US7259643B2 - Tunable wideband bandpass filter, tunable multi-band bandpass filter using the same, and methods therefore - Google Patents
Tunable wideband bandpass filter, tunable multi-band bandpass filter using the same, and methods therefore Download PDFInfo
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- US7259643B2 US7259643B2 US11/062,600 US6260005A US7259643B2 US 7259643 B2 US7259643 B2 US 7259643B2 US 6260005 A US6260005 A US 6260005A US 7259643 B2 US7259643 B2 US 7259643B2
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- 239000003990 capacitor Substances 0.000 claims abstract description 84
- 229910044991 metal oxide Inorganic materials 0.000 claims description 10
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- 239000004065 semiconductor Substances 0.000 claims description 10
- 230000000295 complement effect Effects 0.000 claims description 4
- 239000000463 material Substances 0.000 claims 1
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- 101100439280 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) CLB1 gene Proteins 0.000 description 12
- 238000004088 simulation Methods 0.000 description 6
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
- H03H7/0153—Electrical filters; Controlling thereof
- H03H7/0161—Bandpass filters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
- H03H7/0115—Frequency selective two-port networks comprising only inductors and capacitors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
- H03H7/17—Structural details of sub-circuits of frequency selective networks
- H03H7/1741—Comprising typical LC combinations, irrespective of presence and location of additional resistors
- H03H7/175—Series LC in series path
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
- H03H7/17—Structural details of sub-circuits of frequency selective networks
- H03H7/1741—Comprising typical LC combinations, irrespective of presence and location of additional resistors
- H03H7/1758—Series LC in shunt or branch path
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H2210/00—Indexing scheme relating to details of tunable filters
- H03H2210/01—Tuned parameter of filter characteristics
- H03H2210/012—Centre frequency; Cut-off frequency
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H2210/00—Indexing scheme relating to details of tunable filters
- H03H2210/01—Tuned parameter of filter characteristics
- H03H2210/015—Quality factor or bandwidth
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H2210/00—Indexing scheme relating to details of tunable filters
- H03H2210/02—Variable filter component
- H03H2210/025—Capacitor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
- H03J2200/00—Indexing scheme relating to tuning resonant circuits and selecting resonant circuits
- H03J2200/10—Tuning of a resonator by means of digitally controlled capacitor bank
Definitions
- the present invention relates to a frequency-tunable filter, and more particularly to digitally-controlled, small-sized, low power-consuming tunable wideband filter and tunable multi-band wideband filter using switched capacitors and inductors in use of the same, which are suitable for wideband communication systems and multi-mode communication systems.
- frequency-tunable bandpass filters with freely variable center frequencies are required in wideband communication systems, such as television (“TV”), ultra highband (“UWB”), and multi-mode communication systems, such as cellular phones, personal communication service (“PCS”), and wideband code-division multiple access (“WCDMA”).
- wideband communication systems such as television (“TV”), ultra highband (“UWB”), and multi-mode communication systems, such as cellular phones, personal communication service (“PCS”), and wideband code-division multiple access (“WCDMA”).
- TV television
- UWB ultra highband
- WCDMA wideband code-division multiple access
- FIG. 1 is a block diagram showing a communication system of a conventional RF receiver.
- an RF band signal received through an antenna is input to an RF bandpass filter 10 .
- the RF bandpass filter 10 filters the signal of the antenna to a wireless frequency band, and outputs the filtered signal to a low-noise amplifier (LNA) 20 .
- the low-noise amplifier 20 receives a signal output from the RF bandpass filter 10 , low-noise-amplifies the signal by a predetermined gain, and outputs the amplified signal to a mixer 30 .
- LNA low-noise amplifier
- the mixer 30 mixes the signal of the low-noise amplifier 20 with a sinusoidal signal generated from a local oscillator, and outputs a signal having a center frequency f IF shifted in a center frequency band.
- the signal of the mixer 30 is input to the base band modem 60 through an intermediate frequency filter 40 and an intermediate frequency/automatic gain control amplifier 50 .
- the conventional RF receiver has the RF bandpass filter 10 with fixed frequency characteristics.
- FIG. 2 illustrates a general multi-band and multi-mode receiver that switches receivers fit to a band and mode.
- the multi-band and multi-mode receiver requires additional receivers and space.
- IC integrated circuit
- LNAs wideband low noise amplifiers
- RF radio frequency
- the frequency-tunable RF bandpass filter enables a user to select a desired RF band channel.
- the frequency-tunable RF bandpass filter removes interference signals outside of the desired band and interference signals caused by neighboring channels which alleviates the linear characteristics required for an RF circuit and the phase-noise requirements of a local oscillator so that power consumption is reduced.
- the conventional frequency-tunable bandpass filter is constructed in the hybrid form using a varactor diode controlled by an analog tuning signal or a pin diode switch.
- the conventional frequency-tunable bandpass filter described above has severe non-linear characteristics, a large size, increased power consumption, and is costly.
- a frequency-tunable RF bandpass filter using only active elements is easily controlled; however, it consumes a lot of power, has a low yield, and performs worse than the passive filter in terms of linearity or noise factor. As such, the frequency-tunable bandpass filter using only active elements is difficult to apply to the wideband communication systems or multi-mode communication systems.
- An aspect of the invention provides an on-complimentary metal-oxide semiconductor (CMOS) chip, digitally-controlled, small-sized, low power-consuming tunable wideband bandpass filter and tunable multi-band wideband bandpass filter using the same.
- CMOS metal-oxide semiconductor
- a tunable wideband bandpass filter capable of varying a center frequency and bandwidth of a signal to be filtered, comprising a plurality of switched-capacitor banks (SCBs) for varying capacitance and converting the center frequency and bandwidth into a digital signal; and a plurality of inductors provided for inductance to generate the center frequency, wherein the plurality of switched-capacitor banks (SCBs) are integrated into a signal chip.
- SCBs switched-capacitor banks
- the chip is formed of complementary metal oxide semiconductor.
- the plurality of inductors are preferably integrated into the chip.
- the plurality of inductors are preferably implemented as individual elements or in a hybrid form outside of the chip.
- the switched-capacitor banks each include a plurality of switched capacitors connected in parallel, and a plurality of switching elements respectively connected in series to the plurality of switched capacitors.
- the switched-capacitor banks further include a varactor diode, respectively, connected in parallel with the plurality of switched capacitors and switching elements.
- an equivalent capacitance of the switched-capacitor banks preferably varies by turning on or off the plurality of switching elements.
- the plurality of switching elements are metal oxide semiconductor transistors.
- the plurality of switching elements are micro electro mechanical system (MEMS) switches.
- MEMS micro electro mechanical system
- a tunable multi-band wideband bandpass filter capable of varying a center frequency and bandwidth of a signal to be filtered, may include: a plurality of switched-capacitor banks for varying capacitance and converting the center frequency and bandwidth into a digital signal; a plurality of switched inductors for varying inductance and converting the center frequency and bandwidth into a digital signal; and a plurality of switches for switching the plurality of switched inductors, wherein the plurality of switched-capacitor banks and switches are integrated into a single chip, and the plurality of switched inductors are connected in parallel with the switched capacitors.
- the plurality of switched inductors are implemented as individual elements or in a hybrid form outside of the chip.
- the plurality of switched inductors are integrated into the chip.
- the chip is formed of Complementary Metal Oxide Semiconductor (CMOS).
- CMOS Complementary Metal Oxide Semiconductor
- the switched-capacitor banks each include a plurality of switched capacitors connected in parallel and a plurality of switching elements respectively connected in series to the plurality of switched capacitors.
- the switched-capacitor banks each further includes a varactor diode connected in parallel with the plurality of switched capacitors and switching elements.
- an equivalent capacitance of the switched-capacitor banks preferably varies by turning on or off the plurality of switching elements.
- the plurality of switching elements are Metal Oxide Semiconductor (MOS) transistors.
- MOS Metal Oxide Semiconductor
- the plurality of switching elements are micro electro mechanical system (MEMS) switches.
- MEMS micro electro mechanical system
- FIG. 1 is a block diagram illustrating a communication system using a conventional RF receiver
- FIG. 2 illustrates operations of a conventional multi-band and multi-mode receiver
- FIG. 3 is a block diagram illustrating a communication system having a multi-band and multi-mode receiver as a receiver using a frequency-tunable radio frequency band;
- FIG. 4 is an illustration of a tunable multi-band wideband bandpass filter according to an embodiment of the invention.
- FIG. 5 is an illustration of a tunable multi-band wideband bandpass filter according to another embodiment of the invention.
- FIG. 6 is an illustration of a tunable wideband bandpass filter according to an embodiment of the present invention.
- FIG. 7 is an illustration of an internal circuit of a switched-capacitor bank of the tunable wideband bandpass filter of FIG. 6 ;
- FIG. 8 is an illustration of a switched capacitor bank having a varactor diode according to an embodiment of the invention.
- FIG. 9 is an illustration of a simulation result for the tunable multi-band wideband bandpass filter shown in FIG. 4 ;
- FIG. 10 is an illustration of a simulation result for the tunable wideband bandpass filter shown in FIG. 6 .
- FIG. 4 is an illustration of a structure of a tunable multi-band wideband bandpass filter according to an embodiment of the invention.
- a tunable multi-band wideband bandpass filter 300 has a plurality of switched-capacitor banks (“SCB”) SCB 1 , SCB 2 , SCB 3 , and SCB 4 and a plurality of switched-inductor banks (L 1 a , L 1 b , and L 1 c ), (L 2 a , L 2 b , and L 2 c ), (L 3 a , L 3 b , and L 3 c ), and (L 4 a , L 4 b , and L 4 c ), respectively integrated on a side of a CMOS chip 100 .
- the plurality of SCBs and switched-inductor banks are provided on an upper side of the CMOS chip 100 .
- the capacitors and inductors are switched in order to improve the performance of the filter by expanding the tuning range of the filter.
- the first switched-capacitor bank SCB 1 is connected with a plurality of switched inductors L 1 a , L 1 b , and L 1 c that are connected in parallel, and the other ends of the switched inductors L 1 a , L 1 b , and L 1 c are connected in series to a switch respectively to turn the switched inductors L 1 a , L 1 b , and L 1 c on or off.
- the second, third, and fourth switched-capacitor banks SCB 2 , SCB 3 , and SCB 4 are connected to switched inductors L 2 a to L 2 c , L 3 a to L 3 c , and L 4 a to L 4 c , respectively, which are connected in parallel with one another, and the other ends of the switched inductors L 2 a to L 2 c , L 3 a to L 3 c , and L 4 a to L 4 c are connected in series to a switch, respectively.
- the tunable multi-band wideband bandpass filter switching on and off the inductors structured as above controls the equivalent capacitance of a circuit by the switched-capacitor banks SCB 1 to SCB 4 and the equivalent inductance of a circuit by turning on and off the switches of the switched inductors, to enable bandwidth extension.
- FIG. 5 is a view of the tunable multi-band wideband bandpass filter according to an embodiment of the invention.
- the inductors L 1 a to L 1 c , L 2 a to L 2 c , L 3 a to L 3 c , and L 4 a to L 4 c are preferably implemented as individual elements or in a hybrid form outside of the CMOS chip 100 .
- FIG. 6 is a view of a tunable wideband bandpass filter according to an aspect of the invention.
- the tunable wideband bandpass filter 20 has a plurality of switched-capacitor banks SCB 1 , SCB 2 , SCB 3 , and SCB 4 integrated on a side of the CMOS chip 100 and a plurality of inductors L 1 , L 2 , L 3 , and L 4 implemented outside of the CMOS chip 100 .
- the plurality of SCB's are provided on an upper side of the CMOS chip 100 .
- the inductors L 1 to L 4 are preferably integrated in the form of a spiral inductor into the CMOS chip 100 .
- the first switched-capacitor bank SCB 1 is connected in series to one end of the first inductor L 1 , and the other end of the first inductor L 1 is connected to additional inductors L 2 , L 3 , and L 4 , wherein L 1 through L 4 are connected in parallel with one another.
- the other end of the second inductor L 2 is connected in series to the second switched-capacitor bank SCB 2 , and the other end of the second switched capacitor bank SCB 2 is grounded.
- the other end of the third inductor L 3 is connected in series to the one end of the third switched-capacitor bank SCB 3 , and the other end of the third switched-capacitor bank SCB 3 is grounded.
- the other end of the fourth inductor L 4 is connected in series to the one end of the fourth switched-capacitor bank SCB 4 .
- An RF analog signal applied to the first switched-capacitor bank SCB 1 through an input terminal is tuned to a center frequency and a bandwidth, and then output throughout a low-noise amplifier through the fourth switched-capacitor bank SCB 4 .
- the present embodiment is not limited to four SCBs and four inductors.
- an RF analog signal applied to SCB 1 may be output to a low noise amplifier 20 through a fifth SCB.
- FIG. 7 is a view of the internal circuit of the switched-capacitor banks SCB 1 to SCB 4 according to an embodiment of the invention.
- the switched-capacitor banks SCB 1 through SCB 4 each have n switched capacitor C 1 , C 2 , . . . , and Cn, with one end of each switched capacitor being connected in parallel with the input terminal, and with the other end of each switched capacitor being is connected in series to n transistors Q 1 , Q 2 , . . . , and Qn.
- the transistors Q 1 to Qn may include metal oxide semiconductor (MOS) transistors and micro electro mechanical system (MEMS) switch elements.
- MOS metal oxide semiconductor
- MEMS micro electro mechanical system
- the gate of each transistor is applied with a digital control signal Si consisting of bits, and the transistor properly controls the digital control signal Si, in order to convert the capacitance of the switched capacitors C 1 to Cn into a digital signal.
- the entire capacitance of the tunable wideband bandpass filter 200 is controlled.
- Equation 1 shows the relationship among capacitance, inductance, and a center frequency, according to an embodiment of the invention:
- Equation 1 fr denotes the center frequency
- L is an equivalent inductance of the tunable wideband bandpass filter
- C is an equivalent capacitance of the tunable wideband bandpass filter.
- the center frequency of the signal applied to the tunable wideband bandpass filter and the signal bandwidth can be adjusted.
- FIG. 8 illustrates an embodiment of the present invention having a switched-capacitor bank SCB with a varactor diode.
- the varactor diode is connected in parallel with a plurality of switched capacitors Csw 1 , Csw 2 , . . . , and Cswn and a plurality of transistors Q 1 , Q 2 , . . . , and Qn.
- the plurality of transistors are MEMS switch elements.
- the addition of the varactor diode enables the equivalent capacitance of the respective switched-capacitor banks SCB 1 to SCB 4 to be more precisely controlled.
- the varactor diode enables fine frequency tuning to be achieved.
- the transistors are turned on or off when digital control signal voltages are set lower or higher than a predetermined threshold voltage of the transistors, which enables the entire capacitance of the respective switched-capacitor banks SCB 1 to SCB 4 to be adjusted.
- the capacitance of the respective switched-capacitor banks SCB 1 to SCB 4 is adjusted as described above, the center frequency and bandwidth of an RF analog signal applied to the filter can be adjusted.
- FIG. 9 illustrates a simulation for the tunable multi-band wideband bandpass filter shown in FIG. 4 .
- the values of the switched inductors are set in order for three bands to have center frequencies between 50 MHz and 110 MHz, 110 MHz and 500 MHz, and 500 MHz and 900 MHz, respectively.
- the tunable multi-band wideband bandpass filter varies its band range from 50 MHz to 900 MHz as shown in the simulation result.
- FIG. 10 illustrates a simulation result for the tunable wideband bandpass filter shown in FIG. 6 .
- the tunable wideband bandpass filter varies its center frequency from 50 MHz to 900 MHz as shown in the simulation result.
- the invention can implement a digitally controlled, small-sized, low power-consumed, and manufacturing cost-lowered tunable wideband bandpass filter.
- the invention improves the performance of a tunable multi-band wideband bandpass filter since the bandwidth of the filter can be widened.
Abstract
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KR1020040011670A KR100548130B1 (en) | 2004-02-21 | 2004-02-21 | The wideband tunable bandpass filter and multi-band wideband tunable bandpass filter using it |
KR2004-11670 | 2004-02-21 |
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Also Published As
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KR100548130B1 (en) | 2006-02-02 |
US20050184828A1 (en) | 2005-08-25 |
KR20050083251A (en) | 2005-08-26 |
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