US3502930A - Incandescent lamp with a glower made of an alloyed semiconductor material - Google Patents

Incandescent lamp with a glower made of an alloyed semiconductor material Download PDF

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Publication number
US3502930A
US3502930A US616887A US3502930DA US3502930A US 3502930 A US3502930 A US 3502930A US 616887 A US616887 A US 616887A US 3502930D A US3502930D A US 3502930DA US 3502930 A US3502930 A US 3502930A
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glower
semiconductor
lamp
temperature
incandescent lamp
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US616887A
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English (en)
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Mikhail Vladimirovich Fok
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01K—ELECTRIC INCANDESCENT LAMPS
    • H01K13/00—Lamps having an incandescent body which is substantially non-conductive until heated, e.g. Nernst lamp
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01K—ELECTRIC INCANDESCENT LAMPS
    • H01K1/00—Details
    • H01K1/02—Incandescent bodies
    • H01K1/04—Incandescent bodies characterised by the material thereof

Definitions

  • the present invention relates to electric incandescent lamps with semiconductor glowers.
  • incandescent lamps with tungsten filaments have a low luminous efiiciency as the main power of emission of the tungsten filament falls Within the infrared region rather than within the visible one. This takes place because the absorption capacity of tungsten is very small and depends upon the wavelength and because, according to Kirchhoffs law, its luminosity spectrum, when heated, is very close to that of the black body.
  • the first way is characterized in that the maximum in the black body emission spectrum, according to Wiens law, is displaced into the shortwave region as the temperature rises. That is why at relatively low temperatures the portion of visible radiation in the black body will rise. The largest portion of the visible radiation in the black black body spectrum will be when the temperature thereof reaches 7000 K. A further temperature rise will only reduce the portion of the visible radiation due to the speedy rise in the portion of ultraviolet radiation. At 7000 K. no substance can remain solid. Moreover, if it were possible to create a black emitter with such a temperature the portion of visible radiation in the most favorable case would amount to 37% of all emitted power. However, this meets large difficulties connected with the unstability of the glower at high temperatures. At present in lamps with iodine cycle the filament temperature hardly reaches 3200 K.
  • the second way is characterized in that the glower is r made of a substance which is transparent in the infrared spectrum region. According to Kirchhoifs law such a glower emits nothing in this region, i.e. all the radiation lies within the visible (and partially in the ultraviolet) spectrum portion. The luminous efliciency of the lamp with such a glower will be very high. There remains only to develop a substance which would be suitable for the manufacture of such glowers.
  • the pure semiconductor with a wide forbidden gap has a very high resistance at room temperature, it may be heated with a current passing therethrough only in such a case if it has been heated to a sufficiently high temperature. That is why such a lamp requires a powerful starting device which will heat the glower to a temperature of about 1000 K.
  • the manufacture of reasonably pure, thermally stable conductors with sufliciently large dimensions presents problems.
  • An object of the present invention is to eliminate the above-said disadvantages and to provide an electric incandescent lamp with a glower made of a semiconducting material ensuring a sufiiciently high luminous efiiciency, stability of heating conditions and the independent ignition of the lamp beginning from room temperature or one lower one.
  • the material of the glower comprises a semiconductor so alloyed with admixtures that even at such a temperature at which the glower operates, the conductivity of the semiconductor remains admixing.
  • donor or acceptor admixtures with concentrations about 10 to 10 cmr may be used.
  • concentrations about 10 to 10 cmr may be used.
  • to introduce both donor and acceptor admixtures simultaneously is not recommended.
  • the lamp If it is desirable for the lamp to be ignited independently at room temperature or lower temperature without additional heating, such admixtures are employed which will contribute to levels in the semiconductor not deeper than 0.5 ev. from the conduction band for donor admixtures or from the valence band for the acceptor ones. If independent ignition is required the admixtures are to be taken which can provide deeper levels, say, to 0.3 ev.
  • alloyed Carborundum For the material of a glower use may be made of alloyed Carborundum. Alloyed with nitrogen or phosphorus it will ensure the independent ignition of the lamp. As alloying admixtures, aluminium and boron may be also used.
  • the lamp bulb may be made with double walls on the principle of the Dewar flask. If such a flask is made of glass it may increase the luminous efiiciency to approximately 10%. If it is made of quartz, the luminous efficiency of the lamp may be increased to 20% as against the semiconductor lamp with the usual bulb.
  • FIGS. 1, 2, 3 show glower luminosity spectra of the lamp with a semiconductor glower at different temperatures
  • FIG. 4 is a diagrammatic section taken through an incandescent lamp according to the invention.
  • the abscissae represent the quantum energy h of the radiation and the ordinates-the power '15 of the radiation in arbitrary units.
  • the solid line shows the luminosity spectrum of the semiconductor glower and the dotted line shows the black body spectrum.
  • the luminosity spectrum of the glower made of semiconductor in the infrared region A is marked with inclined shading and the same in the visible region B-with vertical shadmg.
  • FIGS. 1, 2, 3 show successively rising glower temperatures. Comparing these curves one can see that on raising the temperature, the portion of emission falling within the visible region constantly changes and the region of the semiconductor transparency reduces due to reduction of the forbidden gap width as the heating progresses.
  • the short wave boundary C (FIG. 1) being in the visible spectrum portion, the rise in the temperature leads to the more rapid increase in the power of radiation in the visible region as compared with the whole radiated power.
  • the power radiated in the ultraviolet spectrum portion increases far more rapidly, but at temperatures of 3,000 K. it is rather small in absolute value and unessential.
  • the optimal temperature for a glower made of semiconductor material is less than that for the black body.
  • the maximum efficiency of the glower thereby may be higher than that of the black body.
  • the radiation in the semiconductor transparency region is defined by the absorption capacity of the glower in this region.
  • the increase in the absorption leads to the decrease in the efficiency.
  • the maximum efliciency is shifted thereby to more higher temperatures.
  • the glower should be as thin as possible.
  • Calulations show that the role of the glower thickness increases as the semiconductor transparency region expands towards the side of long waves.
  • the absorption capacity is also defined by the nature and concentration of admixtures in the semiconductor. Calculations show that the depth of levels formed by the donor or acceptor admixture should not surpass 0.5 ev. from the appropirate band otherwise the glower emission in the infrared region will prohibitively increase.
  • Hexagonal Carborundum has a width of forbidden gap about 3 ev. Therefore it may be used as a material for the glower.
  • Other materials possessing adequate width of the forbidden gap are aluminum nitride, thorium dioxide, and titanium dioxide.
  • an admixture for Carborundum is boron. If it is desirable that the lamp be ignited independently without additional heating it is necessary that the conductivity of the glower at room temperature be sufliciently high. If the admixture creates levels as deep as 0.3 ev. the lamp will be ignited if the ambient temperature is approximately 0 C. Such a level in the Carborundum may be achieved by the aid of aluminum. If the depth of admixture levels is 0.15 ev., the lamp may be ignited even at 70 C. The levels of such a depth in the Carborundum are created by the aid of nitrogen and phosphorus.
  • the energy losses due to the heat conduction amount to about one half of all the energy applied thereto.
  • a further increase in the luminous efficiency of such an incandescent lamp is possible due to reducing the energy losses stemming from the heat conduction.
  • the lamp glower is placed in a flask, with a double wall with vacuum therebetween, in such a manner as in the Dewar flask, it is possible to decrease the heat losses by 20 to 40. This increases the luminous efiiciency by 10 to 20%.
  • FIG. 4 Such a lamp according to the invention is shown in FIG. 4 wherein a glower 1 of semiconductor material is placed within a vessel having spaced walls 2 with a vacuum established therebetween.
  • a glower made of semiconductor material alloyed with admixtures selected from the group consisting of donor and acceptor admixtures in a concentration of 10 to 10 cm.- and providing in said semiconductor material energy levels not deeper than 0.5 electron volt.
  • a glower made of Carborundum alloyed with phosphorus.
  • a glower made of Carborundum alloyed with nitrogen and phosphorus.
  • a glower made of Carborundum alloyed with aluminum.
  • An electric incandescent lamp comprising a vessel with spaced walls defining a vacuum therebetween, a glower in said vessel made of a semiconductor material alloyed with admixtures selected from the group consisting of donor and acceptor admixtures in concentrations of 10 to 10 cm. and providing in said semiconductor material energy levels not deeper than 0.5 electron volt.
  • An electric incandescent lamp in which the donor and acceptor admixtures provide 2,784,284 3/1957 Zunick 313-334 X in said semiconductor energy levels of 0.3 electron volt.
  • 2,870,520 1/1959 Desvignes 313-334 X 2,923,849 2/1960 Rees 313-311 References JOHN W. HUCKERT, Primary Examiner UNITED STATES PATENTS 5 ANDREW J. JAMES, Assistant Examiner 1,148,184 7/1915 Mott 313-311 1,401,510 12/1921 Baumhauer 313-218 X US. Cl. X.R.

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US616887A 1967-02-06 1967-02-17 Incandescent lamp with a glower made of an alloyed semiconductor material Expired - Lifetime US3502930A (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
NL6701782A NL6701782A (fi) 1967-02-06 1967-02-06
US61688767A 1967-02-17 1967-02-17
GB7944/67A GB1127956A (en) 1967-02-06 1967-02-20 Electric incandescent lamp
DE1967F0051770 DE1589157B2 (de) 1967-02-06 1967-03-09 Elektrische gluehlampe
FR103091A FR1524444A (fr) 1967-02-06 1967-04-18 Lampe électrique à incandescence

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US3502930A true US3502930A (en) 1970-03-24

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US616887A Expired - Lifetime US3502930A (en) 1967-02-06 1967-02-17 Incandescent lamp with a glower made of an alloyed semiconductor material

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US (1) US3502930A (fi)
DE (1) DE1589157B2 (fi)
FR (1) FR1524444A (fi)
GB (1) GB1127956A (fi)
NL (1) NL6701782A (fi)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS476770U (fi) * 1971-02-15 1972-09-22
JPS5019366U (fi) * 1973-06-15 1975-03-04
WO1996039720A1 (en) * 1995-06-06 1996-12-12 Purdue Research Foundation Incandescent light energy conversion with reduced infrared emission

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI101911B1 (fi) * 1993-04-07 1998-09-15 Valtion Teknillinen Sähköisesti moduloitava terminen säteilylähde ja menetelmä sen valmistamiseksi

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1148184A (en) * 1913-06-06 1915-07-27 Nat Carbon Co Electric-arc lamp.
US1401510A (en) * 1917-11-13 1921-12-27 Patent Treuhand Ges Fuer Elect Electric glow-lamp
US2005897A (en) * 1933-09-27 1935-06-25 Westinghouse Electric & Mfg Co Electrode for a vapor electric device and method of constructing the same
US2784284A (en) * 1954-11-16 1957-03-05 Gen Electric Mounting for resistor
US2870520A (en) * 1954-03-02 1959-01-27 Lab Electroniques Et De Physiq Radiation-producing device
US2923849A (en) * 1958-07-10 1960-02-02 Gen Railway Signal Co Lightning arrestor

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1148184A (en) * 1913-06-06 1915-07-27 Nat Carbon Co Electric-arc lamp.
US1401510A (en) * 1917-11-13 1921-12-27 Patent Treuhand Ges Fuer Elect Electric glow-lamp
US2005897A (en) * 1933-09-27 1935-06-25 Westinghouse Electric & Mfg Co Electrode for a vapor electric device and method of constructing the same
US2870520A (en) * 1954-03-02 1959-01-27 Lab Electroniques Et De Physiq Radiation-producing device
US2784284A (en) * 1954-11-16 1957-03-05 Gen Electric Mounting for resistor
US2923849A (en) * 1958-07-10 1960-02-02 Gen Railway Signal Co Lightning arrestor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS476770U (fi) * 1971-02-15 1972-09-22
JPS5019366U (fi) * 1973-06-15 1975-03-04
WO1996039720A1 (en) * 1995-06-06 1996-12-12 Purdue Research Foundation Incandescent light energy conversion with reduced infrared emission
US5814840A (en) * 1995-06-06 1998-09-29 Purdue Research Foundation Incandescent light energy conversion with reduced infrared emission

Also Published As

Publication number Publication date
DE1589157B2 (de) 1976-12-02
DE1589157A1 (de) 1970-04-09
NL6701782A (fi) 1968-08-07
GB1127956A (en) 1968-09-25
FR1524444A (fr) 1968-05-10

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