US7508706B2 - Nonvolatile semiconductor memory device provided with data register for temporarily holding data in memory array - Google Patents
Nonvolatile semiconductor memory device provided with data register for temporarily holding data in memory array Download PDFInfo
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- US7508706B2 US7508706B2 US11/655,154 US65515407A US7508706B2 US 7508706 B2 US7508706 B2 US 7508706B2 US 65515407 A US65515407 A US 65515407A US 7508706 B2 US7508706 B2 US 7508706B2
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/24—Bit-line control circuits
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- the present invention relates to a nonvolatile semiconductor memory device, and more particularly, to a nonvolatile semiconductor memory device provided with a data register for temporarily holding data in a burst accessing nonvolatile memory array.
- SRAM static random access memory
- some electrically rewritable nonvolatile semiconductor memory devices such as a burst reading or writing flash memory are provided with a data register for temporarily holding read data from the flash memory and written data to the flash memory.
- the data register includes a plurality of memory cells
- the method disclosed in Japanese Patent Laying-Open No. 06-223576 is also used to reduce the power consumption by the bit line pair in the data register.
- a nonvolatile semiconductor memory device includes a nonvolatile memory cell array including a plurality of memory cells, a data register including a plurality of memory cells, for temporarily holding read data from the nonvolatile memory cell array and written data to the nonvolatile memory cell array, a signal generation circuit for outputting a first signal having a pulse every reading or writing cycle with respect to the data register in a first mode, and generating a first signal by masking the signal having the pulse every reading or writing cycle with respect to the data register when reading or writing with respect to a memory cell other than a predetermined memory cell in the data register is designated in a second mode, and a first precharge circuit for precharging a bit line pair connected to the memory cell in the data register in response to activation of the first signal, wherein the signal generation circuit cancels the masking when reading or writing with respect to the predetermined memory cell in the data register is designated in the second mode.
- the nonvolatile semiconductor memory device of the present invention can be operated by selecting one of the first mode for precharging the bit line pair is precharged every access cycle with respect to the memory cell in the data register and the second mode for precharging the bit line pair when the specific memory cell in the data register is accessed.
- FIG. 1 is a view showing a constitution of a nonvolatile semiconductor memory device according to an embodiment of the present invention
- FIG. 2 is a view showing a constitution of a data register and a peripheral circuit group
- FIG. 3 is a view showing a mat in a data register and a constitution of a circuit connected to the mat;
- FIG. 4 is a view showing a constitution of a memory cell and a first precharge circuit
- FIG. 5 is a view for explaining an operation of data register and peripheral circuit group when data in a flash memory cell array is transferred to memory cells in the sub-mats for a high-order bit of all mats in data register;
- FIG. 6 is a schematic view showing a timing chart at a SLSRAM transfer in a first mode
- FIG. 7 is a schematic view showing a timing chart at the SLSRAM transfer in a second mode
- FIG. 8 is a view for explaining an operation of the data register and peripheral circuit group when the data from outside is transferred to memory cells in the sub-mat for a high-order bit and the sub-mat for a low-order bit in a mat in data register;
- FIG. 9 is a schematic view showing a timing chart at an IOSRAM transfer in a first mode
- FIG. 10 is a schematic view showing a timing chart at the IOSRAM transfer in a second mode
- FIG. 11 is a schematic view showing a constitution of a precharge signal generation circuit
- FIG. 12 is a detailed view showing a timing chart at the SLSRAM transfer in the second mode
- FIG. 13 is a detailed view showing a timing chart at the IOSRAM transfer in the second mode
- FIGS. 14A and 14B are views for explaining an operation of randomly outputting data in a page of flash memory cell array
- FIGS. 15A , 15 B and 1 5 C are views for explaining an operation of randomly updating the data in the page of flash memory cell array
- FIG. 16 is a view showing a precharge signal generation circuit according to a variation.
- FIG. 17 is a view showing a second precharge circuit.
- FIG. 1 is a view showing the constitution of a nonvolatile semiconductor memory device 100 according to an embodiment of the present invention.
- nonvolatile semiconductor memory device 100 includes a page address buffer 11 , a multiplexer 12 , a data input buffer 13 , a control signal buffer 14 , a read/write/erase control circuit 15 , an input data control circuit 17 , a column address counter 16 , a precharge signal generation circuit 50 , and a data output buffer 18 .
- Page address buffer 11 temporarily stores a page address signal.
- Multiplexer 12 receives written data from the outside through a data input/output terminal and outputs it to data input buffer 13 , receives read data from data output buffer 18 and outputs it to the outside through the data input/output terminal, and receives address data from the outside through the data input/output terminal and outputs it to column address counter 16 and read/write/erase control circuit 15 .
- Data input buffer 13 temporarily stores data inputted from the outside.
- Control signal buffer 14 receives a clock signal and a control signal from the outside, generates an internal clock signal and an internal control signal and outputs them to a corresponding component in nonvolatile semiconductor memory device 100 .
- Read/write/erase control circuit 15 controls the reading operation of the data from a flash memory cell array 20 , the writing operation of the data to flash memory cell array 20 , and the erasing operation of the data in flash memory cell array 20 .
- Input data control circuit 17 controls the transfer of the written data from data input buffer 13 to a data register 23 .
- Column address counter 16 holds a counter value for burst reading of data from flash memory cell array 20 and for burst writing of data to flash memory cell array 20 , and outputs an internal address signal based on the counter value.
- Precharge signal generation circuit 50 generates a precharge signal for precharging a bit line pair. Precharge signal generation circuit 50 generates different precharge signals between a first mode and a second mode. The bit line pair is precharged every reading or writing cycle in the first mode. It is precharged in a maximum column address in the second mode. Precharge signal generation circuit 50 will be described in detail later.
- Data output buffer 18 holds the data outputted from data register 23 temporarily, and outputs the data at the timing corresponding to the internal clock.
- nonvolatile semiconductor memory device 100 includes four banks Bank 0 to Bank 3 .
- Each bank includes an X decoder 19 , flash memory cell array 20 , and a data register and a peripheral circuit group 21 .
- X decoder 19 selects one of a plurality of word lines in flash memory cell array 20 in accordance with the page address signal outputted from page address buffer 11 and activates/deactivates the selected word line.
- Y decoder 25 selects column of flash memory cell array 20 and column of data register 23 in accordance with column address counter 16 .
- Flash memory cell array 20 includes a plurality of memory cells.
- Each of the plurality of memory cells has a source and a drain formed on a well surface in a semiconductor substrate, a floating gate formed on the source and the drain with a gate insulation film (tunnel insulation film) interposed therebetween, and a control gate formed on the floating gate with an ONO (Oxide-Nitride-Oxide) film interposed therebetween.
- Each memory cell stores two-bit data. Burst reading (continuous in the column direction) or writing is performed in the memory cell in flash memory cell array 20 .
- FIG. 2 is a view showing the constitution of data register and peripheral circuit group 21 .
- data register and peripheral circuit group 21 includes a sense latch part 22 , data register 23 , a word line driver 24 , a Y gate part 26 , a write driver part 27 , and a sense amplifier part 28 .
- Sense latch part 22 amplifies the data read from flash memory cell array 20 and temporarily holds the written data to flash memory cell array 20 .
- Data register 23 has eight mats Mat 0 to Mat 7 . Each mat is divided into sub-mats. A common word line WL is provided through eight mats Mat 0 to Mat 7 . In addition, a common precharge signal/BLEQ is supplied to eight mats Mat 0 to Mat 7 .
- word line driver 24 deactivates word line WL to “L” level and when precharge signal/BLEQ is deactivated to “H,” level, it activates word line WL to “H” level.
- Write driver part 27 includes one write driver WD every sub-mat.
- Sense amplifier part 28 includes one sense amplifier SA every sub-mat.
- Y gate part 26 includes Y gates Y 0 to Y 7 for memory cells C 0 to C 7 in data resister 23 , respectively.
- a bus connecting sense latch part 22 to data register 23 has ⁇ 64-bit constitution, and a bus connecting input data control circuit 17 to data register 23 and a bus connecting data output buffer 18 to data register 23 are ⁇ 8-bit and ⁇ 16-bit constitutions, respectively.
- FIG. 3 is a view showing one mat in data register 23 and a circuit constitution connected to the mat.
- each mat includes two sub-mats for a high-order bit and a low-order bit in accordance with 2 bits stored in the memory cell of flash memory cell array 20 .
- Each sub-mat includes memory cells C 0 to C 7 and first precharge circuits PR 0 to PR 7 .
- First precharge circuits PR 0 to PR 7 receive precharge signal/BLEQ and when precharge signal/BLEQ becomes “L” level, it precharges connected bit line pair BL, /BL to a potential of VDDP.
- Memory cells C 0 to C 7 are SRAM cells.
- FIG. 4 is a view showing the constitution of memory cell C 0 and first precharge circuit PR 0 .
- Other memory cells C 1 to C 7 and first precharge circuits PR 1 to PR 7 are all the same.
- memory cell C 0 is a SRAM cell including P channel MOS transistor P 11 to P 14 and N channel MOS transistors N 11 and N 12 .
- First precharge circuit PR 0 includes P channel MOS transistors P 15 , P 16 and P 17 .
- P channel MOS transistors P 15 , P 16 and P 17 are turned ON when precharge signal/BLEQ becomes “L” level and as a result, both bit lines BL and /BL are precharged to the potential of VDDP.
- each sub-mat includes a write driver WD and a sense amplifier SA.
- memory cells C 0 to C 7 are connected to write driver WD and sense amplifier SA.
- the memory cells C 0 to C 7 are designated by column addresses.
- Memory cell C 0 is designated by a minimum column address and memory cell C 7 is designated by a maximum column address.
- Y gates Y 0 to Y 7 control the connection/disconnection between the bit line pair, and sense amplifier SA and write driver WA.
- the Y gate connected to bit line pair BL, /BL corresponding to the designated column address (that is, bit line pair BL, /BL connected to the memory cell corresponding to the designated column address) is turned on for a predetermined time and other Y gates are OFF.
- Write driver WD is connected to a common wiring pair CL, /CL connected to a common connection node N of eight bit line pairs BL, /BL connected to memory cells C 0 to C 7 .
- Write driver WID transfers the data from sense latch part 22 or input data control circuit 17 to the memory cell in data register 23 through common wiring pair CL, /CL and bit line pair BL, /BL connected to the Y gate in ON state.
- Sense amplifier SA is connected to common wiring pair CL, /CL connected to common connection node N of eight bit line pairs BL, /BL connected to memory cells C 0 to C 7 .
- sense amplifier SA amplifies a potential difference between one common wiring pair CL, /CL to which the potential difference of bit line pair BL, /BL connected to the Y gate in ON state is applied and outputs it to data output buffer 18 or sense latch part 22 .
- the readout data of the flash memory cell is amplified by sense latch part 22 and then transferred to data register 23 .
- This transfer is referred to as a SLSRAM transfer hereinafter.
- the readout data in data register 23 is amplified by sense amplifier SA and transferred to data output buffer 18 .
- This transfer is referred to as a SRAMIO transfer hereinafter.
- the SLSRAM transfer will be described hereinafter.
- the SRAMIO transfer will be described later.
- the readout data is transferred from sense latch part 22 to each mat in data register 23 at the same time.
- the read out data is transferred to each mat such that it is transferred to the memory cell of the sub-mat for a high-order bit and then to the memory cell of the sub-mat for a low-order bit.
- the readout data is transferred to the memory cell in the order of C 0 , C 1 , . . . C 7 .
- FIG. 5 is a view for explaining the operation of data register and peripheral circuit group 21 when the data of flash memory cell array 20 is transferred to memory cells C 2 of the sub-mat for a high-order bit of all mats Mat 0 to Mat 7 .
- Y gate Y 2 of the sub-mat for a high-order bit becomes ON and the data is transferred from write drive WD to memory cell C 2 of the sub-mat for a high-order bit.
- FIG. 6 is a schematic view showing a timing chart at the SLSRAM transfer in the first mode.
- precharge signal/BLEQ is deactivated to “H,” level first.
- first precharge circuits PR 0 to PR 7 finish precharging of all bit line pairs BL, /BL.
- word line driver 24 activates word line WL to “H,” level.
- Y gates Y 0 of the sub-mat for a high-order bit of all mats Mat 0 to Mat 7 are turned ON and the readout data of the flash memory is outputted from write driver WD to memory cell C 0 and written in data register 23 .
- precharge signal/BLEQ is activated to “L” level.
- word line driver 24 deactivates word line WL to “L” level and then first precharge circuits PR 0 to PR 7 precharge all bit line pairs BL, /BL.
- precharge signal/BLEQ is deactivated to “H,” level.
- first precharge circuits PR 0 to PR 7 finish precharging of all bit line pairs BL, /BL.
- word line driver 24 activates word line WL to “H,” level.
- Y gates Y 1 of the sub-mat for a high-order bit of all mats Mat 0 to Mat 7 are turned ON and the readout data of the flash memory is outputted from write driver WD to memory cell C 1 and written in data register 23 .
- precharge signal/BLEQ is activated to “L” level.
- word line driver 24 deactivates word line WL to “L” level and then first precharge circuits PR 0 to PR 7 precharge all bit line pairs BL, /BL.
- precharge signal/BLEQ is deactivated to “H” level.
- first precharge circuits PR 0 to PR 7 finish precharging of all bit line pairs BL, /BL.
- word line driver 24 activates word line WL to “H” level.
- bit line pair BL 2 , /BL 2 connected to memory cell C 2 is changed to the level corresponding to the readout data of the flash memory.
- precharge signal/BLEQ is activated to “L” level.
- word line driver 24 deactivates word line WL to “L” level and then first precharge circuits PR 0 to PR 7 precharge all bit line pairs BL, /BL.
- precharge signal/BLEQ is deactivated to “H” level.
- first precharge circuits PR 0 to PR 7 finish precharging of all bit line pairs BL, /BL.
- word line driver 24 activates word line WL to “H” level.
- FIG. 7 is a schematic vies showing a timing chart at the SLSRAM transfer in the second mode.
- precharge signal/BLEQ is deactivated to “H” level first. Then, first precharge circuits PR 0 to PR 7 finish the precharging of all bit line pairs BL, /BL.
- word line driver 24 activates word line WL to “H” level.
- Y gates Y 0 of the sub-mats for a high-order bit of all mats Mat 0 to Mat 7 are turned ON and the readout data of the flash memory is outputted from write driver WD to memory cell C 0 and written in data register 23 .
- Y gates Y 1 of the sub-mats for a high-order bit of all mats Mat 0 to Mat 7 are turned ON and the readout data of the flash memory is outputted from write driver WD to memory cells C 1 of the sub-mats for a high-order bit of all Mat 0 to Mat 7 and written in data register 23 .
- bit line pair BL, /BL 2 connected to memory cell C 2 is changed to the level corresponding to the readout data of the flash memory.
- Y gates Y 7 of the sub-mats for a high-order bit of all mats Mat 0 to Mat 7 are turned ON and the readout data is outputted to memory cells C 7 of the sub-mats for a high-order bit of all mats Mat 0 to Mat 7 and then, precharge signal/BLEQ is activated to “L” level.
- word line driver 24 deactivates word line WL to “L” level and then first precharge circuits PR 0 to PR 7 precharge all bit line pairs BL, /BL.
- precharging and activation/deactivation of word line are performed every access cycle with respect to data register 23 in the first mode
- precharging and activation/deactivation are performed every eight accesses (for eight columns) to data register 23 in the second mode, so that power consumption can be saved in the second mode as compared with the first mode.
- the IOSTRAM transfer will be described hereinafter.
- the SRAMSL transfer will be described later.
- written data is transferred from input data control circuit 17 to mats Mat 0 Mat 1 , . . . Mat 7 in data register 23 in this order.
- the written data is transferred to the memory cell of the sub-mat for a high-order bit and the memory cell of the sub-mat for a low-order bit in each mat at the same time.
- the written data is transferred to memory cells C 0 , C 1 , . . . C 7 in this order.
- FIG. 8 is a view for explaining the operation of data register and peripheral circuit group 21 when data is transferred from the outside to memory cell C 0 of the sub-mats for a high-order bit and sub-mat for a low-order bit of mat (Mat 2 ) in data register 23 .
- Y gates Y 0 of the sub-mat for a high-order bit and sub-mat for a low-order bit are turned ON and the data is transferred from write drivers WD to memory cells C 0 of the sub-mat for a high-order bit and sub-mat for a low-order bit.
- FIG. 9 is a schematic view showing a timing chart at the IOSRQM transfer in the first mode.
- precharge signal/BLEQ is deactivated to “H” level first.
- first precharge circuits PR 0 to PR 7 finish precharging of all bit line pairs BL, /BL.
- word line driver 24 activates word line WL to “H” level.
- Y gates Y 0 of the sub-mat for a high-order bit and sub-mat for a low-order bit of mat Mat 0 are turned ON and the written data is outputted from write driver WD to memory cells C 0 of the sub-mat for a high-order bit and sub-mat for a low-order bit of mat Mat 0 .
- the precharge signal/BLEQ is activated to “L” level.
- word line driver 24 deactivates word line WL to “L” level and first precharge circuits PR 0 to PR 7 precharge all bit line pairs BL, /BL.
- precharge signal/BLEQ is deactivated to “H” level.
- first precharge circuits PR 0 to PR 7 finish precharging of all bit line pairs BL, /BL.
- word line driver 24 activates word line WL to “H” level.
- Y gates Y 0 of the sub-mat for a high-order bit and sub-mat for a low-order bit of mat Mat 1 is turned ON and the written data is outputted from write driver WD to memory cells C 0 of the sub-mat for a high-order bit and sub-mat for a low-order bit of mat Mat 1 .
- the precharge signal/BLEQ is activated to “L” level.
- word line driver 24 deactivates word line WL to “L” level and first precharge circuits PR 0 to PR 7 precharge all bit line pairs BL, /BL.
- precharge signal/BLEQ is deactivated to “H” level.
- first precharge circuits PR 0 to PR 7 finish precharging of all bit line pairs BL, /BL.
- word line driver 24 activates word line WL to “H” level.
- bit line pairs BL 0 , /BL 0 connected to memory cells C 0 of the sub-mat for a high-order bit and sub-mat for a low-order bit of mat Mat 2 are changed to the level corresponding to the written data.
- FIG. 10 is a schematic view showing a timing charge at the IOSTAM transfer in the second mode.
- precharge signal/BLEQ is deactivated to “H” level first.
- first precharge circuits PR 0 to PR 7 finish precharging of all bit line pairs BL, /BL.
- word line driver 24 activates word line WL to “H” level.
- Y gates Y 0 of the sub-mat for a high-order bit and sub-mat for a low-order bit of mat Mat 0 are turned 0 N and the written data is outputted from write driver WD to memory cells C 0 of the sub-mat for a high-order bit and sub-mat for a low-order bit of mat Mat 0 .
- Y gates Y 0 of the sub-mat for a high-order bit and sub-mat for a low-order bit of mat Mat 1 is turned ON and the written data is outputted from write driver WD to memory cells C 0 of the sub-mat for a high-order bit and sub-mat for a low-order bit of mat Mat 1 .
- Y gates Y 0 of the sub-mat for a high-order bit and sub-mat for a low-order bit of mat Mat 2 is turned ON and the written data is outputted from write driver WD to memory cells C 0 of the sub-mat for a high-order bit and sub-mat for a low-order bit of mat Mat 2 .
- bit line pairs BL 0 , /BL 0 connected to memory cells C 0 of the sub-mat for a high-order bit and sub-mat for a low-order bit of mat Mat 2 are changed to the level corresponding to the written data.
- precharging and activation/deactivation of word line are performed every access cycle with respect to data register 23 in the first mode
- precharging and activation/deactivation are performed of the every 64 accesses (8 mats ⁇ 8 columns) to data register 23 in the second mode, so that power consumption can be saved in the second mode as compared with the first mode.
- the precharge timing of the SRAMSL transfer is basically the same as that of the SLSRAM transfer. However, while write driver WD outputs data to the memory cell in the SLSRAM transfer, the data in the memory cell is outputted to sense amplifier SA in SRAMSL transfer.
- data is read out from memory cells C 0 of the sub-mats for a high-order bit and sub-mats for a low-order bit of all mats in data register 23 at the same time and sent to sense amplifiers SA.
- the sense amplifier SA calculates the data for a high-order bit and the data for a low-order bit and determines whether the data is written in the flash memory or not according to the calculated result and outputs the data to the sense latch when the data is to be written. Then, the same operations are performed in memory cells C 1 , . . . , C 7 in this order.
- the precharge timing of the SRAMIO transfer is basically the same as that of the IOSRAM transfer. However, while write driver WD outputs data to the memory cell in the IOSRAM transfer, the data in the memory cell is outputted to sense amplifier SA in the SRAMIO transfer.
- FIG. 11 is a schematic view showing the constitution of precharge signal generation circuit 50 .
- precharge signal generation circuit 50 includes NAND circuits 51 to 54 , NOR circuits 55 and 56 , NAND circuits 57 to 59 , inverters 60 and 61 , NAND circuits 62 and 63 , an inverter 64 , an NOR circuit 65 , an inverter 66 , and an inverter 67 .
- Precharge signal generation circuit 50 receives internal address signals AT ⁇ 0> to AT ⁇ 5>, an internal clock signal XEP, a mode designation signal CKE_B and a transfer destination designation signal SLSRAM.
- mode designation signal CKE_B When the first mode is designated, mode designation signal CKE_B becomes “L” level. When the second mode is designated, mode designation signal CKE_B becomes “H” level. In addition, when the SLSRAM transfer and the SRAMSL transfer are designated, transfer destination designation signal SLSRAM becomes “H” level. When the IOSRAM transfer and the SRAMIO transfer are designated, transfer destination designation signal SLRAM becomes “L” level.
- Internal clock signal XEP includes a pulse every reading or writing cycle.
- a precharge mask signal EQBMSK is deactivated to “L” level.
- precharge signal/BLEQ including a pulse every cycle generated by a pulse of internal clock XEP is outputted from NOR circuit 65 and inverter 66 .
- the column address in the sub-mat is designated by internal address signals AT ⁇ 3> to AT ⁇ 5>.
- the designated column address is not a maximum column address, that is, when any of internal address signals AT ⁇ 3> to AT ⁇ 5> is at “L” level, precharge mask signal EQB_MSK is activated to “H” level.
- precharge mask signal EQB_MSK is activated to “H” level.
- precharge mask signal EQB_MSK is deactivated to “L” level.
- the masking by the precharge mask signal is canceled and precharge signal/BLEQ including a pulse every cycle generated by the change of internal clock XEP is outputted.
- the column address in the sub-mat is designated by internal address signals AT ⁇ 3> to AT ⁇ 5>, and any one of eight mats Mat 0 to Mat 7 is designated by internal address signals AT ⁇ 0> to AT ⁇ 2>.
- precharge mask signal EQB_MSK is activated to “H” level.
- precharge mask signal EQB_MSK is deactivated to “L” level.
- the masking by precharge mask signal is canceled and precharge signal/BLEQ including the pulse every cycle generated by the change of internal clock XEP is outputted.
- precharge signal generation circuit 50 outputs precharge signal/BLEQ at “L” level showing activation by means (a logical circuit receiving a signal showing a standby state) (not shown) at standby, in both first and second modes.
- the time of standby means a state in which reading or writing operation is not performed in nonvolatile semiconductor memory device 100 .
- FIG. 12 is a detailed view showing the timing chart at the SLSRAM transfer in the second mode.
- precharge signal/BLEQ is activated to “L” level at standby.
- word line WL designated by an internal address signal (except for signals AT ⁇ 0> to AT ⁇ 5>) is deactivated and bit line pair BL, /BL is precharged.
- mode designation signal CKE_B becomes “H” level and transfer destination designation signal SLSRAM becomes “H” level.
- precharge mask signal EQB_MSK is activated to “H” level.
- precharge signal/BLEQ is deactivated to “H” level.
- word line WL designated by the internal address signal is activated.
- Y gates Y 0 corresponding to the head columns of the sub-mats for a high-order bit of mats Mat 0 to Mat 7 are turned ON by internal address signal (AT ⁇ 3> to AT ⁇ 5> are all at “L” level), and data is transferred to memory cell C 0 of that column.
- precharge mask signal EQB_MSK is deactivated to “L” level by the internal address signal (AT ⁇ 3> to AT ⁇ 5> are all at “H” level) and the masking is canceled.
- precharge signal/BLEQ becomes a signal including the pulse every cycle generated by the change of internal clock XEP.
- word line WL designated by the internal address signal is deactivated and bit line pair BL, /BL is precharged.
- the data in the memory cell is outputted to sense amplifier SA.
- FIG. 13 is a detailed view showing the timing chart at the IOSRAM transfer in the second mode.
- precharge signal/BLEQ is activated to “L” level at standby.
- word line WL designated by an internal address signal (except for signals AT ⁇ 0> to AT ⁇ 5>) is deactivated and bit line pair BL, /BL is precharged.
- mode designation signal CKE_B becomes “H” level and transfer destination designation signal SLSRAM becomes “L” level.
- precharge mask signal EQB_MSK is activated to “H” level.
- precharge signal/BLEQ is deactivated to “H” level.
- word line WL designated by the internal address signal is activated.
- Y gates Y 0 corresponding to the head columns of the sub-mats for a high-order bit and sub-mat for a low-order bit of mat Mat 0 are turned ON by the internal address signal (AT ⁇ 0> to AT ⁇ 5>are all at “L” level), and data is transferred to memory cell C 0 of that column.
- precharge mask signal EQB_MSK is kept at “H” level and precharge signal/BLEQ is kept deactivated at “H” level.
- precharge mask signal EQB_MSK is deactivated to “L” level by internal address signal (AT ⁇ 0> to AT ⁇ 5> are all “H” level) and the masking is canceled.
- precharge signal/BLEQ becomes the signal including a pulse every cycle generated by the change of internal clock XEP.
- word line WL designated by the internal address signal is deactivated and bit line pair BL, /BL is precharged.
- the data in the memory cell is outputted to sense amplifier SA.
- nonvolatile semiconductor memory device 100 can be operated by selecting one of the first mode for precharging the bit line pair every access cycle with respect to the memory cell in the data register and the second mode for precharging the bit line pair when a specific memory cell in the data register is accessed, realizing a flexible use.
- the present invention is not limited to the above embodiment and it may include the following variation.
- data reading and writing are performed from the head column of the minimum address to the last column of the maximum address in data register 23
- the present invention is not limited to this.
- data reading and writing may be started from a column of a middle column address in data register 23 .
- precharge signal generation circuit 50 shown in FIG. 11 starts data reading and writing from the column of the middle column address in data register 23 , it outputs precharge signal/BLEQ at “L” level showing activation by means (not shown) in both first and second modes at standby.
- precharge mask signal EQB_MSK is deactivated to “L” level.
- precharge mask signal EQB_MSK is deactivated to “L” level.
- FIGS. 14A and 14B are views for explaining the operation of randomly outputting data in the page of flash memory cell array 20 to the outside.
- data in page M of flash memory cell array 20 is transferred to data register 23 first.
- the data of column K in data register 23 is outputted to the outside through the data input/output terminal and then the data is sequentially outputted to the outside from column L which is not adjacent to column K through the data input/output terminal until the last column.
- FIGS. 15A , 15 B and 15 C are views for explaining the operation of randomly updating the data in the page of flash memory cell array 20 .
- the data in page M in flash memory cell array 20 is transferred to data register 23 .
- the data in column K in data register 23 is updated to data from the outside through the data input/output terminal.
- common wiring pair CL, /CL is not precharged.
- FIG. 16 is a view showing a precharge signal generation circuit 51 in a variation.
- precharge signal generation circuit 51 in the variation further includes an NOR circuit 71 and an inverter 72 in addition to the circuits included in precharge signal generation circuit 50 shown in FIG. 11 , and outputs another precharge signal/BLEQ 2 in addition to precharge signal/BLEQ.
- a read designation signal READ becomes “L” level when data is read from data register 23 .
- precharge signal/BLEQ 2 includes a pulse every cycle generated by the change of internal clock XEP is outputted.
- FIG. 17 is a view showing a second precharge circuit PRR.
- second precharge circuit PRR includes P channel MOS transistors P 30 , P 31 and P 32 .
- P channel MOS transistors P 30 , P 31 and P 32 are turned ON when precharge signal/BLEQ 2 becomes “L” level, and as a result, both common wiring lines CL and /CL are precharged to the potential of VDDP.
- each sub-mat in data register 23 includes memory cells having one row and eight columns in the embodiment of the present invention, the present invention is not limited to this.
- each sub-mat may include memory sells having X row (X is an integer not less than 1) and may have Y column (Y is an integer not less than 1).
- each mat in data register 23 includes the sub-mat for a high-order bit and sub-mat for a low-order bit in accordance with two bits stored in the memory cell of flash memory cell array 20 .
- each mat in data register 23 may include N sub-mats in accordance with the bits stored in the memory cell in flash memory cell array 20 .
- each mat includes a pair of sub-mats for a high-order bit and low-order bit in accordance with two bits of the memory cell in flash memory cell array 20 .
- L L is positive integer not less than 1
- pair of sub-mats for a high-order bit and low-order bit may be provided.
- SRAMSL transfer and IOSRAM transfer at writing (SLSRAM transfer and IOSRAM transfer) to the data register, data is written in L sub-mats at the same time and at reading (SRAMSL transfer and SRAMIO transfer) from the data register, data is read from the L sub-mats at the same time.
- the number of mats, the number of banks, the bit constitution of the bus between sense latch portion 22 and data register 23 , the bit constitution of the bus between input data control circuit 17 and data register 23 , and bit constitution of the bus between data output buffer 18 and data register 23 described in the embodiment of the present invention are one example and the present invention is not limited to these.
Abstract
Description
Claims (9)
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JP2006018074A JP2007200457A (en) | 2006-01-26 | 2006-01-26 | Nonvolatile semiconductor storage device |
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US20090175074A1 (en) * | 2007-12-21 | 2009-07-09 | Em Microelectronic-Marin S.A. | Device for reading a low-consumption non-volatile memory and its implementing method |
US20110228602A1 (en) * | 2010-03-17 | 2011-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and semiconductor device |
US20120011298A1 (en) * | 2010-07-07 | 2012-01-12 | Chi Kong Lee | Interface management control systems and methods for non-volatile semiconductor memory |
US9135168B2 (en) | 2010-07-07 | 2015-09-15 | Marvell World Trade Ltd. | Apparatus and method for generating descriptors to reaccess a non-volatile semiconductor memory of a storage drive due to an error |
US9141538B2 (en) | 2010-07-07 | 2015-09-22 | Marvell World Trade Ltd. | Apparatus and method for generating descriptors to transfer data to and from non-volatile semiconductor memory of a storage drive |
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KR102653251B1 (en) * | 2018-09-07 | 2024-04-01 | 에스케이하이닉스 주식회사 | High Speed Data Readout Apparatus, and CMOS Image Sensor Using That |
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US20090175074A1 (en) * | 2007-12-21 | 2009-07-09 | Em Microelectronic-Marin S.A. | Device for reading a low-consumption non-volatile memory and its implementing method |
US7843737B2 (en) * | 2007-12-21 | 2010-11-30 | Em Microelectronic-Marin S.A. | Device for reading a low-consumption non-volatile memory and its implementing method |
US20110228602A1 (en) * | 2010-03-17 | 2011-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and semiconductor device |
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US20120011298A1 (en) * | 2010-07-07 | 2012-01-12 | Chi Kong Lee | Interface management control systems and methods for non-volatile semiconductor memory |
US8868852B2 (en) * | 2010-07-07 | 2014-10-21 | Marvell World Trade Ltd. | Interface management control systems and methods for non-volatile semiconductor memory |
US9135168B2 (en) | 2010-07-07 | 2015-09-15 | Marvell World Trade Ltd. | Apparatus and method for generating descriptors to reaccess a non-volatile semiconductor memory of a storage drive due to an error |
US9141538B2 (en) | 2010-07-07 | 2015-09-22 | Marvell World Trade Ltd. | Apparatus and method for generating descriptors to transfer data to and from non-volatile semiconductor memory of a storage drive |
US9183141B2 (en) | 2010-07-07 | 2015-11-10 | Marvell World Trade Ltd. | Method and apparatus for parallel transfer of blocks of data between an interface module and a non-volatile semiconductor memory |
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US20070183200A1 (en) | 2007-08-09 |
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