US3676693A - Method for the production of an ion beam having a large cross-sectional area - Google Patents

Method for the production of an ion beam having a large cross-sectional area Download PDF

Info

Publication number
US3676693A
US3676693A US47389A US3676693DA US3676693A US 3676693 A US3676693 A US 3676693A US 47389 A US47389 A US 47389A US 3676693D A US3676693D A US 3676693DA US 3676693 A US3676693 A US 3676693A
Authority
US
United States
Prior art keywords
ion beam
parallel
incident
ion
double
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US47389A
Other languages
English (en)
Inventor
Georges Guernet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Application granted granted Critical
Publication of US3676693A publication Critical patent/US3676693A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/08—Deviation, concentration or focusing of the beam by electric or magnetic means
    • G21K1/087—Deviation, concentration or focusing of the beam by electric or magnetic means by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns

Definitions

  • substantially parallel ion beam having a large cross-sectional area
  • a first double deflection of a parallel incident-ion pencil is carried out in a same plane X and a second double deflection is carried out in a perpendicular plane Y by means of at least two alternating fields having different periods, said fields being parallel to said planes X and Y and perpendicular to the direction of the incident-ion beam.
  • the invention proposes a method of production of a substantially parallel ion beam having a large cross-sectional area, wherein a first double deflection of a parallel incident-ion pencil is carried out in a same plane X and a second double deflection is carried out in a perpendicular plane Y by means of at least two alternating fields having different periods which are parallel to said planes X and Y and perpendicular to the direction of the incident-ion pencil.
  • At least one of the said two double deflections contained in perpendicular planes is carried out by means of two alternating electric fields having the same period which are separated from each other by a nondeviating zone having instantaneously the same intensity and opposite directions, said period being very great with respect to the transit time during which an ion undergoes said double deflection.
  • At least one of the said two double deflections contained in the perpendicular planes is carried out by means of an alternating electric field having a period substantially equal to the transit time during which an ion undergoes said double deflection, the maximum radial distance r of an ion which has been subjected to a double deflection with respect to the center of said incident-ion pencil being given by the relation wherein V is the difference in maximum potential established between two parallel flat plates in oppositely-facing relation which are spaced at a distance d, wherein L is the length of said plates in the direction of said incident-ion pencil and wherein V is the voltage of acceleration of the ions in said direction.
  • the present invention is also directed to a device for carrying out said method.
  • Said device comprises an ion source which is capable of delivering a parallel ion pencil, two flat electrodes parallel to a plane X which are located in oppositely-facing relation and occupy symmetrical positions with respect to said incident-ion pencil, one electrode being brought to zero potential, two further flat electrodes perpendicular to said plane X which are located opposite to each other and occupy symmetrical positions with respect to said incident-ion pencil, one electrode being brought to zero potential, means for establishing a potential difference between two parallel electrodes in oppositely-facing relation.
  • FIGS. 1 and 2 represent the general diagram of two methods which make it possible to obtain a double deflection contained in a plane
  • FIG. 3 represents one advantageous mode of execution of the invention in which the two methods for obtaining a double deflection are employed in combination.
  • the double deflection is obtained from two identical pairs of electrically conducting parallel flat plates located on each side of the incident-ion pencil, said pairs being spaced at a distance b from each other over which the ions do not undergo a deviation (rectilineal path non-deviating zone).
  • Two diagonally opposite and therefore not oppositely-facing plates are connected to the zero potential and the two other plates are brought to an alternating-current potential.
  • the platepolarization voltage V is represented in FIG. 1.
  • the voltage oscillating time or period which is equal to usecs in this particular case is very great with respect to the time of transit 1- of the ions within said plates. The ionized particle therefore sees" virtually a direct-current voltage.
  • the double deflection contained in a same plane is obtained by means of a single pair of electrically conducting parallel plates located opposite to each other and on each side of the incident-ion pencil.
  • One of the plates is connected to the zero potential and the other is connected to the polarizing voltage V.
  • This alternating-current voltage has an oscillating time or period which is equal to the time of transit r of the ions within the interior of the plates.
  • the exit beam is radially homogeneous when the applied polarizing signal is symmetrical, that is to say when the rise time is equal to the fall time (for example a signal having the shape of a sine-wave or of an isosceles triangle).
  • the inventor has shown that, in a single system of plates, if a periodic polarizing signal is applied and the period T of said signal is equal to a whole number which is k times the transit time T of the particle within the system of plates, the value rm,r of the distance from one ion to the center of the incident-ion pencil is given by the relation ural mar)/( n wherein V is the ion acceleration voltage, L is the length of the plates along the axis of propagation of the ions, d is the distance between the plates and V is the maximum value of the polarizing voltage. It will be noted that, in order to have a minimum polarizing voltage V,,,,,,,, the period Tof the polarizing signal must be chosen equal to the transit time 1' (k 1).
  • a first double deflection in a plane X is carried out in accordance with the method described with reference to FIG. 1 and a second double deflection which can be carried out at the same time as the first is effected in a plane Y which is perpendicular to X in accordance with the method described with reference to FIG. 2.
  • an ion source 1 emits a parallel ion pencil 2 along an axis Z.
  • Two identical pairs of electrically conducting parallel flat plates 34 and 5-6 are disposed symmetrically on each side of the beam and said pairs are spaced so as to form a non-deviating zone in a plane parallel to said plates.
  • One pair of parallel flat plates 7 and 8 which are located in oppositelyfacing relation is disposed at right angles to the plates 3, 4, 5 and 6 and extends over the same portion of the axis Z as said plates 3, 4, 5 and 6.
  • the plates 4, 5 and 7 are connected to the zero potential and means (not shown) serve to polarize the plates 3, 6 and 8, the two first plates (namely the plates 3 and 6) being polarized in the same manner.
  • the voltage applied to the plate 8 is sinusoidal and has a period or oscillating time which is equal to I ,usec and the maximum value V of the voltage is 12 kV.
  • the voltage applied to the plates 3 and 6 is periodic and has an oscillating time equal to I00 ,usecs, the maximum voltage V,,,,,, is l2 kV and the polarizing signal over one-half period has the shape of an isosceles triangle.
  • the deflections of the beam can be carried out at X and at Y successively in two separate zones and not simultaneously in the same zone and the electrostatic deflections can be replaced by electromagnetic deflections.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Analytical Chemistry (AREA)
  • Combustion & Propulsion (AREA)
  • Particle Accelerators (AREA)
  • Electron Sources, Ion Sources (AREA)
US47389A 1969-06-26 1970-06-18 Method for the production of an ion beam having a large cross-sectional area Expired - Lifetime US3676693A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR6921490A FR2045238A5 (enrdf_load_stackoverflow) 1969-06-26 1969-06-26

Publications (1)

Publication Number Publication Date
US3676693A true US3676693A (en) 1972-07-11

Family

ID=9036427

Family Applications (1)

Application Number Title Priority Date Filing Date
US47389A Expired - Lifetime US3676693A (en) 1969-06-26 1970-06-18 Method for the production of an ion beam having a large cross-sectional area

Country Status (3)

Country Link
US (1) US3676693A (enrdf_load_stackoverflow)
FR (1) FR2045238A5 (enrdf_load_stackoverflow)
GB (1) GB1292199A (enrdf_load_stackoverflow)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3845312A (en) * 1972-07-13 1974-10-29 Texas Instruments Inc Particle accelerator producing a uniformly expanded particle beam of uniform cross-sectioned density
US4002912A (en) * 1975-12-30 1977-01-11 The United States Of America As Represented By The United States Energy Research And Development Administration Electrostatic lens to focus an ion beam to uniform density
EP0027628A1 (de) * 1979-10-17 1981-04-29 Siemens Aktiengesellschaft Verfahren zur gleichmässigen Ausleuchtung von Flächen mittels eines Strahles
DE3105359A1 (de) * 1980-02-22 1981-12-24 Varian Associates, Inc., 94303 Palo Alto, Calif. Ionenimplantationssystem, verfahren zur strahlablenkung zwecks gleichfoermiger bestrahlung, ablenksystem und verfahren zur erzeugung einer nichtlinearen wellenform
US4507559A (en) * 1982-07-22 1985-03-26 Siemens Aktiengesellschaft Deflection structure for a corpuscular beam blanking system and method for operating same
US4661712A (en) * 1985-05-28 1987-04-28 Varian Associates, Inc. Apparatus for scanning a high current ion beam with a constant angle of incidence
US4804852A (en) * 1987-01-29 1989-02-14 Eaton Corporation Treating work pieces with electro-magnetically scanned ion beams
US5126575A (en) * 1990-04-17 1992-06-30 Applied Materials, Inc. Method and apparatus for broad beam ion implantation
US5276330A (en) * 1991-05-29 1994-01-04 Etec Systems, Inc. High accuracy beam blanker

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2216714B (en) * 1988-03-11 1992-10-14 Ulvac Corp Ion implanter system

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3491236A (en) * 1967-09-28 1970-01-20 Gen Electric Electron beam fabrication of microelectronic circuit patterns
US3569757A (en) * 1968-10-04 1971-03-09 Houghes Aircraft Co Acceleration system for implanting ions in specimen

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3491236A (en) * 1967-09-28 1970-01-20 Gen Electric Electron beam fabrication of microelectronic circuit patterns
US3569757A (en) * 1968-10-04 1971-03-09 Houghes Aircraft Co Acceleration system for implanting ions in specimen

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3845312A (en) * 1972-07-13 1974-10-29 Texas Instruments Inc Particle accelerator producing a uniformly expanded particle beam of uniform cross-sectioned density
US4002912A (en) * 1975-12-30 1977-01-11 The United States Of America As Represented By The United States Energy Research And Development Administration Electrostatic lens to focus an ion beam to uniform density
EP0027628A1 (de) * 1979-10-17 1981-04-29 Siemens Aktiengesellschaft Verfahren zur gleichmässigen Ausleuchtung von Flächen mittels eines Strahles
DE3105359A1 (de) * 1980-02-22 1981-12-24 Varian Associates, Inc., 94303 Palo Alto, Calif. Ionenimplantationssystem, verfahren zur strahlablenkung zwecks gleichfoermiger bestrahlung, ablenksystem und verfahren zur erzeugung einer nichtlinearen wellenform
US4507559A (en) * 1982-07-22 1985-03-26 Siemens Aktiengesellschaft Deflection structure for a corpuscular beam blanking system and method for operating same
US4661712A (en) * 1985-05-28 1987-04-28 Varian Associates, Inc. Apparatus for scanning a high current ion beam with a constant angle of incidence
US4804852A (en) * 1987-01-29 1989-02-14 Eaton Corporation Treating work pieces with electro-magnetically scanned ion beams
US5126575A (en) * 1990-04-17 1992-06-30 Applied Materials, Inc. Method and apparatus for broad beam ion implantation
US5276330A (en) * 1991-05-29 1994-01-04 Etec Systems, Inc. High accuracy beam blanker

Also Published As

Publication number Publication date
GB1292199A (en) 1972-10-11
FR2045238A5 (enrdf_load_stackoverflow) 1971-02-26

Similar Documents

Publication Publication Date Title
Utterback et al. Fast molecular nitrogen beam
US5248883A (en) Ion traps of mono- or multi-planar geometry and planar ion trap devices
US5672879A (en) System and method for producing superimposed static and time-varying magnetic fields
US2570158A (en) Method and apparatus for separating charged particles of different mass-to-charge ratios
US3676693A (en) Method for the production of an ion beam having a large cross-sectional area
US3569757A (en) Acceleration system for implanting ions in specimen
US2808510A (en) Apparatus utilizing atomic or molecular beams
Iga et al. Formation of negative ions by electron impact on SiF4 and CF4
US2471935A (en) Method and apparatus for separating charged particles of different masses
US3197633A (en) Method and apparatus for separating ions of respectively different specific electric charges
US2909688A (en) Magnetic means for deflecting electron beams
Fournier et al. Status of the CO 2 laser ion source at CERN
US2659822A (en) Mass spectrometer
US3925662A (en) High-resolution focussing dipole mass spectrometer
US3689782A (en) Electronic transducer for a piezoelectric line
US3371205A (en) Multipole mass filter with a pulsed ionizing electron beam
US3040173A (en) Method for separating electrically charged particles
US3629573A (en) Monopole/quadrupole mass spectrometer
Feschenko Bunch shape monitors using low energy secondary electron emission
JPS6329786B2 (enrdf_load_stackoverflow)
US2794126A (en) Mass spectrometry
US3217161A (en) Electrode means to electrostatically focus ions separated by a mass spectrometer on a detector
US2806955A (en) Mass spectrometer
US3308293A (en) Method of selectively separating charged particles using a variable intensity non-uniform magnetic field
US12406823B2 (en) Electrode structure for guiding a charged particle beam