US3668441A - Method of generation of spontaneous elastic-spin-oscillations in ferromagnetopiezosemiconductor circuits - Google Patents

Method of generation of spontaneous elastic-spin-oscillations in ferromagnetopiezosemiconductor circuits Download PDF

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Publication number
US3668441A
US3668441A US97499A US3668441DA US3668441A US 3668441 A US3668441 A US 3668441A US 97499 A US97499 A US 97499A US 3668441D A US3668441D A US 3668441DA US 3668441 A US3668441 A US 3668441A
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oscillations
elastic
spin
slab
circuit
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US97499A
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Sylwester Kaliski
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction

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  • ABSTRACT A method of generating spontaneous elastic-spin-oscillations in ferromagneto-piezosemiconductor circuits, including a slab of ferromagnetic crystal and a semiconductor layer on said slab, comprises applying a dc.
  • the invention relates to a method of generation of spontaneous elastic-spin-oscillations in ferro-magnetopiezosemiconductor circuits.
  • This method is limited to lateral and longitudinal oscillations.
  • the compliance with Sommerfeld boundary conditions in the case of propagation of a surfacial wave consists in that the normal stresses and the tangential displacements in the crystal on its boundary surface are simultaneously equal to zero, or inversely, i.e., the tangential stresses and normal displacements on the boundary surface of the crystal are equal to zero.
  • the length of the crystal is assumed to be a multiple of the half-wave propagating in the crystal.
  • the width of the crystal is preferably assumed as being equal to from several to wavelengths. The thickness of the crystal, ensuring a propagation not disturbed by itself, must be greater than the wavelength, as the surfacial wave declines at the depth of a magnitude order of the wavelength.
  • An object of the invention is to produce multiplied elasticspin-oscillations with frequencies having a range of hundreds to thousands MI-Iz due to the utilization of the effect of critical velocity of electron drift and the inner mechanism of elasticspin coupling in ferromagnetic crystals.
  • the invention provides in a ferromagneto-semiconductor circuit comprising a ferromagnetic crystal and a layer of piezosemiconductor layer, that dc. voltage be applied through ohmic contacts to the semiconductor layer, which generates a current of electrons drifting in the layer.
  • the elastic-spin coupling that produces spin oscillations is the highest in conditions of spin-acoustic resonance, which is achieved by placing the crystal in a constant magnetic field having a value determined by the parameters of the circuit.
  • a ferromagneto-semiconductor monolithic crystal in which the electron mobility has a value which enables the critical velocity to be achieved. Since crystals of such type with sufficient mobility are not available, the circuit can be implemented by a superposition one upon another of ferromagnetic and semiconductor crystal layers with a slab thickness smaller than the required wave length. The principle of operation of the circuit is analogous to the circuit for the surface oscillations.
  • FIG. 1 shows an example of an embodiment of the circuit comprising a slab of iron-yttrium garnet and a sub-surface semiconductor layer of cadmium sulfide for achieving spontaneous surface oscillations, and
  • FIG. 2 shows an example of an embodiment of the circuit consisting of alternately superposed layers of iron-yttrium garnet and cadium sulfide for obtaining transverse oscillations.
  • the elastic-spin surface oscillations arising under the influence of thermal fluctuations in a slab l of FIG. I generate in a semiconducting layer 2 elastic oscillations which generate a piezoelectric field that modulates the current of drifting electrons in the layer 2, generated by dc. voltage from source 4 applied to this layer through ohmic contacts 3.
  • Slab 1 illustratively is iron-yttrium garnet while layer 2 is, illustratively cadmium sulfide.
  • FIG. 2 shows the dc. voltage from source 4 applied through ohmic contacts 3 to the lateral surfaces of a multi-layer circuit.
  • the oscillations at the required frequency can be obtained by securing the full reflection from the boundary borders by fulfilling the Sommerfeld boundary conditions in case of surface oscillations, and in the case of transverse oscillations by securing the full reflection from the surfaces vertical to the direction of the propagation of elastic-spin waves.
  • the semiconductor layer can be superposed upon the slab either mechanically or epitaxially.
  • a method of generation of spontaneous elastic-spin oscillations in ferromagneto-piezosemiconductor circuits comprising a slab of a ferromagnetic crystal and a semiconductor layer on said slab, which method comprises applying a dc voltage through ohmic contacts to the semiconductor layer to produce surface oscillations, said surface oscillations inducing in the semiconductor layer a current of drifting electrons, modulating said current of drifting electrons by a piezoelectric field induced by elastic oscillations in the layer caused by the surface oscillations in said ferromagnetic crystal, amplifying the elastic oscillations in the semiconductor layer by said current when said drifting electrons are at a critical drift velocity, amplifying the elastic oscillations in the ferromagnetic crystal when said elastic oscillations in said semiconductor are amplified, said circuit being in the state of spin-acoustic resonance by placing the circuit in a constant magnetic field having a value determined by the circuit parameters, and producing a multiplication of spin oscillations through elastiction
  • a method according to claim 1 wherein said slab is ironyttrium garnet and said semiconductor layer is cadmium sul- 4.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Hall/Mr Elements (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Measurement Of Mechanical Vibrations Or Ultrasonic Waves (AREA)
  • Pressure Sensors (AREA)
US97499A 1969-12-13 1970-12-14 Method of generation of spontaneous elastic-spin-oscillations in ferromagnetopiezosemiconductor circuits Expired - Lifetime US3668441A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL137535A PL63517B1 (enrdf_load_stackoverflow) 1969-12-13

Publications (1)

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US3668441A true US3668441A (en) 1972-06-06

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US97499A Expired - Lifetime US3668441A (en) 1969-12-13 1970-12-14 Method of generation of spontaneous elastic-spin-oscillations in ferromagnetopiezosemiconductor circuits

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US (1) US3668441A (enrdf_load_stackoverflow)
JP (1) JPS4825821B1 (enrdf_load_stackoverflow)
FR (1) FR2116325B1 (enrdf_load_stackoverflow)
GB (1) GB1328649A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070007389A1 (en) * 2004-05-17 2007-01-11 The Boeing Company Mobile transporter servicing unit for an operational ground support system
CN107478320A (zh) * 2017-08-23 2017-12-15 京东方科技集团股份有限公司 晶体管声传感元件及其制备方法、声传感器和便携设备

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59107769U (ja) * 1983-01-11 1984-07-20 シ−アイ化成株式会社 差込ケ−ス

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3173100A (en) * 1961-04-26 1965-03-09 Bell Telephone Labor Inc Ultrasonic wave amplifier
US3274406A (en) * 1963-01-31 1966-09-20 Rca Corp Acoustic-electromagnetic device
US3290610A (en) * 1966-02-21 1966-12-06 Bell Telephone Labor Inc Elastic traveling wave parametric amplifier
US3353118A (en) * 1964-05-19 1967-11-14 Teledyne Inc Magnetostatic wave variable delay apparatus
US3422371A (en) * 1967-07-24 1969-01-14 Sanders Associates Inc Thin film piezoelectric oscillator

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3173100A (en) * 1961-04-26 1965-03-09 Bell Telephone Labor Inc Ultrasonic wave amplifier
US3274406A (en) * 1963-01-31 1966-09-20 Rca Corp Acoustic-electromagnetic device
US3353118A (en) * 1964-05-19 1967-11-14 Teledyne Inc Magnetostatic wave variable delay apparatus
US3290610A (en) * 1966-02-21 1966-12-06 Bell Telephone Labor Inc Elastic traveling wave parametric amplifier
US3422371A (en) * 1967-07-24 1969-01-14 Sanders Associates Inc Thin film piezoelectric oscillator

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Stern, Microsound Components, Circuits, and Applications, Ultrasonics, October, 1969, 227 233. *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070007389A1 (en) * 2004-05-17 2007-01-11 The Boeing Company Mobile transporter servicing unit for an operational ground support system
CN107478320A (zh) * 2017-08-23 2017-12-15 京东方科技集团股份有限公司 晶体管声传感元件及其制备方法、声传感器和便携设备

Also Published As

Publication number Publication date
FR2116325A1 (enrdf_load_stackoverflow) 1972-07-13
FR2116325B1 (enrdf_load_stackoverflow) 1973-12-07
JPS4825821B1 (enrdf_load_stackoverflow) 1973-08-01
GB1328649A (en) 1973-08-30
DE2061159A1 (de) 1971-06-16
DE2061159B2 (de) 1976-07-22

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PL63517B1 (enrdf_load_stackoverflow)