US2956160A - Millimeter wave crystal rectifier - Google Patents

Millimeter wave crystal rectifier Download PDF

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Publication number
US2956160A
US2956160A US703700A US70370057A US2956160A US 2956160 A US2956160 A US 2956160A US 703700 A US703700 A US 703700A US 70370057 A US70370057 A US 70370057A US 2956160 A US2956160 A US 2956160A
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US
United States
Prior art keywords
crystal
cartridge
contact
frequency
impedance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US703700A
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English (en)
Inventor
William M Sharpless
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Bell Telephone Laboratories Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL234330D priority Critical patent/NL234330A/xx
Priority to BE572922D priority patent/BE572922A/xx
Application filed by Bell Telephone Laboratories Inc filed Critical Bell Telephone Laboratories Inc
Priority to US703700A priority patent/US2956160A/en
Priority to DEW24454A priority patent/DE1111680B/de
Priority to FR779660A priority patent/FR1215351A/fr
Priority to CH6693158A priority patent/CH366572A/de
Priority to GB39821/58A priority patent/GB899253A/en
Application granted granted Critical
Publication of US2956160A publication Critical patent/US2956160A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D9/00—Demodulation or transference of modulation of modulated electromagnetic waves
    • H03D9/06—Transference of modulation using distributed inductance and capacitance
    • H03D9/0608—Transference of modulation using distributed inductance and capacitance by means of diodes
    • H03D9/0616—Transference of modulation using distributed inductance and capacitance by means of diodes mounted in a hollow waveguide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
    • H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced lines or devices with unbalanced lines or devices
    • H01P5/103—Hollow-waveguide/coaxial-line transitions
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/02—Transference of modulation from one carrier to another, e.g. frequency-changing by means of diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D9/00—Demodulation or transference of modulation of modulated electromagnetic waves
    • H03D9/02—Demodulation using distributed inductance and capacitance, e.g. in feeder lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T403/00—Joints and connections
    • Y10T403/55—Member ends joined by inserted section

Definitions

  • This invention relates to electromagnetic wave devices and more particularly to broad band crystal detectors for use as frequency converters, mixers and demodulators at very short wavelengths.
  • the impedance of the crystal rectifier which is a complex function of frequency, is a characteristic of prime importance. Impedance mismatch at the signal frequency not only results in signal loss due to reflections, but mismatches also affect the intermediate frequency impedance seen at the intermediate frequency terminals. This means that equipment must be designed with adjustments to correct both sisting of' a parallel resistor-capacitor combination in Iseries with an inductor and a resistor, all in parallel with a second capacitor.
  • the usual point contact crystal arrangement is mounted in a symmetrical cartridge type structure of special design in which the conductive end members of thecartridge form built-in compensating impedances that tend to neutralize the impedance variations of the crystal and its contact over a broad frequency band.
  • these end members take the form of conductive cylindrical members each having an annular recess in one end thereof which forms and separates an outer conductive ring from an inner center post. Two such members are spaced and supported by a low loss nonconducting hollow cylinder that surrounds the posts and The crystal element is supported at the end of one of two posts. The second post supports a point contact spring which makes contact with the crystal to form the rectifying junction.
  • the junction so formed has an equivalent circuit con-
  • the equivalent circuit can be reduced to essentially a resistor-capacitor combination.
  • compensating impedances consisting of an inductance and capacitance are formed which, when taken with the equivalent impedances of the crystal, constitute a low-pass filter having the desired bandwidth and impedance level.
  • yIt is, therefore, a further object of the inventionto connect crystal cartridges to electrical signaling circuits in a safe and consistent manner.
  • a pair of parallel spaced spring wires are placed within the recess into which the cylindrical conductive members, which constitute the cartridge ends, are fitted.
  • the spring wires are arranged perpendicular to the axis of the cartridge.
  • At least one of the spring wires isfree'to move radially within"the .recess as the cartridge is inserted.
  • the two'wires makefirm contact alongthe'two sides of each conductive end member.
  • Fig. 1 is a longitudinal cross-sectional view of the crystal cartridge of the present invention
  • Fig. 2 is the equivalent circuit of a point contact crystal rectifier
  • Fig. 3 is the equivalent circuit of the point contact crystal and cartridge of the present invention.
  • Fig. 4 is a clamping insert to be used in conjunction with the crystal cartridge of Fig. 1.
  • Fig. 5 is a cross-sectional view of a complete-crystal cartridge holder as used in conjunction with the crystal of Fig. l and a rectangular waveguide.
  • the crystal diode device is seen to include a point contact rectifier consisting of contact spring I mounted on post 3 and a semiconductor crystal wafer 2 mounted on post 4.
  • a singlecrystal ingot, grown from high purity du Pont silicon doped with 0.02 percent boron may be used to furnish the material for the crystal wafer 2 used in the unit.
  • Slices cut from the ingot are polished and heat treated. Gold is evaporated on the back surface and the slices are diced into squares. These squares are pressed into indentations formed in the end of center post 4 which has previously been tin-plated.
  • the spring contact 1 is made of pure tungsten wire that has been sized by an electrolytic etching process. A short length of this wire is spot-welded on the end of center post 3. The wire is then bent into the S configuration in a forming jig. By an electrolytic process the spring is then cut to the proper length and pointed. In the final assembly of the unit the contact spring is pressed into place until the desired contact is made with the silicon as evidenced by an oscilloscopic display of the voltage current characteristic.
  • the equivalent circuit of the point contact region of a crystal diode is shown in Fig. 2. It consists of a nonlinear barrier layer resistance 15 shunted by a nonlinear barrier layer capacitance 12, the two being in series with a spreading resistance 13 and a contact spring inductance 14. Shunted across the entire network is the Post capacitance 16 consisting of the capacity associated with posts 3 and 4. This capacity may be varied within limits by shaping the ends as shown, for example, by the tapered end of post 3.
  • resistance 15 in parallel with the capacitances l2 and 16.
  • the range of values of resistance 15 and capacitance 12 are determined when contact spring 1 is pressed into place and contact made with the crystal wafer 2. However, they will assume a particular value when in use which is a function of their electrical environment.
  • the input impedance of the crystal rectifier is a function of frequency, and as such, will not lend itself to broad band operation.
  • compensating impedances are incorporated into the cartridge structure in the form of conductive end members 9 and 10, so dimensioned and shaped as to tend to neutralize the frequency sensitive characteristic of the crystal rectifier impedance.
  • the neutralizing impedances include the two annular recesses 5 and 6 which have been cut into end members 9 and 10, respectively, and the circumferential rings 7 and 8 which are consequently formed. Also formed are the posts 3 and 4 mentioned above.
  • the end members 9 and 10 may be constructed out of solid stock, or in parts that are subsequently assembled.
  • center posts 3 and 4 may be made of nickel or some other suitable conductive material, press-fitted into members 9 and 10, or otherwise fixed in final position.
  • the annular recesses 5 and 6 form reentrant sections, which if made small compared to a quarter of a wavelength at the highest frequency at which it is designed ,to operate, constitute inductances which are independent of frequency.
  • the conductive rings 7 and 8 constitute a shunting capacitance whose value is a function of the thickness and spacing of end members 9 and 10, and the dielectric material separating them.
  • a nonconducting thin hollow cylindrical sleeve 11 Surrounding and enclosing center posts 3 and 4 is a nonconducting thin hollow cylindrical sleeve 11, which is received in recesses 5 and 6 and cemented in place. Sleeve 11 protects the point contact crystal and forms a support and spacer for members 9 and 10. Since the dielectric constant of sleeve 11 will influence the value of the shunting capacitance across rings 7 and 8, the choice of material used afiords a convenient way to adjust this capacitance to the desired value.
  • Fig. 3 is a schematic of an approximate equivalent circuit of the complete rectifier unit, including the point contact crystal rectifier and cartridge case. It includes, in addition to resistance 15 and capacitances 12 and 16, the compensating reactances consisting of inductances 17 and 17 and capacitance 18. Inductances 17 and 17' are a measure of the impedance of the reentrant sections 5 and 6 which form a shorted section of transmission line. Capacitance 18 represents the capacitance between the outer rings 7 and 8 and may be varied by the choice of material used in sleeve 11 and the spacing between 7 and 8.
  • the cartridge capacitance 18 may be made equal to the sum of capacitances 16 and 12, forming the well-known constant k type of lowpass filter.
  • the crystal capacitance 12 By including within the filter network the crystal capacitance 12, and eliminating any impedance transformation within the cartridge, the device may now be used at all frequencies below cutoff and will tend to appear substantially as a resistance, independent of frequency.
  • the cartridge may be designed for some specific impedance transformation for special applications, by varying the dimensions and thereby varying the parameters 16, 17, 17 and 18.
  • the design has meaning only insofar as the electrical contacts made with the cartridge, when used, are made at the same places as those for which the equivalent cartridge circuit was designed.
  • inductances 17 and 17 the inductances of the reentrant portions 5 and 6 of end members 9 and 10, are calculated with reference to planes AA and A'A', respectively.
  • Fig. 4 there is shown a clamping insert to be used in conjunction with a crystal cartridge holder to assure proper contact between the latter and the signal system.
  • the clamping insert may comprise a cylindrical block of metal 20, such as brass, through which there is a hole 21 to receive the crystal cartridge.
  • a hole 21 to receive the crystal cartridge.
  • holes 22 and 23 into each of which there is inserted resilient material as, for example, Phosphor bronze wire, to form two spring contacts 24 and 25, which extend into the region of hole 21.
  • the springs are soldered at one end only.
  • a slot 26 is cut in the region below hole 23, and then partially refilled, leaving a hollow region 27 into which spring 25 may move.
  • Two such clamping inserts are provided to clamp both ends of the crystal cartridge. They may be identical inserts but in general they will differ, depending upon the nature of the connecting circuits. The use of such inserts is illustrated in Fig. 5.
  • Fig. 5 shows an illustrative embodiment of a complete cartridge holder as used in conjunction with a conductively bound waveguide 30 and incorporating therein the features of the present invention.
  • the arrangement shown includes a lower portion and an upper portion for holding the crystal cartridge, the latter extending across the narrow dimension of the waveguide to intercept electro-magnctic wave energy propagating therethrough.
  • the lower portion of the holder conductively grounds one end of the carriage and also provides easy access to the cartridge.
  • the upper portion provides means for connecting the other end of the cartridge to a low frequency circuit which, for example, may be an intermediate frequency amplifying system.
  • Both portions of the cartridge holder may be rigidly mounted to the waveguide, as shown in Fig. 5 or means may be provided whereby the unit may be moved transversely to the waveguide to obtain a resistive match to the guide. If the holder can not be moved, matching may be accomplished by reducing the narrow dimension of the waveguide in steps (not shown) until the height of the guide is approximately the same as the height of the cartridge unit.
  • the lower portion of the holder comprises a threaded stub 34, into which a clamping insert 32 is press fit.
  • Clamping insert 32 is similar to the insert shown in Fig. 4 and described in detail above.
  • Stub 34 engages a threaded ring 35 which is rigidly fastened to a wide side 45 of waveguide 30.
  • the cartridge 31 is firmly held by springs 41 and 41' and when fully engaged, stub 34, in conjunction with insert 32, conductively ground the lower end of crystal cartridge 31 to guide wall 45.
  • Cartridge 31 may be readily removed by unscrewing and withdrawing stub 34.
  • the upper portion of the cartridge holder comprises the threaded sleeve 39 to which there is cemented a clamping insert 33 and the insulating ring 40.
  • the cement 42 in addition to holding clamping insert 33 in place, insulates the insert from sleeve 39, which threads into an aperture in the wide side 46 of guide 30.
  • clamping insert 33, and sleeve 39 constitute a high frequency iby pass capacity.
  • plug 36 When fully engaged, plug 36 rests on insulating ring 40, thereby separating sleeve38 from insert 33.
  • Inner conductor 37 of plug 36 extends through insulating ring 40 and insert 33, making contact with the upper end of cartridge 31 by virtue of its contact with the constructed portion 48 of insert 33.
  • the overall distance d from the lower end of constructed region 48 of insert 33 to the lower end of insert 32, is only slightly larger than the overall length of the cartridge.
  • the latter two elements are not required to make intimate contact with the cartridge since the necessary electrical contacts are made by springs 41, 41' and 47, 47'.
  • the springs make positive contact in the same relative position at all times thus assuring that the impedance seen by the wave energy traveling past will not vary as a function of pressure with which plug 36 and stub 34 have been tightened.
  • the reflected impedance proucked by piston 43 in shunt with crystal 31 is very large and essentially all the wave energy incident upon the crystal is absorbed by crystal 31.
  • a microwave circuit component for electromagnetic wave energy proportioned to have a given frequency response when contacted at a predetermined region along an end and means for contacting said component comprising a metal member having a cylindrical aperture therein for receiving said end of said component, a pair of holes extending through said member containing resilient wires, each of said wires passing through a region on opposite sides of said aperture, at least one of said Wires being free to move radially with respect to said aperture, said wires firmly holding said component end and making a positive and reproducible electrical contact between said end and said holder.
  • a nonlinear microwave component for electromagnetic wave energy having a predetermined compensated frequency response comprising in combination a point contact crystal rectifier, a cartridge assembly for said rectifier, a cartridge holder and an electromagnetic wave path, said cartridge assembly comprising a pair of cylindrical conductive members each having an annular recess in one end between a center conductive post and a circumferential conductive ring, said members being received through opposite sides of said wave path, a crystal element supported by one of said posts, a contact element extending from the other of said posts to contact said crystal, said recesses having dimensions coordinated with the remaining parameters of said structure when contacting said structure at a predetermined region of said members to introduce a compensating inductive reactance to electromagnetic wave energy pass ing between facing recesses and impinging upon said crystal, and means for contacting each of said members at said predetermined region comprising two pairs of wires held in fixed relationship with respect to said wave path at said opposite sides of said path, at least one wire in each of said pairs being free to move with respect to the other of said wires, each

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  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Packaging Frangible Articles (AREA)
  • Waveguide Connection Structure (AREA)
US703700A 1957-12-18 1957-12-18 Millimeter wave crystal rectifier Expired - Lifetime US2956160A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
NL234330D NL234330A (xx) 1957-12-18
BE572922D BE572922A (xx) 1957-12-18
US703700A US2956160A (en) 1957-12-18 1957-12-18 Millimeter wave crystal rectifier
DEW24454A DE1111680B (de) 1957-12-18 1958-11-14 Einbauhuelsenanordnung fuer eine Halbleiter-Spitzendiode
FR779660A FR1215351A (fr) 1957-12-18 1958-11-20 Redresseur à cristal pour ondes millimétriques
CH6693158A CH366572A (de) 1957-12-18 1958-12-04 Mikrowelleneinrichtung mit einem Kristalldetektor
GB39821/58A GB899253A (en) 1957-12-18 1958-12-10 Improvements in or relating to electromagnetic wave crystal contact devices and to holders therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US703700A US2956160A (en) 1957-12-18 1957-12-18 Millimeter wave crystal rectifier

Publications (1)

Publication Number Publication Date
US2956160A true US2956160A (en) 1960-10-11

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Application Number Title Priority Date Filing Date
US703700A Expired - Lifetime US2956160A (en) 1957-12-18 1957-12-18 Millimeter wave crystal rectifier

Country Status (7)

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US (1) US2956160A (xx)
BE (1) BE572922A (xx)
CH (1) CH366572A (xx)
DE (1) DE1111680B (xx)
FR (1) FR1215351A (xx)
GB (1) GB899253A (xx)
NL (1) NL234330A (xx)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3010072A (en) * 1958-11-20 1961-11-21 Research Corp Crystal detector assembly
US3135924A (en) * 1960-06-27 1964-06-02 Hazeltine Research Inc Matched coupling apparatus
US3274504A (en) * 1963-03-21 1966-09-20 Philips Corp Micro-wave detector
US3448415A (en) * 1968-08-01 1969-06-03 Bell Telephone Labor Inc Tunable crystal diodes
US3515955A (en) * 1966-10-27 1970-06-02 Semikron G Fur Gleichrichtelba Semiconductor arrangement
US3611059A (en) * 1970-06-11 1971-10-05 Rca Corp Transistor assembly
US3768044A (en) * 1971-04-09 1973-10-23 Thomson Csf Passive limiter for high-frequency waves
FR2175588A1 (xx) * 1972-03-15 1973-10-26 Lignes Telegraph Telephon
US4349831A (en) * 1979-09-04 1982-09-14 General Electric Company Semiconductor device having glass and metal package

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3302266A (en) * 1962-09-26 1967-02-07 Airtron Inc Electrical device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2503256A (en) * 1943-01-29 1950-04-11 Sperry Corp Ultra high frequency wavemeter
US2546061A (en) * 1948-01-19 1951-03-20 Beauvais Pierre De Socket contact with resilient inserts
US2639393A (en) * 1948-02-26 1953-05-19 Piezo Crystals Ltd Mounting and holder for piezoelectric crystals
US2777949A (en) * 1952-03-03 1957-01-15 Ericsson Telefon Ab L M Crystal diode for microwaves
US2783378A (en) * 1949-07-30 1957-02-26 Jr Clyde E Vogeley Modulation in a ridged wave guide
US2807731A (en) * 1954-01-27 1957-09-24 Standard Electronics Corp Crystal assembly and mounting means therefor

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2503256A (en) * 1943-01-29 1950-04-11 Sperry Corp Ultra high frequency wavemeter
US2546061A (en) * 1948-01-19 1951-03-20 Beauvais Pierre De Socket contact with resilient inserts
US2639393A (en) * 1948-02-26 1953-05-19 Piezo Crystals Ltd Mounting and holder for piezoelectric crystals
US2783378A (en) * 1949-07-30 1957-02-26 Jr Clyde E Vogeley Modulation in a ridged wave guide
US2777949A (en) * 1952-03-03 1957-01-15 Ericsson Telefon Ab L M Crystal diode for microwaves
US2807731A (en) * 1954-01-27 1957-09-24 Standard Electronics Corp Crystal assembly and mounting means therefor

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3010072A (en) * 1958-11-20 1961-11-21 Research Corp Crystal detector assembly
US3135924A (en) * 1960-06-27 1964-06-02 Hazeltine Research Inc Matched coupling apparatus
US3274504A (en) * 1963-03-21 1966-09-20 Philips Corp Micro-wave detector
US3515955A (en) * 1966-10-27 1970-06-02 Semikron G Fur Gleichrichtelba Semiconductor arrangement
US3448415A (en) * 1968-08-01 1969-06-03 Bell Telephone Labor Inc Tunable crystal diodes
US3611059A (en) * 1970-06-11 1971-10-05 Rca Corp Transistor assembly
US3768044A (en) * 1971-04-09 1973-10-23 Thomson Csf Passive limiter for high-frequency waves
FR2175588A1 (xx) * 1972-03-15 1973-10-26 Lignes Telegraph Telephon
US4349831A (en) * 1979-09-04 1982-09-14 General Electric Company Semiconductor device having glass and metal package

Also Published As

Publication number Publication date
GB899253A (en) 1962-06-20
BE572922A (xx)
FR1215351A (fr) 1960-04-19
DE1111680B (de) 1961-07-27
CH366572A (de) 1963-01-15
NL234330A (xx)

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