US7289694B2 - Coupled segmented waveguide structures - Google Patents
Coupled segmented waveguide structures Download PDFInfo
- Publication number
- US7289694B2 US7289694B2 US11/280,854 US28085405A US7289694B2 US 7289694 B2 US7289694 B2 US 7289694B2 US 28085405 A US28085405 A US 28085405A US 7289694 B2 US7289694 B2 US 7289694B2
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- resonator
- waveguides
- waveguide
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- electrical contact
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- 230000003287 optical effect Effects 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims description 20
- 229920000642 polymer Polymers 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 8
- 239000012212 insulator Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000006096 absorbing agent Substances 0.000 claims description 2
- 230000007613 environmental effect Effects 0.000 claims description 2
- 239000012530 fluid Substances 0.000 claims description 2
- 238000011065 in-situ storage Methods 0.000 claims description 2
- 239000000990 laser dye Substances 0.000 claims description 2
- 239000004973 liquid crystal related substance Substances 0.000 claims description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 2
- 239000002096 quantum dot Substances 0.000 claims description 2
- 230000002463 transducing effect Effects 0.000 claims description 2
- 239000011149 active material Substances 0.000 claims 1
- 230000008878 coupling Effects 0.000 abstract description 3
- 238000010168 coupling process Methods 0.000 abstract description 3
- 238000005859 coupling reaction Methods 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- 238000005253 cladding Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
Definitions
- the present disclosure is directed to waveguide structures, and in particular, to segmented waveguide structures coupled to a resonator.
- the high index contrast between silicon and common cladding materials enables extremely compact waveguides with very high mode field concentrations, and allows the use of established CMOS fabrication techniques to define photonic integrated circuits. See A. S. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Hoffmanscu, M.
- Paniccia “A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor,” Nature 427, 615-618 (2004), A. Scherer, O. Painter, J. Vuckovic, M. Loncar, T. Yoshie, “Photonic crystals for confining, guiding and emitting light,” IEEE T. Nanotechnol. 1, 4-11 (2002), and A. Layadi, A. Vonsovici, R. Orobtchouk, D. Pascal, A. Koster, “Low-loss optical waveguide on standard SOI/SIMOX substrate,” Opt. Commun 146, 31-33 (1998).
- a method for establishing electrical contact to a resonator comprising: providing a segmented waveguide electrically contacting the resonator.
- a structure comprising: a resonator; and a segmented waveguide electrically contacting the resonator.
- a structure comprising a resonator, wherein the resonator is a ring resonator and comprises a slot waveguide.
- FIG. 1 shows a portion of a slot waveguide resonator coupled to an input waveguide.
- FIG. 2 shows a top view of a segmented waveguide coupled to a non-segmented waveguide.
- FIG. 3 shows a top view of a portion of a slotted ring resonator connected with segmented waveguides.
- FIG. 4 is a top view of the entire ring resonator connected with input waveguides acting as electrical contact structures.
- FIG. 5 is a diagram showing the logical layout of the circuit shown in FIGS. 3 and 4 .
- FIG. 1 shows a portion of a slot waveguide resonator 10 .
- the resonator 10 is made of silicon stripes 20 , 30 separated by a small gap 40 .
- the two silicon stripes can be formed by etching an SOI slab.
- the gap 40 can be approximately 60 nm in lateral width.
- a portion of an input waveguide 50 is also shown in FIG. 1 , to obtain electrical contact with the waveguide resonator 10 .
- the input waveguide 50 can be any type of waveguide.
- FIG. 1 shows an input slot waveguide, by way of example. For a detailed description of the operation of the structure of FIG.
- the shape of the resonator can be any kind of ring-shape including, but not limited to, circular and oval shapes. Further, the resonator can also have a shape which, although not necessarily circular, is in the same topological class as a ring. The resonator can also be a linear resonator, with the mirrors on the ends being formed by Bragg reflectors or other types of reflective structures.
- Segmented waveguides are described in detail in U.S. application Ser. No. 11/146,940, also enclosed herein by reference in its entirety.
- the ‘segmented’ portion of the waveguide is a lateral extension or ‘grating’ of the waveguide, to be used as an electrical contact.
- the extension is usually lithographically defined during the same lithographic step as the waveguide definition etch.
- FIG. 2 shows a top view of a segmented waveguide section 110 coupled to a non-segmented waveguide portion 120 .
- Segmented section 110 comprises a plurality of segments 113 on opposite sides of a central elongate waveguide portion 112 . Electrical contacts 132 are formed with the plurality of segments 113 .
- the segmented waveguide could also include a slot down the center, dividing 120 into two portions, though this is not drawn on the figure.
- FIG. 3 shows a top view of a coupling between a ring resonator like the one shown in FIG. 1 and segmented waveguides like the one shown in FIG. 2 .
- the coupling allows both sides of the slot ring resonator to be electrically contacted.
- the segments could be arranged on either or both sides of the waveguide, which could or could not incorporate a slot.
- An example of having segments on both sides of a waveguide is shown in FIG. 2 .
- FIG. 3 shows a portion of a ring resonator 150 , comprising an inner stripe or ring 160 and an outer stripe or ring 170 separated by a small gap 180 .
- waveguides 190 , 200 , 210 comprising non-segmented waveguide portions 220 , 230 , 240 and segmented waveguide portions 250 , 260 , 270 .
- the segmented waveguide portions comprise a plurality of segments or contact bars, usually having a predetermined periodicity p, i.e. distance between two adjacent segments.
- the waveguides are usually located on a substrate. In accordance with a SOI technique, the waveguides are made of silicon, while the substrate is made of silicon dioxide, SiO 2 .
- Segmented waveguide portions 250 and 270 allow contact between the waveguides 190 , 210 and the outer stripe 170 of the ring resonator.
- Segmented waveguide portion 260 allows contact between the waveguide 200 and the inner stripe 160 of the ring resonator.
- the inner ring 160 can be maintained at a first voltage, while the outer ring 170 is maintained at a second voltage, different from the first voltage.
- waveguide 200 will be at the first voltage, while waveguides 190 and 210 will be at the second voltage.
- FIG. 3 shows an embodiment where contact between input waveguide 200 and inner ring 160 is obtained by partially etching or piercing a portion of the outer ring 170 .
- the person skilled in the art will understand that alternative types of contact can be provided.
- segmented waveguides on either side of a regular or slotted waveguide.
- structures which contact either side of a waveguide from either the inside or the outside of the ring as shown in FIG. 2
- the structure shown in FIG. 3 can be enclosed in an active optical material, such as a material made of or including saturable absorbers, liquid crystals, electrooptic polymers, quantum dot doped polymers, electroluminescent polymers, other electroluminescent materials, Faraday rotator glasses, luminescent glasses, other luminescent materials, nonlinear glasses, in-situ grown semiconductor materials, organic sensor polymers, materials transducing environmental change into index of refraction change, nonlinear optical materials, laser dyes, fluids, and Chi-3 materials.
- an active optical material such as a material made of or including saturable absorbers, liquid crystals, electrooptic polymers, quantum dot doped polymers, electroluminescent polymers, other electroluminescent materials, Faraday rotator glasses, luminescent glasses, other luminescent materials, nonlinear glasses, in-situ grown semiconductor materials, organic sensor polymers, materials transducing environmental change into index of refraction change, nonlinear optical materials, laser dyes, fluids, and
- the structure of FIG. 3 can also be further integrated with radio frequency or microwave waveguides and/or be included into a high-index waveguide, due to the high index contrast between silicon and the cladding material.
- the high-index waveguide can be, for example, a silicon-on-insulator (SOI) waveguide, III-V materials waveguide, glass waveguides, polymer waveguide, and lithium niobate waveguides.
- the structures disclosed in the present application can be useful to fabricate sensors and optical elements including the waveguide devices shown in FIGS. 1-3 .
- FIG. 4 shows a top view of a complete slotted ring resonator, with contact pads connected to both sides of the ring resonator.
- the presence of input waveguides on both sides, or in other embodiments, at several points on, the ring resonator will allow the electrical properties, such as resistance, capacitance and inductance, to be manipulated without destroying the optical properties of the structure.
- FIG. 5 shows a zoomed-out view of the structure of FIGS. 3 and 4 , where contact pads 310 , 320 , 330 and 340 are shown, together with input waveguides 350 , 360 , 370 , 380 , 390 and 400 , and their respective segmented portions 410 , 420 .
- a shunt resistor 430 provides a means of confirming electrical contact with the resonator 440 .
- Typical pad-to-pad and pad-to-ring resistances range from 1 Mohm to 5 Mohm.
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Optical Integrated Circuits (AREA)
Abstract
Description
Claims (16)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/280,854 US7289694B2 (en) | 2004-11-19 | 2005-11-15 | Coupled segmented waveguide structures |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US62967504P | 2004-11-19 | 2004-11-19 | |
| US11/146,940 US7315679B2 (en) | 2004-06-07 | 2005-06-07 | Segmented waveguide structures |
| US69154805P | 2005-06-17 | 2005-06-17 | |
| US11/280,854 US7289694B2 (en) | 2004-11-19 | 2005-11-15 | Coupled segmented waveguide structures |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US11/146,940 Continuation-In-Part US7315679B2 (en) | 2004-06-07 | 2005-06-07 | Segmented waveguide structures |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| US20060133720A1 US20060133720A1 (en) | 2006-06-22 |
| US7289694B2 true US7289694B2 (en) | 2007-10-30 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US11/280,854 Expired - Fee Related US7289694B2 (en) | 2004-11-19 | 2005-11-15 | Coupled segmented waveguide structures |
Country Status (1)
| Country | Link |
|---|---|
| US (1) | US7289694B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080152279A1 (en) * | 2006-12-13 | 2008-06-26 | Ning-Ning Feng | Mode transformers for low index high confinement waveguides |
| US20230244033A1 (en) * | 2022-01-31 | 2023-08-03 | Globalfoundries U.S. Inc. | Multiple-core heterogeneous waveguide structures including multiple slots |
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|---|---|---|---|---|
| US7373058B2 (en) * | 2005-04-21 | 2008-05-13 | California Institute Of Technology | Apparatus and method for detecting optical radiation |
| US9538657B2 (en) * | 2012-06-29 | 2017-01-03 | General Electric Company | Resonant sensor and an associated sensing method |
| US10914698B2 (en) | 2006-11-16 | 2021-02-09 | General Electric Company | Sensing method and system |
| US9589686B2 (en) | 2006-11-16 | 2017-03-07 | General Electric Company | Apparatus for detecting contaminants in a liquid and a system for use thereof |
| US9658178B2 (en) | 2012-09-28 | 2017-05-23 | General Electric Company | Sensor systems for measuring an interface level in a multi-phase fluid composition |
| US9536122B2 (en) | 2014-11-04 | 2017-01-03 | General Electric Company | Disposable multivariable sensing devices having radio frequency based sensors |
| KR100907250B1 (en) * | 2007-12-10 | 2009-07-10 | 한국전자통신연구원 | Waveguide structure |
| US20090297094A1 (en) | 2008-03-05 | 2009-12-03 | University Of Washington | All-optical modulation and sdwitching with patterned optically absorbing polymers |
| US8909003B1 (en) | 2009-01-16 | 2014-12-09 | University Of Washington Through Its Center For Commercialization | Low-noise and high bandwidth electric field sensing with silicon-polymer integrated photonics and low drive voltage modulator fiber-based antenna link |
| US8818141B1 (en) | 2010-06-25 | 2014-08-26 | University Of Washington | Transmission line driven slot waveguide mach-zehnder interferometers |
| US8542023B2 (en) | 2010-11-09 | 2013-09-24 | General Electric Company | Highly selective chemical and biological sensors |
| US9689852B2 (en) * | 2012-06-29 | 2017-06-27 | General Electric Company | Resonant sensor and an associated sensing method |
| US10598650B2 (en) | 2012-08-22 | 2020-03-24 | General Electric Company | System and method for measuring an operative condition of a machine |
| WO2014031749A1 (en) | 2012-08-22 | 2014-02-27 | General Electric Company | Wireless system and method for measuring an operative condition of a machine |
| US10684268B2 (en) | 2012-09-28 | 2020-06-16 | Bl Technologies, Inc. | Sensor systems for measuring an interface level in a multi-phase fluid composition |
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|---|---|---|---|---|
| US5408492A (en) * | 1993-05-21 | 1995-04-18 | Smiths Industries Aerospace & Defense Systems, Inc. | Solid medium optical ring laser rotation sensor |
| US5459800A (en) * | 1992-07-30 | 1995-10-17 | Matsushita Electric Industrial Co., Ltd. | Optical modulation device and method of driving the same |
| US5491762A (en) * | 1994-09-09 | 1996-02-13 | Deacon Research | ATM switch with electrically-controlled waveguide-routing |
| US20020081055A1 (en) * | 1998-11-13 | 2002-06-27 | Painter Oskar J. | Resonant optical modulators |
| US20030123780A1 (en) * | 2002-01-03 | 2003-07-03 | Fischer Sylvain G. | Method of implementing the Kerr effect in an integrated ring resonator (the Kerr Integrated Optical Ring Filter) to achieve All-Optical wavelength switching, as well as all-optical tunable filtering, add-and -drop multiplexing space switching and optical intensity modulation. |
-
2005
- 2005-11-15 US US11/280,854 patent/US7289694B2/en not_active Expired - Fee Related
Patent Citations (5)
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|---|---|---|---|---|
| US5459800A (en) * | 1992-07-30 | 1995-10-17 | Matsushita Electric Industrial Co., Ltd. | Optical modulation device and method of driving the same |
| US5408492A (en) * | 1993-05-21 | 1995-04-18 | Smiths Industries Aerospace & Defense Systems, Inc. | Solid medium optical ring laser rotation sensor |
| US5491762A (en) * | 1994-09-09 | 1996-02-13 | Deacon Research | ATM switch with electrically-controlled waveguide-routing |
| US20020081055A1 (en) * | 1998-11-13 | 2002-06-27 | Painter Oskar J. | Resonant optical modulators |
| US20030123780A1 (en) * | 2002-01-03 | 2003-07-03 | Fischer Sylvain G. | Method of implementing the Kerr effect in an integrated ring resonator (the Kerr Integrated Optical Ring Filter) to achieve All-Optical wavelength switching, as well as all-optical tunable filtering, add-and -drop multiplexing space switching and optical intensity modulation. |
Non-Patent Citations (1)
| Title |
|---|
| Almeida et al., "Guiding and Confining Light in Void Nanostructure," 2004, Optics Letters, p. 1209-1211. * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080152279A1 (en) * | 2006-12-13 | 2008-06-26 | Ning-Ning Feng | Mode transformers for low index high confinement waveguides |
| US7565046B2 (en) | 2006-12-13 | 2009-07-21 | Massachusetts Institute Of Technology | Mode transformers for low index high confinement waveguides |
| US20230244033A1 (en) * | 2022-01-31 | 2023-08-03 | Globalfoundries U.S. Inc. | Multiple-core heterogeneous waveguide structures including multiple slots |
| US11835764B2 (en) * | 2022-01-31 | 2023-12-05 | Globalfoundries U.S. Inc. | Multiple-core heterogeneous waveguide structures including multiple slots |
Also Published As
| Publication number | Publication date |
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| US20060133720A1 (en) | 2006-06-22 |
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