US6585907B2 - Method for manufacturing a shield for an inductively-couple plasma apparatus - Google Patents

Method for manufacturing a shield for an inductively-couple plasma apparatus Download PDF

Info

Publication number
US6585907B2
US6585907B2 US09/839,162 US83916201A US6585907B2 US 6585907 B2 US6585907 B2 US 6585907B2 US 83916201 A US83916201 A US 83916201A US 6585907 B2 US6585907 B2 US 6585907B2
Authority
US
United States
Prior art keywords
shield
coil
dielectric window
portions
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related, expires
Application number
US09/839,162
Other versions
US20010022157A1 (en
Inventor
Eun-hee Shin
Jin-Man Kim
Baik-soon Choi
Hun Cha
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intellectual Discovery Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Priority to US09/839,162 priority Critical patent/US6585907B2/en
Publication of US20010022157A1 publication Critical patent/US20010022157A1/en
Application granted granted Critical
Publication of US6585907B2 publication Critical patent/US6585907B2/en
Assigned to INTELLECTUAL DISCOVERY CO., LTD. reassignment INTELLECTUAL DISCOVERY CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SAMSUNG ELECTRONICS CO., LTD.
Adjusted expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma

Definitions

  • the present invention relates to the field of semiconductor device manufacturing and, more particularly to an inductive-coupled plasma apparatus employing a capacitive shield to reduce sputter contamination and a method for manufacturing the shield.
  • the uniform and rapid processing of materials using induction generated, plasma-based processes is important in the fields of semiconductor device manufacturing, packaging, optics, and the like.
  • Many plasma processes are extensively used for the depositing or reactive etching of layers during semiconductor device fabrication.
  • a radio frequency (RF at about 13.56 MHz) induction plasma source is known to produce high electron density plasma, thus providing high processing rates.
  • a semiconductor substrate is disposed within an evacuated chamber coupled to a source of plasma.
  • the plasma is coupled to the substrate for ion bombarding the substrate, for etching patterns in the substrate, or for depositing ions on the substrate to grow layers of selected materials thereon.
  • the conventional inductive-coupled plasma apparatus 10 includes a process chamber 20 and a RF housing 40 which is often called a match box.
  • the process chamber 20 includes a supporter 22 for supporting at least one semiconductor wafer 28 , an edge ring 24 surrounding the supporter 22 and a gas injection ring 26 for injecting gas into the process chamber 20 .
  • the process chamber 20 further includes a pump 30 for controlling a pressure of an inner space of the process chamber 20 .
  • a spiral coil 44 shown in FIG. 2 is coupled to the RF housing 40 . Power is supplied from RF power supply line 48 to the spiral coil 44 .
  • the spiral coil 44 is supported by a coil holder 46 , which is fixed to the RF housing 40 through a rod 80 .
  • the spiral coil 44 is separated from the plasma by a planar dielectric window 42 .
  • a technique is thus desired for maintaining high inductive coupling between the coil and the plasma, so that improved processing rates and reduction of sputtered contaminates from the dielectric window may be realized.
  • the present invention is therefore directed to an inductive coupled plasma apparatus which substantially overcomes one or more of the problems due to the limitations and disadvantages of the related art.
  • the present invention is directed to an apparatus for enhanced inductive coupling to plasma with reduced sputter contamination.
  • the present invention eliminates sputtering of the dielectric window generated by high potentials on the adjacent spiral-like or helical coil by adding a shield between the dielectric window and the coil.
  • the shields of the present invention are designed so that they do not interfere with the inductive coupling of the coil to the plasma, but interfere with the capacitive electric fields generated by the coil.
  • a primary advantage of the shield of the present invention is the reduction or elimination of sputtered contaminants from the dielectric vacuum window.
  • an apparatus for generating a high-density plasma which includes a process chamber having a dielectric window located along a plane, a coil located outside the process chamber proximate the dielectric window and substantially parallel to the plane and a capacitive shield located between the coil and the dielectric window, wherein the shield has multiple openings, and wherein the multiple openings of the shield are disposed at locations corresponding to areas between the coil.
  • the coil may be spiral-shaped and the dielectric window and the shield may be substantially flat, and each of the multiple openings of the shield may be concentric-shaped.
  • the shield may further include a portion extending outwardly and the apparatus may further include a shield holder for supporting the shield by coupling the portion extending outwardly.
  • the coil may be helical-shaped, the dielectric window and the shield may be disposed concentrically within the coil, and the shield may have a number of helically extending and circumferentially spaced openings.
  • the shield may be made of an aluminum metal or a copper metal, and a surface of the shield may be coated with a silver.
  • a method of manufacturing a shield of an apparatus for generating a high-density plasma using a coil and having a dielectric window including carrying out an etching process using the plasma, examining a characteristic pattern of etched portions of the surface of the dielectric window, designating first portions to be etched and second portions to be deposited, manufacturing the shield having a first portion corresponding to first portions of the dielectric window and a second portion to be opened corresponding to second portions of the dielectric window, and disposing the second portion of the shield at locations corresponding to areas between the coil.
  • FIG. 1 is a sectional view showing a conventional inductive-coupled plasma apparatus for etching
  • FIG. 2 is a plane view showing a spiral coil of the inductive-coupled plasma apparatus shown in FIG. 1;
  • FIG. 3 is a view showing a surface of a dielectric window of the inductive-coupled plasma apparatus shown in FIG. 1 after an etching process;
  • FIG. 4 is a diagram showing patterns copied from a characteristic of the surface of the dielectric window shown in FIG. 3;
  • FIG. 5 is a flowchart showing a method of manufacturing a shield of the present invention.
  • FIG. 6 is a plane view showing a shield according to a preferred embodiment of the present invention.
  • FIG. 7 is an exploded perspective view showing a coil unit of an inductive-coupled plasma apparatus according to a preferred embodiment of the present invention.
  • FIG. 8 is a sectional view showing an inductive-coupled plasma apparatus including the shield according to a preferred embodiment of the present invention.
  • FIG. 9 is an exploded perspective view showing a shield used in a helical coil according to another preferred embodiment of the present invention.
  • a characteristic etching pattern shown in FIG. 3 and FIG. 4 indicates the fact that the etched portions of the surface of the dielectric window coincide with a configuration of the spiral coil.
  • portions indicated by numerals 1 , 3 , 4 and 6 are etched portions and portions indicated by numerals 2 and 5 are portions deposited with particles. According to the etched pattern, the etched portions are all disposed underneath the coil.
  • the high potentials on the coil cause some degree of capacitive coupling, particularly in the vertical direction of the coil (or in an orthogonal direction between the coil and the dielectric window).
  • This capacitive coupling collects ions, which results in etching at the particular regions of the dielectric window disposed underneath the coil. Therefore, some particular regions of the dielectric window disposed underneath the coil are etched more excessively than other regions.
  • the shield of a preferred embodiment of the present invention as illustrated in FIG. 6 includes two regions.
  • the first regions indicated by 62 - 1 , 62 - 2 , 62 - 3 and 62 - 4 corresponding to the coil are not opened and the second regions 64 - 1 , 64 - 2 , 64 - 3 and 64 - 4 corresponding to areas disposed between the turns of coil are open.
  • the first regions 62 - 1 , 62 - 2 , 62 - 3 and 62 - 4 are disposed underneath the coil and are added between the coil and the dielectric window to protect the surface of the dielectric window against capacitive coupling in the vertical direction.
  • the second regions 64 - 1 , 64 - 2 , 64 - 3 and 64 - 4 are disposed at locations corresponding to areas between the turns of the coil and are arcuate-split or concentric split shaped.
  • the shield is manufactured by the following steps according to FIG. 5 .
  • the etching process is carried out using the plasma, and in the next step S 510 , a characteristic pattern of etched portions on the surface of the dielectric window is examined.
  • first portions of the dielectric window that are etched and second portions that are deposited are designated, and in the next step S 530 , the shield having a first portion corresponding to the first portions of the dielectric window and a second portion to be opened corresponding to the second portions of the dielectric window is manufactured.
  • the shield is disposed so that the second portion is disposed at locations corresponding to areas between the coils.
  • Shield 60 of a preferred embodiment of the present invention is added between the coil 44 and the dielectric window 42 shown in FIG. 8 .
  • the coil 44 is supplied with power by RF power supply source 48 .
  • a coil holder 46 holds the coil 44 .
  • the shield 60 is fixed to at least one shield holder 70 .
  • the shield holder 70 includes a slit 72 to contain an extending portion 66 of the shield 60 and a screw hole 74 for coupling a screw 76 .
  • a central portion 51 of coil 44 is open.
  • a first portion 50 , 52 of the coil 44 is disposed corresponding to a first cover portion 62 - 1 of the shield 60
  • a second portion 54 is disposed corresponding to a second cover portion 62 - 2 of the shield 60
  • a third portion 56 of the coil 44 is located corresponding to a third cover portion 62 - 3
  • a fourth portion 58 of the coil 44 is located corresponding to a fourth cover portion 62 - 4 .
  • portions of the shield 60 corresponding to locations underneath the coil are portions having no hole or slit, but portions of the shield corresponding to locations underneath gaps between the turns of coils are portions that are opened, or for example having slits or holes. Portions having no hole protect the dielectric window against capacitive coupling. Thus, particular portions of the dielectric window corresponding to locations underneath the coil are not excessively etched.
  • an inductive-coupled plasma apparatus including a shield having multiple slits is illustrated.
  • the shield 60 is added between the coil 44 supported by the coil holder 46 and the dielectric window 42 .
  • the shield 60 is supported by the shield holder 70 .
  • the extending portion 66 of the shield 60 is inserted.
  • FIG. 9 A shield according to another preferred embodiment of the present invention is illustrated in FIG. 9 .
  • the apparatus shown in FIG. 9 includes a helical coil 86 , a shield 84 disposed concentrically within the coil 86 , and an internal tube 82 of a low loss dielectric insulating material, e.g., of quartz.
  • a lower end of the coil 86 is electrically connected to the shield 84 by a screw 90 .
  • the shield 84 can be mounted on the internal tube 82 or coupled to the inner wall of a process chamber by a coupling mechanism.
  • the coupling mechanism includes a support member 110 and an extending member 100 of the shield 84 .
  • the support member 110 may be coupled to an extending member 100 with a screw 120 .
  • the support member 110 can be connected with the process chamber.
  • the shield 84 is provided with a number of helically extending and circumferentially spaced slits 88 .
  • the shape of the slits 88 correspond to the shape of the helical coil 86 .
  • the shield may be made of an aluminum metal, or a copper metal which has a good conductive property. Also, the surface of the shield can be coated with a silver, which increases conductivity and prevents corrosion.
  • the thickness of the shield may preferrably be between 0.5 mm and 2.0 mm.
  • a shield of the present invention it is possible to prevent etching on the surface of the dielectric window at locations corresponding to areas underneath coils. This prevention reduces contamination of the semiconductor wafer and improves the yield of the semiconductor process.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

An inductive-coupled plasma apparatus employs a shield to reduce sputter contamination. A method for manufacturing the shield is included. An apparatus for generating a high-density plasma includes a process chamber having a dielectric window located along a plane, a coil located outside the process chamber proximate to the dielectric window and substantially parallel to the plane, and a shield located between the coil and the dielectric window. The shield has multiple openings, wherein the multiple openings of the shield are disposed at locations corresponding to areas between the turns of the coil.

Description

CROSS REFERENCE TO RELATED APPLICATIONS
This is a divisional application of application Ser. No. 09/546,557 filed Apr. 10, 2000, now U.S. Pat. No. 6,251,241, which is hereby incorporated by reference in its entirety for all purposes.
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to the field of semiconductor device manufacturing and, more particularly to an inductive-coupled plasma apparatus employing a capacitive shield to reduce sputter contamination and a method for manufacturing the shield.
2. Description of the Background Art
The uniform and rapid processing of materials using induction generated, plasma-based processes (also referred to as inductive-coupled plasma processes) is important in the fields of semiconductor device manufacturing, packaging, optics, and the like. Many plasma processes are extensively used for the depositing or reactive etching of layers during semiconductor device fabrication. Especially, a radio frequency (RF at about 13.56 MHz) induction plasma source is known to produce high electron density plasma, thus providing high processing rates.
For example, a semiconductor substrate is disposed within an evacuated chamber coupled to a source of plasma. By appropriately biasing the substrate, the plasma is coupled to the substrate for ion bombarding the substrate, for etching patterns in the substrate, or for depositing ions on the substrate to grow layers of selected materials thereon.
Hereinafter a conventional inductive-coupled plasma apparatus shown in FIG. 1 and FIG. 2 is explained in detail. The conventional inductive-coupled plasma apparatus 10 includes a process chamber 20 and a RF housing 40 which is often called a match box. The process chamber 20 includes a supporter 22 for supporting at least one semiconductor wafer 28, an edge ring 24 surrounding the supporter 22 and a gas injection ring 26 for injecting gas into the process chamber 20. Also the process chamber 20 further includes a pump 30 for controlling a pressure of an inner space of the process chamber 20.
A spiral coil 44 shown in FIG. 2 is coupled to the RF housing 40. Power is supplied from RF power supply line 48 to the spiral coil 44. The spiral coil 44 is supported by a coil holder 46, which is fixed to the RF housing 40 through a rod 80. The spiral coil 44 is separated from the plasma by a planar dielectric window 42.
However, in this conventional apparatus, high potentials on the coil cause some degree of capacitive coupling. Therefore, some particular regions, especially regions located underneath the coil on the surface of the planar dielectric window, are etched more excessively than other regions. Thus the etching process is contaminated due to falling particles from the etched regions of the planar dielectric window.
A technique is thus desired for maintaining high inductive coupling between the coil and the plasma, so that improved processing rates and reduction of sputtered contaminates from the dielectric window may be realized.
SUMMARY OF THE INVENTION
The present invention is therefore directed to an inductive coupled plasma apparatus which substantially overcomes one or more of the problems due to the limitations and disadvantages of the related art.
It is therefore an object of the present invention to provide an apparatus for maintaining high inductive coupling and reducing sputtered contaminates from the dielectric window.
The present invention is directed to an apparatus for enhanced inductive coupling to plasma with reduced sputter contamination. The present invention eliminates sputtering of the dielectric window generated by high potentials on the adjacent spiral-like or helical coil by adding a shield between the dielectric window and the coil.
The shields of the present invention are designed so that they do not interfere with the inductive coupling of the coil to the plasma, but interfere with the capacitive electric fields generated by the coil.
A primary advantage of the shield of the present invention is the reduction or elimination of sputtered contaminants from the dielectric vacuum window.
In order to attain the above objects, according to an aspect of the present invention, there is provided an apparatus for generating a high-density plasma, which includes a process chamber having a dielectric window located along a plane, a coil located outside the process chamber proximate the dielectric window and substantially parallel to the plane and a capacitive shield located between the coil and the dielectric window, wherein the shield has multiple openings, and wherein the multiple openings of the shield are disposed at locations corresponding to areas between the coil.
In the apparatus according to the invention, the coil may be spiral-shaped and the dielectric window and the shield may be substantially flat, and each of the multiple openings of the shield may be concentric-shaped.
Furthermore, the shield may further include a portion extending outwardly and the apparatus may further include a shield holder for supporting the shield by coupling the portion extending outwardly.
Still further, in the apparatus, the coil may be helical-shaped, the dielectric window and the shield may be disposed concentrically within the coil, and the shield may have a number of helically extending and circumferentially spaced openings.
Still further, in the apparatus, the shield may be made of an aluminum metal or a copper metal, and a surface of the shield may be coated with a silver.
According to another aspect of this invention, there is provided a method of manufacturing a shield of an apparatus for generating a high-density plasma using a coil and having a dielectric window, the method including carrying out an etching process using the plasma, examining a characteristic pattern of etched portions of the surface of the dielectric window, designating first portions to be etched and second portions to be deposited, manufacturing the shield having a first portion corresponding to first portions of the dielectric window and a second portion to be opened corresponding to second portions of the dielectric window, and disposing the second portion of the shield at locations corresponding to areas between the coil.
Further scope of applicability of the present invention will become apparent from the detailed description given hereinafter. However, it should be understood that the detailed description and specific examples, while indicating preferred embodiments of the invention, are given by way of illustration only, since various changes and modifications within the spirit and scope of the invention will become apparent to those skilled in the art from this detailed description.
BRIEF DESCRIPTION OF THE DRAWINGS
A more complete appreciation of the present invention, and many of the attendant advantages thereof, will become readily apparent as the same becomes better understood by reference to the following detailed description when considered in conjunction with the accompanying drawings, which are given by way of illustration only and thus are not limitative of the present invention, and in which like reference symbols indicate the same or similar components, wherein:
FIG. 1 is a sectional view showing a conventional inductive-coupled plasma apparatus for etching;
FIG. 2 is a plane view showing a spiral coil of the inductive-coupled plasma apparatus shown in FIG. 1;
FIG. 3 is a view showing a surface of a dielectric window of the inductive-coupled plasma apparatus shown in FIG. 1 after an etching process;
FIG. 4 is a diagram showing patterns copied from a characteristic of the surface of the dielectric window shown in FIG. 3;
FIG. 5 is a flowchart showing a method of manufacturing a shield of the present invention;
FIG. 6 is a plane view showing a shield according to a preferred embodiment of the present invention;
FIG. 7 is an exploded perspective view showing a coil unit of an inductive-coupled plasma apparatus according to a preferred embodiment of the present invention;
FIG. 8 is a sectional view showing an inductive-coupled plasma apparatus including the shield according to a preferred embodiment of the present invention; and
FIG. 9 is an exploded perspective view showing a shield used in a helical coil according to another preferred embodiment of the present invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
It should be understood that the description of this preferred embodiment is merely illustrative and that it should not be taken in a limiting sense. In the following detailed description, several specific details are set forth in order to provide a thorough understanding of the present invention. It will be obvious, however, to one skilled in the art that the present invention may be practiced without these specific details.
With reference to FIG. 3 through FIG. 8, one preferred embodiment of a inductive-coupled plasma apparatus according to the invention is described.
A characteristic etching pattern shown in FIG. 3 and FIG. 4 indicates the fact that the etched portions of the surface of the dielectric window coincide with a configuration of the spiral coil. To explain the above mentioned fact in detail according to FIG. 4, portions indicated by numerals 1, 3, 4 and 6 are etched portions and portions indicated by numerals 2 and 5 are portions deposited with particles. According to the etched pattern, the etched portions are all disposed underneath the coil.
The high potentials on the coil cause some degree of capacitive coupling, particularly in the vertical direction of the coil (or in an orthogonal direction between the coil and the dielectric window). This capacitive coupling collects ions, which results in etching at the particular regions of the dielectric window disposed underneath the coil. Therefore, some particular regions of the dielectric window disposed underneath the coil are etched more excessively than other regions.
Therefore, the shield of a preferred embodiment of the present invention as illustrated in FIG. 6 includes two regions. The first regions indicated by 62-1, 62-2, 62-3 and 62-4 corresponding to the coil are not opened and the second regions 64-1, 64-2, 64-3 and 64-4 corresponding to areas disposed between the turns of coil are open. The first regions 62-1, 62-2, 62-3 and 62-4 are disposed underneath the coil and are added between the coil and the dielectric window to protect the surface of the dielectric window against capacitive coupling in the vertical direction. The second regions 64-1, 64-2, 64-3 and 64-4 are disposed at locations corresponding to areas between the turns of the coil and are arcuate-split or concentric split shaped.
In the present invention, the shield is manufactured by the following steps according to FIG. 5. At first step S500, the etching process is carried out using the plasma, and in the next step S510, a characteristic pattern of etched portions on the surface of the dielectric window is examined. In the next step S520, first portions of the dielectric window that are etched and second portions that are deposited are designated, and in the next step S530, the shield having a first portion corresponding to the first portions of the dielectric window and a second portion to be opened corresponding to the second portions of the dielectric window is manufactured. And in final step S540, the shield is disposed so that the second portion is disposed at locations corresponding to areas between the coils.
However, it is to be understood that the shape of the slits of the shield according to the present invention is not limited to the disclosed preferred embodiments. On the contrary, it is intended to cover various modifications and similar arrangements.
With reference to FIGS. 7-9, shields of preferred embodiments of the present invention are described.
Shield 60 of a preferred embodiment of the present invention is added between the coil 44 and the dielectric window 42 shown in FIG. 8. The coil 44 is supplied with power by RF power supply source 48. A coil holder 46 holds the coil 44.
The shield 60 is fixed to at least one shield holder 70. The shield holder 70 includes a slit 72 to contain an extending portion 66 of the shield 60 and a screw hole 74 for coupling a screw 76.
In a preferred embodiment of the present invention, as most clearly seen in FIG. 7, a central portion 51 of coil 44 is open. A first portion 50, 52 of the coil 44 is disposed corresponding to a first cover portion 62-1 of the shield 60, a second portion 54 is disposed corresponding to a second cover portion 62-2 of the shield 60, a third portion 56 of the coil 44 is located corresponding to a third cover portion 62-3 and a fourth portion 58 of the coil 44 is located corresponding to a fourth cover portion 62-4.
As described above, portions of the shield 60 corresponding to locations underneath the coil are portions having no hole or slit, but portions of the shield corresponding to locations underneath gaps between the turns of coils are portions that are opened, or for example having slits or holes. Portions having no hole protect the dielectric window against capacitive coupling. Thus, particular portions of the dielectric window corresponding to locations underneath the coil are not excessively etched.
Referring to FIG. 8, an inductive-coupled plasma apparatus including a shield having multiple slits is illustrated.
The shield 60 is added between the coil 44 supported by the coil holder 46 and the dielectric window 42. The shield 60 is supported by the shield holder 70. In the slit 72 of the shield holder 70, the extending portion 66 of the shield 60 is inserted.
A shield according to another preferred embodiment of the present invention is illustrated in FIG. 9. The apparatus shown in FIG. 9 includes a helical coil 86, a shield 84 disposed concentrically within the coil 86, and an internal tube 82 of a low loss dielectric insulating material, e.g., of quartz.
A lower end of the coil 86 is electrically connected to the shield 84 by a screw 90. The shield 84 can be mounted on the internal tube 82 or coupled to the inner wall of a process chamber by a coupling mechanism. The coupling mechanism includes a support member 110 and an extending member 100 of the shield 84. The support member 110 may be coupled to an extending member 100 with a screw 120. The support member 110 can be connected with the process chamber.
The shield 84 is provided with a number of helically extending and circumferentially spaced slits 88. The shape of the slits 88 correspond to the shape of the helical coil 86.
In the present invention, the shield may be made of an aluminum metal, or a copper metal which has a good conductive property. Also, the surface of the shield can be coated with a silver, which increases conductivity and prevents corrosion.
In a preferred embodiment of the present invention, the thickness of the shield may preferrably be between 0.5 mm and 2.0 mm.
According to a shield of the present invention, it is possible to prevent etching on the surface of the dielectric window at locations corresponding to areas underneath coils. This prevention reduces contamination of the semiconductor wafer and improves the yield of the semiconductor process.
Further, it is possible to prolong the average span of the dielectric window, which results in production cost savings.
The invention has been described using exemplary embodiments. However, it is to be understood that the scope of the invention is not limited to the disclosed preferred embodiments. On the contrary, it is intended to cover various modifications and similar arrangements. Such modifications are not to be regarded as a departure from the spirit and scope of the invention, and all such modifications as would be obvious to one skilled in the art are intended to be included within the scope of the following claims.

Claims (1)

What is claimed is:
1. A method of manufacturing a shield of an apparatus for generating a high-density plasma using a coil having a plurality of turns and a dielectric window, comprising:
performing an etching process using the plasma;
examining a characteristic pattern of etched portions of a surface of the dielectric window;
designating first portions of the dielectric window that are etched and second portions that are deposited;
manufacturing the shield having a first portion corresponding to first portions of the dielectric window and a second portion that is opened corresponding to second portions of the dielectric window; and
disposing the second portion of the shield at locations corresponding to areas between adjacent turns of the plurality of turns of the coil.
US09/839,162 1999-04-09 2001-04-23 Method for manufacturing a shield for an inductively-couple plasma apparatus Expired - Fee Related US6585907B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US09/839,162 US6585907B2 (en) 1999-04-09 2001-04-23 Method for manufacturing a shield for an inductively-couple plasma apparatus

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR99-12530 1999-04-09
KR1019990012530A KR100291898B1 (en) 1999-04-09 1999-04-09 Method of making shield and plasma etching apparatus for enhanced inductive coupling to plasmas with reduced sputter contamination
US09/546,557 US6251241B1 (en) 1999-04-09 2000-04-10 Inductive-coupled plasma apparatus employing shield and method for manufacturing the shield
US09/839,162 US6585907B2 (en) 1999-04-09 2001-04-23 Method for manufacturing a shield for an inductively-couple plasma apparatus

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US09/546,557 Division US6251241B1 (en) 1999-04-09 2000-04-10 Inductive-coupled plasma apparatus employing shield and method for manufacturing the shield

Publications (2)

Publication Number Publication Date
US20010022157A1 US20010022157A1 (en) 2001-09-20
US6585907B2 true US6585907B2 (en) 2003-07-01

Family

ID=19579248

Family Applications (2)

Application Number Title Priority Date Filing Date
US09/546,557 Expired - Fee Related US6251241B1 (en) 1999-04-09 2000-04-10 Inductive-coupled plasma apparatus employing shield and method for manufacturing the shield
US09/839,162 Expired - Fee Related US6585907B2 (en) 1999-04-09 2001-04-23 Method for manufacturing a shield for an inductively-couple plasma apparatus

Family Applications Before (1)

Application Number Title Priority Date Filing Date
US09/546,557 Expired - Fee Related US6251241B1 (en) 1999-04-09 2000-04-10 Inductive-coupled plasma apparatus employing shield and method for manufacturing the shield

Country Status (4)

Country Link
US (2) US6251241B1 (en)
JP (1) JP3872255B2 (en)
KR (1) KR100291898B1 (en)
TW (1) TW449805B (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100291898B1 (en) * 1999-04-09 2001-06-01 윤종용 Method of making shield and plasma etching apparatus for enhanced inductive coupling to plasmas with reduced sputter contamination
US6531029B1 (en) * 2000-06-30 2003-03-11 Lam Research Corporation Vacuum plasma processor apparatus and method
KR100481313B1 (en) * 2001-11-09 2005-04-07 최대규 Inductively coupled plasma source
KR101001743B1 (en) * 2003-11-17 2010-12-15 삼성전자주식회사 Ionized physical vapor deposition apparatus using helical self-resonant coil
US7273533B2 (en) * 2003-11-19 2007-09-25 Tokyo Electron Limited Plasma processing system with locally-efficient inductive plasma coupling
KR100599092B1 (en) * 2004-11-29 2006-07-12 삼성전자주식회사 Electro-magnatic accelerator with driving frequency modulation
US7591935B2 (en) * 2005-12-14 2009-09-22 Tokyo Electron Limited Enhanced reliability deposition baffle for iPVD
US7685965B1 (en) * 2006-01-26 2010-03-30 Lam Research Corporation Apparatus for shielding process chamber port
US8062472B2 (en) * 2007-12-19 2011-11-22 Applied Materials, Inc. Method of correcting baseline skew by a novel motorized source coil assembly
US20090162570A1 (en) * 2007-12-19 2009-06-25 Applied Materials, Inc. Apparatus and method for processing a substrate using inductively coupled plasma technology
US8414736B2 (en) * 2009-09-03 2013-04-09 Applied Materials, Inc. Plasma reactor with tiltable overhead RF inductive source
WO2016149515A1 (en) * 2015-03-19 2016-09-22 Mattson Technology, Inc. Controlling azimuthal uniformity of etch process in plasma processing chamber
US11521828B2 (en) * 2017-10-09 2022-12-06 Applied Materials, Inc. Inductively coupled plasma source
WO2019180889A1 (en) * 2018-03-22 2019-09-26 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ Substrate treating device, semiconductor device manufacturing method, and electrostatic shield
JP7190566B2 (en) * 2018-10-30 2022-12-15 北京北方華創微電子装備有限公司 Induction coil assembly and reaction chamber
US11056321B2 (en) * 2019-01-03 2021-07-06 Lam Research Corporation Metal contamination reduction in substrate processing systems with transformer coupled plasma

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5234529A (en) 1991-10-10 1993-08-10 Johnson Wayne L Plasma generating apparatus employing capacitive shielding and process for using such apparatus
EP0607797A1 (en) 1993-01-19 1994-07-27 International Business Machines Corporation An apparatus and method for enhanced inductive coupling to plasmas with reduced sputter contamination
US5800688A (en) 1997-04-21 1998-09-01 Tokyo Electron Limited Apparatus for ionized sputtering
US6123802A (en) * 1997-09-23 2000-09-26 Micron Technology, Inc. Method and apparatus for preventing plasma formation
US6251241B1 (en) * 1999-04-09 2001-06-26 Samsung Electronics Co., Ltd. Inductive-coupled plasma apparatus employing shield and method for manufacturing the shield

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5234529A (en) 1991-10-10 1993-08-10 Johnson Wayne L Plasma generating apparatus employing capacitive shielding and process for using such apparatus
EP0607797A1 (en) 1993-01-19 1994-07-27 International Business Machines Corporation An apparatus and method for enhanced inductive coupling to plasmas with reduced sputter contamination
US5800688A (en) 1997-04-21 1998-09-01 Tokyo Electron Limited Apparatus for ionized sputtering
US6123802A (en) * 1997-09-23 2000-09-26 Micron Technology, Inc. Method and apparatus for preventing plasma formation
US6251241B1 (en) * 1999-04-09 2001-06-26 Samsung Electronics Co., Ltd. Inductive-coupled plasma apparatus employing shield and method for manufacturing the shield

Also Published As

Publication number Publication date
KR20000065830A (en) 2000-11-15
JP3872255B2 (en) 2007-01-24
JP2000342958A (en) 2000-12-12
US20010022157A1 (en) 2001-09-20
TW449805B (en) 2001-08-11
US6251241B1 (en) 2001-06-26
KR100291898B1 (en) 2001-06-01

Similar Documents

Publication Publication Date Title
US6585907B2 (en) Method for manufacturing a shield for an inductively-couple plasma apparatus
US5903106A (en) Plasma generating apparatus having an electrostatic shield
US6237526B1 (en) Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma
US6494998B1 (en) Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma using an internal inductive element
KR100349426B1 (en) Inductively Coupled Plasma Sputter Chamber with Conductive Material Sputtering Capabilities
US5433812A (en) Apparatus for enhanced inductive coupling to plasmas with reduced sputter contamination
US6027603A (en) Inductively coupled planar source for substantially uniform plasma flux
US6554953B2 (en) Thin film electrostatic shield for inductive plasma processing
US6679981B1 (en) Inductive plasma loop enhancing magnetron sputtering
US5767628A (en) Helicon plasma processing tool utilizing a ferromagnetic induction coil with an internal cooling channel
US6474258B2 (en) Apparatus and method for improving plasma distribution and performance in an inductively coupled plasma
KR101480738B1 (en) Annular baffle
KR19990072649A (en) High-frequency discharge method and device thereof and high-frequency processing device
JPH10183342A (en) Active shield for generating plasma for sputtering
JP2008503868A (en) Internal antenna for plasma processing with metal plasma
CA2207154A1 (en) Inductively coupled source for deriving substantially uniform plasma flux
JP2002520492A (en) Feedthrough overlapping coil
KR20000057263A (en) Method and apparatus for producing a uniform density plasma above a substrate
KR20010041917A (en) Sputtering apparatus with a coil having overlapping ends
KR100489917B1 (en) A standoff for supporting a coil to generate a plasma and a method for supporting the coil
KR100341524B1 (en) Central coil design for ionized metal plasma deposition
KR20020093841A (en) Inductively Coupled Plasma Etching Apparatus
US7088046B2 (en) Integrated process tube and electrostatic shield, assembly thereof and manufacture thereof

Legal Events

Date Code Title Description
FEPP Fee payment procedure

Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

FPAY Fee payment

Year of fee payment: 4

FPAY Fee payment

Year of fee payment: 8

AS Assignment

Owner name: INTELLECTUAL DISCOVERY CO., LTD., KOREA, REPUBLIC

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:SAMSUNG ELECTRONICS CO., LTD.;REEL/FRAME:034151/0504

Effective date: 20140205

REMI Maintenance fee reminder mailed
LAPS Lapse for failure to pay maintenance fees
STCH Information on status: patent discontinuation

Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362

FP Lapsed due to failure to pay maintenance fee

Effective date: 20150701