US4521727A - Hall effect circuit with temperature compensation - Google Patents

Hall effect circuit with temperature compensation Download PDF

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Publication number
US4521727A
US4521727A US06/497,311 US49731183A US4521727A US 4521727 A US4521727 A US 4521727A US 49731183 A US49731183 A US 49731183A US 4521727 A US4521727 A US 4521727A
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current
voltage
terminal
terminals
branches
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US06/497,311
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English (en)
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James H. Atherton
Silvo Stanojevic
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Honeywell Inc
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Honeywell Inc
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Assigned to HONEYWELL INC., A CORP OF MN. reassignment HONEYWELL INC., A CORP OF MN. ASSIGNMENT OF ASSIGNORS INTEREST. Assignors: ATHERTON, JAMES H., STANOJEVIC, SILVO
Priority to DE19843418906 priority patent/DE3418906A1/de
Priority to JP59103542A priority patent/JPS59232472A/ja
Priority to NLAANVRAGE8401647,A priority patent/NL189639C/xx
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Publication of US4521727A publication Critical patent/US4521727A/en
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/32—Compensating for temperature change
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D3/00—Indicating or recording apparatus with provision for the special purposes referred to in the subgroups
    • G01D3/028—Indicating or recording apparatus with provision for the special purposes referred to in the subgroups mitigating undesired influences, e.g. temperature, pressure
    • G01D3/036—Indicating or recording apparatus with provision for the special purposes referred to in the subgroups mitigating undesired influences, e.g. temperature, pressure on measuring arrangements themselves
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S323/00—Electricity: power supply or regulation systems
    • Y10S323/907—Temperature compensation of semiconductor

Definitions

  • the invention disclosed herein relates generally to a method and means for providing temperature compensation for elements whose sensitivity is a function of electric current therethrough, and more particularly to a method and circuitry for compensating for the temperature dependence of the sensitivity of Hall effect elements and other elements with similar characteristics.
  • a Hall effect element may be used as a stable signal generator or as a switch or boundary value indicator which functions without physical contact.
  • the theory of operation of a Hall effect generator is well-known. The effect may be generally described as follows. If a block or sheet of suitable material having orthogonal axes x,y and z is fitted with a pair of input electrodes such that a current flows along the x axis, and if a magnetic field is passed through the material generally parallel to the y axis, then a Hall voltage will be produced across the material in the direction of the z axis. A pair of output electrodes may be connected to the material such that the Hall voltage can be applied to an output circuit.
  • Hall element maintaining a constant current through a Hall element may not be feasible in some situations.
  • the Hall element in British Pat. No. 1,247,955 is described as having decreasing resistance with increasing temperature which is generally opposite to the temperature response of known Hall effect materials. Operation of the output circuit appears to depend on this unconventional temperature dependence.
  • the Hall element and compensation circuit disclosed in the patent are not well adapted to manufacture by the most common present monolithic integrated circuit fabrication processes.
  • the applicants have provided a unique temperature compensation method and circuit which is simple and applicable to various elements of the type whose sensitivity is a function of electric current therethrough. It is also readily manufactured with elements, such as Hall elements, in monolithic integrated circuit form by common integrated circuit fabrication processes.
  • the present invention is a method and circuit which compensates for the variable sensitivity of a Hall element (or other element with similar characteristics) by means of a voltage reference that tracks the Hall voltage over temperature.
  • the Hall voltage is then compared with the reference voltage and an output signal is produced based on the relative magnitudes of the voltages.
  • the reference voltage may be generated by producing a current proportional to the current through the Hall element and passing this current through an impedance device.
  • the circuit for generating the reference voltage may include first and second current conducting branches, one of which contains the impedance device, means for controlling the sum of the currents through the branches in accordance with the current through the Hall element, and means for differentially controlling the currents in the branches in accordance with the Hall voltage.
  • FIG. 1 is a partially block and partially schematic drawing of a Hall element and associated temperature compensation circuit in accordance with the applicants' invention.
  • FIG. 2 is a schematic circuit diagram of a preferred embodiment of a Hall element and associated temperature compensation circuit in accordance with the applicants' invention.
  • reference numeral identifies a Hall effect element or other element exhibiting similar characteristics.
  • the element will be referred to as a Hall element.
  • the Hall element produces an output voltage given by the equation
  • V HO is the Hall offset voltage
  • K 1 is a temperature independent constant
  • B is magnetic flux density.
  • This voltage has a large negative temperature coefficient since I H decreases rapidly with increasing temperature. Accordingly, the Hall element sensitivity (K 1 I H ) also decreases rapidly with increasing temperature. Compensation for decreasing sensitivity can be provided by constructing a voltage reference that tracks the Hall output voltage over temperature.
  • FIG. 1 illustrates a concept for incorporating such a reference into a comparator.
  • a fixed voltage is supplied to Hall element 10 and the remainder of the circuit through a supply terminal 11.
  • Element 10 is connected between terminal 11 and the collector of an NPN transistor 12 whose emitter is connected to a source of reference potential or ground 13.
  • Transistor 12 is part of a current mirror which also includes an NPN transistor 14 whose emitter is connected to ground 13.
  • the bases of the transistors are connected together and to the collector of transistor 12. Accordingly, a current through transistor 12 results in a proportional current through transistor 14.
  • the constant of proportionality K 2 depends on design parameters of the transistors.
  • the Hall output voltage of element 10 is applied between the bases of a pair of NPN transistors 15 and 16.
  • the emitter of transistor 15 is connected directly to the collector of transistor 14, and the emitter of transistor 16 is connected to the collector of transistor 14 through a variable resistor 17.
  • the current through transistor 14 is the sum of currents I C1 and I C2 through transistors 15 and 16 respectively.
  • the magnitude of current I C2 relative to I C1 depends on the resistance of resistor 17 and the differential base drive voltage provided to transistors 15 and 16 by Hall element 10. As shown in FIG. 1, currents I C1 and I C2 are supplied through supply terminal 11 and are detected by current detectors 18 and 19 respectively.
  • the comparator input voltage required to cause current I C1 to equal current I C2 is given by the equation ##EQU1## where ⁇ V BE is the difference in the base to emitter voltages of transistors 15 and 16, K 2 is a temperature independent constant and R 1 is the resistance of resistor 17. Voltage V C is in essence a reference voltage against which the Hall output voltage can be compared. The temperature coefficient of the reference voltage is determined by current I H . Thus, temperature tracking between the Hall output voltage and the reference voltage is assured.
  • the circuit of FIG. 2 further includes an active load device comprising PNP transistors 20 and 21 having their bases connected together, their emitters connected to supply terminal 11 and their collectors respectively connected to the collectors of transistors 15 and 16.
  • the collector of transistor 20 is also connected to the bases of transistors 20 and 21 through the base-emitter electrodes of a PNP transistor 22.
  • Transistors 20 and 21 are designed so that the collector current of transistor 21 is equal to the collector current of transistor 20.
  • the junction of the collectors of transistors 16 and 21 is connected to the base of a PNP transistor 23 in an arrangement symmetrical to that of transistor 22.
  • the emitter of transistor 22 is connected to supply terminal 11 through a resistor 24.
  • the emitter of transistor 23 is connected to supply terminal 11 through a PNP transistor 25 whose collector is shorted to its base.
  • the collectors of transistors 22 and 23 are connected to terminals of a current mirror comprising NPN transistors 26 and 27 whose bases are connected to the collector of transistor 26 and whose emitters are connected to ground 13. More specifically, the collector of transistor 22 is connected directly to the collector of transistor 26 and the collector of transistor 23 is connected to the collector of transistor 27 through a resistor 28.
  • the current mirror comprising transistors 26 and 27 is designed such that the collector current of transistor 27 is equal to the collector current of transistor 26.
  • the collector of transistor 27 is also connected to the base of an NPN transistor 30 whose emitter is connected to ground 13 and whose collector is connected to supply terminal 11 through a resistor 31.
  • the collector of transistor 30 is connected to the base of an NPN transistor 32 whose emitter is connected to ground 13 and whose collector is connected to supply terminal 11 through a resistor 33.
  • the collector of transistor 32 is connected to the base of an NPN transistor 34 whose emitter is connected to ground 13 through a resistor 35 and whose collector is connected to supply terminal 11 through a resistor 36.
  • the emitter of transistor 34 is connected to the base of an NPN transistor 37 whose emitter is connected to ground 13 and whose collector is connected to an output terminal 38.
  • the collector of transistor 34 is connected to the junction between Hall element 10 and the current mirror comprising transistors 12 and 14 through a resistor 40.
  • collector currents of transistors 23 and 27 are equal. That condition results in an indeterminate base drive for transistor 30, which is the nominal switching point for the following circuitry.
  • the collector current of transistor 27 is equal to the collector current of transistor 26 by virtue of the current mirror connection, which in turn is equal to the collector current of transistor 22.
  • Equal collector currents for transistors 22 and 23 imply equal base voltages for the transistors, assuming that the transistors are identical. This implies that the collector currents of transistors 15 and 20 and 16 and 21 are equal. The circuit is thus in a balanced condition.
  • the magnetic field applied to Hall element 10 is slightly vaired so as to increase the voltage on the base of transistor 15 and decrease the voltage on the base of transistor 16. This will increase the collector current of transistors 15 and 20.
  • the collector current of transistor 20 is mirrored to the collector of transistor 21.
  • the increased collector current is reflected as an increased voltage at the base of transistor 23, thus decreasing conduction through the transistor and decreasing the voltage at the base of transistor 30 so as to decrease conduction therethrough.
  • Turning transistor 30 OFF tends to turn transistor 32 ON which tends to turn transistor 34 OFF which turns transistor 37 OFF so as to provide a high voltage state at output terminal 38.
  • Converse operation of the circuit occurs when the magnetic field applied to element 10 is varied so as to increase the voltage at the base of transistor 16 and decrease the voltage at the base of transistor 15.
  • the circuit provides for temperature independent switching of output signal state based only on the magnetic flux applied to element 10.
  • Resistor 24 functions to guarantee sufficient emitter current for transistor 22 so that the circuit will operate even through the betas of transistors 20 and 21 are sufficiently high that the base currents of the transistors are not adequate to supply the required emitter current.
  • Transistor 25 insures that the bases of transistors 22 and 23 are at the same voltage, i.e., two base-emitter voltage drops below the supply voltage, to provide complete comparator circuit balance.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
  • Amplifiers (AREA)
US06/497,311 1983-05-23 1983-05-23 Hall effect circuit with temperature compensation Expired - Lifetime US4521727A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US06/497,311 US4521727A (en) 1983-05-23 1983-05-23 Hall effect circuit with temperature compensation
DE19843418906 DE3418906A1 (de) 1983-05-23 1984-05-21 Temperatur-kompensationsschaltkreis
JP59103542A JPS59232472A (ja) 1983-05-23 1984-05-22 感度が流れる電流の関数である素子の温度補償方法ならびに回路
NLAANVRAGE8401647,A NL189639C (nl) 1983-05-23 1984-05-23 Temperatuur-compensatieschakelkring voor een hall-element.

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Application Number Priority Date Filing Date Title
US06/497,311 US4521727A (en) 1983-05-23 1983-05-23 Hall effect circuit with temperature compensation

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US4521727A true US4521727A (en) 1985-06-04

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JP (1) JPS59232472A (enrdf_load_html_response)
DE (1) DE3418906A1 (enrdf_load_html_response)
NL (1) NL189639C (enrdf_load_html_response)

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4593241A (en) * 1983-06-25 1986-06-03 Kernforschungsanlage Julich Gmbh Hall generator circuit with temperature compensation
US4634961A (en) * 1984-04-18 1987-01-06 Lgz Landis & Gyr Zug Ag Method and circuit for the temperature compensation of a hall element
US4645950A (en) * 1985-05-13 1987-02-24 Texas Instruments Incorporated Two-lead Hall effect sensor
US4734594A (en) * 1986-12-31 1988-03-29 Honeywell Inc. Offset correction for sensor with temperature dependent sensitivity
US4994731A (en) * 1989-11-27 1991-02-19 Navistar International Transportation Corp. Two wire and multiple output Hall-effect sensor
US5055768A (en) * 1990-04-05 1991-10-08 Honeywell Inc. Temperature compensator for hall effect circuit
US5068606A (en) * 1989-09-19 1991-11-26 Kawate Keith W Two wire modulated output current circuit for use with a magnetoresistive bridge speed/position sensor
US5113124A (en) * 1990-09-04 1992-05-12 Eaton Corporation Programmable appliance controller
WO1994006030A1 (en) * 1992-09-02 1994-03-17 Santa Barbara Research Center Magnetoresistive integrated circuit sensor with high output voltage swing and temperature compensation
US5444369A (en) * 1993-02-18 1995-08-22 Kearney-National, Inc. Magnetic rotational position sensor with improved output linearity
US5455510A (en) * 1994-03-11 1995-10-03 Honeywell Inc. Signal comparison circuit with temperature compensation
US5488296A (en) * 1995-01-25 1996-01-30 Honeywell Inc. Temperature compensated magnetically sensitive circuit
US6104231A (en) * 1994-07-19 2000-08-15 Honeywell International Inc. Temperature compensation circuit for a hall effect element
EP0974810A3 (en) * 1998-07-21 2000-12-13 Ade Corporation Nonlinear current mirror for loop-gain control
US6279375B1 (en) 1997-02-24 2001-08-28 Siemens Aktiengesellschaft Method of setting switching points for a sensor output signal
US20060279276A1 (en) * 2005-06-09 2006-12-14 Visteon Global Technologies, Inc. Calibration of a hall effect sensor
US20100019331A1 (en) * 2008-07-23 2010-01-28 Honeywell International Inc. Hall-effect magnetic sensors with improved magnetic responsivity and methods for manufacturing the same
CN103248345A (zh) * 2013-05-23 2013-08-14 成都芯进电子有限公司 一种开关型霍尔传感器的温度补偿电路和温度补偿方法
EP2722682A1 (en) * 2012-10-16 2014-04-23 Melexis Technologies NV Circuit and method for biasing a plate-shaped sensor element of semiconductor material
CN104236009A (zh) * 2013-06-20 2014-12-24 广东美的制冷设备有限公司 空调信号采集补偿装置和方法
CN103825591B (zh) * 2014-03-13 2016-08-17 北京经纬恒润科技有限公司 一种开关型霍尔芯片
US20190049528A1 (en) * 2016-07-12 2019-02-14 Allegro Microsystems, Llc Systems and methods for reducing high order hall plate sensitivity temperature coefficients
US11125785B2 (en) * 2018-03-01 2021-09-21 Tdk Corporation Sensor for detecting temperatures

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3640242A1 (de) * 1986-11-25 1988-05-26 Vdo Schindling Schaltungsanordnung fuer einen sensor
DE102008044464B4 (de) * 2008-08-26 2011-10-13 Lear Corporation Gmbh Vorrichtung zur Auswertung eines Strommesssignals

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US3250995A (en) * 1961-06-30 1966-05-10 Philips Corp Hall plate wattmeter circuit including compensation for the hall plate thermo-voltage
US3435332A (en) * 1966-04-27 1969-03-25 Canadair Ltd Temperature compensating mechanism for hall effect device
GB1247955A (en) * 1968-02-20 1971-09-29 Siemens Ag Improvements relating to hall-effect elements
US3994010A (en) * 1975-03-27 1976-11-23 Honeywell Inc. Hall effect elements
US4134030A (en) * 1977-01-03 1979-01-09 Motorola, Inc. Hall-effect integrated circuit switch
US4393317A (en) * 1979-10-02 1983-07-12 U.S. Philips Corporation Magnetically controllable electronic switch
US4443716A (en) * 1982-01-26 1984-04-17 Sprague Electric Company Symmetrical-hysteresis Hall switch

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US3816766A (en) * 1973-01-29 1974-06-11 Sprague Electric Co Integrated circuit with hall cell
JPS529992B2 (enrdf_load_html_response) * 1973-05-11 1977-03-19
US4198581A (en) * 1977-10-13 1980-04-15 Rca Corporation Temperature compensating comparator
DE3217441A1 (de) * 1981-05-08 1982-11-25 The General Electric Co. Ltd., London Anordnung mit einer halleffektvorrichtung

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Publication number Priority date Publication date Assignee Title
US3250995A (en) * 1961-06-30 1966-05-10 Philips Corp Hall plate wattmeter circuit including compensation for the hall plate thermo-voltage
US3435332A (en) * 1966-04-27 1969-03-25 Canadair Ltd Temperature compensating mechanism for hall effect device
GB1247955A (en) * 1968-02-20 1971-09-29 Siemens Ag Improvements relating to hall-effect elements
US3994010A (en) * 1975-03-27 1976-11-23 Honeywell Inc. Hall effect elements
US4134030A (en) * 1977-01-03 1979-01-09 Motorola, Inc. Hall-effect integrated circuit switch
US4393317A (en) * 1979-10-02 1983-07-12 U.S. Philips Corporation Magnetically controllable electronic switch
US4443716A (en) * 1982-01-26 1984-04-17 Sprague Electric Company Symmetrical-hysteresis Hall switch

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
Bolash et al., "Monolithic Hall Cell System, " IBM Tech. Discl. Syst., vol. 21, No. 7, pp. 2717, 2718, Dec. 1978.
Bolash et al., Monolithic Hall Cell System, IBM Tech. Discl. Syst., vol. 21, No. 7, pp. 2717, 2718, Dec. 1978. *
Maupin et al., "The Hall Effect in Silicon Circuits", paper presented at The Hall Effect; A Commemorative Symposium, John Hopkins University, (Nov. 13, 1979).
Maupin et al., The Hall Effect in Silicon Circuits , paper presented at The Hall Effect; A Commemorative Symposium, John Hopkins University, (Nov. 13, 1979). *

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4593241A (en) * 1983-06-25 1986-06-03 Kernforschungsanlage Julich Gmbh Hall generator circuit with temperature compensation
US4634961A (en) * 1984-04-18 1987-01-06 Lgz Landis & Gyr Zug Ag Method and circuit for the temperature compensation of a hall element
US4645950A (en) * 1985-05-13 1987-02-24 Texas Instruments Incorporated Two-lead Hall effect sensor
US4734594A (en) * 1986-12-31 1988-03-29 Honeywell Inc. Offset correction for sensor with temperature dependent sensitivity
US5068606A (en) * 1989-09-19 1991-11-26 Kawate Keith W Two wire modulated output current circuit for use with a magnetoresistive bridge speed/position sensor
US4994731A (en) * 1989-11-27 1991-02-19 Navistar International Transportation Corp. Two wire and multiple output Hall-effect sensor
US5055768A (en) * 1990-04-05 1991-10-08 Honeywell Inc. Temperature compensator for hall effect circuit
US5113124A (en) * 1990-09-04 1992-05-12 Eaton Corporation Programmable appliance controller
WO1994006030A1 (en) * 1992-09-02 1994-03-17 Santa Barbara Research Center Magnetoresistive integrated circuit sensor with high output voltage swing and temperature compensation
US5402064A (en) * 1992-09-02 1995-03-28 Santa Barbara Research Center Magnetoresistive sensor circuit with high output voltage swing and temperature compensation
US5444369A (en) * 1993-02-18 1995-08-22 Kearney-National, Inc. Magnetic rotational position sensor with improved output linearity
US5455510A (en) * 1994-03-11 1995-10-03 Honeywell Inc. Signal comparison circuit with temperature compensation
US6104231A (en) * 1994-07-19 2000-08-15 Honeywell International Inc. Temperature compensation circuit for a hall effect element
US5488296A (en) * 1995-01-25 1996-01-30 Honeywell Inc. Temperature compensated magnetically sensitive circuit
US6279375B1 (en) 1997-02-24 2001-08-28 Siemens Aktiengesellschaft Method of setting switching points for a sensor output signal
EP0974810A3 (en) * 1998-07-21 2000-12-13 Ade Corporation Nonlinear current mirror for loop-gain control
US7265539B2 (en) 2005-06-09 2007-09-04 Ford Motor Company Calibration of a hall effect sensor
US20060279276A1 (en) * 2005-06-09 2006-12-14 Visteon Global Technologies, Inc. Calibration of a hall effect sensor
US20100019331A1 (en) * 2008-07-23 2010-01-28 Honeywell International Inc. Hall-effect magnetic sensors with improved magnetic responsivity and methods for manufacturing the same
US7772661B2 (en) 2008-07-23 2010-08-10 Honeywell International Inc. Hall-effect magnetic sensors with improved magnetic responsivity and methods for manufacturing the same
EP2722682A1 (en) * 2012-10-16 2014-04-23 Melexis Technologies NV Circuit and method for biasing a plate-shaped sensor element of semiconductor material
US9170308B2 (en) 2012-10-16 2015-10-27 Melexis Technologies N.V. Circuit and method for biasing a plate-shaped sensor element of semiconductor material
CN103248345B (zh) * 2013-05-23 2018-03-27 成都芯进电子有限公司 一种开关型霍尔传感器的温度补偿电路和温度补偿方法
CN103248345A (zh) * 2013-05-23 2013-08-14 成都芯进电子有限公司 一种开关型霍尔传感器的温度补偿电路和温度补偿方法
CN104236009A (zh) * 2013-06-20 2014-12-24 广东美的制冷设备有限公司 空调信号采集补偿装置和方法
CN104236009B (zh) * 2013-06-20 2017-03-15 广东美的制冷设备有限公司 空调信号采集补偿装置和方法
CN103825591B (zh) * 2014-03-13 2016-08-17 北京经纬恒润科技有限公司 一种开关型霍尔芯片
US20190049528A1 (en) * 2016-07-12 2019-02-14 Allegro Microsystems, Llc Systems and methods for reducing high order hall plate sensitivity temperature coefficients
US10746818B2 (en) * 2016-07-12 2020-08-18 Allegro Microsystems, Llc Systems and methods for reducing high order hall plate sensitivity temperature coefficients
US11125785B2 (en) * 2018-03-01 2021-09-21 Tdk Corporation Sensor for detecting temperatures

Also Published As

Publication number Publication date
DE3418906A1 (de) 1984-11-29
DE3418906C2 (enrdf_load_html_response) 1990-10-04
NL189639C (nl) 1993-06-01
NL189639B (nl) 1993-01-04
JPH0351118B2 (enrdf_load_html_response) 1991-08-05
JPS59232472A (ja) 1984-12-27
NL8401647A (nl) 1984-12-17

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