US3658540A - Production of photographic materials with photosensitive compounds other than silver halides - Google Patents
Production of photographic materials with photosensitive compounds other than silver halides Download PDFInfo
- Publication number
- US3658540A US3658540A US667080A US3658540DA US3658540A US 3658540 A US3658540 A US 3658540A US 667080 A US667080 A US 667080A US 3658540D A US3658540D A US 3658540DA US 3658540 A US3658540 A US 3658540A
- Authority
- US
- United States
- Prior art keywords
- layer
- metal
- photosensitive
- silver
- lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 150000001875 compounds Chemical class 0.000 title claims description 30
- 229910052709 silver Inorganic materials 0.000 title claims description 21
- -1 silver halides Chemical class 0.000 title claims description 21
- 239000004332 silver Substances 0.000 title claims description 19
- 239000000463 material Substances 0.000 title abstract description 31
- 238000004519 manufacturing process Methods 0.000 title abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 16
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 229910052793 cadmium Inorganic materials 0.000 claims description 7
- 150000004820 halides Chemical class 0.000 claims description 7
- 229910052738 indium Inorganic materials 0.000 claims description 7
- 229910052797 bismuth Inorganic materials 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 5
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052714 tellurium Inorganic materials 0.000 claims description 5
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- 230000000737 periodic effect Effects 0.000 claims description 4
- 150000003346 selenoethers Chemical class 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052711 selenium Inorganic materials 0.000 claims description 3
- 239000011669 selenium Substances 0.000 claims description 3
- 150000004772 tellurides Chemical class 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 2
- 229910000765 intermetallic Inorganic materials 0.000 claims description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 2
- 150000003568 thioethers Chemical class 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 230000005855 radiation Effects 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 2
- 239000000126 substance Substances 0.000 description 10
- 238000000151 deposition Methods 0.000 description 7
- 230000035945 sensitivity Effects 0.000 description 7
- 238000001228 spectrum Methods 0.000 description 7
- 230000003595 spectral effect Effects 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 229910052745 lead Inorganic materials 0.000 description 4
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 4
- GEHJYWRUCIMESM-UHFFFAOYSA-L sodium sulfite Chemical compound [Na+].[Na+].[O-]S([O-])=O GEHJYWRUCIMESM-UHFFFAOYSA-L 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 206010073306 Exposure to radiation Diseases 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 150000004763 sulfides Chemical class 0.000 description 3
- 229910005542 GaSb Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- 239000000839 emulsion Substances 0.000 description 2
- 229920000159 gelatin Polymers 0.000 description 2
- 235000019322 gelatine Nutrition 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- XCAUINMIESBTBL-UHFFFAOYSA-N lead(ii) sulfide Chemical compound [Pb]=S XCAUINMIESBTBL-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000006303 photolysis reaction Methods 0.000 description 2
- 229910001961 silver nitrate Inorganic materials 0.000 description 2
- 235000010265 sodium sulphite Nutrition 0.000 description 2
- 229910052716 thallium Inorganic materials 0.000 description 2
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 108010010803 Gelatin Proteins 0.000 description 1
- 239000001828 Gelatine Substances 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 1
- 239000008273 gelatin Substances 0.000 description 1
- 235000011852 gelatine desserts Nutrition 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 208000017983 photosensitivity disease Diseases 0.000 description 1
- 231100000434 photosensitization Toxicity 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000001235 sensitizing effect Effects 0.000 description 1
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 description 1
- CMJCEVKJYRZMIA-UHFFFAOYSA-M thallium(i) iodide Chemical compound [Tl]I CMJCEVKJYRZMIA-UHFFFAOYSA-M 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
- G03C1/00—Photosensitive materials
- G03C1/705—Compositions containing chalcogenides, metals or alloys thereof, as photosensitive substances, e.g. photodope systems
Definitions
- ABSTRACT A- method of making a photographic material in which a [52] US. Cl. ..96/88, 96/48 PD photosensitive semiconductor layer is applied to the substrate [51] Int. Cl ..G03c U00 and a thin, radiatiompermeable layer i deposited thereon to Flew of Search -m-96/48, 67; 1 ags/6 5 6 5 1 stabilize the image formed upon radiation of the material.
- the invention relates to a process for the production of photographic materials on the basis of photosensitive compounds other than a silver halide, which photographic material is capable of yielding on exposure to radiation a direct positive latent image capable of intensification by physical development.
- the spectral sensitivity of such layers when sensitized with suitable dyes, can be extended so as to cover the spectral photoresponse of conventional photographic emulsions, which spectra do not exceed 1.3 to 1.4 microns in the infrared region.
- an object of the present invention to provide a method for the production of photographic materialswhich yield on exposure a direct positive'developable Iate'nt'image.
- a process for preparing photographic material capable of, yielding on imagewise exposure to radiation a direct positive developable image which comprises the steps ofde'pdsiting onto a carrier base first a thin layer of one or of several photosensitive compounds other than silver halide or semiconductors and then depositing thereonin direct contact with said first layer, an additional extremely thin radiation ing of at least two elements, such as halides, oxides, selenides, sulfides and'tellurides of Pb, of TI and of metals of Group l or II of the Period Table of the Elements, orintermetallic compounds of the elements of Group III or Group V of the Periodi'c'Table, and more particularly the halides of Cu, Pb, Tl, the oxides of Cd, Cu, Zn as well as GaAs, GaSb, CdTe, lnSb, PbS; the layer is deposited to a thickness between 0.1 and 10 microns, and more particularly between 0.3 and '1
- the two layers should be appropriately selected, so that the metal on top of the photosen: sitive substance is capable of reacting chemically with the primary product formed when electron holes are generatedon exposure to radiation in said photosensitive layer, thereby permanently trapping these holes.
- metal used in the top (metal) layer is selected so as to catalyze the deposition onto it of silver from an unstable, slowly decomposing solution of a silver salt.
- the photographic material when processed in a conventional physical developer, without any prior exposure to actinic radiation, turns black.
- the amount of metal is adjusted between 10 and 1 0*"g/cm and more particularly about 10" g/cm, so that it can effectively initiate physical development and secure desired maximal density and contrast of the image obtained after exposure and development.
- Such semiconductors consist of compounds of at least two elements and if they have a band gap not wider than 1 eV, a spectral sensitivity of the material in the far infraredspectrum beyond 1.3 microns is obtained.
- Such semiconductors include GaSb, lnSb and PbS, the metal layer being of Ag, In, Bi, Pb or another metal corresponding to an electronegative component of the semiconductor.
- the invention described makes replacement of possible to replace the silver halides in photographic materials by other much cheaper photosensitive substances.
- Another advantage of the invention is the provision of dif- "ferent photosensitive compounds with specific intrinsic sensitivity in the different regions of the spectrum by avoiding the spectral sensitizing of photographic materials with dyes; for example layers of cadmium, copper and thallium halides are sensitive in the ultraviolet, lead halides are sensitive in 'the middle of the visible spectrum, gallium antimonide, indium antimonide, and lead sulphide are sensitivein the far infrared region; By the suitable combination of layers deposited one upon the other, or a mixture of appropriate compounds, the sensitivity of the photographic materials can cover an arbitrarily predetermined region of the spectrum.
- the basic photosensitive layer does not decompose to a measurable extent on illumination (irradiation), if an additional layer of metal has not been deposited upon it. Therefore the new photographic medium has also the advantage, not previously present, that the production of the basic layers of photosensitive substances (as well as any doping of them with suitable additives enhancing their sensitivity) can be performed in diffuse daylight. The treatment and storing of these layers in the dark becomes necessary only after the deposition onto them of the thin metal layer, which operation for some purposes can be done immediately prior to exposure.
- the photoresponse of the material becomes negligible. Therefore the new material has still another advantage, not present previously, to the effect that the process of fixing is no longer necessary. In this way, if the starting photosensitive layer is thin and sufficiently transparent for visible radiation, which is usually the case, the image obtained after development is directly used for observation or projection.
- EXAMPLES l A layer of lead sulphide 0.1 to 1 microns thick is deposited onto a glass carrier. The said layer is further sensitized by heating in air at a temperature of about 500 C, thus obtaining an enhanced photoconductivity in the infrared region of the spectrum. Though sensitized, the layer in its present state is completely stable when exposed to diffuse daylight and can be handled and stored by light. Now 10*"g/c m of lead or of silver is deposited on this sensitized layer.
- the resultant product is a photographic material yielding a positive latent image even when exposed to infrared radiation with wavelength up to 3 microns.
- a known physical developer is used, consisting for example, of the following ingredients.
- Solution A Solution B metal 8.3 g Silver nitrate g citric acid 8.3 g water to make 45 ml acetic acid 42 g gelatin 6.7 g water to make 11 Before use 50 ml of solution A is mixed with 1 ml of solution B.
- a thin photosensitive layer of lnSb about 1 micron thick is quite stable when exposed to diffuse daylight.
- the deposition of approximately l g/cm of In upon this layer produces a photographic material sensitive to an infrared radiation with wavelength up to about 7 microns.
- On exposure a positive latent image is formed, which can be developed using the physical developer indicated in Example 1.
- a material sensitive to the visible region of the spectrum is produced on the deposition onto a glass carrier of a layer from 0.1 to 1 micron thick of Pbl2 or Til. These layers are completely stable by diffuse daylight. Either immediately or before use, 10*g/cm of Ag is deposited upon each of them. Now the layers prepared in this way undergo on exposure a permanent change a developable positive image being formed on them.
- the developer indicated in Example 1 may be used. With lead iodide better results are obtained with following developer.
- Solution A sodium sulphite, cryst. g sodium sulphite, cryst. 20 g silver nitrate 10% p-p 75 ml p-phenylendiamine 20 g water to make 1 gelatine 4 g water to make 1 1 Before use mix 35 ml of solution A and 10 ml of solution B.
- WHAT I CLAIM lS l. A method of making a photographic material, comprising the steps of depositing upon a carrier a layer of a normally stable and nonreactive photosensitive compound other than a silver halide; and depositing a radiationpermeable layer of a metal upon said compound and capable of reacting therewith upon photosensitization of said compound to stabilize an image formed by said compound.
- said compound is selected from the group which consists of the halides, oxides, selenides, sulphides, and tellurides of lead, tellurium metals of groups I and ll of the periodic table, intermetallic compounds and the elements of group III and group V of the periodic table, said layer of said compound having a thickness between 0.1 and 10 microns.
- said compound consists of at least two elements with a band gap greater than 1 electron volt formed and selected from the group which consists of cadmium antimonide, indium antimonide and lead sulphides, said layer of metal being composed of silver, bismuth, indium or lead.
Landscapes
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Silver Salt Photography Or Processing Solution Therefor (AREA)
- Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
BG156766 | 1966-12-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
US3658540A true US3658540A (en) | 1972-04-25 |
Family
ID=3897240
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US667080A Expired - Lifetime US3658540A (en) | 1966-12-31 | 1967-09-12 | Production of photographic materials with photosensitive compounds other than silver halides |
Country Status (4)
Country | Link |
---|---|
US (1) | US3658540A (en(2012)) |
BE (1) | BE703208A (en(2012)) |
FR (1) | FR1534597A (en(2012)) |
GB (1) | GB1151310A (en(2012)) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3907566A (en) * | 1971-07-23 | 1975-09-23 | Canon Kk | Photosensitive material containing inorganic compound coated metal particles and the use thereof in photographic development processes |
US4075016A (en) * | 1975-01-07 | 1978-02-21 | Ziafop Pri Ban | Positive-working photographic process and radiation elements utilizing a chalcogenide of arsenic imaging compound and a noble plating metal |
US4188214A (en) * | 1975-08-11 | 1980-02-12 | Fuji Photo Film Co., Ltd. | Recording material |
US4275141A (en) * | 1979-10-22 | 1981-06-23 | Corning Glass Works | Polycrystalline tin oxide-silver chloride-cadmium chloride UV photosensitive film and method of use |
US4291119A (en) * | 1975-08-11 | 1981-09-22 | Fuji Photo Film Co., Ltd. | Recording material |
US4318978A (en) * | 1976-11-05 | 1982-03-09 | Corning Glass Works | Photosensitive film and methods |
US4323640A (en) * | 1980-11-05 | 1982-04-06 | Corning Glass Works | Positive imaging method using doped silver halide medium |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE687248A (en(2012)) * | 1966-09-22 | 1967-03-22 | ||
US3637377A (en) * | 1966-11-03 | 1972-01-25 | Teeg Research Inc | Method for making a pattern on a support member by means of actinic radiation sensitive element |
US3637383A (en) * | 1966-11-03 | 1972-01-25 | Teeg Research Inc | Radiation-sensitive elements and etch processes using the same |
US3637378A (en) * | 1966-11-03 | 1972-01-25 | Teeg Research Inc | Radiation-sensitive element, provided with flexible base and methods for exposing and processing the same |
US3663224A (en) * | 1966-11-03 | 1972-05-16 | Teeg Research Inc | Electrical components, electrical circuits, and the like, and methods for making the same by means of radiation sensitive elements |
US3637379A (en) * | 1967-06-20 | 1972-01-25 | Teeg Research Inc | Method for making a relief pattern by means of electromagnetic radiation and heat-sensitive elements |
US3650743A (en) * | 1967-10-06 | 1972-03-21 | Teeg Research Inc | Methods for making lithographic offset plates by means of electromagnetic radiation sensitive elements |
BG18355A1 (en(2012)) * | 1972-11-15 | 1974-10-25 | ||
US4052211A (en) * | 1972-11-30 | 1977-10-04 | Fuji Photo Film Co., Ltd. | Image forming material |
FR2460205A1 (fr) * | 1979-07-03 | 1981-01-23 | Inst Elektrodinamiki Akademii | Materiau sensible aux radiations et procede d'enregistrement d'information sur le materiau sensible aux radiations |
JPS5724038A (en) * | 1980-07-18 | 1982-02-08 | Sony Corp | Information recording member |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3152904A (en) * | 1959-12-21 | 1964-10-13 | Minncsota Mining And Mfg Compa | Print-out process and image reproduction sheet therefor |
US3152903A (en) * | 1959-04-30 | 1964-10-13 | Minnesota Mining & Mfg | Reproduction system |
GB1064725A (en) * | 1962-09-07 | 1967-04-05 | Philips Nv | Improvements in or relating to manufacturing metallic images by photographic means |
US3453639A (en) * | 1964-04-15 | 1969-07-01 | Itek Corp | Electron beam recording on a photoconductive record medium |
-
1967
- 1967-08-23 FR FR118810A patent/FR1534597A/fr not_active Expired
- 1967-08-29 BE BE703208D patent/BE703208A/xx unknown
- 1967-09-12 US US667080A patent/US3658540A/en not_active Expired - Lifetime
- 1967-11-17 GB GB38265/67A patent/GB1151310A/en not_active Expired
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3152903A (en) * | 1959-04-30 | 1964-10-13 | Minnesota Mining & Mfg | Reproduction system |
US3152904A (en) * | 1959-12-21 | 1964-10-13 | Minncsota Mining And Mfg Compa | Print-out process and image reproduction sheet therefor |
GB1064725A (en) * | 1962-09-07 | 1967-04-05 | Philips Nv | Improvements in or relating to manufacturing metallic images by photographic means |
US3453639A (en) * | 1964-04-15 | 1969-07-01 | Itek Corp | Electron beam recording on a photoconductive record medium |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3907566A (en) * | 1971-07-23 | 1975-09-23 | Canon Kk | Photosensitive material containing inorganic compound coated metal particles and the use thereof in photographic development processes |
US4075016A (en) * | 1975-01-07 | 1978-02-21 | Ziafop Pri Ban | Positive-working photographic process and radiation elements utilizing a chalcogenide of arsenic imaging compound and a noble plating metal |
US4188214A (en) * | 1975-08-11 | 1980-02-12 | Fuji Photo Film Co., Ltd. | Recording material |
US4291119A (en) * | 1975-08-11 | 1981-09-22 | Fuji Photo Film Co., Ltd. | Recording material |
US4318978A (en) * | 1976-11-05 | 1982-03-09 | Corning Glass Works | Photosensitive film and methods |
US4275141A (en) * | 1979-10-22 | 1981-06-23 | Corning Glass Works | Polycrystalline tin oxide-silver chloride-cadmium chloride UV photosensitive film and method of use |
US4323640A (en) * | 1980-11-05 | 1982-04-06 | Corning Glass Works | Positive imaging method using doped silver halide medium |
Also Published As
Publication number | Publication date |
---|---|
GB1151310A (en) | 1969-05-07 |
DE1597606A1 (de) | 1970-06-04 |
FR1534597A (fr) | 1968-07-26 |
BE703208A (en(2012)) | 1968-01-15 |
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