US5817437A - Method for detecting phase error of a phase shift mask - Google Patents

Method for detecting phase error of a phase shift mask Download PDF

Info

Publication number
US5817437A
US5817437A US08/725,162 US72516296A US5817437A US 5817437 A US5817437 A US 5817437A US 72516296 A US72516296 A US 72516296A US 5817437 A US5817437 A US 5817437A
Authority
US
United States
Prior art keywords
phase
patterns
phase shift
shifted
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
US08/725,162
Inventor
Chang Nam Ahn
Hung Eil Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Assigned to HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. reassignment HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: AHN, CHANG NAM, KIM, HUNG EIL
Application granted granted Critical
Publication of US5817437A publication Critical patent/US5817437A/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Definitions

  • the present invention relates to a method for detecting the phase error of a phase shift mask, and more particularly to an improvement in accuracy and simplicity in detecting the phase error of a phase shift mask.
  • phase error of a phase shift mask is detected during fabrication of the mask.
  • a method for detecting the phase error of a phase shift mask comprises the steps of:
  • a transparent substrate that includes a lower surface
  • etching the lower surface of the transparent substrate to form, at a regular spacing, a plurality of phase shift patterns, each phase shift pattern having a predetermined width and serving to shift the light transmitted through predetermined regions of the transparent substrate; forming a phase shift mask in which a light screen with a predetermined width is located between the predetermined regions of the transparent substrate and the phase shift patterns; forming a pattern on a wafer using the phase shift mask; comparing sizes of patterns in which phase is shifted with sizes of patterns in which phase is not shifted, to arrive at a difference in pattern size; and detecting the phase error by using the difference in pattern size.
  • FIG. 1 is a schematic plan view of a phase shift mask illustrating the principle of detecting the phase error, according to the present invention
  • FIG. 2 is a schematic cross sectional view taken along line II--II of FIG. 1;
  • FIG. 3 shows the intensity distribution of light plotted with regard to the pattern's position when phase error occurs by use of the phase shift mask of FIG. 1;
  • FIG. 4 is a graph rearranging the plot of FIG. 3;
  • FIG. 5 is a plan view of a mask pattern for detecting phase error of a phase shift mask, in accordance with a first embodiment of the present invention
  • FIG. 6 is a plan view of a mask pattern for detecting phase error of a phase shift mask, in accordance with a second embodiment of the present invention.
  • FIG. 7 is a plan view of a mask pattern for detecting phase error of a phase shift mask, in accordance with a third embodiment of the present invention.
  • FIG. 1 shows a typical phase shift mask in a top view while its sectional view, taken along through line II--II of FIG. 1, is in FIG. 2.
  • phase shift mask as shown in FIG. 1, is generally used to form line and space patterns. From the shape shown in FIG. 2, the phase shift mask of FIG. 1 is found to be of a quartz etch type in which the lower surface of a transparent quartz substrate is selectively etched.
  • This phase shift mask comprises a quartz substrate 10, a chrome part 20 attached on the lower surface of the substrate, which functions as a light screen, and a shift region 30 which shifts light in the inner direction of the chrome part 20.
  • the phase angle is typically 180°. However, if the depth of etch in the quartz substrate is not accurate, the phase angle deviates from 180°.
  • the intensities of light resulting from the phase error are distributed with regard to the position of pattern, as shown in FIG. 3.
  • the plot designated as reference numeral "40" shows that the intensity distribution of light is most focused while the plot designated as reference numeral "50” does so at defocus.
  • the position of the pattern corresponding to the chrome line 20 moves away a certain distance.
  • the distance which the pattern moves away, ⁇ X is proportional to the defocus and the inaccurate extent of the phase angle.
  • FIG. 4 is a graph rearranging the above phenomenon. That is, as shown in FIG. 4, the width of the pattern is in proportion to the defocus.
  • Line 55 shows for the case wherein the phase angle is smaller than 180°.
  • line 56 has a phase angle of 180° while line 57 has a phase angle larger than 180°.
  • phase error of the phase shift mask does not vary with defocus, that there seems to be no phase error.
  • FIG. 5 is a mask pattern for detecting the phase error of a phase shift mask, according to a first embodiment of the present invention.
  • a mask pattern 100 for detecting the phase error of phase shift mask has a matrix layout in which a plurality of rectangular phase shift patterns 130, each with a certain width W1, are diagonally arranged.
  • the other transparent substrate regions are diagonally positioned with a certain width W2.
  • This pattern 100 for detecting phase error is set on a predetermined position of the phase shift mask. Then, patterning is carried out on a wafer (not shown). Measurements are made for the widths of the pattern for detecting phase error, W1 and W2, by defocuses and they are compared with each other. If W1 and W2 are within an allowable error, there is no phase error.
  • the pattern 200 comprises a plurality of repeating forms in which an I-shaped phase shift pattern 230 with a certain width is sandwiched between two light screens 220, each being flanked by a transparent substrate region 210.
  • FIG. 7 a pattern for detecting phase error, according to a third embodiment of the present invention is shown.
  • a plurality of rectangular phase shift patterns 330 are arranged at a regular distance in row and in column.
  • Rectangular transparent substrate regions 310 are located between the phase shift patterns 330.
  • Both the phase shift patterns 330 and the parent substrate regions 310 are surrounded by a light screen 320.
  • the phase shift patterns and the transparent substrate regions may be arranged at the same distance or different distances.
  • the phase shift patterns 330 and the transparent substrate regions 310 are rectangular or square. It should be noted that the phase shift patterns 330 may serve to form contact holes.
  • Patterning is made on a wafer, using the phase shift masks according to the present invention.
  • the employed photoresist is of a positive type
  • the space sizes of the pattern where a phase shift occurs are measured and compared with those of the pattern where no phase shift occurs, by defocuses, to detect the phase error.
  • the detecting method of phase error according to the present invention is very advantageous in some aspects. Detecting the phase error of a phase shift mask can be easily and effectively accomplished by comparing the sizes of the patterns in which phase shift occurs with those of the patterns where the phase does not shift. In addition, the method according to the present invention is very useful for the fabrication of highly integrated semiconductor devices by virtue of its accuracy in detecting the phase error.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

A method for detecting the phase error of a phase shift mask simply and with ease is disclosed and comprises the steps of: arranging a plurality of phase shift patterns, each having a predetermined width and serving to shift the light transmitted through predetermined regions of a transparent substrate of the phase shift mask, at a regular space on the transparent substrate; arranging a pattern for detecting phase error in which a light screen with a predetermined width is located between the predetermined regions of the transparent substrate and the phase shift mask; patterning a wafer by use of the phase shift mask and the patterns for detecting phase error; comparing the sizes by defocuses of the patterns in which phase is shifted with those of the patterns in which phase is not shifted; and utilizing the difference in the pattern size to detect the phase error.

Description

BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a method for detecting the phase error of a phase shift mask, and more particularly to an improvement in accuracy and simplicity in detecting the phase error of a phase shift mask.
2. Description of the Prior Art
In general, the phase error of a phase shift mask is detected during fabrication of the mask.
Many techniques were researched and developed to detect the phase error but, until recently, it has been found that there is no detecting method in which patterns are transcribed on a wafer.
SUMMARY OF THE INVENTION
Therefore, it is an objective of the present invention to provide a method for detecting the phase error of a phase shift mask, which takes advantage of the phenomenon that the patterns exposed on a wafer are shifted by defocus whereby the phase error can be easily detected.
It is another objective of the present invention to provide a method for accurately detecting the phase error of a phase shift mask, applicable for the fabrication of highly integrated semiconductor devices.
In accordance with the present invention, a method for detecting the phase error of a phase shift mask, comprises the steps of:
providing a transparent substrate that includes a lower surface; etching the lower surface of the transparent substrate to form, at a regular spacing, a plurality of phase shift patterns, each phase shift pattern having a predetermined width and serving to shift the light transmitted through predetermined regions of the transparent substrate; forming a phase shift mask in which a light screen with a predetermined width is located between the predetermined regions of the transparent substrate and the phase shift patterns; forming a pattern on a wafer using the phase shift mask; comparing sizes of patterns in which phase is shifted with sizes of patterns in which phase is not shifted, to arrive at a difference in pattern size; and detecting the phase error by using the difference in pattern size.
BRIEF DESCRIPTION OF THE DRAWINGS
Other objects and aspects of the invention will become apparent from the following description of embodiments with reference to the accompanying drawings in which:
FIG. 1 is a schematic plan view of a phase shift mask illustrating the principle of detecting the phase error, according to the present invention;
FIG. 2 is a schematic cross sectional view taken along line II--II of FIG. 1;
FIG. 3 shows the intensity distribution of light plotted with regard to the pattern's position when phase error occurs by use of the phase shift mask of FIG. 1;
FIG. 4 is a graph rearranging the plot of FIG. 3;
FIG. 5 is a plan view of a mask pattern for detecting phase error of a phase shift mask, in accordance with a first embodiment of the present invention;
FIG. 6 is a plan view of a mask pattern for detecting phase error of a phase shift mask, in accordance with a second embodiment of the present invention; and
FIG. 7 is a plan view of a mask pattern for detecting phase error of a phase shift mask, in accordance with a third embodiment of the present invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
The application of the preferred embodiments of the present invention is best understood with reference to the accompanying drawings.
FIG. 1 shows a typical phase shift mask in a top view while its sectional view, taken along through line II--II of FIG. 1, is in FIG. 2.
Such a phase shift mask, as shown in FIG. 1, is generally used to form line and space patterns. From the shape shown in FIG. 2, the phase shift mask of FIG. 1 is found to be of a quartz etch type in which the lower surface of a transparent quartz substrate is selectively etched. This phase shift mask comprises a quartz substrate 10, a chrome part 20 attached on the lower surface of the substrate, which functions as a light screen, and a shift region 30 which shifts light in the inner direction of the chrome part 20.
Where such a phase shift mask is applied, the phase angle is typically 180°. However, if the depth of etch in the quartz substrate is not accurate, the phase angle deviates from 180°.
When the above phase shift mask is used, the intensities of light resulting from the phase error are distributed with regard to the position of pattern, as shown in FIG. 3.
In FIG. 3, the plot designated as reference numeral "40" shows that the intensity distribution of light is most focused while the plot designated as reference numeral "50" does so at defocus. As is apparent from the figure, the position of the pattern corresponding to the chrome line 20 moves away a certain distance. The distance which the pattern moves away, ΔX, is proportional to the defocus and the inaccurate extent of the phase angle.
FIG. 4 is a graph rearranging the above phenomenon. That is, as shown in FIG. 4, the width of the pattern is in proportion to the defocus. Line 55 shows for the case wherein the phase angle is smaller than 180°. And line 56 has a phase angle of 180° while line 57 has a phase angle larger than 180°.
As seen in FIG. 4, if the phase error of the phase shift mask does not vary with defocus, that there seems to be no phase error.
FIG. 5 is a mask pattern for detecting the phase error of a phase shift mask, according to a first embodiment of the present invention. As shown in FIG. 5, a mask pattern 100 for detecting the phase error of phase shift mask has a matrix layout in which a plurality of rectangular phase shift patterns 130, each with a certain width W1, are diagonally arranged. Correspondingly, the other transparent substrate regions are diagonally positioned with a certain width W2. In the mask pattern 100, there is a light screen 120 between the rectangular phase shift patterns 130 and the transparent substrate regions 110.
This pattern 100 for detecting phase error is set on a predetermined position of the phase shift mask. Then, patterning is carried out on a wafer (not shown). Measurements are made for the widths of the pattern for detecting phase error, W1 and W2, by defocuses and they are compared with each other. If W1 and W2 are within an allowable error, there is no phase error.
Referring to FIG. 6, a pattern for detecting phase error, according to a second embodiment of the present invention is shown. As illustrated in FIG. 6, the pattern 200 comprises a plurality of repeating forms in which an I-shaped phase shift pattern 230 with a certain width is sandwiched between two light screens 220, each being flanked by a transparent substrate region 210.
Turning now to FIG. 7, a pattern for detecting phase error, according to a third embodiment of the present invention is shown. In the pattern 300, as seen in FIG. 7, a plurality of rectangular phase shift patterns 330 are arranged at a regular distance in row and in column. Rectangular transparent substrate regions 310 are located between the phase shift patterns 330. Both the phase shift patterns 330 and the parent substrate regions 310 are surrounded by a light screen 320.
According to the present invention, the phase shift patterns and the transparent substrate regions may be arranged at the same distance or different distances. As for shape, the phase shift patterns 330 and the transparent substrate regions 310 are rectangular or square. It should be noted that the phase shift patterns 330 may serve to form contact holes.
Patterning is made on a wafer, using the phase shift masks according to the present invention. In the case that the employed photoresist is of a positive type, the space sizes of the pattern where a phase shift occurs are measured and compared with those of the pattern where no phase shift occurs, by defocuses, to detect the phase error.
For negative photoresist, it is effective for the detection of phase error that the line size of the pattern where phase is shifted on the wafer is compared with that of the pattern where phase is not shifted, by defocuses.
As described above, the detecting method of phase error according to the present invention is very advantageous in some aspects. Detecting the phase error of a phase shift mask can be easily and effectively accomplished by comparing the sizes of the patterns in which phase shift occurs with those of the patterns where the phase does not shift. In addition, the method according to the present invention is very useful for the fabrication of highly integrated semiconductor devices by virtue of its accuracy in detecting the phase error.
Although the preferred embodiments of the invention have been disclosed for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims.

Claims (19)

What is claimed is:
1. A method for detecting a phase error of a phase shift mask, comprising:
a) providing a transparent substrate that includes a lower surface;
b) etching the lower surface of the transparent substrate to form, at a regular spacing, a plurality of phase shift patterns, each phase shift pattern having a predetermined width and serving to shift the light transmitted through predetermined regions of the transparent substrate;
c) forming a phase shift mask in which a light screen with a predetermined width is located between the predetermined regions of the transparent substrate and the phase shift patterns;
d) forming a pattern on a wafer using the phase shift mask;
e) comparing (A) sizes of patterns in which phase is shifted with (B) sizes of patterns in which phase is not shifted, to arrive at a difference in pattern size; and
f) detecting the phase error by using the difference in pattern size.
2. The method of claim 1, wherein:
the light screen includes chrome.
3. The method of claim 1, wherein:
the light screen has a line width of about 0.1 μm or more.
4. The method of claim 1, wherein:
the pattern forming step is carried out with a positive photoresist; and
the comparing step is carried out for a size of the spaces of patterns in which phase is shifted with a size of the spaces of patterns in which phase is not shifted.
5. The method of claim 1, wherein:
the pattern forming step is carried out with a negative photoresist; and
the comparing step is carried out for a size of the line of patterns in which phase is shifted with a size of the line of patterns in which phase is not shifted.
6. The method of claim 1, wherein:
the phase shift patterns are arranged diagonally to form a matrix layout.
7. The method of claim 6, wherein:
each of the phase shift patterns has a rectangular form with a predetermined width.
8. The method of claim 1, wherein the phase shift mask includes:
a plurality of repeating forms in which an I-shaped phase shift pattern with a certain width is sandwiched between two light screens, each being flanked by a transparent substrate region.
9. The method of claim 8, wherein:
the light screen includes chrome.
10. The method of claim 8, wherein:
the light screen has a line width of about 0.1 μm or more.
11. The method of claim 8, wherein:
the pattern forming step is carried out with a positive photoresist; and
the comparing step is carried out for a size of the spaces of patterns in which phase is shifted with a size of the spaces of patterns in which phase is not shifted.
12. The method of claim 8, wherein:
the pattern forming step is carried out with a negative photoresist; and
the comparing step is carried out for a size of the line of patterns in which phase is shifted with a size of the line of patterns in which phase is not shifted.
13. The method of claim 1, wherein:
a) the phase shift mask includes:
1) a plurality of rectangular phase shift patterns; and
2) a plurality of rectangular transparent substrate regions; and
b) said phase shift patterns and said transparent substrate regions alternate at a regular distance in rows and in columns, and are surrounded by a light screen.
14. The method of claim 13, wherein:
the light screen includes chrome.
15. The method of claim 13, wherein:
the light screen has a line width of about 0.1 μm or more.
16. The method of claim 13, wherein:
the pattern forming step is carried out with a positive photoresist; and
the comparing step is carried out for a size of the spaces of patterns in which phase is shifted with a size of the spaces of patterns in which phase is not shifted.
17. The method of claim 13, wherein:
the pattern forming step is carried out with a negative photoresist; and
the comparing step is carried out for a size of the line of patterns in which phase is shifted with a size of the line of patterns in which phase is not shifted.
18. The method of claim 1, wherein the pattern forming step constitutes:
forming a contact hole pattern.
19. The method of claim 1, wherein the pattern forming step constitutes:
forming a line and space pattern.
US08/725,162 1995-10-04 1996-10-03 Method for detecting phase error of a phase shift mask Expired - Fee Related US5817437A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR95-33878 1995-10-04
KR1019950033878A KR0172789B1 (en) 1995-10-04 1995-10-04 Phase error detection method of phase inversion mask

Publications (1)

Publication Number Publication Date
US5817437A true US5817437A (en) 1998-10-06

Family

ID=19429165

Family Applications (1)

Application Number Title Priority Date Filing Date
US08/725,162 Expired - Fee Related US5817437A (en) 1995-10-04 1996-10-03 Method for detecting phase error of a phase shift mask

Country Status (5)

Country Link
US (1) US5817437A (en)
JP (1) JP2866353B2 (en)
KR (1) KR0172789B1 (en)
CN (1) CN1090812C (en)
TW (1) TW409277B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6727026B2 (en) 2000-03-24 2004-04-27 Kabushiki Kaisha Toshiba Semiconductor integrated circuit patterns
KR100517112B1 (en) * 2002-04-12 2005-09-27 김희태 A microwell plate protein chip using membrane as a support, a method for the preparation thereof and a method for detection of proteins using the chip
US20070196741A1 (en) * 2006-02-20 2007-08-23 Hibbs Michael S Phase Calibration for Attenuating Phase-Shift Masks

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5382484A (en) * 1992-08-21 1995-01-17 Mitsubishi Denki Kabushiki Kaisha Method of correcting defects in the pattern of phase shift mask
US5439767A (en) * 1993-02-17 1995-08-08 Nec Corporation Phase shift mask and its inspection method
US5536603A (en) * 1993-12-21 1996-07-16 Kabushiki Kaisha Toshiba Phase shift mask and method of fabricating the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5382484A (en) * 1992-08-21 1995-01-17 Mitsubishi Denki Kabushiki Kaisha Method of correcting defects in the pattern of phase shift mask
US5439767A (en) * 1993-02-17 1995-08-08 Nec Corporation Phase shift mask and its inspection method
US5536603A (en) * 1993-12-21 1996-07-16 Kabushiki Kaisha Toshiba Phase shift mask and method of fabricating the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6727026B2 (en) 2000-03-24 2004-04-27 Kabushiki Kaisha Toshiba Semiconductor integrated circuit patterns
KR100517112B1 (en) * 2002-04-12 2005-09-27 김희태 A microwell plate protein chip using membrane as a support, a method for the preparation thereof and a method for detection of proteins using the chip
US20070196741A1 (en) * 2006-02-20 2007-08-23 Hibbs Michael S Phase Calibration for Attenuating Phase-Shift Masks
US7642016B2 (en) 2006-02-20 2010-01-05 International Business Machines Corporation Phase calibration for attenuating phase-shift masks

Also Published As

Publication number Publication date
CN1090812C (en) 2002-09-11
TW409277B (en) 2000-10-21
JPH09127679A (en) 1997-05-16
KR970022500A (en) 1997-05-28
KR0172789B1 (en) 1999-03-20
JP2866353B2 (en) 1999-03-08
CN1152186A (en) 1997-06-18

Similar Documents

Publication Publication Date Title
US8143731B2 (en) Integrated alignment and overlay mark
US6440616B1 (en) Mask and method for focus monitoring
US11378892B2 (en) Overlay-shift measurement system
US5023188A (en) Method of determining the depth of trenches formed in a semiconductor wafer
KR100519252B1 (en) Overlay mark, method for forming overlay mark and mearsurement method for overlay
US4433911A (en) Method of evaluating measure precision of patterns and photomask therefor
US6498401B2 (en) Alignment mark set and method of measuring alignment accuracy
KR100598258B1 (en) Phase shift mask and methods of manufacture
KR950015703A (en) Manufacturing Method of Semiconductor Device Using Measurement Mark Pattern
US20090075178A1 (en) Mask with Registration Marks and Method of Fabricating Integrated Circuits
US7999399B2 (en) Overlay vernier key and method for fabricating the same
US5817437A (en) Method for detecting phase error of a phase shift mask
US7754396B2 (en) Mask with focus measurement pattern and method for measuring focus value in exposure process using the same
JPS5846054B2 (en) photo mask
US7136520B2 (en) Method of checking alignment accuracy of patterns on stacked semiconductor layers
JP2000010254A (en) Halftone phase shift mask and method of measuring misalignment measurement mark
US7670922B2 (en) Method of measuring alignment of measurement pattern
KR0172557B1 (en) Semiconductor device with overlap mark
KR20080055365A (en) Overlay vernier of a semiconductor device and a method of forming the same
KR100401523B1 (en) A method of forming pattern for measuring overlay in exposing process of semiconductor device
KR0131751Y1 (en) Test patterning reticle for measuring top tilt
KR0168152B1 (en) Vernier for superimposition measurement inserted into the reticle
TW202407460A (en) Method of signal enhancement for alignment patterns
KR940004993B1 (en) Photo and etch bias measurement display apparatus
JPH0494522A (en) Alignment mark structure

Legal Events

Date Code Title Description
AS Assignment

Owner name: HYUNDAI ELECTRONICS INDUSTRIES CO., LTD., KOREA, R

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:AHN, CHANG NAM;KIM, HUNG EIL;REEL/FRAME:008256/0978

Effective date: 19960920

FEPP Fee payment procedure

Free format text: PAYER NUMBER DE-ASSIGNED (ORIGINAL EVENT CODE: RMPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

FPAY Fee payment

Year of fee payment: 4

FPAY Fee payment

Year of fee payment: 8

FEPP Fee payment procedure

Free format text: PAYER NUMBER DE-ASSIGNED (ORIGINAL EVENT CODE: RMPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

REMI Maintenance fee reminder mailed
LAPS Lapse for failure to pay maintenance fees
LAPS Lapse for failure to pay maintenance fees

Free format text: PATENT EXPIRED FOR FAILURE TO PAY MAINTENANCE FEES (ORIGINAL EVENT CODE: EXP.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

STCH Information on status: patent discontinuation

Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362

FP Lapsed due to failure to pay maintenance fee

Effective date: 20101006