US3184329A - Insulation - Google Patents

Insulation Download PDF

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Publication number
US3184329A
US3184329A US76288A US7628860A US3184329A US 3184329 A US3184329 A US 3184329A US 76288 A US76288 A US 76288A US 7628860 A US7628860 A US 7628860A US 3184329 A US3184329 A US 3184329A
Authority
US
United States
Prior art keywords
layer
film
vacuum
insulating material
evaporated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US76288A
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English (en)
Inventor
Jr Leslie L Burns
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL272593D priority Critical patent/NL272593A/xx
Application filed by RCA Corp filed Critical RCA Corp
Priority to US76288A priority patent/US3184329A/en
Priority to GB42559/61A priority patent/GB978992A/en
Priority to FR881559A priority patent/FR1307784A/fr
Priority to DER31665A priority patent/DE1187286B/de
Priority to JP4559461A priority patent/JPS3811034B1/ja
Application granted granted Critical
Publication of US3184329A publication Critical patent/US3184329A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10—Glass or silica
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/002—Inhomogeneous material in general
    • H01B3/004—Inhomogeneous material in general with conductive additives or conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/008—Other insulating material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H01B3/10—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances metallic oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/80—Material per se process of making same
    • Y10S505/815—Process of making per se
    • Y10S505/818—Coating
    • Y10S505/819—Vapor deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49227—Insulator making

Definitions

  • thin insulator films are useful.
  • a superconducting lead carrying a drive current and an element such as a sheet of superconductor material, a portion of which it is desired to drive from its superconducting to its normal state.
  • a thin insulator film makes the close spacing possible.
  • Capacitor technology is another area in which close spacing between metal layers may be desiredhere for the purpose of increasing capacitance. Thin insulating films make the close spacing possible.
  • Vacuum evaporation is one method for obtaining thin films.
  • the surface on which it is desired to deposit the film is placed in a vacuum chamber.
  • the insulator material to be deposited is placed in a basket or crucible, also in the vacuum chamber and is heated to a high temperature.
  • the evaporated insulator material then deposits on the surface in the form of a film.
  • pin holes Since the film normally occupies the space between two layers of metal, one on which the film is deposited and the other deposited on the other surface of the fihn, the pin holes provide a path through which the deposited metal extends. The metal extending into the pin holes produces a short circuit between metal layers thereby greatly lessening or destroying the insulating property of the film.
  • a film of insulating material is applied in two separate steps. First, a thin layer of the material is evaporated onto the surface it is desired to cover. This evaporation takes place in a vacuum. The pressure is then raised. The pressure is then lowered to that of a vacuum again and a second layer of insulating material is applied over the first. It is found that the film produced in this manner is free of pin holes over a very large area.
  • FIG. 1 is a cross-sectional view of the way in which a thin insulator film on a metal surface is believed to appear during the vacuum evaporation of the insulator film;
  • FIG. 2 is a cross-sectional view of the film of FIG. 1 at atmospheric pressure
  • FIG. 3 is a cross-sectional view of an insulator film according to the present invention.
  • FIG. 4 is a cross-sectional view of two vacuum deposited metal films with an insulator film according to the present invention between.
  • FIG. 1 shows a metal film 10 on which is deposited an insulator film 11.
  • the film is deposited in conven tional manner, that is by vacuum evaporating the insulator material in the manner briefly discussed in the introductory portion of the specification.
  • silicon monoxide SiO
  • the vacuum evaporation is preferably carried out at a rather low pressure such as 10 or 10*- millimeters of mercury. However, any pressure lower than lO millimeters of mercury is satisfactory.
  • the silicon monoxide is located in a crucible within the vacuum chamber and is heated to a temperature of 1290 degrees C. The vacuum evaporation is continued until a desired thickness such as 1,500 Angstroms is reached.
  • the thickness can be determined by timing the heating step or alternatively by allowing the silicon monoxide to simultaneously deposit on the desired substrate and a quartz crystal that is in an electrical oscillating circuit. As the silicon monoxide is deposited on the crystal, the frequency of oscillation is changed. By measuring the frequency change, the evaporation can be terminated when the desired thickness is reached.
  • an insulating layer such as silicon monoxide is first formed by vacuum evaporation in the manner already described at a thickness one-half that of the desired thickness. For example, if it is desired to produce a layer 3,000 Angstroms thick, the
  • first step is to lay down a layer 1,500'Angstroms thick. randomly occurring electrostaticcharges build up on the Then the ambient pressure is increased, preferably to atmospheric pressure. This can be done by permitting air to enter the vacuum chamber. However, this introduces. 1 undesired impurities such as moisture. It is preferred that the ambient pressure he raised by admitting a dry inert than millimeters of mercury. Then a second layer of theinsulator material, that is, silicon monoxide is vacuum evaporated onto the first. The secondlayer also has the gas atlow pressure .as inclusions therein.
  • FIG. 3 shows an insulator film formed according to the presentinvention.
  • the metal layer is shown at 14, the first insulator is shown at 15, and the second insulator layer is shownat 16.
  • the first layer has pin holes 17 and 18.-therein and the second layer 16 has pin holes 19,
  • the pin holes in the two l'ayer s 1 are not aligned and no path exists from upper surface 22 to lower surface 23'. If the two layers are deposited without raising the ambient pressure during the interval between charges are dissipated.
  • the static charges built upinthe insulator layer are the same as those of the insulatorparticles being deposited, these particlesare repelled "from the randomly spaced static charge centers and the result is the pin holes already described.
  • the electrostatic when the ambient pressure is raised to atmospheric pressure; the electrostatic Accordingly, the second layer which is subsequently vacuum evaporated onto the first not repelled from the pin h-oleareas but is instead the deposition steps, the improved film does not result.
  • FIG. .4 illustrates a capacitor construction according to the present invention.
  • Layers 25 and 26- are metal and may be tantalumpor copper, for example, or some other metal, andlayers 27 and 28' together comprise the insulat-ing film formed according to the present invention.
  • the pin holes in each-of layers 27 and 28 are not shown.
  • the combined thickness of layers 27 and 28 may be of the order of 500 Angstrom-s to 1,000 Angstroms. Prior to this invention, it was not possible, so far as Applicant is aware, to obtain large area'vacuum deposited insulator films for capacitors of smaller thickness than 20,000 Angstroms.
  • Silicon monoxide has been given as an example of sulating material which is useful in practicing the present invention. It is, of course, to be understood that the invention isnot limited to this specific material. Siliconmonoxide is especially suitable for superconducting applications as it does not craze at thelow temperatures '(several degrees Kelvin) involved. It is also comm-onlyused for capacitor applications. The process of making the film is exactly the same as described above. Other materials which are suitable in practicing the invention arecalcium fluoride, silicon vdioxide,aluminum oxide, beryllium oxide and magnesium fluoride. 7 j
  • a method of producing a film of insulating material on a surface comprising the steps of evaporating a first layer of an insulating material onto the surface, in
  • a method of producing a film of insulating material on a surface comprising the steps of evaporating -a first layer less than 10,000 Angstroms thick of an insulating material onto the surface, ]at a pressure of lessthan 10- millimeters of mercury; raising the ambient pressure on the evaporated layer to atmospheric pressure; reducing the ambient pressure on the evaporated .layer to a value less than 10 millimeters of mercury; and evaporating a second layer. less than 10,000 Angstroms thick of the insulating material onto the undisturbed. first layer.
  • a method of producing a film of insulating material on a surface comprising the steps .of evaporating a first layer of insulatingfmaterial on a surface, invacuum; admitting a-dry inert gas in order to raise the ambient pressure on the evaporated layer; reducing the ambient pressure on the evaporated layer to that of a vacuum; and evaporating a secondlayer of the insulating material onto thej first.
  • a method of producing a thin silicon monoxide film comprising the steps of:

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Formation Of Insulating Films (AREA)
US76288A 1960-12-16 1960-12-16 Insulation Expired - Lifetime US3184329A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
NL272593D NL272593A (fr) 1960-12-16
US76288A US3184329A (en) 1960-12-16 1960-12-16 Insulation
GB42559/61A GB978992A (en) 1960-12-16 1961-11-28 Insulation
FR881559A FR1307784A (fr) 1960-12-16 1961-12-11 Pellicule isolante
DER31665A DE1187286B (de) 1960-12-16 1961-12-11 Verfahren zur Herstellung einer isolierenden Schicht durch Aufdampfen
JP4559461A JPS3811034B1 (fr) 1960-12-16 1961-12-14

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US76288A US3184329A (en) 1960-12-16 1960-12-16 Insulation

Publications (1)

Publication Number Publication Date
US3184329A true US3184329A (en) 1965-05-18

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ID=22131042

Family Applications (1)

Application Number Title Priority Date Filing Date
US76288A Expired - Lifetime US3184329A (en) 1960-12-16 1960-12-16 Insulation

Country Status (6)

Country Link
US (1) US3184329A (fr)
JP (1) JPS3811034B1 (fr)
DE (1) DE1187286B (fr)
FR (1) FR1307784A (fr)
GB (1) GB978992A (fr)
NL (1) NL272593A (fr)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3414968A (en) * 1965-02-23 1968-12-10 Solitron Devices Method of assembly of power transistors
US3421055A (en) * 1965-10-01 1969-01-07 Texas Instruments Inc Structure and method for preventing spurious growths during epitaxial deposition of semiconductor material
US3432920A (en) * 1966-12-01 1969-03-18 Rca Corp Semiconductor devices and methods of making them
US3461550A (en) * 1965-09-22 1969-08-19 Monti E Aklufi Method of fabricating semiconductor devices
US3617375A (en) * 1969-08-11 1971-11-02 Texas Instruments Inc Electron beam evaporated quartz insulating material process
US3697794A (en) * 1969-03-19 1972-10-10 Rca Corp Photocathode comprising layers of tin oxide, antimony oxide, and antimony
US3934059A (en) * 1974-02-04 1976-01-20 Rca Corporation Method of vapor deposition
US4140548A (en) * 1978-05-19 1979-02-20 Maruman Integrated Circuits Inc. MOS Semiconductor process utilizing a two-layer oxide forming technique
WO1986002386A1 (fr) * 1984-10-09 1986-04-24 Centre National De La Recherche Scientifique Procede de formation par depot sous basse pression d'une couche de materiau isolant sur un substrat et produit obtenu

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2140460B (en) * 1983-05-27 1986-06-25 Dowty Electronics Ltd Insulated metal substrates

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB580137A (en) * 1943-07-03 1946-08-28 Kodak Ltd Improvements in the production of light reflecting layers
US2593829A (en) * 1949-01-13 1952-04-22 Bayer Ag Electrical capacitor and foil therefor
US2734478A (en) * 1956-02-14 Copper
US2840489A (en) * 1956-01-17 1958-06-24 Owens Illinois Glass Co Process for the controlled deposition of silicon dihalide vapors onto selected surfaces
US2903780A (en) * 1952-08-19 1959-09-15 Int Standard Electric Corp Manufacture of electrical capacitors
US2930951A (en) * 1957-07-08 1960-03-29 Gen Electric Electrical capacitor
US2932588A (en) * 1955-07-06 1960-04-12 English Electric Valve Co Ltd Methods of manufacturing thin films of refractory dielectric materials
US3025441A (en) * 1958-09-19 1962-03-13 Gen Electric Electrical capacitor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB620405A (en) * 1946-04-23 1949-03-24 Alexander Frederic Fekete Improvements in or relating to compact electric condensers

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2734478A (en) * 1956-02-14 Copper
GB580137A (en) * 1943-07-03 1946-08-28 Kodak Ltd Improvements in the production of light reflecting layers
US2593829A (en) * 1949-01-13 1952-04-22 Bayer Ag Electrical capacitor and foil therefor
US2903780A (en) * 1952-08-19 1959-09-15 Int Standard Electric Corp Manufacture of electrical capacitors
US2932588A (en) * 1955-07-06 1960-04-12 English Electric Valve Co Ltd Methods of manufacturing thin films of refractory dielectric materials
US2840489A (en) * 1956-01-17 1958-06-24 Owens Illinois Glass Co Process for the controlled deposition of silicon dihalide vapors onto selected surfaces
US2930951A (en) * 1957-07-08 1960-03-29 Gen Electric Electrical capacitor
US3025441A (en) * 1958-09-19 1962-03-13 Gen Electric Electrical capacitor

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3414968A (en) * 1965-02-23 1968-12-10 Solitron Devices Method of assembly of power transistors
US3461550A (en) * 1965-09-22 1969-08-19 Monti E Aklufi Method of fabricating semiconductor devices
US3421055A (en) * 1965-10-01 1969-01-07 Texas Instruments Inc Structure and method for preventing spurious growths during epitaxial deposition of semiconductor material
US3432920A (en) * 1966-12-01 1969-03-18 Rca Corp Semiconductor devices and methods of making them
US3697794A (en) * 1969-03-19 1972-10-10 Rca Corp Photocathode comprising layers of tin oxide, antimony oxide, and antimony
US3617375A (en) * 1969-08-11 1971-11-02 Texas Instruments Inc Electron beam evaporated quartz insulating material process
US3934059A (en) * 1974-02-04 1976-01-20 Rca Corporation Method of vapor deposition
US4140548A (en) * 1978-05-19 1979-02-20 Maruman Integrated Circuits Inc. MOS Semiconductor process utilizing a two-layer oxide forming technique
WO1986002386A1 (fr) * 1984-10-09 1986-04-24 Centre National De La Recherche Scientifique Procede de formation par depot sous basse pression d'une couche de materiau isolant sur un substrat et produit obtenu
FR2575766A1 (fr) * 1984-10-09 1986-07-11 Centre Nat Rech Scient Procede de formation, sous basse pression, d'une couche de materiau isolant de qualite electronique sur un substrat

Also Published As

Publication number Publication date
FR1307784A (fr) 1962-10-26
DE1187286B (de) 1965-02-18
NL272593A (fr)
JPS3811034B1 (fr) 1963-07-03
GB978992A (en) 1965-01-01

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