load the substrate 130 on the chuck 110 , the bent peripheral portions of the substrate 130 contact the upper surface of the chuck 110 earlier than the rest portions of the substrate 130 , thereby generating frictions between the peripheral portions of the substrate 130 and the upper surface of the chuck 110 . Due to the frictions, the chuck 110 has positive electrostatic charges at its edge portions. Further, the positive electrostatic charges remain in the edge portions of the chuck 110 .
- the present invention is directed to a light exposure apparatus that substantially obviates one or more of the problems due to limitations and disadvantages of the related art.
- An object of the present invention is to provide a light exposure apparatus that is suitable for fabrication of a liquid crystal display (LCD).
- LCD liquid crystal display
- Another object of the present invention is to provide a light exposure apparatus that is capable of preventing static electricity thereon.
- Another object of the present invention is to provide a light exposure apparatus that is capable of minimizing operation errors thereof.
- the light exposure apparatus suitable of fabrication of a liquid crystal display includes a chuck adapted to receive a substrate on a surface thereof, a plurality of first lift pins in the chuck that are able to move up and down to load and unload the substrate on the surface of the chuck, and a plurality of second lift pins in the chuck to discharge electrostatic charges of the chuck and the substrate.
- an apparatus for fabricating a substrate includes a chuck adapted to receive the substrate on a surface thereof, a plurality of first lift pins in the chuck that are able to move up and down to load and unload the substrate on the surface of the chuck, and a plurality of second lift pins in the chuck to discharge electrostatic charges of the chuck and the substrate.
- a light exposure apparatus for fabricating a substrate of a liquid crystal panel includes a light source adapted to emit ultra-violet light, a photo mask including predetermined patterns that selectively transmit and block the light emitted from the light source, a chuck adapted to support the substrate that is exposed to the light through the photo mask, and a plurality of first lift pins in the chuck that are able to move up and down to load/unload the substrate on/from the chuck, wherein the chuck is provided with a mechanism to reduce a burden of the plurality of first lift pins and to discharge electrostatic charges of the chuck and the substrate.
- FIG. 1 is a schematic plan view of a light-exposing apparatus according to the related art
- FIG. 2 is a schematic plan view of a chuck of the related art light exposure apparatus of FIG. 1 ;
- FIG. 3A is a schematic cross-sectional view illustrating the related art chuck and a substrate when a lift-pin is in an up position
- FIG. 3B is a schematic cross-sectional view illustrating the related art chuck and a substrate when a lift pin is in a down position
- FIG. 4A is a schematic plan view of a chuck for a light exposure apparatus according to an exemplary embodiment of the present invention.
- FIG. 4B is a cross-sectional view of the chuck for the light exposure apparatus of FIG. 4A ;
- FIG. 5A is a cross-sectional view of an eletrostatic discharge (ESD) lift pin for a light exposure apparatus according to an exemplary embodiment of the present invention
- FIG. 5B is a plan view of the ESD lift pin for the light exposure apparatus of FIG. 5A ;
- FIGS. 6A and 6B are cross-sectional views of a chuck and an ESD lift pin, respectively, for a light exposure apparatus according to an exemplary embodiment of the present invention when loading a substrate on the chuck;
- FIGS. 6C and 6D are cross-sectional views of a chuck and an ESD lift pin, respectively, for a light exposure apparatus according to an exemplary embodiment of the present invention when adhering a substrate to the chuck;
- FIGS. 6E and 6F are cross-sectional views of a chuck and an ESD lift pin, respectively, for a light exposure apparatus according to an exemplary embodiment of the present invention when unloading a substrate from the chuck.
- the light exposure apparatus of the present invention is similar to the light exposure apparatus 100 of FIG. 1 except that the light exposure apparatus of the present application is provided with a mechanism that is capable of removing the static electricity and minimizing the operation errors thereof. That is, the light exposure apparatus includes the light source 160 and the photomask 150 that are shown in FIG. 1 .
- FIGS. 4A and 4B are schematic plan and cross-sectional views, respectively, of a chuck 410 for a light exposure apparatus according to an exemplary embodiment of the present invention.
- a recess portion 416 is formed in a center portion of the chuck 410 .
- the recess portion 416 may have a rectangular shape and have four corners extended along two diagonal lines of the recess portion 416 .
- a plurality of lift pins 420 are symmetrically arranged in the recess portion 416 . In this exemplary embodiment, there are four lift pins 420 arranged in the extended four corners along the two diagonal lines of the recess portion 416 .
- the lift pins 420 are able to move up and down, thereby loading/unloading the substrate 430 on/from the chuck 410 .
- the vacuum holes 418 may be connected to an exterior vacuum pump. In such an arrangement, when the substrate 430 is loaded on the upper surface of the chuck 410 , the vacuum holes 418 are inhaled by the exterior vacuum pump until they are under vacuum. Therefore, the substrate 430 can closely adhere to the upper surface of the chuck 410 .
- a plurality of eletrostatic discharge (ESD) lift pins 440 are arranged at edge portions of the upper surface of the chuck 410 .
- ESD eletrostatic discharge
- the ESD lift pins 440 serve to discharge electrostatic charges when the electrostatic charges are generated at the chuck 410 and the substrate 430 .
- the ESD lift pins 440 will be explained in more detail with reference to FIGS. 5A and 5B .
- FIGS. 5A and 5B are cross-sectional and plan views, respectively, of the ESD lift pin 440 for a light exposure apparatus according to an exemplary embodiment of the present invention.
- the ESD lift pin 440 includes a plate 441 , a supporter 443 , an elastic body 442 and a ground line 446 .
- the supporter 443 contacts a lower surface of the plate 441 to support the plate 441 .
- the plate 441 and the supporter 443 may be each shaped like a cylinder. For example, as shown in FIG.
- the plate 441 may have a first diameter “ ⁇ 1 ” of about 30 mm (millimeters), whereas the supporter 443 may have a second diameter “ ⁇ 2 ” of about 20 mm (millimeters). Moreover, referring to FIG. 5A , the plate 441 may have a thickness “H” of about 10 mm (millimeters).
- the elastic body 442 contacts a lower surface of the supporter 443 so that the ESD lift pin 440 is able to move up and down elastically.
- the moving range of the ESD lift pin 440 may be about 10 mm (millimeters) according to an elastic operation of the elastic body 442 .
- the elastic body 442 includes a spring.
- the ground line 446 is arranged in the ESD lift pin 440 , so that positive electrostatic charges remaining at edges of the substrate 430 and the upper surface of chuck 410 can be grounded through the ground line 446 .
- the upper surface of the ESD lift pin 440 is arranged to be in a position higher than the upper surface of the chuck 410 when the lift pin 420 (of FIGS. 4A and 4B ) is in an up position.
- the upper surface of the ESD lift pin 440 is arranged to be in the same position as the upper surface of the chuck 410 when the lift pin is in a down position and the substrate 430 is tightly attached to the upper surface of the chuck 410 .
- Such an arrangement as well as loading and unloading operations of the substrate 430 will be given in detail with reference to FIGS. 6A to 6F .
- FIGS. 6A and 6B are cross-sectional views of the chuck 410 and the ESD lift pin 440 for the light exposure apparatus according to an exemplary embodiment of the present invention when loading the substrate 430 .
- a robot puts the substrate 430 on the lift pin 420 .
- the lift pin 420 moves down until it reaches the down position.
- peripheral portions of the substrate 430 are bent downward.
- the ESD lift pin 440 is protruded to have its upper surface positioned higher than the upper surface of the chuck 410 when the lift pin 420 is in the up position.
- the upper surface of the ESD lift pin 440 is about 10 mm (millimeters) higher than the upper surface of the chuck 410 .
- the bent peripheral portions of the substrate 430 contact the protruded ESD lift pin 440 before contacting the upper surface of the chuck 410 .
- the ESD lift pin 440 takes a part of a weight of the substrate 430 , thereby reducing a burden on the lift pin 420 .
- frictions between the chuck 410 and the substrate 430 are also reduced, and the static electricity is thus reduced. Further, any residual static electricity generated on the substrate 430 and the chuck 410 can be further removed through the ground line 446 in the ESD lift pin 440 , thereby minimizing operational errors of the light exposure apparatus.
- FIGS. 6C and 6D are cross-sectional views of the chuck 410 and the ESD lift pin 440 for the light exposure apparatus according to an exemplary embodiment of the present invention when adhering a substrate to a chuck.
- the vacuum hole 418 (of FIG. 4A ) is inhaled to be in a vacuum condition, thereby closely adhering the substrate 430 to the chuck 410 .
- the ESD lift pin 440 is also in the down position, and the surface of the ESD lift pin 440 is in the same level as the upper surface of the chuck 410 due to the vacuum hole 418 under vacuum and the weight of the substrate 430 . Moreover, the elastic body 442 is compressed elastically. After the substrate 430 is tightly attached to the upper surface of the chuck 410 , a light-exposing process is performed as shown in FIG. 1 . that is, the light emitted from the light source 160 and passing through the photo-mask 150 irradiates the photoresist layer 140 on the thin film 131 .
- FIGS. 6E and 6F are cross-sectional views of the chuck 410 and the ESD lift pin 440 for a light exposure apparatus according to an exemplary embodiment of the present invention when unloading the substrate 430 from the chuck 410 .
- the lift pin 420 moves up to the up position.
- the peripheral portions of the substrate 430 rise due to an elastic decompression of the compressed elastic body 442 of the ESD lift pin 440 .
- the ESD lift pin 440 rises by 10 mm (millimeters) and has a decompressed original position higher than the upper surface of the chuck 410 .
- the ESD lift pins 440 raise the peripheral portions of the substrate 430 , a burden on the lift pin 420 is reduced. Also, since the static electricity generated on the substrate 430 and the chuck 410 is removed through the ground line 446 in the ESD lift pin 440 , a spark discharge at edges, and in particular at corners of the substrate 430 , can be prevented when the substrate 430 is detached from the chuck 410 .
- the robot holds up and transfers the substrate 430 for a following process.
- the light-exposing process is performed by the light exposure apparatus according to an exemplary embodiment of the present invention.
- the light exposure apparatus is described.
- the chuck of the exemplary embodiment of the present invention can be applicable to an apparatus for fabricating a substrate, which has a chuck for treating a thin film on the substrate, such as a CVD (chemical vapor deposition) apparatus, a PECVD (plasma enhanced chemical vapor deposition) apparatus and an etcher.
- CVD chemical vapor deposition
- PECVD plasma enhanced chemical vapor deposition
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
Claims (18)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020040114300A KR101089096B1 (en) | 2004-12-28 | 2004-12-28 | Chuck for Exposure Device |
| KR2004-0114300 | 2004-12-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| US20060139843A1 US20060139843A1 (en) | 2006-06-29 |
| US7606020B2 true US7606020B2 (en) | 2009-10-20 |
Family
ID=36611205
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US11/295,598 Active 2026-10-04 US7606020B2 (en) | 2004-12-28 | 2005-12-07 | Light exposure apparatus |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7606020B2 (en) |
| KR (1) | KR101089096B1 (en) |
| CN (1) | CN100538526C (en) |
| TW (1) | TWI291048B (en) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5795521B2 (en) * | 2011-11-15 | 2015-10-14 | リンテック株式会社 | Support device |
| CN104956475B (en) * | 2013-01-25 | 2017-08-29 | 夏普株式会社 | Semiconductor device |
| CN106711080A (en) * | 2015-11-16 | 2017-05-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Bearing apparatus and semiconductor processing equipment |
| CN108735648B (en) * | 2017-04-18 | 2022-11-08 | 日新离子机器株式会社 | Electrostatic chuck |
| US20190088518A1 (en) * | 2017-09-20 | 2019-03-21 | Applied Materials, Inc. | Substrate support with cooled and conducting pins |
| US10510575B2 (en) | 2017-09-20 | 2019-12-17 | Applied Materials, Inc. | Substrate support with multiple embedded electrodes |
| US10555412B2 (en) | 2018-05-10 | 2020-02-04 | Applied Materials, Inc. | Method of controlling ion energy distribution using a pulse generator with a current-return output stage |
| US11476145B2 (en) | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
| JP7451540B2 (en) | 2019-01-22 | 2024-03-18 | アプライド マテリアルズ インコーポレイテッド | Feedback loop for controlling pulsed voltage waveforms |
| US11508554B2 (en) | 2019-01-24 | 2022-11-22 | Applied Materials, Inc. | High voltage filter assembly |
| US11462388B2 (en) | 2020-07-31 | 2022-10-04 | Applied Materials, Inc. | Plasma processing assembly using pulsed-voltage and radio-frequency power |
| US11798790B2 (en) | 2020-11-16 | 2023-10-24 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| US11901157B2 (en) | 2020-11-16 | 2024-02-13 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| US11495470B1 (en) | 2021-04-16 | 2022-11-08 | Applied Materials, Inc. | Method of enhancing etching selectivity using a pulsed plasma |
| US11791138B2 (en) | 2021-05-12 | 2023-10-17 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11948780B2 (en) | 2021-05-12 | 2024-04-02 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11967483B2 (en) | 2021-06-02 | 2024-04-23 | Applied Materials, Inc. | Plasma excitation with ion energy control |
| US12148595B2 (en) | 2021-06-09 | 2024-11-19 | Applied Materials, Inc. | Plasma uniformity control in pulsed DC plasma chamber |
| US11984306B2 (en) | 2021-06-09 | 2024-05-14 | Applied Materials, Inc. | Plasma chamber and chamber component cleaning methods |
| US20220399186A1 (en) | 2021-06-09 | 2022-12-15 | Applied Materials, Inc. | Method and apparatus to reduce feature charging in plasma processing chamber |
| US11810760B2 (en) | 2021-06-16 | 2023-11-07 | Applied Materials, Inc. | Apparatus and method of ion current compensation |
| US11569066B2 (en) | 2021-06-23 | 2023-01-31 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US11476090B1 (en) | 2021-08-24 | 2022-10-18 | Applied Materials, Inc. | Voltage pulse time-domain multiplexing |
| US12106938B2 (en) | 2021-09-14 | 2024-10-01 | Applied Materials, Inc. | Distortion current mitigation in a radio frequency plasma processing chamber |
| US11694876B2 (en) | 2021-12-08 | 2023-07-04 | Applied Materials, Inc. | Apparatus and method for delivering a plurality of waveform signals during plasma processing |
| US11972924B2 (en) | 2022-06-08 | 2024-04-30 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US12315732B2 (en) | 2022-06-10 | 2025-05-27 | Applied Materials, Inc. | Method and apparatus for etching a semiconductor substrate in a plasma etch chamber |
| US12272524B2 (en) | 2022-09-19 | 2025-04-08 | Applied Materials, Inc. | Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics |
| US12111341B2 (en) | 2022-10-05 | 2024-10-08 | Applied Materials, Inc. | In-situ electric field detection method and apparatus |
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|---|---|---|---|---|
| US5583737A (en) * | 1992-12-02 | 1996-12-10 | Applied Materials, Inc. | Electrostatic chuck usable in high density plasma |
| JPH09148419A (en) | 1995-11-24 | 1997-06-06 | Nec Corp | Electrostatic chuck |
| JP2000236014A (en) | 1999-02-15 | 2000-08-29 | Rohm Co Ltd | Processing of semiconductor wafer |
| US6129546A (en) * | 1998-06-25 | 2000-10-10 | Tokyo Electron Limited | Heat process apparatus and heat process method |
| US6306455B1 (en) * | 1997-08-27 | 2001-10-23 | Tokyo Electron Limited | Substrate processing method |
| US20030128308A1 (en) * | 2001-12-31 | 2003-07-10 | Kim Yong Hun | Chuck for exposure apparatus |
| JP2003347395A (en) | 2002-05-28 | 2003-12-05 | Tokyo Electron Ltd | Processing apparatus and method of detaching electrostatic chuck |
| US20040196616A1 (en) | 2003-04-01 | 2004-10-07 | Bon-Woong Koo | Wafer platen equipped with electrostatic clamp, wafer backside gas cooling, and high voltage operation capability for plasma doping |
| US6887317B2 (en) * | 2002-09-10 | 2005-05-03 | Applied Materials, Inc. | Reduced friction lift pin |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000243816A (en) * | 1999-02-22 | 2000-09-08 | Hitachi Electronics Eng Co Ltd | Substrate chuck device |
-
2004
- 2004-12-28 KR KR1020040114300A patent/KR101089096B1/en not_active Expired - Fee Related
-
2005
- 2005-11-30 TW TW094142090A patent/TWI291048B/en not_active IP Right Cessation
- 2005-11-30 CN CNB2005101261512A patent/CN100538526C/en not_active Expired - Fee Related
- 2005-12-07 US US11/295,598 patent/US7606020B2/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5583737A (en) * | 1992-12-02 | 1996-12-10 | Applied Materials, Inc. | Electrostatic chuck usable in high density plasma |
| JPH09148419A (en) | 1995-11-24 | 1997-06-06 | Nec Corp | Electrostatic chuck |
| US6306455B1 (en) * | 1997-08-27 | 2001-10-23 | Tokyo Electron Limited | Substrate processing method |
| US6129546A (en) * | 1998-06-25 | 2000-10-10 | Tokyo Electron Limited | Heat process apparatus and heat process method |
| JP2000236014A (en) | 1999-02-15 | 2000-08-29 | Rohm Co Ltd | Processing of semiconductor wafer |
| US20030128308A1 (en) * | 2001-12-31 | 2003-07-10 | Kim Yong Hun | Chuck for exposure apparatus |
| JP2003347395A (en) | 2002-05-28 | 2003-12-05 | Tokyo Electron Ltd | Processing apparatus and method of detaching electrostatic chuck |
| US6887317B2 (en) * | 2002-09-10 | 2005-05-03 | Applied Materials, Inc. | Reduced friction lift pin |
| US20040196616A1 (en) | 2003-04-01 | 2004-10-07 | Bon-Woong Koo | Wafer platen equipped with electrostatic clamp, wafer backside gas cooling, and high voltage operation capability for plasma doping |
| US7126808B2 (en) * | 2003-04-01 | 2006-10-24 | Varian Semiconductor Equipment Associates, Inc. | Wafer platen equipped with electrostatic clamp, wafer backside gas cooling, and high voltage operation capability for plasma doping |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101089096B1 (en) | 2011-12-06 |
| TWI291048B (en) | 2007-12-11 |
| TW200622366A (en) | 2006-07-01 |
| CN100538526C (en) | 2009-09-09 |
| US20060139843A1 (en) | 2006-06-29 |
| CN1797209A (en) | 2006-07-05 |
| KR20060075500A (en) | 2006-07-04 |
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Owner name: LG DISPLAY CO., LTD., KOREA, REPUBLIC OF Free format text: CHANGE OF NAME;ASSIGNOR:LG.PHILIPS LCD CO., LTD.;REEL/FRAME:021147/0009 Effective date: 20080319 Owner name: LG DISPLAY CO., LTD.,KOREA, REPUBLIC OF Free format text: CHANGE OF NAME;ASSIGNOR:LG.PHILIPS LCD CO., LTD.;REEL/FRAME:021147/0009 Effective date: 20080319 |
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