US3635761A - Electroless deposition of metals - Google Patents
Electroless deposition of metals Download PDFInfo
- Publication number
- US3635761A US3635761A US34863A US3635761DA US3635761A US 3635761 A US3635761 A US 3635761A US 34863 A US34863 A US 34863A US 3635761D A US3635761D A US 3635761DA US 3635761 A US3635761 A US 3635761A
- Authority
- US
- United States
- Prior art keywords
- metal
- substrate
- ligand
- complex
- metals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 94
- 239000002184 metal Substances 0.000 title claims abstract description 94
- 230000008021 deposition Effects 0.000 title claims abstract description 32
- 150000002739 metals Chemical group 0.000 title claims description 25
- 239000000758 substrate Substances 0.000 claims abstract description 75
- 238000000034 method Methods 0.000 claims abstract description 48
- 239000003638 chemical reducing agent Substances 0.000 claims abstract description 22
- 239000002904 solvent Substances 0.000 claims abstract description 22
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 14
- 239000001257 hydrogen Substances 0.000 claims abstract description 13
- 230000003197 catalytic effect Effects 0.000 claims abstract description 12
- 238000002156 mixing Methods 0.000 claims abstract description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 59
- 239000003446 ligand Substances 0.000 claims description 41
- 238000000151 deposition Methods 0.000 claims description 37
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 36
- 229910052697 platinum Inorganic materials 0.000 claims description 27
- 229910052763 palladium Inorganic materials 0.000 claims description 18
- -1 alkyl sulfide Chemical compound 0.000 claims description 14
- 239000002245 particle Substances 0.000 claims description 14
- 239000000203 mixture Substances 0.000 claims description 13
- XMGQYMWWDOXHJM-UHFFFAOYSA-N limonene Chemical compound CC(=C)C1CCC(C)=CC1 XMGQYMWWDOXHJM-UHFFFAOYSA-N 0.000 claims description 12
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 claims description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 10
- 125000000962 organic group Chemical group 0.000 claims description 9
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 claims description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- MGNZXYYWBUKAII-UHFFFAOYSA-N cyclohexa-1,3-diene Chemical compound C1CC=CC=C1 MGNZXYYWBUKAII-UHFFFAOYSA-N 0.000 claims description 8
- HGCIXCUEYOPUTN-UHFFFAOYSA-N cyclohexene Chemical compound C1CCC=CC1 HGCIXCUEYOPUTN-UHFFFAOYSA-N 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- 125000004122 cyclic group Chemical group 0.000 claims description 7
- FWFSEYBSWVRWGL-UHFFFAOYSA-N cyclohex-2-enone Chemical compound O=C1CCCC=C1 FWFSEYBSWVRWGL-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- BBDKZWKEPDTENS-UHFFFAOYSA-N 4-Vinylcyclohexene Chemical compound C=CC1CCC=CC1 BBDKZWKEPDTENS-UHFFFAOYSA-N 0.000 claims description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 claims description 6
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 125000003545 alkoxy group Chemical group 0.000 claims description 5
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 239000011651 chromium Substances 0.000 claims description 5
- 229910017052 cobalt Inorganic materials 0.000 claims description 5
- 239000010941 cobalt Substances 0.000 claims description 5
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 150000001993 dienes Chemical class 0.000 claims description 5
- 235000019253 formic acid Nutrition 0.000 claims description 5
- ZMZDMBWJUHKJPS-UHFFFAOYSA-N hydrogen thiocyanate Natural products SC#N ZMZDMBWJUHKJPS-UHFFFAOYSA-N 0.000 claims description 5
- 235000001510 limonene Nutrition 0.000 claims description 5
- 229940087305 limonene Drugs 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 229910052720 vanadium Inorganic materials 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- QWUWMCYKGHVNAV-UHFFFAOYSA-N 1,2-dihydrostilbene Chemical group C=1C=CC=CC=1CCC1=CC=CC=C1 QWUWMCYKGHVNAV-UHFFFAOYSA-N 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 4
- 125000004423 acyloxy group Chemical group 0.000 claims description 4
- 125000000217 alkyl group Chemical group 0.000 claims description 4
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 4
- 150000002431 hydrogen Chemical class 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052741 iridium Inorganic materials 0.000 claims description 4
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 239000010955 niobium Substances 0.000 claims description 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 4
- 229910052762 osmium Inorganic materials 0.000 claims description 4
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims description 4
- HKOOXMFOFWEVGF-UHFFFAOYSA-N phenylhydrazine Chemical compound NNC1=CC=CC=C1 HKOOXMFOFWEVGF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052702 rhenium Inorganic materials 0.000 claims description 4
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 4
- 229910052703 rhodium Inorganic materials 0.000 claims description 4
- 239000010948 rhodium Substances 0.000 claims description 4
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- 150000003505 terpenes Chemical class 0.000 claims description 4
- 235000007586 terpenes Nutrition 0.000 claims description 4
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims description 3
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical group O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 3
- 125000002252 acyl group Chemical group 0.000 claims description 3
- 229910052783 alkali metal Inorganic materials 0.000 claims description 3
- 229910000102 alkali metal hydride Inorganic materials 0.000 claims description 3
- 150000008046 alkali metal hydrides Chemical class 0.000 claims description 3
- 150000001340 alkali metals Chemical class 0.000 claims description 3
- 150000001408 amides Chemical class 0.000 claims description 3
- 150000001412 amines Chemical class 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 125000003435 aroyl group Chemical group 0.000 claims description 3
- 125000005333 aroyloxy group Chemical group 0.000 claims description 3
- 125000004104 aryloxy group Chemical group 0.000 claims description 3
- 239000000084 colloidal system Substances 0.000 claims description 3
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 150000002367 halogens Chemical class 0.000 claims description 3
- 150000004678 hydrides Chemical class 0.000 claims description 3
- 229910000037 hydrogen sulfide Inorganic materials 0.000 claims description 3
- 229940079826 hydrogen sulfite Drugs 0.000 claims description 3
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 3
- 239000000615 nonconductor Substances 0.000 claims description 3
- 239000011236 particulate material Substances 0.000 claims description 3
- 229910052716 thallium Inorganic materials 0.000 claims description 3
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims description 3
- 125000002813 thiocarbonyl group Chemical group *C(*)=S 0.000 claims description 3
- CMNUYDSETOTBDE-UHFFFAOYSA-N 1-benzyl-4h-pyridine-3-carboxamide Chemical compound C1=CCC(C(=O)N)=CN1CC1=CC=CC=C1 CMNUYDSETOTBDE-UHFFFAOYSA-N 0.000 claims description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 2
- 125000004356 hydroxy functional group Chemical group O* 0.000 claims 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 9
- 230000000694 effects Effects 0.000 abstract description 2
- 150000002430 hydrocarbons Chemical group 0.000 description 11
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 10
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 239000000047 product Substances 0.000 description 9
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 9
- 125000004429 atom Chemical group 0.000 description 8
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 6
- 239000002253 acid Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 238000010992 reflux Methods 0.000 description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 5
- 239000003054 catalyst Substances 0.000 description 5
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 5
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 4
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 125000000129 anionic group Chemical group 0.000 description 4
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 4
- PXZVHCZWVCPIRD-UHFFFAOYSA-J cyclohexene dichloroplatinum Chemical compound Cl[Pt]Cl.Cl[Pt]Cl.C1CCC=CC1.C1CCC=CC1 PXZVHCZWVCPIRD-UHFFFAOYSA-J 0.000 description 4
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical compound C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 4
- 230000007935 neutral effect Effects 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 4
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 150000001335 aliphatic alkanes Chemical class 0.000 description 3
- JFDZBHWFFUWGJE-UHFFFAOYSA-N benzonitrile Chemical compound N#CC1=CC=CC=C1 JFDZBHWFFUWGJE-UHFFFAOYSA-N 0.000 description 3
- 239000003153 chemical reaction reagent Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- BBKFSSMUWOMYPI-UHFFFAOYSA-N gold palladium Chemical compound [Pd].[Au] BBKFSSMUWOMYPI-UHFFFAOYSA-N 0.000 description 3
- 229960004337 hydroquinone Drugs 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 2
- MYRTYDVEIRVNKP-UHFFFAOYSA-N 1,2-Divinylbenzene Chemical compound C=CC1=CC=CC=C1C=C MYRTYDVEIRVNKP-UHFFFAOYSA-N 0.000 description 2
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical compound CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000012153 distilled water Substances 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 150000002170 ethers Chemical class 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 125000000623 heterocyclic group Chemical group 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 150000005673 monoalkenes Chemical class 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000011541 reaction mixture Substances 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- RRKODOZNUZCUBN-CCAGOZQPSA-N (1z,3z)-cycloocta-1,3-diene Chemical compound C1CC\C=C/C=C\C1 RRKODOZNUZCUBN-CCAGOZQPSA-N 0.000 description 1
- YHHHHJCAVQSFMJ-FNORWQNLSA-N (3e)-deca-1,3-diene Chemical compound CCCCCC\C=C\C=C YHHHHJCAVQSFMJ-FNORWQNLSA-N 0.000 description 1
- OGQVROWWFUXRST-FNORWQNLSA-N (3e)-hepta-1,3-diene Chemical compound CCC\C=C\C=C OGQVROWWFUXRST-FNORWQNLSA-N 0.000 description 1
- GQVMHMFBVWSSPF-SOYUKNQTSA-N (4E,6E)-2,6-dimethylocta-2,4,6-triene Chemical compound C\C=C(/C)\C=C\C=C(C)C GQVMHMFBVWSSPF-SOYUKNQTSA-N 0.000 description 1
- AFVDZBIIBXWASR-AATRIKPKSA-N (E)-1,3,5-hexatriene Chemical compound C=C\C=C\C=C AFVDZBIIBXWASR-AATRIKPKSA-N 0.000 description 1
- PMJHHCWVYXUKFD-SNAWJCMRSA-N (E)-1,3-pentadiene Chemical compound C\C=C\C=C PMJHHCWVYXUKFD-SNAWJCMRSA-N 0.000 description 1
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 description 1
- VYXHVRARDIDEHS-UHFFFAOYSA-N 1,5-cyclooctadiene Chemical compound C1CC=CCCC=C1 VYXHVRARDIDEHS-UHFFFAOYSA-N 0.000 description 1
- 239000004912 1,5-cyclooctadiene Substances 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- XNXUVIQXKVKKGS-UHFFFAOYSA-N 3,6-dimethylocta-2,6-dien-4-yne Chemical compound CC=C(C)C#CC(C)=CC XNXUVIQXKVKKGS-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical class CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- PGTKVMVZBBZCKQ-UHFFFAOYSA-N Fulvene Chemical compound C=C1C=CC=C1 PGTKVMVZBBZCKQ-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical group C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229930194542 Keto Natural products 0.000 description 1
- 241001446467 Mama Species 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- ZMZDMBWJUHKJPS-UHFFFAOYSA-M Thiocyanate anion Chemical compound [S-]C#N ZMZDMBWJUHKJPS-UHFFFAOYSA-M 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 150000001361 allenes Chemical class 0.000 description 1
- 229910000323 aluminium silicate Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- RHCCUQVVABYRDN-UHFFFAOYSA-N barrelene Chemical compound C1=CC2C=CC1C=C2 RHCCUQVVABYRDN-UHFFFAOYSA-N 0.000 description 1
- HVURSIGIEONDKB-UHFFFAOYSA-N benzene;chromium Chemical compound [Cr].C1=CC=CC=C1.C1=CC=CC=C1 HVURSIGIEONDKB-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- WFYPICNXBKQZGB-UHFFFAOYSA-N butenyne Chemical compound C=CC#C WFYPICNXBKQZGB-UHFFFAOYSA-N 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 239000003729 cation exchange resin Substances 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- GQVMHMFBVWSSPF-UHFFFAOYSA-N cis-alloocimene Natural products CC=C(C)C=CC=C(C)C GQVMHMFBVWSSPF-UHFFFAOYSA-N 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 150000001925 cycloalkenes Chemical class 0.000 description 1
- HWEQKSVYKBUIIK-UHFFFAOYSA-N cyclobuta-1,3-diene Chemical compound C1=CC=C1 HWEQKSVYKBUIIK-UHFFFAOYSA-N 0.000 description 1
- CHVJITGCYZJHLR-UHFFFAOYSA-N cyclohepta-1,3,5-triene Chemical compound C1C=CC=CC=C1 CHVJITGCYZJHLR-UHFFFAOYSA-N 0.000 description 1
- ICPMUWPXCAVOOQ-UHFFFAOYSA-N cycloocta-1,3,5-triene Chemical compound C1CC=CC=CC=C1 ICPMUWPXCAVOOQ-UHFFFAOYSA-N 0.000 description 1
- KDUIUFJBNGTBMD-VXMYFEMYSA-N cyclooctatetraene Chemical compound C1=C\C=C/C=C\C=C1 KDUIUFJBNGTBMD-VXMYFEMYSA-N 0.000 description 1
- LIWZSNTUMSGWTF-UHFFFAOYSA-N deca-4,6-diyne Chemical compound CCCC#CC#CCCC LIWZSNTUMSGWTF-UHFFFAOYSA-N 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 235000019439 ethyl acetate Nutrition 0.000 description 1
- 239000000706 filtrate Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- PNMYNXREEKCUGV-UHFFFAOYSA-N hepta-1,6-dien-3-yne Chemical compound C=CCC#CC=C PNMYNXREEKCUGV-UHFFFAOYSA-N 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- AHAREKHAZNPPMI-UHFFFAOYSA-N hexa-1,3-diene Chemical compound CCC=CC=C AHAREKHAZNPPMI-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000003456 ion exchange resin Substances 0.000 description 1
- 229920003303 ion-exchange polymer Polymers 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 125000000468 ketone group Chemical group 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052987 metal hydride Inorganic materials 0.000 description 1
- 150000004681 metal hydrides Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 239000002808 molecular sieve Substances 0.000 description 1
- 125000004971 nitroalkyl group Chemical group 0.000 description 1
- UBAOHSDCTCLHQF-UHFFFAOYSA-N nona-1,6-diyne Chemical compound CCC#CCCCC#C UBAOHSDCTCLHQF-UHFFFAOYSA-N 0.000 description 1
- SJYNFBVQFBRSIB-UHFFFAOYSA-N norbornadiene Chemical compound C1=CC2C=CC1C2 SJYNFBVQFBRSIB-UHFFFAOYSA-N 0.000 description 1
- CKRXBCDXHHIQDX-UHFFFAOYSA-N octa-1,5-diyne Chemical compound CCC#CCCC#C CKRXBCDXHHIQDX-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 150000007876 p-menthadiene derivatives Chemical class 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- RYIOLWQRQXDECZ-UHFFFAOYSA-N phosphinous acid Chemical compound PO RYIOLWQRQXDECZ-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000012254 powdered material Substances 0.000 description 1
- 239000012255 powdered metal Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000003822 preparative gas chromatography Methods 0.000 description 1
- 239000008262 pumice Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 1
- 125000001273 sulfonato group Chemical group [O-]S(*)(=O)=O 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- ZCUFMDLYAMJYST-UHFFFAOYSA-N thorium dioxide Chemical compound O=[Th]=O ZCUFMDLYAMJYST-UHFFFAOYSA-N 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/42—Coating with noble metals
- C23C18/44—Coating with noble metals using reducing agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/52—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating using reducing agents for coating with metallic material not provided for in a single one of groups C23C18/32 - C23C18/50
Definitions
- This s ecification discloses a method for electroless de osi- [56] References cued tion 0t a metal upon a substrate.
- the substrate is one that l ias 21 UNITED STATES PATENTS catalytic surface capable of influencing deposition of the metal.
- the method involves mixing the substrate with a solu- Beer X ⁇ ion comprising a ucomplex of the metal to be deposited on 3,295,999 1/1967 Klein at 17/47 X the substrate dissolved in a nonaqueous solvent.
- the field of the invention comprises electroless deposition.
- the useful metal pi-complexes are broadly characterized by the presence ofa central or nuclear metal atom having bonded thereto at least one ligand in the form of an organic group containing at least one carbon-to-carbon multiple bond.
- the multiple bond which is either a double or a triple bond, the group is bonded to the metal through the pi electrons of the bond, the resulting attachment being described as a coordinate covalent bond.
- the sigma electrons of the multiple bond provide a carbon'to-carbon attachment described as a covalent bond.
- the unsaturated organic group is preferably an unsaturated hydrocarbon group, or one derived therefrom, i.e., a substituted unsaturated hydrocarbon group, and it preferably has two or more of said multiple bonds.
- the central metal atom is preferably platinum or palladium or other transition metal.
- the complex also contains one or more other ligands different from said organic group and which may be either anionic or neutral, and preferably singly charged, such as a halide ion.
- a specific illustrative complex is l,5-cyclooctadieneplatinurn (ll) dichloride, the structure of which may be represented as follows:
- R is the unsaturated organic group or ligand
- M is the central metal atom
- X is the anionic or neutral ligand described above as the other ligand
- m and n are integers.
- R is preferably an unsaturated hydrocarbon group, which may or may not be substituted by one or more substituents.
- Preferred unsaturated hydrocarbon groups are olefinic ligands derived from open chain diolefins having three to 24 carbon atoms, particularly unconjugated diolefins like 1,5-dienes, and including allene, butadiene, isoprene, pen tadiene, hexadiene, heptadiene, diisobutenyl, decadiene, and the like.
- oligo-olefins such as hexatriene, 2,6-dimethyl2,4,6-octatriene, etc.
- cyclic diolefrns and cyclic oligo-olefms particularly unconjugated compounds like l,5-cyclodienes, and including cyclobutadiene, cyclopentadiene, fulvene, norbornadiene, cyclooctadiene, dicyclopentadiene, 4-vinylcyclohexene, limonene, dipentene, cycloheptatriene, cyclooctatriene, bicyclo(2.2.2)octa-2,5,7-triene, cyclononal ,4,7-triene, cyclooctatetraene, and the like.
- heterocyclic diand oligo-olefins like heterocyclopentadiene which is intended to refer to all five-membered ring systems in which a hetero atom like phosphorus, oxygen, iron, nickel, cobalt, etc., replaces a methylene group of cyclopentadiene.
- suitable unsaturated hydrocarbon groups are derived from the acetylenes such as the hexadiynes, heptadiynes, octadiynes, l,8-nonadiyne, 4,6-decadiyne, dodecatriyne, and the like.
- Unsaturated hydrocarbon groups having both double and triple bonds are of value, such as butenyne, 1,6-heptadien-3-yne, 3,6-dimethyl-2,6-octadien-4- yne, l,7-octaenyne, etc. Or a mixture of an olefinic ligand and an acetylenic ligand of the foregoing types may be suitable.
- R the unsaturated hydrocarbon group
- R may have two or more double and/or triple bonds, and may have an open chain or a cyclic structure.
- R may be an unsaturated cyclic or heterocyclic having one double bond, or it may be a monoolefin having two or more carbon atoms such as that derived from ethylene, styrene, and the like; or it may be a monoacetylenic acetylene group; or an aromatic ligand like benzene or phenyl.
- R may have various substituents, and these may include alkyl, aryl, alkoxy, halogen, carboxyl, ester, keto, and the like, it being understood that, as so substituted, the resulting substituted R group is capable of pi-electron bonding to the metal atom M.
- the atom M is a metal.
- Metals which can be employed are the metals of Groups VIII, lB, IVB, VB, VlB, and VIIB.
- the metals of Group IIIA except boron may also be employed.
- the metals of Group VIII are iron, cobalt, nickel, ruthenium, rhodium, palladium, osmium, iridium, and platinum.
- the metals of Group 18 are copper, silver, and gold, of Group IVB are titanium, zirconium, and hafnium, of VB are vanadium, niobium, and tantalum, and of WE are chromium, molybdenum, and tungsten.
- the metals of Group VllB are manganese and rhenium.
- the metals of Group IIIA, except boron are aluminum, gallium, indium, and thallium. Particularly preferred metals are palladium, platinum, and aluminum.
- Group X of formula (ll) is preferably a halidelike Cl, Br, F, and I.
- Other suitable groups are alkyl, acyl, amine, ammonia, acyloxy, alkyl sulfide, aryl sulfide, carbonyl, cyanide, isocyanide, hydrogen sulfide, nitrosyl, hydroxy, phosphine, thiocarbonyl, thionitrosyl, and water.
- the group R in formula (ll) is an anionic group if it loses a proton; and if no proton is lost, it is treated as a neutral group. In computing the oxidation number of the central metal atom, the group R if anionic, is counted as negative; if neutral, it is counted as having zero charge.
- the preferred ligands R and X are those that do not contaminate the metal surface, either because of their nature, such as alkoxy and acyloxy ligands, or because they pass off as gases, such as Cl and Br which pass off as l-lCl and HBr, or because they are converted under reaction conditions to compounds that do not contaminate, such as olefms and dienes which form saturated hydrocarbons.
- R and X ligands are denoted by the subscripts m and n; thus m may vary from I to 8, and n from 7 to 0, while their sum varies from 2 to 8. These variations, of course, are determined by the nature of the metal M and by its state of oxidation. The oxidation state of the metals as a group may range from to 8, it being understood, as a glance at the periodic table will show, that some metals exhibit more oxidation states than others. It should be remembered thatsome v ligands may have two bonds attached thereto. It will be seen that at least one R group is always present in formula (II).
- R,,,M where m may vary from 2 to 8; in complexes of this type, M is usually a metal of Group VIII or is chosen from chromium, titanium, rhenium, or vanadium.
- Preferred complexes are denoted by such formulas as RMX RMX RMX R MX R MX and R MX Generally, and as is preferred, the useful complexes have one central or nuclear metal atom; however, the invention also contemplates complexes having two such atoms, either the same or different, as in azulenehexacarbonyldimolybdenum, C, l-l,,Mo (CO) or in l,3-bis-(styrene)-2,4-dichloro- ,u-dichloro-diplatinum (ll), C, H, Pt- C,., and the complex is designated a dinuclear complex.
- dicyclopentadieneplatinum(ll) dichloride l,3-butadienepalladium( ll) dichloride 1,3,5-cycloheptatrieneplatinum(II) dichloride norbornadienepalladium(ll) dibromide 1,3,5 ,7-cyclooctatetraeneplatinum(ll) dichloride 2,5-dimethyl-l,5-hexadieneplatinum(ll) dichloride bis(1r-allylnickel iodide) l,5-cyclooctadienegold(lll) trichloride 9. (l,7-octadiyne)platinum(ll) dichloride A complex like No.
- a complex like No. 2 may be prepared by using the method of Kharasch et al. JACS 60 882-4 (1938), as extended in Inorganic Synthesis Vl 218-9, which involves using palladium(ll) chloride as a starting material, reacting this with benzonitrile, and then reacting'the resulting product with 1,3- butadiene.
- Vl 218-9 extended in Inorganic Synthesis
- carbonyl groups are present, as ligands, the corresponding metal carbonyl may be used as a starting compound and reacted with a suitable olefinic material.
- Other methods for preparing the complexes are available.
- the desired complex is suitably dissolved in a nonaqueous solvent, the substrate is mixed with the solution and is, of course, insoluble therein, and then a reducing agent like hydrogen gas is bubbled through the mixture for a suitable period of time sufficient to reduce at least a portion of the complex to form elemental metal.
- a reducing agent like hydrogen gas is bubbled through the mixture for a suitable period of time sufficient to reduce at least a portion of the complex to form elemental metal.
- a reducing agent like hydrogen gas is bubbled through the mixture for a suitable period of time sufficient to reduce at least a portion of the complex to form elemental metal.
- a reducing agent like hydrogen gas is bubbled through the mixture for a suitable period of time sufficient to reduce at least a portion of the complex to form elemental metal.
- the resulting coated substrate comprises the product. Good stirring of the solution should be used.
- the surfaces of the substrate are believed to catalyze the deposition of metal thereon; a reducing agent for the complex is present; more than a monolayer of metal is deposited on the substrate, i.e., the metal continues to deposit as long as any complex is present to be reduced; and the metal deposits only on the substrate, substantially none being deposited in the solution external to the substrate, or on the walls of the vessel, or on noncatalytic surfaces of other solids that may be present.
- the last factor enhances the economics of the method as it eliminates waste of metal.
- Suitable nonaqueous solvents include alkanes like hexane; aromatics like benzene (preferably thiophene-free) and toluene; halogenated alkanes and aromatics like trichloroethane, chlorobenzene, chloroform, and carbon tetrachloride; esters like methyl and ethyl acetates; ethers like dioxane and diethyl ether, ketones like acetone and methyl ethyl ketone.
- the chlorinated alkanes; aromatics, ketones, and ethers are preferred.
- nitroalkanes are also contemplated.
- a more volatile solvent is to be chosen as against a less volatile one in order to facilitate its removal at the end of the deposition step.
- Hydrogen is the preferred reducing agent as it is not only effective but, being gaseous, does not remain in the reaction mixture.
- Other agents that may be used include formic acid, and alkali metal hydrides and borohydrides.
- the unsaturated hydrocarbon group, R in formula (ll) may act as the reducing agent for decomposing the complex, as frequently R is a hydroaromatic moiety.
- R may act as the reducing agent for decomposing the complex, as frequently R is a hydroaromatic moiety.
- R is a hydroaromatic moiety.
- the ligand X if it is group like Cl, may react to form HCl, which under the reaction conditions can leave the reaction mixture as a gaseous product.
- the substrate may be any suitable solid porous or nonporous material which provides a catalytic surface capable of influencing deposition of the metal and which, of course, is insoluble in the solution of the complex. It may have any suitable shape, ranging from a powdered or granular material to larger objects, including screens and sheet material. Desirably, the substrate is a material or object or device which, when coated with metal, forms a useful product such as a catalyst, an electronic component, a metallized plastic, etc. Quantitative deposits of metal have been obtained on substrates like platinum foil, particles of alumina having a thin layer of platinum, cation exchange resin particles having a thin palladium or platinum coating, alumina particles coated-with palladium, gold foil.
- a substrate does not originally have the desired catalytic surface, such a surface may be formed by placing on it a layer of a catalytic metal like platinum or palladium, etc., as illustrated in example 3. It should be pointed out that a substrate which initially has a catalytic surface does not lose it, after metal deposition begins, as the deposited metal exercises a catalytic influence.
- preferred substrates comprise particulate materials having a particle size in the colloid size range, which is considered to extend from 10 to about 10,000 angstrom units.
- Other preferred illustrative substrates may be larger, ranging from 0.5 micron to 0.25 inch in diameter.
- the substrates may include materials like the crystalline aluminosilicate molecular sieves; inorganic metal oxides like alumina, silica, silica-alumina, thoria, vanadia, zirconia, titania, zinc oxide, etc.; also boron nitride, pumice, silicon carbide, etc.; also cellulose and glass; and various polymers like the polyolefms, fluorinated hydrocarbon polymers, polyamides, polyesters, etc. Also suitable are ion exchange resins; and conducting materials like graphite, carbon black, powdered metals like copper and silver, fine mesh metal screens, etc.
- the temperature of the electroless deposition generally varies from room, or somewhat below, to refluxing tempera tures. With normally liquid reducing agents like formic acid the temperature may range to 100 C. or more; and with some agents the temperature can go up to 200 or 300 C. or more. The temperature should not exceed the thermal decomposition point ofthe complex, which may be above 200 or 300 C.
- the time required for the deposition is variable and will depend, together with the temperature, on the complex and its amount, among other things; generally the time may extend over a period of several minutes to several hours. In respect of concentration of the complex in the deposition solution, it may be stated that higher concentrations favor higher deposition rates. Both lower and higher concentrations are useful to deposit small amounts of metal, but at lower concentrations less control is involved.
- the concentration may vary over a wide range, going from about 0.01 percent by weight, or less, to saturation.
- the substrate concentration there are no practical limits.
- the deposit may vary in thickness from one or a few monolayers, or even from an incomplete monolayer, to any desired thicker deposit.
- hard and smooth deposits intimately bonded to the substrate surfaces are obtainable; these may be controlled to have a bright or a rough finish.
- the deposits may be as complete and continuous as desired, thus providing for good electrical conductivity.
- metal is depositable on the surfaces of the internal pores.
- the metal it is preferred to deposit all or substantially all of the metal on the substrate, with none being deposited in the external solution.
- certain complexes made from monoolefins such as l,3-bis-(styrene)-2,4-dichloro-p.-
- dichlorodiplatinumfll when hydrogen is used as reducing agent and in the presence of hydroxylated solvents like alcohols or carboxylic acids, deposition of metal may take place partly on the substrate and partly in the external solution.
- This type of deposition may be useful for some purposes, as where it is desired to make a catalyst comprising a mixture of (1) particles comprising a metal-coated substrate, especially where the amount of coating is very low, and (2) particles of the metal per se.
- metal pi-complexes described include complexes having pi-allylic ligands, as illustrated by 1rallyl-1r-cyclopentadienyl'platinum, or by dibenzene chromium.
- the deposition solution may contain two or more different metal pi-complexes each containing the same or a different metal.
- the metal of each of the pi-complexes being different, the two or more different metals deposit simultaneously on the substrate.
- a mixture, for example, an alloy, of two or more different metals may be deposited on the substrate.
- EXAMPLE 2 A platinum pi-complex was prepared by adding ml. 1,5- cyclooctadiene to 50 ml. Zeises acid solution, as prepared in example 1, and refluxing overnight. A precipitate was formed which was filtered, washed with ethanol, washed with ether,
- EXAMPLE 3 A platinum-coated alumina substrate was prepared by adding 400 g. alumina powder to a solution of 2.0 g. of the complex of example 2 in 1,500 ml. of 2-methoxyethanol; this mixture was stirred, refluxed a few minutes, then cooled, filtered, washed with chloroform and methanol, and dried in vacuo.
- the resulting substrate comprised particles of alumina having a thin coating of platinum in an amount of about 0.1 percent by weight.
- EXAMPLE 4 The complex of example 2 was subjected to electroless deposition in the presence of the substrate of example 3 by first suspending 1.01 g. of substrate in 10 ml. benzene, adding 70 mg. complex thereto, and then bubbling hydrogen gas through the solution over a period of 1 hour. The substrate particles were then filtered, washed, and dried. About 30 mg. of platinum deposited on the substrate. The resulting mate rial, comprising platinum on alumina, was used as catalyst for the hydrogenation of l-hexyne. About 1 ml. of the latter was mixed with mg. of the catalyst and 25 ml.
- EXAMPLE 5 Using the procedure of example 2, the following complexes were prepared (see Nos. 1 through 5 in the table below) and tested. Weighed amounts of the complexes were subjected to electroless deposition, using the substrate set forth in example 3 and trichloroethane as solvent. Hydrogen was bubbled through each solution at the same rate over a period of 60 minutes. In each case the amount of substrate was 1 g. and 10 ml. of solvent was used. At the conclusion of the tests, the amount of metal deposited on the substrate was accurately determined. The following data were obtained, including a control in which the substrate was omitted.
- EXAMPLE 6 The complex of example 2 was reduced in the presence of the coated substrate of example 3, using various reducing agents, amounts thereof, solvents, reducing times, and temperatures. The results are tabulated below as run Nos. 4 1 through 12.
- the amount of solvent was ml., except for Nos. 1 l and 12 where 10 and ml., respectively, were used
- the weight of complex was 0.14 g., except for No. 12 where 0.05 g. was used
- the weight of alumina was 2.0 g., except that in No. 12 0.5 g. was present.
- the reducing agent was dissolved in the solvent; and the temperature was the refluxing temperature of the solution.
- the resultant materials were then filtered, washed with chloroform, and dried at 1 10 C.
- the product of deposition A was found to contain a goldpalladium alloy that was about 80 percent palladium.
- the product of deposition B was found to contain a goldpalladium alloy that was about 65 percent palladium.
- the sequence of addition of the complex, solvent, or reducing agent, or of the substrate is not material.
- the amount of platinum that deposited on the substrate ranged from about 8 to about 88 percent ofthe theoretical.
- EXAMPLE 7 reducing agent was employed. About 0.10 g. of 4-vinyl-' cyclohexenedichloroplatinum (ll) was dissolved in 10 ml. of dioxane in the presence of 0.60 g. of the coated substrate produced in example 3. The mixture was stirred for 2 hours at refluxing temperature (100 C.), and a definite observable deposition of platinum on the substrate took place, the metal appearing black. Visual inspection of the particles at the end of the run showed a heavy coating of metal. Thus, the 4-vinylcyclohexene moiety of the complex, under the conditions of the experiment, functioned as reducing agent. When silica gel and uncoated alumina were used as substrates, no deposition occurred, indicating that their surfaces were not per se catalytic.
- EXAMPLE 8 This example illustrates the electroless deposition of a goldpalladium alloy.
- a gold reagent solution (0) was prepared by dissolving 1.77 g. of chloroauric acid in 200 ml. chloroform at the reflux temperature. This solution was then dried by the addition of anhydrous calcium chloride.
- a palladium reagent solution (P) was prepared by dissolving 2.22 g. of l,5-cyclooc' tadienepalladiumfll) dichloride in 200 ml. chloroform.
- the substrate for deposition consisted of solid particles of a porous copolymer of styrene and divinylbenzene, which had been sulfonated and the sulfonate groups exchanged to the sodium form. Within the porous matrix of this polymer, zerovalent palladium had been incorporated in catalytic amounts (0.4 percent on a weight basis).
- the two reagent solutions were mixed in equal proportions, 0.5 g. of the substrate was added, and hydrogen was bubbled through the solutions at room temperature for various lengths of time. The exact proportions of solutions and reaction times are presented in the following table.
- Method for electrolessly depositing a metal selected from the group'consisting ofiron, cobalt, nickel, ruthenium, rhodium, palladium, osmium, iridium, platinum, copper, silver, gold, titanium; zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, manganese, rh'enium, aluminum, gallium, indium, and thalliuin on a substrate having a catalytic surface capable of influencing deposition of said metal which comprises mixing said substrate with (I a solution comprising a pi-complex of said metal dissolved in a nonaqueous solvent therefor, said mixing being at a tempera- 5 ture which does not exceed the thermal decomposition point of said complex, and with (2) a reducing agent selected from the group consisting of hydrogen, formic acid, alkali metal hydrides, alkali metal borohydrides, dibenzyl, hydrazo
- said other ligand is selected from halogen, carbonyl, alkyl, acyl, acyloxy, amine, ammonia, phosphine, cyanide, isocyanide, nitrosyl, alkyl sulfide, aryl sulfide, hydroxy, hydrogen sulfide, thionitrosyl, thiocarbonyl, water, hydride, amide, aryloxy, aroyl, aroyloxy, hydrogen sulfite, thiocyanate, and alkoxy.
- a substrate having a catalytic surface capable of influencing deposition of said metal which comprises mixing said substrate with (l) a solution comprising a pi-complex of each of said two or more metals dissolved in a nonaqueous solvent therefor, said mixing being at a temperature which does not exceed the thermal decomposition point of said complexes, and with (2) a reducing agent selected from the group consisting of hydrogen, formic acid, alkali.
- each of said complexes having at least one ligand in the form of an organic group containing at least one carbon-to-carbon multiple bond, said group by virtue of said multiple bond being capable of pi-electron bonding to the metal of said complex, thereby decomposing said complexes to form elemental metal, and depositing said elemental metals as a mixture on said substrate.
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Abstract
This specification discloses a method for electroless deposition of a metal upon a substrate. The substrate is one that has a catalytic surface capable of influencing deposition of the metal. The method involves mixing the substrate with a solution comprising a pi -complex of the metal to be deposited on the substrate dissolved in a nonaqueous solvent. There is also added to the solution a reducing agent such as hydrogen. The reducing agent effects reduction of the complex thereby decomposing the complex to form elemental metal. The elemental metal then deposits on the substrate.
Description
I United States Patent 1151 3,635,761 Haag et a1. Jan. 18, 1972 54] ELECTROLESS DEPOSITION OF 2,719,799 10/1955 Rosenblatt et a1. ..117/54 x METALS 2,853,398 9/1958 Mackin et al. .117 47 2,922,803 1/1960 Kaufman 260/429 [72] Inventors: Werner 0. Hang, Trenton; Darrell Duayne 2,930,807 4/1961 case X whitehurs" Tlmsvlne, 2,980,741 4/1962 Zeiss et al. ..260/429 x 73 Assignee; Mobil on Corporation 3,083,109 3/1963 Rhodes et al. ..1 17/160 X 3,147,154 9/1964 Cole etal ....117/l13 I221 May 5,1970 3,151,140 9/1964 I-lubel et al. ..260/429 21 APPL No 34 3 3,159,658 12/1964 Fischer et al. ..260/429 3,265,520 8/1966 Obenschain ..1 17/160 Related US. Application Data FOREIGN PATENTS OR APPLICATIONS [63] Continuation-impart of Ser. No. 647,222, June 19,
1967, abandon 676,894 12/1963 Canada ..117/54 1,028,408 5/1966 Great Britain ..260/429 52 us. 01. ..117/227, 106 1, 117 47 R, 1,058,679 2/1967 Great Britain 160/429 117/47 A,117/100B,117/l00A,1l7/IO0C, I 117 100 M, 117 100 5, 117/130 E, 117/13s.s R, Primary Examinerwilliam Martin 1 7 13 3 N, 1 7 3 5 1 7 1 R, 2 9 429 R, Assistant ExaminerMathew R. P. Perrone, Jr.
2 0/429 Y AttorneyFrederick E. Dumoulin, William J. Scherback, 51 Int. (:1. ..C23c 17/02 Oswald Hayes and Andrew Gaboriault [58] Field ofSearch ..117/47, 54,100,113,160,
117/130, 227; 260/429 R, 429 CY; 106/1 ABSTRACT This s ecification discloses a method for electroless de osi- [56] References cued tion 0t a metal upon a substrate. The substrate is one that l ias 21 UNITED STATES PATENTS catalytic surface capable of influencing deposition of the metal. The method involves mixing the substrate with a solu- Beer X {ion comprising a ucomplex of the metal to be deposited on 3,295,999 1/1967 Klein at 17/47 X the substrate dissolved in a nonaqueous solvent. There is also 3,402,067 9/1966 Langley 17/160 added to the solution a reducing agent such as hydrogen. The 3,415,666 12/1968 Nagai et -106/l reducing agent effects reduction of the complex thereby 3,418,346 12/1968 Parshall ..106/1 decomposing the Complex to form elemental memL The 1 3,457,089 7/1969 Shipley et a1. ..106/1 mama] meta] then deposits on the substrate 3,387,009 6/1968 Bublitz et al..... ..260/429 2,702,253 2/1955 Bergstrom ..1 17/54 20 Claims, No Drawings ELECTROLESS DEPOSITION OF METALS CROSS-REFERENCES TO RELATED APPLICATIONS This application is a continuation-in-part of our copending application, Ser. No. 647,222, filed June 19, 1967, now abandoned.
Chemical reactions catalyzed by materials prepared in accordance with this invention are disclosed and claimed in copending application, Ser. No. 672,008, filed Oct. 2, 1967, now abandoned in favor of application, Ser. No. 57,796, filed July 23, 1970. Certain products prepared inaccordance with application, Ser. No. 647,221, filed June 19, 1967, copending with said application, Ser. No. 647,222 of which the present application is a continuation-in-part as indicated above, and now abandoned in favor of a continuation-in-part application, Ser. No. 22,362 filed Mar. 24, 1970, are useful as substrates or supports in the present invention.
BACKGROUND OF THE INVENTION 1. The field of the invention comprises electroless deposition.
2. There is an increasing search for ways of coating objects which cannot be electroplated, either because they are nonconductors, like plastics, or because they are too small to attach electrodes economically, like printed circuits. For coating metals on specialized surfaces like the foregoing, electroless deposition has come to be of value, and while it is a known operation, the published literature does not show it to have been used to deposit platinum, or to deposit platinum and other metals on very finely divided substrates for the purpose of preparing catalysts and other products.
SUMMARY OF THE INVENTION DESCRIPTION OF THE SPECIFIC EMBODIMENTS The useful metal pi-complexes are broadly characterized by the presence ofa central or nuclear metal atom having bonded thereto at least one ligand in the form of an organic group containing at least one carbon-to-carbon multiple bond. By virtue of the multiple bond, which is either a double or a triple bond, the group is bonded to the metal through the pi electrons of the bond, the resulting attachment being described as a coordinate covalent bond. The sigma electrons of the multiple bond provide a carbon'to-carbon attachment described as a covalent bond. The unsaturated organic group is preferably an unsaturated hydrocarbon group, or one derived therefrom, i.e., a substituted unsaturated hydrocarbon group, and it preferably has two or more of said multiple bonds. The central metal atom is preferably platinum or palladium or other transition metal.
Usually, and as is preferred, the complex also contains one or more other ligands different from said organic group and which may be either anionic or neutral, and preferably singly charged, such as a halide ion. A specific illustrative complex is l,5-cyclooctadieneplatinurn (ll) dichloride, the structure of which may be represented as follows:
where the arrows represent coordinate covalent bonds linking the double bonds of the hydrocarbon moiety to the Pt, and the Cl atoms are connected to the Pt by covalent bonds. A convenient and illustrative way of defining the useful complexes is by means of the expression where R is the unsaturated organic group or ligand, M is the central metal atom, X is the anionic or neutral ligand described above as the other ligand, and m and n are integers.
As indicated, R is preferably an unsaturated hydrocarbon group, which may or may not be substituted by one or more substituents. Preferred unsaturated hydrocarbon groups are olefinic ligands derived from open chain diolefins having three to 24 carbon atoms, particularly unconjugated diolefins like 1,5-dienes, and including allene, butadiene, isoprene, pen tadiene, hexadiene, heptadiene, diisobutenyl, decadiene, and the like. Other preferred unsaturated hydrocarbon groups are derived from open chain olefins having more than two double bonds, some times designated oligo-olefins, such as hexatriene, 2,6-dimethyl2,4,6-octatriene, etc. Also preferred are cyclic diolefrns and cyclic oligo-olefms, particularly unconjugated compounds like l,5-cyclodienes, and including cyclobutadiene, cyclopentadiene, fulvene, norbornadiene, cyclooctadiene, dicyclopentadiene, 4-vinylcyclohexene, limonene, dipentene, cycloheptatriene, cyclooctatriene, bicyclo(2.2.2)octa-2,5,7-triene, cyclononal ,4,7-triene, cyclooctatetraene, and the like. Also useful are groups derived from heterocyclic diand oligo-olefins like heterocyclopentadiene," which is intended to refer to all five-membered ring systems in which a hetero atom like phosphorus, oxygen, iron, nickel, cobalt, etc., replaces a methylene group of cyclopentadiene. Other suitable unsaturated hydrocarbon groups are derived from the acetylenes such as the hexadiynes, heptadiynes, octadiynes, l,8-nonadiyne, 4,6-decadiyne, dodecatriyne, and the like. Unsaturated hydrocarbon groups having both double and triple bonds are of value, such as butenyne, 1,6-heptadien-3-yne, 3,6-dimethyl-2,6-octadien-4- yne, l,7-octaenyne, etc. Or a mixture of an olefinic ligand and an acetylenic ligand of the foregoing types may be suitable.
It may be seen that R, the unsaturated hydrocarbon group, may have two or more double and/or triple bonds, and may have an open chain or a cyclic structure. In some case, R may be an unsaturated cyclic or heterocyclic having one double bond, or it may be a monoolefin having two or more carbon atoms such as that derived from ethylene, styrene, and the like; or it may be a monoacetylenic acetylene group; or an aromatic ligand like benzene or phenyl. It was also indicated that R may have various substituents, and these may include alkyl, aryl, alkoxy, halogen, carboxyl, ester, keto, and the like, it being understood that, as so substituted, the resulting substituted R group is capable of pi-electron bonding to the metal atom M.
In formula (II), the atom M is a metal. Metals which can be employed are the metals of Groups VIII, lB, IVB, VB, VlB, and VIIB. The metals of Group IIIA except boron may also be employed. The metals of Group VIII are iron, cobalt, nickel, ruthenium, rhodium, palladium, osmium, iridium, and platinum. The metals of Group 18 are copper, silver, and gold, of Group IVB are titanium, zirconium, and hafnium, of VB are vanadium, niobium, and tantalum, and of WE are chromium, molybdenum, and tungsten. The metals of Group VllB are manganese and rhenium. The metals of Group IIIA, except boron, are aluminum, gallium, indium, and thallium. Particularly preferred metals are palladium, platinum, and aluminum.
Group X of formula (ll) is preferably a halidelike Cl, Br, F, and I. Other suitable groups are alkyl, acyl, amine, ammonia, acyloxy, alkyl sulfide, aryl sulfide, carbonyl, cyanide, isocyanide, hydrogen sulfide, nitrosyl, hydroxy, phosphine, thiocarbonyl, thionitrosyl, and water. Also amide, aryloxy, aroyl, aroyloxy, alkoxy, hydride, hydrogen sulfite, thiocyanate, etc.
The group R in formula (ll) is an anionic group if it loses a proton; and if no proton is lost, it is treated as a neutral group. In computing the oxidation number of the central metal atom, the group R if anionic, is counted as negative; if neutral, it is counted as having zero charge.
In general, it may be noted that the preferred ligands R and X are those that do not contaminate the metal surface, either because of their nature, such as alkoxy and acyloxy ligands, or because they pass off as gases, such as Cl and Br which pass off as l-lCl and HBr, or because they are converted under reaction conditions to compounds that do not contaminate, such as olefms and dienes which form saturated hydrocarbons.
The number of R and X ligands are denoted by the subscripts m and n; thus m may vary from I to 8, and n from 7 to 0, while their sum varies from 2 to 8. These variations, of course, are determined by the nature of the metal M and by its state of oxidation. The oxidation state of the metals as a group may range from to 8, it being understood, as a glance at the periodic table will show, that some metals exhibit more oxidation states than others. It should be remembered thatsome v ligands may have two bonds attached thereto. It will be seen that at least one R group is always present in formula (II).
When n is 0, the formula becomes R,,,M, where m may vary from 2 to 8; in complexes of this type, M is usually a metal of Group VIII or is chosen from chromium, titanium, rhenium, or vanadium. Preferred complexes are denoted by such formulas as RMX RMX RMX R MX R MX and R MX Generally, and as is preferred, the useful complexes have one central or nuclear metal atom; however, the invention also contemplates complexes having two such atoms, either the same or different, as in azulenehexacarbonyldimolybdenum, C, l-l,,Mo (CO) or in l,3-bis-(styrene)-2,4-dichloro- ,u-dichloro-diplatinum (ll), C, H, Pt- C,.,, and the complex is designated a dinuclear complex.
Some illustrative complexes may be listed as follows, and an additional list appears in example 5:
. dicyclopentadieneplatinum(ll) dichloride l,3-butadienepalladium( ll) dichloride 1,3,5-cycloheptatrieneplatinum(II) dichloride norbornadienepalladium(ll) dibromide 1,3,5 ,7-cyclooctatetraeneplatinum(ll) dichloride 2,5-dimethyl-l,5-hexadieneplatinum(ll) dichloride bis(1r-allylnickel iodide) l,5-cyclooctadienegold(lll) trichloride 9. (l,7-octadiyne)platinum(ll) dichloride A complex like No. l in the foregoing list may be prepared by adding dicyclopentadiene to Zeises acid, H(C H PtCl and refluxing for several hours, thereby to precipitate the complex. A complex like No. 2 may be prepared by using the method of Kharasch et al. JACS 60 882-4 (1938), as extended in Inorganic Synthesis Vl 218-9, which involves using palladium(ll) chloride as a starting material, reacting this with benzonitrile, and then reacting'the resulting product with 1,3- butadiene. When carbonyl groups are present, as ligands, the corresponding metal carbonyl may be used as a starting compound and reacted with a suitable olefinic material. Other methods for preparing the complexes are available.
Turning to the electroless method of depositing metal on a substrate, the desired complex is suitably dissolved in a nonaqueous solvent, the substrate is mixed with the solution and is, of course, insoluble therein, and then a reducing agent like hydrogen gas is bubbled through the mixture for a suitable period of time sufficient to reduce at least a portion of the complex to form elemental metal. Substantially all of this metal deposits on the substrate, and the resulting coated substrate comprises the product. Good stirring of the solution should be used. The following factors are considered noteworthy: the surfaces of the substrate are believed to catalyze the deposition of metal thereon; a reducing agent for the complex is present; more than a monolayer of metal is deposited on the substrate, i.e., the metal continues to deposit as long as any complex is present to be reduced; and the metal deposits only on the substrate, substantially none being deposited in the solution external to the substrate, or on the walls of the vessel, or on noncatalytic surfaces of other solids that may be present. The last factor, in particular, enhances the economics of the method as it eliminates waste of metal.
Suitable nonaqueous solvents include alkanes like hexane; aromatics like benzene (preferably thiophene-free) and toluene; halogenated alkanes and aromatics like trichloroethane, chlorobenzene, chloroform, and carbon tetrachloride; esters like methyl and ethyl acetates; ethers like dioxane and diethyl ether, ketones like acetone and methyl ethyl ketone. Of the foregoing, the chlorinated alkanes; aromatics, ketones, and ethers are preferred. Also contemplated are nitroalkanes. Other things being the same, a more volatile solvent is to be chosen as against a less volatile one in order to facilitate its removal at the end of the deposition step.
Hydrogen is the preferred reducing agent as it is not only effective but, being gaseous, does not remain in the reaction mixture. Other agents that may be used include formic acid, and alkali metal hydrides and borohydrides. Also dibenzyl, hydrazobenzene, hydroquinone, and various hydroaromatics, like cyclohexene, tetralin, 2-cyclohexene-l-one, 4-vinylcyclohexene, cyclohexadiene, and other partially saturated cycloalkenes; also p-menthadienes such as limonene, the terpenes, etc., also l,4dihydro-N-benzylnicotinamide.
In other cases, the unsaturated hydrocarbon group, R in formula (ll), may act as the reducing agent for decomposing the complex, as frequently R is a hydroaromatic moiety. Thus, in order to decompose the complex, it is heated in the presence of the solvent, and the substrate, thus depositing free metal on the substrate. The ligand X, if it is group like Cl, may react to form HCl, which under the reaction conditions can leave the reaction mixture as a gaseous product.
The substrate may be any suitable solid porous or nonporous material which provides a catalytic surface capable of influencing deposition of the metal and which, of course, is insoluble in the solution of the complex. It may have any suitable shape, ranging from a powdered or granular material to larger objects, including screens and sheet material. Desirably, the substrate is a material or object or device which, when coated with metal, forms a useful product such as a catalyst, an electronic component, a metallized plastic, etc. Quantitative deposits of metal have been obtained on substrates like platinum foil, particles of alumina having a thin layer of platinum, cation exchange resin particles having a thin palladium or platinum coating, alumina particles coated-with palladium, gold foil. If a substrate does not originally have the desired catalytic surface, such a surface may be formed by placing on it a layer of a catalytic metal like platinum or palladium, etc., as illustrated in example 3. It should be pointed out that a substrate which initially has a catalytic surface does not lose it, after metal deposition begins, as the deposited metal exercises a catalytic influence. By way of illustration, preferred substrates comprise particulate materials having a particle size in the colloid size range, which is considered to extend from 10 to about 10,000 angstrom units. Other preferred illustrative substrates may be larger, ranging from 0.5 micron to 0.25 inch in diameter. The substrates may include materials like the crystalline aluminosilicate molecular sieves; inorganic metal oxides like alumina, silica, silica-alumina, thoria, vanadia, zirconia, titania, zinc oxide, etc.; also boron nitride, pumice, silicon carbide, etc.; also cellulose and glass; and various polymers like the polyolefms, fluorinated hydrocarbon polymers, polyamides, polyesters, etc. Also suitable are ion exchange resins; and conducting materials like graphite, carbon black, powdered metals like copper and silver, fine mesh metal screens, etc.
The temperature of the electroless deposition generally varies from room, or somewhat below, to refluxing tempera tures. With normally liquid reducing agents like formic acid the temperature may range to 100 C. or more; and with some agents the temperature can go up to 200 or 300 C. or more. The temperature should not exceed the thermal decomposition point ofthe complex, which may be above 200 or 300 C. The time required for the deposition is variable and will depend, together with the temperature, on the complex and its amount, among other things; generally the time may extend over a period of several minutes to several hours. In respect of concentration of the complex in the deposition solution, it may be stated that higher concentrations favor higher deposition rates. Both lower and higher concentrations are useful to deposit small amounts of metal, but at lower concentrations less control is involved. Numerically, the concentration may vary over a wide range, going from about 0.01 percent by weight, or less, to saturation. As for the substrate concentration, there are no practical limits. The deposit may vary in thickness from one or a few monolayers, or even from an incomplete monolayer, to any desired thicker deposit. Generally, hard and smooth deposits intimately bonded to the substrate surfaces are obtainable; these may be controlled to have a bright or a rough finish. The deposits may be as complete and continuous as desired, thus providing for good electrical conductivity. In the case of porous substrates, metal is depositable on the surfaces of the internal pores.
As described, it is preferred to deposit all or substantially all of the metal on the substrate, with none being deposited in the external solution. In some cases, i.e., when hydrogen is used as reducing agent and in the presence of certain complexes made from monoolefins, such as l,3-bis-(styrene)-2,4-dichloro-p.-
dichlorodiplatinumfll); or when hydrogen is used as reducing agent and in the presence of hydroxylated solvents like alcohols or carboxylic acids, deposition of metal may take place partly on the substrate and partly in the external solution. This type of deposition may be useful for some purposes, as where it is desired to make a catalyst comprising a mixture of (1) particles comprising a metal-coated substrate, especially where the amount of coating is very low, and (2) particles of the metal per se.
It is to be understood that the metal pi-complexes described include complexes having pi-allylic ligands, as illustrated by 1rallyl-1r-cyclopentadienyl'platinum, or by dibenzene chromium.
It should also be understood that the deposition solution may contain two or more different metal pi-complexes each containing the same or a different metal. Where the deposition solution contains two or more different metal pi-complexes, the metal of each of the pi-complexes being different, the two or more different metals deposit simultaneously on the substrate. Thus, a mixture, for example, an alloy, of two or more different metals may be deposited on the substrate.
The invention may be illustrated by the following examples.
EXAMPLE 1 Zeises acid, H(C H PtCl was made by mixing for 30 minutes a solution of 3.175 g. sodium chloride in 20 ml. distilled water with a solution of 13.996 g. chloroplatinic acid in 20 ml. distilled water. The mixture was evaporated to dryness, 100 ml. absolute ethanol added, evaporated again, another 100 ml. of the alcohol added, the mixture refluxed overnight, filtered, and the filtrate diluted to 100 ml. with ethanol. Solids comprising sodium chloride were filtered off, and the remaining liquid comprised Zeises acid dissolved in alcohol.
EXAMPLE 2 A platinum pi-complex was prepared by adding ml. 1,5- cyclooctadiene to 50 ml. Zeises acid solution, as prepared in example 1, and refluxing overnight. A precipitate was formed which was filtered, washed with ethanol, washed with ether,
and dried in vacuo. A yield of 5.35 g. of 1,5-cyclooctadieneplatinum(ll) dichloride was obtained,,m.p. 293-297 C.
EXAMPLE 3 A platinum-coated alumina substrate was prepared by adding 400 g. alumina powder to a solution of 2.0 g. of the complex of example 2 in 1,500 ml. of 2-methoxyethanol; this mixture was stirred, refluxed a few minutes, then cooled, filtered, washed with chloroform and methanol, and dried in vacuo. The resulting substrate comprised particles of alumina having a thin coating of platinum in an amount of about 0.1 percent by weight.
EXAMPLE 4 The complex of example 2 was subjected to electroless deposition in the presence of the substrate of example 3 by first suspending 1.01 g. of substrate in 10 ml. benzene, adding 70 mg. complex thereto, and then bubbling hydrogen gas through the solution over a period of 1 hour. The substrate particles were then filtered, washed, and dried. About 30 mg. of platinum deposited on the substrate. The resulting mate rial, comprising platinum on alumina, was used as catalyst for the hydrogenation of l-hexyne. About 1 ml. of the latter was mixed with mg. of the catalyst and 25 ml. of dioxane, as solvent, and the mixture kept at room temperature for a period of 40 minutes under anatmosphere of hydrogen, with stirring. Thereafter, an aliquot of the mixture was analyzed by vapor phase chromatography, with the result that 92 percent conversion was observed to a mixture of 22 percent n-hexane and 70 percent l-hexene. The reaction was continued for 40 more minutes, then analyzed, and it was found that a 100 per cent conversion to nhexane was obtained.
EXAMPLE 5 Using the procedure of example 2, the following complexes were prepared (see Nos. 1 through 5 in the table below) and tested. Weighed amounts of the complexes were subjected to electroless deposition, using the substrate set forth in example 3 and trichloroethane as solvent. Hydrogen was bubbled through each solution at the same rate over a period of 60 minutes. In each case the amount of substrate was 1 g. and 10 ml. of solvent was used. At the conclusion of the tests, the amount of metal deposited on the substrate was accurately determined. The following data were obtained, including a control in which the substrate was omitted.
tion
In each starting solution, the maximum amount of platinum that could be deposited was 3.65 percent by weight; by comparison with this figure, 17.5 to 56.4 percent of the platinum was deposited. ln run Nos. 1-5, no platinum was deposited in the external solution, as demonstrated by the fact that the complex recovered from each solution contained the nondeposited platinum. In another run, uncoated alumina powder was used as substrate with the result that no platinum was deposited on it, and the complex was recovered unchanged.
EXAMPLE 6 The complex of example 2 was reduced in the presence of the coated substrate of example 3, using various reducing agents, amounts thereof, solvents, reducing times, and temperatures. The results are tabulated below as run Nos. 4 1 through 12. In each case: the amount of solvent was ml., except for Nos. 1 l and 12 where 10 and ml., respectively, were used; the weight of complex was 0.14 g., except for No. 12 where 0.05 g. was used; and the weight of alumina was 2.0 g., except that in No. 12 0.5 g. was present. Also, in each case the reducing agent was dissolved in the solvent; and the temperature was the refluxing temperature of the solution.
The metal depositions in all of these experiments were observed to occur exclusively on the substrate particles.
The resultant materials were then filtered, washed with chloroform, and dried at 1 10 C.
The products of the depositions were analyzed by electron microprobe, X-ray diffraction, and light microscopy with the following results:
The product of deposition A was found to contain a goldpalladium alloy that was about 80 percent palladium.
The product of deposition B was found to contain a goldpalladium alloy that was about 65 percent palladium.
It will be understood that in forming the deposition solution, the sequence of addition of the complex, solvent, or reducing agent, or of the substrate, is not material.
The periodic table classifications used herein are based on the arrangement distributed by E. H. Sargent & Co. and
Weight of Weight reducing Time, Temp, percent No. Reducing agent agent, gms. Solvent hrs C. platinum 1. 2-cyclohexene-1-one 6 132 0. 3
. 181 Chlorobenzene 4 132 084 Ethanol 6 78 73 12. 1,3-cyelohexadiene 16 100 1. 5
0.4 b loxanm The amount of platinum that deposited on the substrate ranged from about 8 to about 88 percent ofthe theoretical.
EXAMPLE 7 reducing agent was employed. About 0.10 g. of 4-vinyl-' cyclohexenedichloroplatinum (ll) was dissolved in 10 ml. of dioxane in the presence of 0.60 g. of the coated substrate produced in example 3. The mixture was stirred for 2 hours at refluxing temperature (100 C.), and a definite observable deposition of platinum on the substrate took place, the metal appearing black. Visual inspection of the particles at the end of the run showed a heavy coating of metal. Thus, the 4-vinylcyclohexene moiety of the complex, under the conditions of the experiment, functioned as reducing agent. When silica gel and uncoated alumina were used as substrates, no deposition occurred, indicating that their surfaces were not per se catalytic.
EXAMPLE 8 This example illustrates the electroless deposition of a goldpalladium alloy. A gold reagent solution (0) was prepared by dissolving 1.77 g. of chloroauric acid in 200 ml. chloroform at the reflux temperature. This solution was then dried by the addition of anhydrous calcium chloride. A palladium reagent solution (P) was prepared by dissolving 2.22 g. of l,5-cyclooc' tadienepalladiumfll) dichloride in 200 ml. chloroform. The substrate for deposition consisted of solid particles of a porous copolymer of styrene and divinylbenzene, which had been sulfonated and the sulfonate groups exchanged to the sodium form. Within the porous matrix of this polymer, zerovalent palladium had been incorporated in catalytic amounts (0.4 percent on a weight basis). The two reagent solutions were mixed in equal proportions, 0.5 g. of the substrate was added, and hydrogen was bubbled through the solutions at room temperature for various lengths of time. The exact proportions of solutions and reaction times are presented in the following table.
Reaction time (min) I0 further identified by the legend Copyright 1962 DynaSlide Co. 1
In the light of the foregoing description, the following is claimed.
What is claimed is:
1. Method for electrolessly depositing a metal selected from the group'consisting ofiron, cobalt, nickel, ruthenium, rhodium, palladium, osmium, iridium, platinum, copper, silver, gold, titanium; zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, manganese, rh'enium, aluminum, gallium, indium, and thalliuin on a substrate having a catalytic surface capable of influencing deposition of said metal which comprises mixing said substrate with (I a solution comprising a pi-complex of said metal dissolved in a nonaqueous solvent therefor, said mixing being at a tempera- 5 ture which does not exceed the thermal decomposition point of said complex, and with (2) a reducing agent selected from the group consisting of hydrogen, formic acid, alkali metal hydrides, alkali metal borohydrides, dibenzyl, hydrazobenzene, hydroquinone, cyclohexene, tetralin, 2- cyclohexene-l-one, 4-vinylcyclohexene, cyclohexadiene, limonene, terpenes, and l,4-dihydro-N-benzylnicotinamide, said complex having at least one ligand in the form of an organic group containing at least one carbon-to-carbon multiple bond, said group by virtue of said multiple bond being capable of pi-electron bonding to the metal of said complex, thereby decomposing said complex to form elemental metal, and depositing said elemental metal on said substrate.
2. Method of claim 1 wherein the substrate is a nonconductor of electricity.
3. Method of claim 1 wherein the substrate comprises conducting particles too small to attach electrodes.
4. Method of claim 1 wherein the complex has at least one other ligand different from said organic group.
5. Method of claim 4 wherein said other ligand is selected from halogen, carbonyl, alkyl, acyl, acyloxy, amine, ammonia, phosphine, cyanide, isocyanide, nitrosyl, alkyl sulfide, aryl sulfide, hydroxy, hydrogen sulfide, thionitrosyl, thiocarbonyl, water, hydride, amide, aryloxy, aroyl, aroyloxy, hydrogen sulfite, thiocyanate, and alkoxy.
6. Method of claim 5 wherein the number of said one ligand varies from 1 to 8 and the number of said other ligand varies from 7 to 0, while the sum of the two varies from 2 to 8.
7. Method of claim 6 wherein the number of said one ligand varies from 1 to 2, the number of said other ligand varies from 2 to 6, and the sum of the two varies from 2 to 8.
8. Method of claim 4 wherein said one ligand is derived from an open chain diolefin.
9. Method of claim 4 wherein said one ligand is derived from an open chain oligo-olefin.
10. Method of claim 4 wherein said one ligand is derived from a cyclic diolefin.
11. Method of claim 4 wherein said one ligand is derived from a cyclic oligo-olefin.
12. Method of claim 4 wherein said one ligand is derived from an acetylene.
13. Method of claim 4 wherein said solvent is a nonhydroxylic solvent and wherein substantially all of the deposited metal is deposited on the substrate.
14. Method of claim 4 wherein said reducing agent is hydrogen.
Method of claim 1 wherein said metal is palladium.
16. Method of claim 1 wherein said substrate comprises a particulate material having a particle size in the colloid size range.
17. Method of claim 1 wherein said metal is platinum.
18. Method of claim 1 wherein said metal is aluminum.
19. Method for electrolessly depositing two or more metals selected from the group consisting of iron, cobalt, nickel, ruthenium, rhodium, palladium, osmium, iridium, platinum,
copper, silver, gold, titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, manganese, rhenium, aluminum, gallium, indium, and thallium on a substrate having a catalytic surface capable of influencing deposition of said metal which comprises mixing said substrate with (l) a solution comprising a pi-complex of each of said two or more metals dissolved in a nonaqueous solvent therefor, said mixing being at a temperature which does not exceed the thermal decomposition point of said complexes, and with (2) a reducing agent selected from the group consisting of hydrogen, formic acid, alkali. metal hydrides, alkali metal borohydrides, dibenzyl, hydrazobenzene, hydroquin one, cyclohexene, tetralin, 2-cyclo hexene-l-one, 4-vinyl cyclohexene, cyclohexadiene, limonene, terpenes, and 1,4- dihydro-N-benzylnicotinamide, each of said complexes having at least one ligand in the form of an organic group containing at least one carbon-to-carbon multiple bond, said group by virtue of said multiple bond being capable of pi-electron bonding to the metal of said complex, thereby decomposing said complexes to form elemental metal, and depositing said elemental metals as a mixture on said substrate.
20. Method of claim 19 wherein said metals are gold and palladium.
UNITED STATES PATENT OFFICE CERTIFICATE OF CORRECTION Patent No 3,635,761 D t d January 18, 1972 Inventor(s) Werner O. Haag and Darrell Duavne Whitehurst It is certified that error appears in the above-identified patent and that said Letters Patent are hereby corrected as shown below:
References cited:
3,402,067 "9/1966" Langley should be -9/l968--;
"2,719,799" 10/1955 Rosenblatt et al should be --2,7l9,797--; 2,930,807 "4/1961" Case should be --3/l960--;
2,980,741 "4/1962" Zeiss et al should be "4/1961"; 3,265,520 8/1966 "Obenschain" should be --Obenshain-.
Column 2, line 52, "case" should be -cases.
Column 6, line 60, "0. 0738 tom 2.06" should be --0.0738- (under heading reading Complex go) and -2.06-- (under heading reading Pt deposit.
ed Z, by W120 Signed and sealed this 29th day of August 1972.
(SEAL) Attest;
EDWARD MTLETCITER R. ROBERT COTTSCHALK Attesting Officer Commissioner of Patents F ORM PO-IOSO (10-69) USCOMM"DC 60376-P69 U,5. GOVERNMENT PRINTING OFFICE: \969 0-365-334
Claims (19)
- 2. Method of claim 1 wherein the substrate is a nonconductor of electricity.
- 3. Method of claim 1 wherein the substrate comprises conducting particles too small to attach electrodes.
- 4. Method of claim 1 wherein the complex has at least one other ligand different from said organic group.
- 5. Method of claim 4 wherein said other ligand is selected from halogen, carbonyl, alkyl, acyl, acyloxy, amine, ammonia, phosphine, cyanide, isocyanide, nitrosyl, alkyl sulfide, aryl sulfide, hydroxy, hydrogen sulfide, thionitrosyl, thiocarbonyl, water, hydride, amide, aryloxy, aroyl, aroyloxy, hydrogen sulfite, thiocyanate, and alkoxy.
- 6. Method of claim 5 wherein the number of said one ligand varies from 1 to 8 and the number of said other ligand varies from 7 to 0, while the sum of the two varies from 2 to 8.
- 7. Method of claim 6 wherein the number of said one ligand varies from 1 to 2, the number of said other ligand varies from 2 to 6, and the sum of the two varies from 2 to 8.
- 8. Method of claim 4 wherein said one ligand is derived from an open chain diolefin.
- 9. Method of claim 4 wherein said one ligand is derived from an open chain oligo-olefin.
- 10. Method of claim 4 wherein said one ligand is derived from a cyclic diolefin.
- 11. Method of claim 4 wherein said one ligand is derived from a cyclic oligo-olefin.
- 12. Method of claim 4 wherein said one ligand is derived from an acetylene.
- 13. Method of claim 4 wherein said solvent is a nonhydroxylic solvent and wherein substantially all of the deposited metal is deposited on the substrate.
- 14. Method of claim 4 wherein said reducing agent is hydrogen.
- 15. Method of claim 1 wherein said metal is palladium.
- 16. Method of claim 1 wherein said substrate comprises a particulate material having a particle size in the colloid size range.
- 17. Method of claim 1 wherein said metal is platinum.
- 18. Method of claim 1 wherein said metal is aluminum.
- 19. Method for electrolessly depositing two or more metals selected from the group consisting of iron, cobalt, nickel, ruthenium, rhodium, palladium, osmium, iridium, platinum, copper, silver, gold, titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, manganese, rhenium, aluminum, gallium, indium, and thallium on a substrate having a catalytic surface capable of influencing deposition of said metal which comprises mixing said substrate with (1) a solution comprising a pi-complex of each of said two or more metals dissolved in a nonaqueous solvent therefor, said mixing being at a temperature which does not exceed the thermal decomposition point of said complexes, and with (2) a reducing agent selected from the group consisting of hydrogen, formic acid, alkali metal hydrides, alkali metal borohydrides, dibenzyl, hydrazobenzene, hydroquinone, cyclohexene, tetralin, 2-cyclohexene-1-one, 4-vinylcyclohexene, cyclohexadiene, limonene, terpenes, and 1,4-dihydro-N-benzylnicotinamide, each of said complexes having at least one ligand in the form of an organic group containing at least one carbon-to-carbon multiple bond, said group by virtue of said multiple bond being capable of pi-electron bonding to the metal of said complex, thereby decomposing said complexes to form elemental metal, and depositing said elemental metals as a mixture on said substrate.
- 20. Method of claim 19 wherein said metals are gold and palladium.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US3486370A | 1970-05-05 | 1970-05-05 |
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|---|---|
| US3635761A true US3635761A (en) | 1972-01-18 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US34863A Expired - Lifetime US3635761A (en) | 1970-05-05 | 1970-05-05 | Electroless deposition of metals |
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| US4264421A (en) * | 1979-05-30 | 1981-04-28 | Board Of Regents, University Of Texas System | Photocatalytic methods for preparing metallized powders |
| US4287253A (en) * | 1975-04-08 | 1981-09-01 | Photocircuits Division Of Kollmorgen Corp. | Catalytic filler for electroless metallization of hole walls |
| FR2549497A1 (en) * | 1983-07-21 | 1985-01-25 | Suisse Horlogerie Rech Lab | PROCESS FOR DEPOSITING METALS OR SEMICONDUCTORS WITHOUT CURRENT |
| US4513098A (en) * | 1983-06-28 | 1985-04-23 | Mobil Oil Corporation | Multimetallic catalysts and their method of preparation from organometallic precursors |
| US4603118A (en) * | 1983-02-04 | 1986-07-29 | Hoechst Aktiengesellschaft | Process for the preparation of a catalytically active electrode material for oxygen-consuming electrodes |
| FR2642670A1 (en) * | 1989-02-07 | 1990-08-10 | Eurecat Europ Retrait Catalys | METHOD FOR REDUCING A REFINING CATALYST BEFORE ITS IMPLEMENTATION |
| US5264288A (en) * | 1992-10-01 | 1993-11-23 | Ppg Industries, Inc. | Electroless process using silylated polyamine-noble metal complexes |
| US5340746A (en) * | 1993-01-08 | 1994-08-23 | Minnesota Mining And Manufacturing Company | Composite reactive articles for the determination of cyanide |
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| US6336962B1 (en) * | 1997-10-08 | 2002-01-08 | Atotech Deutschland Gmbh | Method and solution for producing gold coating |
| US6444008B1 (en) * | 1998-03-19 | 2002-09-03 | Cabot Corporation | Paint and coating compositions containing tantalum and/or niobium powders |
| US20090095198A1 (en) * | 2006-05-11 | 2009-04-16 | Eugenijus Norkus | Electroless deposition from non-aqueous solutions |
| US20120152147A1 (en) * | 2006-05-11 | 2012-06-21 | Eugenijus Norkus | Electroless Deposition from Non-Aqueous Solutions |
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| US11427915B2 (en) * | 2017-12-19 | 2022-08-30 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Method for metallising a porous structure made of carbon material |
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| US4130506A (en) * | 1975-07-04 | 1978-12-19 | Johnson, Matthey & Co., Limited | Metal powders |
| US4264421A (en) * | 1979-05-30 | 1981-04-28 | Board Of Regents, University Of Texas System | Photocatalytic methods for preparing metallized powders |
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| US4513098A (en) * | 1983-06-28 | 1985-04-23 | Mobil Oil Corporation | Multimetallic catalysts and their method of preparation from organometallic precursors |
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| US10975475B2 (en) * | 2019-03-06 | 2021-04-13 | C. Uyemura & Co., Ltd. | Electroless gold plating bath |
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