US2978314A - Compositions for electrical resistance films - Google Patents
Compositions for electrical resistance films Download PDFInfo
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- US2978314A US2978314A US569346A US56934656A US2978314A US 2978314 A US2978314 A US 2978314A US 569346 A US569346 A US 569346A US 56934656 A US56934656 A US 56934656A US 2978314 A US2978314 A US 2978314A
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- 239000000203 mixture Substances 0.000 title claims description 26
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 26
- 229910052737 gold Inorganic materials 0.000 claims description 20
- 239000010931 gold Substances 0.000 claims description 20
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 19
- 239000010948 rhodium Substances 0.000 claims description 18
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 18
- 229910052703 rhodium Inorganic materials 0.000 claims description 17
- 229910052763 palladium Inorganic materials 0.000 claims description 13
- 239000013528 metallic particle Substances 0.000 claims description 3
- 239000006069 physical mixture Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 description 14
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 7
- 229910052748 manganese Inorganic materials 0.000 description 7
- 239000011572 manganese Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 230000032683 aging Effects 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000004615 ingredient Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000007873 sieving Methods 0.000 description 2
- 238000010186 staining Methods 0.000 description 2
- MXBCYQUALCBQIJ-RYVPXURESA-N (8s,9s,10r,13s,14s,17r)-13-ethyl-17-ethynyl-11-methylidene-1,2,3,6,7,8,9,10,12,14,15,16-dodecahydrocyclopenta[a]phenanthren-17-ol;(8r,9s,13s,14s,17r)-17-ethynyl-13-methyl-7,8,9,11,12,14,15,16-octahydro-6h-cyclopenta[a]phenanthrene-3,17-diol Chemical compound OC1=CC=C2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1.C1CC[C@@H]2[C@H]3C(=C)C[C@](CC)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 MXBCYQUALCBQIJ-RYVPXURESA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000005588 Kraus reaction Methods 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- 229910000629 Rh alloy Inorganic materials 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- XSKIUFGOTYHDLC-UHFFFAOYSA-N palladium rhodium Chemical compound [Rh].[Pd] XSKIUFGOTYHDLC-UHFFFAOYSA-N 0.000 description 1
- 230000002980 postoperative effect Effects 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/28—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
Definitions
- This invention pertains to electrical resistance materials, and more particularly to materials and compositions for the formationlof precision electrical resistors of the deposited. film type.
- compositions for the production of evaporated metallic film resistances which are characterized by freedom from staining and oxidation at all temperatures and by relativelyhigh stability or consistence of resistance value over long periods of use.
- the compositions of the invention also provide good mechanical hardness, which is of importance where the resistance element is subject to the rubbing friction of a movable contact or the like.
- a further object of the invention is to provide a film resistance functionally integral with an insulating base suchas a disc of glass, ceramic or the like, which shall have the above-noted characteristics by reason of thefact that the deposited resistance involves a homogeneous deposit of the proper relative quantities of different ingredients.
- the wire wound type of device especially in small sizes, requires a resistance increment between steps or turns which results in very coarse resolution when the resistance is to be picked-off by a sliding contact.
- the continuous film resistance element is much to be preferred. While the adoption of such a form overcomes the necessity for forming. the resistance material itself into a wire, it raises other problems such as the difliculty of obtaining homogeneous films free from pinholes and other discontinuities; also the accurate control of-fi'nal resistance hasbeen difficult to achieve.
- the well-known resistance material consisting essentially of 80% nickel and 20% chromium by weight (Nichrome) is an example of a composition which can noble characteristics of freedom from staining and hardness for resistance to abrasionin the case of a j" sliding contact.
- a E It is .tobe notedjthat theproblem is not purely a metal- .lurgical "ene', because even'wh e'n a"s'uitable mixture'or alloy has been found which satisfies these conditions,:.it
- Fig. l is a fragmentary perspective view ofa part of a film resistance having one preferred composition.
- Fig. 2 is a similar view showing 'an alternative com: position, and a f 1 Fig; 3 is a transverse sectional view, with greatly exaggerated vertical scale, showing a combination film used to obtain a desired resistance range.
- compositions of the invention have a their major components the elements palladium and rhodium, together with minor butsignificant quantities 'of the elements manganese, gold and/or germanium.
- the square may be thought of as representing an element of length of the annular or linear deposit whose elemental length dimension is equal to the width of the de posit.
- the actual resistance of the element in ohms is forty times the resistance in ohms per square. This value depends, of course, upon the selected dimensions of the pattern as to width and thickness.
- a first preferred formulation which is suitable for forming resistance films in the general total resistance range from 500 to 50,000 ohms per square is as follows (in Fig. l, 10 designates the insulating disc base and 12 the resistive film):
- the proportions listed represent a mixture (by weight) of 5% manganese and the balance a mixture consisting of 60% palladium and 40% rhodium.
- the finely divided product to be used in the evaporation process either the indicated 60/40 alloy of palladium and rhodium, or the metallic elements themselves, are first ground or otherwise finely divided so that a major portion of the divided material will pass a 400 mesh screen.
- the manganese is also divided to the same fineness, and after sieving through a 400 mesh screen, the proper proportions indicated above are thoroughly mixed together.
- This finely divided and admixed composition is then evaporated in the manner disclosed in the copendiug application above, that is, by continuously feeding the finely ground mixture to a superheated 'element or crucible, at such a rate that the fed material is constantly evaporated without selective distillation of any of the components.
- Films formed with the material of Formula A provide final stabilized resistance values'which are within +10% of the value at the time of completion of evaporation.
- the fixed ratio of rhodium to palladiuni is primarily responsible for this eficct, since films composed of greater amounts of palladium. show decreases in resistance from the time of evaporation to their final value, and greater amounts of rhodium produce increases in the resistance over this period.
- the effect of the manganese is to increase the range of final resistance on theupper end (i.e., for total resistances over 100,000 ohms) by forming thicker films and, as will be pointed out in connection with a further example, gold is preferably used to increase the final resistance range on the lower end (i.e., for total resistances under 1,000 ohms) by forming thinner films.
- the: resistance change of this composition from the time of evaporation to the completion of the post-operative aging step is constantly about +10%, the ultimate resistance of the film can readily be calculated and predicted, and conditions and dimensions correlated to provide very closely a desired total final resistancevalue.
- the aging step is not a factor directly related to the present invention, ina typical case it may involve maintaining the evaporated film (and its support) at a temperature of 650 for Formula B Percent By Atomic Weight Percent Palladium 48 48. 4 Rhodium 32 26. 6 Gold 20 32
- the presence of gold in this example yields final resistance values for typical film dimensions and thicknesses in the range from 50 to SOOohms per. square.
- Films formed from Formula B exhibit a consistent drop of from 20-25% between the completion of evaporation and completion of the aging or stabilization, at 650 F. as described above. As in the case of Formula A, the resistance change is quite consistent and permits the attainment within close limits of the desired final value of resistance.
- the two films 20 and 24 of Formula A may haveresistance values of 500 ohms per'square, from which the resistance of the intermediate gold layer may be calculated from the following, based on ordinary parallel resistance computations; i l
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physical Vapour Deposition (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Description
April 4, 1961 L. B. KRAUSS 2,978,314
COMPOSITIONS FOR ELECTRICAL RESISTANCE FILMS ResIs/z've Film of:
dium 6756 Rhodium 58 73 Manganese 6' '/o Filed March 5, 1956 Resisfiva Fi/n; of:
allaaium- 4a Rhodium 32 "/0 22 30/4 3 24' nob/c a//og r za-noble II/9 /0 Q/j; msubhr g base e B. Kra ass [awreflc INVEN'TOR Lawrence B. Krauss, Rosedale, N.Y., assignor to Fairchild Camera and Instrument Corporation, a corporation of Delaware Filed Mar. 5, 1956, Ser. No. 569,346
2 Claims. (Cl. 75-.5)
-This invention pertains to electrical resistance materials, and more particularly to materials and compositions for the formationlof precision electrical resistors of the deposited. film type.
It is a principal object 'of the invention to provide improved compositions for the production of evaporated metallic film resistances which are characterized by freedom from staining and oxidation at all temperatures and by relativelyhigh stability or consistence of resistance value over long periods of use. The compositions of the invention also provide good mechanical hardness, which is of importance where the resistance element is subject to the rubbing friction of a movable contact or the like.
A further object of the invention is to provide a film resistance functionally integral with an insulating base suchas a disc of glass, ceramic or the like, which shall have the above-noted characteristics by reason of thefact that the deposited resistance involves a homogeneous deposit of the proper relative quantities of different ingredients. 7 A brief review of theproblems encountered-by prior workers in this field will assist in a clear understanding oflthe invention. In the manufacture of small or miniature high precision resistors and otentiometers, the technique utilizing a wire winding has been found entirely unsatisfactory. To obtain high or even moderately high total resistance in a small space, suitable materials available in wire form do not have the required combination ofmechanicalproperties and resistivity. Also, the wire wound type of device, especially in small sizes, requires a resistance increment between steps or turns which results in very coarse resolution when the resistance is to be picked-off by a sliding contact. For these and other reasons, the continuous film resistance element is much to be preferred. While the adoption of such a form overcomes the necessity for forming. the resistance material itself into a wire, it raises other problems such as the difliculty of obtaining homogeneous films free from pinholes and other discontinuities; also the accurate control of-fi'nal resistance hasbeen difficult to achieve. Recent improvementsjn vacuum deposition technique have alleviated this situation'to a great extent, but certain problems' associate-d withthe electrical and thermal characteristics of the film materials have so far found no satisfactory s olutionl The requirements formaterials .suitable for vacuum deposited resistors include the so-called 2,978,314 Patented Apri -l, 1961 2 base. This is because of the "fact that the selected components will not ordinarily, if ever, have evaporation rates such that the mixture will result in a deposited film of the desired composition. In a. patent application filed concurrently'herewith in the name of the present inventor, Serial No. 569,35l,'now abandoned, and assigned to the owner of this application, a technique and apparatus have been disclosed by which multi-component films having the desired characteristics can be deposited upon suitable base'elements. Reference may be made to that application for such disclosure and details, the presentinvention being directed solely to novelcompositions'whose special properties result in resistive 'films having all of the necessary electrical and mechanical characteristics; and in such form that they can be deposited as controlled films by the techniques of said other appli cation.
It may be pointed out, also by way of general background, that the well-known resistance material consisting essentially of 80% nickel and 20% chromium by weight (Nichrome) is an example of a composition which can noble characteristics of freedom from staining and hardness for resistance to abrasionin the case of a j" sliding contact. a E It is .tobe notedjthat theproblem is not purely a metal- .lurgical "ene', because even'wh e'n a"s'uitable mixture'or alloy has been found which satisfies these conditions,:.it
is not in general possible by conventional means to achieve f.
vacuum deposition thereof upon a suitable insulating be fabricated either in the form of fine wires or in the form of a deposited film. The fact that this alloy can be filmed by conventional methods results from the fact that the boiling points of nickel and chromium are sufficiently close that vacuum deposition thereof produces a film having nearly the same composition as the original alloy; However, this material is not suitable for the objects of the present invention because it forms stable films only when the films are extremely thick, and such thick films have resistances whichare too low for most purposes. While stability against oxidation could be obtained by a protective coating or varnish, this would prevent electrical contact and make the film useless for variable resistors. Moreov'er, films of these metals undergo slow continuous oxidation in use which causes their resistance to alter considerably with age, and produces surface discontinuities which are intolerable'when they are used with sliding contacts. a v
I The invention itself will best be understoodv by referring now to the following, detailed disclosure of certain preferred examples of novel compositions, and which are illustrated in the accompanying drawings, in which:
Fig. lis a fragmentary perspective view ofa part of a film resistance having one preferred composition.
Fig. 2 is a similar view showing 'an alternative com: position, and a f 1 Fig; 3 is a transverse sectional view, with greatly exaggerated vertical scale, showing a combination film used to obtain a desired resistance range.
Briefly, .the compositions of the invention have a their major components the elements palladium and rhodium, together with minor butsignificant quantities 'of the elements manganese, gold and/or germanium. For the purposes of the present invention, the physical form of theseingredients is of theessence, of the invention, in that the listed ingredients must be in finely divided form, the same being mixed before use -so that the actual product is -a 1 uniform and finely 'divided mixture of all of the ingredients. Special mention will be made belowofprecautions which must be taken as to-lthe form and relationship of certain of the components{ for example, where the =metal gold enters into the formulation. 1,3. 1 a 'In -the"descriptionlwhich, follows, a resistance; unit expressed asiohms, per. square is used to designate the relative resistance values obtained; l-This unit is cone venient where; the'iresistanceelement is 1a.;deposit of known or constant thickness and hasyconstantwidthg. as is the case of an "annular. constant-width patterngor' ring deposited on a base element, whether or not intended to cooperate with a contact movable lengthwise of the pattern. Since the. effective resistance will be proportional to the length and inversely as the width (the cross-sectional area for constant film thickness is proportional to width), the unit is rational as to dimensions. The square may be thought of as representing an element of length of the annular or linear deposit whose elemental length dimension is equal to the width of the de posit. For purposes of establishing a scale related to actual resistance values, it is mentioned that in the set-up (as to dimensions and film thickness) used herein, the actual resistance of the element in ohms is forty times the resistance in ohms per square. This value depends, of course, upon the selected dimensions of the pattern as to width and thickness.
A first preferred formulation which is suitable for forming resistance films in the general total resistance range from 500 to 50,000 ohms per square (e.g., in the form of an annular deposit upon a base of the order of inch in diameter or less) is as follows (in Fig. l, 10 designates the insulating disc base and 12 the resistive film):
Formula A Percent By Atomic Weight Percent Palladium. 57 59. 3 Rhodiurm. 38 38.1 Manganese. 5 2. 6
It will be seen that the proportions listed represent a mixture (by weight) of 5% manganese and the balance a mixture consisting of 60% palladium and 40% rhodium. In forming the finely divided product to be used in the evaporation process, either the indicated 60/40 alloy of palladium and rhodium, or the metallic elements themselves, are first ground or otherwise finely divided so that a major portion of the divided material will pass a 400 mesh screen. The manganese is also divided to the same fineness, and after sieving through a 400 mesh screen, the proper proportions indicated above are thoroughly mixed together. This finely divided and admixed composition is then evaporated in the manner disclosed in the copendiug application above, that is, by continuously feeding the finely ground mixture to a superheated 'element or crucible, at such a rate that the fed material is constantly evaporated without selective distillation of any of the components. I
Films formed with the material of Formula A provide final stabilized resistance values'which are within +10% of the value at the time of completion of evaporation. The fixed ratio of rhodium to palladiuni is primarily responsible for this eficct, since films composed of greater amounts of palladium. show decreases in resistance from the time of evaporation to their final value, and greater amounts of rhodium produce increases in the resistance over this period. The effect of the manganese is to increase the range of final resistance on theupper end (i.e., for total resistances over 100,000 ohms) by forming thicker films and, as will be pointed out in connection with a further example, gold is preferably used to increase the final resistance range on the lower end (i.e., for total resistances under 1,000 ohms) by forming thinner films.
Since, as has been indicated, the: resistance change of this composition from the time of evaporation to the completion of the post-operative aging step is constantly about +10%, the ultimate resistance of the film can readily be calculated and predicted, and conditions and dimensions correlated to provide very closely a desired total final resistancevalue. While the aging step is not a factor directly related to the present invention, ina typical case it may involve maintaining the evaporated film (and its support) at a temperature of 650 for Formula B Percent By Atomic Weight Percent Palladium 48 48. 4 Rhodium 32 26. 6 Gold 20 32 The presence of gold in this example yields final resistance values for typical film dimensions and thicknesses in the range from 50 to SOOohms per. square. It will be noted that the proportions ofpalladium and rhodium are equivalent, to the use of 80% ofa. 60/40 alloy of these metals. Special note must be taken of the dividing and mixing procedure when gold ispresent, because this metal is very soft and has a tendency to selfweld into agglomerates when used with a vibrating feeder, or to clog the screens through which the mixture is fed. This difficulty is readily overcome by first grinding the gold and the rhodium together, and then sieving the grind to eliminate particles which will not pass the 400 mesh screen. The loss incurred here is minute and has no material elfect on the final product. The finely ground palladium is then weighed and mixed thoroughly with the ground-together particles of gold and rhodium, as in a laboratory mixer or by other conventional mixing 1 procedures.
Films formed from Formula B exhibit a consistent drop of from 20-25% between the completion of evaporation and completion of the aging or stabilization, at 650 F. as described above. As in the case of Formula A, the resistance change is quite consistent and permits the attainment within close limits of the desired final value of resistance.
It is impractical to obtain very low resistance films merely by increasing the amount of gold in Formula 3. For such low values of total resistance, it is preferable to form the film deposit in layers as indicated in Fig. 3. Here, a layer 20 of Formula A is first deposited upon the insulating base 10, and upon this is deposited an intermediate layer 22 of pure gold. Finally, another layer 24 of Formula Ais applied over the gold. Since pure-gold films are quite soft, this arrangement results in complete mechanicalprotection for the intermediate gold layer, the bottom layer of Formula B overcoming the difficulty in adhering pure gold to glass. The use of glass as the insulating base material 10 is preferred, al though other ceramics and like materials can, of course, be employed. For purposes of control and calculation of the desired total composite resistor, the two films 20 and 24 of Formula A may haveresistance values of 500 ohms per'square, from which the resistance of the intermediate gold layer may be calculated from the following, based on ordinary parallel resistance computations; i l
where: R==finalyoverall resistance value in ohms per square R =resistance in ohms per square of underlay ofFormula A a i Since the Formula A layers are both evaporated to 500 ohms per square, the calculation becomes:
250 R2 (2) R: 250+ R,
or I
250R (3) R2 250- R While gold has been mentioned hereinabove specifically as the material used for reducing the resistance of the deposit, similar resistance-modifying results could be obtained, with a sacrifice in nobility and in the minimum resistivity obtainable, by substituting for gold the other good conductivity metals of group I of the periodic table; e.g., silver and copper. To the same extent, the resistivity of the critically proportioned palladium-rhodium base mixture could be raised by adding other metals of group II of the periodic table, such as iron, chromium, nickel and cobalt. Gold and manganese are, however, greatly to be preferred, being characterized by the greatest control effects on raising or lowering the final resistivity.
As stated, the 3 to 2 proportions of palladium to rhodium can be varied with some loss in the degree to Having described the invention by way of specific examples and pointed out the best mode of practicing the same, it is to be understood that variations in noncritical proportions can be accomplished without departing from the spirit and scope of the invention'as defined in the appended claims.
What is claimed is:
1. As a new composition of matter, an intimate physical mixture of finely divided metallic particles consisting of substantially 80 percent total weight of palladium and rhodium in the weight proportions of from which the final stabilized value agrees with the resistance 0 of the freshly deposited film. Thus, a range of these proportions from 5:3 to 7:5 (between 1.67 to 1 and 1.4 to 1) may be tolerated with a resistance change which is negligible for many purposes.
1.4 to 1.67 of palladium to 1 of rhodium, the-balance of the total weight being gold.
2. As a new composition of matter, an intimate physical mixture of finely divided metallic particles consisting of substantially percent total weight of palladium and rhodium in the weight proportions of from 1.4 to 1.67 of palladium to 1 of rhodium, the balance of the total weight being manganese.
References Cited in the file of this patent UNITED STATES PATENTS 1,832,307 Kingsbury Nov. 17, 1931 2,215,723 Jones Sept. 24, 1940 2,300,286 Gwyn Oct. 27, 1942 2,406,172 Smithells Aug. 20, 1946 2,636,819 Streicher Apr. 28, 1953 FOREIGN PATENTS 585,545 Germany Oct. 5, 1933 486,639 Great Britain June 8, 1938 554,630 Great Britain Jan. ll, 1943 556,431 Great Britain Oct. 5, 1943
Claims (1)
1. AS A NEW COMPOSITION OF MATTER, AN INTIMATE PHYSICAL MIXTURE OF FINELY DIVIDED METALLIC PARTICLES CONSISTING OF SUBSTANTIALLY 80 PERCENT TOTAL WEIGHT OF PALLADIUM AND RHODIUM IN THE WEIGHT PROPORTIONS OF FROM 1.4 TO 1.67 OF PALLADIUM TO 1 OF RHODIUM, THE BALANCE OF THE TOTAL WEIGHT BEING GOLD.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US569346A US2978314A (en) | 1956-03-05 | 1956-03-05 | Compositions for electrical resistance films |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US569346A US2978314A (en) | 1956-03-05 | 1956-03-05 | Compositions for electrical resistance films |
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| Publication Number | Publication Date |
|---|---|
| US2978314A true US2978314A (en) | 1961-04-04 |
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| US569346A Expired - Lifetime US2978314A (en) | 1956-03-05 | 1956-03-05 | Compositions for electrical resistance films |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3227544A (en) * | 1963-04-17 | 1966-01-04 | Eaton Mfg Co | Powder metal alloy composition and method for forming wear resistant coatings therewith |
| US3279914A (en) * | 1965-06-08 | 1966-10-18 | Du Pont | Magnetic alloys of manganese, germanium and either or both of palladium and rhodium |
| US3327272A (en) * | 1964-06-22 | 1967-06-20 | Barry J Stern | Negative resistance device |
| US5290371A (en) * | 1992-10-28 | 1994-03-01 | The J. M. Ney Company | Dental alloy and restoration made therewith |
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|---|---|---|---|---|
| US1832307A (en) * | 1925-07-11 | 1931-11-17 | Western Electric Co | Alloy for electrical contacts |
| DE585545C (en) * | 1930-10-21 | 1933-10-05 | Heraeus Gmbh W C | Palladium alloys containing rhodium |
| GB486639A (en) * | 1937-09-10 | 1938-06-08 | Rosenthal Isolatoren Gmbh | An improved method of making high ohmic resistances with low temperature coefficient |
| US2215723A (en) * | 1937-05-03 | 1940-09-24 | Jones William David | Process for manufacturing metal articles |
| US2300286A (en) * | 1941-05-08 | 1942-10-27 | Fansteel Metallurgical Corp | Electrical contact |
| GB554630A (en) * | 1942-01-09 | 1943-07-13 | Mullard Radio Valve Co Ltd | Improvements in or relating to high frequency resistances |
| GB556431A (en) * | 1941-02-11 | 1943-10-05 | Baker & Co | Improvements in or relating to electrical resistance wire |
| US2406172A (en) * | 1942-02-07 | 1946-08-20 | Baker And Co Inc | Platinum or allied metals, or their alloys, and articles made therefrom |
| US2636819A (en) * | 1951-01-31 | 1953-04-28 | Baker & Co Inc | Grain stabilizing metals and alloys |
-
1956
- 1956-03-05 US US569346A patent/US2978314A/en not_active Expired - Lifetime
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1832307A (en) * | 1925-07-11 | 1931-11-17 | Western Electric Co | Alloy for electrical contacts |
| DE585545C (en) * | 1930-10-21 | 1933-10-05 | Heraeus Gmbh W C | Palladium alloys containing rhodium |
| US2215723A (en) * | 1937-05-03 | 1940-09-24 | Jones William David | Process for manufacturing metal articles |
| GB486639A (en) * | 1937-09-10 | 1938-06-08 | Rosenthal Isolatoren Gmbh | An improved method of making high ohmic resistances with low temperature coefficient |
| GB556431A (en) * | 1941-02-11 | 1943-10-05 | Baker & Co | Improvements in or relating to electrical resistance wire |
| US2300286A (en) * | 1941-05-08 | 1942-10-27 | Fansteel Metallurgical Corp | Electrical contact |
| GB554630A (en) * | 1942-01-09 | 1943-07-13 | Mullard Radio Valve Co Ltd | Improvements in or relating to high frequency resistances |
| US2406172A (en) * | 1942-02-07 | 1946-08-20 | Baker And Co Inc | Platinum or allied metals, or their alloys, and articles made therefrom |
| US2636819A (en) * | 1951-01-31 | 1953-04-28 | Baker & Co Inc | Grain stabilizing metals and alloys |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3227544A (en) * | 1963-04-17 | 1966-01-04 | Eaton Mfg Co | Powder metal alloy composition and method for forming wear resistant coatings therewith |
| US3327272A (en) * | 1964-06-22 | 1967-06-20 | Barry J Stern | Negative resistance device |
| US3279914A (en) * | 1965-06-08 | 1966-10-18 | Du Pont | Magnetic alloys of manganese, germanium and either or both of palladium and rhodium |
| US5290371A (en) * | 1992-10-28 | 1994-03-01 | The J. M. Ney Company | Dental alloy and restoration made therewith |
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