US3781084A - Reversible phase modulating element - Google Patents

Reversible phase modulating element Download PDF

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US3781084A
US3781084A US00206391A US3781084DA US3781084A US 3781084 A US3781084 A US 3781084A US 00206391 A US00206391 A US 00206391A US 3781084D A US3781084D A US 3781084DA US 3781084 A US3781084 A US 3781084A
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crystal plate
axis
ferroelectric crystal
irregular ferroelectric
planes
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US00206391A
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English (en)
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A Fukuhara
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Hitachi Ltd
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Hitachi Ltd
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Priority claimed from JP13068770A external-priority patent/JPS5028267B1/ja
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/05—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect with ferro-electric properties
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G11C13/042—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using information stored in the form of interference pattern
    • G11C13/044—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using information stored in the form of interference pattern using electro-optical elements

Definitions

  • a pattern generating device includes a plurality of biaxial birefringent irregular ferroelectric crystal elements, each crystal being cut such that mutually opposing planes are nonnal to any of the a-, band c-axis that a thickness between the planes is that of a halfwave plate, said crystal elements being arranged in the form of a matrix on an identical plane normal to incident light, a required information pattern being recorded on a photosensitive medium in a manner that elements corresponding to the information pattern are manipulated by a threshold voltage applied to the Z- planes of the respective elements so that a largecapacity information recording method can be carried out.
  • the present invention relates to a pattern generating device utilizing a special ferroelectric crystal, and a method of recording the generated pattern.
  • U.S. Pat. No. 3,559,185 discloses that a device comprising a combination of quarter-wave Z plate a Gd, M00.);, is abbreviated GMO, plate in which the thickness between the mutually opposing Z-planes corresponds to the thickness'of a quarter-wave plate and a quarter-wave plate, each being made of the single crystal of Gd, M00.,),, arranged between a polarizer and an analyzer to be used as a light shutter device, and the light shutter device is arranged in the form of a matrix in a two-dimensional space normal to incident light, thereby causing the respective element light shutter devices to generate predetermined patterns by light shutter action.
  • GMO quarter-wave Z plate
  • M00. quarter-wave plate
  • the light shutter device is arranged in the form of a matrix in a two-dimensional space normal to incident light, thereby causing the respective element light shutter devices to generate predetermined patterns by light shutter action.
  • the light incident on the quarterwave Gd, M plate is not normally incident but is incident at a slight inclination.
  • light should be irradiated upon the element light shutter device in a deflected manner and, hence, it is not always normally incident.
  • the optical path length of the permeating light varies due to the biaxial birefringent property of the employed ferroelectric substance Gd,( M00 so that the prior art device does not perfectly function as quarter-wave plate. Differences are accordingly produced in the ratio of intensities for switch-on and -off states of the particular light shutter.
  • Gd, M00 is a biazial and birefringent crystal. Refractive indexes the crystal axes d, b and mcdi rec ti ons,respectively,
  • I-le- Ne laser As calculated from them, in order to secure a ratio of, intensities for the switch-on and -off states of at least I 10'' as is necessary for practical use, the deviation in the direction of irradiation upon the quarterwave Gd, M00 plate should be made within 120 The degrees of angle scarcely differ for light in the visible region (4000A. 7,500A.), and double the value is never exceeded. Therefore, in order to strictly operate the light shutter device and the pattern generating device, the incident direction of the irradiated light upon the quarter-wave Gd, M00 plate should be restrained within at most I 20' with respect to the normal direction of the particular quarter wave Gd, M00 plate.
  • a pattern generating device constructed by, as described above, arranging the light shutter devices within an identical plane normal to the irradiated light in the form of a matrix, when it is intended to record the Fourier transformation image of a generated pattern at a focal position by means of a Fourier transform lens having a focal length -f, there is a direction in which diffracted light beams among light beams permeating a light shutter device corresponding to the generated pattern image intensify one another.
  • FIG. 3 is a counter map showing intensity distributions in the reconstructed light of a double-exposure hologram in the case of using a prior-art quarter-wave plate and before and after the inversion of polarization, the distributions of which depend on incident angles of irradiated light;
  • FIGS. 4a and 4b are model diagrams showing lattice states dependent on the senses of spontaneous polarization of Gd,( M00 unit lattices, respectively;
  • FIG. 5 is a diagram of the refractive-index curved surface of biaxial birefrigence of an irregular ferroelectric substance
  • FIG. 6a is a perspective view showing a method of using a Z-cut half-wave ferroelectric plate according to the present invention.
  • FIG. 6b is a perspective view showing a method of using a Y-cut half-wave ferroelectric plate according to the present invention.
  • FIG. 7a is a diagram showing a hologram recording apparatus which uses a pattern generating device embodying the present invention.
  • FIG. 7b is a diagram for explaining a method of reproducing a hologram which has been prepared by the hologram recording apparatus in FIG. 7a;
  • FIG. 8 is a diagram showing a method of forming a hologram with a pattern generating device of another embodiment of the present invention.
  • FIG. 9 is a diagram showing a method of preparing a hologram with a pattern generating device of still another embodiment of the present invention.
  • FIG. 10 is a diagram showing one aspect of manipulating the pattern generating device of the present invention.
  • an intensity distribution appears which has the maximum peak at the center and some peaks gradually decreasing with distances from the 'center in FIG. 1 character 1 represents the intensity of diffracted light,'d the distance between the centers of the light shutter devices, and A the wavelength of incident light
  • character 1 represents the intensity of diffracted light,'d the distance between the centers of the light shutter devices
  • A the wavelength of incident light
  • the photosensitivity of an image recording medium is such that the medium is saturated for excessively intense light, whereas it is insensitive to weak light.
  • the system of the above pattern generating device it is, accordingly, difficult to faithfully record and reproduce the generated pattern. It is, therefore,
  • Another object of the present invention is to provide a large-capacity recording method with the abovementioned pattern generating device.
  • the present invention uses a single crystal belonging to a special group among ferroelectric substances, such as Gd M and potassium dihydrogen phosphate hereinbelow abbreviated as KDP the ferroelectric substance being cut so that the mutually opposing planes of the crystal may be normal to any one of the a-, band c-axis, respectively, and that the thickness between the opposing planes may be one at which refractive indexes n and n for light of a wavelength A permeating through the particular crystal and having polarization planes parallel to the aand b-axes produce a difference of half-wavelength from each other.
  • ferroelectric substances such as Gd M and potassium dihydrogen phosphate hereinbelow abbreviated as KDP the ferroelectric substance being cut so that the mutually opposing planes of the crystal may be normal to any one of the a-, band c-axis, respectively, and that the thickness between the opposing planes may be one at which refractive indexes n and n for light of
  • a half-wave plate of the ferroelectric substance e.g., Gd, M009 cut as described above is arranged in such a manner that the cut plane thereof has the a-axis or b-axis within the plane and made parallel to the polarization plane of an incident linear polarization.
  • the phase change of half-wavelength of permeating light is manipulated by a voltage which is applied in the direction c-axis of the half-wave ferroelectric plate. Accordingly, if the phase change is recorded and detected by any method, an electric signal applied to the half-wave ferroelectric plate may be converted into a binary light signal.
  • a hologram in such a way that the respective element half- I wave ferroelectric plates are manipulated so as togenerate a predetermined pattern by applying the voltages, light having permeated through the plates is made an object beam, and that a separate reference beam is irradiated onto a' photosensitive medium in a manner superposed upon the object beam Embodiments .1 and 2 In this case, a reproduced image appears as a pattern of the phase changes.
  • the recording of an on" condition is effected by double exposure of the half-wave ferroelectric plates with their polarity the sense of spontaneous polarization left as it is, while the recording of an ofP' condition is effected by double exposure with the polarity inverted the sense of spontaneous polarization being changed by 180
  • the hologram is prepared with the crystal half-wave ferroelectric plate permeating light made the information light and reproduction is done therefrom, information light beams opposite in phase to each other are doubly and simultaneously reproduced from parts corresponding to the off state, and hence, the intensity is a cancelled low one.
  • a Y-cut plate a single-crystal plate in which two opposing parallel planes are cut normally to the a-axis or b-axis and a prior art quarter-waveplate, respectively.
  • 0 represents an angle defined between the normal of the cut plane and the incident light, while designates, as referred to above, the angle which the plane containing the incident'light ray and the normal of the cut plane defines with the a-axis or b-axis a
  • the direction of d) 45 has the narrowest allowable range of 6 of approximately 2.5 1n the directions of 0 and 180, the allowable ranges are wide.
  • the Y-cut plate is much more convenient than the Z-cut plate.
  • the allowable range of 0 is the narrowest at (b 0, and it may be taken up to 0 12.
  • the ferroelectric substances v have such a property that, upon applying thereto an electric field or a stress which exceeds a threshold value inherent to the substance (the electric field of the fixed value shall be termed a coercive electric field, while the stress of the fixed value, a coercive stress the sense of the electric polarization of the particular crystal is inverted or changed by 180 Moreover, simultaneously with the 180 inversion of' the polarization, a lattice deformation is generated which, as shown in FIGS. 4a and 4b, is equivalent to the replacement between the aand b-axes.
  • ferroelectric substances generating no deformation in the crystal lattice in dependence upon the positive and negative senses of the polarization shall be termed regular ferroelectric substances, while those generating the de' formation shall be termed irregular ferroelectric substances.
  • regular ferroelectric substances those generating the de' formation shall be termed irregular ferroelectric substances.
  • irregular ferroelectric substances The above-mentioned Gd; M000 and KDP belong to the irregular ferroelectric substances, while c represent crystal axes, while n n DESCRIPTION OF THE PREFERRED EMBODIMENTS Description will now be made of the embodiments of the present invention:
  • EMBODIMENT l Illustrated in FIGS. 7a and 7b is an embodiment in which a pattern generating device of the present invention is utilized for a hologram forming apparatus.
  • the pattern generating device FIG. 7a, the pattern generating device 700 is disposed between two lenses 73 and 74.
  • a hologram of a pattern generated by the generator device 700 is recorded by object light and reference light onto a hologram recording medium 76 which is arranged substantially at the focal position of the lens 74.
  • a hologram recording medium 76 which is arranged substantially at the focal position of the lens 74.
  • numerals 77 and 78 represent semi-transparent mirrors, while 79 is a lens of a focal distance f, as is arranged at a position of f +1 ⁇ , in front of the lens 73 of a focal distance f,).
  • the pattern generation is carried out by applying a threshold voltage a voltage required to invert spontaneous polarization by 180 of the respective Gd M00 crystal plates through the transparent electrodes on the Z-planes of said Gd; M0O,) crystal plates.
  • the threshold voltage may be in any form insofar as the voltage component in the direction of the caxis is equal to said threshold voltage.
  • the pattern generation may also be accomplished by irradiating an electron beam which establishes an electric field equal to the threshold voltage threshold electric field in 1 crystal plate with its polarization plane parallel to the z-axis or b-axis of the Gd M00 cyrstal plate, an effect equivalent to the replacement between the aand b-axis may be imparted to the Gd,( M000 crystal plate by applying the threshold voltage to the Z-planes.
  • the phase of a permeating linear-polarization 700 FIG. 7a) is constructed. Further, as shown in 6 light beam having a polarization plane parallel to the aor baxis is modulated.
  • the generated pattern recorded on the hologram medium 74 by means of the pattern generating apparatus comprising the Gd, M000, crystal plates of such construction and constructed as in FIG. 7a, is obtained as an image at the position in the pattem generating apparatus at the recording of the hologram in such a way that, as illustrated in FIG. 7b, coherent light is irradiated upon the hologram recording medium 76 in a direction opposite to that of the reference light beam for the preparation of the hologram.
  • an interferable-light beam generating source 1' having a Brewster angle window is employed, it is not necessary to arrange the polarization plate in front of or at the back of the mutually opposing end faces of the Gd, M00 crystal plate as is illustrated in FIG. 6a.
  • the Gd,( M00 crystal plate shown in FIG. 6b is cut such that the opposing end faces are normal to the b-axis or the a-axis and that the thickness between the end faces is equal to that of the half-wave plate.
  • electrodes 62 Provided on the mutually opposing Z-planes are electrodes 62, through which a voltage corresponding to the 180 inversion of the spontaneous polarization of the Gd M00 crystal plate is applied.
  • EMBODIMENT 2 There will be described an embodiment which is used as an original plate for recording a hologram.
  • a pluralityof Gd M00 cyrstal plates are arranged in the form of a matrix such that the light incoming and outgoing planes thereof are located on an identical plane nearly normal to incident light, each element being cut so that the thickness d between both the front and back end surfaces normal to the c-axis are defined by:
  • light from an interferable-light source is divided into two parts. One of the parts is transmitted through a lens 89 at the back of a semi-transparent mirror 87 arranged at an angle of 45 Further at the back of a pattern generating device 800 consisting of the Gd M00 crystal plates a reflector 810 is arranged.
  • the irradiation light beam is passed through the pattern generating device twice via a semitransparent mirr'or 811, a lens 83, the pattern generating device 800 constituted by the Gd, M004); crystal plates and the reflector 810. Thereafter, the beam is irradiated upon a hologram medium 86 by the semitransparent mirror 811, to focus an interferen'ce image with the reference light from the interferable-light source 85.
  • Both the foregoing embodiments l and 2 adopt the Fourier transform hologram recording system in order to enhance the recording density of the holograms.
  • this system in case the bit arrangement i.e., the bit arrangement
  • v arrangement of the Gd M00 crystal plates on the pattern generating device is at equal spacing and in the form of a matrix, the concentration of the intensity distribution in the diffracted light of the permeating light beam from the respective bits occurs on the hologram recording medium.
  • the pattern generator of the present invention may simultaneously have the function of the phase impartation. More specifically, first, the voltage of random distribution is applied and the exposure in once carried out. Next, the polarity is inverted only at the bits intended for the off state,
  • the random phase distribution to be first imparted be a previously made one associated with information patterns, so as not to become a regular arrangement (for example, being entirely in-phase, being in-phase at every second line, etc.) in either of the two exposures. It is an advantage that the intensity concentration may be thus avoided.
  • a convex lines 109, a semitransparent mirror 11] and a reflector 110 are arranged into a Twyman interferometer.
  • One of light beams from an interferable-light source 105 is caused to impinge upon the interferometer through the convex lines 109.
  • An image focusing lens 104 is so arranged as to focus a pattern generating image of the pattern generating device I01 onto a screen 106.
  • the optical path is previously adjusted so that the surface of the screen may become bright when a voltage applied to predetermined Gd bits of the pattern generating devices are of an arrange ment at regular intervals on said generating devices.
  • This induces a variety of objections in, for example, maldistribution of the generated information, the balance of the intensity with the reference light, and limitation on the appropriate exposure region of sensitive materials.
  • the phase distribution given by the random phase shifter is fixed and the generated patterns are changed in succession, the information light intensities on the hologram recording medium are changed.
  • the intensity concentration is weakened on the average in comparison with a case without using the fixed random phase shifter, objectionable patterns are present in the respective times of generated patterns. It is too troublesome that, in order to overcome such disadvantage, the fixed random phase shifter is replaced at each generated pattern.
  • description will be made of a method of recording large-capacity information in the embodiments l and 2, which method is improved in the above respect.
  • EMBODIMENT 4 The aspect of performance of this embodiment is illustrated in FIG. 7a, while a partial detailed view thereof is given in FIG. 10.
  • a light beam emanating from a laser light source 75 is divided into two parts by a beam splitter 77.
  • One of the divided light beams is made a thicker parallel light beam as information light by means of a beam expander 73. It passes through an information pattern generating device 71 having also the function of rendering the phases of the respective bits random said device 71 being hereinbelow termed the random phase shifter Thereafter, it is condensed by a Fourier transform lens 74 to a hologram forming-plate 76 which is arranged on the focal plane of the lens.
  • the other light beam separated by the beam splitter is used as a reference beam, and is reflected by a reflector 78. Thereafter, it impinges on the hologram recording medium 76 with an angle defined thereto, and interferes with the information light to form a hologram pattern including a predetermined information.
  • the random phase shifter 700 of embodiment 4 serves also as the information pattern generating device, and it is constructed as a pattern generating device lll shown in FIG. 10. More specifically, each Gd M00 crystal plate 111 is formed such that both the front and back principal planes are orthogonal to the c-axis that the thickness between both the principal planes is an odd multiple of the thickness of a half-wave plate for the wavelength of the ligh used for example 0.3;1. for the He-Nelaser light 0.6328 and that it has an area of 250 X 250 1.
  • Pattern generating device 111' is made.
  • Lead wires 1111 connected to the above-mentioned transparent electrodes of the respective Gd M00 crystal plates are connected to an electronic computer 1112 which stores therein N numerals of l or 0'? arranged in a random order.
  • Bits Gd; M009 crystal plates corresponding to an information pattern to'be generated in the information pattern generator and random phase shifter apparatus, are turned on" through the electronic computer. Subsequently, a voltage of 300 to 400 V is applied through the electronic computer to the Gd, M00 crystalplates which correspond to bits to be turned off. An image of the random phase is thereby .formed on the hologram sensitive plate 76.
  • the principal planes of the crystal plate of the above Gd M000 crystal plate utilize the Z-planes
  • the Y-planes planes cut normally to the aor baxis of the crystal may also be utilized.
  • the voltages should, of course, be applied through the mutually opposing Z-planes as in the foregoing.
  • the laser light source employed in the present embodiment utilizes laser light 0.6328u from a He-Ne gas discharge tube having a Brewster window, the emitted light is of P-polarization. It is, therefore, unnecessary to arrange a polarizer in front of the information pattern generating device. In general, however, in case where a source of interferable light not polarized is utilized, a polarizing plate should be disposed in front of the information pattern generating device.
  • each set of end faces of said crystal as oppose to each other being cut such that they are normal to any one of aband c-axis and that the thickness -d between both the end faces with respect to permeating light wavelength A and where P represents a positive integral multiple, and in which a voltage sufficient to invert spontaneous polarization of said crystal is applied in the direction of the which weakens an intensity distribution of diffracted 7 gent lights in the permeating direction.
  • a plurality of 6 (N) such crystal elements are arranged such that the crystal axis within the principal planes of the particular crystal element is orthogonal to the incident polarizalaser light, and the Fourier transform hologram is pre-' pared by the use of passing light.
  • the polarity of only the elements at the off bit positions is inverted, and a hologram pattern is exposed to light in a manner to be superposed on the hologram which has been exposed to light at the first step.
  • the function of the phase shifter is effective at either step in the form of being correlated with the information pattern. Therefore, duringhologram exposure the intensity concentration may be remarkably avoided in comparison with the prior art.
  • the image positions become dark as the result of interference.
  • the reconstructed image appears as the intensity of light in conformity with the on" and off pattern of the input information.
  • a reversible phase-modulating element comprismg:
  • an irregular ferroelectric crystal plate having a set of mutually opposing end planes, upon which light is directed, normal to one of the aand b-axis, and the thickness between said end planes is prescribed, with respect to the difference An in the refractive 0 and having their polarization planes respectively parallel to said aand b-axis within the crystal and to a positive integer p, by
  • a reversible phase-modulating element according plate is made of Gd; M00,);,. 7
  • a reversible phase-modulating element further comprising; polarizing means which is arranged in optical sequence before one end plane of one set of said mutually opposing end planes of said irregular ferroelectric crystal plate of said reversible phase- LII index between light beams having a wavelength
  • said irregular ferroelectric crystal modulating element, a polarization plane of said polarizing means being arranged in parallel to one of said aand b-axis of said end planes of said irregular ferroelectric crystal plate.
  • said irregular ferroelectric crystal plate is made of Gd, M000 5.
  • a pattern generating device comprising: a plurality of reversible phase-modulating elements each comprising an irregular ferroelectric crystal plate in which a set of mutually opposing end planes, upon which light is directed, is normal to one of the a-, band c-axis, and the thickness between said end planes is prescribed, with respect to a difference An in the refractive index between light beams having a wavelength A and having their polarization planes respectively parallel to said aand b-axis within the crystal and to a positive integer p, by()t)/(2'An)(P+ /),and
  • said irregular ferroelectric crystal plates which constitute the respective elements, being arranged on a plane normal to an incident linearly polarized beam so as to form a matrix among them, one of said aand b-axis on said mutually opposing end planes of said each crystal plate being arranged in parallel to a.polarization plane of said incident linearly polarized beam.
  • a pattern generating device comprising:
  • a plurality of reversible phase-modulating elements each comprising:
  • an irregular ferroelectric crystal plate in which a set of mutually opposing end planes, upon which the light is directed, is normal to one of the a-, b and c-axis, and the thickness between said end planes is prescribed, with respect to a difference An in the refractive index between light beams having a wavelength A and having their polarization planes respectively parallel to said aand b axis within the crystal and to a positive integer p, by
  • a reversible phase-modulating element comprising:
  • an irregular ferroelectric crystal plate in which a set of mutually opposing end planes is normal to one polarizing means which is arranged in optical sequence before the crystal plate and in opposition to one end plane of one set of mutually opposing end planes of said irregular ferroelectric crystal plate.
  • a polarization plane of said polarizing means being arranged in parallel to one of said aand b-axis of said end planes of said irregular ferroelectric crystal plate.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Holo Graphy (AREA)
US00206391A 1970-12-09 1971-12-09 Reversible phase modulating element Expired - Lifetime US3781084A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP10853070A JPS5529403B1 (de) 1970-12-09 1970-12-09
JP13068770A JPS5028267B1 (de) 1970-12-25 1970-12-25

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US (1) US3781084A (de)
DE (1) DE2161168C3 (de)
FR (1) FR2117968B1 (de)
GB (1) GB1376158A (de)
NL (1) NL170894C (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3858001A (en) * 1973-05-11 1974-12-31 Honeywell Inc Stereoscopic display system
WO2010151618A1 (en) * 2009-06-24 2010-12-29 Canon Kabushiki Kaisha Hologram, hologram data generation method, and exposure apparatus

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2249192B (en) * 1990-07-18 1994-10-12 Sony Magnescale Inc Hologram scales

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5335459B1 (de) * 1969-03-10 1978-09-27

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3858001A (en) * 1973-05-11 1974-12-31 Honeywell Inc Stereoscopic display system
WO2010151618A1 (en) * 2009-06-24 2010-12-29 Canon Kabushiki Kaisha Hologram, hologram data generation method, and exposure apparatus
US20100328742A1 (en) * 2009-06-24 2010-12-30 Canon Kabushiki Kaisha Hologram, hologram data generation method, and exposure apparatus
JP2012532338A (ja) * 2009-06-24 2012-12-13 キヤノン株式会社 ホログラム、ホログラムデータ生成方法及び露光装置
US8531747B2 (en) * 2009-06-24 2013-09-10 Canon Kabushiki Kaisha Hologram, hologram data generation method, and exposure apparatus
TWI475340B (zh) * 2009-06-24 2015-03-01 Canon Kk 全像，全像資料產生方法，及曝光設備

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NL170894C (nl) 1983-01-03
NL170894B (nl) 1982-08-02
FR2117968B1 (de) 1976-07-09
DE2161168A1 (de) 1972-07-27
DE2161168C3 (de) 1979-12-20
FR2117968A1 (de) 1972-07-28
NL7116828A (de) 1972-06-13
GB1376158A (en) 1974-12-04
DE2161168B2 (de) 1979-04-26

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