US3334968A - Method for synthetically making diamond - Google Patents
Method for synthetically making diamond Download PDFInfo
- Publication number
- US3334968A US3334968A US291464A US29146463A US3334968A US 3334968 A US3334968 A US 3334968A US 291464 A US291464 A US 291464A US 29146463 A US29146463 A US 29146463A US 3334968 A US3334968 A US 3334968A
- Authority
- US
- United States
- Prior art keywords
- particles
- graphite
- diamond
- mesh
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 239000010432 diamond Substances 0.000 title claims description 47
- 229910003460 diamond Inorganic materials 0.000 title claims description 45
- 238000000034 method Methods 0.000 title claims description 40
- 239000002245 particle Substances 0.000 claims description 53
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 48
- 229910002804 graphite Inorganic materials 0.000 claims description 47
- 239000010439 graphite Substances 0.000 claims description 47
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 38
- 239000000843 powder Substances 0.000 claims description 34
- 229910052742 iron Inorganic materials 0.000 claims description 19
- 229910017052 cobalt Inorganic materials 0.000 claims description 18
- 239000010941 cobalt Substances 0.000 claims description 18
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 16
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 8
- 239000011651 chromium Substances 0.000 claims description 8
- 229910052715 tantalum Inorganic materials 0.000 claims description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 8
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- 239000010937 tungsten Substances 0.000 claims description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229910052720 vanadium Inorganic materials 0.000 claims description 6
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 6
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 5
- 229910052758 niobium Inorganic materials 0.000 claims description 5
- 239000010955 niobium Substances 0.000 claims description 5
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 52
- 229910052759 nickel Inorganic materials 0.000 description 26
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 238000006243 chemical reaction Methods 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 10
- 239000002923 metal particle Substances 0.000 description 8
- 238000003786 synthesis reaction Methods 0.000 description 8
- UFGZSIPAQKLCGR-UHFFFAOYSA-N chromium carbide Chemical compound [Cr]#C[Cr]C#[Cr] UFGZSIPAQKLCGR-UHFFFAOYSA-N 0.000 description 7
- 229910003470 tongbaite Inorganic materials 0.000 description 7
- 239000011541 reaction mixture Substances 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 4
- 229910052748 manganese Inorganic materials 0.000 description 4
- 239000011572 manganese Substances 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229910000531 Co alloy Inorganic materials 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- -1 manganese carbides Chemical class 0.000 description 2
- 229910052762 osmium Inorganic materials 0.000 description 2
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052903 pyrophyllite Inorganic materials 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 2
- INZDTEICWPZYJM-UHFFFAOYSA-N 1-(chloromethyl)-4-[4-(chloromethyl)phenyl]benzene Chemical compound C1=CC(CCl)=CC=C1C1=CC=C(CCl)C=C1 INZDTEICWPZYJM-UHFFFAOYSA-N 0.000 description 1
- QIJNJJZPYXGIQM-UHFFFAOYSA-N 1lambda4,2lambda4-dimolybdacyclopropa-1,2,3-triene Chemical compound [Mo]=C=[Mo] QIJNJJZPYXGIQM-UHFFFAOYSA-N 0.000 description 1
- 101150114464 ATRN gene Proteins 0.000 description 1
- 241000501754 Astronotus ocellatus Species 0.000 description 1
- 229910000975 Carbon steel Inorganic materials 0.000 description 1
- 229910039444 MoC Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000010962 carbon steel Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 150000002843 nonmetals Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
- B01J3/062—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0605—Composition of the material to be processed
- B01J2203/061—Graphite
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/065—Composition of the material produced
- B01J2203/0655—Diamond
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0675—Structural or physico-chemical features of the materials processed
- B01J2203/068—Crystal growth
Definitions
- the present invention relates to improvements in or relating to a method for synthetically making diamond.
- a metal catalyst selected from the class consisting of iron, cobalt, nickel, rhodium, ruthenium, palladium, osmium, iridium, chromium, tantalum and manganese
- I provide a method for synthetically making diamond wherein a mixture of particles of graphite and particles of a metal selected from the group consisting of iron, nickel and cobalt together with fine powders of the carbide of a metal selected from the group consisting of titanium, vanadium, molybdenum, tantalum, niobium, tungsten, chromium and manganese is subjected to a pressure of from about 75,500 to about 75,000 atmospheres at a temperature of from about 1,200 to about 1,600 C., the contact of the graphite with the metal particles being inhibited by the presence of the fine powders of the metal carbide.
- FIG. 1 is a graph showing the relation between the grain size of nickel particles and the pressure required for synthesis of the diamond and also the relation between the grain size of the nickel particles and the pressure powders of carbide are used;
- FIG. 2 is a graph showing the relation between the temperatures and the pressures which are used in the practice of the method of present invention
- FIG. 3 is an enlarged, sectional view of the reaction chamber in apparatus which may be used in the practice of the method of present invention.
- the line A shows the relation between the grain size of nickel particles and the pressure required for the synthesis of the diamond
- the line B shows the relation when fine powdered chromium carbide is added.
- the pressure required for the synthesis of diamond becomes low as the grain size of the nickel particles becomes large, and the pressure required is lower when the fine powder of chromium carbide is added.
- the line AB is the thermodynamic pressure-temperature equilibrium line between diamond and graphite
- the region between the line AB and the line CD is the diamond and graphite coexisting region
- the region in the triangle LMN shows the pressure and temperature ranges which can be used in the practice of the method of present invention. It may be observed in FIG. 2 that the diamond can be synthesized under a pressure of less than 75,000 atmosphere in the method of present invention.
- 1 and 2 are pistons made of tungsten carbide-cobalt alloy containing 5% Co each of which is tapered at an angle of 27 from the vertical and has a face diameter of 15 mm.
- 3 is a ring made of tungsten carbide-cobalt alloy containing 6% Co which is applied with pressure and which has an inner diameter of 22 mm.
- 4 is a cylinder which is made of well baked magnesia which has a porosity of about 10% and an inner diameter of 15 mm.
- 5 and 6 are upper and lower rings made of annealed carbon steel.
- 7 and 8 are insulating plates made of pyrophyllite.
- 9 and 10 are conductors made of iron or nickel.
- 11 is a reaction mixture to be treated.
- 12 is an insulating cylinder made of pyrophyllite.
- 13 and 14 are graphite plates each of which covers one end of the insulating cylinder 12.
- 15 and 16 are insulating gaskets. Pressure is applied to the reaction mixture 11 by the pistons 1 and 2. Heating is effected by passing an electric current through 1, 5, 9, 13, 11, 14, 10, 6 and 2 in the order given.
- the grain size of the iron, nickel and cobalt particles which may be used in the method of present invention is preferably larger than at least mesh, normally larger than 50 mesh, specially about 20 mesh, but it is suitable to use metal particles having a grain size larger than the above mesh when the size of the reaction chamber becomes large.
- the grain size of the powders of titanium, vanadium, molybdenum, tantalum, niobium, tungsten, chromium and manganese carbides which may be used in the method of present invention is preferably smaller than at least mesh, normally smaller than 200 mesh, specially about 325 mesh.
- the particle size of the graphite which is used in the method of present invention is preferably in the range of from the size of the metal particles to that of the carbide powders and is normally from about 40 to about 100 mesh.
- said metal particles may be first mixed with the fine carbide powders and then mixed with the graphite particles.
- the fine carbide powders and graphite particles may be mixed together first.
- the pressure may be maintained at a pressure of from about 57,500 to about 75,000 atmospheres and temperature may be maintained at a temperature of from about 1,200 to about 1,600 C.
- the theoretical reason for which the conversion into diamond of graphite can be practically effected under the above pressure at the above temperature is unclear, but in fact the diamond can be obtained as shown in the examples hereinafter given.
- the reasons for which the special metal carbide powders are used is that the absorption of carbon by the metal particles may be limited and the synthesis of the diamond may be accelerated by the presence of the carbide powders.
- the carbide powders are not decomposed during the formation of the diamond.
- the rate of conversion of graphite into diamond is fastest when iron particles are used, is medium in the case of nickle particles and is slowest for cobalt particles.
- nickel or cobalt particles When nickel or cobalt particles are used the crystals of diamond obtained are not so good and they are densely coloured. This type of diamond can be suit-ably employed for resin-bonding.
- iron particles when iron particles are used, the crystals of diamond obtained are good and are slightly coloured. This type of diamond can be suitably employed for metalbonding.
- particles of iron, nickel or cobalt instead of particles of iron, nickel or cobalt, particles of iron, nickel or cobalt alloyed with non-metals, for example carbon, silicon or phosphorus may be used.
- the conversion of graphite into diamond is effected by maintaining the temperature in the central portion of reaction mixture at a temperature which is nearest to the temperature at which the conversion can'be effected and maintaining the operating pressure at a pressure which corresponds to the former temperature in the ranges of temperature and pressure which are used in the present invention, and then by gradually increasing the temperature in the central portion of reaction mixture in the temperature range of from about 300 to 500 C.
- the conversion is firstly effected in the central portion of reaction mixture to obtain diamonds and is progressively effected towards the outer portions of the reaction mixture to progressively obtain diamond formation without the occurrence of the reverse-conversion of diamond into graphite. Therefore the diamond can be synthesized in. high yield with the employment of lower pressure.
- Example I 500 mg. of nickel particles of 20-30 mesh, 100 mg. of chromium carbide powders of smaller than 325 mesh and 300 mg. of graphite of 100 mesh were mixed. The mixture was charged into the cylinder 12 and the cylinder 12 was sealed with graphite plates 13 and 14. This cylinder was placed as shown in FIG. 3. When the mixture was heated at the following temperatures under the following pressures, the yields of diamonds were as follows:
- Example 2 The procedure of Example 1 was repeated with the exception that 500 mg. of iron particles of 20-30 mesh, mg. of manganese carbide powders of smaller than 325 mesh and 300 mg. of graphite of 100 mesh were used. The results obtained were as follows:
- Example 3 The procedure of Example 1 was repeated with the exception that 500 mg. of cobalt particles of 20-30 mesh, 55 mg. of tungsten carbide powders of smaller than 325 mesh and 300 mg. of graphite of 40-50 mesh were used. The results obtained were as follows:
- Example 4 The procedure of Example 1 was repeated with the exception that 540 mg. of nickel particles of 2030 mesh, 60 mg. of vanadium carbide powders of smaller than 325 mesh and 300 mg. of graphite of 40-50 mesh were used. The results obtained were as follows:
- Example 5 The procedure of Example 1 was repeated with the exception that 540 mg. of nickel particles of 20-30 mesh, 60 mg. of titanium carbide powders of smaller than 325 mesh and 300 mg. of graphite of 40-50 mesh were used. The results obtained were as follows:
- Example 7 The procedure of Example 1 was repeated with the exception that 540 mg. of nickel particles of 20-30 mesh, 60 mg. of molybdenum carbide powders of smaller than 325 mesh 300 mg. of graphite of 40-50 mesh were used. The results obtained were as follows:
- Example 1 The procedure of Example 1 was repeated with the exception that 100 mg. of nickel particles of 20-30 mesh, 100 mg. of chromium carbide particles of 20-30 mesh and 300 mg. of graphite of 100 mesh were used. The results obtained were as follows:
- Example 2 The procedure of Example 1 was repeated with the exception that 500 mg. of nickel powders of 325 mesh, 100 mg. of chromium carbide particles of 20-30 mesh and 300 mg. of graphite of 100 mesh were used. The result obtained was as follows:
- Example 3 The procedure of Example 1 was repeated with the exception that 500 mg. of nickel powders of 200 mesh, 100 mg. of chromium carbide powders of smaller than 325 mesh and 300 mg. of graphite of 100 mesh were used. The result obtained was as follows:
- the method of forming a synthetic diamond which comprises the steps of a forming a mixture consisting essentially of particles of graphite, particles of a metal selected .from the group consisting of iron, nickel and cobalt and the carbide in powder form of a metal selected from the group consisting of titanium, vanadium, molybdenum, tantalum, niobium, tungsten, chromium and manganese, the quantity of said powder being sufficient to inhibit contact between said particles of graphite and particles of metal; subjecting said mixture to a pressure in the range from about 57,500 to about 75,000 atmospheres; and heating said mixture to a temperature in the range from about 1,200 to about 1,600 C. while maintaining said mixture subjected to said pressure.
- step of forming said mixture is performed by first mixing said particles of metal and said powder and thereafter adding said particles of graphite.
- the method of forming a synthetic diamond which comprises the steps of: forming a mixture consisting essentially of particles of graphite having a size in the range from about 40 to about 100 mesh, particles of a metal selected from the group consisting of iron, nickel and cobalt, said particles of metal having a size in the range from about 20 mesh to about 80 mesh, and at least one carbide of a metal selected from the group consisting of titanium, vanadium, molybdenum, tantalum, niobium, tungsten, chromium and manganese, said carbide being in the form of a powder having a particle size in the range from about 7 8 100 mesh to about 325 mesh, said powder being first References Cited mixed separately with one of said types of particles before UNITED STATES PATENTS the other type is introduced into mlxture for inhibiting contact between the particles of the two types; subject- 2,947,609 8/1960 Strong ing said mixture to a pressure in the range from about 5 2,992,900 7/1961 Bovenker
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Carbon And Carbon Compounds (AREA)
- Catalysts (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2742362 | 1962-06-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
US3334968A true US3334968A (en) | 1967-08-08 |
Family
ID=12220677
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US291464A Expired - Lifetime US3334968A (en) | 1962-06-30 | 1963-06-28 | Method for synthetically making diamond |
Country Status (4)
Country | Link |
---|---|
US (1) | US3334968A (en, 2012) |
BE (1) | BE634278A (en, 2012) |
DE (1) | DE1264424B (en, 2012) |
NL (1) | NL294773A (en, 2012) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3436183A (en) * | 1965-07-31 | 1969-04-01 | Tokyo Shibaura Electric Co | Method for preparing diamond crystals |
US3457043A (en) * | 1966-02-04 | 1969-07-22 | Tokyo Shibaura Electric Co | Method of converting carbonaceous material to diamond |
US3949062A (en) * | 1972-12-27 | 1976-04-06 | Leonid Fedorovich Vereschagin | Method for producing polycrystalline diamond aggregates of predetermined shape |
US4085196A (en) * | 1976-03-01 | 1978-04-18 | Vladimir Ivanovich Farafontov | Process for producing synthetic diamonds |
US4089933A (en) * | 1970-01-04 | 1978-05-16 | Institut Fiziki Vysokikh Daleny Akademi Nauk, Sssr | Method of producing polycrystalline diamond aggregates |
EP0014589A1 (en) * | 1979-02-08 | 1980-08-20 | De Beers Industrial Diamond Division (Proprietary) Limited | A method of making diamond particles and metal bond abrasive body produced therewith |
FR2666329A1 (fr) * | 1990-08-30 | 1992-03-06 | Hughes Tool Co | Procede pour former un carbure impregne de diamant. |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1220376A (en) * | 1967-05-04 | 1971-01-27 | Hiroshi Ishizuka | Improvements in or relating to a high temperature high pressure apparatus |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2947609A (en) * | 1958-01-06 | 1960-08-02 | Gen Electric | Diamond synthesis |
US2992900A (en) * | 1958-12-29 | 1961-07-18 | Gen Electric | Method for producing improved diamond crystals |
US3148161A (en) * | 1961-08-09 | 1964-09-08 | Gen Electric | Method for the introduction of boron atoms into diamond crystals |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2947610A (en) * | 1958-01-06 | 1960-08-02 | Gen Electric | Method of making diamonds |
-
0
- BE BE634278D patent/BE634278A/xx unknown
- NL NL294773D patent/NL294773A/xx unknown
-
1963
- 1963-06-28 US US291464A patent/US3334968A/en not_active Expired - Lifetime
- 1963-06-29 DE DEJ23977A patent/DE1264424B/de active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2947609A (en) * | 1958-01-06 | 1960-08-02 | Gen Electric | Diamond synthesis |
US2992900A (en) * | 1958-12-29 | 1961-07-18 | Gen Electric | Method for producing improved diamond crystals |
US3148161A (en) * | 1961-08-09 | 1964-09-08 | Gen Electric | Method for the introduction of boron atoms into diamond crystals |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3436183A (en) * | 1965-07-31 | 1969-04-01 | Tokyo Shibaura Electric Co | Method for preparing diamond crystals |
US3457043A (en) * | 1966-02-04 | 1969-07-22 | Tokyo Shibaura Electric Co | Method of converting carbonaceous material to diamond |
US4089933A (en) * | 1970-01-04 | 1978-05-16 | Institut Fiziki Vysokikh Daleny Akademi Nauk, Sssr | Method of producing polycrystalline diamond aggregates |
US3949062A (en) * | 1972-12-27 | 1976-04-06 | Leonid Fedorovich Vereschagin | Method for producing polycrystalline diamond aggregates of predetermined shape |
US4085196A (en) * | 1976-03-01 | 1978-04-18 | Vladimir Ivanovich Farafontov | Process for producing synthetic diamonds |
EP0014589A1 (en) * | 1979-02-08 | 1980-08-20 | De Beers Industrial Diamond Division (Proprietary) Limited | A method of making diamond particles and metal bond abrasive body produced therewith |
FR2666329A1 (fr) * | 1990-08-30 | 1992-03-06 | Hughes Tool Co | Procede pour former un carbure impregne de diamant. |
US5128080A (en) * | 1990-08-30 | 1992-07-07 | Hughes Tool Company | Method of forming diamond impregnated carbide via the in-situ conversion of dispersed graphite |
Also Published As
Publication number | Publication date |
---|---|
BE634278A (en, 2012) | |
DE1264424B (de) | 1968-03-28 |
NL294773A (en, 2012) |
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