US3800177A - Integrated light emitting diode display device with housing - Google Patents

Integrated light emitting diode display device with housing Download PDF

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Publication number
US3800177A
US3800177A US00209838A US20983871A US3800177A US 3800177 A US3800177 A US 3800177A US 00209838 A US00209838 A US 00209838A US 20983871 A US20983871 A US 20983871A US 3800177 A US3800177 A US 3800177A
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US
United States
Prior art keywords
light emitting
emitting diodes
address lines
row address
faceplate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US00209838A
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English (en)
Inventor
M Russ
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Motorola Solutions Inc
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Motorola Inc
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Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Priority to US00209838A priority Critical patent/US3800177A/en
Priority to JP12481672A priority patent/JPS4870493A/ja
Priority to DE2262412A priority patent/DE2262412C3/de
Priority to US411614A priority patent/US3899826A/en
Application granted granted Critical
Publication of US3800177A publication Critical patent/US3800177A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

Definitions

  • an integral light display comprising a matrix of light emitting diodes in an integral structure which is scannable to produce an alpha numeric character display.
  • the light emitting diodes are arranged in a plurality of rows and columns with the anodes of each diode connected by row address lines and the cathodes of each column being common, so as to be connectable to column address lines.
  • a strobing format logic address system is provided for lighting the individual diodes to emission for producing an alpha numeric character or graphic display.
  • the integral structure includes the transparent faceplate for the finished packaged device.
  • a method of making the foregoing integrated light display which includes the steps of forming the anodes of the light emitting diodes in a semiconductor substrate of a type opposite to that forming the conductivity of the anodes, preferably by diffusion.
  • Anode connecting row address lines are then formed interconnecting rows of anodes, the contacts to the anodes being of annular form to provide an opening for the light emitting from the junction of the light emitting diode.
  • transparent faceplate is secured over the surface of the substrate and the row address lines, the substrate is then etched into a plurality of sections to separate the cathodes of the light emitting diodes into a plurality of columns.
  • the backside of the substrate may be thinned prior to separation into the column lines to provide better electrical connection to the cathodes of the light emitting diodes.
  • the package of the light emitting diode array is completed by securing the faceplate of the array into a suitable housing.
  • This invention relates to alpha numeric displays and more particularly to an integral light emitting diode diplay. Still more particularly, the invention is related to a light emitting diode display which is scannably addressable.
  • Visual readout devices such as alpha numeric displays are available in several formats utilizing various light emitting devices such as incandescent lamps, gaseous discharge lamps, electroluminescent arrays and more recently light emitting diode arrays. Such devices are utilized for many purposes such as computer readouts, process control instrumentation, aircraft and automotive instrument panels, and various other indicators such as clocks and gauges. Since most, if not all of the aforementioned uses rely on semiconductor electronics, it is highly desirable that the alpha numeric display be compatible with the voltages and currents normally utilized in such semiconductor circuits and be compatible with its speed of operation. A major objection to the presently most widely used visual readout, the gaseous discharge lamp of the cathode glow variety is the high voltage required for initiating the glow discharge. Such readouts require the use of interface semiconductors having high reverse voltage breakdown characteristics. Obviously, the light emitting diode array format, being itself a semiconductor device, is highly desirable for a visual readout since it is inherently compatible with the electronics of the semiconductor circuits.
  • a further object of the invention is to provide an integral light emitting diode alpha numeric display which is relatively economic and compatible with standard systems.
  • a monolithic light display comprising a matrix of light emitting diodes in an integral structure formed on a transparent faceplate, said light emitting diodes being arranged in columns and rows, a first layer of metallization contacting the anodes of all of said light emitting diodes in each of the plurality of rows, said metallization having holes formed therein to permit the emission of light through said rows of metallization, and a column address metallization for contacting each of the cathodes of the plurality of columns of said diodes.
  • FIG. 1 is a plan view of an integral light emitting diode array in accordance with the preferred embodiment of the invention, depicted somewhat schematically;
  • FIGS. 2 & 3 are cross sectional views of FIG. 1, taken on lines 2 2 and 3-3 respectively;
  • FIGS. 49 are cross sectional views depicting schematically successive stages in the manufacture of the light emitting diode array.
  • one of the current limiting values for a light emitting diode and hence light output will be based on the heat or power dissipation characteristics of the substrate to which it is attached, it may be preferable to use a relatively high thermal conductivity glassy material.
  • the light emitting diode array comprises a plurality of light emitting diodes 18 arranged in an integral support structure 19 in an orthogonal matrix of rows and columns.
  • the matrix comprises five light emitting diodes in each row and seven light emitting diodes in each column, for a total of 35 light emitting diodes 21, comprising the array.
  • Contacts B1437 are provided making contact with the anodes of each of the rows of the light emitting diodes and contacts C1-C5 are provided for contacting the cathodes of the light emitting diodes in each column.
  • a suitable strobing or scanning type logic can individually address the light emitting diodes to cause each to emit light in a suitable alpha numeric, or graphic display, pattern.
  • the pattern indicated by the aura around various of the light emitting diodes being depicted as indicating the numeral 4.
  • Each column is addressed during a particular clock pulse of the logic and suitable of the light emitting diodes will be switched to emit light by addressing the desired anode through the row contacts.
  • the crossing conductive paths comprising the column contacts C1-C5 and row contacts Bl-B7 will be explained hereinafter in greater detail.
  • the integral support structure 19 includes a transparent faceplate 20 to the backside of which is secured columns of common cathode light emitting diodes 21 to 25, by means of a transparent bonding layer 26.
  • the anodes 27 (FIG. 3) of each of the diodes are regularly spaced within each column 21 to 25 (FIG. 2).
  • the anodes of each row 81-87 are connected together by a metallization layer 28 extending across all of the columns intermediate the columns and the transparent faceplate 20.
  • Each of the columns 21 to 25 is connected to contacts Cl-CS by leads 29, and each of the row metallizations 28 is connected to the row contacts Bl-B7 by leads 30.
  • the entire array 19 is enclosed by a suitable housing 31 which includes a plurality of column contacting terminals 32 and a plurality of row contacting terminals 33.
  • Each of the row address lines 28 have annular openings 34 therein (which are filled by the adhesive transparent layer 26) to permit light from the junction of each of the light emitting diodes 18 to be emitting through the transparent faceplate 20.
  • FIGS. 4-9 The successive steps in the manufacture of the light emitting diode array is depicted in FIGS. 4-9, which method has for its purpose obtaining relative electric isolation between the individual diodes 18, while interconnecting them in columns and rows which are scannably addressable in a unitary structure, which may be readily packaged.
  • a substrate 40 of monocrystalline semiconductor material preferably N-type gallium arsenide phosphide, is provided with suitably spaced P-conductivity regions 41, thereby forming a plurality of PN junctions 42 defining light emitting diodes 18.
  • P-type regions are produced by suitable photolithographic techniques in which the P-regions are preferably formed by diffusion, although suitable epitaxial techniques might be utilized as well.
  • a suitably transparent dielectric layer 43 By utilization of a suitable photomasking technique, annular openings 44 are opened through the dielectric layer 43 over each of the P- regions 41, and a layer 45 of vapor deposited metal placed over the entire surface of the substrate. Row connectors 28 are then formed from the metallization layer 45 by etching away the metal between the rows. Preferably, simultaneously with the etching of the metal from between the row address lines 28, circular openings 46 are defined within the row address lines 28 to permit emission of lights from the junction 42 of the light emitting diodes 18.
  • annular contact 47 between the row address line 28 and the P- regions 41 with the generally circular openings 46 permitting emission of light from the junction 42 of the diodes through the dielectric layer 43 (FIGS. 5 and 6).
  • the transparent faceplate 20 having metallized contacts C1-C5 and Bl-B7 arranged about its periphery, is then secured to the surface of the substrate by a suitable transparent adhesive layer 26.
  • the adhesive layer 26 serves to fill the circular openings 46 in the row contact 28 and also the spacing between the row contacts. Since the matrix of diodes is now suitably secured in an integral or unitary structure with the faceplate 20, the substrate 40 may be partially removed to a lapline LL if it is desired to lower the voltage drop of the cathode regions of the diodes.
  • moats 48 are etched through the substrate to the dielectric layer 43 to divide the substrate into the plurality of common cathode column members 21-25.
  • the transparent faceplate with the metallized contact members Bl-B7 and Cl-CS when secured to the surface of the substrate 40, electrical contact between the row metallization 28 and the contacts Bl-B7 will be made. However, if it is desired, the metallization 28 may be exposed by suitable etching steps and contact lead members utilized to connect the row with its respective contact. Following division of the substrate into the plurality of columns, a suitable metallization layer 50 may be placed over the major surface of the columns to form electrical connection between the cathodes of the columns and the cathode contacts Cl-CS (FIG. 9), thereby eliminating the need for separate leads 29 and providing lower resistance connection to the individual cathodes. The integral structure 19 including faceplate 20 with the matrix of diodes 21 thereon may then be sealed into the housing 31 with the contacts 81-87 and Cl-C5 aligned with respective terminals 32 and 33 to make electrical contact therewith.
  • An integrated light display comprising a matrix of light emitting diodes in an integral structure which is scannable to produce an alpha numeric character display, said light emitting diodes being arranged in a plurality of rows and columns with a first electrode of each diode being connected by row address lines and the other electrode of each diode being connected by column address lines;
  • a transparent faceplate of dielectric material having a first group of metalized row contacts along one edge thereof and a second group of metalized column contacts along a second edge;
  • each column address line means for electrically connecting each column address line to a metalized column contact at the periphery of the faceplate
  • a housing having a first and second group of terminals secured therein;

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Led Devices (AREA)
  • Transforming Electric Information Into Light Information (AREA)
  • Led Device Packages (AREA)
US00209838A 1971-12-20 1971-12-20 Integrated light emitting diode display device with housing Expired - Lifetime US3800177A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US00209838A US3800177A (en) 1971-12-20 1971-12-20 Integrated light emitting diode display device with housing
JP12481672A JPS4870493A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1971-12-20 1972-12-14
DE2262412A DE2262412C3 (de) 1971-12-20 1972-12-20 Abtastbares und lichtemittierendes Diodenfeld und Verfahren zu dessen Herstellung
US411614A US3899826A (en) 1971-12-20 1973-11-01 Scannable light emitting diode array and method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00209838A US3800177A (en) 1971-12-20 1971-12-20 Integrated light emitting diode display device with housing

Publications (1)

Publication Number Publication Date
US3800177A true US3800177A (en) 1974-03-26

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Family Applications (1)

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US00209838A Expired - Lifetime US3800177A (en) 1971-12-20 1971-12-20 Integrated light emitting diode display device with housing

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US (1) US3800177A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS4870493A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2262412C3 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3889147A (en) * 1974-09-30 1975-06-10 Litton Systems Inc Light emitting diode module
DE2731717A1 (de) * 1976-08-05 1978-02-23 Litton Industries Inc Optische sichtanzeigeeinrichtung
US4394600A (en) * 1981-01-29 1983-07-19 Litton Systems, Inc. Light emitting diode matrix
FR2690775A1 (fr) * 1992-04-30 1993-11-05 Masson Jacques Dispositif d'affichage matriciel lumineux de dimensions réduites.
US20030164674A1 (en) * 2002-01-15 2003-09-04 Seiko Epson Corporation Sealing structure with barrier membrane for electronic element, display device, electronic apparatus, and fabrication method for electronic element
US20080078524A1 (en) * 2006-09-30 2008-04-03 Ruud Lighting, Inc. Modular LED Units
US20080080196A1 (en) * 2006-09-30 2008-04-03 Ruud Lighting, Inc. LED Floodlight Fixture
US20090086491A1 (en) * 2007-09-28 2009-04-02 Ruud Lighting, Inc. Aerodynamic LED Floodlight Fixture
US9028087B2 (en) 2006-09-30 2015-05-12 Cree, Inc. LED light fixture
US9243794B2 (en) 2006-09-30 2016-01-26 Cree, Inc. LED light fixture with fluid flow to and from the heat sink

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50104582U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1974-01-31 1975-08-28
JPS5193175A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1975-02-13 1976-08-16
JPS5267283U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1975-11-12 1977-05-18
JPS5499586A (en) * 1978-01-24 1979-08-06 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS5558584A (en) * 1978-10-24 1980-05-01 Sanyo Electric Co Ltd Manufacture of solid display device
JPS57117664U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1981-12-17 1982-07-21

Citations (6)

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Publication number Priority date Publication date Assignee Title
US3290539A (en) * 1963-09-16 1966-12-06 Rca Corp Planar p-nu junction light source with reflector means to collimate the emitted light
US3330982A (en) * 1964-08-14 1967-07-11 Sylvania Electric Prod Hermetically encased electroluminescent display device
US3501676A (en) * 1968-04-29 1970-03-17 Zenith Radio Corp Solid state matrix having an injection luminescent diode as the light source
US3558974A (en) * 1968-04-30 1971-01-26 Gen Electric Light-emitting diode array structure
US3631285A (en) * 1970-03-04 1971-12-28 Sanders Associates Inc Electroluminescent displays
US3641390A (en) * 1968-07-09 1972-02-08 Ise Electronics Corp Solid-state letter display device

Family Cites Families (1)

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Publication number Priority date Publication date Assignee Title
US3517258A (en) * 1966-10-31 1970-06-23 Ibm Solid state display device using light emitting diodes

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3290539A (en) * 1963-09-16 1966-12-06 Rca Corp Planar p-nu junction light source with reflector means to collimate the emitted light
US3330982A (en) * 1964-08-14 1967-07-11 Sylvania Electric Prod Hermetically encased electroluminescent display device
US3501676A (en) * 1968-04-29 1970-03-17 Zenith Radio Corp Solid state matrix having an injection luminescent diode as the light source
US3558974A (en) * 1968-04-30 1971-01-26 Gen Electric Light-emitting diode array structure
US3641390A (en) * 1968-07-09 1972-02-08 Ise Electronics Corp Solid-state letter display device
US3631285A (en) * 1970-03-04 1971-12-28 Sanders Associates Inc Electroluminescent displays

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2534608A1 (de) * 1974-09-30 1976-04-01 Litton Industries Inc Sichtanzeigeeinrichtung
US3889147A (en) * 1974-09-30 1975-06-10 Litton Systems Inc Light emitting diode module
DE2731717A1 (de) * 1976-08-05 1978-02-23 Litton Industries Inc Optische sichtanzeigeeinrichtung
US4394600A (en) * 1981-01-29 1983-07-19 Litton Systems, Inc. Light emitting diode matrix
FR2690775A1 (fr) * 1992-04-30 1993-11-05 Masson Jacques Dispositif d'affichage matriciel lumineux de dimensions réduites.
US7524228B2 (en) 2002-01-15 2009-04-28 Seiko Epson Corporation Sealing structure with barrier membrane for electronic element, display device, electronic apparatus, and fabrication method for electronic element
US20030164674A1 (en) * 2002-01-15 2003-09-04 Seiko Epson Corporation Sealing structure with barrier membrane for electronic element, display device, electronic apparatus, and fabrication method for electronic element
US7109653B2 (en) * 2002-01-15 2006-09-19 Seiko Epson Corporation Sealing structure with barrier membrane for electronic element, display device, electronic apparatus, and fabrication method for electronic element
US7928656B2 (en) 2002-01-15 2011-04-19 Seiko Epson Corporation Sealing structure with barrier membrane for electronic element, display device, electronic apparatus, and fabrication method for electronic element
US20090179566A1 (en) * 2002-01-15 2009-07-16 Seiko Epson Corporation Sealing structure with barrier membrane for electronic element, display device, electronic apparatus, and fabrication method for electronic element
US7686469B2 (en) 2006-09-30 2010-03-30 Ruud Lighting, Inc. LED lighting fixture
US8425071B2 (en) 2006-09-30 2013-04-23 Cree, Inc. LED lighting fixture
US20080080196A1 (en) * 2006-09-30 2008-04-03 Ruud Lighting, Inc. LED Floodlight Fixture
US20100149809A1 (en) * 2006-09-30 2010-06-17 Ruud Lighting, Inc. Led lighting fixture
US20080078524A1 (en) * 2006-09-30 2008-04-03 Ruud Lighting, Inc. Modular LED Units
US7952262B2 (en) 2006-09-30 2011-05-31 Ruud Lighting, Inc. Modular LED unit incorporating interconnected heat sinks configured to mount and hold adjacent LED modules
US8070306B2 (en) 2006-09-30 2011-12-06 Ruud Lighting, Inc. LED lighting fixture
US9541246B2 (en) 2006-09-30 2017-01-10 Cree, Inc. Aerodynamic LED light fixture
US9028087B2 (en) 2006-09-30 2015-05-12 Cree, Inc. LED light fixture
US9039223B2 (en) 2006-09-30 2015-05-26 Cree, Inc. LED lighting fixture
US9243794B2 (en) 2006-09-30 2016-01-26 Cree, Inc. LED light fixture with fluid flow to and from the heat sink
US9261270B2 (en) 2006-09-30 2016-02-16 Cree, Inc. LED lighting fixture
US9534775B2 (en) 2006-09-30 2017-01-03 Cree, Inc. LED light fixture
US20090086491A1 (en) * 2007-09-28 2009-04-02 Ruud Lighting, Inc. Aerodynamic LED Floodlight Fixture

Also Published As

Publication number Publication date
JPS4870493A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1973-09-25
DE2262412A1 (de) 1973-07-12
DE2262412B2 (de) 1974-10-31
DE2262412C3 (de) 1975-06-12

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