US3849193A - Method of preparation of single crystal films - Google Patents
Method of preparation of single crystal films Download PDFInfo
- Publication number
- US3849193A US3849193A US00255549A US25554972A US3849193A US 3849193 A US3849193 A US 3849193A US 00255549 A US00255549 A US 00255549A US 25554972 A US25554972 A US 25554972A US 3849193 A US3849193 A US 3849193A
- Authority
- US
- United States
- Prior art keywords
- constituents
- crystal
- solution
- crystal substrate
- rare earth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 title claims abstract description 40
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 239000000470 constituent Substances 0.000 claims abstract description 24
- 239000010408 film Substances 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 20
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 17
- 239000000243 solution Substances 0.000 claims abstract description 17
- 150000002910 rare earth metals Chemical class 0.000 claims abstract description 13
- 239000007864 aqueous solution Substances 0.000 claims abstract description 12
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 12
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical group [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052742 iron Inorganic materials 0.000 claims abstract description 7
- 239000010409 thin film Substances 0.000 claims abstract description 7
- 238000001953 recrystallisation Methods 0.000 claims abstract description 5
- 150000003839 salts Chemical class 0.000 claims description 14
- 239000000126 substance Substances 0.000 claims description 7
- 229910052783 alkali metal Inorganic materials 0.000 claims description 6
- 150000001340 alkali metals Chemical class 0.000 claims description 6
- 238000000354 decomposition reaction Methods 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- ZPDRQAVGXHVGTB-UHFFFAOYSA-N gallium;gadolinium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Gd+3] ZPDRQAVGXHVGTB-UHFFFAOYSA-N 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 4
- 238000004090 dissolution Methods 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000002585 base Substances 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 230000007704 transition Effects 0.000 claims description 3
- 229910021311 NaFeO2 Inorganic materials 0.000 claims 1
- 239000002223 garnet Substances 0.000 abstract description 7
- 238000011065 in-situ storage Methods 0.000 abstract description 5
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 15
- 235000011121 sodium hydroxide Nutrition 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- -1 for example Chemical class 0.000 description 2
- 230000001089 mineralizing effect Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 150000003746 yttrium Chemical class 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G49/00—Compounds of iron
- C01G49/0018—Mixed oxides or hydroxides
- C01G49/0054—Mixed oxides or hydroxides containing one rare earth metal, yttrium or scandium
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/30—Three-dimensional structures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31826—Of natural rubber
- Y10T428/31841—Next to cellulosic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31855—Of addition polymer from unsaturated monomers
- Y10T428/3188—Next to cellulosic
- Y10T428/31895—Paper or wood
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31855—Of addition polymer from unsaturated monomers
- Y10T428/31909—Next to second addition polymer from unsaturated monomers
- Y10T428/31913—Monoolefin polymer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31855—Of addition polymer from unsaturated monomers
- Y10T428/31931—Polyene monomer-containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31971—Of carbohydrate
- Y10T428/31975—Of cellulosic next to another carbohydrate
- Y10T428/31978—Cellulosic next to another cellulosic
- Y10T428/31982—Wood or paper
Definitions
- ABSTRACT A method of preparation of a single-crystal thin film of a rare earth mixed oxide having a garnet structure of the formula T M O where M respresents iron and T represents Yttrium.
- a single-crystal substrate is placed in an aqueous solution which is capable of liberating the constituents of the single-crystal film in situ; the solution is brought to a high temperature in order to dissolve the constituents of the single-crystal film; and these constituents are then deposited on the single-crystal substrate by recrystallization.
- This invention relates to a method of preparation of single-crystal films, especially thin films of mixed oxides having a garnet structure.
- the invention applies more particularly to the preparation of films of rare-earth single-crystals, synthetic double oxides corresponding to the formula T3M5O12 in which is oxygen, M is iron which may be replaced either wholly or in part by aluminum, gallium or one of the transition elements having an atomic number within the range of 21 to 28 inclusive and in which T represents yttrium or one of the rare-earth elements having an atomic number within the range of 62 to 71, or alternatively a mixture of said rare-earth elements with each other or with yttrium.
- the single-crystal films defined in the foregoing exhibit advantageous magnetic properties which permit their use in particular in the ultra-high frequency range (as resonant insulators, transducers, surface-wave amplifiers). These films can also be employed in logic and storage devices of the domain-displacement type.
- One of the methods employed up to the present time for obtaining films of rare-earth single-crystals consists in growing a single crystal T M O, on a seed of T M O by hydrothermal synthesis. This method was carried out in practice as follows: the T M O was dissolved in the polycrystalline form in a 20 M sodium hydroxide solution, in the bottom portion of an autoclave which was heated to 400C; the single crystal was then recrystallized on a seed of T M O in the top portion of the autoclave which was heated to 375C.
- Another conventional method of formation of a single-crystal film consisted in growing a single crystal of T M O, on a seed of GdGaG (gadolinium-galliumgarnet).
- a solution of 20 M NaOH or 20 M KOH at a temperature in the vicinity of 400C was employed as solvent. But it proved difficult to apply this method to the preparation of thin films since the seed was frequently attacked by the solvent.
- the dissolution of the polycrystal T M O in the ammonium chloride was a very slow process, the seed of GdGaG was attacked by NH Cl and the single-crystal deposit was not uniform.
- the method according to the invention overcomes the disadvantages recalled in the foregoing, especially insofar as it permits rapid dissolution of the constituents of the single crystal and consequently results in thin and homogeneous single-crystal films.
- One of the advantages ofthc invention lies in the fact that a singlecrystal film can be deposited on a single-crystal substrate having a different chemical composition.
- the method under consideration is primarily distinguished by the fact that a single-crystal substrate is placed in an aqueous solution which contains compounds having a base of constituents destined to form the single-crystal film and which is capable ofliberating said constituents in situ, said solution is brought to a high temperature so as to dissolve said constituents, and said constituents are then deposited by recrystallization on said single-crystal substrate.
- thin single crystal films of a rare-earth mixed oxide having a garnet structure, and corresponding to the formula T M O as hereinabove defined. are deposited on a single-crystal substrate consisting of gadoliniumgallium-garnet-(GdGaG).
- composition is not intended to imply any limitation of the invention and the method can be employed for any other deposition of a single-crystal film of mixed oxides having a garnet structure on a predetermined single-crystal substrate.
- the method can also be applied to the preparation of single-crystal thin films of different magnetic compounds of garnets such as, for example, the orthoferrites of rare earths or the spinel ferrites.
- the method according to the invention is carried out in an autoclave of heat-resisting steel lined with platinum, gold or silver.
- This autoclave is hermetically sealed by means of a system of gaskets of the Bridgman type and connected to a manometer by a highpressure flexible capillary wire.
- the autoclave is placed in a furnace having two separate heating zones which are regulated independently in order that it may thus be possible to control the temperature difference between the top and the bottom of the autoclave.
- the constituents which are intended to yield in situ the mixed oxide having a garnet structure by double decomposition are placed in an aqueous solution in the bottom of the autoclave which is the hot portion,
- the single-crystal substrate is placed in the top of the autoclave which is the cold portion,
- the aqueous solution is brought to a high temperature and high pressure in such manner as to decompose and dissolve the constituents of the mixed oxide, then to transport them into the cold portion of the autoclave in which they crystallize on the single-crystal substrate.
- the temperature difference existing within the autoclave gives rise to convection currents which facilitate the transport of material from the hot portion to the cold portion.
- the aqueous solution is constituted by a solution of a mixed salt of a metal and of an alkali metal and a hydroxide or a salt of rare earth or of yttrium.
- a mixed salt of a metal and of an alkali metal and a hydroxide or a salt of rare earth or of yttrium for example, it is possible to employ NaFeO or KFeO and Y (Oi-U Double decomposition results in formation on the one hand of sodium hydroxide or of potassium having a low concentration which acts as transporting and mineralizing agent and on the other hand of single-crystal film constituents which will be deposited on the single-crystal substrate.
- the aqueous solution is constituted by a solution of a mixed salt of rare earth or of yttrium and of an alkali metal and a hydroxide or a salt of a metal.
- the operational temperature is within the range of 450C to 550C. A temperature difference of 20C to 70C is maintained between the bottom portion and the top portion of the autoclave.
- the coefficient of filling in the autoclave is 0.4 to 0.6.
- EXAMPLE Use is made of an autoclave having a useful volume of 130 cm and lined with silver.
- the autoclave is closed and placed in a furnace having two temperature zones in order that the bottom portion of the autoclave should be at a temperature of 500C and that the top portion should be at a temperature of 450C.
- the pressure is then 600 bars.
- the seeding process is carried out for a period of 24 hours.
- T being a substance selected from the group consisting of the rare earth elements having an atomic number within the range of 62 to 71.
- the aqueous solution being a solution of a mixed salt of a metal and of an alkali metal and a hydroxide or a salt of rare earth or of yttrium.
- the aqueous solution being a solution of a mixed salt of rare earth or of yttrium and of an alkali metal and a hydroxide or a salt of a metal.
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Thin Magnetic Films (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR717118889A FR2138410B1 (enrdf_load_stackoverflow) | 1971-05-25 | 1971-05-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US3849193A true US3849193A (en) | 1974-11-19 |
Family
ID=9077594
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US00255549A Expired - Lifetime US3849193A (en) | 1971-05-25 | 1972-05-22 | Method of preparation of single crystal films |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3849193A (enrdf_load_stackoverflow) |
| CA (1) | CA968677A (enrdf_load_stackoverflow) |
| FR (1) | FR2138410B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1384745A (enrdf_load_stackoverflow) |
| IL (1) | IL39507A (enrdf_load_stackoverflow) |
| IT (1) | IT958962B (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2120147C1 (ru) * | 1996-09-06 | 1998-10-10 | Акционерное общество закрытого типа "Тетра" | Тонкопленочный магнитный материал |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3047429A (en) * | 1959-03-27 | 1962-07-31 | Rca Corp | Magnetic recording medium comprising coatings of ferrite particles of the molar composite amno.bzno.cfe2o3 |
| US3100158A (en) * | 1960-11-02 | 1963-08-06 | Rca Corp | Methods for obtaining films of magnetic spinel crystals on substrates |
| US3404026A (en) * | 1965-04-06 | 1968-10-01 | Army Usa | Method of forming magnetic ferrite films |
| US3429740A (en) * | 1965-09-24 | 1969-02-25 | North American Rockwell | Growing garnet on non-garnet single crystal |
| US3486937A (en) * | 1967-03-24 | 1969-12-30 | Perkin Elmer Corp | Method of growing a single crystal film of a ferrimagnetic material |
| US3573099A (en) * | 1969-12-22 | 1971-03-30 | Ibm | Process for making garnet films |
| US3607390A (en) * | 1969-09-29 | 1971-09-21 | Ibm | Single crystal ferrimagnetic films |
| US3697320A (en) * | 1971-01-11 | 1972-10-10 | Hewlett Packard Co | Method and flux for growing single crystals of garnet or ortho ferrites |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1544556A (fr) * | 1966-11-15 | 1968-10-31 | Western Electric Co | Procédé de croissance de grenats magnétiques et matières ainsi obtenues |
-
1971
- 1971-05-25 FR FR717118889A patent/FR2138410B1/fr not_active Expired
-
1972
- 1972-05-13 GB GB2347272A patent/GB1384745A/en not_active Expired
- 1972-05-22 US US00255549A patent/US3849193A/en not_active Expired - Lifetime
- 1972-05-23 IL IL39507A patent/IL39507A/en unknown
- 1972-05-24 CA CA142,912A patent/CA968677A/en not_active Expired
- 1972-05-24 IT IT68642/72A patent/IT958962B/it active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3047429A (en) * | 1959-03-27 | 1962-07-31 | Rca Corp | Magnetic recording medium comprising coatings of ferrite particles of the molar composite amno.bzno.cfe2o3 |
| US3100158A (en) * | 1960-11-02 | 1963-08-06 | Rca Corp | Methods for obtaining films of magnetic spinel crystals on substrates |
| US3404026A (en) * | 1965-04-06 | 1968-10-01 | Army Usa | Method of forming magnetic ferrite films |
| US3429740A (en) * | 1965-09-24 | 1969-02-25 | North American Rockwell | Growing garnet on non-garnet single crystal |
| US3486937A (en) * | 1967-03-24 | 1969-12-30 | Perkin Elmer Corp | Method of growing a single crystal film of a ferrimagnetic material |
| US3607390A (en) * | 1969-09-29 | 1971-09-21 | Ibm | Single crystal ferrimagnetic films |
| US3573099A (en) * | 1969-12-22 | 1971-03-30 | Ibm | Process for making garnet films |
| US3697320A (en) * | 1971-01-11 | 1972-10-10 | Hewlett Packard Co | Method and flux for growing single crystals of garnet or ortho ferrites |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2138410A1 (enrdf_load_stackoverflow) | 1973-01-05 |
| IL39507A (en) | 1976-05-31 |
| CA968677A (en) | 1975-06-03 |
| FR2138410B1 (enrdf_load_stackoverflow) | 1973-05-25 |
| IL39507A0 (en) | 1972-07-26 |
| GB1384745A (en) | 1975-02-19 |
| IT958962B (it) | 1973-10-30 |
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