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Transmission ion microscope

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US7414243B2
US7414243B2 US11146741 US14674105A US7414243B2 US 7414243 B2 US7414243 B2 US 7414243B2 US 11146741 US11146741 US 11146741 US 14674105 A US14674105 A US 14674105A US 7414243 B2 US7414243 B2 US 7414243B2
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ion
beam
microscope
sample
lens
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US20060284091A1 (en )
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Billy W. Ward
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ALIS Corp
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ALIS Corp
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26Electron or ion microscopes; Electron or ion diffraction tubes
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06Sources
    • H01J2237/08Ion sources
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06Sources
    • H01J2237/08Ion sources
    • H01J2237/0802Field ionization sources
    • H01J2237/0807Gas field ion sources [GFIS]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26Electron or ion microscopes
    • H01J2237/262Non-scanning techniques

Abstract

Transmission ion microscope. A bright light ion source generates an ion beam that is focused on a sample by an electrostatic condenser lens means. An objective lens focuses the ion beam transmitted through the sample to form an image. A projector lens enlarges the image and a phosphor screen receives the enlarged image to generate light allowing visualization of the image.

Description

BACKGROUND OF THE INVENTION

This invention relates to microscopy and more particularly to a transmission ion microscope using a bright light ion source.

The transmission electron microscope (TEM) has been in use for almost fifty years and has atomic or near atomic resolution. A transmission electron microscope sends a focused beam of electrons through a sample and an image is created on a phosphor screen by transmitted electrons so that atomic structure of the sample can be visualized. A TEM is a large, complex and expensive tool utilizing very high energy electrons. The use of very high energy electrons results in an operational burden.

Atomic level surface structure from thick samples can be obtained by scanning tunneling microscopy (STM) and, to a lesser extent, by atomic force microscopy (AFM). These are slow methods that require mechanically scanning a very fine needle-shaped tip over a sample. These methods cannot, however, provide information on what is below the top atomic layer of the sample.

A detailed understanding of the operation of the aforementioned, presently available TEM and STM microscopes is held by many persons skilled in the art of high resolution microscopes. There are myriad public domain publications, classroom text books, and microscope vendor publications that discuss such prior art microscopes. A commonly available publication provided by a microscope vendor is JEOL News, Vol. 37E, No. 1, 2002. Exemplary text books that teach the above mentioned microscopes include Scanning Electron Microscopy and X-Ray Microanalysis by Joseph Goldstein (Editor); Scanning and Electron Microscopy: An Introduction by Stanley L. Flagler, et al.; High Resolution Focused Ion Beams: FIB and Its Applications by John Orloff; Materials Analysis Using A Nuclear Microprobe by Mark B. H. Breese; and Scanning Probe Microscopy and Spectroscopy: Theory, Techniques and Applications by Dawn Bonnell (Editor). The contents of all of these references are incorporated herein by reference in their entirety. Those skilled in the art will appreciate that existing microscopes lack sufficient contrast capability for a fuller understanding of the microscopic world.

SUMMARY OF THE INVENTION

In one aspect, the transmission ion microscope of the invention includes a bright light ion source that generates and ion beam. An electrostatic condenser lens means focuses the ion beam onto a sample. An objective lens focuses the ion beam transmitted through the sample to form an image and a projection lens enlarges the image. A phosphor screen receives the enlarged image to generate light allowing visualization of the image. In a preferred embodiment, the ion beam is a beam of helium ions. It is preferred that the source provide isolated ion emission sites of a small number of atoms. A preferred ion beam energy is in the range between 1000V and 1000 keV.

Another embodiment further includes a condenser aperture between the electrostatic condenser lens means and the sample to exclude high angle ions. An objective aperture and a selected area aperture between the objective lens and the projector lens may also be provided to restrict the beam. The objective aperture enhances contrast by blocking out high-angle diffracted electrons while the selected area aperture enables a user to examine the periodic diffraction of electrons by ordered arrangements of atoms in the sample. The electrostatic condenser lens means may include first and second condenser lenses. It is also preferred that the ion beam have a sub-nanometer beam diameter.

BRIEF DESCRIPTION OF THE DRAWING

The single FIGURE of the drawing is a schematic illustration of the transmission ion microscope according to one embodiment of the invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

The transmission ion microscope of the invention works substantially the same way as known transmission electron microscopes (TEM) that can be thought of as an analogy to a slide projector. A slide projector shines a beam of light through a slide and as the light passes through it is affected by the structures and objects on the slide. These effects result in only certain parts of the light beam being transmitted through certain parts of the slide. The transmitted beam is then projected through a viewing screen forming an enlarged image of the slide.

Existing prior art transmission electron microscopes work the same way as a slide projector except that such microscopes shine a beam of electrons through a specimen rather than light. Whatever part of the electron beam is transmitted is projected onto a phosphor screen for the user to see. In the present invention, the source of ions replaces a source of electrons in a typical TEM.

With reference to the single FIGURE of the drawing, an ion source 10 generates preferably a sub-nanometer beam of ions. Helium ions are preferred. A suitable ion source is described in “Ion Sources for Nanofabrication and High Resolution Lithography”, J. Melngailis, IEEE Proceedings of the 2001 Particle Accelerator Conference, Chicago, Ill. (2002), the contents of which are incorporated herein by reference. See, also “Growth and Current Charities of a Stable Field Ion Emitter,” K. Jousten et al., Ultramicroscope 26, pp. 301–312 (1988) and “Maskless, Resistless Ion Beam Lithography Process,” Qing Ji, Ph.D. Dissertation, Department of Electrical Engineering and Computer Sciences, University of California, Berkeley (2003), the contents of both of which are incorporated herein by reference. An ion beam 12 from the ion source 10 passes through first 14 and second 16 condenser lenses that focus the ion beam 12 to a small, thin, coherent beam. The first lens 14 (usually controlled by a “spot size knob”) largely determines the “spot size” which is the general size range of the final spot that strikes a sample 18. The second condenser lens 16 (usually controlled by an “intensity or brightness knob”) actually changes the size of the spot on the sample, changing it from a wide dispersed spot to a pinpoint beam. In this embodiment a condenser aperture 20 restricts the beam 12 by knocking out high angle ions, that is, ions far from the optic axis down the center of the microscope. After passing through the condenser aperture 20 the beam 12 strikes the sample 18 and parts of the beam are transmitted through the sample. The transmitted portion is focused by an objective lens 22 to form an image. An optional objective aperture 24 and optional selected area aperture 26 may be provided to restrict the transmitted beam. The objective aperture 24 enhances contrast by blocking high-angle diffracted ions while the selected area aperture 26 enables a user to examine the periodic diffraction of ions by ordered arrangements of ions in the sample 18.

The image formed by the objective lens 22 continues down the microscope column through intermediate lenses and a projector lens 28 and then strikes a phosphor image screen 30. The phosphor screen 30 generates light allowing the user to see the image. The darker areas of the image represent those areas of the sample through which fewer ions were transmitted (they are thicker or denser). The lighter areas of the image represent those areas of the sample through which more ions were transmitted (they are thinner or less dense). The high brightness ion source 10 produces a helium ion beam with energy between 1000V and 1000 keV. By limiting the number of emission sites that share the helium gas, a notable increase in current and density from the remaining emitting sites occurs. The lenses used in this embodiment are electrostatic lenses rather than the magnetic lenses typically used in TEMs. The microscope of the invention takes advantage of the unusually long range of light ions in matter. The collection of the transmitted (bright field) and/or scattered (dark field) ions will provide structural information about the sample in a manner never seen before. Further, the interaction dynamics of an ion beam with the sample material is different from the interaction of an electron beam in prior art microscopes. With the present invention, one will see more effects from the atomic centers and less from the electronic structure of the samples. This phenomenon may best be explained as “nuclear contrast.” In a “bright field” picture dark pixels are a result of ions that interact with the atom nuclei in the sample which are then scattered away from the phosphor screen or absorbed in the sample. Bright pixels in the image are a result of ions that are not scattered or absorbed by the atoms in the sample. In the case of a “dark field” picture the contrast is reversed, or inverted, from the previous case.

The microscope of the invention is likely to be simpler, smaller and weigh less than a TEM because of the electrostatic optics used with the ion microscope of the invention. The contrast in the image will also be higher than with a TEM. The image will have more elemental contrast and the image quality may be enhanced with a charged neutralizer. The temperature of the sample may also change the quality of the image. Another contrast mechanism may arise from vibration in the sample as a result of interaction with the ion beam.

Because crystal orientation of the sample may be important, a tilting sample holder may be desirable and should also be capable of an X-Y motion. The contrast in the image may also be affected by voltage and a comparison of pictures taken at different voltages may provide yet another contrast mechanism. The energy loss of the beam at each position will also carry information about the composition of the sample material. We note that a traditional STIM uses high energy ion beams produced in accelerators and even then the resolution is limited to 50–100 nm. Low energy ion scatter spectroscopy may also be utilized to identify the elements in the sample.

Claims (21)

1. A transmission ion microscope, comprising:
a bright light ion source configured to generate an ion beam;
a first condenser lens;
a second condenser lens, the first and second condenser lenses being configured to focus the ion beam onto a sample;
a condenser aperture between the second condenser lens and the sample, the condenser aperture being configured to exclude high angle ions;
an objective lens configured to focus the ion beam transmitted through the sample to form an image;
a projector lens configured to enlarge the image; and
a screen configured to receive the enlarged image to generate light allowing visualization of the image.
2. The microscope of claim 1 wherein the ion beam comprises helium ions.
3. The microscope of claim 2 wherein the ion beam energy is between 1000V and 1000 keV.
4. The microscope of claim 1 wherein the ion source provides isolated ion emission sites of a small number of atoms.
5. The microscope of claim 1 further including an objective aperture and a selected area aperture between the objective lens and the projector lens.
6. The microscope of claim 1 wherein the ion beam has sub-nanometer beam diameter.
7. The microscope of claim 1, wherein the screen is a phosphor screen.
8. The transmission ion microscope of claim 7, wherein the ion source provides isolated ion emission sites of a small number of atoms.
9. The transmission ion microscope of claim 8, wherein the ion beam energy is between 1000 V to 1000 KeV.
10. The transmission ion microscope of claim 9, wherein the ion beam has sub-nanometer beam diameter.
11. The transmission ion microscope of claim 10, wherein the ion beam has sub-nanometer beam diameter.
12. A method, comprising:
using the transmission ion microscope of claim 1 to image a sample.
13. A method, comprising:
using the transmission ion microscope of claim 7 to image a sample.
14. A transmission ion microscope, comprising:
an ion source configured to generate an ion beam;
a first condenser lens;
a second condenser lens;
a condenser aperture; and
an objective lens,
wherein during use of the transmission ion microscope:
the ion source creates an ion beam that passes through the first condenser lens, the second condenser and the condenser aperture before reaching the sample; and
ions pass through the objective lens after passing through the sample.
15. The transmission ion microscope of claim 14, further comprising a projector lens, wherein during use of the transmission ion microscope ions pass through the projector lens after passing through the objective lens.
16. The transmission ion microscope of claim 15, further including an objective aperture and a selected aperture between the objective lens and the projector lens.
17. The transmission ion microscope of claim 16, further comprising a screen configured to receive ions after they pass through the projector lens.
18. The transmission ion microscope of claim 17, wherein the screen allows a user to see an image created by the projector lens.
19. The transmission ion microscope of claim 17, wherein the screen is a phosphor screen.
20. The transmission ion microscope of claim 14, wherein the ion beam has sub-nanometer beam diameter.
21. The transmission ion microscope of claim 20, wherein the ion beam energy is between 1000 V to 1000 KeV.
US11146741 2005-06-07 2005-06-07 Transmission ion microscope Active US7414243B2 (en)

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US11146741 US7414243B2 (en) 2005-06-07 2005-06-07 Transmission ion microscope

Applications Claiming Priority (22)

Application Number Priority Date Filing Date Title
US11146741 US7414243B2 (en) 2005-06-07 2005-06-07 Transmission ion microscope
PCT/US2006/022107 WO2006133291A3 (en) 2005-06-07 2006-06-07 Transmission ion miscroscope
US11600861 US7557360B2 (en) 2003-10-16 2006-11-15 Ion sources, systems and methods
US11600535 US7488952B2 (en) 2003-10-16 2006-11-15 Ion sources, systems and methods
US11599954 US7557358B2 (en) 2003-10-16 2006-11-15 Ion sources, systems and methods
US11600711 US7557359B2 (en) 2003-10-16 2006-11-15 Ion sources, systems and methods
US11600874 US7557361B2 (en) 2003-10-16 2006-11-15 Ion sources, systems and methods
US11600361 US7485873B2 (en) 2003-10-16 2006-11-15 Ion sources, systems and methods
US11600252 US7504639B2 (en) 2003-10-16 2006-11-15 Ion sources, systems and methods
US11599915 US7554097B2 (en) 2003-10-16 2006-11-15 Ion sources, systems and methods
US11600873 US7786452B2 (en) 2003-10-16 2006-11-15 Ion sources, systems and methods
US11599973 US7786451B2 (en) 2003-10-16 2006-11-15 Ion sources, systems and methods
US11599935 US7521693B2 (en) 2003-10-16 2006-11-15 Ion sources, systems and methods
US11599879 US7554096B2 (en) 2003-10-16 2006-11-15 Ion sources, systems and methods
US11600250 US7511279B2 (en) 2003-10-16 2006-11-15 Ion sources, systems and methods
US11600513 US7511280B2 (en) 2003-10-16 2006-11-15 Ion sources, systems and methods
US11600515 US7495232B2 (en) 2003-10-16 2006-11-15 Ion sources, systems and methods
US11600646 US7518122B2 (en) 2003-10-16 2006-11-15 Ion sources, systems and methods
US12364259 US8110814B2 (en) 2003-10-16 2009-02-02 Ion sources, systems and methods
US13356854 US8748845B2 (en) 2003-10-16 2012-01-24 Ion sources, systems and methods
US14286453 US9012867B2 (en) 2003-10-16 2014-05-23 Ion sources, systems and methods
US14684607 US9236225B2 (en) 2003-10-16 2015-04-13 Ion sources, systems and methods

Related Parent Applications (5)

Application Number Title Priority Date Filing Date
US10966243 Continuation-In-Part US7368727B2 (en) 2003-10-16 2004-10-15 Atomic level ion source and method of manufacture and operation
US11147102 Continuation-In-Part US7321118B2 (en) 2005-06-07 2005-06-07 Scanning transmission ion microscope
US11385215 Continuation-In-Part US7601953B2 (en) 2006-03-20 2006-03-20 Systems and methods for a gas field ion microscope
US11385136 Continuation-In-Part US20070228287A1 (en) 2006-03-20 2006-03-20 Systems and methods for a gas field ionization source
US11385361 Continuation-In-Part 2006-03-21

Related Child Applications (17)

Application Number Title Priority Date Filing Date
US11147102 Continuation-In-Part US7321118B2 (en) 2005-06-07 2005-06-07 Scanning transmission ion microscope
US11385136 Continuation-In-Part US20070228287A1 (en) 2006-03-20 2006-03-20 Systems and methods for a gas field ionization source
US11599973 Continuation-In-Part US7786451B2 (en) 2003-10-16 2006-11-15 Ion sources, systems and methods
US11600711 Continuation-In-Part US7557359B2 (en) 2003-10-16 2006-11-15 Ion sources, systems and methods
US11600874 Continuation-In-Part US7557361B2 (en) 2003-10-16 2006-11-15 Ion sources, systems and methods
US11600535 Continuation-In-Part US7488952B2 (en) 2003-10-16 2006-11-15 Ion sources, systems and methods
US11600361 Continuation-In-Part US7485873B2 (en) 2003-10-16 2006-11-15 Ion sources, systems and methods
US11600861 Continuation-In-Part US7557360B2 (en) 2003-10-16 2006-11-15 Ion sources, systems and methods
US11600252 Continuation-In-Part US7504639B2 (en) 2003-10-16 2006-11-15 Ion sources, systems and methods
US11600515 Continuation-In-Part US7495232B2 (en) 2003-10-16 2006-11-15 Ion sources, systems and methods
US11599935 Continuation-In-Part US7521693B2 (en) 2003-10-16 2006-11-15 Ion sources, systems and methods
US11599879 Continuation-In-Part US7554096B2 (en) 2003-10-16 2006-11-15 Ion sources, systems and methods
US11600250 Continuation-In-Part US7511279B2 (en) 2003-10-16 2006-11-15 Ion sources, systems and methods
US11600513 Continuation-In-Part US7511280B2 (en) 2003-10-16 2006-11-15 Ion sources, systems and methods
US11599915 Continuation-In-Part US7554097B2 (en) 2003-10-16 2006-11-15 Ion sources, systems and methods
US11599954 Continuation-In-Part US7557358B2 (en) 2003-10-16 2006-11-15 Ion sources, systems and methods
US11600646 Continuation-In-Part US7518122B2 (en) 2003-10-16 2006-11-15 Ion sources, systems and methods

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