US3661636A - Process for forming uniform and smooth surfaces - Google Patents

Process for forming uniform and smooth surfaces Download PDF

Info

Publication number
US3661636A
US3661636A US30789A US3661636DA US3661636A US 3661636 A US3661636 A US 3661636A US 30789 A US30789 A US 30789A US 3661636D A US3661636D A US 3661636DA US 3661636 A US3661636 A US 3661636A
Authority
US
United States
Prior art keywords
deposition
growth
substrate
deposited
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US30789A
Other languages
English (en)
Inventor
James M Green
Thomas O Sedgwick
Victor J Silvestri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of US3661636A publication Critical patent/US3661636A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/026—Deposition thru hole in mask
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/05—Etch and refill
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/115—Orientation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions

Definitions

  • ABSTRACT 0' [u] Fllcd' Apr' 1970
  • a method for forming uniform and smooth surfaces which can I 21 I A l. No.1 30,789 be used in any chemical vapor transport system and in general in any deposition system in which chemicals in a gas phase are reacted to cause deposition onto a substrate.
  • substrate temperature and the conl o c centrations of input reactants ridge growth and defect growth in deposited films are substantially reduced.
  • FIG. 1 l 1 1 l l SUBSTRATE TEMPERATURE (Cl Patented May 9, 1972 FIG. 1
  • CVD techniques are widely used. These processes enable the deposition of one single crystal layer upon another. In this manner, multilayer single crystal devices can be fabricated.
  • CVD processes are widely used in the fabrication of many semiconductor devices, it is a common problem that the use of such processes frequently leads to surfaces which are less uniform in thickness and less smooth than those upon which the deposition occurred. Because subsequent semiconductor fabrication steps such as photomasking and photolithography require smooth surfaces, prior epitaxial deposition techniques have not been entirely satisfactory.
  • the reaction conditions for CVD processes can be considered to involve two regions of growth.
  • One region is such that the growth of the deposited layer is mass transport limited. This means that the growth rate of the depositing atoms depends upon only the amount of material reaching the substrate surface per unit time, by any mechanism whatsoever. in this region, growth is temperature insensitive.
  • Another region of deposition is that where the growth is surface rate limited. In this region, the growth rate of the deposited layer does not depend upon the amount of material reaching the surface per unit time, but instead depends upon surface conditions. That is, there is some slow step in the mechanism by which depositing atoms adhere to or react on the substrate surface that determines the rate of growth of atoms on the substrate.
  • the first problem area is ridge growth around non-nucleating materials on the substrate surface.
  • Semiconductor processes require the use of many materials in addition to the semiconducting materials themselves. For instance, plastics, tefion compositions, ceramics, nitrides, oxides, carbon, and carbides are some of the more frequently used materials. However, some of these, and others (depending on the semiconductor deposition process and operating conditions), are nonnucleating. That is, semiconductor atoms being deposited will not adhere to these materials. Since growth of a new layer will not occur on a non-nucleating surface, the depositing atoms migrate to the surrounding semiconductor surface where they will deposit. This deposition increases the local deposit and leads to the build-up of a ridge around the non-nucleating area, thereby causing a surface irregularity.
  • a particular example involving ridge formation is that which occurs in epitaxial deposition when a pedestal-type structure is to be backfilled.
  • an oxide mask which is non-nucleating, protects the semiconductor pedestal while a semiconductor material is deposited around the pedestal. What occurs is an increased growth at the edge of the oxide mask, and a ridge is thereby created.
  • the ridge is a surface irregularity which interferes with further device fabrication steps.
  • non-nucleating materials give rise to the formation of a ridge
  • deposition is to be through a patterned mask.
  • enhanced growth of depositing atoms occurs at the boundary of the mask pattern. Again, this creates a surface irregularity which hinders further device fabrication.
  • Another problem mentioned above is that which relates to the enhanced growth of an existing small defect on a surface which is to serve as a substrate for epitaxial deposition.
  • a defect may be caused by a number of mechanisms, such as vapor-liquid-solid growth in conjunction with an impurity particle.
  • the initial defect is small enough, and if the deposition of additive layers maintains the integrity of the substrate smoothness by not increasing the size of the defect, device fabrication is possible.
  • deposition of layers causes the defects to grow at a rate faster than the rest of the deposited layer, with the result that large spike-like protrusions are formed.
  • These protrusions severely inhibit further processing. For instance, it is difficult to use a mask on such a surface, as the protrusions will damage the mask and will cause mask alignment problems.
  • Prior art techniques to avoid or eliminate the formation of defect protrusions involve two approaches.
  • the first is a purely mechanical one in which the protrusions are intentionally broken, as maybe done by pressing and/or rotating a flat surface against the wafer.
  • this approach has disadvantages in that there is a high risk of damage to the wafer when protrusions are mechanically removed.
  • mechanically removing the protrusions is an extra process step.
  • the second technique to eliminate the problem of enhanced defect growth is a preventative one in which ultra-clean laboratory conditions are used to eliminate the source of the initial growth of small defects on the substrate.
  • ultra-clean laboratory conditions are used to eliminate the source of the initial growth of small defects on the substrate.
  • 100 percent efficiency is never achieved and defects do occur.
  • Subsequent deposition causes enhanced growth of these defects, and they have to be removed mechanically, as explained previously.
  • the third problem mentioned above is that which concerns contour epitaxy.
  • the layer to be deposited should conform to the topology (i.e., contour) of the substrate surface. lf the substrate surface is uneven (for instance, if it contains grooves) it is desirable that the deposited layer follow the contour of the substrate and have a uniform thickness across the total substrate area.
  • the deposited epitaxial layer is of varying thickness, so that surface irregularities develop.
  • the prior art has not been able to adequately provide contoured epitaxial surfaces which follow the topology of the underlying substrate.
  • Still another object of this invention is to provide a deposition process which will eliminate both ridge growth and enhanced defect growth while maintaining smooth semiconductor surfaces.
  • a further object of this invention is to provide an epitaxial deposition process suitable for maintaining the topology of an initial surface during contour epitaxy deposition.
  • the method can be applied to any chemical vapor transport system, to glow discharge reaction systems (in which gaseous reactants are ionized by electrical energy to form deposits on the substrate),'and to plasma anodization systems (in which one of the reactants is located within the film to be anodized and the others are in the gas phase).
  • the method applies to these processes and to any process in which chemicals must be brought to a substrate in a gas phase, for reaction in the vicinity of the substrate.
  • the materials to be deposited can be metals or semiconductors, including single elements,
  • the input chemicals will probably include several gaseous species, which may contain either gallium or arsenic, in a manner well known tothose of skill in this art.
  • the substrates can be the same material as the film deposits, or different materials, and the deposits may be epitaxial.
  • the method defines a zone of epitaxial deposition between surface rate limited conditions and mass transport limited conditions. Epitaxial deposition within this zone provides smooth (non-faceted) surfaces and defectless growth. Here, growing deposits have no defects and ridges are not formed around non-nucleating surfaces. Generally, this means that all surface irregularities are below 0.1 micron.
  • the present invention teaches that there is a zone of operating conditions which will provide both defect-free growth and non-faceted surfaces even though the process may be operated in the surface rate limited region, or near that region.
  • the ratio of the concentration of the input reactants containing the materials to be deposited to the concentration of the carrier gas is first chosen to place the deposition in the mass transport limited region of operation. This will provide non-structured surfaces, although defects (including ridges) may be present. The concentrations of these input reactants and the carrier gas are then changed so that the ratio of these concentrations is increased. This change in ratio continues until structured (faceted) surfaces are obtained.
  • germanium is to be deposited from input reactant GeCl and hydrogen is the carrier gas
  • the GeCh/H ratio for simplicity indicated as GelH is changed until the film being deposited exhibits oriented growth facets characteristic of the orientations of the substrate.
  • the concentration ratio is slowly changed in a reverse direction until surface facets disappear and the surface is tolerable for further device processing.
  • defectless growth and nonfaceted surfaces will be obtained.
  • the final operating point may be in the surface rate limited region of growth, but sufficiently smooth surfaces will be provided without ridge growth and without enhanced defect growth.
  • the initial operating point can be such as to place deposition in the surface rate limited region.
  • the deposited material will have facets thereon, but will contain no defects or ridges. Maintaining the temperature constant, the concentration ratio is then changed in a direction which will yield deposits having non'faceted surfaces. However, defects and ridges will begin to develop when the concentration ratio is changed in this direction. The change in ratio is stopped when the defects and ridges begin to occur. At this point, the concentration ratio is changed in a reverse direction until the defects and ridges disappear.
  • a final operating'point of temperature and concentration ratio will be obtained at which the deposited surface is non-faceted, and does not obtain ridges or defects greater than 0.1 micron.
  • the defect and ridge growth will have disappeared at this point. Then, the temperature is slowly changed in a reverse direction until the facets disappear. It will be found that, at this final temperature and concentration ratio, the surfaces of the deposited material will be free from facets, defects, and ridges.
  • the initial operating conditions can be such as to place the initial deposition in the surface rate limited region. This will mean that faceted surfaces having no defects or ridges will be obtained.
  • the substrate temperature is changed in a reverse direction until the deposited surfaces exhibit no defects or ridges. It will be found that such surfaces are free of facets, defects, and ridges at this final temperature and fixed concentration ratio.
  • the method of this invention depends upon the discovery that a region of operation surrounding the transition between mass transport limited growth and surface rate limited growth exists in which deposited surfaces are smooth, and defects and ridges are eliminated.
  • This region of desired operation can extend far into the surface rate limited region of growth and, with good substrate cleaning processes, may be unlimited in the direction of surface rate limited growth.
  • ultra-smooth surfaces are not required.
  • FIG. I is a schematic diagram illustrating the concept of ridge growth around a non-nucleating material.
  • FIG. 2 is a schematic diagram illustrating enhanced defect growth ofa large dome-like defect.
  • FIG. 3 is a plot of growth rate versus substrate temperature for a germanium epitaxial system.
  • F IG. 4 is a plot of growth rate versus substrate temperature for a silicon epitaxial system.
  • a substrate 14 of a semiconductor (such as germanium) has an epitaxial layer 16 of Ge thereon.
  • Epitaxial layer 16 is formed into a pedestal structure 10, on which is located a masking layer 12 of silicon dioxide (SiO Surrounding pedestal is another Ge layer 18, which could be an epitaxial layer also.
  • SiO is a non-nucleating material for depositing germanium atoms
  • these atoms will not adhere to the SiO mask 12 and will move to the edge ofthe mask where they will be deposited.
  • the increased concentration at the boundary of the non-nucleating material causes a ridge 20 to be formed at the edge of the SiO
  • the deposition becomes more planar.
  • the ridges can be quite high (greater than 1 micron) and their presence will seriously interfere with further device processing.
  • FIG. 2 there is illustrated a large dome defect which is many times the height of the epitaxial layer 32.
  • Such defects are relatively common on epitaxially deposited germanium and silicon layers. These defect protrusions greatly hinder subsequent device fabrication procedures-especially that of masking.
  • These dome-shaped defects may extend to a height of some 20 times the epitaxial layer thickness and are characterized by geodesic faceting.
  • the rate controlling step of the chemical reaction is generally considered to be that of diffusion of the reactants through the gas phase to the reaction site (i.e., the rate of epitaxial growth is diffusion limited). Since the apex of the spike is accessible to reactants diffusing from all directions, whereas other regions of the wafer surface effectively receive material only from the volume directly above these regions, more reactant species are attracted to the spikes per unit time than to the surrounding wafer surface.
  • a concentration gradient of the reactant species extends normally to the substrate. Consequently, the apex of the spike is in a region of higher reactant concentration than either the base of the spike or the balance of the wafer surface. Therefore, the chemical reaction for epitaxial deposition proceeds more rapidly at the apex, and large dome-like defects result.
  • a good surface is defined as that which enables further processing without any compensation (i.e., cleansing of the surface, etc).
  • a ridge or a defect having a height as small as 0.5 micron is harmful to further device processing.
  • the harmful effects of the defects depend on the size of the components and the resolution of these components. For some devices, larger defects may be tolerable.
  • FIGS. 3 and 4 illustrate deposition of Ge by H reduction of GeCl and deposition of Si by I-I reduction of SiCl,, respectively.
  • FIG. 3 relates to a germanium deposition system
  • FIG. 4 relates to a silicon deposition system
  • the method of this invention is applicable to the deposition of gallium arsenide on germanium, and any other deposition systems.
  • the growth rate of deposited germanium is plotted as a function of substrate temperature for various input reactant concentration ratios (Ge/H).
  • the dashed line I which intersects each growth curve represents the crossover line between the surface rate limited region (A) and the mass transport limited region (B).
  • This dashed curve generally demarks conditions for obtaining smooth surfaces or structured surfaces.
  • smooth (non-faceted) surfaces are-obtained while in the surface rate limited region structured (faceted) surfaces are obtained and these facets are dependent on substrate crystallographic orientation. That is, in the surface rate limited region of operation, there is a growth rate dependence on the variations of substrate orientation and on substrate temperature, while in the mass transport limited region there is no growth rate dependence on surface orientation and temperature.
  • Film deposits are considered structured" when they exhibit growth figures (facets) characteristic of the particular substrate orientations. For instance, triangular facets develop on [111] surfaces, while square facets develop on [100] surfaces. These facets are easily seen by the observer during deposition. "Smooth" surfaces exhibit essentially a mirror finish and are free of these growth figures.
  • the dash-dot lines L1 and L2 on each side of curve L define a zone of deposition in which smooth surfaces can be obtained, while at the same time maintaining ridgeless growth with no enhanced defect growth.
  • this invention teaches that elimination of defect growth and ridge growth can occur while smooth surfaces are obtained if deposition is in accordance with selected process steps. That is, contrary to the teaching of the prior art which taught away from the present invention in order to reduce ridge growth, a detailed study of the growth mechanism of ridges and defects has surprisingly indicated that operation toward and into the surface rate limited region of deposition is the way to eliminate such spurious growth.
  • the temperature of the high purity GeCl is usually varied between 40 and 25 C. If a hydrogen dilution line is provided, hydrogen can be by-passed around the GeCl, source. In this way the input Ge/H ratio is varied by either changing the vapor pressure at the GeCl, source while keeping the total flow constant, or by adding pure H gas through the dilution line at a fixed GeCl, source temperature.
  • the substrate temperature is obtained by R.F. induction to a germanium pedestal which acts as the susceptor. Control of the substrate temperature is obtained by means of a temperature sensing device, in combination with the RF. induction system.
  • the concentration ratio (Ge/H is increased by varying the concentration of the input reactants GeCl, and H
  • the Ge/l-I ratio is increased until rough (faceted) surfaces are noted.
  • the concentration of the reactants is changed slowly to reduce the Ge/l-I, ratio until surface roughness disappears or is tolerable for the subsequent required device processing.
  • the smoothness of the deposited layer is essentially that which would occur if deposition were well within the mass transport limited region. That is, faceting can be eliminated without producing ridges or large defects.
  • the substrate temperature should be reduced to move the deposition toward the surface rate limited region.
  • the temperature is lowered until rough (faceted) surfaces are noted, at which time the temperature is slowly increased until the surface roughness disappears, or becomes tolerable.
  • the surface roughness of the deposited layer is essentially the same as that-obtained when operation is in the mass transport limited region, even though the final operating point may be to the left of dashed line L. Also, no ridges or large defects will result.
  • the process can start in the surface rate limited region, as previously explained in the summary. For instance, if temperature is held constant, the ratio is changed until defects appear, at which time it is slowly reversed until the defects disappear. This will determine the final operative point. Also, both temperature and concentration ratio can be changed simultaneously (or separately) to carry out the process. This may efi'ect more rapid determination of the final operating point.
  • FIG. 4 shows curves for the deposition of silicon by hydrogen reduction of SiCl Because most deposition is done at a SiCI /H concentration ratio (designated Si/H of 0.02, data for additional growth curves has not been extensively developed. Therefore, further growth curves are shown as solid lines where data has been well established and as dotted lines where the data is not well established. However, the dotted line extensions are believed to be quite accurate, based on experience with these systems.
  • the dashed line L separating surface limited region A and mass transport limited region B is similar to that of FIG. 3. Again, a zone of operation (defined by L1 and L2) exists wherein it is possible to obtain smooth deposits of silicon, while eliminating ridge growth and enhanced defect growth. As with FIG. 3, this zone also extends over the large deposition range of silicon by chemical vapor transport processes.
  • the basic procedures in determining a desired operating point are the same as in the germanium deposition system of H6. 3. That is, it is first decided whether operation is to be at a given temperature or at a given input concentration ratio Si/H Concentration of input reactants or temperature, respectively, is then varied in order to bring the deposition into the surface rate limited region. This will produce rough (faceted) surfaces and the direction of variation of concentration ratio and temperature is reversed and slowly changed in order to note the onset of smooth surface deposition.
  • the optimum operating point is that point which provides a smooth surface while eliminating ridge growth and enhanced defect growth.
  • initial operation can be in the surface rate limited region. Also, both temperature and concentration ratio can be varied simultaneously or separately to effect the process.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
US30789A 1970-04-22 1970-04-22 Process for forming uniform and smooth surfaces Expired - Lifetime US3661636A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3078970A 1970-04-22 1970-04-22

Publications (1)

Publication Number Publication Date
US3661636A true US3661636A (en) 1972-05-09

Family

ID=21856046

Family Applications (1)

Application Number Title Priority Date Filing Date
US30789A Expired - Lifetime US3661636A (en) 1970-04-22 1970-04-22 Process for forming uniform and smooth surfaces

Country Status (2)

Country Link
US (1) US3661636A (cg-RX-API-DMAC10.html)
FR (1) FR2092533A5 (cg-RX-API-DMAC10.html)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3925146A (en) * 1970-12-09 1975-12-09 Minnesota Mining & Mfg Method for producing epitaxial thin-film fabry-perot cavity suitable for use as a laser crystal by vacuum evaporation and product thereof
US4148939A (en) * 1974-08-19 1979-04-10 Korjukin Alexandr V Method of manufacturing a transparent body having a predetermined opacity gradient
US4447497A (en) * 1982-05-03 1984-05-08 Rockwell International Corporation CVD Process for producing monocrystalline silicon-on-cubic zirconia and article produced thereby
US4522662A (en) * 1983-08-12 1985-06-11 Hewlett-Packard Company CVD lateral epitaxial growth of silicon over insulators
US4526631A (en) * 1984-06-25 1985-07-02 International Business Machines Corporation Method for forming a void free isolation pattern utilizing etch and refill techniques
US4528047A (en) * 1984-06-25 1985-07-09 International Business Machines Corporation Method for forming a void free isolation structure utilizing etch and refill techniques
US4547231A (en) * 1983-07-08 1985-10-15 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing semiconductor device utilizing selective epitaxial growth under reduced pressure
US4592792A (en) * 1985-01-23 1986-06-03 Rca Corporation Method for forming uniformly thick selective epitaxial silicon
US4698316A (en) * 1985-01-23 1987-10-06 Rca Corporation Method of depositing uniformly thick selective epitaxial silicon
US20140216958A1 (en) * 2012-08-12 2014-08-07 Bevaswiss Ag Oxygen-impereable, fillable closure with a push button for triggering

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3301213A (en) * 1962-10-23 1967-01-31 Ibm Epitaxial reactor apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3301213A (en) * 1962-10-23 1967-01-31 Ibm Epitaxial reactor apparatus

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3925146A (en) * 1970-12-09 1975-12-09 Minnesota Mining & Mfg Method for producing epitaxial thin-film fabry-perot cavity suitable for use as a laser crystal by vacuum evaporation and product thereof
US4148939A (en) * 1974-08-19 1979-04-10 Korjukin Alexandr V Method of manufacturing a transparent body having a predetermined opacity gradient
US4447497A (en) * 1982-05-03 1984-05-08 Rockwell International Corporation CVD Process for producing monocrystalline silicon-on-cubic zirconia and article produced thereby
US4547231A (en) * 1983-07-08 1985-10-15 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing semiconductor device utilizing selective epitaxial growth under reduced pressure
US4522662A (en) * 1983-08-12 1985-06-11 Hewlett-Packard Company CVD lateral epitaxial growth of silicon over insulators
US4526631A (en) * 1984-06-25 1985-07-02 International Business Machines Corporation Method for forming a void free isolation pattern utilizing etch and refill techniques
US4528047A (en) * 1984-06-25 1985-07-09 International Business Machines Corporation Method for forming a void free isolation structure utilizing etch and refill techniques
US4592792A (en) * 1985-01-23 1986-06-03 Rca Corporation Method for forming uniformly thick selective epitaxial silicon
US4698316A (en) * 1985-01-23 1987-10-06 Rca Corporation Method of depositing uniformly thick selective epitaxial silicon
US20140216958A1 (en) * 2012-08-12 2014-08-07 Bevaswiss Ag Oxygen-impereable, fillable closure with a push button for triggering
US8960423B2 (en) * 2012-08-12 2015-02-24 Bevaswiss Ag Oxygen-impereable, fillable closure with a push button for triggering

Also Published As

Publication number Publication date
FR2092533A5 (cg-RX-API-DMAC10.html) 1972-01-21

Similar Documents

Publication Publication Date Title
US3473978A (en) Epitaxial growth of germanium
Hersee et al. A study of the orientation dependence of Ga (Al) As growth by MOVPE
US4786615A (en) Method for improved surface planarity in selective epitaxial silicon
US3385729A (en) Composite dual dielectric for isolation in integrated circuits and method of making
US5108947A (en) Integration of gaas on si substrates
EP0553852A2 (en) Process for producing semiconductor substrate
JPH01270593A (ja) 化合物半導体層形成方法
US3661636A (en) Process for forming uniform and smooth surfaces
US3663319A (en) Masking to prevent autodoping of epitaxial deposits
JP2636832B2 (ja) 材料蒸着技術
US3941647A (en) Method of producing epitaxially semiconductor layers
US4948751A (en) Moelcular beam epitaxy for selective epitaxial growth of III - V compound semiconductor
US4421576A (en) Method for forming an epitaxial compound semiconductor layer on a semi-insulating substrate
US3966513A (en) Method of growing by epitaxy from the vapor phase a material on substrate of a material which is not stable in air
US3698947A (en) Process for forming monocrystalline and poly
JP2528912B2 (ja) 半導体成長装置
Pain et al. Low temperature MOCVD of Hg1− xCdxTe on 311, 511, 711 and shaped GaAs
JP2733167B2 (ja) 化合物半導体薄膜の選択的成長方法
JP3080860B2 (ja) ドライエッチング方法
US6599758B2 (en) Post-epitaxial thermal oxidation for reducing microsteps on polished semiconductor wafers
US3420705A (en) Method of etching a semiconductor material
EP0289117B1 (en) Method of forming crystals on a substrate
JPH0597582A (ja) ダイヤモンド薄膜の堆積方法
JPH04199507A (ja) ３―Ｖ族化合物半導体へのｎ型不純物固相拡散方法
Yew et al. High structural quality epi/oxide boundaries of selective epitaxy grown by SiH4/H2 chemical vapor deposition using growth‐sputter cycles