US5241987A - Process gas supplying apparatus - Google Patents
Process gas supplying apparatus Download PDFInfo
- Publication number
- US5241987A US5241987A US07/773,893 US77389391A US5241987A US 5241987 A US5241987 A US 5241987A US 77389391 A US77389391 A US 77389391A US 5241987 A US5241987 A US 5241987A
- Authority
- US
- United States
- Prior art keywords
- gas
- line
- way valve
- diluting
- process gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims abstract description 89
- 238000007865 diluting Methods 0.000 claims abstract description 31
- 239000000463 material Substances 0.000 claims abstract description 7
- 239000011368 organic material Substances 0.000 claims abstract description 5
- 238000010790 dilution Methods 0.000 claims description 22
- 239000012895 dilution Substances 0.000 claims description 22
- 238000011144 upstream manufacturing Methods 0.000 claims 1
- 239000002184 metal Substances 0.000 abstract description 12
- 229910052751 metal Inorganic materials 0.000 abstract description 12
- 238000011109 contamination Methods 0.000 abstract description 4
- 238000002156 mixing Methods 0.000 abstract description 3
- 239000000919 ceramic Substances 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 156
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 31
- 238000010926 purge Methods 0.000 description 17
- 239000010408 film Substances 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 230000007423 decrease Effects 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000009719 polyimide resin Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- -1 Si3 H5 Chemical compound 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 229910000070 arsenic hydride Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000003682 fluorination reaction Methods 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- RECVMTHOQWMYFX-UHFFFAOYSA-N oxygen(1+) dihydride Chemical compound [OH2+] RECVMTHOQWMYFX-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
- B01F23/10—Mixing gases with gases
- B01F23/19—Mixing systems, i.e. flow charts or diagrams; Arrangements, e.g. comprising controlling means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
- B01F23/20—Mixing gases with liquids
- B01F23/29—Mixing systems, i.e. flow charts or diagrams
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/8593—Systems
- Y10T137/87249—Multiple inlet with multiple outlet
Definitions
- FIG. 7(A), (B), (C) and (D) show the change in water content contained in a purge gas when a metal diaphragm valve which sheet part is of different kind is purged at room temperature.
- the experiments were carried out by making Ar gas flow at a rate of 1.2 1/min through a metal diaphragm valve, and the water content contained in the outlet Ar gas was measured by APIMS (Ambient Pressure Ionizing Mass Spectroscopy).
- FIG. 10 shows the results of MID mode measurements of the APIMS (a method to simultaneously measure the behaviour of several ions).
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
- Accessories For Mixers (AREA)
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Q.sub.1 +Q.sub.2 =Q.sub.T (1)
100×Q.sub.1 /(Q.sub.1 +Q.sub.2)=A (2)
Q.sub.1 +Q.sub.2 =Q'.sub.T (3)
100×Q.sub.2 / (Q.sub.2 +Q.sub.5)
{100×Q.sub.2 / (Q.sub.2 +Q.sub.5)}×(Q.sub.3 / Q'.sub.T)=100×Q.sub.2 ×Q.sub.3 / (Q.sub.3 +Q.sub.4)×(Q.sub.1 +Q.sub.3) (4)
Claims (7)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1-107979 | 1989-04-26 | ||
JP1107979A JPH02284638A (en) | 1989-04-26 | 1989-04-26 | Feeder of high-performance process gas |
Publications (1)
Publication Number | Publication Date |
---|---|
US5241987A true US5241987A (en) | 1993-09-07 |
Family
ID=14472907
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US07/773,893 Expired - Lifetime US5241987A (en) | 1989-04-26 | 1989-10-04 | Process gas supplying apparatus |
Country Status (3)
Country | Link |
---|---|
US (1) | US5241987A (en) |
JP (1) | JPH02284638A (en) |
WO (1) | WO1990012641A1 (en) |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0698788A4 (en) * | 1991-05-31 | 1995-01-06 | Tadahiro Ohmi | Method and device for measuring variation in decomposition rate of special material gas |
US6220500B1 (en) * | 1997-08-08 | 2001-04-24 | Tadahiro Ohmi | Welding method for fluorine-passivated member for welding, fluorine-passivation method after being weld, and welded parts |
US6418960B1 (en) * | 1999-10-06 | 2002-07-16 | Applied Materials, Inc. | Ultrasonic enhancement for solvent purge of a liquid delivery system |
US6478040B1 (en) * | 1999-07-13 | 2002-11-12 | Nippon Sanso Corporation | Gas supplying apparatus and gas substitution method |
US20030021382A1 (en) * | 2001-07-30 | 2003-01-30 | Iwanczyk Jan S. | Method and apparatus for fabricating mercuric iodide polycrystalline films for digital radiography |
US6615871B2 (en) | 1997-02-14 | 2003-09-09 | Tadahiro Ohmi | Fluid control apparatus |
US6718980B2 (en) * | 1999-04-26 | 2004-04-13 | Veritek Ngv | Treatment of carbon monoxide poisoning |
US20040112289A1 (en) * | 2002-08-30 | 2004-06-17 | Tokyo Electron Limited | Thin-film deposition apparatus and method for rapidly switching supply of source gases |
EP1550738A1 (en) * | 2003-12-31 | 2005-07-06 | The Boc Group, Inc. | Method and apparatus for atomic layer deposition |
US7013916B1 (en) * | 1997-11-14 | 2006-03-21 | Air Products And Chemicals, Inc. | Sub-atmospheric gas delivery method and apparatus |
US20110290371A1 (en) * | 2008-09-16 | 2011-12-01 | L'air Liquide Societe Anonyme Pour L'etude Et L'ex | Miniaturized Plant for Producing Gas Mixtures |
US20120152364A1 (en) * | 2010-12-17 | 2012-06-21 | Horiba Stec, Co., Ltd. | Gas concentration controller system |
CN101653704B (en) * | 2008-08-20 | 2013-01-09 | 株式会社村田制作所 | Preparation method of inorganic powder cataplasm |
US11131605B2 (en) * | 2018-06-22 | 2021-09-28 | Avl Test Systems, Inc. | System and method for collecting exhaust samples for an emissions test system |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6436353B1 (en) | 1997-06-13 | 2002-08-20 | Tadahiro Ohmi | Gas recovering apparatus |
JP4356943B2 (en) * | 2003-09-05 | 2009-11-04 | 株式会社日立国際電気 | Substrate processing apparatus and semiconductor device manufacturing method |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3417779A (en) * | 1967-01-09 | 1968-12-24 | Perkin Elmer Corp | Selectable concentration gas mixing apparatus |
US4062373A (en) * | 1975-02-07 | 1977-12-13 | Clark Justin S | Method and apparatus for mixing gases |
US4257439A (en) * | 1976-06-23 | 1981-03-24 | Bi-M Instrument Company | Apparatus for producing calibration gases suitable for analytical instrumentation |
JPS5850530A (en) * | 1981-09-21 | 1983-03-25 | Olympus Optical Co Ltd | Film cassette for endoscope |
US4392514A (en) * | 1981-01-26 | 1983-07-12 | Queue Systems, Inc. | Apparatus and method for precision gas mixing |
US4546794A (en) * | 1982-12-01 | 1985-10-15 | The Boc Group Plc | Gas mixing apparatus |
US4605034A (en) * | 1983-10-25 | 1986-08-12 | Citizen Watch Co., Ltd. | Gas flow control system for an anesthesia apparatus |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5850530B2 (en) * | 1980-03-18 | 1983-11-11 | 温泉工業株式会社 | Hot water/water mixing method and equipment |
-
1989
- 1989-04-26 JP JP1107979A patent/JPH02284638A/en active Pending
- 1989-10-04 US US07/773,893 patent/US5241987A/en not_active Expired - Lifetime
- 1989-10-04 WO PCT/JP1989/001014 patent/WO1990012641A1/en unknown
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3417779A (en) * | 1967-01-09 | 1968-12-24 | Perkin Elmer Corp | Selectable concentration gas mixing apparatus |
US4062373A (en) * | 1975-02-07 | 1977-12-13 | Clark Justin S | Method and apparatus for mixing gases |
US4257439A (en) * | 1976-06-23 | 1981-03-24 | Bi-M Instrument Company | Apparatus for producing calibration gases suitable for analytical instrumentation |
US4392514A (en) * | 1981-01-26 | 1983-07-12 | Queue Systems, Inc. | Apparatus and method for precision gas mixing |
JPS5850530A (en) * | 1981-09-21 | 1983-03-25 | Olympus Optical Co Ltd | Film cassette for endoscope |
US4546794A (en) * | 1982-12-01 | 1985-10-15 | The Boc Group Plc | Gas mixing apparatus |
US4605034A (en) * | 1983-10-25 | 1986-08-12 | Citizen Watch Co., Ltd. | Gas flow control system for an anesthesia apparatus |
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0698788A4 (en) * | 1991-05-31 | 1995-01-06 | Tadahiro Ohmi | Method and device for measuring variation in decomposition rate of special material gas |
KR100517424B1 (en) * | 1997-02-14 | 2005-12-12 | 다다히로 오미 | Fluid control device |
US6615871B2 (en) | 1997-02-14 | 2003-09-09 | Tadahiro Ohmi | Fluid control apparatus |
US6818320B2 (en) | 1997-08-08 | 2004-11-16 | Tadahiro Ohmi | Welding method for welded members subjected to fluoride passivation treatment, fluoride passivation retreatment method, and welded parts |
US6220500B1 (en) * | 1997-08-08 | 2001-04-24 | Tadahiro Ohmi | Welding method for fluorine-passivated member for welding, fluorine-passivation method after being weld, and welded parts |
US6962283B2 (en) | 1997-08-08 | 2005-11-08 | Tadahiro Ohmi | Welding method for fluorine-passivated member for welding, fluorine-passivated method after being weld, and welded parts priority data |
US20050011935A1 (en) * | 1997-08-08 | 2005-01-20 | Tadahiro Ohmi | Welding method for fluorine-passivated memberfor welding, fluorine-passivated method after being weld, and welded parts priority data |
US7013916B1 (en) * | 1997-11-14 | 2006-03-21 | Air Products And Chemicals, Inc. | Sub-atmospheric gas delivery method and apparatus |
US6718980B2 (en) * | 1999-04-26 | 2004-04-13 | Veritek Ngv | Treatment of carbon monoxide poisoning |
US6478040B1 (en) * | 1999-07-13 | 2002-11-12 | Nippon Sanso Corporation | Gas supplying apparatus and gas substitution method |
US6418960B1 (en) * | 1999-10-06 | 2002-07-16 | Applied Materials, Inc. | Ultrasonic enhancement for solvent purge of a liquid delivery system |
US7186985B2 (en) | 2001-07-30 | 2007-03-06 | Dxray, Inc. | Method and apparatus for fabricating mercuric iodide polycrystalline films for digital radiography |
US20030021382A1 (en) * | 2001-07-30 | 2003-01-30 | Iwanczyk Jan S. | Method and apparatus for fabricating mercuric iodide polycrystalline films for digital radiography |
US20040112289A1 (en) * | 2002-08-30 | 2004-06-17 | Tokyo Electron Limited | Thin-film deposition apparatus and method for rapidly switching supply of source gases |
EP1550738A1 (en) * | 2003-12-31 | 2005-07-06 | The Boc Group, Inc. | Method and apparatus for atomic layer deposition |
CN101653704B (en) * | 2008-08-20 | 2013-01-09 | 株式会社村田制作所 | Preparation method of inorganic powder cataplasm |
US20110290371A1 (en) * | 2008-09-16 | 2011-12-01 | L'air Liquide Societe Anonyme Pour L'etude Et L'ex | Miniaturized Plant for Producing Gas Mixtures |
US20120152364A1 (en) * | 2010-12-17 | 2012-06-21 | Horiba Stec, Co., Ltd. | Gas concentration controller system |
US9116526B2 (en) * | 2010-12-17 | 2015-08-25 | Horiba Stec, Co., Ltd. | Gas concentration controller system |
US11131605B2 (en) * | 2018-06-22 | 2021-09-28 | Avl Test Systems, Inc. | System and method for collecting exhaust samples for an emissions test system |
Also Published As
Publication number | Publication date |
---|---|
JPH02284638A (en) | 1990-11-22 |
WO1990012641A1 (en) | 1990-11-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: OHMI, TADAHIRO, JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNORS:SUGIYAMA, KAZUHIKO;NAKAHARA, FUMIO;REEL/FRAME:005984/0106 Effective date: 19911105 |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
FEPP | Fee payment procedure |
Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
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FPAY | Fee payment |
Year of fee payment: 4 |
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FPAY | Fee payment |
Year of fee payment: 8 |
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REFU | Refund |
Free format text: REFUND - PAYMENT OF MAINTENANCE FEE, 12TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: R1553); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY Free format text: REFUND - 11.5 YR SURCHARGE - LATE PMT W/IN 6 MO, LARGE ENTITY (ORIGINAL EVENT CODE: R1556); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
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REMI | Maintenance fee reminder mailed | ||
FPAY | Fee payment |
Year of fee payment: 12 |
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SULP | Surcharge for late payment |
Year of fee payment: 11 |
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AS | Assignment |
Owner name: TOKYO ELECTRON LIMITED, JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:OHMI, TADAHIRO;REEL/FRAME:016851/0959 Effective date: 20050623 |
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AS | Assignment |
Owner name: FOUNDATION FOR ADVANCEMENT OF INTERNATIONAL SCIENC Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:OHMI, TADAHIRO;REEL/FRAME:017215/0184 Effective date: 20050827 |
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AS | Assignment |
Owner name: FOUNDATION FOR ADVANCEMENT OF INTERNATIONAL SCIENC Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:TOKYO ELECTRON LIMITED;REEL/FRAME:019287/0532 Effective date: 20070329 |