US4458260A - Avalanche photodiode array - Google Patents
Avalanche photodiode array Download PDFInfo
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- US4458260A US4458260A US06/323,200 US32320081A US4458260A US 4458260 A US4458260 A US 4458260A US 32320081 A US32320081 A US 32320081A US 4458260 A US4458260 A US 4458260A
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA387431 | 1981-10-06 | ||
CA000387431A CA1177148A (en) | 1981-10-06 | 1981-10-06 | Avalanche photodiode array |
Publications (1)
Publication Number | Publication Date |
---|---|
US4458260A true US4458260A (en) | 1984-07-03 |
Family
ID=4121108
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US06/323,200 Expired - Fee Related US4458260A (en) | 1981-10-06 | 1981-11-20 | Avalanche photodiode array |
Country Status (2)
Country | Link |
---|---|
US (1) | US4458260A (en) |
CA (1) | CA1177148A (en) |
Cited By (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3640713A1 (en) * | 1986-03-24 | 1987-10-08 | Westinghouse Electric Corp | METHOD FOR FORMING SEMICONDUCTOR TRANSITIONS |
US4740710A (en) * | 1984-06-21 | 1988-04-26 | Kyocera Corporation | Photo-detector apparatus for a reading apparatus and producing method therefor |
US4807027A (en) * | 1985-02-27 | 1989-02-21 | Mitsubishi Denki Kabushiki Kaisha | Station platform observation method |
US5021854A (en) * | 1987-12-03 | 1991-06-04 | Xsirius Photonics, Inc. | Silicon avalanche photodiode array |
US5229636A (en) * | 1987-09-01 | 1993-07-20 | Tatsuji Masuda | Negative effective mass semiconductor device and circuit |
US5438217A (en) * | 1994-04-29 | 1995-08-01 | General Electric Company | Planar avalanche photodiode array with sidewall segment |
US5446308A (en) * | 1994-04-04 | 1995-08-29 | General Electric Company | Deep-diffused planar avalanche photodiode |
US5583352A (en) * | 1994-04-29 | 1996-12-10 | Eg&G Limited | Low-noise, reach-through, avalanche photodiodes |
US5751012A (en) * | 1995-06-07 | 1998-05-12 | Micron Technology, Inc. | Polysilicon pillar diode for use in a non-volatile memory cell |
US5753947A (en) * | 1995-01-20 | 1998-05-19 | Micron Technology, Inc. | Very high-density DRAM cell structure and method for fabricating it |
US5757057A (en) * | 1997-06-25 | 1998-05-26 | Advanced Photonix, Inc. | Large area avalanche photodiode array |
US5789277A (en) * | 1996-07-22 | 1998-08-04 | Micron Technology, Inc. | Method of making chalogenide memory device |
US5812441A (en) * | 1996-10-21 | 1998-09-22 | Micron Technology, Inc. | MOS diode for use in a non-volatile memory cell |
US5814527A (en) * | 1996-07-22 | 1998-09-29 | Micron Technology, Inc. | Method of making small pores defined by a disposable internal spacer for use in chalcogenide memories |
US5831276A (en) * | 1995-06-07 | 1998-11-03 | Micron Technology, Inc. | Three-dimensional container diode for use with multi-state material in a non-volatile memory cell |
GB2325081A (en) * | 1997-05-06 | 1998-11-11 | Simage Oy | Semiconductot x-ray imaging device |
US5837564A (en) * | 1995-11-01 | 1998-11-17 | Micron Technology, Inc. | Method for optimal crystallization to obtain high electrical performance from chalcogenides |
US5841150A (en) * | 1995-06-07 | 1998-11-24 | Micron Technology, Inc. | Stack/trench diode for use with a muti-state material in a non-volatile memory cell |
US5869843A (en) * | 1995-06-07 | 1999-02-09 | Micron Technology, Inc. | Memory array having a multi-state element and method for forming such array or cells thereof |
US5879955A (en) * | 1995-06-07 | 1999-03-09 | Micron Technology, Inc. | Method for fabricating an array of ultra-small pores for chalcogenide memory cells |
US5920788A (en) * | 1995-06-07 | 1999-07-06 | Micron Technology, Inc. | Chalcogenide memory cell with a plurality of chalcogenide electrodes |
US5952671A (en) * | 1997-05-09 | 1999-09-14 | Micron Technology, Inc. | Small electrode for a chalcogenide switching device and method for fabricating same |
US5970336A (en) * | 1996-08-22 | 1999-10-19 | Micron Technology, Inc. | Method of making memory cell incorporating a chalcogenide element |
US5985698A (en) * | 1996-07-22 | 1999-11-16 | Micron Technology, Inc. | Fabrication of three dimensional container diode for use with multi-state material in a non-volatile memory cell |
USRE36518E (en) * | 1992-06-23 | 2000-01-18 | Micron Technology, Inc. | Method for making electrical contact with an active area through sub-micron contact openings and a semiconductor device |
US6015977A (en) * | 1997-01-28 | 2000-01-18 | Micron Technology, Inc. | Integrated circuit memory cell having a small active area and method of forming same |
US6025220A (en) * | 1996-06-18 | 2000-02-15 | Micron Technology, Inc. | Method of forming a polysilicon diode and devices incorporating such diode |
US6031287A (en) * | 1997-06-18 | 2000-02-29 | Micron Technology, Inc. | Contact structure and memory element incorporating the same |
US6066883A (en) * | 1998-03-16 | 2000-05-23 | Xerox Corporation | Guarding for a CMOS photosensor chip |
US6087689A (en) * | 1997-06-16 | 2000-07-11 | Micron Technology, Inc. | Memory cell having a reduced active area and a memory array incorporating the same |
US6117720A (en) * | 1995-06-07 | 2000-09-12 | Micron Technology, Inc. | Method of making an integrated circuit electrode having a reduced contact area |
US6160306A (en) * | 1998-05-20 | 2000-12-12 | Samsung Electronics Co., Ltd. | Diode of semiconductor device and method for manufacturing the same |
US6337266B1 (en) | 1996-07-22 | 2002-01-08 | Micron Technology, Inc. | Small electrode for chalcogenide memories |
US6440837B1 (en) | 2000-07-14 | 2002-08-27 | Micron Technology, Inc. | Method of forming a contact structure in a semiconductor device |
US6504178B2 (en) * | 1999-07-02 | 2003-01-07 | Digirad Corporation | Indirect back surface contact to semiconductor devices |
US6563156B2 (en) | 2001-03-15 | 2003-05-13 | Micron Technology, Inc. | Memory elements and methods for making same |
US6597025B2 (en) * | 2001-03-15 | 2003-07-22 | Koninklijke Philips Electronics N.V. | Light sensitive semiconductor component |
US6670713B2 (en) | 1996-02-23 | 2003-12-30 | Micron Technology, Inc. | Method for forming conductors in semiconductor devices |
US20080251692A1 (en) * | 2004-05-05 | 2008-10-16 | Max--Planck--Gesellschaft Forderung Der Wissenschaften E.V. Hofgaten Strasse 8 | Silicon Photoelectric Multiplier (Variants) and a Cell for Silicon Photoelectric Multiplier |
DE102007024074A1 (en) | 2007-05-22 | 2008-11-27 | Leica Microsystems Cms Gmbh | Device for light detection in a scanning microscope |
USRE40790E1 (en) * | 1992-06-23 | 2009-06-23 | Micron Technology, Inc. | Method for making electrical contact with an active area through sub-micron contact openings and a semiconductor device |
CN102184929A (en) * | 2011-03-24 | 2011-09-14 | 南京大学 | Ultraviolet avalanche diode imaging array pixel, application method thereof and avalanche transistor imaging array |
GB2485400A (en) * | 2010-11-12 | 2012-05-16 | Toshiba Res Europ Ltd | Avalanche photo-diode single photon detector |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3601668A (en) * | 1969-11-07 | 1971-08-24 | Fairchild Camera Instr Co | Surface depletion layer photodevice |
US3608189A (en) * | 1970-01-07 | 1971-09-28 | Gen Electric | Method of making complementary field-effect transistors by single step diffusion |
US3703669A (en) * | 1971-08-12 | 1972-11-21 | Motorola Inc | Photocurrent cross talk isolation |
US4021844A (en) * | 1972-12-01 | 1977-05-03 | Thomson-Csf | Photosensitive diode array storage target |
US4129878A (en) * | 1977-09-21 | 1978-12-12 | Rca Limited | Multi-element avalanche photodiode having reduced electrical noise |
US4232328A (en) * | 1978-12-20 | 1980-11-04 | Bell Telephone Laboratories, Incorporated | Dielectrically-isolated integrated circuit complementary transistors for high voltage use |
-
1981
- 1981-10-06 CA CA000387431A patent/CA1177148A/en not_active Expired
- 1981-11-20 US US06/323,200 patent/US4458260A/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3601668A (en) * | 1969-11-07 | 1971-08-24 | Fairchild Camera Instr Co | Surface depletion layer photodevice |
US3608189A (en) * | 1970-01-07 | 1971-09-28 | Gen Electric | Method of making complementary field-effect transistors by single step diffusion |
US3703669A (en) * | 1971-08-12 | 1972-11-21 | Motorola Inc | Photocurrent cross talk isolation |
US4021844A (en) * | 1972-12-01 | 1977-05-03 | Thomson-Csf | Photosensitive diode array storage target |
US4129878A (en) * | 1977-09-21 | 1978-12-12 | Rca Limited | Multi-element avalanche photodiode having reduced electrical noise |
US4232328A (en) * | 1978-12-20 | 1980-11-04 | Bell Telephone Laboratories, Incorporated | Dielectrically-isolated integrated circuit complementary transistors for high voltage use |
Cited By (116)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4740710A (en) * | 1984-06-21 | 1988-04-26 | Kyocera Corporation | Photo-detector apparatus for a reading apparatus and producing method therefor |
US4807027A (en) * | 1985-02-27 | 1989-02-21 | Mitsubishi Denki Kabushiki Kaisha | Station platform observation method |
DE3640713A1 (en) * | 1986-03-24 | 1987-10-08 | Westinghouse Electric Corp | METHOD FOR FORMING SEMICONDUCTOR TRANSITIONS |
US5229636A (en) * | 1987-09-01 | 1993-07-20 | Tatsuji Masuda | Negative effective mass semiconductor device and circuit |
US5021854A (en) * | 1987-12-03 | 1991-06-04 | Xsirius Photonics, Inc. | Silicon avalanche photodiode array |
US5146296A (en) * | 1987-12-03 | 1992-09-08 | Xsirius Photonics, Inc. | Devices for detecting and/or imaging single photoelectron |
USRE36518E (en) * | 1992-06-23 | 2000-01-18 | Micron Technology, Inc. | Method for making electrical contact with an active area through sub-micron contact openings and a semiconductor device |
USRE40790E1 (en) * | 1992-06-23 | 2009-06-23 | Micron Technology, Inc. | Method for making electrical contact with an active area through sub-micron contact openings and a semiconductor device |
US5670383A (en) * | 1994-04-04 | 1997-09-23 | General Electric Company | Method for fabrication of deep-diffused avalanche photodiode |
US5446308A (en) * | 1994-04-04 | 1995-08-29 | General Electric Company | Deep-diffused planar avalanche photodiode |
US5438217A (en) * | 1994-04-29 | 1995-08-01 | General Electric Company | Planar avalanche photodiode array with sidewall segment |
US5583352A (en) * | 1994-04-29 | 1996-12-10 | Eg&G Limited | Low-noise, reach-through, avalanche photodiodes |
US5500376A (en) * | 1994-04-29 | 1996-03-19 | General Electric Company | Method for fabricating planar avalanche photodiode array |
US5753947A (en) * | 1995-01-20 | 1998-05-19 | Micron Technology, Inc. | Very high-density DRAM cell structure and method for fabricating it |
US6096596A (en) * | 1995-01-20 | 2000-08-01 | Micron Technology Inc. | Very high-density DRAM cell structure and method for fabricating it |
US6429449B1 (en) | 1995-06-07 | 2002-08-06 | Micron Technology, Inc. | Three-dimensional container diode for use with multi-state material in a non-volatile memory cell |
US20050029587A1 (en) * | 1995-06-07 | 2005-02-10 | Harshfield Steven T. | Method and apparatus for forming an integrated circuit electrode having a reduced contact area |
US5831276A (en) * | 1995-06-07 | 1998-11-03 | Micron Technology, Inc. | Three-dimensional container diode for use with multi-state material in a non-volatile memory cell |
US6653195B1 (en) | 1995-06-07 | 2003-11-25 | Micron Technology, Inc. | Fabrication of three dimensional container diode for use with multi-state material in a non-volatile memory cell |
US20040161895A1 (en) * | 1995-06-07 | 2004-08-19 | Fernando Gonzalez | Method for fabricating an array of ultra-small pores for chalcogenide memory cells |
US5841150A (en) * | 1995-06-07 | 1998-11-24 | Micron Technology, Inc. | Stack/trench diode for use with a muti-state material in a non-volatile memory cell |
US5869843A (en) * | 1995-06-07 | 1999-02-09 | Micron Technology, Inc. | Memory array having a multi-state element and method for forming such array or cells thereof |
US5879955A (en) * | 1995-06-07 | 1999-03-09 | Micron Technology, Inc. | Method for fabricating an array of ultra-small pores for chalcogenide memory cells |
US5920788A (en) * | 1995-06-07 | 1999-07-06 | Micron Technology, Inc. | Chalcogenide memory cell with a plurality of chalcogenide electrodes |
US8017453B2 (en) | 1995-06-07 | 2011-09-13 | Round Rock Research, Llc | Method and apparatus for forming an integrated circuit electrode having a reduced contact area |
US6797978B2 (en) | 1995-06-07 | 2004-09-28 | Micron Technology, Inc. | Method for fabricating an array of ultra-small pores for chalcogenide memory cells |
US6534780B1 (en) | 1995-06-07 | 2003-03-18 | Micron Technology, Inc. | Array of ultra-small pores for memory cells |
US20020179896A1 (en) * | 1995-06-07 | 2002-12-05 | Harshfield Steven T. | Method and apparatus for forming an integrated circuit electrode having a reduced contact area |
US6831330B2 (en) | 1995-06-07 | 2004-12-14 | Micron Technology, Inc. | Method and apparatus for forming an integrated circuit electrode having a reduced contact area |
US6002140A (en) * | 1995-06-07 | 1999-12-14 | Micron Technology, Inc. | Method for fabricating an array of ultra-small pores for chalcogenide memory cells |
US6420725B1 (en) | 1995-06-07 | 2002-07-16 | Micron Technology, Inc. | Method and apparatus for forming an integrated circuit electrode having a reduced contact area |
US6391688B1 (en) | 1995-06-07 | 2002-05-21 | Micron Technology, Inc. | Method for fabricating an array of ultra-small pores for chalcogenide memory cells |
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