US3599125A - Thin film resistance attenuator - Google Patents

Thin film resistance attenuator Download PDF

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Publication number
US3599125A
US3599125A US873605A US3599125DA US3599125A US 3599125 A US3599125 A US 3599125A US 873605 A US873605 A US 873605A US 3599125D A US3599125D A US 3599125DA US 3599125 A US3599125 A US 3599125A
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reference line
material film
resistance
terminals
conductive material
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US873605A
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English (en)
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Nobuyoshi Yoshida
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NEC Corp
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Nippon Electric Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/22—Attenuating devices
    • H01P1/227—Strip line attenuators

Definitions

  • a thin film resistance attenuator comprises more than two band-shaped insulation regions or band-shaped conduction regions selectively provided therein. The lengths of these regions are adjusted whereby the characteristic impedance and attenuation value of the attenuator are independently adjusted.
  • This invention relates generally to thin film resistance attenuators and, more specifically, to a thin film resistance attenuator adapted for adjustment of both its attenuation and characteristic impedance to specific values.
  • the known or prior art resistance attenuator consists of three resistance elements connected in the formof either a T or 1r, or of four resistance elements connected in the form of a bridge. Since resistance film is now easily fabricated by virtue of recent developments in thin film technology; a resistance film attenuator having excellent high frequency characteristics in comparison with the conventional resistance attenuators will in all likelihood be widely used in the near future.
  • the resistance value of the attenuator must be precisely adjusted by a suitable process in the last stage of manufacture so as to establish the desired characteristic impedance and attenuation value. Practically, however, it is very difficult to adjust the resistance of the attenuator so as to simultaneously satisfy the characteristic impedance and attenuation value.
  • the resistance attenuator of this invention has more than two band-shaped insulation regions or band-shaped conduction regions selectively provided therein. The lengths of these insulation regions or conduction regions are adjusted whereby the characteristic impedance and attenuation value of the attenuator are independently adjusted.
  • FIGS. 1(a) through 1(d) are diagrams illustrating a'conventional thin film-resistance attenuator
  • FIG. 2 is an equivalent circuit diagram of the resistance attenuator shown in FIG. 1(a);
  • FIG. 3 is a circuitdiagram redrawn from the circuit of FIG. 2 with the center line viewed as a reference;
  • FIGS. 4(a) through 4(d) are diagrams illustrating various designs of thin filmtype resistance attenuators embodying features of the present invention.
  • FIGS. 1(a) through 1(d) illustrate examples of thin film resistance attenuators according to the prior art.
  • FIG. 1(a) shows a resistance attenuator consisting of a pair of input terminals 13, a pair of output terminals 2-3, and a resistance film 4.
  • FIGS. 1(a) and 1(d) are diagrams of resistance attenuators in which the resistance film are respectively triangular and rhombic in shape.
  • the terminals and electrodes of these resistance attenuators of FIGS. 1(0) and 1(a) are arranged in the same manner as in the resistance attenuator of FIG. 1(a).
  • FIG. 1(b) shows a resistance attenuator of the balanced circuit network type, having a pair of input terminals I-1' and a pair of output terminals 2-2. Four portions indicated by hatching represent the electrodes connected to these terminals.
  • FIGS. 1(a) through 1(d) The prior art attenuators of the type shown in FIGS. 1(a) through 1(d) are described in several published reports such as Synthesis of Multiple Resistance Networks from Single Resistive Films by R. 1. Dow, IEEE Transaction; Component Parts Vol. CP-lO of Dec. 1963, pp. l47-l55; Functional Tantalum Thin-Film Resistive Networks and Decoders by W. Worobey and R. W. Wyndrum, Jr., IEEE Transaction, Parts, Materials and Packaging Vol, PMP-4 of Mar. 1968, pp. 22- 29; and Triangular, Rhombic, and Distributed Resistance Networks and their Applications by S. C. Lee, IEEE Transaction, Parts, Materials and Packaging Vol. PMP-4 of June 1968, pp. 4l-50.
  • the film resistance attenuator shown in FIG. 1(a) is a socalled symmetrical-type resistance attenuator in which the characteristic impedance on the input side is equal to that on the output side.
  • This resistance attenuator can be expressed generally by the equivalent circuit of FIG. 2, wherein it is known that the resistance values of the resistors 10, 1 l, 12 and 13 are uniquely determined when the values of the characteristic impedance and attenuation are given.
  • the terminal numbers in FIG. 2 correspond to the numbers in FIG. 1(a).
  • the current distribution in the operating condition is symmetrical with respect to the centerline CL of the figure.
  • This centerline CL is a straight line being equally distant from the electrode of terminal 1 and from the electrode of terminal 2, and perpendicular to the electrode of terminal 3.
  • the resistive value between terminals 1 and 2 depends on the conductivity of the resistance film of the portion of centerline CL. In other words, the value of resistance between terminals 1 and 2 is changed if the resistance film of the portion of centerline CL, or a conductive film is placed in the portion in place of the resistance film.
  • the resistance value between terminals 1 and 2 is influenced by the resistances between the terminals 21 and 22 and between the terminals 23 and 24.
  • the value of resistance between terminals 1 and 2 is 2R,R /(2R +R,) and is not dependent upon R, (where R is the resistance value of resistor 12).
  • R is the resistance value of resistor 12.
  • FIG. 4(a) shows one embodiment of a thin film resistance attenuator of the present invention.
  • This resistance attenuator is of the unbalanced type, having terminals 1, 2 and 3, thereby to form a pair of input terminals 1-3 and a pair of output terminals 2-3.
  • Three band-shaped insulation regions 5, 6 and 7 are formed in a part of the resistance film 4 having a substantially uniform resistance per unit area.
  • This resistance attenuator is the same as the conventional resistance film attenuator, except for these three insulation regions.
  • the bandshaped insulation region is not initially provided but rather is formed in the adjusting process which occurs during the last stage of manufacture. By forming this insulation region, it is possible to independently trim the attenuation and characteristic impedance of the resistance attenuator to their desired values.
  • the resistance value between terminal 3 and the terminal formed by short circuiting terminals 1 and 2 is measured in the condition wherein the band-shaped insulation region is not as yet provided. As will be obvious from FIG. 2, this resistance value must be R +R 2. Generally, however, the resistance attenuator is manufactured with a smaller value of resistance than R +R /2. To make the resistance value equal to R +R /2, band-shaped insulation regions and 6 are formed to increase the resistance to the desired value. This process is carried out while measuring the resistance value between terminal 3 and the terminal formed by short circuiting terminals 1 and 2. Practically, the band-shaped insulation regions 5 and 6 are started from the edge of the resistance film 4; the band-shaped insulation region 5 is then extended gradually toward the right, and insulation region 6 toward the left. These insulation regions may be formed, for example, by mechanically destroying the thin film resistance body.
  • the band-shaped insulation regions 5 and 6 are formed so that the resistance value between terminals 1 and 3 is equal to the value of resistance between terminals 2 and 3. For forming these insulation regions, therefore, it is necessary to employ means for either intermittently or continually monitoring these values.
  • the resistance value between terminals 1 and 2 is then measured. As is obvious from FIG. 2, this resistance value must be 2R R /(2R +R,). In general, however, the resistance value is smaller than 2R,R 2R +R,) during the manufacturing process even after forming the band-shaped insulation regions 5 and 6. To make the resistance value equal to 2R,R /(2R +R the band-shaped insulation region 7 is formed, thereby to increase the resistance value between terminals 1 and 2 to the desired value. This process is done while measuring the resistance value between terminals 1 and2. The insulation region 7 is started from the edge of the thin film resistance body, and is extended gradually toward the lower direction.
  • the thin film type resistance attenuator having the insulation regions 5, 6 and 7 is a resistance attenuator which simultaneously satisfies the desired values of characteristic impedance and attenuation.
  • the thin film type resistance attenuator of FIG. 1(a) has already been described above. Similarly, in the attenuators shown in FIGS. 1(b), 1(a) and 1(d), the resistance value can be trimmed to simultaneously satisfy the characteristic impedance and the amount of attenuation by forming similar band-shaped insulation regions.
  • FIGS. 4(b), 4(0) and 4(d) show examples of film resistance attenuators having band-shaped insulation regions similar to those shown in FIG. 4(a) as incorporated in the resistance attenuators of FIGS. 1(b), 1(0) and 1(d), respectively.
  • the resistance value between terminals 1 and 2 or terminals l and 2' and the other resistance value between a terminal formed by short circuiting terminals 1 and 2 and another terminal formed by short circuiting terminals I and 2' can be independently adjusted.
  • the band-shaped insulation regions 5 and 6 shown in FIG. 4(a) are formed in the boundary between electrode 3 and the thin film resistance body. Needless to say, these insulation regions may not be located in the boundary; for example, the
  • band-shaped insulation region 5 may be disposed between the electrode connected to terminal 1 and the resistance film; and the band-shaped insulation region 6 may be disposed between the electrode of terminal 2 and resistance film 4. Furthermore, these insulation regions may be located not only between the electrode and the boundary, but also on the thin film resistance body.
  • the band-shaped insulation region 7 must be on the centerline CL and may not be started from the edge of the thin film resistance body.
  • the thin film type resistance attenuators of FIGS. 4(b), 4(a) and 4(d) may be modified in the same manner as above.
  • a band-shaped .insulation region is formed on the resistance film of a thin film resistance attenuator and the resistance value is increased and then trimmed.
  • a band-shaped condition region may be formed by applying conductive paste at the position of the band-shaped insulation region, thereby to lower the resistance value for purposes of trimming.
  • a thin film resistance attenuator comprising a thin film of resistive material substantially fiat in shape and divided into first and second areas symmetrical with respect to a reference line
  • first, second and third strips lying in said first and second resistive material film areas respectively, said first, second and third strips each having a resistivity different from the rest of said resistive material film and having lengths respectively adjusted to independently provide a desired resistance value between said first and second terminals and another resistance value between a terminal formed by short circuiting said first and second terminals and said third terminal, whereby a desired characteristic impedance and attenuation value of said resistance attenuator are obtained.
  • a thin film resistance attenuator comprising a thin film of resistive material substantially flat in shape nd divided into first and second areas symmetrical with respect to a reference line,
  • said first and second pairs of strips each having a resistivity different from the rest of said resistive material film and having lengths respectively adjusted to independently provide a desired resistance value between said first and second terminals or said third and fourth terminals, and another resistance value between a terminal formed by short circuiting said first and second terminals and another terminal formed by short circuiting said third and fourth terminals, whereby desired characteristic impedance and attenuation value of said resistance attenuator area obtained.

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US873605A 1968-11-04 1969-11-03 Thin film resistance attenuator Expired - Lifetime US3599125A (en)

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JP43080842A JPS499570B1 (enrdf_load_stackoverflow) 1968-11-04 1968-11-04

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US3599125A true US3599125A (en) 1971-08-10

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3680013A (en) * 1970-02-27 1972-07-25 Welwyn Electric Ltd Film attenuator
JPS4871859A (enrdf_load_stackoverflow) * 1971-12-27 1973-09-28
US4216444A (en) * 1977-09-16 1980-08-05 Thomson-Csf Step adjustable attenuator
US4965538A (en) * 1989-02-22 1990-10-23 Solitron Devices, Inc. Microwave attenuator
US5986516A (en) * 1997-12-29 1999-11-16 Emc Technology Llc Chip attenuator having a capacitor therein
US20090015355A1 (en) * 2007-07-12 2009-01-15 Endwave Corporation Compensated attenuator

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3172074A (en) * 1961-07-17 1965-03-02 Weston Instruments Inc Electrical resistors
US3260971A (en) * 1964-12-03 1966-07-12 Weinschel Eng Co Inc Multi-layer card attenuator for microwave frequencies
US3266005A (en) * 1964-04-15 1966-08-09 Western Electric Co Apertured thin-film circuit components
US3368103A (en) * 1964-05-20 1968-02-06 Rca Corp Resistor comprising spaced metal coatings on a resistive layer and traveling wave tube utilizing the same
US3380156A (en) * 1965-11-15 1968-04-30 Trw Inc Method of fabricating thin film resistors
US3521201A (en) * 1968-11-01 1970-07-21 Hewlett Packard Co Coaxial attenuator having at least two regions of resistive material

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3172074A (en) * 1961-07-17 1965-03-02 Weston Instruments Inc Electrical resistors
US3266005A (en) * 1964-04-15 1966-08-09 Western Electric Co Apertured thin-film circuit components
US3368103A (en) * 1964-05-20 1968-02-06 Rca Corp Resistor comprising spaced metal coatings on a resistive layer and traveling wave tube utilizing the same
US3260971A (en) * 1964-12-03 1966-07-12 Weinschel Eng Co Inc Multi-layer card attenuator for microwave frequencies
US3380156A (en) * 1965-11-15 1968-04-30 Trw Inc Method of fabricating thin film resistors
US3521201A (en) * 1968-11-01 1970-07-21 Hewlett Packard Co Coaxial attenuator having at least two regions of resistive material

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3680013A (en) * 1970-02-27 1972-07-25 Welwyn Electric Ltd Film attenuator
JPS4871859A (enrdf_load_stackoverflow) * 1971-12-27 1973-09-28
US4216444A (en) * 1977-09-16 1980-08-05 Thomson-Csf Step adjustable attenuator
US4965538A (en) * 1989-02-22 1990-10-23 Solitron Devices, Inc. Microwave attenuator
US5986516A (en) * 1997-12-29 1999-11-16 Emc Technology Llc Chip attenuator having a capacitor therein
US20090015355A1 (en) * 2007-07-12 2009-01-15 Endwave Corporation Compensated attenuator

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JPS499570B1 (enrdf_load_stackoverflow) 1974-03-05

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