US6192318B1 - Apparatus and method for automatically matching microwave impedance - Google Patents
Apparatus and method for automatically matching microwave impedance Download PDFInfo
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- US6192318B1 US6192318B1 US09/330,216 US33021699A US6192318B1 US 6192318 B1 US6192318 B1 US 6192318B1 US 33021699 A US33021699 A US 33021699A US 6192318 B1 US6192318 B1 US 6192318B1
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- waveguide
- detecting diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/04—Coupling devices of the waveguide type with variable factor of coupling
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/38—Impedance-matching networks
- H03H7/40—Automatic matching of load impedance to source impedance
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/38—Impedance-matching networks
Definitions
- the present invention relates to an automatic matching device provided in a waveguide, and more particularly, to an automatic matching device used for transmitting a microwave and reducing power losses of the microwave, which is to be transmitted to a load, by attenuating a standing wave developed in the waveguide to match the impedance of the waveguide to that of the load.
- an automatic matching device in a waveguide, which transmits a microwave generated by a magnetron to a load, in order to efficiently transmit the power of the microwave to the load by matching the impedance of the waveguide to the load.
- This automatic matching device efficiently transmits the power of the microwave to the load by detecting a standing wave developed in the waveguide and by automatically operating to attenuate this standing wave.
- the speed of automatic impedance matching operations must be increased, and the automatic matching device must be compact.
- the automatic matching device includes a detector section for detecting the standing wave developed in the waveguide; a matching section for attenuating the standing wave by matching the impedance of the waveguide to that of the load; and a control section for operating the matching device in accordance with the signal received from the detector section to attenuate the standing wave.
- matching devices there are stub matching devices, 4 -E matching devices, and E-H matching devices.
- the stub matching device has two or three stubs inserted into a waveguide, and impedance matching of the waveguide to the load is performed by adjusting the lengths of the inserted portions of the stubs.
- control section adjusts the lengths of the inserted portions of the stubs in accordance with the signal received from the detector section so as to match the impedance of the waveguide to that of the load.
- the 4 -E matching device comprises a waveguide 1 having a rectangular cross section and four E-plane branch waveguides 3 a to 3 d connected to a wider side, or an E-plane 2 , of the waveguide 1 .
- one wavelength of the microwave that travels along the waveguide 1 is ⁇ g
- the distance between the waveguides 3 a , 3 b and that between 3 c , 3 d is set to ⁇ g/4
- the distance between the waveguides 3 b , 3 c is set to 3 ⁇ g/8.
- a short-circuiting plunger 4 (hereinafter “short plunger”) is provided in each of the waveguides 3 a to 3 d , and the impedance of the waveguide 1 is matched to that of the load by adjusting the position of the short plunger 4 within each of the waveguides 3 a to 3 d.
- control section adjusts the positions of the short plungers 4 in accordance with the signal received from the detector section so as to match the impedance of the waveguide 1 to that of the load.
- the conventional E-H matching device comprises the waveguide 1 , an E-plane branch waveguide 5 connected to the E-plane 2 of the waveguide 1 , and an H-plane branch waveguide 6 connected to an H-plane, or a narrower side of the waveguide 1 .
- a short plunger 7 is provided in each of the waveguides 5 and 6 , and impedance matching of the waveguide 1 to the load is performed by adjusting the positions of the short plungers 7 in the waveguides 5 and 6 within the range of ⁇ g/2.
- control section adjusts the positions of the short plungers 7 in accordance with the signal received from the detector section so as to match the impedance of the waveguide 1 to that of the load.
- the detector section detects a standing wave developed in the waveguide and outputs the result of such detection to the control section.
- the detector section comprises three or more detecting diodes provided along the axis of the waveguide such that the tip ends of the detecting diodes are exposed to the interior of the waveguide. Output voltages from the diodes are fed to the control section as a power-distribution signal.
- the control section detects the presence/absence of a standing wave and controls the matching device so as to attenuate the standing wave or to match the impedance of the waveguide to that of the load.
- Each of the detecting diodes has a varying input-power-to-output-voltage characteristic.
- the input-power-to-output-voltage characteristic of the detecting diode comprises a linear region, a square-curve region, and a saturation region, in which the output voltage changes very little with respect to a variation in the input power.
- the output characteristic of the diode in the square-curve region must be corrected such that it becomes the same as the output characteristic in the linear region.
- the output voltage of each detecting diode is corrected by an analog circuit for characteristic correction purposes, and the thus-corrected output voltage is provided to the control section.
- the analog circuit corrects the output characteristic of the diode in the saturation range such that it becomes the same as the output characteristic in the linear region.
- the thus-corrected voltage is output.
- the stub matching device of the foregoing automatic matching devices if the power of the microwave transmitted to the load by the waveguide is increased, an electric discharge is likely to occur between the tip end of the stub and the interior surface of the waveguide. Further, if the amount of insertion of the stub is increased in order to sufficiently match the impedance of the waveguide to that of the load, an electric discharge is likely to occur between the tip end of the stub and the interior surface of the waveguide.
- the stub matching device perform impedance matching with regard to a microwave having high power. More specifically, in the case of impedance matching with regard to a microwave of 2.45 GHz, impedance matching with regard to about 2 kW is the limit of the stub matching device.
- the 4 -E matching device is superior to the stub matching device in terms of resistance to power.
- the four E-plane branch waveguides 3 a to 3 d must be provided at predetermined intervals on the E-plane of the waveguide 1 . Accordingly, if the length L of the matching device is increased, the size of a three-dimensional circuit constituting the matching device is increased accordingly.
- the E-H matching device is superior to the stub matching device in terms of resistance to power.
- the E-plane branch waveguide protrudes from the plane E in the vertical direction
- the H-plane branch waveguide protrudes from the plane H in the horizontal direction, which causes the three-dimensional circuit constituting the matching device to be bulky.
- an unwanted high-order mode with respect to the frequency ⁇ g of the microwave to be transmitted is likely to be generated due to the presence of the H-plane branch waveguide, so that the power distribution of the standing wave is susceptible to disturbance.
- Another problem suffered by the E-H matching device is that when the detector section detects the standing wave by detecting the distribution of power in the waveguide, owing to the disturbance of the power distribution, it becomes impossible for the detector section to accurately detect the standing wave.
- the distance between the E-H matching device and the detector section must be increased.
- such a circuit configuration results in an increase in the size of the three-dimensional circuit constituting the matching device.
- the detector section must correct the characteristic variation of each detecting diode by using an analog circuit. If the dynamic range of the power distribution in the waveguide extends from the linear region to the square curve region of the detecting diode, the output characteristic variation of the diode must be corrected by the analog circuit, and the power distribution must be detected in accordance with the corrected output voltage of the detecting diode. Further, if the dynamic range of the power distribution in the waveguide reaches the saturation region of the detecting diode, a corresponding output voltage variation must also be corrected by the analog circuit.
- the analog circuit must be readjusted in accordance with the output characteristic of the new detecting diode.
- the analog circuit must be replaced with a new one, the output characteristic of the new analog circuit must be adjusted in accordance with the output characteristics of the detecting diodes to be connected to the analog circuit. As described above, replacement of the detecting diode or the analog circuit requires very complicated exchange operations.
- An object of the present invention is to provide an E-H matching device that reduces the size of a three-dimensional circuit and ensures sufficient resistance to power.
- Another object of the invention is to provide an automatic matching device that reduces the size of a three-dimensional circuit and accurately detects a standing wave within a waveguide.
- Still another object of the invention is to provide an automatic matching device equipped with a detector section for accurately detecting the distribution of power in a waveguide by readily and accurately correcting variations in and the output characteristics of detecting diodes.
- Yet another object of the invention is to provide an automatic matching device equipped with a detector section that readily adjusts the output characteristic of a detecting diode after replacement of the diode.
- a further object of the invention is to provide an automatic matching device and an automatic matching method, both of which permit high-speed impedance matching.
- the apparatus invention is directed to an E-H matching apparatus for a waveguide body.
- the E-H matching apparatus includes: an E-plane branch waveguide connected to the waveguide body; an H-plane branch waveguide connected to the waveguide body; and plungers provided in the E-plane branch waveguide and the H-plane branch waveguide, respectively. The plungers are moved to establish impedance matching between the waveguide body and a load.
- the H-plane branch waveguide has a bend portion formed in close proximity to the waveguide body.
- the automatic microwave impedance-matching apparatus includes: an E-H matching apparatus including an H-plane branch waveguide and H-plane branch waveguide connected to the waveguide body, the E-H matching apparatus further including plungers provided in the E-plane branch waveguide and the H-plane branch waveguide; a detector unit for detecting the distribution of power within the waveguide body; and a control unit for receiving a detection result from the detector unit and detecting a standing wave developed as a result of an impedance mismatch between the load and the waveguide body, the control unit further controlling the plungers so as to attenuate the standing wave.
- One aspect of the method invention is directed to a method for automatically matching microwave impedance between a load and a waveguide.
- the method includes the steps of: detecting the power of the inside of the waveguide four or more points defined at intervals corresponding to one-eighth of the wavelength of the microwave to be transmitted along the waveguide and generating a plurality of detection signals; eliminating, from the detection signals, a detection signal associated with one of the points that exceeds the dynamic range of the detection signal; detecting the standing wave developed in the waveguide in accordance with the remaining detection signals; and attenuating the detected standing wave.
- Another aspect of the method invention is directed to a method for automatically matching microwave impedance between a load and a waveguide.
- the method includes the steps of: providing an impedance matching apparatus, which is connected to the waveguide, for detecting and attenuating a standing wave developed in the waveguide, the impedance matching apparatus including a movable plunger used for attenuating the standing wave; moving the plunger at high speed when the standing wave is greater than a predetermined level; and moving the plungers at low speed when the standing wave is smaller than the predetermined level.
- One aspect of the invention is directed to a recording medium suitable for use in an impedance matching apparatus adapted to a waveguide transmitting a microwave to a load.
- the apparatus has detecting diodes and a computer.
- the recording medium has a program, which includes a predetermined approximate expression, recorded therein.
- the program causes the computer to: compute an approximation value of input power to the waveguide using the predetermined approximate expression and output voltages of detecting diodes; compute coefficient of reflection and phase of the input power; determine whether impedances of the waveguide and the load match with each other; and execute automatic impedance matching of the impedance matching apparatus when the impedances of the waveguide and the load do not match with each other.
- FIGS. 1A and 1B are explanatory views showing a conventional 4 -E matching device
- FIG. 2 is a perspective view showing a conventional E-H matching device
- FIG. 3 is a cross-sectional view showing the conventional E-H matching device
- FIG. 4 is a perspective view showing the outline of an E-H matching device of the present invention.
- FIG. 5 is a block diagram of a plasma generator of one embodiment of the present invention.
- FIG. 6 is a perspective view showing an E-H matching device used in one embodiment of the invention.
- FIG. 7 is a partially sectioned front view showing the E-H matching device used in the embodiment of FIG. 6;
- FIG. 8 is a partially sectioned side view showing the E-H matching device used in the embodiment of FIG. 6;
- FIG. 9 is a plan view showing the E-H matching device, in which an E-bend is brought in proximity to a waveguide;
- FIG. 10 is an explanatory view showing the operation of a short plunger used in the embodiment of FIG. 6;
- FIG. 11 is an explanatory view showing the state of a reflected waveform within the E-H matching device
- FIG. 12 is an explanatory view showing the operation of the short plunger of the E-H matching device
- FIG. 13 is a block diagram showing an automatic matching device of the present invention.
- FIG. 14 is an explanatory diagram showing the operation of a detector section
- FIG. 15 is an explanatory diagram showing the matching operation of the E-H matching device of the present invention.
- FIG. 16 is an explanatory diagram showing the matching operation of the conventional E-H matching device
- FIGS. 17-20 are explanatory views showing the matching operation of the E-H matching device of the present invention.
- FIGS. 21-26 are flowcharts illustrating the automatic matching operation of the device of the present invention.
- FIG. 27 is a perspective view showing a modification of the E-H matching device in accordance with the present invention.
- FIG. 28 is a perspective view showing another modification of the E-H matching device in accordance with the present invention.
- FIG. 29 is a perspective view showing still another modification of the E-H matching device in accordance with the present invention.
- FIG. 30 is an explanatory diagram illustrating a detection section at the time an approximate expression is generated
- FIG. 31 is a flowchart showing a first approximation system
- FIG. 32 is a flowchart showing a second approximation system
- FIG. 33 is a flowchart illustrating an automatic matching operation of an automatic impedance matching device
- FIG. 34 is a schematic diagram of semiconductor equipment having an automatic impedance matching device according to the invention.
- FIG. 35 is a schematic diagram of semiconductor equipment having a conventional automatic impedance matching device.
- FIG. 4 is a perspective view showing the outline of an E-H matching device according to the present invention.
- the E-H matching device includes a waveguide 14 , an E-plane branch waveguide 20 connected to an E plane of the waveguide 14 , and an H-plane branch waveguide 25 connected to an H plane of the waveguide 14 .
- Impedance matching of the waveguide 14 to a load is effected by moving short plungers 21 , 26 provided in the respective waveguides 20 and 25 .
- the H-plane branch waveguide 25 is provided with an E-bend 30 which is formed in proximity to the waveguide 14 .
- FIG. 5 is a block diagram of a plasma generator equipped with a microwave automatic matching device.
- a magnetron 11 generates a microwave having a predetermined frequency when power is supplied thereto from a power source 12 .
- the microwave is transmitted to the waveguide 14 via an isolator 13 and is further transmitted to a chamber 15 from the waveguide 14 .
- Plasma is generated from the thus-supplied microwave in the chamber 15 and is then used in, e.g., a process of manufacturing semiconductor devices.
- An automatic impedance matching device 16 is provided for the waveguide 14 to efficiently transmit the power of the microwave to the chamber 15 by matching the impedance of the waveguide 14 to that of a load, or to that of the chamber 15 .
- the automatic matching device 16 comprises a detector section 17 for detecting a developed standing wave by detecting the distribution of power within the waveguide 14 ; a control section 18 , which receives a signal from the detector section 17 and calculates and outputs a control signal for attenuating the standing wave; and an E-H matching device 19 , which receives the control signal from the control section 18 and attenuates the developed standing wave in the waveguide 14 in accordance with the control signal.
- the specific configuration of the E-H matching device 19 and the detector section 17 is described with reference to FIGS. 6 to 8 .
- the E-plane branch waveguide 20 is formed on the E-plane of the waveguide 14 , and, as shown in FIG. 8, an E-plane short plunger 21 is provided in the waveguide 20 .
- the E-plane short plunger 21 is in screw-engagement with a feed screw 22 , and a pulley 23 is attached to the upper end of the feed screw 22 .
- the pulley 23 is rotatively driven by an E-plane motor 24 via a belt.
- the pulley 23 being rotated by the E-plane motor 24 , which is controlled in accordance with the control signal received from the control section 18 , the feed screw 22 is rotated.
- the E-plane short plunger 21 moves up and down within the E-plane branch waveguide 20 .
- the H-plane branch waveguide 25 is provided on the H plane of the waveguide 14 .
- the H-plane branch waveguide 25 is bent at the E-bend 30 so that the H-plane branch waveguide 25 extends in the vertical direction, i.e., in a direction parallel to the E-plane branch waveguide 20 .
- an H-plane short plunger 26 is provided in the H-plane branch waveguide 25 .
- the H-plane short plunger 26 is in screw-engagement with a feed screw 27 , and a pulley 28 is attached to the upper end of the feed screw 27 .
- the pulley 28 is rotatively driven by an H-plane motor 29 via a belt.
- the feed screw 27 is rotated.
- the H-plane short plunger 26 moves up and down within the H-plane branch waveguide 25 .
- the E-H matching device has a dimension L 1 of the E plane measuring 108.2 mm, a dimension L 2 of the H plane measuring 54.6 mm, and a distance L 3 between the waveguide 14 and the H-plane branch waveguide 25 measuring 162.8 mm.
- the distance between the E-bend 30 and the H plane of the waveguide 14 is set to ⁇ g/4 or less.
- a distance L 4 (FIG. 8) between the interior surface of the H plane of the waveguide 14 and the point of the bend on the center axis of the H-plane branch waveguide 25 within the E-bend 30 is set to ⁇ g/4 or less.
- the waveguide 25 for transmitting a microwave equipped with an E-bend 30 has the effect of shortening the wavelength ⁇ g of the microwave passing through the E-bend 30 . Further, the waveguide has the effect of removing a part of an unwanted frequency band of the microwave passing through the E-bend 30 and cuts off the disturbance of an electromagnetic field occurring along the interface between the waveguide 14 and the H-plane branch waveguide 25 . Accordingly, disturbance in the distribution of power is prevented in the interior of the waveguide 14 in the vicinity of the interface between the waveguide 14 and the H-plane branch waveguide 25 .
- the H-plane branch waveguide 6 is ended without any bend, and a high-order mode occurs depending on the position of the H-plane short plunger.
- the influence of the high-order mode is reduced by the E-bend 30 , enabling improvements in the characteristics of the matching device.
- FIG. 11 shows the state of reflection of a conventional E-H matching device in which the degrees of reflection when the respective short plungers are positioned at different positions are shown.
- the plungers In the case of the construction of a full-range matching device in which the short plungers are operated or moved while the interior surfaces 1 a and 1 b of the waveguide 1 are regarded as the points of origin, the plungers must pass through the positions of complete reflection. More specifically, the short plungers are usually moved while the positions of no reflection, which are spaced ⁇ g/2 away from the interior surfaces 1 a and 1 b of the waveguide 1 , are used as the centers of the operation ranges. In this case, full-range matching becomes feasible by movement of the short plungers 7 within the respective ranges of operation D 1 , D 2 shown in FIG. 12 .
- the H-plane short plunger 26 must be moved within the operation range D 3 shown in FIG. 10 because the E-bend 30 is directly connected to the interface between the waveguide 14 and the H-plane branch waveguide 25 . That is, the position of no reflection must be spaced ⁇ g apart from the interior surface 14 a of the waveguide 14 .
- the ⁇ g a parting position is used as the center of the operation range D 3 .
- the wavelength ⁇ g of the microwave becomes shorter by virtue of the wavelength-shortening effect of the E-bend 30 . Therefore, the distance between the center of the operation range D 3 of the H-plane short plunger 26 and the interior surface 14 a of the waveguide 14 is shortened. As a result, the length of the H-plane branch waveguide 25 is reduced.
- each detecting diodes W 1 to W 4 are arranged on the E plane of the waveguide 14 in the vicinity of the E-plane branch waveguide 20 such that they are arranged in a line at intervals of ⁇ g/8 in the axial direction of the waveguide 14 .
- the tip ends of the detecting diodes W 1 to W 4 are exposed inside the waveguide 14 .
- Each of the detecting diodes W 1 to W 4 detects input power in accordance with the distribution of power within the waveguide 14 and outputs to the control section 18 a voltage corresponding to the input power.
- the detecting diodes W 1 to W 4 need not be spaced with the interval of ⁇ g/8.
- the diodes W 1 to W 4 need not be arranged in a line as shown.
- the wavelength of the standing wave SW developed in the waveguide 14 becomes ⁇ g/2. Since the four detecting diodes W 1 to W 4 are provided at intervals of ⁇ g/8, at least three of the detecting diodes do not correspond to the valley of the standing wave SW. Accordingly, the distribution of power within the waveguide 14 is accurately detected in accordance with the voltages output from the three detecting diodes that do not correspond to the valley of the standing wave SW, and the standing wave SW can be accurately detected.
- the power level of the standing wave may exceed the dynamic range DM of the detecting diode. However, in this embodiment at least three of the four detecting diodes W 1 to W 4 do not correspond to the valley of the standing wave SW.
- the distribution of power is detected in accordance with the voltages output from the three detecting diodes W 1 to W 3 provided away from the interface and the standing wave SW can be more accurately detected.
- the specific configuration of the control section 18 is described with reference to FIG. 13 .
- the voltages output from the detecting diodes W 1 to W 4 are converted from analog to digital by an A/D converter 31 , and the thus-converted signals are sent to a CPU 32 .
- a memory section 33 is connected to the CPU 32 and stores a program used for causing the E-H matching device to automatically match the impedance of the waveguide 14 to that of the chamber 15 .
- This memory section 33 further stores an approximate expression used for calculating the power input to each of the detecting diodes W 1 to W 4 in accordance with the voltage output from each of the detecting diodes W 1 to W 4 . More specifically, the memory section 33 stores an approximate expression used for calculating input power while compensating for the output characteristic variations of the detecting diodes W 1 to W 4 and variations in the output voltage ranging across the linear, square curve, and saturation regions. Based on the relationship between the input power and the output voltage previously measured with regard to each of the detecting diodes W 1 to W 4 , the approximate expression is determined such that the relationship between the input power and the output voltage is accurately obtained even if the relationship between the input power and the output voltage is nonlinear.
- the number of detecting diodes is not necessarily limited to four. Since the input power is calculated from the output voltage of each detecting diode by the approximate expression, any number of detecting diodes can be provided, as long as at least three detecting diodes are provided.
- the CPU 32 is connected to a motor control section 35 and input/output section 34 .
- the motor control section 35 inputs control signals output from the CPU 32 and outputs motor control signals to an H-plane motor driver 36 a and an E-plane motor driver 36 b in accordance with the control signals.
- the drivers 36 a , 36 b respectively drive an H-plane motor 29 and an E-plane motor 24 in accordance with the motor control signals.
- an input/output section 34 Connected to a CPU 32 are an input/output section 34 and a motor control section 35 , which receives a control signal output from the CPU 32 . Based on the control signal, the motor control section 35 sends a motor control signal to an H-side motor driver 36 a and an E-side motor driver 36 b , which respectively drive an H-side motor 29 and an E-side motor 24 based on the motor control signals.
- a program for generating an approximate expression in accordance with the operation of the CPU 32 Prior to the automatic impedance matching, an automatic impedance matching device 16 performs an approximate expression generating operation in accordance with the program. This operation will now be discussed.
- a detection section 17 comprises detecting diodes W 1 to W 4 , pickups PU 1 to PU 4 and amplifiers AM 1 to AM 4 .
- the pickups PU 1 -PU 4 are normally connected to the detecting diodes W 1 -W 4 , respectively, and their antenna sections are exposed inside a waveguide 14 to supply the microwave power in the waveguide 14 to the corresponding detecting diodes W 1 -W 4 at given degrees of coupling.
- the detecting diodes W 1 -W 4 detect the output powers of the respective pickups PU 1 -PU 4 and send output voltages corresponding to the output powers to the corresponding amplifiers AM 1 -AM 4 .
- the amplifiers AM 1 -AM 4 amplify the output voltages of the detecting diodes W 1 -W 4 and send the amplified voltages to a control section 18 .
- the detecting diodes W 1 -W 4 are detachably connected to the associated pickups PU 1 -PU 4 ; in the approximate expression generating operation prior to the automatic impedance matching operation, the detecting diodes W 1 -W 4 are removed from the pickups PU 1 -PU 4 .
- a plurality of reference powers (dBm) of different levels are sequentially input to the detecting diodes W 1 -W 4 from a microwave signal generator 37 , and the control section 18 receives the output voltages output from the amplifiers AM 1 -AM 4 .
- the control section 18 also inputs the reference powers (dBm) via the input/output section 34 .
- the output voltages of the amplifiers AM 1 -AM 4 and the reference powers are subjected to A/D conversion by an A/D converter 31 before being input to the CPU 32 .
- the degrees of coupling of the pickups PU 1 -PU 4 which have been measured in advance by a measuring device (e.g., a vector network analyzer), are input to the control section 18 from the input/output section 34 .
- the first approximation system will be discussed with reference to FIG. 31 .
- the CPU 32 approximates the relationship between the input reference powers and the output voltages of the detecting diodes W 1 -W 4 , diode by diode, using a polynomial approximate expression and stores the resultant approximate expressions in the memory section 33 (step 51 ).
- the CPU 32 receives the degrees of coupling of the pickups PU 1 -PU 4 from the input/output section 34 and stores them in the memory section 33 (step 52 ).
- the input reference powers should have a wider range than the value of the input power in the waveguide 14 obtained during actual usage, and the CPU 32 generates the approximate expressions based on the output voltages of the detecting diodes W 1 -W 4 corresponding to the reference powers.
- This approximate expression generating process permits more accurate approximate expressions to be generated.
- the CPU 32 computes reference power levels corresponding to the output voltages of the detecting diodes W 1 -W 4 based on the output voltages of the detecting diodes W 1 -W 4 and the previously generated approximate expressions. The CPU 32 then computes power in the waveguide 14 based on the computed reference power levels and the degrees of coupling.
- the second approximation system will be discussed with reference to FIG. 32 .
- the CPU 32 operates based on the program previously stored in the memory section 33 , and stores the relationship between the input reference powers and the output voltages of the detecting diodes W 1 -W 4 in the memory section 33 for the respective detecting diodes W 1 -W 4 (step 61 ).
- the CPU 32 receives the degrees of coupling of the pickups PU 1 -PU 4 from the input/output section 34 and stores them in the memory section 33 (step 62 ).
- the input reference powers should have a wider range than the value of the input power in the waveguide 14 obtained in the actual usage, as in the case of the first approximation system.
- the CPU 32 computes the power actually input in the waveguide 14 based on the reference powers and the degrees of coupling, computes the relationship between that input power and the output voltages of the detecting diodes W 1 -W 4 , and stores the relationship in the memory section 33 (step 63 ).
- the CPU 32 generates a polynomial approximate expression based on the relationship between that input power and the output voltages of the detecting diodes W 1 -W 4 , and stores the approximate expression in the memory section 33 (step 64 ).
- the CPU 32 computes input power in the waveguide 14 corresponding to each of the output voltages of the detecting diodes W 1 -W 4 based on the output voltages of the detecting diodes W 1 -W 4 and the previously generated approximate expression.
- the input power in the waveguide 14 is directly calculated on the basis of the output voltages of the detecting diodes W 1 -W 4 and the approximate expression stored in the memory section 33 , so that approximation with a precision as high as or higher than the precision of the first approximation system can be accomplished, even with about a fifth order polynomial approximate expression.
- the CPU 32 receives the output voltages of the individual detecting diodes W 1 -W 4 (step 72 ) and computes the input power of the microwave input to the waveguide 14 based on the set approximate expressions (step 73 ).
- the CPU 32 calculates the coefficient of reflection and the phase of the input power in the waveguide 14 (step 74 ) and detects from the calculation results if the impedance of the waveguide 14 matches with the impedance of the load (step 75 ).
- the matching operation is terminated.
- the automatic impedance matching operation is executed (step 76 ), and, when an impedance match occurs through the repeated processing of steps 72 to 75 , the matching operation is terminated.
- the CPU 32 receives, as output voltage data, a voltage output from each of the detecting diodes W 1 to W 4 , which has been converted from the form of analog signal to the form of digital signal by the A/D converter 31 (step 1 ).
- the CPU 32 determines whether or not the input power exceeds the measuring range, or the dynamic range, of the detecting diodes (step 2 ). If one of the four detecting diodes W 1 to W 4 corresponds to the valley of the standing wave SW and the input power exceeds the dynamic range, the detecting diode that corresponds to the valley is removed (step 3 ). Input power of each of the remaining three detecting diodes is calculated from the output voltage data regarding the remaining diodes and the approximate expression stored in the memory section 33 (step 4 ).
- the CPU 32 uses a known expression to calculate the coefficient of reflection and phase of the standing wave from the calculated input power of the three detecting diodes (step 5 ).
- the CPU 32 uses the approximate expression to calculate the input power of each of the detecting diodes W 3 to W 1 from the output voltage data concerning the detecting diodes W 1 to W 3 (step 6 ). Further, the CPU 32 calculates the coefficient of reflection and phase of the standing wave from the calculated input power of the three detecting diodes (step 7 ).
- the CPU 32 determines whether or not the thus-calculated phase and coefficient of reflection of the standing wave are numerical values representing the state of impedance match (step 8 ). If there is an impedance match, the matching operation of the matching device is terminated.
- the CPU 32 determines the phase of the standing wave from among the region ranging from 0 to 90°, that ranging from 90° to 180°, that ranging from 180° to 270°, and that ranging from 270° to 360° (steps 9 to 11 ). Impedance matching for the appropriate region is commenced.
- FIGS. 17 and 18 are Smith charts, which represent the impedance calculated from the phase and coefficient of reflection of the standing wave. In a case where the phase is in the region ranging from 0 to 90°, the impedance matching operation is commenced in an area A 1 shown in FIG. 17 .
- the matching operation is performed in an area A 4 shown in FIG. 17 .
- the H-plane plunger 26 is moved toward the positive side H ′ (step 25 ).
- the CPU 32 moves the E-plane plunger 21 toward the positive direction E + (step 26 ). As a result, if the normalized resistance R has reached the point P, the state of an impedance match is realized, and the CPU 32 terminates impedance matching operations (step 27 ).
- the impedance matching operation is performed in an area A 2 shown in FIG. 18 .
- the E-plane plunger 21 is moved toward the positive side E ′ (step 35 ).
- the CPU 32 moves the H-plane plunger 26 toward the negative direction H ⁇ (step 36 ).
- the CPU 32 terminates impedance matching operations (step 37 ).
- the impedance matching operation is performed in an area A 3 shown in FIG. 18 .
- the E-plane plunger 21 is moved toward the negative side E ⁇ (step 45 ).
- the CPU 32 moves the H-plane plunger 26 toward the positive direction H + (step 46 ). As a result, if the normalized conductance G has reached the point P, the state of an impedance match is realized, and the CPU 32 terminates impedance matching operations (step 47 ).
- the short plungers 21 , 26 in order to improve the efficiency of transmission of power to the load by reducing the elapsed time between commencement and termination of the impedance matching operation, the short plungers 21 , 26 must be moved at high speed. However, it takes a predetermined period of time for the CPU 32 to calculate the state of reflection of the microwave from the data received from the detector section, and also it takes time for the short plungers 21 , 26 to reach stable positions when they are moved. For these reasons, the impedance matching operations can be performed in the following manner.
- the E-plane short plunger 21 is moved at high speed in a direction in which the reflection is reduced. If the normalized resistance R moves from Q 2 to Q 3 and is thus outside the area AR 1 , the H-plane short plunger 26 is moved in such a way that the normalized resistance R returns to a location within the area AR 1 . As a result, the normalized resistance R moves from Q 3 to Q 4 . Subsequently, the E-plane short plunger 21 is moved at high speed in a direction in which the reflection is reduced. These operations are performed repeatedly.
- the short plungers 21 , 26 are moved at high speed such that the normalized resistance R moves within the AR 1 so as to gradually approach the area AR 2 until the normalized resistance R reaches the inside of the area AR 2 . Accordingly, in the state where the reflection is large, the normalized resistance R can be immediately moved to the inside of the area AR 2 by high-speed actuation of the short plungers.
- the range over which the speed of actuation of the short plungers 21 , 26 is changed may be divided into a larger number of ranges. Further, the speed of actuation of the H-plane short plunger 26 and that of the E-plane short plunger 21 may be set individually.
- the oscillation frequency of the magnetron is set to 2.45 GHz in the previous embodiment, the frequency may slightly deviate from the frequency of 2.45 GHz.
- the wavelength of the standing wave developed in the waveguide 14 also deviates from the distance between the detecting diodes. As a result, a difference arises between the data detected by the detecting diodes and an actual standing wave.
- a difference arises between an impedance Q 11 calculated from the signal received from the detector section and an actual impedance Q 12 . If the impedance Q 11 and the impedance Q 12 are located on opposite sides with respect to the interface between the areas A 1 and A 2 , for example, the impedance Q 12 is matched to the matching point P within the area A 1 thereby lengthening the adjustment time or rendering impedance matching impossible.
- an interface area AR 4 having a predetermined phase angle ⁇ is set along the interface between the areas A 1 , A 2 . If the impedance Q 11 and the impedance Q 12 are positioned in the interface area AR 4 such that they are located on the opposite sides with respect to the interface, the matching device is set to match the impedance Q 12 to the matching point P in the area A 2 in accordance with the pre-input oscillation frequency data concerning the magnetron. As a result, stable automatic impedance matching operations become feasible.
- the distance between the interior wall of the waveguide and the center of the H-plane branch waveguide equipped with the E-bend is ⁇ g/4.
- the E-H matching device may be constructed in the following manner:
- the distance between the waveguide and the H-plane branch waveguide is reduced further until the distance between the interior wall of the waveguide and the center of the H-plane branch waveguide equipped with the E-bend becomes smaller than ⁇ g/4.
- the E-bend can cut off unwanted frequencies to a much greater extent, and the E-H matching device can be made more compact.
- the waveguide, the E-plane branch waveguide, and H-plane branch waveguide may be formed into flattened waveguides. With this configuration, the occurrence of a high-order mode in the interface between the waveguide and the H-plane branch waveguide can be reduced further.
- the detector section 17 is positioned in proximity to the E-H matching device 19 by virtue of the high-order mode propagation reduction effect of the E-bend 30 . Accordingly, the three-dimensional circuit can be made more compact.
- the replacement of the detecting diode can be performed readily by changing a corresponding approximate expression in conjunction with the replacement of the detecting diode.
- the region (A 1 to A 4 ) is detected on the basis of the calculated phase of the standing wave, and the load is matched to the impedance matching point P from each region. As a result, the distance over which the E-plane and H-plane short plungers 21 , 26 are moved is reduced, which improves the speed of impedance matching operations.
- the reference powers corresponding to the output voltages of the detecting diodes W 1 -W 4 are computed based on the output voltages of the detecting diodes W 1 -W 4 and the approximate expressions, and the input power of the microwave provided to the waveguide 14 is calculated based on the reference powers and the degrees of coupling of the pickups PU 1 -PU 4 .
- the relationship between the output voltages of the detecting diodes W 1 -W 4 and the input power to the waveguide 14 is approximated by disconnecting the detecting diodes W 1 -W 4 from the associated pickups PU 1 -PU 4 and inputting the reference powers to the respective detecting diodes W 1 -W 4 from the microwave signal generator 37 .
- the input power of the microwave input to the waveguide 14 is computed based on the output voltages of the detecting diodes W 1 -W 4 and the approximate expressions. The second approximation system therefore reduces the load on the CPU 32 more than the first approximation system.
- the reference powers have a wider range than the powers that are input to the detecting diodes W 1 -W 4 during actual use. It is therefore possible to generate approximate expressions that accurately approximate the powers to be input in the actual use.
- the automatic impedance matching device 16 can be made compact by compactly designing the EH matching device 19 compact, the site space W 1 of semiconductor equipment having a plurality of chambers 15 can be reduced as shown in FIG. 34 .
- the H-branch waveguide of the EH matching device significantly protrudes sideways, which requires a larger site space W 2 .
- the semiconductor equipment also includes the magnetrons 11 , the isolators 13 and the waveguides 14 provided independently with respect to a plurality of chambers 15 .
- Semiconductor equipment that uses the above-described EH matching device 19 may be embodied as a plasma CVD system, a plasma etching system, a plasma ashing system, a downflow plasma etching system, a downflow plasma ashing system, and ECR plasma etching system, and the like, and can contribute to reducing the site space for those systems.
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Abstract
Description
Claims (5)
Priority Applications (1)
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US09/330,216 US6192318B1 (en) | 1996-10-08 | 1999-06-11 | Apparatus and method for automatically matching microwave impedance |
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JP8-267147 | 1996-10-08 | ||
JP26714796 | 1996-10-08 | ||
JP9-264406 | 1997-09-29 | ||
JP26440697A JP3920420B2 (en) | 1996-10-08 | 1997-09-29 | EH matching device, microwave automatic matching method, semiconductor manufacturing equipment |
US08/946,004 US5939953A (en) | 1996-10-08 | 1997-10-07 | E-H matching device and apparatus and method for automatically matching microwave impedance |
US09/330,216 US6192318B1 (en) | 1996-10-08 | 1999-06-11 | Apparatus and method for automatically matching microwave impedance |
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US08/946,004 Division US5939953A (en) | 1996-10-08 | 1997-10-07 | E-H matching device and apparatus and method for automatically matching microwave impedance |
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US6192318B1 true US6192318B1 (en) | 2001-02-20 |
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US08/946,004 Expired - Lifetime US5939953A (en) | 1996-10-08 | 1997-10-07 | E-H matching device and apparatus and method for automatically matching microwave impedance |
US09/330,216 Expired - Lifetime US6192318B1 (en) | 1996-10-08 | 1999-06-11 | Apparatus and method for automatically matching microwave impedance |
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US6452400B1 (en) * | 1998-10-20 | 2002-09-17 | Tokyo Electron Limited | Method of measuring negative ion density of plasma and plasma processing method and apparatus for carrying out the same |
US20040261717A1 (en) * | 2001-09-28 | 2004-12-30 | Nobuo Ishii | Matching device and plasma processing apparatus |
US20050029954A1 (en) * | 2003-08-06 | 2005-02-10 | Canon Kabushiki Kaisha | Plasma processing apparatus and method |
US20080186032A1 (en) * | 2004-09-14 | 2008-08-07 | Koninklijke Philips Electronics N.V. | Circuit for Detecting the Impedance of a Load |
US20090078559A1 (en) * | 2007-09-21 | 2009-03-26 | Proudkii Vassilli P | Method and apparatus for multiple resonant structure process and reaction chamber |
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US20120123750A1 (en) * | 2010-11-11 | 2012-05-17 | King Abdullah University of Science and Technology (KAUST) | Fractional Order Element Based Impedance Matching |
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US9295968B2 (en) | 2010-03-17 | 2016-03-29 | Rf Thummim Technologies, Inc. | Method and apparatus for electromagnetically producing a disturbance in a medium with simultaneous resonance of acoustic waves created by the disturbance |
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US20120256698A1 (en) * | 2011-04-07 | 2012-10-11 | Commissariat A I'energie Atomique Et Aux Energies Alternatives | Automatic Impedance Matching Method for Radiofrequency Circuit and Modular Emission or Reception Chain |
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Also Published As
Publication number | Publication date |
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US5939953A (en) | 1999-08-17 |
KR100302085B1 (en) | 2001-10-27 |
KR19980032623A (en) | 1998-07-25 |
KR100348856B1 (en) | 2002-08-17 |
JP3920420B2 (en) | 2007-05-30 |
JPH10233606A (en) | 1998-09-02 |
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