US4421677A - Transparent material having electrical conductivity which is dependent on the dose of optical radiation received - Google Patents

Transparent material having electrical conductivity which is dependent on the dose of optical radiation received Download PDF

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Publication number
US4421677A
US4421677A US06/919,976 US91997678A US4421677A US 4421677 A US4421677 A US 4421677A US 91997678 A US91997678 A US 91997678A US 4421677 A US4421677 A US 4421677A
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layer
conductivity
electrical conductivity
dose
dependent
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US06/919,976
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US4736545A (en
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Christian Bianchin
Alain F. Deneuville
Philippe Gerard
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Bpifrance Financement SA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Agence National de Valorisation de la Recherche ANVAR
Commissariat a lEnergie Atomique CEA
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G11C13/047—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using electro-optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312

Definitions

  • This invention relates to a transparent material whose electrical conductivity is dependent on the dose of optical radiation which it has received, to devices for the application of said material and to a method of fabrication of this latter.
  • the invention finds an application in optoelectronics and especially in the construction of memories and image converters.
  • electrochromism and photochromism designate the properties whereby certain substances are capable of assuming a color or changing color when they are subjected either to an electric field or to an electromagnetic radiation. This phenomenon results from the appearance or the displacement of an absorption band in a portion of the optical spectrum, usually in the red region. When the excitation (electrical or optical) disappears, the material remains in its excited state but is capable of recovering its transparency or its initial color after a suitable treatment.
  • photochromic and/or electrochromic materials have an electrical conductivity which depends on the voltage applied thereto or on the degree of illumination which they receive. It is taught especially in the article published in "Applied Optics" that the tungsten oxide WO 3 has a conductivity which increases with the time of exposure to ultraviolet radiation. This variation in electrical conductivity of the oxide, however, is always associated with the variation in color of the material, these two variations being concomitant.
  • the phenomenon therefore involved is one of "pseudophotoconductivity” if it is considered that photoconductivity in the strict sense of the term is a reversible phenomenon which terminates as soon as the excitation disappears. This phenomenon can also be designated as "residual photoconductivity".
  • the material in accordance with the invention is therefore sensitive to the "dose" of radiation received, namely to the quantity of radiation integrated during the period of exposure.
  • the present invention is therefore directed to a transparent material whose electrical conductivity is dependent on the dose of optical radiation which it has received, said material being essentially constituted by a thin layer of substoichiometric amorphous oxide of tungsten or molybdenum.
  • the metal can be chromium molybdenum or tungsten.
  • the thickness of the oxide layer is preferably within the range of 5000 ⁇ and a few microns.
  • the invention is also directed to a memory device and to an image converter device.
  • the memory device essentially comprises:
  • optical writing means for directing a beam of optical radiation onto a zone of said material
  • thermal erasing means constituted by means for raising the temperature of the layer of material above a predetermined value.
  • the image converter device essentially comprises a layer of the material as defined above and inserted in an electric circuit through which a current passes, the intensity of said current being dependent on the dose of light radiation received by the layer.
  • the radiation which serves to illuminate the material is an ultraviolet radiation, the wavelength of which is shorter than 0.3 ⁇ m, for example.
  • FIG. 1 illustrates the time-dependent variation of electrical conductivity of the substoichiometric tungsten oxide WO 2 .4 at the time of pulsed irradiation
  • FIG. 2 gives the curve which is representative of the variations in difference of conductivity induced by ultraviolet radiation as a function of the substoichiometry of tungsten oxide
  • FIG. 3 shows the variations in temperature at which the conductivity passes through a maximum value as a function of the substoichiometry of tungsten oxide
  • FIG. 4 is a diagrammatic illustration of a memory device which makes use of the material in accordance with the invention.
  • FIG. 5 shows diagrammatically a circuit for measuring the electrical conductivity of a storage element which makes use of the material in accordance with the invention
  • FIG. 6 is a diagrammatic view of a crossed-band image converter device or so-called crossbar device
  • FIG. 7 is a diagrammatic sectional view of a system for the conversion of an ultraviolet image to a visible image.
  • FIG. 1 shows the progressive variation in electrical conductivity C of a thin layer of tungsten oxide having a thickness of approximately 1 ⁇ m. Said progressive variation is plotted as ordinates in arbitrary units as a function of time which is plotted as abscissae and expressed in seconds, and takes place when said layer is exposed to a train of ultraviolet light pulses having a wavelength in the vicinity of 0.3 ⁇ m; this pulse train is shown at the bottom of the figure.
  • the stair-step shape of the curve clearly reflects the cumulative character of the action produced by the radiation on the conductivity.
  • the increase in conductivity under the action of irradiation can be suppressed by heating the material to a temperature above a predetermined value which depends on the composition of the oxide.
  • a predetermined value which depends on the composition of the oxide.
  • the value T of the temperature at which the electrical conductivity passes through a maximum depends on the substoichiometry of the oxide layer. This dependence is illustrated in FIG. 3 in the case of the oxide WO x , the temperature T being plotted as ordinates and expressed in degrees C. and the value of x being plotted as abscissae. It is observed in this figure that the maximum values of T are obtained when x is in the vicinity of 2.4, which is precisely the value corresponding to the maximum sensitivity of the layer. A comparison of these two results indicates that the phenomenon of pseudophotoconductivity becomes more stable as a closer relationship to optimum substoichiometry is established.
  • the annealing operation is therefore performed by heating the layer to a temperature above 70° C. It is then necessary to operate in a neutral atmosphere in the presence of an inert gas such as a rare gas, for example.
  • the memory device of FIG. 4 comprises a storage element 10, optical writing means 12, electrical reading means 14 and thermal erasing means 16.
  • the storage element is constituted by a plate 20 of insulating material covered with a thin conductive layer 22 and with a substoichiometric oxide layer 24 of a metal of Group VI which is covered with a thin transparent and conductive layer 26.
  • the support plate 20 or substrate can be constituted by a commercially available glass designated by the trade name "Nesa" which has already been covered with a thin conductive layer.
  • the layer 26 can be a gold film or stannic oxide film.
  • the complete assembly can be placed within a leak-tight enclosure 28 which is filled with inert gas and closed by a transparent plate 29.
  • the writing means 12 comprise a light source 30 (for example a mercury or hydrogen lamp or a laser which emits in the near-ultraviolet region or a laser which emits in the visible region and comprises a frequency doubler) followed by a deflecting system 12 (which can be a prism or an electrooptical system) followed by a shutter 34 controlled by a unit 36; said shutter can be of the Kerr or Pockels cell type or a liquid crystal system.
  • a light source 30 for example a mercury or hydrogen lamp or a laser which emits in the near-ultraviolet region or a laser which emits in the visible region and comprises a frequency doubler
  • a deflecting system 12 which can be a prism or an electrooptical system
  • a shutter 34 controlled by a unit 36 said shutter can be of the Kerr or Pockels cell type or a liquid crystal system.
  • the reading means 14 are constituted by a circuit for measuring the electrical conductivity of the oxide layer 24.
  • the erasing means 16 essentially comprise a heating resistor 40 supplied from a voltage source 42. If necessary, said means can be constituted by a high-intensity light source which is capable of heating the oxide layer 24. An infrared source is suitable for this purpose. In some cases, the source 30 can be employed both for writing and erasing if the power and possibly also the wavelength of said source can be modulated.
  • the source 30 is a laser which emits in the visible region, associated with a retractable frequency doubler; without a doubler, the power of the laser is sufficient to heat-up the oxide layer but the wavelength is too long to give rise to the phenomenon of pseudophotoconductivity; with a doubler, the power falls to a value which is insufficient to produce heating of the layer but the wavelength becomes sufficiently short to ensure that the conductivity of the layer is modified.
  • a memory system of this type follows directly from the explanations given in the foregoing.
  • Storage of a signal in memory is carried out by means of the conductivity of the layer.
  • the signal to be stored is applied for example to the input E of the control unit 36 and initiates opening of the shutter 34 and irradiation of the layer 34 with the light beam which is continuously emitted by the source 30. If reference is made to FIG. 1 described earlier, it will be understood that the conductivity of the layer 24 assumes and retains a value which depends on the total radiation dose which it receives.
  • the oxide layer receives a train of light pulses as in the case of FIG. 1 and the stored information is the sum of the input signals.
  • the memory virtually performs the function of a counter in this case. If the signal E is continuous and possibly variable in some instances, the memory then performs the function of an analog integrator.
  • the circuit 14 delivers at its output S a signal whose amplitude is directly proportional to the conductivity of the oxide layer. It should be noted that this reading operation is nondestructive in regard to the stored information.
  • FIG. 4 represents only one "memory core" and its peripheral elements.
  • said elements would be common to all the cores; writing and reading operations would be performed sequentially from one core to the next, for example, and the erasing operation would be applied to all the cores.
  • FIG. 5 illustrates a particular mode of construction of the reading means.
  • the storage element 44 is inserted in a line comprising a voltage source 46, a transistor 48 of the field-effect MOS type, for example, and a resistor 50.
  • the transistor 48 has a gate g, a source s, and a drain d.
  • the gate g is connected to a voltage generator 52.
  • An amplifier 54 reads the voltage developed at the terminals of the resistor 50.
  • this circuit takes place as follows.
  • the application of a voltage pulse to the gate g of the transistor 48 by means of the circuit 52 triggers said transistor into conduction and a current flows within the arm comprising the channel of said transistor, the element 44 and the resistor 50.
  • the value of this current is dependent on the conductivity of the element 44, with the result that the voltage read by the amplifier 54 is directly a function of said conductivity.
  • the pulse delivered by the generator 52 falls back to zero, the transistor 48 is caused to cut-off and the voltage collected by the amplifier 54 falls to zero.
  • FIG. 6 shows diagrammatically an image converter which makes use of the material in accordance with the invention and serves to convert images to electrical signals.
  • This converter comprises a matrix 56 of conversion elements. Each element corresponds to the overlay of two arrays of semitransparent electrodes, one array being formed by the columns 58 and the other array being formed by the lines 60.
  • the material in accordance with the invention is interposed between these two arrays of electrodes.
  • This device is accordingly made up of crossed bands and constitutes a device of the so-called crossbar type.
  • the columns are connected to a column selector 60 and the lines are connected to a line selector 62. Said column selector is controlled by an addressing device 64 and said line selector is controlled by another addressing device 66.
  • Each selector device comprises a plurality of switches constituted by transistors, for example.
  • the band which is connected to each switch can be connected by this latter to a voltage source 70 in the case of a column and to ground through a resistor 72 in the case of a line.
  • An amplifier 74 reads the voltage at the terminals of the resistor 72 and its output constitutes the output S of the converter.
  • This device is as follows. An image is projected onto the matrix of elements 56. The electrical conductivity of each element accordingly assumes a value which is a direct function of the radiation dose received. If the exposure time is the same in the case of all the cores, the conductivity at each point or core is dependent on the light intensity of the radiation at this point. After this phase of irradiation, a reading phase is initiated and consists in sequential reading of the conductivity of the different elements exposed. To this end, the selecting-circuit switches 60 and 62 are successively closed by the addressing circuits 64 and 66 at the rate of the pulses emanating from the clock pulse generator 68, with the result that the elements of the matrix are connected between the source 70 and the resistor 72 in a sequential manner, for example line by line.
  • This image scan gives rise to a voltage pulse train transmitted through the connection S. The optical image has therefore been converted to an electrical signal. The pulse train obtained can then be transmitted to a receiving device of the television tube type, for example.
  • addressing circuits 64 and 66 as well as the selectors 60 and 62 are not described in detail here since they are well known to anyone versed in the art. They are usually employed in liquid-crystal display devices.
  • FIG. 7 shows diagrammatically the structure of another converter system which comprises a transparent substrate 80 covered with a transparent conductive layer 82 (the complete assembly can be constituted for example by a Nesa glass plate, for example), a layer 84 constituted by the material in accordance with the invention, a second layer 86 of an electrochromic or electroluminescent material, a semitransparent electrode 88 and a voltage source 90 connected to the electrodes 82 and 88.
  • the brightness of the observed image can be adjusted by producing action on the level of electrical excitation applied to the layer 86.
  • the device is therefore also a brightness amplifier.
  • a material which can constitute the layer 86 is the tungsten oxide WO 3 , the electrochromic properties of which are known.
  • the advantage of employing this substance in combination with the substoichiometric oxide WO 2 .4 lies in the fact that the method of fabrication of the assembly then becomes very simple since it is only necessary to deposit successively two oxides having different compositions.
  • a particularly straightforward means of ajusting the composition of an oxide layer accordingly consists in deposition by reactive cathodic sputtering.
  • a target constituted by a metal of Group VI or by its oxide is employed, the substrate is cooled to a temperature below approximately 80° C. and a plasma is formed in an oxygen/rare gas mixture.
  • the composition of the plasma remains constant during the deposition operation.
  • the pressure is of the order of 10 -3 to 10 -2 torr. Deviation from stoichiometry is adjusted by modifying the concentration of oxygen.
  • layers of WO 2 .4 have been deposited on a glass substrate in accordance with this method and under the following conditions:
  • radiation employed energy higher than 3 eV.
  • the amplitudes of the stair-steps of FIG. 1 are divided by a factor of the order of 10 and the same applies to the DC of FIG. 2.
  • layers of Mo O 2 .55 have been deposited on a glass substrate under the following conditions:
  • radiation employed energy higher than 3 eV.

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  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
  • Glass Compositions (AREA)
  • Laminated Bodies (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
  • Light Receiving Elements (AREA)
  • Photoreceptors In Electrophotography (AREA)
US06/919,976 1977-06-29 1978-06-28 Transparent material having electrical conductivity which is dependent on the dose of optical radiation received Expired - Lifetime US4421677A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR7719922 1977-06-29
FR7719922A FR2396420A1 (fr) 1977-06-29 1977-06-29 Materiau transparent photoconducteur, son procede de fabrication et des dispositifs d'application

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US (1) US4421677A (fr)
JP (1) JPS5442991A (fr)
CH (1) CH634690A5 (fr)
DE (1) DE2828390A1 (fr)
FR (1) FR2396420A1 (fr)
GB (1) GB2000641B (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990014630A1 (fr) * 1989-05-16 1990-11-29 Rest Manufacturing, Inc. Systeme electronique d'affichage d'informations a distance
US5169565A (en) * 1990-03-31 1992-12-08 Samsung Electronics Anti-dazzling and electrostatic charge preventive transparent coating material, method thereof and video display coated therewith
US20100184901A1 (en) * 2009-01-20 2010-07-22 Ppg Industries Ohio, Inc. Transparent, colorless infrared radiation absorbing compositions comprising nanoparticles
US20100210450A1 (en) * 2002-12-10 2010-08-19 Ppg Industries Ohio, Inc. Tungsten comprising nanomaterials and related nanotechnology
US9870842B2 (en) 2013-06-12 2018-01-16 Ppg Industries Ohio, Inc. Rapidly curable electrically conductive clear coatings

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8333033D0 (en) * 1983-12-10 1984-01-18 British Petroleum Co Plc Memory device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4203769A (en) * 1975-07-15 1980-05-20 Eastman Kodak Company Radiation-sensitive elements having an antistatic layer containing amorphous vanadium pentoxide
US4211475A (en) * 1977-06-29 1980-07-08 Centre Technique de l'Industrie Horiogere "Ceterhor" Laboratoire d'Electrochimie-Faculte des Sciences et des Techniques Electro-optic display device using a vitreous solid ion-conductive material
US4225216A (en) * 1979-02-21 1980-09-30 Bell Telephone Laboratories, Incorporated Tungsten niobate electrochromic device
US4340506A (en) * 1978-07-26 1982-07-20 Tdk Electronics Co., Ltd. Photoelectric transfer device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4203769A (en) * 1975-07-15 1980-05-20 Eastman Kodak Company Radiation-sensitive elements having an antistatic layer containing amorphous vanadium pentoxide
US4211475A (en) * 1977-06-29 1980-07-08 Centre Technique de l'Industrie Horiogere "Ceterhor" Laboratoire d'Electrochimie-Faculte des Sciences et des Techniques Electro-optic display device using a vitreous solid ion-conductive material
US4340506A (en) * 1978-07-26 1982-07-20 Tdk Electronics Co., Ltd. Photoelectric transfer device
US4225216A (en) * 1979-02-21 1980-09-30 Bell Telephone Laboratories, Incorporated Tungsten niobate electrochromic device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990014630A1 (fr) * 1989-05-16 1990-11-29 Rest Manufacturing, Inc. Systeme electronique d'affichage d'informations a distance
US5169565A (en) * 1990-03-31 1992-12-08 Samsung Electronics Anti-dazzling and electrostatic charge preventive transparent coating material, method thereof and video display coated therewith
US20100210450A1 (en) * 2002-12-10 2010-08-19 Ppg Industries Ohio, Inc. Tungsten comprising nanomaterials and related nanotechnology
US20100184901A1 (en) * 2009-01-20 2010-07-22 Ppg Industries Ohio, Inc. Transparent, colorless infrared radiation absorbing compositions comprising nanoparticles
US8324300B2 (en) 2009-01-20 2012-12-04 Ppg Industries Ohio, Inc Transparent, colorless infrared radiation absorbing compositions comprising nanoparticles
US9870842B2 (en) 2013-06-12 2018-01-16 Ppg Industries Ohio, Inc. Rapidly curable electrically conductive clear coatings

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Publication number Publication date
GB2000641A (en) 1979-01-10
FR2396420A1 (fr) 1979-01-26
JPS5442991A (en) 1979-04-05
CH634690A5 (fr) 1983-02-15
DE2828390A1 (de) 1979-01-11
FR2396420B1 (fr) 1982-02-05
GB2000641B (en) 1982-01-06

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