US3549412A - Metal plating particulated substrates - Google Patents
Metal plating particulated substrates Download PDFInfo
- Publication number
- US3549412A US3549412A US725119A US3549412DA US3549412A US 3549412 A US3549412 A US 3549412A US 725119 A US725119 A US 725119A US 3549412D A US3549412D A US 3549412DA US 3549412 A US3549412 A US 3549412A
- Authority
- US
- United States
- Prior art keywords
- plating
- substrate
- slurry
- compound
- solvent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000007747 plating Methods 0.000 title description 60
- 239000000758 substrate Substances 0.000 title description 58
- 229910052751 metal Inorganic materials 0.000 title description 35
- 239000002184 metal Substances 0.000 title description 35
- 238000000034 method Methods 0.000 description 51
- 239000002904 solvent Substances 0.000 description 47
- 239000002002 slurry Substances 0.000 description 45
- 150000001875 compounds Chemical class 0.000 description 32
- 150000002736 metal compounds Chemical class 0.000 description 27
- 238000000576 coating method Methods 0.000 description 21
- 239000011248 coating agent Substances 0.000 description 17
- 239000000843 powder Substances 0.000 description 13
- 238000000354 decomposition reaction Methods 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 12
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 9
- -1 aluminum compound Chemical class 0.000 description 9
- 229910000086 alane Inorganic materials 0.000 description 8
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical compound [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 238000002156 mixing Methods 0.000 description 7
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
- SIPUZPBQZHNSDW-UHFFFAOYSA-N bis(2-methylpropyl)aluminum Chemical compound CC(C)C[Al]CC(C)C SIPUZPBQZHNSDW-UHFFFAOYSA-N 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- MCULRUJILOGHCJ-UHFFFAOYSA-N triisobutylaluminium Chemical compound CC(C)C[Al](CC(C)C)CC(C)C MCULRUJILOGHCJ-UHFFFAOYSA-N 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 230000001276 controlling effect Effects 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 239000006247 magnetic powder Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000010992 reflux Methods 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 238000006555 catalytic reaction Methods 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 239000003365 glass fiber Substances 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 229910052987 metal hydride Inorganic materials 0.000 description 3
- 150000004681 metal hydrides Chemical class 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 239000008188 pellet Substances 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- GLGNXYJARSMNGJ-VKTIVEEGSA-N (1s,2s,3r,4r)-3-[[5-chloro-2-[(1-ethyl-6-methoxy-2-oxo-4,5-dihydro-3h-1-benzazepin-7-yl)amino]pyrimidin-4-yl]amino]bicyclo[2.2.1]hept-5-ene-2-carboxamide Chemical compound CCN1C(=O)CCCC2=C(OC)C(NC=3N=C(C(=CN=3)Cl)N[C@H]3[C@H]([C@@]4([H])C[C@@]3(C=C4)[H])C(N)=O)=CC=C21 GLGNXYJARSMNGJ-VKTIVEEGSA-N 0.000 description 2
- APQSQLNWAIULLK-UHFFFAOYSA-N 1,4-dimethylnaphthalene Chemical compound C1=CC=C2C(C)=CC=C(C)C2=C1 APQSQLNWAIULLK-UHFFFAOYSA-N 0.000 description 2
- YQZBFMJOASEONC-UHFFFAOYSA-N 1-Methyl-2-propylbenzene Chemical compound CCCC1=CC=CC=C1C YQZBFMJOASEONC-UHFFFAOYSA-N 0.000 description 2
- JRLPEMVDPFPYPJ-UHFFFAOYSA-N 1-ethyl-4-methylbenzene Chemical compound CCC1=CC=C(C)C=C1 JRLPEMVDPFPYPJ-UHFFFAOYSA-N 0.000 description 2
- QPUYECUOLPXSFR-UHFFFAOYSA-N 1-methylnaphthalene Chemical compound C1=CC=C2C(C)=CC=CC2=C1 QPUYECUOLPXSFR-UHFFFAOYSA-N 0.000 description 2
- QIMMUPPBPVKWKM-UHFFFAOYSA-N 2-methylnaphthalene Chemical compound C1=CC=CC2=CC(C)=CC=C21 QIMMUPPBPVKWKM-UHFFFAOYSA-N 0.000 description 2
- ZLCSFXXPPANWQY-UHFFFAOYSA-N 3-ethyltoluene Chemical compound CCC1=CC=CC(C)=C1 ZLCSFXXPPANWQY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910000531 Co alloy Inorganic materials 0.000 description 2
- RGSFGYAAUTVSQA-UHFFFAOYSA-N Cyclopentane Chemical compound C1CCCC1 RGSFGYAAUTVSQA-UHFFFAOYSA-N 0.000 description 2
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- QVYYOKWPCQYKEY-UHFFFAOYSA-N [Fe].[Co] Chemical compound [Fe].[Co] QVYYOKWPCQYKEY-UHFFFAOYSA-N 0.000 description 2
- 238000013019 agitation Methods 0.000 description 2
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000005056 compaction Methods 0.000 description 2
- 229940125758 compound 15 Drugs 0.000 description 2
- RWGFKTVRMDUZSP-UHFFFAOYSA-N cumene Chemical compound CC(C)C1=CC=CC=C1 RWGFKTVRMDUZSP-UHFFFAOYSA-N 0.000 description 2
- NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- HJXBDPDUCXORKZ-UHFFFAOYSA-N diethylalumane Chemical compound CC[AlH]CC HJXBDPDUCXORKZ-UHFFFAOYSA-N 0.000 description 2
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002170 ethers Chemical class 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- ODLMAHJVESYWTB-UHFFFAOYSA-N propylbenzene Chemical compound CCCC1=CC=CC=C1 ODLMAHJVESYWTB-UHFFFAOYSA-N 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- MRMOZBOQVYRSEM-UHFFFAOYSA-N tetraethyllead Chemical compound CC[Pb](CC)(CC)CC MRMOZBOQVYRSEM-UHFFFAOYSA-N 0.000 description 2
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 description 2
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- HGTUJZTUQFXBIH-UHFFFAOYSA-N (2,3-dimethyl-3-phenylbutan-2-yl)benzene Chemical compound C=1C=CC=CC=1C(C)(C)C(C)(C)C1=CC=CC=C1 HGTUJZTUQFXBIH-UHFFFAOYSA-N 0.000 description 1
- LZDKZFUFMNSQCJ-UHFFFAOYSA-N 1,2-diethoxyethane Chemical compound CCOCCOCC LZDKZFUFMNSQCJ-UHFFFAOYSA-N 0.000 description 1
- LEEANUDEDHYDTG-UHFFFAOYSA-N 1,2-dimethoxypropane Chemical compound COCC(C)OC LEEANUDEDHYDTG-UHFFFAOYSA-N 0.000 description 1
- 239000005967 1,4-Dimethylnaphthalene Substances 0.000 description 1
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 1
- ANHQLUBMNSSPBV-UHFFFAOYSA-N 4h-pyrido[3,2-b][1,4]oxazin-3-one Chemical group C1=CN=C2NC(=O)COC2=C1 ANHQLUBMNSSPBV-UHFFFAOYSA-N 0.000 description 1
- XPVATDCOZDHQNL-UHFFFAOYSA-N CC(C)(C)[Mg]C(C)(C)C Chemical compound CC(C)(C)[Mg]C(C)(C)C XPVATDCOZDHQNL-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical group O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 1
- 229910000978 Pb alloy Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- JBCJJENNWZWMGZ-UHFFFAOYSA-N [Cr].CC(C)c1ccccc1 Chemical compound [Cr].CC(C)c1ccccc1 JBCJJENNWZWMGZ-UHFFFAOYSA-N 0.000 description 1
- DEIHRWXJCZMTHF-UHFFFAOYSA-N [Mn].[CH]1C=CC=C1 Chemical compound [Mn].[CH]1C=CC=C1 DEIHRWXJCZMTHF-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 125000002877 alkyl aryl group Chemical group 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- 150000005840 aryl radicals Chemical class 0.000 description 1
- HVURSIGIEONDKB-UHFFFAOYSA-N benzene;chromium Chemical compound [Cr].C1=CC=CC=C1.C1=CC=CC=C1 HVURSIGIEONDKB-UHFFFAOYSA-N 0.000 description 1
- KXKURNTZDRVLAJ-UHFFFAOYSA-N benzene;molybdenum Chemical compound [Mo].C1=CC=CC=C1.C1=CC=CC=C1 KXKURNTZDRVLAJ-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- UJYLYGDHTIVYRI-UHFFFAOYSA-N cadmium(2+);ethane Chemical compound [Cd+2].[CH2-]C.[CH2-]C UJYLYGDHTIVYRI-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- HMVHCCLPJMNMFZ-UHFFFAOYSA-N carbon monoxide chromium(5+) cyclopenta-1,3-diene Chemical group [Cr+5].[C-]#[O+].[C-]#[O+].[C-]#[O+].c1cc[cH-]c1 HMVHCCLPJMNMFZ-UHFFFAOYSA-N 0.000 description 1
- CVCSGXJPONFHRC-UHFFFAOYSA-N carbon monoxide;cobalt;nitroxyl anion Chemical group [Co].[O+]#[C-].[O+]#[C-].[O+]#[C-].O=[N-] CVCSGXJPONFHRC-UHFFFAOYSA-N 0.000 description 1
- FQNHWXHRAUXLFU-UHFFFAOYSA-N carbon monoxide;tungsten Chemical group [W].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] FQNHWXHRAUXLFU-UHFFFAOYSA-N 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 150000001924 cycloalkanes Chemical class 0.000 description 1
- LCGVCXIFXLGLHG-UHFFFAOYSA-N cyclopenta-1,3-diene;manganese(2+) Chemical compound [Mn+2].C1C=CC=[C-]1.C1C=CC=[C-]1 LCGVCXIFXLGLHG-UHFFFAOYSA-N 0.000 description 1
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 description 1
- DIOQZVSQGTUSAI-NJFSPNSNSA-N decane Chemical compound CCCCCCCCC[14CH3] DIOQZVSQGTUSAI-NJFSPNSNSA-N 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- BXVLQFGQYHYURU-UHFFFAOYSA-N diethyltin Chemical compound CC[Sn]CC BXVLQFGQYHYURU-UHFFFAOYSA-N 0.000 description 1
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- POLCUAVZOMRGSN-UHFFFAOYSA-N dipropyl ether Chemical compound CCCOCCC POLCUAVZOMRGSN-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
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- 239000011521 glass Substances 0.000 description 1
- DMEGYFMYUHOHGS-UHFFFAOYSA-N heptamethylene Natural products C1CCCCCC1 DMEGYFMYUHOHGS-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
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- 239000011261 inert gas Substances 0.000 description 1
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- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- DLPASUVGCQPFFO-UHFFFAOYSA-N magnesium;ethane Chemical compound [Mg+2].[CH2-]C.[CH2-]C DLPASUVGCQPFFO-UHFFFAOYSA-N 0.000 description 1
- 229910001004 magnetic alloy Inorganic materials 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 1
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 1
- GQKZBCPTCWJTAS-UHFFFAOYSA-N methoxymethylbenzene Chemical compound COCC1=CC=CC=C1 GQKZBCPTCWJTAS-UHFFFAOYSA-N 0.000 description 1
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- DIOQZVSQGTUSAI-UHFFFAOYSA-N n-butylhexane Natural products CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- WSGCRAOTEDLMFQ-UHFFFAOYSA-N nonan-5-one Chemical compound CCCCC(=O)CCCC WSGCRAOTEDLMFQ-UHFFFAOYSA-N 0.000 description 1
- ZCYXXKJEDCHMGH-UHFFFAOYSA-N nonane Chemical compound CCCC[CH]CCCC ZCYXXKJEDCHMGH-UHFFFAOYSA-N 0.000 description 1
- BKIMMITUMNQMOS-UHFFFAOYSA-N normal nonane Natural products CCCCCCCCC BKIMMITUMNQMOS-UHFFFAOYSA-N 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000003209 petroleum derivative Substances 0.000 description 1
- 150000003003 phosphines Chemical class 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- KXCAEQNNTZANTK-UHFFFAOYSA-N stannane Chemical compound [SnH4] KXCAEQNNTZANTK-UHFFFAOYSA-N 0.000 description 1
- 229910000080 stannane Inorganic materials 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- RWWNQEOPUOCKGR-UHFFFAOYSA-N tetraethyltin Chemical compound CC[Sn](CC)(CC)CC RWWNQEOPUOCKGR-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- LALRXNPLTWZJIJ-UHFFFAOYSA-N triethylborane Chemical compound CCB(CC)CC LALRXNPLTWZJIJ-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
Definitions
- Solution plating as practiced in the art today generally comprises immersion of a hot substrate in a solution of a heat-decomposable metal compound.
- solution plating employing heat-decomposable metal compounds to prepare high purity coatings.
- corrosion or oxidation of the substrate is greatly minimized both before and during the coating operation.
- Another chief advantage of solution plating is its simplicity and the economical attractiveness of the high utilization of the heat-decomposable metal compound which generally represents a significant portion of the cost of metal plating utilizing such materials.
- a serious limitation of solution plating is its lack of suitability for plating substrates characterized by having a high heat trans'fer rate or low heat capacity, for example, see US.
- An object of this invention is to provide a low temperature solution plating process whereby substrates having a high coeflicient of heat transfer can be readily plated.
- Another object of this invention is to provide a low temperature solution plating process for plating substrates having special physical properties which would be impaired at high temperatures.
- Yet another object of this invention is to provide a solution plating process utilizing a heat-decomposable metal compound whereby more efficient utilization of the compound is realized.
- the present invention provides a process for metal plating a particulated substrate, said process comprising in combination preparing a slurry of said particulated sub strate in a thermally stable organic solvent essentially inert under process conditions and capable of dissolving a heatdecomposable metal compound selected from the group consisting o'f triisobutylaluminum, diisobutylaluminum hydride, trimethylamine alane, bis(trimethylamine) alane, triethylamine alane, diethylaluminum hydride, and triethylaluminum, heating the prepared slurry in a system under substantially inert conditions to at least the decomposition temperature of said heat-decomposable metal compound, and introducing said heat-decomposable metal compound into the heated prepared slurry.
- a heatdecomposable metal compound selected from the group consisting o'f triisobutylaluminum, diisobutylaluminum hydride, trimethylamine
- the present invention provides a process for metal plating a particulated substrate comprising preparing a slurry of the particulated substrate in a solvent capable of dissolving a heat-decomposable metal compound, heating the substrate-solvent slurry in a system under inert conditions to at least the decomposition temperature of the heat-decomposable metal compound, and incrementally introducing the heat-decomposable metal compound into the heated substrate-solvent slurry while continuously agitating the slurry.
- the particulated substrate is expeditiously coated at a high degree of efficiency.
- the plating compound By incremental addition of the plating compound to the substrate-solvent slurry is meant addition at a rate sulficient to avoid excessive build up in concentration in the slurry, that is, opposed to a system where all of the plating compound is added initially.
- the heat-decomposable metal plating compound is preferably added to the particulated powder-substrate slurry at a rate sufficient to decompose the compound almost essentially instantaneously upon contact with the slurry.
- it can best be described as dripping the plating compound into the slurry.
- the compound can be added in large volumes and on a continuous basis.
- Addition of the plating compound to the slurry is regulated depending upon the ratio of substrate to solvent present, the mixing speed (that is, the rapidity at which each individual substrate member is brought into position and exposed to the plating compound), and the selected temperature for decomposing the plating compound.
- the thermal decomposition of heat-decomposable metal compounds in the above manner is primarily a surface catalyzed reaction such that decomposition proceeds at a temperature reduced below that normally required for decomposition of the specific heat-decomposable compound at the particulated substrate surface whereby a continuous, adherent, coherent coating is realized thereon.
- a surface catalyzed reaction By controlling the process to effect a surface catalyzed reaction, deposition on non-substrate surfaces, such as the walls of a container, or in the solvent to produce free aluminum particles, is avoided.
- Solvents having a boiling point greater than the normal decomposition temperature of the heatdecomposable metal compound can be used in an appplication where some solvent decomposition of the metal compound can be tolerated, for example in the coating of magnetic powders which are subsequently compactedinto a specific geometry, the main function of the coating being to serve as a binder so that some free metal can be tolerated. Reflux conditions are preferred since by continually cooling the solvent vapors and returning them to the slurry, the temperature of the substrate-solvent slurry is conveniently regulated.
- the particulated substrate-solvent slurry contained in the vessel 11 is heated by heating means 12 and continually stirred or agitated by suitable means, such as the mixing means 13.
- suitable means such as the mixing means 13.
- the plating compound 15 is then incrementally added via the conduit means 16 to the substrate-solvent slurry by regulation of the valve means 17.
- the plating compound is preferably brought into contact with the substrate-solvent slurry 10 in the close vicinity of the mixing means 13, e.g. in the vortex created thereby. This procedure insures rapid and efficient contact between the substrate and the plating compound.
- the plating compound 15 can be introduced directly within the substratesolvent slurry itself by immersing the conduit means 16 therein.
- the substrate-solvent slurry 10 can be agitated by an inert gas introduced beneath the surface thereof and which gas can include vapors of the selected heat-decomposable metal compound.
- automated components can be employed in the system and the operation conducted on a continuous basis.
- the instant process is not limited by any particular size or geometry of substrate as long as it is capable of being mixed with a solvent to form a slurry. Moreover, the substrate must be capable of withstanding the requisite temperature to decompose the heat-decomposable metal compound, the only restriction being that it must be compatible with the solvent.
- Substrates employed herein can best be described as particulated materials, e.g. powders, pellets, small fasteners, and the like. Such finely comminuted materials are generally characterized as having a high heat transfer rate to the extent that they cannot be readily plated, if at all, by conventional solution plating techniques.
- Particulated metals, metal alloys, oxides, and carbides are especially preferred since these materials, heretofore difiicult to plate by conventional solution plating, are characterized by their excellent heat stability, plus the fact that unique articles of manufacture as hereinafter described are readily produced by way of the present process.
- other particulated materials such as glass, ceramics, refractories, graphite, etc., can likewise be employed.
- the present process provides efficient plating of such substrates at low temperatures regardless of their particular size or configuration as long as they can be slurried.
- the instant process is, however, particularly attractive for coating particulated substrates having an average particle size less than about mils, especially less than about 30 mils.
- a preferred embodiment of the instant invention comprises utilizing as a particulated substrate a magnetic metal powder having an average particle size less than about 1 micron, e.g. fine particle magnets comprising an iron-cobalt alloy which materials cannot be heated above 200 C. for extended periods of time without losing their special magnetic properties.
- a magnetic metal powder having an average particle size less than about 1 micron, e.g. fine particle magnets comprising an iron-cobalt alloy which materials cannot be heated above 200 C. for extended periods of time without losing their special magnetic properties.
- Such materials when coated by the instant process utilizing a heat-decomposable aluminum compound and dispersed in a non-magnetic matrix (e.g. aluminum) can be formed into a high coercive force permanent magnet.
- Preferred heat-decomposable plating compounds are (A) metal hydrides and their complexes having the fol lowing formulas:
- R M wherein is an alkyl, aryl, arene, cyclopentadienyl, cyclopentadrene, alkaryl, or aralkyl radical, M is a metal astom, and m is a small whole integer ranging from 1 to and
- R MX wherein R and M are defined as above and X is selected from the group consisting of carbonyls, nitrosyls, phosphines, and mixtures thereof, and m and y are small whole integers ranging from 1 to 4, and
- Suitable compounds are: silane, stannane, diethylaluminum hydride, diisobutylaluminum hydride, trimethylaminegallane, tertiary amine alanes including trimethylaminealane, bis(trimethylamine)alane, triethylaminealane, triisopropylaminealane, tri-n-butylaminealane, and tri-sec-butylaminealane, diisobutylberyllium, di-tert-butylberyllium, diethylmagnesium, di-tertbutylmagnesium, diethylzinc, diethylcadmium, triethylborane, triethylaluminum, triisobutylaluminum, diethyltin, tetraethyltin, tetraethyllead, dibenzene chromium, dimesitylene chromium, dibenzene moly
- Metals which can comprise the metal constituent of the metal compounds to be employed in this invention are, in general, any metals of Groups II-A through V-A of the Periodic Chart of the Elements (Fisher Scientific Company, 1955).
- heat-decomposable metal compounds containing the following metals are preferred: Beryllium, titanium, zirconium, niobium, tantalum, chromium, molybdenum, tungsten, cobalt, nickel, copper, zinc, cadmium, aluminum, tin, and lead.
- Aluminum is an especially preferred metal for coating the preferred particulated substrates because it can be readily deposited, it is very soft and ductile and thereby amenable to powder metallurgical techniques, and exhibits good corrosion and high temperature oxidation resistance.
- the heat-decomposable aluminum compounds the most preferred are triisobutylaluminum, diisobutylaluminum hydride, and trimethylamine alane.
- the organometallic compounds employed herein are generally decomposed at a temperature within the range of from about 100 C. to about 500 C., quite often even below 300 C.
- the preferred organoaluminum compounds triisobutylaluminum and diisobutylaluminum hydride are preferably decomposed at a temperature within the range of from about 175 C. to about 220 C.
- Trimethylamine alane is generally decomposed at a temperature of from about 100 C. to about 200 0., especially within about 120 C. to about 160 C.
- the solvents which can be employed in the novel process of this invention are those thermally stable solvents which are essentially inert under the process conditions. Generally, organic solvents having up to about 18 carbon atoms are preferred since they are more economical, being readily available while offering many desirable features such as enumerated below. By thermal stability it is meant that the solvent must not decompose to carbon containing solid residues at the temperature required for the plating operation.
- the solvent should also be essentially inert and compatible with the plating compound so as to avoid any reaction leading to a loss of plating compound. Additionally the solvent should also be compatible with the coating effected and the particulated substrate being coated.
- hydrocarbon sol- Vents such as: Alkanes, aromatics, cycloalkanes, fused ring aromatics, and the like.
- Ethers such as the alkyl ethers, glycol ethers, polyaromatic ethers, and such, can also be used.
- Typical of other solvents which can be employed in certain specific instances are the fluorocarbons, silicone oils, alcohols, ketones, and the like. From a cost-effectiveness standpoint, aromatic hydrocarbon solvents are preferred for use in this invention, such as: toluene, xylene, mesitylene, decalene, and the like.
- Suitable solvents are kerosene, Primol- D (an essentially aliphatic hydrocarbon solvent), hexane, benzene, toluene, xylene, alpha-methylnaphthalene, betamethylnaphthalene, 1,4-dimethylnaphthalene, decahydronaphthalene, 1-ethyl-3-methylbenzene, 1-ethyl-4-methylbenzene, isopropylbenzene, alpha-methoxy toluene, 1- methyl-2-propylbenzene, l-methyl 3 propylbenzene, lmethyl-4-propylbenzene, 1,2,3,4 tetrahydronaphthalene, pentane, heptane, decane, nonane, octane, cyclopentane, cyclohexane, methylcyclohexane, polymethylsiloxane, methylethylketone, di
- the heating means 12 consisted of an electric resistance heater.
- a conventional electrically driven mixer was employed as the mixing means 13.
- the slurry 10 consisting of the particulated substrate and solvent was charged into the vessel 11 which had been previously purged with nitrogen through line 24 to rid the system of air and moisture.
- the startup procedure comprised first heating the slurry 10 so as to distill off a small amount of solvent and co-distill any traces of moisture which was allowed to escape from the vessel 11 through the line 22 to the bubbler means 20.
- the condenser means 19 was set into operation by opening the valve means 26 which allowed cooling fluid to move through the means 19.
- the mixing means 13 was set into operation and the heater means 12 adjusted so as to heat the slurry 10 to the temperature employed for decomposing the particular heat-decomposable metal compound employed in each specific instance enumerated below.
- the temperature indicating means 14 the operator could observe and regulate the temperature during the plating operation.
- the pressure gauge 21 read essentially atmospheric pressure.
- the plating compound was incrementally added through the conduit means 16 as controlled by the valve means 17 to the agitated slurry 10 by dripping it into the vortex created by the impeller of the mixing means 13.
- a solid plating compound was used the compound was initially dissolved in the same solvent as that employed to prepare the particulated powder-substrate slurry.
- a sim ilar solvent system was employed. However, it is to be understood that the pure plating compound itself can be utilized.
- EXAMPLE VI EXAMPLE VI'I SubstrateBeryllium powder Plating compound-Diisobutylaluminum hydride SolventDodecane Temperature of slurry210 C.
- the amount of coating to be deposited pursuant to the present process will vary with the type of substrate and its subsequent application. In general, for most applications the coating is a minor constituent of the finished product, that is, thin coatings are generally suitable. Preferably, coating-buildup ranges upwards to 50 volume percent based upon the finished coated product. It is to be understood that the finished product can contain or include any free metal (constituting the metal constituent of the plating compound) that is formed during the coating operation. In fact, there are instances where free metal can be present in the end product in considerable amounts without detrimental effect. For example, in the case of coated magnetic powders utilized in the preparation of permanent magnets. The free metal (plating metal) together with the coated particulated substrate can be fabricated by conventional metallurgical techniques into the desired magnet whereby the free metal serves as a matrix wherein the particulated substrate is suspended.
- a preliminary step prior to employing the technique of this invention may desirably require surface preparation of the substrate to be plated.
- preliminary surface preparation is not mandatory in the case of many substrates as they are commercially supplied since they are continually contacted and mixed with the solvent during the plating operation.
- a surface preparation step many well known methods of surface preparation can be employed. For example, degreasing followed by acid pickling and washing is one suitable approach.
- Particulated materials coated pursuant to the present invention find diversified uses both as individual components as well as intermediate components that can be further fabricated into unique articles of manufacture.
- appropriate base materials can be coated with materials such as nickel or the like to form catalysts.
- appropriate metal powders can be initially coated with aluminum which when subjected to conventional metallurgical techniques will serve as an appropriate binder.
- aluminum coating deposited by the instant invention on particles of iron-cobalt alloy, the aluminum serving as a binder for the particles in the preparation of permanent magnetic materials and also for the protection of the parts against oxidation, and corrosion conditions.
- the instant invention is also attractive for the coating of glass fibers, the coating serving to minimize deterioration of the glass fibers against subsequent loss in strength due to aging. Moreover, the present invention represents excellent means for preparing special alloys by depositing special coatings on ultra-fine metal powders.
- a process for metal plating a particulated substrate comprising in combination:
- a process for metal plating a particulated substrate which process comprises, in combination:
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Description
Dec. 22, 1970 w, R JR" EI'AL 3,549,412
METAL PLATING PARTICULATED SUBSTRATES Filed April 29, 1968 United States Patent O 3,549,412 METAL PLATING PARTICULATED SUBSTRATES Frederick W. Frey, Jr., and David R. Carley, Baton Rouge, La., assignors to Ethyl Corporation, New York, N.Y., a corporation of Virginia Continuation-impart of application Ser. No. 378,145, June 26, 1964. This application Apr. 29, 1968, Ser. No. 725,119
Int. Cl. B44d 1/06; C23c 3/04 US. Cl. l17100 14 Claims ABSTRACT OF THE DISCLOSURE Process for metal plating a particulated substrate by preparing a heated solvent slurry of the substrate under inert conditions and introducing a heat-decomposable metal plating compound into the heated slurry while providing agitation of the slurry and refluxing of the solvent vapors.
CROSS REFERENCE TO RELATED APPLICATION This application is a continuation-in-part of application Ser. No. 378,145, filed June 26, 1964, and now abandoned.
BACKGROUND OF THE INVENTION Solution plating as practiced in the art today generally comprises immersion of a hot substrate in a solution of a heat-decomposable metal compound. There are many advantages to solution plating employing heat-decomposable metal compounds to prepare high purity coatings. Among the attendant advantages of solution plating is that corrosion or oxidation of the substrate is greatly minimized both before and during the coating operation. Another chief advantage of solution plating is its simplicity and the economical attractiveness of the high utilization of the heat-decomposable metal compound which generally represents a significant portion of the cost of metal plating utilizing such materials. A serious limitation of solution plating, however, is its lack of suitability for plating substrates characterized by having a high heat trans'fer rate or low heat capacity, for example, see US. Pats. 2,523,461 and 3,041,197. The problem with such a substrate is that its contained heat as well as heat continually imparted to it is so rapidly conducted away and absorbed by the solution that little or no plating of the substrate occurs. In other words, the substrate is rapidly cooled below the temperature of decomposition of the heat-decomposable metal compound contained within the plating solution so that the process is generally restricted to the deposition of relatively thin coatings. The problem is not solved by simply increasing the heat input to the substrate because this leads to unfavorable side effects, such as decomposition of the compound away from the surface of the substrate and/or the formation of a loose nodular deposit. Moreover, there are many substrates having certain properties either inherent or imparted thereto which are altered or destroyed upon heating to an elevated temperature, e.g. metal powders having magnetic properties which are destroyed upon heating to elevated temperatures. The problems discussed above naturally result in a less efficient utilization of the heat-decomposable metal compound and impose a subsequent separation step to remove any decomposed free metal existing in the final product. The above disadvantages associated with solution plating as practiced in the art today makes coating of particulated substrates having a high surface area to mass ratio especially impracticable. Therefore, a low temperature process for the solution plating of particulated substrates, especially with more efficient utilization of the heat-decomposable metal compound, would represent a welcome contribution to the art.
An object of this invention is to provide a low temperature solution plating process whereby substrates having a high coeflicient of heat transfer can be readily plated.
Another object of this invention is to provide a low temperature solution plating process for plating substrates having special physical properties which would be impaired at high temperatures.
Yet another object of this invention is to provide a solution plating process utilizing a heat-decomposable metal compound whereby more efficient utilization of the compound is realized.
These and further objects will come to light as the discussion proceeds.
SUMMARY OF THE INVENTION The present invention provides a process for metal plating a particulated substrate, said process comprising in combination preparing a slurry of said particulated sub strate in a thermally stable organic solvent essentially inert under process conditions and capable of dissolving a heatdecomposable metal compound selected from the group consisting o'f triisobutylaluminum, diisobutylaluminum hydride, trimethylamine alane, bis(trimethylamine) alane, triethylamine alane, diethylaluminum hydride, and triethylaluminum, heating the prepared slurry in a system under substantially inert conditions to at least the decomposition temperature of said heat-decomposable metal compound, and introducing said heat-decomposable metal compound into the heated prepared slurry.
DESCRIPTION OF THE DRAWING The drawing depicts a schematic apparatus arrangement wherein a preferred embodiment of the present process can be conducted.
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention provides a process for metal plating a particulated substrate comprising preparing a slurry of the particulated substrate in a solvent capable of dissolving a heat-decomposable metal compound, heating the substrate-solvent slurry in a system under inert conditions to at least the decomposition temperature of the heat-decomposable metal compound, and incrementally introducing the heat-decomposable metal compound into the heated substrate-solvent slurry while continuously agitating the slurry. In this manner, the particulated substrate is expeditiously coated at a high degree of efficiency.
By incremental addition of the plating compound to the substrate-solvent slurry is meant addition at a rate sulficient to avoid excessive build up in concentration in the slurry, that is, opposed to a system where all of the plating compound is added initially. The heat-decomposable metal plating compound is preferably added to the particulated powder-substrate slurry at a rate sufficient to decompose the compound almost essentially instantaneously upon contact with the slurry. Generally, for most operations it can best be described as dripping the plating compound into the slurry. However, it is to be understood especially in the case of a large slurry mass, that the compound can be added in large volumes and on a continuous basis.
Addition of the plating compound to the slurry is regulated depending upon the ratio of substrate to solvent present, the mixing speed (that is, the rapidity at which each individual substrate member is brought into position and exposed to the plating compound), and the selected temperature for decomposing the plating compound.
Among the outstanding features and advantages of the instant invention is the fact that the thermal decomposition of heat-decomposable metal compounds in the above manner is primarily a surface catalyzed reaction such that decomposition proceeds at a temperature reduced below that normally required for decomposition of the specific heat-decomposable compound at the particulated substrate surface whereby a continuous, adherent, coherent coating is realized thereon. By controlling the process to effect a surface catalyzed reaction, deposition on non-substrate surfaces, such as the walls of a container, or in the solvent to produce free aluminum particles, is avoided. Moreover, it will be seen as the discussion proceeds that it is not necessary nor desirable to directly heat the substrate in order to decompose the heat-decomposable metal compound, but rather, the necessary heat can be supplied simply by heating the solvent to the preferred process temperature.
It is preferred to conduct the present process in a system under reflux conditions utilizing a solvent having a boiling point less than the temperature at which the heatdecomposable metal compound is normally decomposed but at least as great as the reduced temperature at which decomposition of the compound proceeds by a surface catalyzed reaction. Solvents having a boiling point greater than the normal decomposition temperature of the heatdecomposable metal compound can be used in an appplication where some solvent decomposition of the metal compound can be tolerated, for example in the coating of magnetic powders which are subsequently compactedinto a specific geometry, the main function of the coating being to serve as a binder so that some free metal can be tolerated. Reflux conditions are preferred since by continually cooling the solvent vapors and returning them to the slurry, the temperature of the substrate-solvent slurry is conveniently regulated.
Referring now to the drawing, the particulated substrate-solvent slurry contained in the vessel 11 is heated by heating means 12 and continually stirred or agitated by suitable means, such as the mixing means 13. When the substrate-solvent slurry 10 reaches the temperature at which the heat-decomposable metal compound is to be decomposed as indicated by the temperature indicating means 14, the plating compound 15 is then incrementally added via the conduit means 16 to the substrate-solvent slurry by regulation of the valve means 17. The plating compound is preferably brought into contact with the substrate-solvent slurry 10 in the close vicinity of the mixing means 13, e.g. in the vortex created thereby. This procedure insures rapid and efficient contact between the substrate and the plating compound. It is to be understood of course, that under refluxing conditions it is not mandatory to employ the mixing means 13 since sufiicient agitation can be achieved by ebullition of the solvent. As the substrate-solvent slurry 10 is heated, vapors 18 of the solvent are generated together with any volatile by-products of decomposition. The vapors 18 flow toward and upon contact with the condensing means 19 are condensed and returned to the slurry. Any by-product gases produced are allowed to pass out of or are swept out of the system by thermal ditfusion or with an inert carrier gas through the liquid bubbler means 20 via the line 22 wherein the valve means 23 is positioned. In this manner, the system is operated at essentially atmospheric pressure as would be indicated by the pressure gauge 21. The conduit 24 and valve means 25 are provided for purging and/ or filling the vessel 11.
It can be appreciated that considerable variations can be made in the apparatus arrangement depicted in the drawing without departing from the true spirit and scope of the present invention. For example, the plating compound 15 can be introduced directly within the substratesolvent slurry itself by immersing the conduit means 16 therein. Moreover, the substrate-solvent slurry 10 can be agitated by an inert gas introduced beneath the surface thereof and which gas can include vapors of the selected heat-decomposable metal compound. Additionally, automated components can be employed in the system and the operation conducted on a continuous basis.
The instant process is not limited by any particular size or geometry of substrate as long as it is capable of being mixed with a solvent to form a slurry. Moreover, the substrate must be capable of withstanding the requisite temperature to decompose the heat-decomposable metal compound, the only restriction being that it must be compatible with the solvent. Substrates employed herein can best be described as particulated materials, e.g. powders, pellets, small fasteners, and the like. Such finely comminuted materials are generally characterized as having a high heat transfer rate to the extent that they cannot be readily plated, if at all, by conventional solution plating techniques. Particulated metals, metal alloys, oxides, and carbides are especially preferred since these materials, heretofore difiicult to plate by conventional solution plating, are characterized by their excellent heat stability, plus the fact that unique articles of manufacture as hereinafter described are readily produced by way of the present process. However, other particulated materials, such as glass, ceramics, refractories, graphite, etc., can likewise be employed. The present process provides efficient plating of such substrates at low temperatures regardless of their particular size or configuration as long as they can be slurried. The instant process is, however, particularly attractive for coating particulated substrates having an average particle size less than about mils, especially less than about 30 mils. A preferred embodiment of the instant invention comprises utilizing as a particulated substrate a magnetic metal powder having an average particle size less than about 1 micron, e.g. fine particle magnets comprising an iron-cobalt alloy which materials cannot be heated above 200 C. for extended periods of time without losing their special magnetic properties. Such materials when coated by the instant process utilizing a heat-decomposable aluminum compound and dispersed in a non-magnetic matrix (e.g. aluminum) can be formed into a high coercive force permanent magnet.
Preferred heat-decomposable plating compounds are (A) metal hydrides and their complexes having the fol lowing formulas:
(I) MH or MH -Ligand and ( R MH wherein M is a metal atom, R is an alkyl or aryl group, H is hydrogen, and m and n are small whole integers ranging from 1 to 4, and (B) organometallic compounds having the following formulas:
(III) R M wherein is an alkyl, aryl, arene, cyclopentadienyl, cyclopentadrene, alkaryl, or aralkyl radical, M is a metal astom, and m is a small whole integer ranging from 1 to and (Iv) R MX wherein R and M are defined as above and X is selected from the group consisting of carbonyls, nitrosyls, phosphines, and mixtures thereof, and m and y are small whole integers ranging from 1 to 4, and
( )m 0r X( )n and (VI) M(CNR) wherein M is a metal atom, R is hydrogen, an alkyl, or aryl radical, in is a small whole integer ranging from 4 to 6, x is a small whole integer ranging from 2 to 4, and the ratio n/x ranges from 3 to 5 and (VII) )m( )n wherein M is a metal atom and m and n are small whole mtegers ranging from 1 to 3.
Exemplary of suitable compounds are: silane, stannane, diethylaluminum hydride, diisobutylaluminum hydride, trimethylaminegallane, tertiary amine alanes including trimethylaminealane, bis(trimethylamine)alane, triethylaminealane, triisopropylaminealane, tri-n-butylaminealane, and tri-sec-butylaminealane, diisobutylberyllium, di-tert-butylberyllium, diethylmagnesium, di-tertbutylmagnesium, diethylzinc, diethylcadmium, triethylborane, triethylaluminum, triisobutylaluminum, diethyltin, tetraethyltin, tetraethyllead, dibenzene chromium, dimesitylene chromium, dibenzene molybdenum, dimesitylene molybdenum, dicumene tungsten, bis-cyclopentadienyltitanium, bis-cyclopentadienylmanganese, bis-cyclopentadienyliron, bis-cyclopentadienylnickel, cumene chromium dinitrosyl, benzene molybdenum tricarbonyl, cyclopentadienyltitanium dicarbonyl, cyclopentadienylchromium tricarbonyl, cyclopentadienylmanganese tricarbonyl, methylcyclopentadienylmanganese tricarbonyl, cyclopentadienylcobalt dicarbonyl, bis(cyclopentadienylnickel carbonyl), methylcyclopentadienylnickel nitrosyl, vanadium hexacarbonyl, niobium hexacarbonyl, tantalum hexacarbonyl, chromium hexacarbonyl, molybdenum hexacarbonyl, tungsten hexacarbonyl, iron pentacarbonyl, cobalt tetracarbonyl, nickel tetracarbonyl, iron tricarbonyl nitrosyl, iron dicarbonyl dinitrosyl, cobalt tricarbonyl nitrosyl, chromium hexaphenylisonitrile, nickel tetra-phenylisonitrile, and the like.
Metals which can comprise the metal constituent of the metal compounds to be employed in this invention are, in general, any metals of Groups II-A through V-A of the Periodic Chart of the Elements (Fisher Scientific Company, 1955). However, heat-decomposable metal compounds containing the following metals are preferred: Beryllium, titanium, zirconium, niobium, tantalum, chromium, molybdenum, tungsten, cobalt, nickel, copper, zinc, cadmium, aluminum, tin, and lead. Aluminum is an especially preferred metal for coating the preferred particulated substrates because it can be readily deposited, it is very soft and ductile and thereby amenable to powder metallurgical techniques, and exhibits good corrosion and high temperature oxidation resistance. Of the heat-decomposable aluminum compounds the most preferred are triisobutylaluminum, diisobutylaluminum hydride, and trimethylamine alane.
The organometallic compounds employed herein are generally decomposed at a temperature within the range of from about 100 C. to about 500 C., quite often even below 300 C. The preferred organoaluminum compounds triisobutylaluminum and diisobutylaluminum hydride are preferably decomposed at a temperature within the range of from about 175 C. to about 220 C. Trimethylamine alane is generally decomposed at a temperature of from about 100 C. to about 200 0., especially within about 120 C. to about 160 C.
The solvents which can be employed in the novel process of this invention are those thermally stable solvents which are essentially inert under the process conditions. Generally, organic solvents having up to about 18 carbon atoms are preferred since they are more economical, being readily available while offering many desirable features such as enumerated below. By thermal stability it is meant that the solvent must not decompose to carbon containing solid residues at the temperature required for the plating operation. The solvent should also be essentially inert and compatible with the plating compound so as to avoid any reaction leading to a loss of plating compound. Additionally the solvent should also be compatible with the coating effected and the particulated substrate being coated. Typical types of solvents that can be employed in the present process are hydrocarbon sol- Vents, such as: Alkanes, aromatics, cycloalkanes, fused ring aromatics, and the like. Ethers such as the alkyl ethers, glycol ethers, polyaromatic ethers, and such, can also be used. Typical of other solvents which can be employed in certain specific instances are the fluorocarbons, silicone oils, alcohols, ketones, and the like. From a cost-effectiveness standpoint, aromatic hydrocarbon solvents are preferred for use in this invention, such as: toluene, xylene, mesitylene, decalene, and the like.
Exemplary of suitable solvents are kerosene, Primol- D (an essentially aliphatic hydrocarbon solvent), hexane, benzene, toluene, xylene, alpha-methylnaphthalene, betamethylnaphthalene, 1,4-dimethylnaphthalene, decahydronaphthalene, 1-ethyl-3-methylbenzene, 1-ethyl-4-methylbenzene, isopropylbenzene, alpha-methoxy toluene, 1- methyl-2-propylbenzene, l-methyl 3 propylbenzene, lmethyl-4-propylbenzene, 1,2,3,4 tetrahydronaphthalene, pentane, heptane, decane, nonane, octane, cyclopentane, cyclohexane, methylcyclohexane, polymethylsiloxane, methylethylketone, dibutyl ketone, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, propylene glycol dimethyl ether, diphenyl ether, anisole, propyl ether, tetrahydrofuran, diethyl glycol dimethyl ether, and mixtures thereof, such as might be found in petroleum distillates.
In order that those skilled in the art can thus appreciate the process of this invention, the following examples are given by way of description and not by way of limitation. In the examples, the apparatus arrangement shown in the drawing was employed. The heating means 12 consisted of an electric resistance heater. A conventional electrically driven mixer was employed as the mixing means 13. The slurry 10 consisting of the particulated substrate and solvent was charged into the vessel 11 which had been previously purged with nitrogen through line 24 to rid the system of air and moisture. In those instances where the slurry 10 was thought to contain traces of moisture, the startup procedure comprised first heating the slurry 10 so as to distill off a small amount of solvent and co-distill any traces of moisture which was allowed to escape from the vessel 11 through the line 22 to the bubbler means 20. Thereafter the condenser means 19 was set into operation by opening the valve means 26 which allowed cooling fluid to move through the means 19. Concurrently, the mixing means 13 was set into operation and the heater means 12 adjusted so as to heat the slurry 10 to the temperature employed for decomposing the particular heat-decomposable metal compound employed in each specific instance enumerated below. By virtue of the temperature indicating means 14 the operator could observe and regulate the temperature during the plating operation. When the system reached equilibrium, that is, the flow rate of the solvent vapors 18 was equal to that of the solvent 27 refluxed back to the slurry 10 by controlling the extent of cooling via the cooling means 19 (for the preferred method of operation), the system was then ready to commence plating. Under these conditions the pressure gauge 21 read essentially atmospheric pressure.
The plating compound was incrementally added through the conduit means 16 as controlled by the valve means 17 to the agitated slurry 10 by dripping it into the vortex created by the impeller of the mixing means 13. In the following runs, where a solid plating compound was used the compound was initially dissolved in the same solvent as that employed to prepare the particulated powder-substrate slurry. Where liquid compounds were used, a sim ilar solvent system was employed. However, it is to be understood that the pure plating compound itself can be utilized.
EXAMPLE I Substrate-Magnetic Alloy Powder Plating compoundTriisobutylaluminum-(C H A1 SolventDodecane Temperature of slurry195 C.
ResultsGray metallic coating encapsulating individual agglomerates of alloy powder.
7 EXAMPLE II Substrate-Magnetic Powder Plating compoundTrimethylamine alaneAiH -Me N SolventXylene Temperature of slurryl40 C.
ResultsGray metallic coating encapsulating individual agglomerates of alloy powder.
EXAMPLE III SubstrateGlass fibers Plating compound-Trimethylamine a1aneAlH -Me N SolventXylene Temperature of slurryl40 C.
Results-Dull gray aluminum deposit coating individual particles of glass fibers.
EXAMPLE IV Substrate-Magnesium oxide-MgO Plating compoundChromium hexacarbonylCr(CO) SolventOctadecane Temperature of slurry3 C.
Results-Chromium coated MgO for compaction into massive metal with improved ductility.
EXAMPLE V SubstrateSubmicron thorium oxideThO Plating compound-Nickel tetracarbonylNi(CO) SolventXylene Temperature of slurry120" C.
ResultsThori-a dispersed nickel powder for conversion to dispersion strengthened nickel parts.
EXAMPLE VI EXAMPLE VI'I SubstrateBeryllium powder Plating compound-Diisobutylaluminum hydride SolventDodecane Temperature of slurry210 C.
ResultsAluminum-coated beryllium powder for compaction into light, ductile metal with high strength-toweight rates.
EXAMPLE VIII SubstrateMagnetic powder Plating compound-Cyclopentadienylcopper triethylphosphineCyCu (Et P) SolventDecalin Temperature of slurry-195 C.
ResultsCopper-coated magnetic powder for fabrication into corrosion-resistant magnetic parts with high coercive force.
EXAMPLE IX Substrate-Lead oxide Plating compound-Tetraethyllead-EQPb SolventDodecane Temperature of slurry126 C. ResultsDispersion-hardened Pb alloy.
EXAMPLE X SubstrateGraphite Plating compoundcyclopentadienyltitanium dicarbonylCyTi(CO) Solvent-Octfidecane Temperature of slurry-300 C. ResultsTitanium-coated graphite for fabrication into electrodes of improved oxidation resistance.
The amount of coating to be deposited pursuant to the present process will vary with the type of substrate and its subsequent application. In general, for most applications the coating is a minor constituent of the finished product, that is, thin coatings are generally suitable. Preferably, coating-buildup ranges upwards to 50 volume percent based upon the finished coated product. It is to be understood that the finished product can contain or include any free metal (constituting the metal constituent of the plating compound) that is formed during the coating operation. In fact, there are instances where free metal can be present in the end product in considerable amounts without detrimental effect. For example, in the case of coated magnetic powders utilized in the preparation of permanent magnets. The free metal (plating metal) together with the coated particulated substrate can be fabricated by conventional metallurgical techniques into the desired magnet whereby the free metal serves as a matrix wherein the particulated substrate is suspended.
A preliminary step prior to employing the technique of this invention may desirably require surface preparation of the substrate to be plated. However, a feature of the present invention is that preliminary surface preparation is not mandatory in the case of many substrates as they are commercially supplied since they are continually contacted and mixed with the solvent during the plating operation. Where it is desired to implement the present technique with a surface preparation step many well known methods of surface preparation can be employed. For example, degreasing followed by acid pickling and washing is one suitable approach.
Particulated materials coated pursuant to the present invention find diversified uses both as individual components as well as intermediate components that can be further fabricated into unique articles of manufacture. For example, appropriate base materials can be coated with materials such as nickel or the like to form catalysts. Pursuant to the preferred embodiment of the instant invention, appropriate metal powders can be initially coated with aluminum which when subjected to conventional metallurgical techniques will serve as an appropriate binder. Of special interest is the use of an aluminum coating deposited by the instant invention on particles of iron-cobalt alloy, the aluminum serving as a binder for the particles in the preparation of permanent magnetic materials and also for the protection of the parts against oxidation, and corrosion conditions. The instant invention is also attractive for the coating of glass fibers, the coating serving to minimize deterioration of the glass fibers against subsequent loss in strength due to aging. Moreover, the present invention represents excellent means for preparing special alloys by depositing special coatings on ultra-fine metal powders.
It is to be understood that the present invention is not limited by the specific embodiments described hereinabove, but includes such changes and modifications as may be apparent to one skilled in the art upon reading the appended claims.
We claim:
1. A process for metal plating a particulated substrate, said process comprising in combination:
( 1) preparing a slurry of said particulated substrate in a thermally stable organic solvent essentially inert under process conditions and capable of dissolving a heat-decomposable metal compound selected from the group consisting of triisobutylaluminum, diisobutylaluminum hydride, and trimethylamine alane,
(2) heating the prepared slurry in a system under substantially inert conditions to at least the decomposition temperature of said heat-decomposable metal compound, and
(3) introducing said heat-decomposable metal compound incrementally into the heated prepared slurry while continuously agitating the slurry.
Z. The process of claim 1 wherein the heating step produces solvent vapors which are refluxed as a means of controlling the temperature of the substrate-solvent slurry.
3. The process of claim 1 wherein the substrate comprises small fasteners.
4. The process of claim 1 wherein the substrate comprises a powder.
5. The process of claim 1 wherein the substrate comprises pellets.
6. The process of claim 1 wherein the substrate comprises fibers.
7. A process for metal plating a particulated substrate, which process comprises, in combination:
(1) agitating a slurry of said particulated substrate in an organic solvent for a heat-decomposable metaldepositing compound selected from the group consisting of metal hydrides, complexes of metal hydrides, and organometallics, said solvent being essentially inert under metal-depositing conditions,
(2) heating the slurry to a temperature high enough to cause the metal-depositing compound to deposit a metal plating when' in contact with the substrate but below the normal decomposition temperature of the compound when not in such contact, and
(3) introducing said compound into the agitated heated slurry.
8. The process of claim 7 wherein said slurry is heated under substantially inert conditions.
9. The process of claim 7 wherein said compound is introduced incrementally.
10. The process of claim 7 wherein the heating step produces solvent vapors which are refluxed as a means of controlling the temperature of the substrate-solvent slurry.
11. The process of claim 7 wherein the substrate comprises small fasteners.
12. The process of claim 7 wherein the substrate comprises a powder.
13. The process of claim 7 wherein the substrate comprises pellets.
14. The process of claim 7 wherein the substrate comprises fibers.
References Cited UNITED STATES PATENTS 3,155,532 11/1964 Basile 1'17--130X 3,251,712 5/1966 Berger 117130X 3,300,329 1/1967 Orsino et al. 117--100X 2,523,461 9/1950 Young et a1. 117-47 2,918,392 12/1959 Beller 117160X 3,041,197 6/1962 Berger 1177-47 3,075,858 1/1963 Breining et al. 117-160X 3,138,479 6/1964 Foley 1177X 3,202,537 8/1965 Norman et a1. 117100 3,214,288 10/1965 McGraw 117l60X 3,216,845 11/1965 Brown 117-160X 3,237,066 2/1966 Martin et a1. 117-100 3,342,587 9/1967 Goodrich et a1 117100 WILLIAM D. MARTIN, Primary Examiner US. Cl. X.R.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US72511968A | 1968-04-29 | 1968-04-29 |
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| Publication Number | Publication Date |
|---|---|
| US3549412A true US3549412A (en) | 1970-12-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US725119A Expired - Lifetime US3549412A (en) | 1968-04-29 | 1968-04-29 | Metal plating particulated substrates |
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| US (1) | US3549412A (en) |
Cited By (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3652321A (en) * | 1970-08-17 | 1972-03-28 | Continental Oil Co | Deposition of aluminum on a galvanized surface |
| US3972726A (en) * | 1973-10-18 | 1976-08-03 | Battelle Memorial Institute | Process for manufacturing a negative accumulator electrode for the reversible storage and restitution of hydrogen |
| US4150173A (en) * | 1976-08-02 | 1979-04-17 | Xerox Corporation | Process of preparing transparent colored magnetic materials |
| US4199614A (en) * | 1976-08-02 | 1980-04-22 | Xerox Corporation | Transparent colored magnetic materials and electrostatographic process |
| US4262037A (en) * | 1976-04-05 | 1981-04-14 | Hitachi, Ltd. | Method of producing ferromagnetic metal powder |
| US4264648A (en) * | 1976-09-10 | 1981-04-28 | Xerox Corporation | Low specific gravity magnetic carrier materials |
| US4267247A (en) * | 1976-09-10 | 1981-05-12 | Xerox Corporation | Low specific gravity magnetic carrier materials |
| US4369076A (en) * | 1980-06-20 | 1983-01-18 | Dainippon Ink & Chemicals Inc. | Process for producing magnetic metal powder |
| US4585673A (en) * | 1984-05-07 | 1986-04-29 | Gte Laboratories Incorporated | Method for coating phosphor particles |
| US4710674A (en) * | 1984-05-07 | 1987-12-01 | Gte Laboratories Incorporated | Phosphor particle, fluorescent lamp, and manufacturing method |
| US4797594A (en) * | 1985-04-03 | 1989-01-10 | Gte Laboratories Incorporated | Reprographic aperture lamps having improved maintenance |
| US4825124A (en) * | 1984-05-07 | 1989-04-25 | Gte Laboratories Incorporated | Phosphor particle, fluorescent lamp, and manufacturing method |
| US5034274A (en) * | 1989-12-11 | 1991-07-23 | Advanced Technology Materials, Inc. | Salt-doped chaff fiber having an evanescent electromagnetic detection signature, and method of making the same |
| US5039990A (en) * | 1989-12-11 | 1991-08-13 | Advanced Technology Materials, Inc. | Galvanically dissipatable evanescent chaff fiber |
| US5087515A (en) * | 1989-12-11 | 1992-02-11 | Advanced Technology Materials, Inc. | Chaff fiber comprising insulative coating thereon, and having an evanescent radar reflectance characteristic, and method of making the same |
| US5204314A (en) * | 1990-07-06 | 1993-04-20 | Advanced Technology Materials, Inc. | Method for delivering an involatile reagent in vapor form to a CVD reactor |
| US5225561A (en) * | 1990-07-06 | 1993-07-06 | Advanced Technology Materials, Inc. | Source reagent compounds for MOCVD of refractory films containing group IIA elements |
| US5234715A (en) * | 1989-12-11 | 1993-08-10 | Advanced Technology Materials, Inc. | Method of making galvanically dissipatable evanescent chaff fiber |
| US5280012A (en) * | 1990-07-06 | 1994-01-18 | Advanced Technology Materials Inc. | Method of forming a superconducting oxide layer by MOCVD |
| US5346730A (en) * | 1990-07-27 | 1994-09-13 | Kali-Chemie Ag | Process for depositing a copper containing layer I |
| US5352519A (en) * | 1989-12-11 | 1994-10-04 | Advanced Technology Materials, Inc. | Sulfurized chaff fiber having an evanescent radar reflectance characteristic, and method of making the same |
| US5453494A (en) * | 1990-07-06 | 1995-09-26 | Advanced Technology Materials, Inc. | Metal complex source reagents for MOCVD |
| US5512711A (en) * | 1992-12-28 | 1996-04-30 | International Business Machines Corporation | Copper-based paste containing refractory metal additions for densification control |
| US5536323A (en) * | 1990-07-06 | 1996-07-16 | Advanced Technology Materials, Inc. | Apparatus for flash vaporization delivery of reagents |
| US5571621A (en) * | 1989-12-11 | 1996-11-05 | Advanced Technology Materials, Inc. | Infrared radiation-interactive article, and method of generating a transient infrared radiation response |
| US5686178A (en) * | 1989-12-11 | 1997-11-11 | Advanced Technology Materials, Inc. | Metal-coated substrate articles responsive to electromagnetic radiation, and method of making the same |
| US5719417A (en) * | 1996-11-27 | 1998-02-17 | Advanced Technology Materials, Inc. | Ferroelectric integrated circuit structure |
| US5876503A (en) * | 1996-11-27 | 1999-03-02 | Advanced Technology Materials, Inc. | Multiple vaporizer reagent supply system for chemical vapor deposition utilizing dissimilar precursor compositions |
| US5882416A (en) * | 1997-06-19 | 1999-03-16 | Advanced Technology Materials, Inc. | Liquid delivery system, heater apparatus for liquid delivery system, and vaporizer |
| US5923970A (en) * | 1997-11-20 | 1999-07-13 | Advanced Technology Materials, Inc. | Method of fabricating a ferrolelectric capacitor with a graded barrier layer structure |
| US6017628A (en) * | 1989-12-11 | 2000-01-25 | Alliant Defense Electronics Systems, Inc. | Metal-coated substrate articles responsive to electromagnetic radiation, and method of making and using the same |
| US6126996A (en) * | 1990-07-06 | 2000-10-03 | Advanced Technology Materials, Inc. | Metal complex source reagents for chemical vapor deposition |
| US20050265785A1 (en) * | 1998-10-27 | 2005-12-01 | Delaware Capital Formation, Inc. | Apparatus and method for three-dimensional contouring |
| US8299286B2 (en) | 1990-07-06 | 2012-10-30 | Advanced Technology Materials, Inc. | Source reagent compositions and method for forming metal films on a substrate by chemical vapor deposition |
| WO2022144638A1 (en) | 2020-12-29 | 2022-07-07 | 3M Innovative Properties Company | Electromagnetic absorbing composites |
| WO2022144670A1 (en) | 2020-12-29 | 2022-07-07 | 3M Innovative Properties Company | Electromagnetic absorbing composites |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2523461A (en) * | 1946-03-15 | 1950-09-26 | John T Young | Plating with metal carbonyl |
| US2918392A (en) * | 1957-01-04 | 1959-12-22 | Gen Aniline & Film Corp | Method of depositing metal in the pores of a porous body |
| US3041197A (en) * | 1959-06-01 | 1962-06-26 | Berger Carl | Coating surfaces with aluminum |
| US3075858A (en) * | 1958-01-21 | 1963-01-29 | Union Carbide Corp | Deposition of composite coatings by vapor phase plating method |
| US3138479A (en) * | 1961-12-20 | 1964-06-23 | Burroughs Corp | Method for the electroless deposition of high coercive magnetic film |
| US3155532A (en) * | 1960-11-10 | 1964-11-03 | Union Carbide Corp | Metal plating process |
| US3202537A (en) * | 1962-05-01 | 1965-08-24 | Ethyl Corp | Method of metal plating by fluidized bed |
| US3214288A (en) * | 1961-12-14 | 1965-10-26 | Nat Steel Corp | Process for the deposition of metallic aluminum |
| US3216845A (en) * | 1962-09-06 | 1965-11-09 | Ferro Corp | Metal depositions from alkoxides |
| US3237066A (en) * | 1963-02-25 | 1966-02-22 | Sprague Electric Co | Capacitor with electrodes of metal coated particles |
| US3251712A (en) * | 1962-09-21 | 1966-05-17 | Berger Carl | Metal plating with a heated hydrocarbon solution of a group via metal carbonyl |
| US3300329A (en) * | 1960-09-26 | 1967-01-24 | Nat Lead Co | Metal-polyolefin compositions and process for making same |
| US3342587A (en) * | 1964-05-25 | 1967-09-19 | Int Nickel Co | Method for the production of metal and metal-coated powders |
-
1968
- 1968-04-29 US US725119A patent/US3549412A/en not_active Expired - Lifetime
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2523461A (en) * | 1946-03-15 | 1950-09-26 | John T Young | Plating with metal carbonyl |
| US2918392A (en) * | 1957-01-04 | 1959-12-22 | Gen Aniline & Film Corp | Method of depositing metal in the pores of a porous body |
| US3075858A (en) * | 1958-01-21 | 1963-01-29 | Union Carbide Corp | Deposition of composite coatings by vapor phase plating method |
| US3041197A (en) * | 1959-06-01 | 1962-06-26 | Berger Carl | Coating surfaces with aluminum |
| US3300329A (en) * | 1960-09-26 | 1967-01-24 | Nat Lead Co | Metal-polyolefin compositions and process for making same |
| US3155532A (en) * | 1960-11-10 | 1964-11-03 | Union Carbide Corp | Metal plating process |
| US3214288A (en) * | 1961-12-14 | 1965-10-26 | Nat Steel Corp | Process for the deposition of metallic aluminum |
| US3138479A (en) * | 1961-12-20 | 1964-06-23 | Burroughs Corp | Method for the electroless deposition of high coercive magnetic film |
| US3202537A (en) * | 1962-05-01 | 1965-08-24 | Ethyl Corp | Method of metal plating by fluidized bed |
| US3216845A (en) * | 1962-09-06 | 1965-11-09 | Ferro Corp | Metal depositions from alkoxides |
| US3251712A (en) * | 1962-09-21 | 1966-05-17 | Berger Carl | Metal plating with a heated hydrocarbon solution of a group via metal carbonyl |
| US3237066A (en) * | 1963-02-25 | 1966-02-22 | Sprague Electric Co | Capacitor with electrodes of metal coated particles |
| US3342587A (en) * | 1964-05-25 | 1967-09-19 | Int Nickel Co | Method for the production of metal and metal-coated powders |
Cited By (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3652321A (en) * | 1970-08-17 | 1972-03-28 | Continental Oil Co | Deposition of aluminum on a galvanized surface |
| US3972726A (en) * | 1973-10-18 | 1976-08-03 | Battelle Memorial Institute | Process for manufacturing a negative accumulator electrode for the reversible storage and restitution of hydrogen |
| US4262037A (en) * | 1976-04-05 | 1981-04-14 | Hitachi, Ltd. | Method of producing ferromagnetic metal powder |
| US4150173A (en) * | 1976-08-02 | 1979-04-17 | Xerox Corporation | Process of preparing transparent colored magnetic materials |
| US4199614A (en) * | 1976-08-02 | 1980-04-22 | Xerox Corporation | Transparent colored magnetic materials and electrostatographic process |
| US4264648A (en) * | 1976-09-10 | 1981-04-28 | Xerox Corporation | Low specific gravity magnetic carrier materials |
| US4267247A (en) * | 1976-09-10 | 1981-05-12 | Xerox Corporation | Low specific gravity magnetic carrier materials |
| US4369076A (en) * | 1980-06-20 | 1983-01-18 | Dainippon Ink & Chemicals Inc. | Process for producing magnetic metal powder |
| US4585673A (en) * | 1984-05-07 | 1986-04-29 | Gte Laboratories Incorporated | Method for coating phosphor particles |
| US4710674A (en) * | 1984-05-07 | 1987-12-01 | Gte Laboratories Incorporated | Phosphor particle, fluorescent lamp, and manufacturing method |
| US4825124A (en) * | 1984-05-07 | 1989-04-25 | Gte Laboratories Incorporated | Phosphor particle, fluorescent lamp, and manufacturing method |
| US4797594A (en) * | 1985-04-03 | 1989-01-10 | Gte Laboratories Incorporated | Reprographic aperture lamps having improved maintenance |
| US5087515A (en) * | 1989-12-11 | 1992-02-11 | Advanced Technology Materials, Inc. | Chaff fiber comprising insulative coating thereon, and having an evanescent radar reflectance characteristic, and method of making the same |
| US5352519A (en) * | 1989-12-11 | 1994-10-04 | Advanced Technology Materials, Inc. | Sulfurized chaff fiber having an evanescent radar reflectance characteristic, and method of making the same |
| US6017628A (en) * | 1989-12-11 | 2000-01-25 | Alliant Defense Electronics Systems, Inc. | Metal-coated substrate articles responsive to electromagnetic radiation, and method of making and using the same |
| US5686178A (en) * | 1989-12-11 | 1997-11-11 | Advanced Technology Materials, Inc. | Metal-coated substrate articles responsive to electromagnetic radiation, and method of making the same |
| US5039990A (en) * | 1989-12-11 | 1991-08-13 | Advanced Technology Materials, Inc. | Galvanically dissipatable evanescent chaff fiber |
| US5234715A (en) * | 1989-12-11 | 1993-08-10 | Advanced Technology Materials, Inc. | Method of making galvanically dissipatable evanescent chaff fiber |
| US5571621A (en) * | 1989-12-11 | 1996-11-05 | Advanced Technology Materials, Inc. | Infrared radiation-interactive article, and method of generating a transient infrared radiation response |
| US5328717A (en) * | 1989-12-11 | 1994-07-12 | Advanced Technology Materials, Inc. | Method of making a salt-doped metal-coated article having an evanescent electromagnetic detection signature |
| US5034274A (en) * | 1989-12-11 | 1991-07-23 | Advanced Technology Materials, Inc. | Salt-doped chaff fiber having an evanescent electromagnetic detection signature, and method of making the same |
| US5225561A (en) * | 1990-07-06 | 1993-07-06 | Advanced Technology Materials, Inc. | Source reagent compounds for MOCVD of refractory films containing group IIA elements |
| US5453494A (en) * | 1990-07-06 | 1995-09-26 | Advanced Technology Materials, Inc. | Metal complex source reagents for MOCVD |
| US8299286B2 (en) | 1990-07-06 | 2012-10-30 | Advanced Technology Materials, Inc. | Source reagent compositions and method for forming metal films on a substrate by chemical vapor deposition |
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| US5536323A (en) * | 1990-07-06 | 1996-07-16 | Advanced Technology Materials, Inc. | Apparatus for flash vaporization delivery of reagents |
| US5280012A (en) * | 1990-07-06 | 1994-01-18 | Advanced Technology Materials Inc. | Method of forming a superconducting oxide layer by MOCVD |
| US5204314A (en) * | 1990-07-06 | 1993-04-20 | Advanced Technology Materials, Inc. | Method for delivering an involatile reagent in vapor form to a CVD reactor |
| US5346730A (en) * | 1990-07-27 | 1994-09-13 | Kali-Chemie Ag | Process for depositing a copper containing layer I |
| US5525761A (en) * | 1992-12-28 | 1996-06-11 | International Business Machines Corporation | Copper-based paste containing refractory metal additions for densification control |
| US5512711A (en) * | 1992-12-28 | 1996-04-30 | International Business Machines Corporation | Copper-based paste containing refractory metal additions for densification control |
| US5876503A (en) * | 1996-11-27 | 1999-03-02 | Advanced Technology Materials, Inc. | Multiple vaporizer reagent supply system for chemical vapor deposition utilizing dissimilar precursor compositions |
| US5998236A (en) * | 1996-11-27 | 1999-12-07 | Advanced Technology Materials, Inc. | Process for controlled orientation of ferroelectric layers |
| US5719417A (en) * | 1996-11-27 | 1998-02-17 | Advanced Technology Materials, Inc. | Ferroelectric integrated circuit structure |
| US5882416A (en) * | 1997-06-19 | 1999-03-16 | Advanced Technology Materials, Inc. | Liquid delivery system, heater apparatus for liquid delivery system, and vaporizer |
| US5923970A (en) * | 1997-11-20 | 1999-07-13 | Advanced Technology Materials, Inc. | Method of fabricating a ferrolelectric capacitor with a graded barrier layer structure |
| US6072689A (en) * | 1997-11-20 | 2000-06-06 | Advanced Technology Materials, Inc. | Ferroelectric capacitor and integrated circuit device comprising same |
| US20050265785A1 (en) * | 1998-10-27 | 2005-12-01 | Delaware Capital Formation, Inc. | Apparatus and method for three-dimensional contouring |
| WO2022144638A1 (en) | 2020-12-29 | 2022-07-07 | 3M Innovative Properties Company | Electromagnetic absorbing composites |
| WO2022144670A1 (en) | 2020-12-29 | 2022-07-07 | 3M Innovative Properties Company | Electromagnetic absorbing composites |
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