US5944891A - Method for the heat treatment of ZnSe crystal - Google Patents
Method for the heat treatment of ZnSe crystal Download PDFInfo
- Publication number
- US5944891A US5944891A US08/907,650 US90765097A US5944891A US 5944891 A US5944891 A US 5944891A US 90765097 A US90765097 A US 90765097A US 5944891 A US5944891 A US 5944891A
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- heat treatment
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- znse
- znse crystal
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- 239000013078 crystal Substances 0.000 title claims abstract description 54
- 238000010438 heat treatment Methods 0.000 title claims abstract description 38
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000001816 cooling Methods 0.000 claims abstract description 16
- 239000002244 precipitate Substances 0.000 claims abstract description 11
- 239000003708 ampul Substances 0.000 claims description 20
- 239000010453 quartz Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 238000007789 sealing Methods 0.000 claims 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052740 iodine Inorganic materials 0.000 abstract description 11
- 239000011630 iodine Substances 0.000 abstract description 11
- 239000003795 chemical substances by application Substances 0.000 abstract description 9
- 239000000126 substance Substances 0.000 abstract description 9
- 230000006866 deterioration Effects 0.000 abstract description 4
- 230000003247 decreasing effect Effects 0.000 description 5
- 239000008188 pellet Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- MODGUXHMLLXODK-UHFFFAOYSA-N [Br].CO Chemical compound [Br].CO MODGUXHMLLXODK-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]
Definitions
- This invention relates to a method for decreasing the resistivity of a ZnSe crystal grown by a chemical vapor transport (CVT) method using iodine as a transport agent, comprising subjecting the ZnSe crystal to a heat treatment in a Zn vapor atmosphere.
- CVT chemical vapor transport
- ZnSe crystal has a high resistivity even if containing iodine to be n-type dopant due to self-compensation by Zn vacancies unless the ZnSe crystal is subjected to a heat treatment after the growth.
- this crystal can be caused to have low resistivity by activating iodine through a heat treatment in Zn vapor at a high temperature.
- a cooling rate after the heat treatment is small, a vapor pressure of Zn applied is decreased due to lowering of the temperature and Zn holoes are again increased to increase the resistivity.
- a rapid cooling method has generally been employed after the heat treatment.
- the inventors have found that when the ZnSe crystal after the heat treatment is gradually cooled at a cooling rate of 1° C./min, cracks can be prevented, but precipitates often occur in the crystal so that the ZnSe crystal having predetermined crystallinity cannot be obtained.
- a method for the heat treatment of ZnSe comprising subjecting a ZnSe crystal grown by a chemical vapor transport method using iodine as a transport agent to a heat treatment in a Zn vapor atmosphere and controlling a cooling rate after the heat treatment in 10 to 200° C./min.
- FIG. 1 is a schematic view of an apparatus for the practice of a method for the heat treatment according to the present invention.
- the inventors have made various efforts to develop a method for decreasing the resistivity of a ZnSe crystal grown by a chemical vapor transport method using iodine as a transport agent, and consequently, have found that a heat treatment of the ZnSe crystal and a controlled cooling rate after the heat treatment are effective for this purpose.
- the present invention is based on this finding.
- the present invention provides a method for the heat treatment of ZnSe comprising subjecting a ZnSe crystal grown by a chemical vapor transport method using iodine as a transport agent to a heat treatment in a Zn vapor atmosphere and controlling a cooling rate after the heat treatment in 10 to 200° C./min.
- a ZnSe crystal grown by a chemical vapor transport method using iodine as a transport agent that is, a ZnSe crystal having a high resistivity because of self-compensation by Zn vacancies is subjected to a heat treatment in Zn vapor, thereby causing this crystal to have low resistivity without deterioration of crystallinity thereof.
- ZnSe crystal as an object of the heat treatment is preferably heated at 800 to 1100° C. and a Zn pellet is heated at 750 to 1100° C., in such a manner that a temperature gradient between them be controlled within the range of 0 to 50° C., for a period of time of 50 to 200 hours.
- FIG. 1 is a schematic view of an apparatus for carrying out a method for the heat treatment according to the present invention, in which a ZnSe crystal 1 grown by a chemical vapor transport method using iodine as a transport agent (hereinafter referred to as CVT crystal) is supported by quartz parts 3 in a quartz ampoule 4 and Zn pellet 2 is charged in the bottom of the quartz ampoule 4, followed by closing the quartz ampoule 4 and charging in a heat treatment furnace 5 maintained at predetermined heat treatment conditions.
- CVT crystal chemical vapor transport method using iodine as a transport agent
- a CVT crystal was cut in seven samples each having a size of 5 ⁇ 5 ⁇ 1 mm 3 , each sample 1 was supported by a quartz part 3 and arranged with etched Zn pellet 2 in seven quartz ampoules 4, as shown in FIG. 1.
- the quartz ampoule 4 was evacuated in a pressure of 3 ⁇ 10 -7 Torr and sealed. This quartz ampoule was charged in a heat treatment furnace 5, the crystal part was heated at 1000° C. and the bottom part having the Zn pellet arranged was heated at 980° C., the assembly being thus maintained and heat treated for 100 hours.
- the resulting ZnSe crystals were taken out of the quartz ampoules and were subjected to investigation of specific resistivity, presence or absence of precipitates in the crystals and increase of dislocation densities as compared with before the heat treatment.
- the specific resistivity was measured by the Hall measurements, the precipitate in the crystal was observed by means of Normarski microscope and the dislocation density was investigated by measurement of an etch pit density when etching with a bromine-methanol solution.
- the ZnSe crystal obtained at a cooling rates of 300° C./min was in the form of finely broken pieces and had a number of cracks and increased dislocation density.
- the specific resistivity could not be measured because of finely broken pieces of the crystal.
- the quartz ampoule When the quartz ampoule was taken out of the heat treatment furnace and subjected to rapid cooling by charging it in water, the quartz ampoule was ed and the crystal was also pulverized to give a size of about 1 ⁇ 1 ⁇ 1 mm 3 . In the crystal, there were found no precipitates, but found a number of cracks and an increased dislocation density of from 10 4 cm -2 to at least 10 6 cm -2 . The specific resistivity could not be measured because of finely en pieces of the crystal.
- a low resistivity ZnSe crystal can obtained without occurrence of precipitates and deterioration of the crystallinity by employing the above described constructions.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
An object of the present invention is to provide a method for the heat treatment of a ZnSe crystal whereby the crystal can be prevented from crystallinity deterioration and caused to have low resistivity without occurrence of precipitates in the crystal.
The feature of the present invention consists in a method for the heat treatment of ZnSe comprising subjecting ZnSe crystal grown by a chemical vapor transport method using iodine as a transport agent to a heat treatment in a Zn vapor atmosphere and controlling a cooling rate after the heat treatment in 10 to 200° C./min.
Description
1. Field of the Invention
This invention relates to a method for decreasing the resistivity of a ZnSe crystal grown by a chemical vapor transport (CVT) method using iodine as a transport agent, comprising subjecting the ZnSe crystal to a heat treatment in a Zn vapor atmosphere.
2. Description of the Prior Art
ZnSe crystal has a high resistivity even if containing iodine to be n-type dopant due to self-compensation by Zn vacancies unless the ZnSe crystal is subjected to a heat treatment after the growth. Thus, this crystal can be caused to have low resistivity by activating iodine through a heat treatment in Zn vapor at a high temperature. In this method, however, if a cooling rate after the heat treatment is small, a vapor pressure of Zn applied is decreased due to lowering of the temperature and Zn holoes are again increased to increase the resistivity. Thus, a rapid cooling method has generally been employed after the heat treatment.
For example, it has been reported in "J. of Electronic Materials", Vol. 8, No. 5 (1979), p 619-633 that ZnSe crystal grown by a chemical vapor transport method using iodine as a transport agent and Zn are arranged in two quartz ampoules, one of which is heat treated at 800° C. for 13 hours and another of which is heat treated at 830° C. for 24 hours, and both of them are then charged in an oil at 25° C. and rapidly cooled to obtain ZnSe crystals each having a specific resistivity of 0.12 Ω cm and 0.08 Ω cm.
When the ZnSe crystal after the heat treatment is rapidly cooled in an oil, however, crystallinity thereof is deteriorated, for example, dislocations are increased and ordinarily, cracks occur in the crystal. This is probably due to fact that the temperature of the crystal is rapidly lowered, the temperature gradient in the crystal is increased and thermal stress is generated to deteriorate the crystallinity.
The inventors have found that when the ZnSe crystal after the heat treatment is gradually cooled at a cooling rate of 1° C./min, cracks can be prevented, but precipitates often occur in the crystal so that the ZnSe crystal having predetermined crystallinity cannot be obtained.
It is an object of the present invention to provide a method for the heat treatment of a ZnSe crystal whereby the above described disadvantages can be overcome and the crystal can be prevented from deterioration of crystallinity and caused to have low resistivity without occurrence of precipitates in the crystal.
It is another object of the present invention to provide a method of decreasing the resistivity of a ZnSe crystal grown by a chemical vapor transport method using iodine as a transport agent, comprising subjecting the ZnSe crystal to a heat treatment in a Zn vapor atmosphere.
These objects can be attained by a method for the heat treatment of ZnSe comprising subjecting a ZnSe crystal grown by a chemical vapor transport method using iodine as a transport agent to a heat treatment in a Zn vapor atmosphere and controlling a cooling rate after the heat treatment in 10 to 200° C./min.
The accompanying drawing illustrates the principle and merits of the present invention in detail.
FIG. 1 is a schematic view of an apparatus for the practice of a method for the heat treatment according to the present invention.
The inventors have made various efforts to develop a method for decreasing the resistivity of a ZnSe crystal grown by a chemical vapor transport method using iodine as a transport agent, and consequently, have found that a heat treatment of the ZnSe crystal and a controlled cooling rate after the heat treatment are effective for this purpose. The present invention is based on this finding.
Accordingly, the present invention provides a method for the heat treatment of ZnSe comprising subjecting a ZnSe crystal grown by a chemical vapor transport method using iodine as a transport agent to a heat treatment in a Zn vapor atmosphere and controlling a cooling rate after the heat treatment in 10 to 200° C./min.
According to the method of the present invention, a ZnSe crystal grown by a chemical vapor transport method using iodine as a transport agent, that is, a ZnSe crystal having a high resistivity because of self-compensation by Zn vacancies is subjected to a heat treatment in Zn vapor, thereby causing this crystal to have low resistivity without deterioration of crystallinity thereof. It is required to control the cooling rate after the heat treatment within the range of 10 to 200° C./min. If the cooling rate is less than 10° C./min, the specific resistivity cannot sufficiently be decreased and precipitates occur in the crystal, while if more than 200° C./min, cracks occur in the crystal and dislocation density is increased to deteriorate the crystallinity. This is not favorable.
In the heat treatment of the present invention, ZnSe crystal as an object of the heat treatment is preferably heated at 800 to 1100° C. and a Zn pellet is heated at 750 to 1100° C., in such a manner that a temperature gradient between them be controlled within the range of 0 to 50° C., for a period of time of 50 to 200 hours.
FIG. 1 is a schematic view of an apparatus for carrying out a method for the heat treatment according to the present invention, in which a ZnSe crystal 1 grown by a chemical vapor transport method using iodine as a transport agent (hereinafter referred to as CVT crystal) is supported by quartz parts 3 in a quartz ampoule 4 and Zn pellet 2 is charged in the bottom of the quartz ampoule 4, followed by closing the quartz ampoule 4 and charging in a heat treatment furnace 5 maintained at predetermined heat treatment conditions.
The present invention will be illustrated by the following Examples in detail without limiting the same.
A CVT crystal was cut in seven samples each having a size of 5×5×1 mm3, each sample 1 was supported by a quartz part 3 and arranged with etched Zn pellet 2 in seven quartz ampoules 4, as shown in FIG. 1. The quartz ampoule 4 was evacuated in a pressure of 3×10-7 Torr and sealed. This quartz ampoule was charged in a heat treatment furnace 5, the crystal part was heated at 1000° C. and the bottom part having the Zn pellet arranged was heated at 980° C., the assembly being thus maintained and heat treated for 100 hours.
Six of the seven quartz ampoules were maintained in the heat treatment furnace and cooled to room temperature in such a manner that the cooling rates at the crystal parts were respectively adjusted to 1° C./min, 10° C./min, 20° C./min, 100° C./min, 200° C./min and 300° C./min. The other quartz ampoule was taken out of the heat treatment furnace and subjected to rapid cooling by charging in a sufficient amount of water at room temperature.
The resulting ZnSe crystals were taken out of the quartz ampoules and were subjected to investigation of specific resistivity, presence or absence of precipitates in the crystals and increase of dislocation densities as compared with before the heat treatment.
The specific resistivity was measured by the Hall measurements, the precipitate in the crystal was observed by means of Normarski microscope and the dislocation density was investigated by measurement of an etch pit density when etching with a bromine-methanol solution.
In the ZnSe crystal obtained at a cooling rate of 1° C./min, there were found linear precipitates with a high density in the whole crystal and no significant increase of the dislocation density. The specific resistivity was in a range of 0.07 to 0.08 Ω cm.
In the ZnSe crystals obtained at cooling rates of 10 to 200° C./min, there were found no precipitates in all the samples, nor significant increase of the dislocation densities. The specific resistivity could be lowered to a range of 0.04 to 0.05 Ω cm.
The ZnSe crystal obtained at a cooling rates of 300° C./min was in the form of finely broken pieces and had a number of cracks and increased dislocation density. The specific resistivity could not be measured because of finely broken pieces of the crystal.
When the quartz ampoule was taken out of the heat treatment furnace and subjected to rapid cooling by charging it in water, the quartz ampoule was ed and the crystal was also pulverized to give a size of about 1×1×1 mm3. In the crystal, there were found no precipitates, but found a number of cracks and an increased dislocation density of from 104 cm-2 to at least 106 cm-2. The specific resistivity could not be measured because of finely en pieces of the crystal.
Advantages of the Invention
According to the present invention, a low resistivity ZnSe crystal can obtained without occurrence of precipitates and deterioration of the crystallinity by employing the above described constructions.
Claims (5)
1. A method for heat treating a ZnSe crystal, comprising the steps of:
(a) placing a ZnSe crystal in an ampoule having a top and a bottom;
(b) first charging Zn in the bottom of the ampoule;
(c) evacuating air from the ampoule;
(d) sealing the ampoule;
(e) second charging the ampoule in a heat treatment furnace by applying a first temperature to the top of the ampoule and a second temperature to the bottom of the ampoule, the first temperature being higher than the second temperature; and
(f) controlling the cooling rate of the ZnSe crystal, after the heat treatment in a range of 10° C./min to 200° C./min, whereby the occurrence of precipitates is suppressed.
2. A method according to claim 1, wherein the second charging is carried out by heating the top of the ampoule at a temperature of 800 to 1100° C. and the bottom of the ampoule at a temperature of 750 to 1100° C.
3. A method according to claim 1, wherein the temperature difference between the top and the bottom of the ampoule is in the range of 0 to 50° C.
4. A method according to claim 1, wherein the ampoule is a quartz ampoule.
5. A method according to claim 2, wherein the second charging is carried out for 50 to 200 hours.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/335,763 US6132506A (en) | 1996-08-12 | 1999-06-18 | Method for the heat treatment of ZnSe crystal |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21232996A JP3439302B2 (en) | 1996-08-12 | 1996-08-12 | Heat treatment method for ZnSe crystal |
| JP8-212329 | 1996-08-12 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US09/335,763 Continuation US6132506A (en) | 1996-08-12 | 1999-06-18 | Method for the heat treatment of ZnSe crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US5944891A true US5944891A (en) | 1999-08-31 |
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Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US08/907,650 Expired - Fee Related US5944891A (en) | 1996-08-12 | 1997-08-11 | Method for the heat treatment of ZnSe crystal |
| US09/335,763 Expired - Fee Related US6132506A (en) | 1996-08-12 | 1999-06-18 | Method for the heat treatment of ZnSe crystal |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US09/335,763 Expired - Fee Related US6132506A (en) | 1996-08-12 | 1999-06-18 | Method for the heat treatment of ZnSe crystal |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US5944891A (en) |
| EP (1) | EP0826800B1 (en) |
| JP (1) | JP3439302B2 (en) |
| KR (1) | KR19980018445A (en) |
| CA (1) | CA2212653C (en) |
| DE (1) | DE69705469T2 (en) |
| TW (1) | TW425438B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6132506A (en) * | 1996-08-12 | 2000-10-17 | Sumitomo Electric Industries, Ltd. | Method for the heat treatment of ZnSe crystal |
| EP4215649A1 (en) | 2022-01-24 | 2023-07-26 | Ivan Timokhin | Preparation of shaped crystalline layers by use of the inner shape/surface of the ampule as a shape forming surface |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001332506A (en) * | 2000-05-19 | 2001-11-30 | Sumitomo Electric Ind Ltd | Heat treatment method for ZnSe crystal substrate, heat treated substrate and light emitting device |
| JP2003124235A (en) * | 2001-10-17 | 2003-04-25 | Sumitomo Electric Ind Ltd | II-VI compound semiconductor, heat treatment method therefor and heat treatment apparatus therefor |
| MD4266C1 (en) * | 2011-03-17 | 2014-07-31 | Государственный Университет Молд0 | Method for producing the ZnSe single crystal |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4584053A (en) * | 1983-06-29 | 1986-04-22 | Sumitomo Electric Industries, Ltd. | Process for preparing ZnSe single crystal |
| EP0316161A2 (en) * | 1987-11-10 | 1989-05-17 | Kabushiki Kaisha Toshiba | Method of heat treatment of a groups II-VI compound semiconductor |
| US5204283A (en) * | 1986-12-12 | 1993-04-20 | Sharp Kabushiki Kaisha | Method of growth II-VI semiconducting compounds |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63151700A (en) * | 1986-12-12 | 1988-06-24 | Sharp Corp | Method for growing ii-vi compound semiconductor |
| JPH01264990A (en) * | 1987-11-10 | 1989-10-23 | Toshiba Corp | Method of refinning ii-vi compound semiconductor, production of ii-vi compound semiconductor single crystal and production of semiconductor light emitting element formed by using semiconductor single crystal obtained by the same method as substrate |
| JPH01242499A (en) * | 1988-03-25 | 1989-09-27 | Nippon Sheet Glass Co Ltd | Method of decreasing dislocation of znse single crystal |
| JP3439302B2 (en) * | 1996-08-12 | 2003-08-25 | 住友電気工業株式会社 | Heat treatment method for ZnSe crystal |
-
1996
- 1996-08-12 JP JP21232996A patent/JP3439302B2/en not_active Expired - Fee Related
-
1997
- 1997-07-03 TW TW086109384A patent/TW425438B/en not_active IP Right Cessation
- 1997-08-07 KR KR1019970037665A patent/KR19980018445A/en not_active Ceased
- 1997-08-08 CA CA002212653A patent/CA2212653C/en not_active Expired - Fee Related
- 1997-08-11 US US08/907,650 patent/US5944891A/en not_active Expired - Fee Related
- 1997-08-12 EP EP97306116A patent/EP0826800B1/en not_active Expired - Lifetime
- 1997-08-12 DE DE69705469T patent/DE69705469T2/en not_active Expired - Fee Related
-
1999
- 1999-06-18 US US09/335,763 patent/US6132506A/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4584053A (en) * | 1983-06-29 | 1986-04-22 | Sumitomo Electric Industries, Ltd. | Process for preparing ZnSe single crystal |
| US5204283A (en) * | 1986-12-12 | 1993-04-20 | Sharp Kabushiki Kaisha | Method of growth II-VI semiconducting compounds |
| EP0316161A2 (en) * | 1987-11-10 | 1989-05-17 | Kabushiki Kaisha Toshiba | Method of heat treatment of a groups II-VI compound semiconductor |
| US4960721A (en) * | 1987-11-10 | 1990-10-02 | Kabushiki Kaisha Toshiba | Method for purifying group II-IV compound semiconductors |
Non-Patent Citations (10)
| Title |
|---|
| "Growth of cubic ZnS, ZnSe and ZnSx Se1-x single crystal by iodine transport". Journal of crystal growth 47 (1979) p. 326-334. |
| Boettcher et al., "Zinc Selenide single crystal growth by chemical transport reactions" Journal of Crystal Growth, vol. 146, No. 1/4, Jan. 1, 1995, pp. 53-58, XP000511842. |
| Boettcher et al., Zinc Selenide single crystal growth by chemical transport reactions Journal of Crystal Growth, vol. 146, No. 1/4 , Jan. 1, 1995, pp. 53 58, XP000511842. * |
| Growth of cubic ZnS, ZnSe and ZnS x Se 1 x single crystal by iodine transport . Journal of crystal growth 47 (1979) p. 326 334. * |
| Korostelin et al., "vapour growth and characterisation of bulk ZnSe single crystals" Journal of Crystal Growth, vol. 161, Apr. 1, 1996, Amsterdam NL, pp. 51-59, XP000626732. |
| Korostelin et al., vapour growth and characterisation of bulk ZnSe single crystals Journal of Crystal Growth, vol. 161, Apr. 1, 1996, Amsterdam NL, pp. 51 59, XP000626732. * |
| Koyama et al., "etch pit studies of ZnSe crystal grown by the iodine transport method" Journal of Crystal Growth, vol. 96, No. 1, May 1989, Amsterdam NL, pp. 217-220, XP000008667. |
| Koyama et al., etch pit studies of ZnSe crystal grown by the iodine transport method Journal of Crystal Growth, vol. 96, No. 1, May 1989, Amsterdam NL, pp. 217 220, XP000008667. * |
| Newbury et al., "the effect of annealing treatment on the microstructure or layers of zinc selenide deposited onto 100 germanium surfaces" Thin Solid Films., vol. 22, No. 3, Jul. 1974, Lausanne Ch, pp. 323-330, XP002046979. |
| Newbury et al., the effect of annealing treatment on the microstructure or layers of zinc selenide deposited onto 100 germanium surfaces Thin Solid Films., vol. 22, No. 3, Jul. 1974, Lausanne Ch, pp. 323 330, XP002046979. * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6132506A (en) * | 1996-08-12 | 2000-10-17 | Sumitomo Electric Industries, Ltd. | Method for the heat treatment of ZnSe crystal |
| EP4215649A1 (en) | 2022-01-24 | 2023-07-26 | Ivan Timokhin | Preparation of shaped crystalline layers by use of the inner shape/surface of the ampule as a shape forming surface |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH1059800A (en) | 1998-03-03 |
| JP3439302B2 (en) | 2003-08-25 |
| DE69705469T2 (en) | 2002-04-18 |
| EP0826800A1 (en) | 1998-03-04 |
| EP0826800B1 (en) | 2001-07-04 |
| CA2212653C (en) | 2004-09-28 |
| KR19980018445A (en) | 1998-06-05 |
| TW425438B (en) | 2001-03-11 |
| US6132506A (en) | 2000-10-17 |
| DE69705469D1 (en) | 2001-08-09 |
| CA2212653A1 (en) | 1998-02-12 |
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