US3670214A - Voltage-dependent resistors - Google Patents

Voltage-dependent resistors Download PDF

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Publication number
US3670214A
US3670214A US5738A US3670214DA US3670214A US 3670214 A US3670214 A US 3670214A US 5738 A US5738 A US 5738A US 3670214D A US3670214D A US 3670214DA US 3670214 A US3670214 A US 3670214A
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United States
Prior art keywords
foil
voltage
resistors
grains
semiconductor
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Expired - Lifetime
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US5738A
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English (en)
Inventor
Siegfried Hendrik Hagen
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US Philips Corp
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US Philips Corp
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    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01F—PROCESSING OF HARVESTED PRODUCE; HAY OR STRAW PRESSES; DEVICES FOR STORING AGRICULTURAL OR HORTICULTURAL PRODUCE
    • A01F12/00—Parts or details of threshing apparatus
    • A01F12/30—Straw separators, i.e. straw walkers, for separating residual grain from the straw
    • A01F12/305—Straw separators, i.e. straw walkers, for separating residual grain from the straw combined with additional grain extracting means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof

Definitions

  • CT Voltage-dependent resistor comprising a foil of insulating [52] U.S. Cl. ..3l7/234 R, 317/234 S, 317/235 UA, material in which semiconductor grains are embedded, which 11 /2 338/228, 338/327, 338/ 2 project from the foil on both sides and are in contact with [51] Int. Cl. ..H0ll 9/00, H01] 9/06 electrode layers li to b Sides of the foil the grains [58] Field of Search ..317/234, 235; 338/223, 228,
  • the invention relates to voltage-dependent resistors consisting of elements of semiconductor material provided with two rectifying metal-semiconductor contacts (Schottky barriers) or with such a rectifying and an ohmic contact.
  • non-linear resistors are constructed as diodes. They are, however, employed in a region of operating voltage in which as a result of tunnel effect and/or avalanche efiect the barriers pass in the reverse direction a current increasing nonlinearly with voltage.
  • Resistors of this kind are known, for example, from the Austrian Pat. Specification No. 265,370.
  • Non-linear resistors are furthermore constructed from a plurality of active semiconductor elements known from U.S. Pat. No. 3210,83 l
  • These composite resistors are formed by a foil of insulating material in which grains of semiconductor material are included so that they project freely from both surfaces. The two surfaces of this foil are coated with metal contact layers which interconnect electrically projecting parts of grams.
  • Object of the invention is to provide voltage-dc pendent resistors having a strong non-linearity particularly suitable for use at low operational voltages, for example, lower than V.
  • the invention relates to a voltage-dependent resistor consisting of an uninterrupted foil of electrically insulating material in which semiconductor grains are included so that they freely project from both surfaces, said foil being coated on both surfaces with metal contact layers which electrically interconnect protruding parts of grains and is characterized in that the grains consist of a semiconductor 3-5 compound having an energy gap of more than 1.1 eV and have a size of 150 p. at the most and in that at least one of the contact layers with the protruding grain parts forms metal-semiconductor barriers.
  • resistors of this construction have a particularly great nonlinearity, operational voltages than mentioned in said Patent Specification.
  • the resistivity of the semiconductor grains may be adjusted in known manner by the addition of donors and acceptors.
  • the grain density of the foil and the size and composition of the grains this measure provides the possibility of adjusting the desired operational voltage of the resistors.
  • varions 3-5 compounds having an energy gap of more than 1.1 eV may be used such as GaAs, InP, AlSb, AlP, AlAs, it has been found that resistors having particularly advantageous properties, i.e., a high non-linearity at a low voltage are obtained on the basis of semiconductor grains of gallium phosphide as will be illustrated in the following example.
  • Foils including grains of semiconductor material in the form of a one-grain thick layer may be made, as is known, in various ways.
  • the grains may be spread on a substrate and subsequently embedded in a film of liquid synthetic resin or pressed into a synthetic resin foil, if necessary, whilst heated. Subsequently the grain surfaces are locally freed of the insulating synthetic I resin, for example, by grinding,
  • thermoplastic and thermo-hardening materials of good electrical insulation properties may be employed. It is, however, preferred to use polyesters and particularly polyurethanes which exhibit, apart from good mechanical and insulating properties, i a great preservability.
  • the contact layers may be applied by vapor-deposition, if desired, in an electric field (sputtering). It is known to use a plurality of metals, for example, gold, platinum, silver, copper and aluminum for the formation of metal-semiconductor barners.
  • the output of voltage-dependent resistors of good quality may be materially improved by some measures in the manufacture.
  • the resistance foil with one rectifying contact layer and one ohmic contact layer
  • FIG. 1 is a schematic view of an apparatus for carrying out the method of the invention
  • FIG. 2 is a cross-sectional view of a resistor of the invention.
  • FIG. 3 is a characteristic curve of a resistor of the invention.
  • Resistors according to the invention may be manufactured as follows.
  • the starting material is a powder of pure gallium phosphide with a zinc addition of 5 ppm so that the powder is p-conductive and has a resistivity of 0.3 Ohm.cm. at 20 C. A fraction of a granular size of 40 to 60 p. is sieved out.
  • a layer of a rubber glue is applied to a glass substrate and the grains of gallium phosphide are uniformly spread thereon. After drying at a slightly higher temperature the non-adhering grains are removed by means of a soft brush.
  • the substrate with the adhering grains is then dipped in a solution of polyurethane-forming compounds. After dripping ofl'the layer is dried in air and heated at 150 C. in an air stream for three-fourths hour for partial curing of the polyurethane.
  • the foil is then removed from the glass substrate and the glue layer present on one side is removed by rinsing in a mixture of xylene and petrol.
  • the foil is then carefully washed in order of succession with a soap solution, water and alcohol, after which it is dried.
  • the foil In order to free the grains also on the other surface the foil is etched for a few minutes with a 5 percent alcoholic KOl-l-solution. It is subsequently washed with alcohol and deionized water. After drying the foil is cured at 150 C. for l A hours.
  • the assembly is arranged in a metal bell 4, which is filled subsequent to evacuation, with argon to a pressure of about 0.1 mm Hg.
  • resistors formed by a foil portion of 8X8 mm an having circular contact layers of a diameter of 3 mm on both sides, are subjected to a current pulse of 200 mA.(about 1 second) between the contact layers.
  • the resultant resistors have the characteristic curve shown in FIG. 3. It is found that the non-linearity is very high in the voltage range between 3 and 5 V, the noise is low and in operation they exhibit substantially no fluctuation.
  • the present invention is not restricted to the given examples and that many variations may be carried out within the scope of the invention.
  • semiconductors having an energy gap of more than 1.12 V other than gallium phosphide may be used, and the foil may comprise a binder material other than polyurethane.
  • a voltage-dependent resistor consisting of a foil of electact layers forming metal-semiconductive barriers with said grains.

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  • Life Sciences & Earth Sciences (AREA)
  • Environmental Sciences (AREA)
  • Thermistors And Varistors (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
US5738A 1969-01-31 1970-01-26 Voltage-dependent resistors Expired - Lifetime US3670214A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6901538A NL6901538A (enrdf_load_stackoverflow) 1969-01-31 1969-01-31

Publications (1)

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US3670214A true US3670214A (en) 1972-06-13

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ID=19806021

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Application Number Title Priority Date Filing Date
US5738A Expired - Lifetime US3670214A (en) 1969-01-31 1970-01-26 Voltage-dependent resistors

Country Status (8)

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US (1) US3670214A (enrdf_load_stackoverflow)
BE (1) BE745185A (enrdf_load_stackoverflow)
BR (1) BR7016353D0 (enrdf_load_stackoverflow)
DE (1) DE2002404C3 (enrdf_load_stackoverflow)
FR (1) FR2029777A1 (enrdf_load_stackoverflow)
GB (1) GB1300142A (enrdf_load_stackoverflow)
NL (1) NL6901538A (enrdf_load_stackoverflow)
SE (1) SE347383B (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2445659A1 (de) * 1973-09-27 1975-04-03 Gen Electric Metalloxyd-varistor mit einer passivierenden beschichtung
US4255724A (en) * 1977-12-02 1981-03-10 Thomson-Csf Distortion-corrector for microwave tubes
US4300115A (en) * 1980-06-02 1981-11-10 The United States Of America As Represented By The Secretary Of The Army Multilayer via resistors
US5578765A (en) * 1992-09-18 1996-11-26 Incontrol Solutions, Inc. Transducer array

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4438187A1 (de) * 1994-10-26 1996-05-02 Abb Management Ag Elektrischer Leiter für Wicklungen mit verteiltem Überspannungsschutz
DE19608513A1 (de) * 1996-03-05 1997-09-11 Siemens Ag Chipkarte mit ESD-Schutz

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3210831A (en) * 1961-12-15 1965-10-12 Ass Elect Ind Method of making a non-linear resistance element
US3560812A (en) * 1968-07-05 1971-02-02 Gen Electric High selectively electromagnetic radiation detecting devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3210831A (en) * 1961-12-15 1965-10-12 Ass Elect Ind Method of making a non-linear resistance element
US3560812A (en) * 1968-07-05 1971-02-02 Gen Electric High selectively electromagnetic radiation detecting devices

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2445659A1 (de) * 1973-09-27 1975-04-03 Gen Electric Metalloxyd-varistor mit einer passivierenden beschichtung
US4255724A (en) * 1977-12-02 1981-03-10 Thomson-Csf Distortion-corrector for microwave tubes
US4300115A (en) * 1980-06-02 1981-11-10 The United States Of America As Represented By The Secretary Of The Army Multilayer via resistors
US5578765A (en) * 1992-09-18 1996-11-26 Incontrol Solutions, Inc. Transducer array
US5583303A (en) * 1992-09-18 1996-12-10 Incontrol Solutions, Inc. Transducer array

Also Published As

Publication number Publication date
NL6901538A (enrdf_load_stackoverflow) 1970-08-04
DE2002404A1 (de) 1970-09-03
FR2029777A1 (enrdf_load_stackoverflow) 1970-10-23
GB1300142A (en) 1972-12-20
BE745185A (fr) 1970-07-29
SE347383B (enrdf_load_stackoverflow) 1972-07-31
BR7016353D0 (pt) 1973-02-20
DE2002404B2 (de) 1977-12-15
DE2002404C3 (de) 1978-08-17

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