US3872344A - Image pickup tube - Google Patents

Image pickup tube Download PDF

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Publication number
US3872344A
US3872344A US289278A US28927872A US3872344A US 3872344 A US3872344 A US 3872344A US 289278 A US289278 A US 289278A US 28927872 A US28927872 A US 28927872A US 3872344 A US3872344 A US 3872344A
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United States
Prior art keywords
layer
target
disposed
conductive layer
scanning region
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US289278A
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English (en)
Inventor
Kazuo Shimizu
Okio Yoshida
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Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
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Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to GB4285472A priority Critical patent/GB1386687A/en
Priority to US289278A priority patent/US3872344A/en
Priority to FR7233275A priority patent/FR2199616B1/fr
Priority to NL7212747A priority patent/NL7212747A/xx
Priority to DE2249457A priority patent/DE2249457A1/de
Application granted granted Critical
Publication of US3872344A publication Critical patent/US3872344A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/08—Electrodes intimately associated with a screen on or from which an image or pattern is formed, picked-up, converted or stored, e.g. backing-plates for storage tubes or collecting secondary electrons
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/26—Image pick-up tubes having an input of visible light and electric output
    • H01J31/28—Image pick-up tubes having an input of visible light and electric output with electron ray scanning the image screen
    • H01J31/34—Image pick-up tubes having an input of visible light and electric output with electron ray scanning the image screen having regulation of screen potential at cathode potential, e.g. orthicon
    • H01J31/38—Tubes with photoconductive screen, e.g. vidicon

Definitions

  • An image pickup tube comprises a cylindrical envelope, a target disposed at the front portion of said envelope, and an electron gun assembly so housed in said envelope as to shoot electron beams against said target, said target having a signal pickup electrode disposed outside the effective scanning region of the target.
  • FIGIO FIG12 IMAGE PICKUP TUBE The present invention relates to an image pickup tube, in particular, to one having a signal pickup electrode which is so improved as to reduce the residual image.
  • One of the TV image pickup tubes priorly known is a vidicon tube, wherein a transparent electric conductive layer is formed on the inner surface of the faceplate and functions as a signal pickup electrode, and a photoelectric conversion layer is vapor-deposited on said electric conductive layer and functions as a photoelectric conversion target.
  • the transparent electric conductive layer of the target is impressed with positive voltage, while the photoelectric conversion layer is uniformly negative-charged as it is scanned with electron beams from the electron gun. Consequently, there appears an electric field about and perpendicular to said photoelectric conversion layer.
  • the photoelectric conversion layer works as a capacitor because of its high resistivity, and its electrostatic capacity is inversely proportional to its thickness. Accordingly, the thicker the layer is made, the smaller its capacity will become and the more reduced will be the residual image on it. However, if the layer is made thicker, the image resolution is proportionally degraded.
  • the present invention aims to provide an image pickup tube which can minimize residual image and yet resolve the image effectively.
  • the image pickup tube comprises a cylindrical envelope having a faceplate, a target disposed on the inner surface of said faceplate, and an electron gun so housed in said envelope as to emit an electron beam against said target.
  • the target is comprised of a photoelectric conversion layer disposed on the inner surface of the faceplate, a high resistivity layer disposed on said photoelectric conversion layer and a signal pickup electrode disposed outside the effective scanning region of the target.
  • a focus coil Around this image pickup tube there will be arranged in a well-known manner a focus coil, an electron beam deflection coil and an alignment coil.
  • FIG. 1 is a sectional view of an image pickup tube according to the present invention
  • FIGS. 2 to 4 are side sectional views of various targets of the image pickup tube
  • FIG. 5 is a front view of the image pickup tube having either one of the targets shown in FIGS. 2 to 4;
  • FIG. 6 is a side sectional view of another target having a transparent electric conductive layer disposed outside the effective scanning region;
  • FIG. 7 is a front sectional view of the target illustrated in FIG. 6;
  • FIG. 8 is a front sectional view of another target
  • FIG. 9 is a side sectional view of another target.
  • FIG. 10 is a side sectional view of still another target provided with a transparent electric conductive layer on the outer surface of the faceplate of the envelope;
  • FIG. 11 is a side sectional view of the front portion of the image pickup tube attached with the target shown in FIG. 10;
  • FIG. 12 is a side sectional view of another target having an insulation layer mounted on the central surface of the electric conductive layer deposited nearly all over the inner surface of the faceplate;
  • FIG. 13 is a side sectional view of a target of multilayer type having a ring-shaped electrode and a central electrode layer.
  • the image pickup tube comprises a cylindrical envelope 11 having at its front end a faceplate 12, a target 13 on the inner surface of said faceplate 12, an electron gun 14 so housed in said envelope 11 as to-emit an electron beam against said target 13.
  • a reflective coil 15, a focus coil 16 and an alignment coil 17 are arranged in a well-known manner.
  • a cadmium selenide layer 18, 2 micrometers thick is prepared on the inner surface of the faceplate 12.
  • An electric conductive layer 19 serving as a signal pickup electrode covers the periphery and that surface of said cadmium selenide layer 18 not corresponding to the effective scanning region of the target 13 to be scanned with electron beams.
  • 0.2-micrometer thick layer 20 of a high resistivity material such as arsenic trisulfide is vapor-deposited.
  • a vidicon tube provided with a target of such construction was provided, upon repeated tests, to possess a high photoelectric sensitivity and an excellent effect of reducing any residual image.
  • the level of residual image signal in the third field at the end of scanning became 0% after the start of light-break and after start of-lightsupply. Notably, it was found that after the start of light-break, no residual image signal was observed in the first field upon the end of scanning.
  • the target of this invention which is of multilayer type, has an electrostatic capacity smaller than that of a conventional target of uni-layer type.
  • the good residual image reducing effect'comes from the fact that the image signal pickup electrode covers not all the surface of the photoelectric conversion layer 18 but only on that portion of the layer 18 which does not correspond to the effective scanning region of the target; the capacity of the layer 18 determined by the diameter of the layer 18 is utilized for reduction of residual image in addition to the capacity determined by the thickness of the layer 18.
  • the resistivity of the photoelectric conversion layer of the target is the resistivity of the photoelectric conversion layer of the target.
  • the photoelectric conversion layer 18 of the target shown in FIG. 2 has a resistivity of less than IO Q-crn and that if the layer 18 has a resistivity as small as lOQ-cm, the target does not so function to reduce the residual image.
  • the target employed in the image pickup tube of this invention is provided with a signal pickup electrode on the periphery of its photoelectric conversion layer, and said photoelectric conversion layer has been selected to have a resistivity ranging from 10 O-cm to 10 Q-cm.
  • the light from the object enters the cadmium selenide layer 18 through the faceplate 12 made of,
  • the light then controls the electrons and holes in cadmium selenide layer 18 so that the electrons radially moves toward the signal pickup electrode 19 and that the holes are trapped and arranged in the forbidding band of layer 18 in accordance with their energy levels.
  • the surface potential of the arsenic trisulfide layer 20 is elevated.
  • An electron beam scanned on the surface of said layer 20 and the holes in layer 20 re-unify with the electrons of the electron beam, whereby discharge current flows through the target. In this case, the trapped holes do not re-unify with the electrons of the beam right after impinging the beam.
  • a first coming electron does not re-unify with a hole but reaches signal pickup if it penetrates into the layer 20 within the time necessary for forming one picture element; it is a second coming electron that re-unifies with a hole. Thanks to such electron-hole reunification, two electrons enter the target per hole. As a result, a vidicon tube with the target as shown in FIG. 2 attains a sensitivity favorably doubled.
  • the number of electrons which enters the target from the beam is proportionate to that of holes in the effective scanning region of the-target. Namely, not only the holes trapped in the target during the time required for forming one frame, but those energized by the light from the object before and during the electron beam scanning contribute effectively to the enhancement of the signal output.
  • the holes other than those accumulated in cadmium selenide layer 18 also help effect a vidicon-operation and therefore contribute to residual image reduction. This means that it is desirable that layer 18 possess a high electronic conductivity and that the holes remain in their original places or move toward and be trapped beneath the scanning surface of cadmium selenide layer 18.
  • FIG. 3 Another target according to the present invention as illustrated in FIG. 3 comprises a cadmium selenide layer 18, a cadmium selenite layer 21 formed on said cadmium selenide layer 18, an arsenic trisulfide layer 20 formed on said cadmium selenite layer 21, and a signal pickup electrode 19 covering the peripheries of cadmium selenide layer 18 and cadmium selenite layer 21 and the circumferential portion of the surface of cadmium selenite layer 21.
  • the target of this invention shown in FIG. 4 is, like that shown in FIG. 3, constituted of three layers 18, 20 and 21, but provided with a signal pickup electrode 19 formed between cadmium selenide layer 18 and faceplate 12 and outside the effective scanning region of the target. Because of this specific disposition of signal pickup electrode 19, electrons in the cadmium selenide layer 18 are easily moved toward the electrode 19.
  • the signal pickup electrode 19 may be made of either transparent tin oxide (SnO or opaque aluminium or tin.
  • the photoelectric layer 18 may be made of photoelectric conversion materials other than cadmium selenide such as cadmium sulfide and cadmium sulfoselenide-all the material having a resistivity ranging from 10 Q-cm to l0 Q-cm.
  • the layer 20 may be formed of, in place of arsenic trisulfide, any one of such materials as control the electron flow from the electron beam into the target to lessen the dark signal current and sustain the image resolution of the image pickup tube.
  • Suitable materials are, for example, arsenic disulfide, zinc sulfide, arsenic trisulfide, germanium selenide, arsenic triselenide, zinc selenide and antimony trisulfide.
  • the targets shown in FIGS. 2, 3 and 4 each having a signal pickup electrode disposed outside the effective scanning region are quite effective in residual image reduction, but are not free from the following phenomenon.
  • a rectangular white object witha black frame in the white background is photographed by vidicon, the white object appears gray when it is reproduced on the screen of the reproduction monitor.
  • blackframephenomenoni This phenomenon is inevitably observed also when a black rectangular object with a white frame in the black background is photographed by a vidicon tube.
  • FIG. 6 shows a target which is, like the target of FIG. I
  • a transparent electric conductive layer 22 sandwiched between the layer 18 and the faceplate 12 and insulated from the electrode 19.
  • This transparent electric conductive layer 22 has a surface area at least as large as that of the effective scanning region of the target. Since layer 22 is insulated from electrode 19, it functions merely to keep any portion of photoelectric conversion layer 18 at the same potential. The specific use of the transparent electric conductive layer 22 makes the target free from the black-frame phenomenon.
  • the target of FIG. 6 works to reduce the residual image for the following reason. Almost all the picture elements of a raster formed on the effective scanning region of the target are resolved thanks to photoelectric conversion layer 18 whose electrostatic capacity is small, and the residual picture elements are reduced by the electrostatic capacity between signal pickup electrode 19 and transparent electric conductive layer 22.
  • the capacity between electrode 19 and layer 22 is in reverse proportion to the sum total of the thickness of the target (measured from layer 22 to the scanning surface) and the minimum distance between electrode 19 and layer 22. Electronic conduction may occur during a long operation of the target between signal pickup electrode 19 and transparent electric conductive layer 22. If this is the case, the capacity of photoelectric conversion layer 18 grows larger than that of a target provided with no transparent electric conductive layer 22. However, the small capacity in the minimum space between electrode 19 and layer 22 further reduces the residual image.
  • the target of FIG. 6, as it is provided with among other things a transparent electric layer 22, makes the target free from any black-frame phenomenon and reduces the residual image.
  • FIGS. 7 and 8 show two different arrangements of the signal electrode 19 and the transparent electric conductive layer 22 employed in the target of FIG. 6.
  • a disc-shaped electrode 19 with a rectangular window surrounds a rectangular electric conductive layer 22.
  • a ring-shaped electrode 19 surrounds a discshaped electric conductive layer 22.
  • the electrode 19 and the layer 22 can overlap to some extent one upon the other since there is formed between them a photoelectric conversion layer having a great resistivity.
  • FIG. 9 shows still another target according to the present invention which is identical with that as illustrated in FIG. 4 except that it is provided with a transparent electric conductive layer 22 deposited on the inner surface of the faceplate 11.
  • the front sectional view of this target is therefore similar to FIG. 8.
  • the transparent electric conductive layer 22 is an electrically low resistive layer of chemical compound such as a tin oxide (SnO layer (Nesa layer) or a metal or chemical compound layer through which specific light beams can pass into the photoelectric conversion layer 18. It is possible to control the photosensitivity of these targets by adjusting the voltage to be impressed on the transparent electric conductive layer 22. Further, it is possible with these targets to penetrate lights other than those from the object into that portion of layer 18 between electrode 19 and layer 22, or scan the electron beam on the electrode 19 topenetrate electrons of the beam into said portion layer 18, thereby to vary the resistivity of said portion of layer 18 and ultimately control the photosensitivity of the target.
  • a tin oxide SnO layer (Nesa layer)
  • metal or chemical compound layer through which specific light beams can pass into the photoelectric conversion layer 18. It is possible to control the photosensitivity of these targets by adjusting the voltage to be impressed on the transparent electric conductive layer 22. Further, it is possible with these targets to penetrate lights other than those from the object into that portion of
  • FIG. 10 Another target of this invention, as shown in FIG. 10, is of multi-layer type similar to that of FIG. 3 in that it is made up of cadmium selenide layer 18, rign-shaped electrode 19, a high resistivity layer 20 and a cadmium selenite layer 21.
  • This target is characterized by a transparent electric conductive layer 22 mounted on the outer surface of the faceplate 12.
  • the target is, as illustrated in FIG. 11, fitted to the front end of the envelope 11 by means of a stainless steel ring 23 fixed on the outer periphery of electrode 19. Said stainless steel ring 23 is covered with a ring 24 made of a flat indium bar, which attaches the target assembly airtightly to the envelope l1.
  • a transparent electric conductive layer 22 is deposited on the inner surface of the faceplate 12, and an insulation layer 25 is formed on said layer 22.
  • This target is characterized in that it is provided with an insulation layer 25 formed on that surface of the layer 22 which corresponds to the effective scanning region of the target.
  • a cadmium selenide layer 18, a cadmium selenite layer 21 and an arsenic trisulfide layer 20 are successively formed.
  • the transparent electric conductive layer 22 acts as a signal pickup electrode and is therefore impressed with target voltage.
  • the electric field about the insulation layer 25 is uniform in potential in the radial direction of the target. It is supposed that the electric field of a uniform potential prevents the electrons coming into the target upon the electron beam scanning from penetrating into the electric conductive layer 22 through the insulation layer 25. Consequently, the electrons move through the cadmium selenide layer 18 in the direction of arrows in FIG. 12 toward the periphery of layer 22.
  • FIG. 13 shows another target according to the present invention which is almost identical with that illustrated in FIG. 12.
  • the target is different from thetarget of FIG. 12 in that its transparent electric conductive layer 22 formed on the faceplate 12 is covered up with an insulating layer 26. Because of this specific construction, electrons coming from the electron beam into the target move toward the periphery of the photoelectric conversionlayer 18. As the electrons are all picked up by the electrode 19, residual image is greatly reduced and no black-frame phenomenon results from the image pickup tube according to the present invention.
  • An image pickup tube comprising a vacuum envelope containing an electron gun, a target disposed on the front of the envelope and a signal pickup electrode, said target having an effective scanning region which is scanned by the electron beam emitted by said electron the improvement wherein:
  • said target comprises a first photo-conductive layer made of cadmium selenide disposed on the inner surface of the faceplate of said envelope, a second layer disposed on said first photo-conductive layer, a high resistivity layer disposed on said second layer and a transparent electrically conductive layer disposed on the outer central surface of said first photo-conductive layer corresponding to said effective scanning region;
  • said signal pickup electrode is located so as to reduce the residual image on said effective scanning region of said target, said signal pickup electrode being disposed only on the edge portion of said target and not on said effective scanning region of said target, said signal pickup electrode surrounding said transparent conductive layer and being spaced from said transparent conductive layer.
  • An image pickup tube according to claim 1 wherein said signal pickup electrode is disposed on the 5 peripheries of said first and second layers and on the edge portion of said second layer but not on the central surface corresponding to said effective scanning region.
  • An image pickup tube according to claim 1 wherein said signal pickup electrode is disposed on the outer surface of said photo-conductive layer in such a manner as to surround said transparent electrically conductive layer with a space therebetween.
  • said transparent electrically conductive layer is a rectangular layer the entire surface of which corresponds to said effective scanning region
  • said signal pickup electrode is a disc with a rectangular window and surrounds said transparent conductive layer with a space therebetween.
  • An image pickup tube according to claim 1 wherein said transparent electrically conductive layer is a disc the surface area of which is larger than that of said effective scanning region, and said signal pickup electrode is a ring and surrounds said transparent conductive layer with a space therebetween.
  • An image pickup tube according to claim 1 further comprising an insulating layer disposed on and covering up said transparent electrically conductive layer.
  • said high resistivity layer is formed of one of the group consisting of arsenic disulfide, zinc sulfide, arsenic trisulfide, germanium selenide, arsenic triselenide, zinc selenide and antimony trisulfide.
  • An image pickup tube according to claim 1 wherein said second layer is formed of cadmium selenite, and said high resistivity layer is formed of arsenic trisulfide.
  • An image pickup tube comprising a vacuum envelope containing an electron gun, a target disposed on the front of the envelope and a signal pickup electrode, said target having an effective scanning region which is scanned by the electron beam emitted by said electron the improvement wherein:
  • said target comprises a first photo-conductive layer made of cadmium selenide disposed on the inner surface of the faceplate of said envelope, a second layer disposed on said first photo-conductive layer, a high resistivity layer disposed on said second layer and a transparent electrically conductive layer disposed on the outer surface of the faceplate; and
  • said signal pickup electrode is located so as to reduce the residual image on said effective scanning region of said target, said signal pickup electrode being wherein said second layer is formed of cadmium selenite, and said high resistivity layer is formed of arsenic trisulfide.
  • An image pickup tube comprising a vacuum envelope containing an electron gun, a target disposed on the front of the envelope and a signal pickup electrode, said target having an effective scanning region which is scanned by the electron beam emitted by said electron the improvement wherein:
  • said signal pickup electrode is located so as to reduce the residual image on said effective scanning region of said target, said signal pickup electrode comprising a transparent electrically conductive layer disposed on the inner surface of the faceplate of said envelope, the central surface of said transparent conductive layer corresponding to said effective scanning region and being covered with an insulating layer;
  • said target comprises a first photo-conductive layer made of cadmium selenide disposed on said signal pickup electrode, a second layer disposed on said first photo-conductive layer and a high resistivity layer disposed on said second layer;
  • said signal pickup electrode further comprising electrically conductive electrode means disposed only on the edge portion of said target and not on said effective scanning region of said target.
  • An image pickup tube wherein said high resistivity layer is formed of one of the group consisting of arsenic disulfide, zinc sulfide, arsenic trisulfide, germanium selenide, arsenic triselenide, zinc selenide and antimony trisulfide.
  • An image pickup tube according to claim 12 wherein said second layer is formed of cadmium selenite, and said high resistivity layer is formed of arsenic trisulfide.

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
US289278A 1972-09-15 1972-09-15 Image pickup tube Expired - Lifetime US3872344A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GB4285472A GB1386687A (en) 1972-09-15 1972-09-15 Image pickup tube
US289278A US3872344A (en) 1972-09-15 1972-09-15 Image pickup tube
FR7233275A FR2199616B1 (enrdf_load_stackoverflow) 1972-09-15 1972-09-20
NL7212747A NL7212747A (enrdf_load_stackoverflow) 1972-09-15 1972-09-21
DE2249457A DE2249457A1 (de) 1972-09-15 1972-10-09 Bildaufnahmeroehre

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
GB4285472A GB1386687A (en) 1972-09-15 1972-09-15 Image pickup tube
US289278A US3872344A (en) 1972-09-15 1972-09-15 Image pickup tube
FR7233275A FR2199616B1 (enrdf_load_stackoverflow) 1972-09-15 1972-09-20
NL7212747A NL7212747A (enrdf_load_stackoverflow) 1972-09-15 1972-09-21
DE2249457A DE2249457A1 (de) 1972-09-15 1972-10-09 Bildaufnahmeroehre

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US3872344A true US3872344A (en) 1975-03-18

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US289278A Expired - Lifetime US3872344A (en) 1972-09-15 1972-09-15 Image pickup tube

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US (1) US3872344A (enrdf_load_stackoverflow)
DE (1) DE2249457A1 (enrdf_load_stackoverflow)
FR (1) FR2199616B1 (enrdf_load_stackoverflow)
GB (1) GB1386687A (enrdf_load_stackoverflow)
NL (1) NL7212747A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0193983A1 (en) * 1985-02-22 1986-09-10 Koninklijke Philips Electronics N.V. Television camera tube including a stigmator for beam correction
EP0381189A3 (en) * 1989-02-03 1991-07-24 Hitachi, Ltd. Image pick-up tube

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60140636A (ja) * 1983-12-28 1985-07-25 Toshiba Corp 撮像管の光導電タ−ゲツトおよびその製造方法

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US2487665A (en) * 1947-05-02 1949-11-08 Rca Corp Image tube
US2774002A (en) * 1954-12-21 1956-12-11 Itt Image tube
US2851625A (en) * 1952-10-30 1958-09-09 Rca Corp Image tube
US3020442A (en) * 1959-05-11 1962-02-06 Westinghouse Electric Corp Photoconductive target
US3136909A (en) * 1959-07-10 1964-06-09 Rca Corp Storage device having a photo-conductive target
US3155859A (en) * 1961-02-09 1964-11-03 Gen Electric Target electrode assembly
US3218505A (en) * 1962-07-23 1965-11-16 Hughes Aircraft Co Moving target indicator tube having rectifying barrier target electrode
US3271608A (en) * 1962-04-30 1966-09-06 Machlett Lab Inc X-ray vidicon target assembly
US3280357A (en) * 1962-03-01 1966-10-18 Rca Corp Light sensitive device
US3350591A (en) * 1961-02-21 1967-10-31 Rca Corp Indium doped pickup tube target
US3569763A (en) * 1966-02-14 1971-03-09 Tokyo Shibaura Electric Co Multilayer photoconductive device having adjacent layers of different spectral response
US3714488A (en) * 1970-09-19 1973-01-30 Matsushita Electronics Corp Pick-up tube envelope sealant extending into groove of annular target support

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US3571646A (en) * 1967-07-17 1971-03-23 Tokyo Shibaura Electric Co Photoconductive target with n-type layer of cadmium selenide including cadmium chloride and cuprous chloride
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US2487665A (en) * 1947-05-02 1949-11-08 Rca Corp Image tube
US2851625A (en) * 1952-10-30 1958-09-09 Rca Corp Image tube
US2774002A (en) * 1954-12-21 1956-12-11 Itt Image tube
US3020442A (en) * 1959-05-11 1962-02-06 Westinghouse Electric Corp Photoconductive target
US3136909A (en) * 1959-07-10 1964-06-09 Rca Corp Storage device having a photo-conductive target
US3155859A (en) * 1961-02-09 1964-11-03 Gen Electric Target electrode assembly
US3350591A (en) * 1961-02-21 1967-10-31 Rca Corp Indium doped pickup tube target
US3280357A (en) * 1962-03-01 1966-10-18 Rca Corp Light sensitive device
US3271608A (en) * 1962-04-30 1966-09-06 Machlett Lab Inc X-ray vidicon target assembly
US3218505A (en) * 1962-07-23 1965-11-16 Hughes Aircraft Co Moving target indicator tube having rectifying barrier target electrode
US3569763A (en) * 1966-02-14 1971-03-09 Tokyo Shibaura Electric Co Multilayer photoconductive device having adjacent layers of different spectral response
US3714488A (en) * 1970-09-19 1973-01-30 Matsushita Electronics Corp Pick-up tube envelope sealant extending into groove of annular target support

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0193983A1 (en) * 1985-02-22 1986-09-10 Koninklijke Philips Electronics N.V. Television camera tube including a stigmator for beam correction
EP0381189A3 (en) * 1989-02-03 1991-07-24 Hitachi, Ltd. Image pick-up tube
US5218264A (en) * 1989-02-03 1993-06-08 Hitachi, Ltd. Image pick-up tube and apparatus having the same

Also Published As

Publication number Publication date
FR2199616B1 (enrdf_load_stackoverflow) 1977-01-14
DE2249457A1 (de) 1974-04-18
GB1386687A (en) 1975-03-12
FR2199616A1 (enrdf_load_stackoverflow) 1974-04-12
NL7212747A (enrdf_load_stackoverflow) 1974-03-25

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