US4139833A - Resistance temperature sensor - Google Patents
Resistance temperature sensor Download PDFInfo
- Publication number
- US4139833A US4139833A US05/743,706 US74370676A US4139833A US 4139833 A US4139833 A US 4139833A US 74370676 A US74370676 A US 74370676A US 4139833 A US4139833 A US 4139833A
- Authority
- US
- United States
- Prior art keywords
- film
- silicon monoxide
- nickel film
- resistance
- nickel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/006—Thin film resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
- H01C17/08—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/22—Elongated resistive element being bent or curved, e.g. sinusoidal, helical
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49082—Resistor making
- Y10T29/49085—Thermally variable
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49082—Resistor making
- Y10T29/49099—Coating resistive material on a base
Definitions
- the present invention relates generally to temperature sensors, and, in particular, to a thin-film deposited temperature sensor.
- the most commonly used resistance thermometer at the present time includes a sensor constructed of a wire coil, the resistance of which changes in a predetermined known manner as a function of temperature.
- These wire coils have been made of nickel, platinum, tungsten, nicrome (an alloy of nickel and chromium) and other materials having a suitably high temperature coefficient of resistivity (TCR).
- TCR temperature coefficient of resistivity
- the material must have high electrical resistance which, in turn, necessitates the use of a relatively long length of wire of small diameter. The reason for this is a high resistance sensor has correspondingly high change of resistance for a change of temperature, and, therefore, is more easily calibrated than a low resistance sensor would be.
- a wire coil can only be loosely supported on an insulating substrate and must be annealed in order to obtain a predictable and repeatable resistance. All of these requirements result in the wire coil being relatively fragile and susceptible to breakage from vibrations, shock, and, as well, contamination from external materials.
- thin-film temperature sensors can be constructed having very high resistance and at the same time be exceptionally rugged and not readily damaged by normally occurring external circumstances.
- thin-film temperature sensors may be deposited on very small substrates providing an improved advantage with respect to size, weight and response time over coil sensors. Still further, shocks and vibrations do not affect deposited film resistors since the substrate is relatively rigid and the resistor may be coated, making it substantially immune to contamination from the outside.
- a polished ceramic substrate is provided with an insulation layer of silicon monoxide (SiO).
- a nickel metal thin-film is then laid down onto the insulation layer in a helical or serpentine pattern taking up a desirably small area, but at the same time giving a high electrical resistance.
- a cover or protective layer of silicon monoxide is then deposited over the resistor serving to protect it from the possibility of outside contamination.
- FIG. 1 is a block diagram of the method for making the thin-film resistor temperature sensor of this invention.
- FIG. 2 is a plan view of the temperature sensor.
- FIG. 3 is an elevational, sectional view taken along the line 3--3 of FIG. 2.
- the temperature sensor of this invention is enumerated generally as at 10, and is seen to include a base or substrate 11 on a surface on which there is arranged a serpentine resistor 12, the ends of which connecter pads 13 and 14 are interconnected with external apparatus (not shown), via leads 15 and 16. More particularly, and as best shown in FIG. 3, the substrate 11 has one surface formed into a flat surface 17 onto which an insulation layer 18 is deposited with the resistor 12 deposited thereover. Finally, the connector pads 13 and 14 and leads 15 and 16 are laid down and the entire conductive film portions covered with an insulating and protective layer 18 (e.g., SiO).
- an insulating and protective layer 18 e.g., SiO
- the substrate 11 is preferably constructed of high density alumina (Al 2 0 3 ) and in a practical embodiment was finished to 0.140 ⁇ 0.140 ⁇ 0.0015 inches, although other geometries may be used such as circular (FIG. 2).
- a major surface is ground and polished to form the flat, smooth surface 17 and thoroughly cleaned.
- the substrate 11 is then loaded onto a suitable deposition fixture which, in turn, is placed on a rotating substrate carrier and entered into a vacuum evaporation system (not shown).
- the vacuum system includes four different deposition stations for depositing, respectively, insulation layer 18, resistor 12, cover insulating layer 19 and connector pads 13 and 14.
- the first step is the vapor deposition of silicon monoxide (SiO) onto the flat, polished substrate surface to form the insulation precoat 18.
- the precoated substrate is moved to the next station where metallic nickel is vapor deposited via a suitable mask to provide a spiral-shaped or serpentine resistor 12 on the insulating layer 18.
- the partially completed unit is moved to a further station where the connector pads 13 and 14 of gold or nickel alloy are deposited.
- the partially completed sensors are removed from the vacuum system and vacuum annealed at 805° F. to effect both stabilization of grain structure and resistance value.
- the final annealed resistance of 12 was 1000 ohms at 70° F.
- Gold leads 15 and 16 are then secured to the connection pads 13 and 14 (e.g., by resistance welding), after which the assembly is once more placed in the vacuum deposition chamber where it is overcoated with silicon monoxide to form the protective cover 19.
- the completed temperature sensor is removed from the vacuum deposition chamber, cemented to a metal end cap, after which it is subjected to 400° F. for 48 hours to stabilize the resistor 12 further, and, as well, cure the cement used to secure the substrate and metal cap together.
- the substrate may be constructed of beryllium oxide and the temperature sensitive resistor 12 of platinum.
- a thin-film resistance temperature sensor possessed of high accuracy, which is exceptionally rugged in construction and has the small size and weight advantages associated with thin-film construction.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Thermistors And Varistors (AREA)
Abstract
A polished ceramic substrate is provided with an insulation layer of silicon monoxide (SiO), over which a nickel metal thin-film is laid down in a spiral or serpentine pattern, taking up a desirably small area, but at the same time giving a high electrical resistance. Finally, a cover or protective layer of silicon monoxide is then deposited over the resistor, serving to protect it from the possibility of outside contamination.
Description
1. Field of the Invention
The present invention relates generally to temperature sensors, and, in particular, to a thin-film deposited temperature sensor.
2. Description of the Prior Art
The most commonly used resistance thermometer at the present time includes a sensor constructed of a wire coil, the resistance of which changes in a predetermined known manner as a function of temperature. These wire coils have been made of nickel, platinum, tungsten, nicrome (an alloy of nickel and chromium) and other materials having a suitably high temperature coefficient of resistivity (TCR). To achieve the requisite high degree of accuracy with such a wire sensor, the material must have high electrical resistance which, in turn, necessitates the use of a relatively long length of wire of small diameter. The reason for this is a high resistance sensor has correspondingly high change of resistance for a change of temperature, and, therefore, is more easily calibrated than a low resistance sensor would be. In addition, a wire coil can only be loosely supported on an insulating substrate and must be annealed in order to obtain a predictable and repeatable resistance. All of these requirements result in the wire coil being relatively fragile and susceptible to breakage from vibrations, shock, and, as well, contamination from external materials.
On the other hand, thin-film temperature sensors can be constructed having very high resistance and at the same time be exceptionally rugged and not readily damaged by normally occurring external circumstances. In addition, thin-film temperature sensors may be deposited on very small substrates providing an improved advantage with respect to size, weight and response time over coil sensors. Still further, shocks and vibrations do not affect deposited film resistors since the substrate is relatively rigid and the resistor may be coated, making it substantially immune to contamination from the outside.
In accordance with the practice of this invention, a polished ceramic substrate is provided with an insulation layer of silicon monoxide (SiO). A nickel metal thin-film is then laid down onto the insulation layer in a helical or serpentine pattern taking up a desirably small area, but at the same time giving a high electrical resistance. Finally, a cover or protective layer of silicon monoxide is then deposited over the resistor serving to protect it from the possibility of outside contamination.
FIG. 1 is a block diagram of the method for making the thin-film resistor temperature sensor of this invention.
FIG. 2 is a plan view of the temperature sensor.
FIG. 3 is an elevational, sectional view taken along the line 3--3 of FIG. 2.
With reference now to the drawings and in particular to FIGS. 2 and 3, the temperature sensor of this invention is enumerated generally as at 10, and is seen to include a base or substrate 11 on a surface on which there is arranged a serpentine resistor 12, the ends of which connecter pads 13 and 14 are interconnected with external apparatus (not shown), via leads 15 and 16. More particularly, and as best shown in FIG. 3, the substrate 11 has one surface formed into a flat surface 17 onto which an insulation layer 18 is deposited with the resistor 12 deposited thereover. Finally, the connector pads 13 and 14 and leads 15 and 16 are laid down and the entire conductive film portions covered with an insulating and protective layer 18 (e.g., SiO).
As to detailed aspects, the substrate 11 is preferably constructed of high density alumina (Al2 03) and in a practical embodiment was finished to 0.140 × 0.140 × 0.0015 inches, although other geometries may be used such as circular (FIG. 2). A major surface is ground and polished to form the flat, smooth surface 17 and thoroughly cleaned. The substrate 11 is then loaded onto a suitable deposition fixture which, in turn, is placed on a rotating substrate carrier and entered into a vacuum evaporation system (not shown). For the practice of this invention, the vacuum system includes four different deposition stations for depositing, respectively, insulation layer 18, resistor 12, cover insulating layer 19 and connector pads 13 and 14.
In process, the first step is the vapor deposition of silicon monoxide (SiO) onto the flat, polished substrate surface to form the insulation precoat 18. Then, the precoated substrate is moved to the next station where metallic nickel is vapor deposited via a suitable mask to provide a spiral-shaped or serpentine resistor 12 on the insulating layer 18. Next, the partially completed unit is moved to a further station where the connector pads 13 and 14 of gold or nickel alloy are deposited.
At this stage the partially completed sensors are removed from the vacuum system and vacuum annealed at 805° F. to effect both stabilization of grain structure and resistance value. In a practical construction of the invention the final annealed resistance of 12 was 1000 ohms at 70° F.
Gold leads 15 and 16 are then secured to the connection pads 13 and 14 (e.g., by resistance welding), after which the assembly is once more placed in the vacuum deposition chamber where it is overcoated with silicon monoxide to form the protective cover 19.
As a final matter, the completed temperature sensor is removed from the vacuum deposition chamber, cemented to a metal end cap, after which it is subjected to 400° F. for 48 hours to stabilize the resistor 12 further, and, as well, cure the cement used to secure the substrate and metal cap together.
As alternatives, the substrate may be constructed of beryllium oxide and the temperature sensitive resistor 12 of platinum.
In the practice of this invention, there is provided a thin-film resistance temperature sensor possessed of high accuracy, which is exceptionally rugged in construction and has the small size and weight advantages associated with thin-film construction.
Claims (3)
1. A deposited thin-film resistance temperature sensor, comprising:
a high-density alumina substrate having a flat polished surface;
a first silicon monoxide layer vapor deposited onto said substrate flat polished surface;
a sinuous length of evaporated nickel film deposited onto said first silicon monoxide layer;
first and second connector pads deposited onto said nickel film spaced from one another along the nickel film that amount necessary to define a predetermined magnitude of electrical resistance for said nickel film;
first and second gold leads respectively resistance welded to said first and second connector pads; and
a second silicon monoxide layer vapor deposited over said nickel film and said connector pads leaving outer end portions of said gold leads exposed.
2. A deposited thin-film temperature sensor as in claim 1, in which the nickel film is annealed at approximately 805° F. to stabilize film resistance.
3. A method of making a thin-film temperature sensing device, comprising:
forming a flat polished surface on a high-density alumina substrate;
vapor depositing a film of silicon monoxide onto the flat polished surface of the substrate;
vapor depositing a spiral-shaped metallic nickel film onto the silicon monoxide film;
vapor depositing metallic connection pads onto said nickel film;
heating the substrate with silicon monoxide and metallic nickel films thereon to a temperature of 805° F. (429° C.) in a low gas pressure environment to effect stabilization of the nickel film grain structure and resistance value;
resistance welding a gold lead to each connection pad;
vapor depositing a silicon monoxide film over the nickel film and connection pads; and
heating the assembly to 400° F. (204° C.) for approximately 48 hours to stabilize the resistance of the nickel film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/743,706 US4139833A (en) | 1976-11-22 | 1976-11-22 | Resistance temperature sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/743,706 US4139833A (en) | 1976-11-22 | 1976-11-22 | Resistance temperature sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
US4139833A true US4139833A (en) | 1979-02-13 |
Family
ID=24989847
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US05/743,706 Expired - Lifetime US4139833A (en) | 1976-11-22 | 1976-11-22 | Resistance temperature sensor |
Country Status (1)
Country | Link |
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US (1) | US4139833A (en) |
Cited By (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4217570A (en) * | 1978-05-30 | 1980-08-12 | Tektronix, Inc. | Thin-film microcircuits adapted for laser trimming |
US4286377A (en) * | 1978-07-03 | 1981-09-01 | General Electric Company | Method of manufacture for a resistance heater and temperature sensor |
US4308080A (en) * | 1979-02-07 | 1981-12-29 | Micropore International Limited | Method of shaping coils |
FR2498323A1 (en) * | 1981-01-21 | 1982-07-23 | Trw Inc | METHOD FOR MANUFACTURING A TEMPERATURE SENSITIVE DEVICE AND DEVICE |
US4349808A (en) * | 1979-05-23 | 1982-09-14 | Dr. Johannes Heidenhain Gmbh | Bolometer |
US4400684A (en) * | 1981-08-31 | 1983-08-23 | Ford Motor Company | Fast response temperature sensor |
EP0193015A2 (en) * | 1985-02-26 | 1986-09-03 | Novasina AG | Probe for measuring electrical conductivity |
WO1987005146A1 (en) * | 1986-02-13 | 1987-08-27 | Rosemount Inc. | Thin film platinum resistance thermometer with high temperature diffusion barrier |
EP0240435A1 (en) * | 1986-04-04 | 1987-10-07 | Thomson-Csf | Resistor integrated on a semiconductor substrate |
US4806739A (en) * | 1984-12-11 | 1989-02-21 | Ngk Spark Plug Co., Ltd. | Plate-like ceramic heater |
US4808009A (en) * | 1986-06-05 | 1989-02-28 | Rosemount, Inc. | Integrated semiconductor resistance temperature sensor and resistive heater |
US4841273A (en) * | 1987-12-18 | 1989-06-20 | Therm-O-Disc, Incorporated | High temperature sensing apparatus |
US4878770A (en) * | 1987-09-09 | 1989-11-07 | Analog Devices, Inc. | IC chips with self-aligned thin film resistors |
US5026971A (en) * | 1990-01-08 | 1991-06-25 | General Electric Company | Temperature control system for a heating oven using a glass-ceramic temperature sensor |
US5041809A (en) * | 1990-01-08 | 1991-08-20 | General Electric Company | Glass-ceramic temperature sensor for heating ovens |
US5053740A (en) * | 1990-01-11 | 1991-10-01 | General Electric Company | Porcelain enamel temperature sensor for heating ovens |
US5053743A (en) * | 1989-04-14 | 1991-10-01 | Sgs-Thomson Microelectronics S.A. | High voltage spiral resistor |
EP0477744A2 (en) * | 1990-09-25 | 1992-04-01 | Bernd Arnheiter | Temperature sensor |
US5118983A (en) * | 1989-03-24 | 1992-06-02 | Mitsubishi Denki Kabushiki Kaisha | Thermionic electron source |
US5134248A (en) * | 1990-08-15 | 1992-07-28 | Advanced Temperature Devices, Inc. | Thin film flexible electrical connector |
DE4243410A1 (en) * | 1992-12-17 | 1994-06-30 | Mannesmann Ag | Prodn. of thin film with resistance |
US5431806A (en) * | 1990-09-17 | 1995-07-11 | Fujitsu Limited | Oxygen electrode and temperature sensor |
US5543775A (en) * | 1994-03-03 | 1996-08-06 | Mannesmann Aktiengesellschaft | Thin-film measurement resistor and process for producing same |
US5798684A (en) * | 1995-03-31 | 1998-08-25 | Ishizuka Electronics Corporation | Thin-film temperature sensor |
US5837113A (en) * | 1990-12-06 | 1998-11-17 | Fujitsu Limited | Small glass electrode |
DE19742696A1 (en) * | 1997-09-26 | 1999-05-06 | Siemens Matsushita Components | Component with planar conductor track |
US6110855A (en) * | 1998-03-31 | 2000-08-29 | The United States Of America As Represented By The United States Department Of Energy | Process for strengthening aluminum based ceramics and material |
WO2002021541A2 (en) * | 2000-09-06 | 2002-03-14 | Koninklijke Philips Electronics N.V. | High voltage low inductance circuit protection resistor |
KR100393945B1 (en) * | 2001-02-24 | 2003-08-06 | 이노스텍 (주) | Method for manufactuing a metal thin film resistor device and method for manufacturing a metal thin film temperature sensor using the same |
US6617956B1 (en) * | 1999-01-14 | 2003-09-09 | Sensotherm Temperatursensorik Gmbh | Platinum temperature sensor and method for producing same |
US20050241959A1 (en) * | 2004-04-30 | 2005-11-03 | Kenneth Ward | Chemical-sensing devices |
US20100074298A1 (en) * | 2008-09-04 | 2010-03-25 | Nyffenegger Johannes F | Very high speed thin film rtd sandwich |
US20100281663A1 (en) * | 2009-05-06 | 2010-11-11 | Maschinenfabrik Spaichingen Gmbh | Apparatus for the connection of articles via at least one connection element plasticizable by heat |
US20110128692A1 (en) * | 2009-11-30 | 2011-06-02 | Stephen Jospeh Gaul | Thin film resistor |
WO2012123188A1 (en) * | 2011-03-17 | 2012-09-20 | Asml Netherlands B.V. | Electrostatic clamp, lithographic apparatus, and device manufacturing method |
US20120249281A1 (en) * | 2011-04-04 | 2012-10-04 | General Electric Company | Inductor and eddy current sensor including an inductor |
US8786397B1 (en) * | 2013-02-07 | 2014-07-22 | Excelliance Mos Corporation | Electric field resistor |
US20140329120A1 (en) * | 2013-05-03 | 2014-11-06 | Board Of Trustees Of The Leland Stanford Junior University | Rechargeable battery safety by multifunctional separators and electrodes |
US9932852B2 (en) | 2011-08-08 | 2018-04-03 | General Electric Company | Sensor assembly for rotating devices and methods for fabricating |
JP2019158807A (en) * | 2018-03-16 | 2019-09-19 | 三菱重工業株式会社 | Thin film pressure sensor |
US20220410267A1 (en) * | 2021-06-24 | 2022-12-29 | Baker Hughes Oilfield Operations Llc | Method of forming a high temperature sensor |
US11953380B2 (en) | 2019-05-21 | 2024-04-09 | Nextinput, Inc. | Combined near and mid infrared sensor in a chip scale package |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US3478191A (en) * | 1967-01-23 | 1969-11-11 | Sprague Electric Co | Thermal print head |
US3607386A (en) * | 1968-06-04 | 1971-09-21 | Robert T Galla | Method of preparing resistive films |
US3845443A (en) * | 1972-06-14 | 1974-10-29 | Bailey Meter Co | Thin film resistance thermometer |
-
1976
- 1976-11-22 US US05/743,706 patent/US4139833A/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3478191A (en) * | 1967-01-23 | 1969-11-11 | Sprague Electric Co | Thermal print head |
US3607386A (en) * | 1968-06-04 | 1971-09-21 | Robert T Galla | Method of preparing resistive films |
US3845443A (en) * | 1972-06-14 | 1974-10-29 | Bailey Meter Co | Thin film resistance thermometer |
Cited By (57)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4288776A (en) * | 1978-05-30 | 1981-09-08 | Tektronix, Inc. | Passivated thin-film hybrid circuits |
US4217570A (en) * | 1978-05-30 | 1980-08-12 | Tektronix, Inc. | Thin-film microcircuits adapted for laser trimming |
US4286377A (en) * | 1978-07-03 | 1981-09-01 | General Electric Company | Method of manufacture for a resistance heater and temperature sensor |
US4308080A (en) * | 1979-02-07 | 1981-12-29 | Micropore International Limited | Method of shaping coils |
US4349808A (en) * | 1979-05-23 | 1982-09-14 | Dr. Johannes Heidenhain Gmbh | Bolometer |
FR2498323A1 (en) * | 1981-01-21 | 1982-07-23 | Trw Inc | METHOD FOR MANUFACTURING A TEMPERATURE SENSITIVE DEVICE AND DEVICE |
US4400684A (en) * | 1981-08-31 | 1983-08-23 | Ford Motor Company | Fast response temperature sensor |
US4806739A (en) * | 1984-12-11 | 1989-02-21 | Ngk Spark Plug Co., Ltd. | Plate-like ceramic heater |
EP0193015A2 (en) * | 1985-02-26 | 1986-09-03 | Novasina AG | Probe for measuring electrical conductivity |
US4719441A (en) * | 1985-02-26 | 1988-01-12 | Navasina Ag | Sensor for measuring electrical conductivity |
EP0193015A3 (en) * | 1985-02-26 | 1990-05-09 | Novasina AG | Probe for measuring electrical conductivity |
US4791398A (en) * | 1986-02-13 | 1988-12-13 | Rosemount Inc. | Thin film platinum resistance thermometer with high temperature diffusion barrier |
WO1987005146A1 (en) * | 1986-02-13 | 1987-08-27 | Rosemount Inc. | Thin film platinum resistance thermometer with high temperature diffusion barrier |
EP0240435A1 (en) * | 1986-04-04 | 1987-10-07 | Thomson-Csf | Resistor integrated on a semiconductor substrate |
FR2596922A1 (en) * | 1986-04-04 | 1987-10-09 | Thomson Csf | INTEGRATED RESISTANCE ON A SEMICONDUCTOR SUBSTRATE |
US4792840A (en) * | 1986-04-04 | 1988-12-20 | Thomson-Csf | Resistor integrated on a semiconductor substrate |
US4808009A (en) * | 1986-06-05 | 1989-02-28 | Rosemount, Inc. | Integrated semiconductor resistance temperature sensor and resistive heater |
US4878770A (en) * | 1987-09-09 | 1989-11-07 | Analog Devices, Inc. | IC chips with self-aligned thin film resistors |
US4841273A (en) * | 1987-12-18 | 1989-06-20 | Therm-O-Disc, Incorporated | High temperature sensing apparatus |
US5118983A (en) * | 1989-03-24 | 1992-06-02 | Mitsubishi Denki Kabushiki Kaisha | Thermionic electron source |
US5053743A (en) * | 1989-04-14 | 1991-10-01 | Sgs-Thomson Microelectronics S.A. | High voltage spiral resistor |
US5041809A (en) * | 1990-01-08 | 1991-08-20 | General Electric Company | Glass-ceramic temperature sensor for heating ovens |
US5026971A (en) * | 1990-01-08 | 1991-06-25 | General Electric Company | Temperature control system for a heating oven using a glass-ceramic temperature sensor |
US5053740A (en) * | 1990-01-11 | 1991-10-01 | General Electric Company | Porcelain enamel temperature sensor for heating ovens |
US5134248A (en) * | 1990-08-15 | 1992-07-28 | Advanced Temperature Devices, Inc. | Thin film flexible electrical connector |
US5431806A (en) * | 1990-09-17 | 1995-07-11 | Fujitsu Limited | Oxygen electrode and temperature sensor |
EP0477744A2 (en) * | 1990-09-25 | 1992-04-01 | Bernd Arnheiter | Temperature sensor |
EP0477744A3 (en) * | 1990-09-25 | 1992-07-22 | Bernd Arnheiter | Temperature sensor |
US5837113A (en) * | 1990-12-06 | 1998-11-17 | Fujitsu Limited | Small glass electrode |
DE4243410A1 (en) * | 1992-12-17 | 1994-06-30 | Mannesmann Ag | Prodn. of thin film with resistance |
US5543775A (en) * | 1994-03-03 | 1996-08-06 | Mannesmann Aktiengesellschaft | Thin-film measurement resistor and process for producing same |
US5798684A (en) * | 1995-03-31 | 1998-08-25 | Ishizuka Electronics Corporation | Thin-film temperature sensor |
DE19742696A1 (en) * | 1997-09-26 | 1999-05-06 | Siemens Matsushita Components | Component with planar conductor track |
US6110855A (en) * | 1998-03-31 | 2000-08-29 | The United States Of America As Represented By The United States Department Of Energy | Process for strengthening aluminum based ceramics and material |
US6617956B1 (en) * | 1999-01-14 | 2003-09-09 | Sensotherm Temperatursensorik Gmbh | Platinum temperature sensor and method for producing same |
WO2002021541A2 (en) * | 2000-09-06 | 2002-03-14 | Koninklijke Philips Electronics N.V. | High voltage low inductance circuit protection resistor |
WO2002021541A3 (en) * | 2000-09-06 | 2002-10-24 | Koninkl Philips Electronics Nv | High voltage low inductance circuit protection resistor |
KR100393945B1 (en) * | 2001-02-24 | 2003-08-06 | 이노스텍 (주) | Method for manufactuing a metal thin film resistor device and method for manufacturing a metal thin film temperature sensor using the same |
US20050241959A1 (en) * | 2004-04-30 | 2005-11-03 | Kenneth Ward | Chemical-sensing devices |
US8118485B2 (en) * | 2008-09-04 | 2012-02-21 | AGlobal Tech, LLC | Very high speed thin film RTD sandwich |
US20100074298A1 (en) * | 2008-09-04 | 2010-03-25 | Nyffenegger Johannes F | Very high speed thin film rtd sandwich |
US8689431B2 (en) * | 2009-05-06 | 2014-04-08 | Maschinenfabrik Spaichingen Gmbh | Apparatus for the connection of articles via at least one connection element plasticizable by heat |
US20100281663A1 (en) * | 2009-05-06 | 2010-11-11 | Maschinenfabrik Spaichingen Gmbh | Apparatus for the connection of articles via at least one connection element plasticizable by heat |
US20110128692A1 (en) * | 2009-11-30 | 2011-06-02 | Stephen Jospeh Gaul | Thin film resistor |
US8426745B2 (en) * | 2009-11-30 | 2013-04-23 | Intersil Americas Inc. | Thin film resistor |
WO2012123188A1 (en) * | 2011-03-17 | 2012-09-20 | Asml Netherlands B.V. | Electrostatic clamp, lithographic apparatus, and device manufacturing method |
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