US3901783A - Method of producing selenium charge electrophotographic recording plates - Google Patents
Method of producing selenium charge electrophotographic recording plates Download PDFInfo
- Publication number
- US3901783A US3901783A US439807A US43980774A US3901783A US 3901783 A US3901783 A US 3901783A US 439807 A US439807 A US 439807A US 43980774 A US43980774 A US 43980774A US 3901783 A US3901783 A US 3901783A
- Authority
- US
- United States
- Prior art keywords
- selenium
- electrophotographic recording
- preparing
- glow discharge
- plate according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 title claims abstract description 66
- 229910052711 selenium Inorganic materials 0.000 title claims abstract description 66
- 239000011669 selenium Substances 0.000 title claims abstract description 66
- 238000000034 method Methods 0.000 title claims abstract description 27
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims description 35
- 239000002184 metal Substances 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 3
- 239000005083 Zinc sulfide Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 3
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 abstract description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052793 cadmium Inorganic materials 0.000 abstract description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052719 titanium Inorganic materials 0.000 abstract description 2
- 239000010936 titanium Substances 0.000 abstract description 2
- 229910052725 zinc Inorganic materials 0.000 abstract description 2
- 239000011701 zinc Substances 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 6
- 241001270131 Agaricus moelleri Species 0.000 description 5
- 239000000126 substance Substances 0.000 description 4
- 238000007792 addition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 229940065285 cadmium compound Drugs 0.000 description 2
- 150000001662 cadmium compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 150000002611 lead compounds Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 150000003752 zinc compounds Chemical class 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/14—Inert intermediate or cover layers for charge-receiving layers
Definitions
- recording plates with a conducting substrate on which there is deposited a photoconductive layer of semiconducting material on which a charge pattern is produced by the charge and exposure to light, corresponding to the image pattern.
- This charge pattern is made visible by the application of a suitable inking powder which, in the course of a further step of the process, is transferred from the recording plate to a sheet of paper where it is fixed.
- recording plates employing selenium as the semiconducting material.
- Certain additives to the selenium improve the electrophotographic properties.
- the metal substrate on which the selenium layer is deposited consists either of a rigid metal plate or of a metal cylinder, or else of a flexible metal foil, such as a steel tape. Onto this metal substrate the selenium is usually deposited by way of evaporation under vacuum.
- the known electrophotographic recording plates with a selenium layer still have certain disadvantages. First, it is impossible for larger black areas to be reproduced as such, because the charge on the selenium layer is chiefly positioned in the marginal areas of the thus imaged surfaces.
- a method of preparing a selenium charge electrophotographic recording plate having a selenium layer deposited on a metal substrate comprising the steps of depositing selenium on a metal substrate by evaporation under vacuum to form a selenium layer, depositing a thin coating of a semiconducting material on a metal plate, subjecting the selenium coated metal substrate and said metal plate having a semiconducting material thereon to a glow discharge whereby a portion of said semiconducting material is deposited on said selenium layer.
- the application of the semiconducting substance is effected in such a way that a metal plate provided with a coating of the semiconducting substance to be used, is arranged as the cathode in a glow discharge, while the anode is formed by the selenium layer of the recording plate. Both the cathode and the anode are arranged at a certain distance apart each other in a suitable gas atmosphere.
- gases for the glow discharge it has proved particularly suitable to use inert gases, such as nitrogen or rare gases.
- a further improvement in the reproducibility of the selenium layers can be obtained in that the metal plate used as the cathode, is provided on its surface facing the selenium surface, with a pattern of recesses. These recesses may also extend entirely through the metal plate forming the cathode, so that the cathode is a perforated metal plate.
- the glow discharge is preferably carried out under a pressure in the order of 10 to 10 torr (mm Hg). In the course of this, there is used a voltage in the order of 800 to 2,000 V, with the current flow amounting to values between 20 and 200 milliamperes.
- the selenium surface is exposed to this glow discharge for a period of time ranging between half a minute and sixty minutes.
- an inert gas is used for the glow discharge, hence a gas which, under the glow-discharge conditions does not chemically combine with either the substrate material or the selenium.
- a suitable inert gas it is possible to use e.g. nitrogen or else a rare gas, such as argon.
- oxygen may be used as the gas for the glow discharge.
- Oxygen of course, reacts with the selenium, but this reaction has no influence upon the desired effect. No disadvantageous effects upon the electrophotographic properties of the selenium have been noticed when using oxygen.
- Suitable semiconducting materials for depositing onto the selenium surface are, in particular, semiconducting cadmium compounds, semiconducting zinc compounds and semiconducting titanium oxide.
- cadmium sulfide and cadmium selenide are particularly suitable.
- zinc oxide and zinc sulfide are particularly suitable.
- the selenium is deposited by way of evaporation under vacuum in the form of a layer in the order of 10 to microns thick.
- the selenium may still be provided with small additions.
- the selenium-coated substrate is placed at a suitable distance from a metal plate provided with a thin coating of the semiconducting material to be deposited, in an inert gas atmosphere under a pressure of l to torr, and a voltage is applied ranging between 800 and 2000 V.
- the metal plate provided with the layer of semiconducting substance to be deposited forms the cathode while the selenium layer forms the anode.
- glow discharge there will flow a current ranging between and 200 milliamperes. Action lasts for a period ranging between half a minute and sixty minutes.
- the resulting electrophotographic recording plates show substantially improved reproducibility, especially of larger black areas, and permit reproduction of a large number of gray scales.
- the surface of a selenium layer is subjected as the cathode to the glow discharge.
- a polished plate of aluminum is preferably used as the anode.
- Glow discharge is carried out under the above described conditions causing a great number of slight imperfections in the selenium surface during glow discharge. The imperfections are uniformly distributed over the entire selenium surface, however, the disintegration of the image into individual spots does not occur as is the case when using an optical raster.
- a method of preparing a selenium charge electrophotographic recording plate having a selenium layer deposited on a metal substrate comprising the steps of:
- selenium on a metal substrate by evaporation under vacuum to form a selenium layer; depositing a thin coating of a semiconducting material selected from the group consisting of cadmium sulfide, zinc oxide and zinc sulfide on a metal plate; thereafter sputtering a portion of said semiconducting material on said selenium layer by subjecting the selenium coated metal substrate and said metal plate to a glow discharge.
- a semiconducting material selected from the group consisting of cadmium sulfide, zinc oxide and zinc sulfide
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photoreceptors In Electrophotography (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19732306332 DE2306332B2 (de) | 1973-02-09 | 1973-02-09 | Verfahren zur Herstellung eines elektrophotographischen Aufzeichnungsmaterials |
DE19732306333 DE2306333C3 (de) | 1973-02-09 | 1973-02-09 | Elektrofotografische Aufzeichnungsplatte |
Publications (1)
Publication Number | Publication Date |
---|---|
US3901783A true US3901783A (en) | 1975-08-26 |
Family
ID=25764664
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US439807A Expired - Lifetime US3901783A (en) | 1973-02-09 | 1974-02-05 | Method of producing selenium charge electrophotographic recording plates |
Country Status (3)
Country | Link |
---|---|
US (1) | US3901783A (ko) |
JP (1) | JPS5116779B2 (ko) |
ES (1) | ES423026A1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4889746A (en) * | 1987-04-18 | 1989-12-26 | Fujitsu Limited | Process for manufacturing an optical recording medium |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2189580A (en) * | 1937-05-29 | 1940-02-06 | Gen Electric | Method of making a photoelectric cell |
US2903631A (en) * | 1958-06-17 | 1959-09-08 | Gen Electric | Selenium cells |
US3650737A (en) * | 1968-03-25 | 1972-03-21 | Ibm | Imaging method using photoconductive element having a protective coating |
US3733258A (en) * | 1971-02-03 | 1973-05-15 | Rca Corp | Sputter-etching technique for recording holograms or other fine-detail relief patterns in hard durable materials |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2886434A (en) * | 1955-06-06 | 1959-05-12 | Horizons Inc | Protected photoconductive element and method of making same |
US3607258A (en) * | 1966-01-06 | 1971-09-21 | Xerox Corp | Electrophotographic plate and process |
FR1602789A (en) * | 1968-12-31 | 1971-01-25 | Upholstered chair-seats |
-
1974
- 1974-02-05 US US439807A patent/US3901783A/en not_active Expired - Lifetime
- 1974-02-07 JP JP49014980A patent/JPS5116779B2/ja not_active Expired
- 1974-02-08 ES ES423026A patent/ES423026A1/es not_active Expired
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2189580A (en) * | 1937-05-29 | 1940-02-06 | Gen Electric | Method of making a photoelectric cell |
US2903631A (en) * | 1958-06-17 | 1959-09-08 | Gen Electric | Selenium cells |
US3650737A (en) * | 1968-03-25 | 1972-03-21 | Ibm | Imaging method using photoconductive element having a protective coating |
US3733258A (en) * | 1971-02-03 | 1973-05-15 | Rca Corp | Sputter-etching technique for recording holograms or other fine-detail relief patterns in hard durable materials |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4889746A (en) * | 1987-04-18 | 1989-12-26 | Fujitsu Limited | Process for manufacturing an optical recording medium |
Also Published As
Publication number | Publication date |
---|---|
JPS49113633A (ko) | 1974-10-30 |
ES423026A1 (es) | 1976-10-01 |
JPS5116779B2 (ko) | 1976-05-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: ALCATEL N.V., DE LAIRESSESTRAAT 153, 1075 HK AMSTE Free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNOR:INTERNATIONAL STANDARD ELECTRIC CORPORATION, A CORP OF DE;REEL/FRAME:004718/0023 Effective date: 19870311 |