US3322516A - Method of coating p-type germanium with antimony, lead or alloys thereof by electrodeposition and product thereof - Google Patents
Method of coating p-type germanium with antimony, lead or alloys thereof by electrodeposition and product thereof Download PDFInfo
- Publication number
- US3322516A US3322516A US349182A US34918264A US3322516A US 3322516 A US3322516 A US 3322516A US 349182 A US349182 A US 349182A US 34918264 A US34918264 A US 34918264A US 3322516 A US3322516 A US 3322516A
- Authority
- US
- United States
- Prior art keywords
- antimony
- lead
- type germanium
- layer
- alloys
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 title claims description 28
- 229910052787 antimony Inorganic materials 0.000 title claims description 27
- 229910052732 germanium Inorganic materials 0.000 title claims description 24
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims description 24
- 238000000034 method Methods 0.000 title claims description 15
- 229910045601 alloy Inorganic materials 0.000 title claims description 13
- 239000000956 alloy Substances 0.000 title claims description 13
- 239000011248 coating agent Substances 0.000 title claims description 11
- 238000000576 coating method Methods 0.000 title claims description 11
- 238000004070 electrodeposition Methods 0.000 title claims description 7
- IHBMMJGTJFPEQY-UHFFFAOYSA-N sulfanylidene(sulfanylidenestibanylsulfanyl)stibane Chemical compound S=[Sb]S[Sb]=S IHBMMJGTJFPEQY-UHFFFAOYSA-N 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 12
- 239000003792 electrolyte Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 229910000978 Pb alloy Inorganic materials 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- WBTCZEPSIIFINA-MSFWTACDSA-J dipotassium;antimony(3+);(2r,3r)-2,3-dioxidobutanedioate;trihydrate Chemical compound O.O.O.[K+].[K+].[Sb+3].[Sb+3].[O-]C(=O)[C@H]([O-])[C@@H]([O-])C([O-])=O.[O-]C(=O)[C@H]([O-])[C@@H]([O-])C([O-])=O WBTCZEPSIIFINA-MSFWTACDSA-J 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 239000001509 sodium citrate Substances 0.000 description 4
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910001245 Sb alloy Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005868 electrolysis reaction Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000000020 Nitrocellulose Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000004922 lacquer Substances 0.000 description 2
- 229920001220 nitrocellulos Polymers 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000001828 Gelatine Substances 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- ZOMNIUBKTOKEHS-UHFFFAOYSA-L dimercury dichloride Chemical class Cl[Hg][Hg]Cl ZOMNIUBKTOKEHS-UHFFFAOYSA-L 0.000 description 1
- 229920000159 gelatin Polymers 0.000 description 1
- 235000019322 gelatine Nutrition 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000009991 scouring Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/34—Electroplating: Baths therefor from solutions of lead
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/54—Electroplating: Baths therefor from solutions of metals not provided for in groups C25D3/04 - C25D3/50
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/922—Static electricity metal bleed-off metallic stock
- Y10S428/923—Physical dimension
- Y10S428/924—Composite
- Y10S428/926—Thickness of individual layer specified
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/922—Static electricity metal bleed-off metallic stock
- Y10S428/9335—Product by special process
- Y10S428/934—Electrical process
- Y10S428/935—Electroplating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12528—Semiconductor component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12681—Ga-, In-, Tl- or Group VA metal-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12701—Pb-base component
Definitions
- the invention relates to a method of coating p-type germanium with a layer consisting of antimony, lead or alloys thereof by electrodeposition and to the products obtained by this method.
- the invention provides a method by which a complete coating of p-type germanium with the above metals is possible.
- a thin layer of antimony is deposited, also electrolytically, in a thickness of approximately 0.1-1 at that cathode potential at which the saturation current of antimony is reached but at which no gas development occurs.
- a bath consisting of an aqueous solution which contains per liter 15-19 g. of potassium antimonyl tartrate, 15-52 g. of citric acid and 375-195 g. of sodium citrate, at room temperature and at a cathode potential of approximately --850 to 1000 mv. with respect to a standard hydrogen electrode.
- a layer of antimony is to be deposited on p-type germanium, this may be carried out by means of any known electrolyte after the flash of black antimony is deposited.
- the electrolyte used for providing the flash of black antimony may be chosen for the purpose, in which case the cathode potential must be increased by approximately 200 to 3'50 rnv. after the flash is deposited. For depositing thicker layers of antimony, however, this flash-bath is less suitable.
- Strips of germanium having the dimensions 20 x 2 x 0.25 mm. which were of the p-type by doping by means of indium in a quantity of 3.5 atoms per cm. with a resistivity of approximately 1 ohm cm. were sawed out of a single crystal in the [UH-orientation, lapped with Carborundum powder and then pickled for 14 seconds in a mixture of 5 ml. of HNO (d. 1.4), 10 ml. of HF 50%, and 5 ml. of ethanol.
- a thin layer of indium was deposited electrolytically on one of the sides of the strips and a copper wire was connected with silver paste.
- the side of the strip to which the copper wire was connected, and the copper wire itself, were coated with a layer of nitrocellulose lacquer.
- a platinum strip was used as the anode.
- the potential was adjusted via a Haber-Luggin capillary and a saturated calomel electrode by means of a potentiostat.
- the electrolysis was carried out at 20 C.
- the potential was connected at -600 mv. (with respect to a standard hydrogen electrode), then rapidly brought to 850 mv., maintained at this value for one minute, then connected back to -600 mv. and maintained at this value for one minute also. This is shown in the E-i diagram of the drawing.
- the strips were removed from the bath, rinsed, and then a part was coated electrolytically with lead and the remainder with an alloy of lead and antimony.
- the lead bath had the following composition per liter of solution in water.
- the alloying bath contained per liter of solution 3 g. of antimony as antimony fiuoborate or as Sb O and 72 g. of tartaric acid in addition to the above substances.
- the anodes consisted of lead.
- the cathodic current density was 4 a./dm.
- the bath temperature was maintained at 20 C.
- the alloy deposit contained approximately 3% of Sb.
- a method of providing a coating selected from the group consisting of antimony, lead and mutual alloys thereof on p-type germanium comprising first electrolytically depositing on the surface of said p-type germanrum a layer of a thickness of about 0.11,u of black antimony, said electrodeposition being carried out at a cathode potential at which the saturation current of antimony is reached but at which no gas is evolved, and then electrolytically depositing on said layer of black antimony an outer layer of a metal selected from the group consisting of lead, gray antimony and mutual alloys of said metal.
- a method of claim 2 characterized in that the pH of the solution is adjusted at a value above 6.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroplating Methods And Accessories (AREA)
- Electroplating And Plating Baths Therefor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL289818 | 1963-03-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
US3322516A true US3322516A (en) | 1967-05-30 |
Family
ID=19754481
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US349182A Expired - Lifetime US3322516A (en) | 1963-03-05 | 1964-03-03 | Method of coating p-type germanium with antimony, lead or alloys thereof by electrodeposition and product thereof |
Country Status (5)
Country | Link |
---|---|
US (1) | US3322516A (xx) |
DE (1) | DE1273954B (xx) |
FR (1) | FR1383653A (xx) |
GB (1) | GB1064274A (xx) |
NL (1) | NL289818A (xx) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4216071A (en) * | 1977-03-04 | 1980-08-05 | Energietechnik GmbH Studiengesellschaft fur Energie-Umwandlung- , -Fortleitung und -Anwendung | Electrodeposition cell |
US4311769A (en) * | 1979-02-21 | 1982-01-19 | Andreev Oleg M | Mercury contact |
CN101235526B (zh) * | 2007-11-01 | 2010-08-18 | 华侨大学 | 电镀低锑铅合金的镀液及其配制方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2603693A (en) * | 1950-10-10 | 1952-07-15 | Bell Telephone Labor Inc | Semiconductor signal translating device |
CA608181A (en) * | 1960-11-08 | F. Smart Clarence | Antimony plating bath |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2753299A (en) * | 1953-04-23 | 1956-07-03 | Bell Telephone Labor Inc | Electroplating with antimony |
US2817629A (en) * | 1953-10-23 | 1957-12-24 | Gen Motors Corp | Antimony plating bath |
-
0
- NL NL289818D patent/NL289818A/xx unknown
-
1964
- 1964-02-29 DE DEN24534A patent/DE1273954B/de active Pending
- 1964-03-02 GB GB8706/64A patent/GB1064274A/en not_active Expired
- 1964-03-03 US US349182A patent/US3322516A/en not_active Expired - Lifetime
- 1964-03-04 FR FR966064A patent/FR1383653A/fr not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA608181A (en) * | 1960-11-08 | F. Smart Clarence | Antimony plating bath | |
US2603693A (en) * | 1950-10-10 | 1952-07-15 | Bell Telephone Labor Inc | Semiconductor signal translating device |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4216071A (en) * | 1977-03-04 | 1980-08-05 | Energietechnik GmbH Studiengesellschaft fur Energie-Umwandlung- , -Fortleitung und -Anwendung | Electrodeposition cell |
US4311769A (en) * | 1979-02-21 | 1982-01-19 | Andreev Oleg M | Mercury contact |
CN101235526B (zh) * | 2007-11-01 | 2010-08-18 | 华侨大学 | 电镀低锑铅合金的镀液及其配制方法 |
Also Published As
Publication number | Publication date |
---|---|
DE1273954B (de) | 1968-07-25 |
GB1064274A (en) | 1967-04-05 |
FR1383653A (fr) | 1964-12-24 |
NL289818A (xx) |
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