US3063886A - Boron oxide-lead oxide etchant and etching process - Google Patents
Boron oxide-lead oxide etchant and etching process Download PDFInfo
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- US3063886A US3063886A US33369A US3336960A US3063886A US 3063886 A US3063886 A US 3063886A US 33369 A US33369 A US 33369A US 3336960 A US3336960 A US 3336960A US 3063886 A US3063886 A US 3063886A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/26—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on ferrites
- C04B35/2675—Other ferrites containing rare earth metals, e.g. rare earth ferrite garnets
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
- C04B41/5338—Etching
- C04B41/5361—Etching with molten material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
- H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
- H01F1/12—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials
- H01F1/34—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials non-metallic substances, e.g. ferrites
- H01F1/342—Oxides
- H01F1/344—Ferrites, e.g. having a cubic spinel structure (X2+O)(Y23+O3), e.g. magnetite Fe3O4
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/24—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids
- H01F41/28—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids by liquid phase epitaxy
Definitions
- This invention relates to a method for etching single crystals of garnet, spinels, orthoferrites and corundum and to the novel etchant employed.
- this invention is directed to the use of a boron oxide-lead oxide mixture as an ctchant to supplement the usual mechanical polishing procedures for the materials discussed above.
- the resonance lines of single crystal material are much narrower than those found in the polycrystalline mate-rial, this property forming the basis for the types of microwave devices described in copending applications Serial Number 778,352, filed December 5, 1958, now United States iatent 3,016,495, and Serial Number 774,172, filed November 17, 1958, now United States Patent 3,013,229.
- the practice of this invention results in substantial narrowing of line width in these materials as well as removal of strain, thus, permitting observance of strain-free domain patterns. Removal of strained surface from non magnetic crystalline material may achieve other desiderata. in corundum, of interest as a host lattice material for maser use, the purpose may be primarily improvement of energy transmission or reflection at the surface. Other objectives are known to those skilled in the art.
- the novel etching procedure is carried out by using a boron oxide-lead oxide etchant in which the weight ratio of these ingredients is within the range of 0.9: to 1.1 10 in that order.
- the preferred ratio is 1:10.
- Appreciably increasing the boron oxide content results in the formation of crystalline material of the formula 4PbO-B O and decreasing the boron oxide content results in increasing the viscosity and so narrowing the feasible temperature range.
- Etching is generally conducted at :a temperature in the range of 500800 C., the higher temperatures in the: range being feasible for thicker sections of the order of 10 mils and up, whereas etching with a view to ultimately producing a section of the order of 2 mils in thickness is carried out at temperatures approaching 500 C. Due to the differences in solubility the materials etched have slightly varied preferred etching ranges. However, such variations do not cause pitting over the temeprature range of 500800 C. Temperature ranges Within the 500800 C. limits are desirably employed depending on the solu bility of the material being etched. Thus, fo example, yttrium iron garnet is desirably etched within the range of 550700 C. whereas gadolinium iron garnet is etched effectively at temperatures of the order of 500-700 C. The orthoferrites are generally etched over the temperature range of 525-700 C. and the ferrites from 5507 ⁇ 0 C.
- Applicants etc-hant is generally used for the purpose of obtaining thin plate specimens, however the utility of the etchant is not so limited and it may be used to produce smooth unstrained surfaces of any configuration. It has long been recognized that measured line width of yttrium iron garnet and other magnetic materials decreases as surface uniformity is improved, so resulting in the practice of finer and finer mechanical polishing.
- the etchants of this invention are also useful for obtaining rectangular hysteresis loops.
- the squareness ratio in the hysteresis loop is known to be a function of configuration, being commcnsurate with a hollow configuration such as toroids or rectangular picture frame structures.
- the etchants are useful, not only in producing these configurations but also in assuring absence or removal of strained surfaces which otherwise impair the squareness ratio.
- The. starting ingredients are weighed into a platinum crucible and heated. to complete solution, generally 450 C. It is desirable to include the crystal to be etched with the powder before melting so as to minimize thermal shock and this practice has been followed in the examples set forth below,
- an agitating means is. employed to assure uniform etching of all surfaces and so avoid concentration gradients due to. the otherwise diffusion limited process. Agitating may be brought about by use of an inserted stirrer, or the entire crucible and contents may be, agitated as by a vibrating or rotating platform. Following the agitation the melt temperature is increased to the desired eching temperature, 600700 C., and is maintained at this temperature for the desired time. This desired time period is determined empirically by freezing content and flux and by visual observation of the plate thickness. The etching rate may then be calculated on the basis of this observation.
- the crucible is then removed from the source of heat and the melt allowed to cool.
- a clear, transparent yellow glass with the crystal imbedded therein results.
- the resultant crystal may be examined without removing it from the crucible in order to determine if the desired amount of etching has occurred. If not, the glass may be remelted and etching continued.
- the entire crucible may be placed in a solution of, for example, concentrated nitric acid and water in the proportion of 1:4 by volume. This dissolves the glass and allows the crystal to fall free.
- the nitric acid-Water solution may also be 6.
- the method of etching a single crystal of holmium orthoferrite which comprises heating said material together with a mixture of lead oxide and boron oxide to Table I Temper Ialtulrle of to ing, Example Etehant Crystal Degree Domain Pattern Centi grade 1 H2804 Yttrium iron garnet (YzFe m) 675 Pitting observed. Domain pattern not observed due to strain. 2 NonkOrystal was dn Obscure due to strain.
- the method of etching single crystals of a material consisting essentially of at least one member selected from the group consisting of synthetic garnets, ferrites, corundum and orthoferrites which comprises heating said material together with a mixture of lead oxide and boron oxide to a temperature in the range of 500-800" C., thereby forming a melt, cooling the said melt until the said mixture solidifies with the crystal imbedded therein and dissolving the solidified mixture.
- weight ratio of boron oxide to lead oxide is within the range of 0.9: 10 to 3.
- weight ratio of boron oxide to lead oxide is approximately 1:10.
- the method of etching a single crystal of gadolinium iron garnet which comprises heating said material together with a mixture of lead oxide and boron oxide to a temperature in the range of 500-700" C., thereby forming a melt, cooling the said melt until the said mixture solidifies with the crystal imbedded therein and dissolving the solidified mixture.
Description
Patented Nov. 13, 1962 3,063,886 HURON GXEDE-LEAD (BXTDE ETCHANT ETCHENG PROCESS Joseph P. Rernciiza, Berkeley Heights, NJ, assignor to Bell Telephone Laboratories, incorporated, New York,
N.Y., a corporation of New York No Drawing. Filed June 2, 1960, Ser. No. 33,369 9 Claims. (Cl. 156-47) This invention relates to a method for etching single crystals of garnet, spinels, orthoferrites and corundum and to the novel etchant employed.
More specifically, this invention is directed to the use of a boron oxide-lead oxide mixture as an ctchant to supplement the usual mechanical polishing procedures for the materials discussed above.
The resonance lines of single crystal material are much narrower than those found in the polycrystalline mate-rial, this property forming the basis for the types of microwave devices described in copending applications Serial Number 778,352, filed December 5, 1958, now United States iatent 3,016,495, and Serial Number 774,172, filed November 17, 1958, now United States Patent 3,013,229. The practice of this invention results in substantial narrowing of line width in these materials as well as removal of strain, thus, permitting observance of strain-free domain patterns. Removal of strained surface from non magnetic crystalline material may achieve other desiderata. in corundum, of interest as a host lattice material for maser use, the purpose may be primarily improvement of energy transmission or reflection at the surface. Other objectives are known to those skilled in the art.
Recognizing the obvious advantages of etching a polished surface, the prior art ha done extensive research with a view to finding a suitable etchant for these materials. In general, strong acids, such as sulphuric acid have been used. However, this type of treatment has produced pitting of the surface to such an extent that it produces a crystalline surface, generally inferior to that prepared by careful mechanical polishing.
It has been discovered that a mixture of boron oxide and lead om'de in critical proportions can be used effectively as an etchant for single crystals of garnet, spinel ferrites, orthoferrites and corundum without the attendant problems discussed above.
The novel etching procedure is carried out by using a boron oxide-lead oxide etchant in which the weight ratio of these ingredients is within the range of 0.9: to 1.1 10 in that order. The preferred ratio is 1:10. Appreciably increasing the boron oxide content results in the formation of crystalline material of the formula 4PbO-B O and decreasing the boron oxide content results in increasing the viscosity and so narrowing the feasible temperature range.
Etching is generally conducted at :a temperature in the range of 500800 C., the higher temperatures in the: range being feasible for thicker sections of the order of 10 mils and up, whereas etching with a view to ultimately producing a section of the order of 2 mils in thickness is carried out at temperatures approaching 500 C. Due to the differences in solubility the materials etched have slightly varied preferred etching ranges. However, such variations do not cause pitting over the temeprature range of 500800 C. Temperature ranges Within the 500800 C. limits are desirably employed depending on the solu bility of the material being etched. Thus, fo example, yttrium iron garnet is desirably etched within the range of 550700 C. whereas gadolinium iron garnet is etched effectively at temperatures of the order of 500-700 C. The orthoferrites are generally etched over the temperature range of 525-700 C. and the ferrites from 5507{}0 C.
With regard to the etching of corundum, the same general considerations apply as discussed above for etching garnets, spinels and orthoferrites. However, for economically feasible etching rates the temperatures employed are generally within the range of 700800 C.
Applicants etc-hant is generally used for the purpose of obtaining thin plate specimens, however the utility of the etchant is not so limited and it may be used to produce smooth unstrained surfaces of any configuration. It has long been recognized that measured line width of yttrium iron garnet and other magnetic materials decreases as surface uniformity is improved, so resulting in the practice of finer and finer mechanical polishing. The use of the etchant described herein removes strained sur faces resulting even from such refined techniques and, accordingly, decrease line width, The measurement of line width in magnesium ferrite in spherical configurations has resulted in a measured line width appreciably less than any previously recorded for this material, namely, or" the order of 4 to 5 oersteds as compared to about 14 oersteds previously.
The etchants of this invention are also useful for obtaining rectangular hysteresis loops. The squareness ratio in the hysteresis loop is known to be a function of configuration, being commcnsurate with a hollow configuration such as toroids or rectangular picture frame structures. The etchants are useful, not only in producing these configurations but also in assuring absence or removal of strained surfaces which otherwise impair the squareness ratio.
Examples of the application of the present invention are set forth below. They are intended merely as illustration and it i to be appreciated that the methods described may be varied by one skilled in the art without departing from the spirit and scope of the present inventlon.
The examples are in tabular form for convenience and brevity. Each example in the table is to be considered separately since each set of data was obtained in a separate process. The procedure followed in each of these examples is as follows:
The. starting ingredients are weighed into a platinum crucible and heated. to complete solution, generally 450 C. It is desirable to include the crystal to be etched with the powder before melting so as to minimize thermal shock and this practice has been followed in the examples set forth below, When the material has become molten an agitating means is. employed to assure uniform etching of all surfaces and so avoid concentration gradients due to. the otherwise diffusion limited process. Agitating may be brought about by use of an inserted stirrer, or the entire crucible and contents may be, agitated as by a vibrating or rotating platform. Following the agitation the melt temperature is increased to the desired eching temperature, 600700 C., and is maintained at this temperature for the desired time. This desired time period is determined empirically by freezing content and flux and by visual observation of the plate thickness. The etching rate may then be calculated on the basis of this observation.
The crucible is then removed from the source of heat and the melt allowed to cool. A clear, transparent yellow glass with the crystal imbedded therein results. The resultant crystal may be examined without removing it from the crucible in order to determine if the desired amount of etching has occurred. If not, the glass may be remelted and etching continued.
When the desired state has been reached, the entire crucible may be placed in a solution of, for example, concentrated nitric acid and water in the proportion of 1:4 by volume. This dissolves the glass and allows the crystal to fall free. The nitric acid-Water solution may also be 6. The method of etching a single crystal of holmium orthoferrite which comprises heating said material together with a mixture of lead oxide and boron oxide to Table I Temper Ialtulrle of to ing, Example Etehant Crystal Degree Domain Pattern Centi grade 1 H2804 Yttrium iron garnet (YzFe m) 675 Pitting observed. Domain pattern not observed due to strain. 2 NonkOrystal was dn Obscure due to strain.
Mechanically Polished. 3 BgOg-PbO, 1:10 do 675 Strain free domain 1 pattern observed. 4 BiO3-Pb0, 1:10 Gadolinium iron garnet (GdIlFG50l2)---- 600 Do. 5 3203-1 130, 1:10---- Holmium Orthoferrite (HOF803) 675 D0. 6 BzOs-PbO, 1:10---- Magnesium Ferrite (MgFezOQ- 675 Do. 7 BzOa-PbO, 1:10---- Corundum (A1203) 750 Non-magnetic so no 7 domain pattern; however, surface perfection observed visibly.
While the invention has been described in detail in the foregoing description, the aforesaid is by way of illustration only and is not restrictive in character. The several modifications which will readily suggest themselves to persons skilled in the art, are all considered within the broad scope of this invention, reference being had to the appended claims.
What is claimed is:
1. The method of etching single crystals of a material consisting essentially of at least one member selected from the group consisting of synthetic garnets, ferrites, corundum and orthoferrites which comprises heating said material together with a mixture of lead oxide and boron oxide to a temperature in the range of 500-800" C., thereby forming a melt, cooling the said melt until the said mixture solidifies with the crystal imbedded therein and dissolving the solidified mixture.
2. The method of claim 1 wherein the weight ratio of boron oxide to lead oxide is within the range of 0.9: 10 to 3. The method of claim 1 wherein the weight ratio of boron oxide to lead oxide is approximately 1:10.
' 4. The method of etching a single crystal of yttrium iron garnet which comprises heating said material together with a mixture of lead oxide and boron oxide to a temperature in the range of 5S0-700 C., thereby forming a melt, cooling the said melt until the said mixture solidifies with the crystal imbedded therein and dissolving the solidified mixture.
5. The method of etching a single crystal of gadolinium iron garnet which comprises heating said material together with a mixture of lead oxide and boron oxide to a temperature in the range of 500-700" C., thereby forming a melt, cooling the said melt until the said mixture solidifies with the crystal imbedded therein and dissolving the solidified mixture.
a temperature in the range of GOO-700 (3., thereby forming a melt, cooling the said melt until the said mixture solidifies with the crystal imbedded therein and dissolving the solidified mixture.
7. The method of etching a single crystal of magnesium ferrite which comprises heating said material together with a mixture of lead oxide and boron oxide to a temperature in the range of 600-700 (3., thereby forming a melt, cooling the said melt until the said mixture solidifies with the crystal imbedded therein and dissolving the solidified mixture.
8. The method of etching a single crystal of corundum which comprises heating said material together with a mixture of lead oxide and boron oxide to a temperature in the range of 700800 C., thereby forming a melt, cooling the said melt until the said mixture solidifies with the crystal imbedded therein and dissolving the solidified mixture.
9. The method according to the procedure of claim 1, wherein the said solidified mixture is dissolved by a mixture of nitric acid and water.
References Cited in the file of this patent UNITED STATES PATENTS 2,510,219 Graham June 6, 1950 2,852,352 Landron Sept. 16, 1958 2,957,827 Nielsen Oct. 25, 1960 FOREIGN PATENTS 149,844 Australia Feb. 4, 1953 OTHER REFERENCES Soviet Physics, Solid State, pages 1714 and 1715, Titova- Browing, Monocrystals of Yttrium Ferrite. Translated from Fizika Tverclgo Tel., vol. 1, No. 12, pages 1871- 1873, December 1959 (original article submitted July 14, 1959).
UNITED STATES PATENT OFFICE CERTIFICATE OF CORRECTION Patent N60, 3,063,886 November 13, 1962 Joseph P. Remeika It is hereby certified that error appears in the above numbered patent requiring correction and that the said Letters Patent should read as corrected below.
Columns 3 and 4 in the table fourth column, line 1 thereof for "675" read 275 Signed and sealed this 14th day of May 1963.
(SEAL) Attest:
ERNEST w. SWIDER DAVID LADD Attesting Officer Commissioner of Patents
Claims (1)
1. THE METHOD OF ETCHING SINGLE CRYSTALS OF A MATERIAL CONSISTING ESSENTIALLY OF AT LEAST ONE MEMBER SELECTED FROM THE GROUP CONSISTING OF SYNTHETIC GARNETS, FERRITES, CORUNDUM AND ORTHOFERRITES WHICH COMPRISES HEATING SAID MATERIAL TOGETHER WITH A MIXTURE OF LEAD OXIDE AND BORON OXIDE TO A TEMPERATURE IN THE RANGE OF 500-800*C., THEREBY FORMING A MELT, COOLING THE SAID MELT UNTIL THE SAID MIXTURE SOLIDIFIES WITH THE CRYSTAL IMBEDDED THEREIN AND DISSOLVING THE SOLIDIFIED MIXTURE.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US33369A US3063886A (en) | 1960-06-02 | 1960-06-02 | Boron oxide-lead oxide etchant and etching process |
GB18158/61A GB909230A (en) | 1960-06-02 | 1961-05-18 | Improvements in or relating to the etching of single crystals of garnet, spinels, orthoferrites and corundum |
BE604269A BE604269A (en) | 1960-06-02 | 1961-05-26 | Method of etching homocrystals. |
DEW30081A DE1175138B (en) | 1960-06-02 | 1961-05-30 | Process for etching single crystals |
FR863802A FR1305972A (en) | 1960-06-02 | 1961-06-02 | Process for corroding single crystals of garnet, spinels, orthoferrites and corundum by a corrosive mixture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US33369A US3063886A (en) | 1960-06-02 | 1960-06-02 | Boron oxide-lead oxide etchant and etching process |
Publications (1)
Publication Number | Publication Date |
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US3063886A true US3063886A (en) | 1962-11-13 |
Family
ID=21870031
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US33369A Expired - Lifetime US3063886A (en) | 1960-06-02 | 1960-06-02 | Boron oxide-lead oxide etchant and etching process |
Country Status (4)
Country | Link |
---|---|
US (1) | US3063886A (en) |
BE (1) | BE604269A (en) |
DE (1) | DE1175138B (en) |
GB (1) | GB909230A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3143448A (en) * | 1962-02-21 | 1964-08-04 | Mette Herbert | Photomagnetoelectric cell and method |
US3370963A (en) * | 1965-03-24 | 1968-02-27 | Bell Telephone Labor Inc | Growth of divalent metal aluminates |
US4033743A (en) * | 1974-03-22 | 1977-07-05 | General Electric Company | Chemically polished polycrystalline alumina material |
US20050022721A1 (en) * | 2003-07-31 | 2005-02-03 | Kolis Joseph W. | Acentric, rhombohedral lanthanide borate crystals, method for making, and applications thereof |
US20050022720A1 (en) * | 2003-07-31 | 2005-02-03 | Kolis Joseph W. | Acentric orthorhombic lanthanide borate crystals, method for making, and applications thereof |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2085452B1 (en) * | 1970-04-22 | 1973-10-19 | Anvar |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2510219A (en) * | 1947-09-13 | 1950-06-06 | Linde Air Prod Co | Glossing corundum crystals |
US2852352A (en) * | 1956-05-29 | 1958-09-16 | Corning Glass Works | Method of removing lead borate sealing glasses |
US2957827A (en) * | 1957-04-30 | 1960-10-25 | Bell Telephone Labor Inc | Method of making single crystal garnets |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE828974C (en) * | 1948-10-02 | 1952-01-21 | Degussa | Process for the production of smooth surfaces on objects made of sintered clay |
-
1960
- 1960-06-02 US US33369A patent/US3063886A/en not_active Expired - Lifetime
-
1961
- 1961-05-18 GB GB18158/61A patent/GB909230A/en not_active Expired
- 1961-05-26 BE BE604269A patent/BE604269A/en unknown
- 1961-05-30 DE DEW30081A patent/DE1175138B/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2510219A (en) * | 1947-09-13 | 1950-06-06 | Linde Air Prod Co | Glossing corundum crystals |
US2852352A (en) * | 1956-05-29 | 1958-09-16 | Corning Glass Works | Method of removing lead borate sealing glasses |
US2957827A (en) * | 1957-04-30 | 1960-10-25 | Bell Telephone Labor Inc | Method of making single crystal garnets |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3143448A (en) * | 1962-02-21 | 1964-08-04 | Mette Herbert | Photomagnetoelectric cell and method |
US3370963A (en) * | 1965-03-24 | 1968-02-27 | Bell Telephone Labor Inc | Growth of divalent metal aluminates |
US4033743A (en) * | 1974-03-22 | 1977-07-05 | General Electric Company | Chemically polished polycrystalline alumina material |
US20050022721A1 (en) * | 2003-07-31 | 2005-02-03 | Kolis Joseph W. | Acentric, rhombohedral lanthanide borate crystals, method for making, and applications thereof |
US20050022720A1 (en) * | 2003-07-31 | 2005-02-03 | Kolis Joseph W. | Acentric orthorhombic lanthanide borate crystals, method for making, and applications thereof |
Also Published As
Publication number | Publication date |
---|---|
BE604269A (en) | 1961-09-18 |
DE1175138B (en) | 1964-07-30 |
GB909230A (en) | 1962-10-31 |
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