US2979024A - Apparatus for fusing contacts onto semiconductive bodies - Google Patents

Apparatus for fusing contacts onto semiconductive bodies Download PDF

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US2979024A
US2979024A US754088A US75408858A US2979024A US 2979024 A US2979024 A US 2979024A US 754088 A US754088 A US 754088A US 75408858 A US75408858 A US 75408858A US 2979024 A US2979024 A US 2979024A
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fusing
bodies
apertures
contacts onto
semiconductive
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US754088A
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Pellekaan Leendert
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US Philips Corp
North American Philips Co Inc
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US Philips Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions

Definitions

  • the present invention relates to apparatus for fusing contacts onto semi-conductive devices, more especially but not exclusively for making transistors, crystal diodes and similar semi-conducting bodies.
  • alloy jig consisting of graphite, in which one or more cavities accommodate as many semi-conductive bodies and which is further provided with one or more apertures accommodating the material for the contacts.
  • this material is previously formed into pellets having, for example, a diameter of a few tenths of a millimetre.
  • the fusing operation itself is effected by introducing the alloy jig into an oven in which the required heat treatment is carried out.
  • the alloy jigs are usually made from graphite, since this material can be produced with a high degree of purity which is of paramount importance in this technique. It has further been proposed to make the alloy jigs from ceramic material or stainless steel.
  • the present invention has inter alia for its object to obviate these difficulties.
  • alloy jigs are employed which comprise mica parts in which apertures are provided for maintaining the contact material in position. It has been found that this mica, if properly cleaned, for instance by washing in trichloraethylene, does not give oif impurities, while as a result of its thinness it does not practically impede a satisfactory circulation of gases at the fusing zone. Also, it does not show any tendency to be wetted by the customary alloys.
  • a graphite or chrome-iron plate 1 has a cavity 2 accommodating a semi-conductive body 3, for example a slice of n-conductivity type germanium.
  • the plate 1 can. lies a mica plate 4 with two apertures 5 accommodating two globules 6 consisting of contact material, for example indium.
  • the parts 1 and 4 are clamped together by means of springs 7, made of steel.
  • the alloy jig is introduced into an oven.
  • the alloying is carried out in a usual protective atmosphere, i.e. hydrogen at a temperature of about 500 C. Mica of a normal grade will withstand temperatures up to about 650 C., though better grades might be used to higher temperatures.
  • Apparatus for fusing contact material to impuritysensitive semiconductive bodies comprising support means for receiving and supporting a semiconductive wafer, and
  • a thin mica plate arranged parallel to and mounted on said support and overlying and contacting a surface of said water, said mica plate containing two closely-spaced apertures overlying the wafer surface for receiving and positioning a pair of masses of contact material in engagement with the wafer surface for melting in contact with the said water while confined within the said apertures, said apertures having a diameter less than the thickness of the said mica plate and being spaced apart a distance less than the thickness of the said mica plate.
  • Apparatus for fusing contact material to impuritysensitive semiconductive bodies comprising support means for receiving and supporting a semiconductive wafer, and a thin mica plate having a thickness not greater than 200 microns arranged parallel to and mounted on said support and overlying and contacting a surface of said water, said mica plate containing two closelyespaced apertures overlying the wafer surface for receiving and positioning a pair of masses of contact material in engagement with the wafer surface for melting in contact with the said water while confined within the said apertures, said apertures having a diameter not greater than 200 microns and being spaced apart a distance not greater than 200 microns.

Description

April 11, 1961 L. PELLEKAAN 2,979,024
APPARATUS FOR FUSING CONTACTS ONTO SEMICONDUC'I'IVE BODIES Filed Aug. 8, 1958 INVENTOR LE EN DERT PELLEKAAN BY J i" j u-ra, K
AGENT APPARATUS FGR FUSENG CQNTACTS ONTO SElVIiCONDUCTIVE BODIES Leendert Pellelraan, Eindhoven, Netherlands, assiguor to North American Philips Company, Inc, New York, N.Y., a corporation of Delaware Filed Aug. 8, 1958, Ser. No. 754,088
Claims priority, application Netherlands Aug. 8, 1957 2 Claims. (Cl. 118--500) The present invention relates to apparatus for fusing contacts onto semi-conductive devices, more especially but not exclusively for making transistors, crystal diodes and similar semi-conducting bodies.
For this purpose, it is customary to employ a device hereinafter briefly termed alloy jig, consisting of graphite, in which one or more cavities accommodate as many semi-conductive bodies and which is further provided with one or more apertures accommodating the material for the contacts. Usually, this material is previously formed into pellets having, for example, a diameter of a few tenths of a millimetre. The fusing operation itself is effected by introducing the alloy jig into an oven in which the required heat treatment is carried out. The alloy jigs are usually made from graphite, since this material can be produced with a high degree of purity which is of paramount importance in this technique. It has further been proposed to make the alloy jigs from ceramic material or stainless steel. When using the last mentioned materials it is, however, more difiicult to avoid impurities than when using graphite. However, graphite is coarse-grained relatively to the very small apertures to be made in it. On account of its poor strength, it is moreover necessary for the component parts of the jigs to be made not too small, due to which the composition of the gas is difiicult to control at the zone of fusing.
The present invention has inter alia for its object to obviate these difficulties.
In accordance withthe invention, alloy jigs are employed which comprise mica parts in which apertures are provided for maintaining the contact material in position. It has been found that this mica, if properly cleaned, for instance by washing in trichloraethylene, does not give oif impurities, while as a result of its thinness it does not practically impede a satisfactory circulation of gases at the fusing zone. Also, it does not show any tendency to be wetted by the customary alloys.
In order that the invention may be readily carried into efiect, an example will now be described in detail with reference to the accompanying drawing, which is a sectional view of an alloy jig on an exaggerated scale.
Patented Apr. 11, 1961 A graphite or chrome-iron plate 1 has a cavity 2 accommodating a semi-conductive body 3, for example a slice of n-conductivity type germanium. The plate 1 can. lies a mica plate 4 with two apertures 5 accommodating two globules 6 consisting of contact material, for example indium. The parts 1 and 4 are clamped together by means of springs 7, made of steel. After thus having been filled, the alloy jig is introduced into an oven. The alloying is carried out in a usual protective atmosphere, i.e. hydrogen at a temperature of about 500 C. Mica of a normal grade will withstand temperatures up to about 650 C., though better grades might be used to higher temperatures.
It has been found possible to drill or punch holes having a diameter of at a relative spacing of 50,11. in a mica plate 200/l. thick. When using graphite, such dimensions are practically ruled out.
What is claimed is:
1. Apparatus for fusing contact material to impuritysensitive semiconductive bodies, comprising support means for receiving and supporting a semiconductive wafer, and
a thin mica plate arranged parallel to and mounted on said support and overlying and contacting a surface of said water, said mica plate containing two closely-spaced apertures overlying the wafer surface for receiving and positioning a pair of masses of contact material in engagement with the wafer surface for melting in contact with the said water while confined within the said apertures, said apertures having a diameter less than the thickness of the said mica plate and being spaced apart a distance less than the thickness of the said mica plate.
2. Apparatus for fusing contact material to impuritysensitive semiconductive bodies, comprising support means for receiving and supporting a semiconductive wafer, and a thin mica plate having a thickness not greater than 200 microns arranged parallel to and mounted on said support and overlying and contacting a surface of said water, said mica plate containing two closelyespaced apertures overlying the wafer surface for receiving and positioning a pair of masses of contact material in engagement with the wafer surface for melting in contact with the said water while confined within the said apertures, said apertures having a diameter not greater than 200 microns and being spaced apart a distance not greater than 200 microns.
References Cited in the file of this patent UNITED STATES PATENTS 1,670,700 Weed May 22, 1928 2,506,047 Thomas May 2, 1950 2,798,013 Irmler July 2, 1957 2,835,615 Leinfelder May 20, 1958 2,857,296 Farris Oct. 21, 1958 2,858,246 Pearson Oct. 28, 1958 2,879,188 Strull Mar. 24, 1959 UNITED STA-mas PATENT OFFICE ERTIFICATE 0F CORRECTION Patent NO. 2,979,024
April 11, 1961 Leendert Pellekaan Column 1, line 18, for semi-conductor devices semi-conducting bodies? read SEA L) Attest:
ERNEST W. SWIDER DAVID L. LADD Attesting Officer I Commissioner of Patents USCOMM-DC-
US754088A 1957-08-08 1958-08-08 Apparatus for fusing contacts onto semiconductive bodies Expired - Lifetime US2979024A (en)

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BE (1) BE570141A (en)
CH (1) CH363095A (en)
DE (1) DE1087705B (en)
FR (1) FR1201191A (en)
GB (1) GB884557A (en)
NL (2) NL219744A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3105784A (en) * 1960-12-23 1963-10-01 Merck & Co Inc Process of making semiconductors
US3302612A (en) * 1963-09-12 1967-02-07 Guy R Stutzman Pattern masks and method for making same
US4530861A (en) * 1983-12-19 1985-07-23 General Electric Company Method and apparatus for masking a surface of a blade member
US20070152017A1 (en) * 2005-12-30 2007-07-05 Huth Kenneth J Method for depositing solder material on an electronic component part

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1125084B (en) * 1961-01-31 1962-03-08 Telefunken Patent Method for alloying alloy material on a semiconductor body
GB1001517A (en) * 1961-09-12 1965-08-18 Mullard Ltd Improvements in and relating to jigs for alloying material to semiconductor bodies
GB1074285A (en) * 1963-01-09 1967-07-05 Mullard Ltd Improvements in and relating to semiconductor devices

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1670700A (en) * 1925-04-28 1928-05-22 Gen Electric Method of electric welding
US2506047A (en) * 1946-12-31 1950-05-02 Sylvania Electric Prod Protective device for use in soldering operations
US2798013A (en) * 1955-08-05 1957-07-02 Siemens Ag Method of producing junction-type semi-conductor devices, and apparatus therefor
US2835615A (en) * 1956-01-23 1958-05-20 Clevite Corp Method of producing a semiconductor alloy junction
US2857296A (en) * 1955-08-04 1958-10-21 Gen Electric Co Ltd Methods of forming a junction in a semiconductor
US2858246A (en) * 1957-04-22 1958-10-28 Bell Telephone Labor Inc Silicon single crystal conductor devices
US2879188A (en) * 1956-03-05 1959-03-24 Westinghouse Electric Corp Processes for making transistors

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2796562A (en) * 1952-06-02 1957-06-18 Rca Corp Semiconductive device and method of fabricating same
NL180482B (en) * 1952-08-14 Basf Ag PROCEDURE FOR SEPARATING AND REGENERATION OF RODIUM-CONTAINING CATALYSTS FROM DISTILLATION RESIDUES OBTAINED FROM HYDROFORMYLATIONS.

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1670700A (en) * 1925-04-28 1928-05-22 Gen Electric Method of electric welding
US2506047A (en) * 1946-12-31 1950-05-02 Sylvania Electric Prod Protective device for use in soldering operations
US2857296A (en) * 1955-08-04 1958-10-21 Gen Electric Co Ltd Methods of forming a junction in a semiconductor
US2798013A (en) * 1955-08-05 1957-07-02 Siemens Ag Method of producing junction-type semi-conductor devices, and apparatus therefor
US2835615A (en) * 1956-01-23 1958-05-20 Clevite Corp Method of producing a semiconductor alloy junction
US2879188A (en) * 1956-03-05 1959-03-24 Westinghouse Electric Corp Processes for making transistors
US2858246A (en) * 1957-04-22 1958-10-28 Bell Telephone Labor Inc Silicon single crystal conductor devices

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3105784A (en) * 1960-12-23 1963-10-01 Merck & Co Inc Process of making semiconductors
US3302612A (en) * 1963-09-12 1967-02-07 Guy R Stutzman Pattern masks and method for making same
US4530861A (en) * 1983-12-19 1985-07-23 General Electric Company Method and apparatus for masking a surface of a blade member
US20070152017A1 (en) * 2005-12-30 2007-07-05 Huth Kenneth J Method for depositing solder material on an electronic component part
US7946470B2 (en) * 2005-12-30 2011-05-24 Semx Corporation Method for depositing solder material on an electronic component part using separators

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FR1201191A (en) 1959-12-29
NL219744A (en)
CH363095A (en) 1962-07-15
BE570141A (en)
DE1087705B (en) 1960-08-25
GB884557A (en) 1961-12-13
NL108503C (en)

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