US3658540A - Production of photographic materials with photosensitive compounds other than silver halides - Google Patents

Production of photographic materials with photosensitive compounds other than silver halides Download PDF

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Publication number
US3658540A
US3658540A US667080A US3658540DA US3658540A US 3658540 A US3658540 A US 3658540A US 667080 A US667080 A US 667080A US 3658540D A US3658540D A US 3658540DA US 3658540 A US3658540 A US 3658540A
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United States
Prior art keywords
layer
metal
photosensitive
silver
lead
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US667080A
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English (en)
Inventor
Jordan P Malinowski
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INST PHISIKOHIMIA PRI BULGARSK
INSTITUT PO PHISIKOHIMIA PRI BULGARSKA AKADEMIA NA NAUKITE
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INST PHISIKOHIMIA PRI BULGARSK
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03CPHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C1/00Photosensitive materials
    • G03C1/705Compositions containing chalcogenides, metals or alloys thereof, as photosensitive substances, e.g. photodope systems

Definitions

  • ABSTRACT A- method of making a photographic material in which a [52] US. Cl. ..96/88, 96/48 PD photosensitive semiconductor layer is applied to the substrate [51] Int. Cl ..G03c U00 and a thin, radiatiompermeable layer i deposited thereon to Flew of Search -m-96/48, 67; 1 ags/6 5 6 5 1 stabilize the image formed upon radiation of the material.
  • the invention relates to a process for the production of photographic materials on the basis of photosensitive compounds other than a silver halide, which photographic material is capable of yielding on exposure to radiation a direct positive latent image capable of intensification by physical development.
  • the spectral sensitivity of such layers when sensitized with suitable dyes, can be extended so as to cover the spectral photoresponse of conventional photographic emulsions, which spectra do not exceed 1.3 to 1.4 microns in the infrared region.
  • an object of the present invention to provide a method for the production of photographic materialswhich yield on exposure a direct positive'developable Iate'nt'image.
  • a process for preparing photographic material capable of, yielding on imagewise exposure to radiation a direct positive developable image which comprises the steps ofde'pdsiting onto a carrier base first a thin layer of one or of several photosensitive compounds other than silver halide or semiconductors and then depositing thereonin direct contact with said first layer, an additional extremely thin radiation ing of at least two elements, such as halides, oxides, selenides, sulfides and'tellurides of Pb, of TI and of metals of Group l or II of the Period Table of the Elements, orintermetallic compounds of the elements of Group III or Group V of the Periodi'c'Table, and more particularly the halides of Cu, Pb, Tl, the oxides of Cd, Cu, Zn as well as GaAs, GaSb, CdTe, lnSb, PbS; the layer is deposited to a thickness between 0.1 and 10 microns, and more particularly between 0.3 and '1
  • the two layers should be appropriately selected, so that the metal on top of the photosen: sitive substance is capable of reacting chemically with the primary product formed when electron holes are generatedon exposure to radiation in said photosensitive layer, thereby permanently trapping these holes.
  • metal used in the top (metal) layer is selected so as to catalyze the deposition onto it of silver from an unstable, slowly decomposing solution of a silver salt.
  • the photographic material when processed in a conventional physical developer, without any prior exposure to actinic radiation, turns black.
  • the amount of metal is adjusted between 10 and 1 0*"g/cm and more particularly about 10" g/cm, so that it can effectively initiate physical development and secure desired maximal density and contrast of the image obtained after exposure and development.
  • Such semiconductors consist of compounds of at least two elements and if they have a band gap not wider than 1 eV, a spectral sensitivity of the material in the far infraredspectrum beyond 1.3 microns is obtained.
  • Such semiconductors include GaSb, lnSb and PbS, the metal layer being of Ag, In, Bi, Pb or another metal corresponding to an electronegative component of the semiconductor.
  • the invention described makes replacement of possible to replace the silver halides in photographic materials by other much cheaper photosensitive substances.
  • Another advantage of the invention is the provision of dif- "ferent photosensitive compounds with specific intrinsic sensitivity in the different regions of the spectrum by avoiding the spectral sensitizing of photographic materials with dyes; for example layers of cadmium, copper and thallium halides are sensitive in the ultraviolet, lead halides are sensitive in 'the middle of the visible spectrum, gallium antimonide, indium antimonide, and lead sulphide are sensitivein the far infrared region; By the suitable combination of layers deposited one upon the other, or a mixture of appropriate compounds, the sensitivity of the photographic materials can cover an arbitrarily predetermined region of the spectrum.
  • the basic photosensitive layer does not decompose to a measurable extent on illumination (irradiation), if an additional layer of metal has not been deposited upon it. Therefore the new photographic medium has also the advantage, not previously present, that the production of the basic layers of photosensitive substances (as well as any doping of them with suitable additives enhancing their sensitivity) can be performed in diffuse daylight. The treatment and storing of these layers in the dark becomes necessary only after the deposition onto them of the thin metal layer, which operation for some purposes can be done immediately prior to exposure.
  • the photoresponse of the material becomes negligible. Therefore the new material has still another advantage, not present previously, to the effect that the process of fixing is no longer necessary. In this way, if the starting photosensitive layer is thin and sufficiently transparent for visible radiation, which is usually the case, the image obtained after development is directly used for observation or projection.
  • EXAMPLES l A layer of lead sulphide 0.1 to 1 microns thick is deposited onto a glass carrier. The said layer is further sensitized by heating in air at a temperature of about 500 C, thus obtaining an enhanced photoconductivity in the infrared region of the spectrum. Though sensitized, the layer in its present state is completely stable when exposed to diffuse daylight and can be handled and stored by light. Now 10*"g/c m of lead or of silver is deposited on this sensitized layer.
  • the resultant product is a photographic material yielding a positive latent image even when exposed to infrared radiation with wavelength up to 3 microns.
  • a known physical developer is used, consisting for example, of the following ingredients.
  • Solution A Solution B metal 8.3 g Silver nitrate g citric acid 8.3 g water to make 45 ml acetic acid 42 g gelatin 6.7 g water to make 11 Before use 50 ml of solution A is mixed with 1 ml of solution B.
  • a thin photosensitive layer of lnSb about 1 micron thick is quite stable when exposed to diffuse daylight.
  • the deposition of approximately l g/cm of In upon this layer produces a photographic material sensitive to an infrared radiation with wavelength up to about 7 microns.
  • On exposure a positive latent image is formed, which can be developed using the physical developer indicated in Example 1.
  • a material sensitive to the visible region of the spectrum is produced on the deposition onto a glass carrier of a layer from 0.1 to 1 micron thick of Pbl2 or Til. These layers are completely stable by diffuse daylight. Either immediately or before use, 10*g/cm of Ag is deposited upon each of them. Now the layers prepared in this way undergo on exposure a permanent change a developable positive image being formed on them.
  • the developer indicated in Example 1 may be used. With lead iodide better results are obtained with following developer.
  • Solution A sodium sulphite, cryst. g sodium sulphite, cryst. 20 g silver nitrate 10% p-p 75 ml p-phenylendiamine 20 g water to make 1 gelatine 4 g water to make 1 1 Before use mix 35 ml of solution A and 10 ml of solution B.
  • WHAT I CLAIM lS l. A method of making a photographic material, comprising the steps of depositing upon a carrier a layer of a normally stable and nonreactive photosensitive compound other than a silver halide; and depositing a radiationpermeable layer of a metal upon said compound and capable of reacting therewith upon photosensitization of said compound to stabilize an image formed by said compound.
  • said compound is selected from the group which consists of the halides, oxides, selenides, sulphides, and tellurides of lead, tellurium metals of groups I and ll of the periodic table, intermetallic compounds and the elements of group III and group V of the periodic table, said layer of said compound having a thickness between 0.1 and 10 microns.
  • said compound consists of at least two elements with a band gap greater than 1 electron volt formed and selected from the group which consists of cadmium antimonide, indium antimonide and lead sulphides, said layer of metal being composed of silver, bismuth, indium or lead.

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  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Silver Salt Photography Or Processing Solution Therefor (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
US667080A 1966-12-31 1967-09-12 Production of photographic materials with photosensitive compounds other than silver halides Expired - Lifetime US3658540A (en)

Applications Claiming Priority (1)

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BG156766 1966-12-31

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US3658540A true US3658540A (en) 1972-04-25

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BE (1) BE703208A (en(2012))
FR (1) FR1534597A (en(2012))
GB (1) GB1151310A (en(2012))

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3907566A (en) * 1971-07-23 1975-09-23 Canon Kk Photosensitive material containing inorganic compound coated metal particles and the use thereof in photographic development processes
US4075016A (en) * 1975-01-07 1978-02-21 Ziafop Pri Ban Positive-working photographic process and radiation elements utilizing a chalcogenide of arsenic imaging compound and a noble plating metal
US4188214A (en) * 1975-08-11 1980-02-12 Fuji Photo Film Co., Ltd. Recording material
US4275141A (en) * 1979-10-22 1981-06-23 Corning Glass Works Polycrystalline tin oxide-silver chloride-cadmium chloride UV photosensitive film and method of use
US4291119A (en) * 1975-08-11 1981-09-22 Fuji Photo Film Co., Ltd. Recording material
US4318978A (en) * 1976-11-05 1982-03-09 Corning Glass Works Photosensitive film and methods
US4323640A (en) * 1980-11-05 1982-04-06 Corning Glass Works Positive imaging method using doped silver halide medium

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE687248A (en(2012)) * 1966-09-22 1967-03-22
US3637377A (en) * 1966-11-03 1972-01-25 Teeg Research Inc Method for making a pattern on a support member by means of actinic radiation sensitive element
US3637383A (en) * 1966-11-03 1972-01-25 Teeg Research Inc Radiation-sensitive elements and etch processes using the same
US3637378A (en) * 1966-11-03 1972-01-25 Teeg Research Inc Radiation-sensitive element, provided with flexible base and methods for exposing and processing the same
US3663224A (en) * 1966-11-03 1972-05-16 Teeg Research Inc Electrical components, electrical circuits, and the like, and methods for making the same by means of radiation sensitive elements
US3637379A (en) * 1967-06-20 1972-01-25 Teeg Research Inc Method for making a relief pattern by means of electromagnetic radiation and heat-sensitive elements
US3650743A (en) * 1967-10-06 1972-03-21 Teeg Research Inc Methods for making lithographic offset plates by means of electromagnetic radiation sensitive elements
BG18355A1 (en(2012)) * 1972-11-15 1974-10-25
US4052211A (en) * 1972-11-30 1977-10-04 Fuji Photo Film Co., Ltd. Image forming material
FR2460205A1 (fr) * 1979-07-03 1981-01-23 Inst Elektrodinamiki Akademii Materiau sensible aux radiations et procede d'enregistrement d'information sur le materiau sensible aux radiations
JPS5724038A (en) * 1980-07-18 1982-02-08 Sony Corp Information recording member

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3152904A (en) * 1959-12-21 1964-10-13 Minncsota Mining And Mfg Compa Print-out process and image reproduction sheet therefor
US3152903A (en) * 1959-04-30 1964-10-13 Minnesota Mining & Mfg Reproduction system
GB1064725A (en) * 1962-09-07 1967-04-05 Philips Nv Improvements in or relating to manufacturing metallic images by photographic means
US3453639A (en) * 1964-04-15 1969-07-01 Itek Corp Electron beam recording on a photoconductive record medium

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3152903A (en) * 1959-04-30 1964-10-13 Minnesota Mining & Mfg Reproduction system
US3152904A (en) * 1959-12-21 1964-10-13 Minncsota Mining And Mfg Compa Print-out process and image reproduction sheet therefor
GB1064725A (en) * 1962-09-07 1967-04-05 Philips Nv Improvements in or relating to manufacturing metallic images by photographic means
US3453639A (en) * 1964-04-15 1969-07-01 Itek Corp Electron beam recording on a photoconductive record medium

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3907566A (en) * 1971-07-23 1975-09-23 Canon Kk Photosensitive material containing inorganic compound coated metal particles and the use thereof in photographic development processes
US4075016A (en) * 1975-01-07 1978-02-21 Ziafop Pri Ban Positive-working photographic process and radiation elements utilizing a chalcogenide of arsenic imaging compound and a noble plating metal
US4188214A (en) * 1975-08-11 1980-02-12 Fuji Photo Film Co., Ltd. Recording material
US4291119A (en) * 1975-08-11 1981-09-22 Fuji Photo Film Co., Ltd. Recording material
US4318978A (en) * 1976-11-05 1982-03-09 Corning Glass Works Photosensitive film and methods
US4275141A (en) * 1979-10-22 1981-06-23 Corning Glass Works Polycrystalline tin oxide-silver chloride-cadmium chloride UV photosensitive film and method of use
US4323640A (en) * 1980-11-05 1982-04-06 Corning Glass Works Positive imaging method using doped silver halide medium

Also Published As

Publication number Publication date
GB1151310A (en) 1969-05-07
DE1597606A1 (de) 1970-06-04
FR1534597A (fr) 1968-07-26
BE703208A (en(2012)) 1968-01-15

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