US6176141B1 - Method for stud pull test for film formed on semiconductor device - Google Patents

Method for stud pull test for film formed on semiconductor device Download PDF

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US6176141B1
US6176141B1 US09/332,379 US33237999A US6176141B1 US 6176141 B1 US6176141 B1 US 6176141B1 US 33237999 A US33237999 A US 33237999A US 6176141 B1 US6176141 B1 US 6176141B1
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stud
film
sample
test
substrate
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Lung-Hsiang Chuang
Chung-Long Chang
Syun-Ming Jang
Ying-Chen Chao
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N3/00—Investigating strength properties of solid materials by application of mechanical stress
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N19/00—Investigating materials by mechanical methods
    • G01N19/04—Measuring adhesive force between materials, e.g. of sealing tape, of coating
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
    • G01N2203/0014—Type of force applied
    • G01N2203/0016—Tensile or compressive
    • G01N2203/0017—Tensile
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
    • G01N2203/0058—Kind of property studied
    • G01N2203/0091—Peeling or tearing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
    • G01N2203/02—Details not specific for a particular testing method
    • G01N2203/026—Specifications of the specimen
    • G01N2203/0262—Shape of the specimen
    • G01N2203/0278—Thin specimens
    • G01N2203/0282—Two dimensional, e.g. tapes, webs, sheets, strips, disks or membranes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
    • G01N2203/02—Details not specific for a particular testing method
    • G01N2203/026—Specifications of the specimen
    • G01N2203/0286—Miniature specimen; Testing on microregions of a specimen
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
    • G01N2203/02—Details not specific for a particular testing method
    • G01N2203/026—Specifications of the specimen
    • G01N2203/0296—Welds
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
    • G01N2203/02—Details not specific for a particular testing method
    • G01N2203/04—Chucks, fixtures, jaws, holders or anvils
    • G01N2203/0429—Chucks, fixtures, jaws, holders or anvils using adhesive bond; Gluing

Definitions

  • This invention relates generally to testing the adhesion of a film to its underlying structure in a semiconductor wafer, and more specifically it relates to an improved test sample and method for preparing the test sample.
  • Semiconductor chips are commonly formed of multiple layers of conductors and dielectrics, for example a film of a dielectric material formed on an underlying structure. It is desirable to test the adhesion of such a film to the underlying structure. This test can be performed on an actual semiconductor device or on a sample that is made to adequately represents the film and underlying structure of the semiconductor device.
  • U.S. Pat. No. 4,876,896 teaches testing the adhesion of a grouting to an underlying pier.
  • a circular groove is cut through the grouting to isolate a circular test region.
  • a part 42, 42a is attached to the outer surface of the test region.
  • a screw mechanism applies a pulling force to the attached part, and a bridge applies a corresponding force to the structure outside the circular groove. The screw is calibrated to show the force.
  • U.S. Pat. No. 4,895,028 teaches apparatus for pulling on a wire that is bonded at each end to bonding pads of an integrated circuit device. The force is measured with a strain gauge and a computer calculates the force on the bonds.
  • U.S. Pat. No. 5,337,614 teaches an apparatus for grasping a circuit module and a heat sink attached to the module for an adhesion test.
  • a stud has been attached to a film formed on a test sample and then the stud has been pulled from the sample until the film breaks loose from its underlying structure.
  • the stud may break from the film before the film separates from its underlying structure and before the test has reached a pull force of interest.
  • One object of this invention is to provide an adhesion test that can be performed on a wafer or a test sample representing a wafer and to avoid making this test at a later stage in the manufacture of the semiconductor structure.
  • Another object of this invention is to provide a stud pull test for a semiconductor layer in which the stud remains adhered to the layer for a greater test pull.
  • a test sample is formed with an underlying structure and a film.
  • This test sample is prepared for the attachment of a pull stud by process steps that include boiling the sample in a salt water solution for a suitable time.
  • the stud is attached to the film with epoxy and this assembly is clamped and baked for a suitable time to form a bond.
  • the stud pull test is then performed with significantly less likelihood that the stud will break from the film before the film breaks from the underlying structure.
  • FIG. 1 is a diagram of a test sample for our pull test.
  • FIG. 2 is a flow chart showing the steps for preparing and testing a sample.
  • FIG. 3 is a plot of the maximum adhesion stress for samples prepared with variations in four parameters.
  • Table 1 shows the results of tests on test samples with several different films.
  • Table 2 shows test results organized to isolate the effects of four parameters on maximum adhesion stress.
  • the test can be performed on an actual circuit component, but preferably the test is performed on a test sample 10 .
  • the preferred samples have a substrate 12 and one or more films 13 formed on one surface of the substrate.
  • the films 13 can be identical to provide more data about a given film and/or the films can differ in composition or processing for comparing one film with another.
  • the samples 10 are identified at to the material and/or process for forming the film and the failure or success of a test can be attributed to the composition or processing of a particular film.
  • a stud 14 is attached to the exposed surface 15 of film 13 by epoxy 16 coating the stud, and a test is performed to pull apart substrate 12 and stud 14 .
  • the apparatus for the pull test is conventional and is represented in FIG. 1 by arrows 16 and 17 that point away from the sample and the stud.
  • the film 13 may delaminate from the substrate 12 (or two films may separate in a multi film test sample) or the test may be stopped at a preselected force before the film delaminates.
  • the test apparatus signals the separating force during the test and at the time of any delamination. It is possible that the stud 14 will break away from its epoxy 16 . Although it is possible that the stud epoxy 16 will separate from film 13 , this event is much less likely than with stud pull tests of the prior art.
  • a substrate 12 is formed.
  • the preferred substrate 12 is a metal square about 5 mm on a side. This structure simulates a metal layer of a semiconductor wafer except that the substrate 12 is given a suitable thickness to withstand the pull test.
  • One commonly used metal its aluminum and it is suitable for the substrate. Other commonly used metals well known.
  • a selected film 13 is formed on a surface of a substrate.
  • the film is of a material that would be used in an actual semiconductor device, and it is formed by a production process that is otherwise being used in manufacturing wafers, by a process similar to such a production process, or by an experimental process that is to be investigated. Suitable films are well known and several are listed in Table 1.
  • substrates can be formed initially as a single piece of metal with a selected film and then cut into the individual test samples.
  • the test sample is maintained in a boiling salt water solution for a suitable time.
  • the preferred salt solution has a concentration of 15 grams of sodium chloride (NaCl) in 200 ml water, and the preferred time is 3.5 hours.
  • a suitable stud 14 is given an epoxy coating.
  • the preferred stud is a nail with a diameter of 0.106 inches. Step 23 can be performed at any time with respect to the sequence of steps 20 , 21 , and 22 .
  • step 24 the epoxy stud is clamped to the test sample with one surface contacting the surface of film 13 .
  • the clamped components are baked at a suitable temperature for a suitable time to bond the stud to the film.
  • the preferred temperature is 150 C. and the preferred time is 3 hours.
  • step 25 the samples are removed from the oven and the clamps are removed and the test samples are allowed to cool to room temperature. A sample is then placed in the pull test apparatus.
  • automated equipment is commonly used for the pull test. The tool slowly increases the pull force until the film delaminates from the substrate or the stud delaminates from its own epoxy.
  • the rows in Table 1 show the test results for seven different films.
  • the salt concentration was 15 grams to 200 ml water, the boiling time was 3.5 hours, the stud diameter was 0.106 inches.
  • PETEOS plasma enhanced TEOS
  • TEOS tetraethyl-orthosilicate
  • the right-most column gives the film delamination force in Newtons. This number is usually divided by the area of the stud contact to give the stud pull strength. Note that the films are listed by rank for film delamination force.
  • the second right-most column gives the percentage of the film that was removed during this test. A smaller number suggests that the adhesion is better and that a smaller portion of the film delaminated.
  • Table 2 shows the process and the test results for several test samples.
  • the uppermost row of Table 2 has identifiers for the columns of the table and the second row gives the units for the numerals in the columns. Each other row gives the parameters for one test.
  • the left-most column for these other rows (Name) has arbitrary names for the tests.
  • FIG. 3 presents this data in the form of four plots that are organized with a common vertical axis, maximum stress in Newtons. They have individual values along the horizontal axis and a legend that identifies the parameter. For example, the left-most plot shows curing time for 1 hour, 3 hours, and 5 hours.

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  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Sampling And Sample Adjustment (AREA)

Abstract

A test sample with a film and an underlying substrate representing part of a semiconductor wafer is prepared for a stud pull test by a process that includes maintaining the sample in boiling salt water for a few hours. When an epoxy stud is attached to the film of the sample and the clamped assembly is baked for a about an hour, the stud is firmly attached to the film and in an otherwise conventional pull test, the film breaks loose from the substrate (or the stud breaks from the epoxy) before the stud breaks from the film.

Description

FIELD OF THE INVENTION
This invention relates generally to testing the adhesion of a film to its underlying structure in a semiconductor wafer, and more specifically it relates to an improved test sample and method for preparing the test sample.
1. Introduction
Semiconductor chips are commonly formed of multiple layers of conductors and dielectrics, for example a film of a dielectric material formed on an underlying structure. It is desirable to test the adhesion of such a film to the underlying structure. This test can be performed on an actual semiconductor device or on a sample that is made to adequately represents the film and underlying structure of the semiconductor device.
2. The Prior Art
U.S. Pat. No. 4,876,896 teaches testing the adhesion of a grouting to an underlying pier. A circular groove is cut through the grouting to isolate a circular test region. A part 42, 42a is attached to the outer surface of the test region. A screw mechanism applies a pulling force to the attached part, and a bridge applies a corresponding force to the structure outside the circular groove. The screw is calibrated to show the force.
U.S. Pat. No. 4,895,028 teaches apparatus for pulling on a wire that is bonded at each end to bonding pads of an integrated circuit device. The force is measured with a strain gauge and a computer calculates the force on the bonds.
U.S. Pat. No. 5,337,614 teaches an apparatus for grasping a circuit module and a heat sink attached to the module for an adhesion test.
In the manufacturing art to which this invention is particularly intended, tests for adhesion have been made after the wafer has been completed and formed into modules.
In another example of an adhesion test in this art, a stud has been attached to a film formed on a test sample and then the stud has been pulled from the sample until the film breaks loose from its underlying structure. Unfortunately, the stud may break from the film before the film separates from its underlying structure and before the test has reached a pull force of interest.
SUMMARY OF THE INVENTION
One object of this invention is to provide an adhesion test that can be performed on a wafer or a test sample representing a wafer and to avoid making this test at a later stage in the manufacture of the semiconductor structure.
Another object of this invention is to provide a stud pull test for a semiconductor layer in which the stud remains adhered to the layer for a greater test pull.
According to this invention a test sample is formed with an underlying structure and a film. This test sample is prepared for the attachment of a pull stud by process steps that include boiling the sample in a salt water solution for a suitable time. The stud is attached to the film with epoxy and this assembly is clamped and baked for a suitable time to form a bond. The stud pull test is then performed with significantly less likelihood that the stud will break from the film before the film breaks from the underlying structure.
THE DRAWING
FIG. 1 is a diagram of a test sample for our pull test.
FIG. 2 is a flow chart showing the steps for preparing and testing a sample.
FIG. 3 is a plot of the maximum adhesion stress for samples prepared with variations in four parameters.
THE TABLES
Table 1 shows the results of tests on test samples with several different films.
Table 2 shows test results organized to isolate the effects of four parameters on maximum adhesion stress.
The Preferred Embodiment
Introduction—FIG. 1
Our test can be performed on an actual circuit component, but preferably the test is performed on a test sample 10. The preferred samples have a substrate 12 and one or more films 13 formed on one surface of the substrate. We contemplate that a test will be made with a batch of several samples having identical substrates 12. The films 13 can be identical to provide more data about a given film and/or the films can differ in composition or processing for comparing one film with another. As is conventional, the samples 10 are identified at to the material and/or process for forming the film and the failure or success of a test can be attributed to the composition or processing of a particular film.
A stud 14 is attached to the exposed surface 15 of film 13 by epoxy 16 coating the stud, and a test is performed to pull apart substrate 12 and stud 14. The apparatus for the pull test is conventional and is represented in FIG. 1 by arrows 16 and 17 that point away from the sample and the stud.
As the force is increased during this test, the film 13 may delaminate from the substrate 12 (or two films may separate in a multi film test sample) or the test may be stopped at a preselected force before the film delaminates. The test apparatus signals the separating force during the test and at the time of any delamination. It is possible that the stud 14 will break away from its epoxy 16. Although it is possible that the stud epoxy 16 will separate from film 13, this event is much less likely than with stud pull tests of the prior art.
Preparing the Samples—FIG. 2
In the step identified by reference character 20, a substrate 12 is formed. The preferred substrate 12 is a metal square about 5 mm on a side. This structure simulates a metal layer of a semiconductor wafer except that the substrate 12 is given a suitable thickness to withstand the pull test. One commonly used metal its aluminum and it is suitable for the substrate. Other commonly used metals well known.
In step 21 in FIG. 2, a selected film 13 is formed on a surface of a substrate. The film is of a material that would be used in an actual semiconductor device, and it is formed by a production process that is otherwise being used in manufacturing wafers, by a process similar to such a production process, or by an experimental process that is to be investigated. Suitable films are well known and several are listed in Table 1.
Several substrates can be formed initially as a single piece of metal with a selected film and then cut into the individual test samples.
In step 22 in FIG. 2, the test sample is maintained in a boiling salt water solution for a suitable time. The preferred salt solution has a concentration of 15 grams of sodium chloride (NaCl) in 200 ml water, and the preferred time is 3.5 hours.
In step 23 in FIG. 2, a suitable stud 14 is given an epoxy coating. The preferred stud is a nail with a diameter of 0.106 inches. Step 23 can be performed at any time with respect to the sequence of steps 20, 21, and 22.
In step 24, the epoxy stud is clamped to the test sample with one surface contacting the surface of film 13. The clamped components are baked at a suitable temperature for a suitable time to bond the stud to the film. The preferred temperature is 150 C. and the preferred time is 3 hours.
In step 25, the samples are removed from the oven and the clamps are removed and the test samples are allowed to cool to room temperature. A sample is then placed in the pull test apparatus. As the prior art citations suggest, automated equipment is commonly used for the pull test. The tool slowly increases the pull force until the film delaminates from the substrate or the stud delaminates from its own epoxy.
TABLE 1
% film Film delamination
Film Scheme removed Force (Newtons)
8KÅ USG ˜40% 435
6KÅ FSG + N2 + 2KÅ HDP USG ˜70% 335
0.5KÅ PETEOS + 4KÅ HSQ + N2 + ˜60% 235
4KÅ PETEOS
0.5KÅ PEOX + 4KÅ HSQ + N2 + ˜65% 220
4KÅ PETOS
4KÅ HSQ + N2 + 4KÅ PETEOS ˜65% 205
(Direct on Metal)
300Å SiON + 0.5KÅ PEOX + 4KÅ ˜70% 200
HSQ + N2 + 4KÅ PETEOS
300Å SiON + 4KÅ HSQ + N2 + ˜80% 175
4KÅ PETEOS
Test Results—Table 1
The rows in Table 1 show the test results for seven different films. The salt concentration was 15 grams to 200 ml water, the boiling time was 3.5 hours, the stud diameter was 0.106 inches.
Five samples of each film were tested and the results were consistent and reproducible for each film. Other tests, still preliminary, showed a correlation between the results in Table 1 and the electrical characteristics of the corresponding wafers in the prior art test described earlier.
The left-most column gives information about the film. The abbreviations and acronyms in this column will be readily understood to define the films, primarily in terms of the process for forming the film. For example, PETEOS stands for “plasma enhanced TEOS” and TEOS stands for tetraethyl-orthosilicate” which is used as a source of oxygen in the plasma deposition of an oxide film. “K” stands for thousand for the thickness in Angstroms.
The right-most column gives the film delamination force in Newtons. This number is usually divided by the area of the stud contact to give the stud pull strength. Note that the films are listed by rank for film delamination force.
The second right-most column gives the percentage of the film that was removed during this test. A smaller number suggests that the adhesion is better and that a smaller portion of the film delaminated.
TABLE 2
Curing Curing Cooking Max
Name Time Temp Time Salt Stress
unit hours Celsius hours grams N
level-1 1 125 1 5
level-2 3 150 2.5 15
level-3 5 175 4 25
run #1 1 125 1 5 309
run #2 1 150 2.5 15 254.62
run #3 1 175 4 25 221.7
run #4 3 125 2.5 25 280
run #5 3 150 4 5 145.96
run #6 3 175 1 15 283.87
run #7 5 125 4 15 167.5
run #8 5 150 1 25 356.8
run #9 5 175 2.5 5 284.6
run #10 1 125 1 5 309
Test Results—Table 2
Table 2 shows the process and the test results for several test samples. The uppermost row of Table 2 has identifiers for the columns of the table and the second row gives the units for the numerals in the columns. Each other row gives the parameters for one test. The left-most column for these other rows (Name) has arbitrary names for the tests.
Columns Curing Time and Curing Temp give these parameters for the step of baking the clamped stud and test sample, step 24 in FIG. 2.
Columns Cooking Time and Salt give the parameters for boiling the test sample in a salt water solution, step 22 in FIG. 2. Column Max Stress gives the results of the stud pull test on the sample.
Test Results—FIG. 3
FIG. 3 presents this data in the form of four plots that are organized with a common vertical axis, maximum stress in Newtons. They have individual values along the horizontal axis and a legend that identifies the parameter. For example, the left-most plot shows curing time for 1 hour, 3 hours, and 5 hours.
Other Embodiments
From our description of the preferred embodiment, those skilled in the art will recognize modifications within the spirit of the invention and the scope of the claims.

Claims (11)

What is claimed is:
1. A method for testing the adhesion of a selected film and a substrate underlying the film, comprising the following steps,
preparing a test sample having the substrate and film,
maintaining the sample in a boiling solution of salt water for a selected time,
providing an epoxy coated pull stud, clamping the pull stud to the film of the test sample, and baking the stud and sample at a selected temperature while maintaining the stud clamped to the sample test sample for a selected time to attach the stud to the film,
cooling the test sample and removing the clamp, and
slowly pulling the stud from the sample until the film breaks from the substrate or the stud breaks from the epoxy bonding the stud to the film.
2. The testing method of claim 1 wherein the salt solution has a concentration of about 15 grams of sodium chloride for 200 ml of water.
3. The testing method of claim 2 wherein the selected time for maintaining the sample in a boiling solution of salt water is in the range of 1 to 4 hours.
4. The testing method of claim 3 wherein the selected time for maintaining the sample in a boiling solution of salt water is about 3.5 hours.
5. The method of claim 3 wherein the substrate is a metal.
6. The method of claim 5 wherein the substrate is in the shape of a square of a selected length on a side and of a thickness selected for the pull test.
7. The method of claim 6 wherein the sample is about 5 millimeters on a side.
8. The method of claim 7 wherein the metal substrate is initially of a size for forming a plurality of samples and the step of preparing the test sample includes slicing the initial substrate into a plurality of samples with sides of a selected length.
9. The method of claim 6 wherein the selected time for baking the stud and sample to attach the stud to the film is a few hours.
10. The method of claim 9 wherein the selected time is about three hours.
11. The method of claim 10 wherein the selected temperature is about 150 degrees Celsius.
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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6370962B1 (en) * 2000-06-14 2002-04-16 Testing Machines, Inc. Dynamic high speed tensile tester
US20070228591A1 (en) * 2006-02-15 2007-10-04 Airbus France Process for conducting adherence tests for a coating on a substrate
RU2464583C2 (en) * 2009-11-17 2012-10-20 Государственное образовательное учреждение высшего профессионального образования "Воронежский государственный технический университет" Method for comparative assessment of reliability of semiconductor products in plastic enclosures
CN103115868A (en) * 2013-03-07 2013-05-22 中国空间技术研究院 Fixing device for testing pulling-out force of device chip
CN104977254A (en) * 2015-07-20 2015-10-14 深圳市华星光电技术有限公司 Method for comparing adhesive force of composite membrane and determining qualified products
WO2016061477A1 (en) * 2014-10-16 2016-04-21 Sikorsky Aircraft Corporation Coating bond test method and method of making a specimen for testing bond strength of a coating
CN105973801A (en) * 2016-06-23 2016-09-28 扬州赛尔达尼龙制造有限公司 Test method for stretching and peeling of plastic-metal composite material
CN108918264A (en) * 2018-06-29 2018-11-30 上海市建筑科学研究院 Assembled integral concrete construction sealing material filleting adhesive property detection method
DE102015206995B4 (en) 2015-04-17 2024-02-22 Robert Bosch Gmbh Method for determining the adhesive strength of layers of a ceramic sensor element for detecting at least one property of a measurement gas in a measurement gas space

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4856326A (en) * 1987-07-27 1989-08-15 Nec Corporation Apparatus for measuring an adhesion force of a thin film
US4876896A (en) 1986-06-16 1989-10-31 I.W. Industries, Inc. Method of testing protective encapsulation of structural members
US4895028A (en) 1989-01-27 1990-01-23 U.S. Philips Corporation Method of pull-testing wire connectors on an electrical device
US4899581A (en) * 1988-02-19 1990-02-13 Massachusetts Institute Of Technology Method and apparatus for the quantitative measurement of adhesion of thin films
US5337614A (en) 1992-08-20 1994-08-16 Lsi Logic Corporation Fixture for testing mounting integrity of heat sinks on semiconductor packages, and method of testing
US5673586A (en) * 1992-07-08 1997-10-07 Mann; George E. Adhesion and cohesion testing system

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4876896A (en) 1986-06-16 1989-10-31 I.W. Industries, Inc. Method of testing protective encapsulation of structural members
US4856326A (en) * 1987-07-27 1989-08-15 Nec Corporation Apparatus for measuring an adhesion force of a thin film
US4899581A (en) * 1988-02-19 1990-02-13 Massachusetts Institute Of Technology Method and apparatus for the quantitative measurement of adhesion of thin films
US4895028A (en) 1989-01-27 1990-01-23 U.S. Philips Corporation Method of pull-testing wire connectors on an electrical device
US5673586A (en) * 1992-07-08 1997-10-07 Mann; George E. Adhesion and cohesion testing system
US5337614A (en) 1992-08-20 1994-08-16 Lsi Logic Corporation Fixture for testing mounting integrity of heat sinks on semiconductor packages, and method of testing

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6370962B1 (en) * 2000-06-14 2002-04-16 Testing Machines, Inc. Dynamic high speed tensile tester
US20070228591A1 (en) * 2006-02-15 2007-10-04 Airbus France Process for conducting adherence tests for a coating on a substrate
US8096190B2 (en) * 2006-02-15 2012-01-17 Airbus France Process for conducting adherence tests for a coating on a substrate
RU2464583C2 (en) * 2009-11-17 2012-10-20 Государственное образовательное учреждение высшего профессионального образования "Воронежский государственный технический университет" Method for comparative assessment of reliability of semiconductor products in plastic enclosures
CN103115868A (en) * 2013-03-07 2013-05-22 中国空间技术研究院 Fixing device for testing pulling-out force of device chip
CN103115868B (en) * 2013-03-07 2015-01-21 中国空间技术研究院 Fixing device for testing pulling-out force of device chip
WO2016061477A1 (en) * 2014-10-16 2016-04-21 Sikorsky Aircraft Corporation Coating bond test method and method of making a specimen for testing bond strength of a coating
US10048180B2 (en) 2014-10-16 2018-08-14 Sikorsky Aircraft Corporation Coating bond test method and method of making a specimen for testing bond strength of a coating
DE102015206995B4 (en) 2015-04-17 2024-02-22 Robert Bosch Gmbh Method for determining the adhesive strength of layers of a ceramic sensor element for detecting at least one property of a measurement gas in a measurement gas space
CN104977254A (en) * 2015-07-20 2015-10-14 深圳市华星光电技术有限公司 Method for comparing adhesive force of composite membrane and determining qualified products
CN105973801A (en) * 2016-06-23 2016-09-28 扬州赛尔达尼龙制造有限公司 Test method for stretching and peeling of plastic-metal composite material
CN108918264A (en) * 2018-06-29 2018-11-30 上海市建筑科学研究院 Assembled integral concrete construction sealing material filleting adhesive property detection method

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