US3539775A - Double-make contact switching apparatus with improved alternating current arc suppression means - Google Patents

Double-make contact switching apparatus with improved alternating current arc suppression means Download PDF

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Publication number
US3539775A
US3539775A US766505A US3539775DA US3539775A US 3539775 A US3539775 A US 3539775A US 766505 A US766505 A US 766505A US 3539775D A US3539775D A US 3539775DA US 3539775 A US3539775 A US 3539775A
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Prior art keywords
switch
contact
contacts
double
switching
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Expired - Lifetime
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US766505A
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English (en)
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Charles F Casson
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Siemens Electromechanical Components Inc
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AMF Inc
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Assigned to POTTER & BRUMFIELD INC., A CORP OF DELAWARE reassignment POTTER & BRUMFIELD INC., A CORP OF DELAWARE ASSIGNMENT OF ASSIGNORS INTEREST. Assignors: AMF INCORPORATED
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Assigned to POTTER & BRUMFIELD, INC. reassignment POTTER & BRUMFIELD, INC. ASSIGNMENT OF ASSIGNORS INTEREST. Assignors: POTTER & BRUMFIELD, INC., A DE CORP.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H9/00—Details of switching devices, not covered by groups H01H1/00 - H01H7/00
    • H01H9/54—Circuit arrangements not adapted to a particular application of the switching device and for which no provision exists elsewhere
    • H01H9/541—Contacts shunted by semiconductor devices
    • H01H9/542—Contacts shunted by static switch means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H9/00—Details of switching devices, not covered by groups H01H1/00 - H01H7/00
    • H01H9/54—Circuit arrangements not adapted to a particular application of the switching device and for which no provision exists elsewhere
    • H01H9/541—Contacts shunted by semiconductor devices
    • H01H9/542—Contacts shunted by static switch means
    • H01H2009/546—Contacts shunted by static switch means the static switching means being triggered by the voltage over the mechanical switch contacts

Definitions

  • This invention relates to electrical switching means of the double-make contact type for selectively coupling a load to an alternating current source, and more particularly to such switching means including arc-suppression means effecting improved contact life and current ratings for such switching means.
  • an object of this invention is to provide an electrical switching apparatus having improved switch contact protection, which obviates problems heretofore associated with attempts to increase switch contact life.
  • Another objeect of this invention is to provide a new and novel means for sensing the presence of an arc to be suppressed and effecting suppression of said are in a switch apparatus of the double-make contact type.
  • Another object of this invention is to provide a switching apparatus of the double-make contact type in which substantially all arcing resulting from contact disengagement is eliminated, thereby increasing contact life and the current ratings of such switching apparatus.
  • Another object is to provide a switching apparatus of the type described which is of rugged and uncomplicated construction, is relatively economical to manufacture, and provides increased reliability of the overall switch circuitry.
  • a further object is to devise such a switching apparatus employing a solid state device and in which no external triggering circuit is needed.
  • Another object is to provide a switching unit of the type described for connecting an alternating current power source to a load, wherein the magnitude of currents switched is greater than that possible for contacts alone, and wherein the magnitude of currents continuously conducted is greater than that possible for solid state switch devices alone.
  • a related object is to provide such as switching unit which uses a minimum mass of contact material.
  • This invention contemplates the protection of electrical switch contacts in double-make contact type switches by the use of a monostable quiescently non-conductive, bilateral semiconductor device having a first electrode connected to one of the double-make switch contacts and an AC power source; a second electrode connected to the other of the double-make switch contacts and a load; and a third electrode, of a gate or trigger control type, connected through conductive means to a third switch contact, the latter comprising the common switch bar or shunt engaging the double-make contacts of the switch.
  • the device When the contacts disengage due to normal intended disengagement or to contact bounce after engagement, the device is trigered substantially instantaneously to the conductive state by the voltage conditions at the contacts acting on the gate terminal of the bilateral semiconductor device.
  • the current in the circuit following the disengagement of the contacts is conducted through the device until the contacts reengage or the normal cycle of current being conducted drops below the holding current required to maintain the device in its conducting state.
  • continuous conduction is provided by the contacts, and conduction during switching disengagement and bounce is provided by the semiconductor device. This permits a combination of high-current capability, for both switching and continuous conducting, heretofore not available.
  • the drawing is a schematic diagram of a switching means of the double-make contact type including arc suppressive and protective means of the present invention.
  • an electric switching means 10 is shown as comprising a double-make contact type switch S and a bilateral semiconductor switch means D.
  • the switch S comprises first and second in-line contacts 12 and 14 shunted selectively by a third contact or switch bar 16.
  • the first contact 12 is connected through a power lead P1 to one side of an AC source 18 such as a 120 volt, 60 cycle source; and the second contact 14 is connected through a conductive lead P2, load L and power lead P3 to the other side of the AC source 18.
  • the bilateral semiconductor D includes first and second power terminals, 20 and 22, connected, respectively, to the same circuit nodes as the first and second switch contacts 12 and 14 of the switch S, thereby placing the power transmitting path of the semiconductor D in parallel with that of the switch S.
  • the semiconductor D further includes a gate terminal 24 which is electrically connected through a coupling resistance R to the contact bar 16 of the switch S.
  • the switch S In the switch S, the contact bar 16 moves to make or break the contacts 12 and 14 substantially simultaneously,
  • the switch S is said to be of the double-make contact type and is to be construed as representative of all types of electric switch structures wherein a double-make or double-break contact action occurs.
  • the bilateral semiconductor D is a solid state switching device which will conduct current through its power terminals 20 and 22 in either direction and can be rendered conductive by a small gate signal applied to the gate electrode 24 or by the voltage across the power terminals exceeding the rated breakover voltage in either direction of conduction. Once rendered conductive, the bilateral semiconductor D will remain in the conductive state until the current flow through the power terminals 20 and 22 thereof drops below a minimum holding value. In AC applications, such a cut-off condition is effected on every half-cycle when the current reverses or if a shunt is placed across the power terminals 20 and 22.
  • the gate terminal 24 does not effect any cut-off function and is only utilized as a means for eifecting the conductive state in the semiconductor D at a desired point in time.
  • the bilateral semiconductor D is in actuality a static AC switch of a type generically known in the art as Triac, a gated, bi-directional thyristor device.
  • the time required to trigger or gate the semiconductor D to its ON state is relatively short, i.e., on the order of a few micro-seconds. Further, such gating can be accomplished by an applied voltage of either positive or negative polarity at the gate terminal 24.
  • the bilateral semiconductor D acts with such a high relative rate of speed to the contacts 12, 14 and 16 of the switch S as to be substantially an instantaneously responsive device for all practical purposes.
  • Both the mechanical switch S and the bilateral semiconductor D can be included in an integral structure or modular unit switching means with only two external connections, namely, a first common terminal 26 for the first switch contact 12 and first semiconductor terminal and a second common terminal 28 for the second switch contact 14 and the second semiconductor terminal 22.
  • the switching means 10 is fully operable to control the energization of the load L in a self-protected, double-make contact configuration.
  • the bilateral semiconductor D is shunted through the switch S across the common terminals 26 and 28 of the switching means 10 and is in a nonconductive or quiescent (OFF) state.
  • the switch bar 16 Upon the formation of these arcs, the switch bar 16 becomes the center tap of a voltage divider comprised of the two are discharge paths which create a potential 4 drop across the first and second common terminals 26 and 28.
  • the voltage appearing at the switch bar 16 is reference either to the first common terminal 26 and first semiconductor terminal 20 or to the second common terminal 28 and second semiconductor terminal 22 for gating purposes depending upon which half-cycle of alternating voltage is present at the time the contacts 12 and 14 were caused to break with the switch bar 16.
  • a gating current is effected through the coupling resistor R and gate terminal 24 and the bilateral semiconductor D is gated ON, effecting a closed shunt path around the switch S and quenching the arcs occasioned by breaking the contacts of the switch S.
  • the bilateral semiconductor D is turned OFF due to the reversal or zero cross-over of the current which drops below that value which sustains conduction in the semiconductor D.
  • the bilateral semiconductor device D may be rendered conductive for a time period in the range of something greater than zero seconds to 8.3 milliseconds, depending upon the point in the current wave at which the bilateral device D is rendered conductive.
  • the relative time period of particular concern, when the contacts of the switch S are to be brought into engagement from the open position, is the bounce time which is measured from the moment such contacts commence to reopen after initial engagement until all contact bounce or chatter has ceased, the bounce time sometimes consuming several milliseconds.
  • the are voltage appearing across the contacts of the switch S has a greater magnitude and higher dv/dt characteristic than does the AC wave from the source 12, resulting in the initation of the arc suppression function in the switching means 10 as previously described herein.
  • Typical circuit values for the foreging switching means 10 comprise the use of a coupling resistance R with a value of ohms (1 watt) and a bilateral semiconductor D comprised of a General Electric Triac type SC46B.
  • the life of the contacts 12, 14 and 16 of the switch S in the switching means 10 and the switching current rating thereof are substantially increased when protected by the bilateral semiconductor D in accordance with the principles of this invention, since the semiconductor D is triggered instantaneously to the conductive (ON) state to shunt the contacts of the switch S before the arc voltages reach such a magnitude as to have adverse efiects on the said contacts. Because of this increased life and rating, the reliability of the switching means 10 of the present invention is markedly increased over that of the simple switch S.
  • switching means 10 is readily apparent in that no external triggering or gating circuitry is needed to trigger the bilateral semiconductor D to a conductive (ON) state.
  • Switching means for selectively connecting a load with an alternating current source comprising:
  • switch means having first and second contact means arranged for relative movement into and out of engagement with one another; one of said contact means being adapted to provide an open circuit connection between a load and an alternating current source and the other of said contact means being adapted to effect a complete circuit connection between such a source and load through said one of said contact means; bilateral semiconductor means having first and second electrode means connected one to each side of said one of said contact means and third electrode means connected with said other of said contact means;
  • said bilateral semiconductor means having a normally non-conductive state and being triggerable to a conductive state in response to harmful electric arcing conditions across said first and second contact means to substantially instantaneously shunt the electric energy of said electric arcing around said contact means;
  • gating circuit means including said first and second contact means, deriving an electric signal from an arcing condition across the said contact means and applying said signal to said third electrode means to substantially instantaneously render said bilateral semiconductor means conductive and shunt said contact means to extinguish said arcing condition.
  • said bilateral semiconductor means comprises a bi-directional, gated thyristor.
  • said gating circuit means further includes electrical resistance means in series with said other of said contact means and said third electrode means.
  • said one of said contact means comprises a spaced pair of double-make contacts and wherein said other of said contact means comprises a conductive switch bar adapted to substantially simultaneously make and break with said double-make contacts;
  • said double-make contacts and said switch bar during an arcing condition therebetween, comprising a voltage divider providing an input voltage to said gating circuit means from said switch bar.
  • said one of said contact means comprises a spaced pair of doublemake contacts and wherein said other of said contact means comprises a conductive switch bar adapted to substantially simultaneously make and break with said double-make contacts;
  • said double-make contacts and said switch bar during an arcing condition therebetween, comprising a voltage divider providing an input voltage to said gating circuit means from said switch bar;
  • said gating circuit means further includes electrical resistance means electrically coupling said conductive switch bar with said third electrode means.
  • said one of said contact means comprises a spaced pair of doublemake contacts and wherein said other of said contact means comprises a conductive switch bar adapted to substantially simultaneously make and break with said double-make contacts;
  • said double make contacts and said switch bar during an arcing condition therebetween, comprising a voltage divider providing an input voltage to said gating circuit means from said switch bar;
  • said gating circuit means further includes electrical resistance means electrically coupling said conductive switch bar with said third electrode means;
  • said bilateral semiconductor means comprises a bi-directional thyristor triode.

Landscapes

  • Keying Circuit Devices (AREA)
  • Driving Mechanisms And Operating Circuits Of Arc-Extinguishing High-Tension Switches (AREA)
  • Rotary Switch, Piano Key Switch, And Lever Switch (AREA)
US766505A 1968-10-10 1968-10-10 Double-make contact switching apparatus with improved alternating current arc suppression means Expired - Lifetime US3539775A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US76650568A 1968-10-10 1968-10-10

Publications (1)

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US3539775A true US3539775A (en) 1970-11-10

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Application Number Title Priority Date Filing Date
US766505A Expired - Lifetime US3539775A (en) 1968-10-10 1968-10-10 Double-make contact switching apparatus with improved alternating current arc suppression means

Country Status (4)

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US (1) US3539775A (enrdf_load_stackoverflow)
DE (1) DE1951031A1 (enrdf_load_stackoverflow)
GB (1) GB1230241A (enrdf_load_stackoverflow)
NL (1) NL6915129A (enrdf_load_stackoverflow)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3912941A (en) * 1974-04-15 1975-10-14 Thomas M Passarella Isolation circuit for arc reduction in a dc circuit
US4296449A (en) * 1979-08-27 1981-10-20 General Electric Company Relay switching apparatus
US4658320A (en) * 1985-03-08 1987-04-14 Elecspec Corporation Switch contact arc suppressor
US4802051A (en) * 1986-06-02 1989-01-31 In Suk Kim Arc-free electromagnetic contactor
US4885654A (en) * 1986-11-28 1989-12-05 Budyko Viktor A Device for arcless switching of electrical circuits
USRE33314E (en) * 1984-10-10 1990-08-28 Mars Incorporated Vending machine power switching apparatus
US8619395B2 (en) 2010-03-12 2013-12-31 Arc Suppression Technologies, Llc Two terminal arc suppressor
US10027109B2 (en) 2012-12-18 2018-07-17 Thermik Geraetebau Gmbh Thermal protection circuit

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3132338A1 (de) * 1981-08-17 1983-03-03 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren zur zuendung von steuerbaren halbleiterventilen, die zur loeschung von schaltlichtboegen elektrischer schaltgeraete dienen

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3309570A (en) * 1966-05-16 1967-03-14 Gen Electric Arcless interrupter
US3401303A (en) * 1965-11-23 1968-09-10 Westinghouse Electric Corp Circuit closing and interrupting apparatus
US3408538A (en) * 1963-10-23 1968-10-29 Sevcon Eng Ltd Control means for electrical apparatus
US3475620A (en) * 1967-12-29 1969-10-28 Atomic Energy Commission Heavy current arcing switch

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3408538A (en) * 1963-10-23 1968-10-29 Sevcon Eng Ltd Control means for electrical apparatus
US3401303A (en) * 1965-11-23 1968-09-10 Westinghouse Electric Corp Circuit closing and interrupting apparatus
US3309570A (en) * 1966-05-16 1967-03-14 Gen Electric Arcless interrupter
US3475620A (en) * 1967-12-29 1969-10-28 Atomic Energy Commission Heavy current arcing switch

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3912941A (en) * 1974-04-15 1975-10-14 Thomas M Passarella Isolation circuit for arc reduction in a dc circuit
US4296449A (en) * 1979-08-27 1981-10-20 General Electric Company Relay switching apparatus
USRE33314E (en) * 1984-10-10 1990-08-28 Mars Incorporated Vending machine power switching apparatus
US4658320A (en) * 1985-03-08 1987-04-14 Elecspec Corporation Switch contact arc suppressor
US4802051A (en) * 1986-06-02 1989-01-31 In Suk Kim Arc-free electromagnetic contactor
US4885654A (en) * 1986-11-28 1989-12-05 Budyko Viktor A Device for arcless switching of electrical circuits
US8619395B2 (en) 2010-03-12 2013-12-31 Arc Suppression Technologies, Llc Two terminal arc suppressor
US9087653B2 (en) 2010-03-12 2015-07-21 Arc Suppression Technologies, Llc Two terminal arc suppressor
US9508501B2 (en) 2010-03-12 2016-11-29 Arc Suppression Technologies, Llc Two terminal arc suppressor
US10134536B2 (en) 2010-03-12 2018-11-20 Arc Suppression Technologies, Llc Two terminal arc suppressor
US10748719B2 (en) 2010-03-12 2020-08-18 Arc Suppression Technologies, Llc Two terminal arc suppressor
US11295906B2 (en) 2010-03-12 2022-04-05 Arc Suppression Technologies, Llc Two terminal arc suppressor
US11676777B2 (en) 2010-03-12 2023-06-13 Arc Suppression Technologies, Llc Two terminal arc suppressor
US10027109B2 (en) 2012-12-18 2018-07-17 Thermik Geraetebau Gmbh Thermal protection circuit

Also Published As

Publication number Publication date
DE1951031A1 (de) 1970-04-16
GB1230241A (enrdf_load_stackoverflow) 1971-04-28
NL6915129A (enrdf_load_stackoverflow) 1970-04-14

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AS Assignment

Owner name: POTTER & BRUMFIELD INC., 200 RICHLAND CREEK DRIVE,

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNOR:AMF INCORPORATED;REEL/FRAME:004508/0653

Effective date: 19851118

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Owner name: POTTER & BRUMFIELD, INC., INDIANA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:POTTER & BRUMFIELD, INC., A DE CORP.;REEL/FRAME:004862/0591

Effective date: 19880119

Owner name: POTTER & BRUMFIELD, INC., 200 SOUTH RICHLAND DRIVE

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNOR:POTTER & BRUMFIELD, INC., A DE CORP.;REEL/FRAME:004862/0591

Effective date: 19880119