US2918612A - Rectifier - Google Patents

Rectifier Download PDF

Info

Publication number
US2918612A
US2918612A US678984A US67898457A US2918612A US 2918612 A US2918612 A US 2918612A US 678984 A US678984 A US 678984A US 67898457 A US67898457 A US 67898457A US 2918612 A US2918612 A US 2918612A
Authority
US
United States
Prior art keywords
rectifier
envelope
contact
junction
substance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US678984A
Inventor
Frank W Parrish
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Americas Corp
Original Assignee
International Rectifier Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Priority to US678984A priority Critical patent/US2918612A/en
Application granted granted Critical
Publication of US2918612A publication Critical patent/US2918612A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60Protection against electrostatic charges or discharges, e.g. Faraday shields
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/074Stacked arrangements of non-apertured devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]

Definitions

  • This invention relates to rectifiers, and particularly to a means for reducing corona discharge therein.
  • An object of this invention is to provide in a hermetically sealed crystal junction rectifier, a means for reducing corona discharge therein.
  • An allied object is to improve the heat transfer characteristics of such a rectifier so as to enable the capacity of a rectifier of a given size to be uprated by reducing its working temperature. Rectifier ratings are drastically cut as temperatures increase, and a means for reliably improving heat transfer and thereby lowering the operating temperature of a rectifier permits a rectifier of a given size to be used to handle a larger load than is possible at a higher temperature.
  • an impermeable envelope encloses a rectifier which may be a crystal junction type rectifier, along with a quantity of a fiuorochemical substance selected from the group consisting of C F O and 4 9)a l
  • Fig. l is a cross section of a rectifier incorporating this invention taken at line 11 of Fig. 2;
  • Fig. 2 is a cross section taken at line 2-2 of Fig. 1;
  • Fig. 3 is a'plan view of a part of-the rectifier of Fig. 1.
  • a rectifierassembly 10 has an outer envelope which includes a cylindrical tube 11 and a pair of conductive metallic caps 12, 13.v
  • the tube 11 may be made of any suitable insulating material, such as porcelain, glass, or other ceramic, and has an opening at both ends. These openings are closed by the metallic caps to provide a hermetic seal for the space within the envelope.
  • a crystal junction rectifier 14 is shown in detail in Fig. 1.
  • This rectifier includes a base plate 15 which is provided with a dimple 16 at the center thereof. Within this dimple there is soldered or otherwise conductively afiixed to said base plate a wafer 17 of a semi-conductor material such as silicon or germanium. In the practice of this invention, silicon is the preferred semi-conductor element.
  • anode contact 18 is welded to the free surface of the wafer 17.
  • This anode contact is made of one of or a mixture of metals belonging to group III of the periodic chart of the elements, aluminum being the preferred substance when silicon is used.
  • the welding of the anode contact to wafer 17 produces a crystal junction 19 which is shown as a curved line in cross section in Fig. 1.
  • the rectifying action of the rectifier is thought to take place atthis junction.
  • An insulating spacerwasher 20 abuts the' base plate on the same side as thewafer andhas a somewhat lesser diameter than'the base plate.
  • a contact washer 21 bears against the spacer washer and has a tongue22 punched in.its center which makes contact withthe anode contact 18 of the crystal junction rectifier.
  • a voltage divider strip 23 is laid along the wall of the tube 11 in contact with the edge of each of the base plates and contact washers.
  • This voltage divider strip has a resistance which is somewhat provided a shunt circuit for current flow alongside and in parallel with the rectifiers which causes an approximately equal voltage division between the individual rectifiers 14, this strip acting as a voltage divider. It will be understood that the resistance of this divider strip will be high enough that it does not amount to a complete shunt for a major portion of the current.
  • On the directly opposite side from the voltage divider strip there is a compression strip 24 made of elastic rubber or other soft material which tends to maintain the spacer washers and the base-plates in contact with the voltage divider stn'p.
  • Spring contacts 25 and 2 6 are provided in contact with metallic caps 12 and 13, and bear respectively against the left and right hand crystal junction rectifiers 14. That is, spring contact 25 bears against the base plate 15 of the left hand rectifier 14, and spring contact 26 bears against the right hand contact washer 21 of the right hand rectifier 14. In this manner, the rectifiers are held compressed against each other and the contacts 25 and 26 provide conductive means by which the metal caps are connected to opposite sides of the rectifier stack.
  • the spacer washers 20 limit the amount of compression which can be exerted on the surface of the anode contact and thereby upon the wafer 17 A silicon, crystal junction type rectifier in which this invention may favorably be carried out has been dis closed above.
  • the space within the envelope is provided with a quantity of a substance for reducing corona. It has been found that in operation, rectifiers of the type described above often produce an undesirable amount of radio noise and corona. By providing a dielectric within the envelope as set forth below, a marked and striking diminution in noise and corona is obtained. It is better for the space within the envelope to be substantially completely filled with this substance, allowing only room for thermal expansion. However, occasionally better cooling can be obtained by using a lesser amount of substance so that a substantial quantity of the substance can be in the vapor or gaseous state, and the rest in a liquid state for improving thermal transfer.
  • the substance for reducing corona is selected from a group consisting of compounds with the empirical formula C F O and (C F N. Both of these compounds are completely fiuorinated. That is, all of their hydrogen has been replaced by fluorine. This appears to account for many of their favorable qualities.
  • the former compound is sold by Minnesota Mining and Manufacturing Co., 900 Fauquier Avenue, St. Paul, Minnesota, under the trade name Fluorochemical 0-75, and the latter is sold by the same company in Minnesota under the trade name Fluorochemical N-43. Both of these substances are notable for their inertness at ordinary temperatures, ordi- Patented Dec. 22, 1959-.
  • C F N is a completely fluorinated tributyl amine, having the name heptacosafluorotributylamine. Although the substance has the structure of a tertiary amine it has none of the properties usually associated with this type of compound.
  • envelope denotes structure which surrounds the crystal junction rectifier.
  • this envelope comprises the tube 11 and caps 12 and 13. These elements enclose the entire structure.
  • insulating spacer washers 20 form a secondary portion of the envelope when imperforate, but would not form a part of the envelope if perforated.
  • there is a spacing between at least part of the rectifier structure and the envelope for example, the space between cap 12 and the left-hand face of base plate 15, as shown in Fig. 1.
  • Other spacings shown are between the right-hand face of all of the base plates and the inside surface of the spacer washers (if imperforate), and between the outside surface of the spacer washers, the portion of the base plates outside thereof, and the tube 11.
  • the fluorochemical will bathe the surfaces of the rectifier that are spaced from the tube. Whether it also contacts the tube is not critical, although a completely filled assembly is desirable.
  • a hermetically sealed rectifier comprising: a crystal junction for rectifying current supplied thereto; a gastight envelope enclosing said junction; a quantity of a substance selected from the group consisting of C F O and (C F N within said envelope and in contact with said junction for reducing corona discharge during operation of said rectifier; and electrically conductive means included in said envelope and connected to said junction for providing electrical connections to said rectifier.
  • the C F O is a completely fiuorinated cyclic ether, characterized by its chemical inertness at ordinary temperatures, boiling point of 101 C., density at 25 C. of 1.760 grams/cubic centimeter, refractive index at 25 C. of 1.276, and specific heat of 0.26 calorie/gram/ C. at 25-40" C.; and in which the (C.;F N is heptacosafiuorotributylamine, characterized by its chemical inertness at ordinary temperatures, boiling point of 177 C., density at 25 C. of 1.872 grams/ cubic centimeters, refractive index at 25 C. of 1.2910, and specific heat 0.27 calorie/gram/ C. at 2540 C.
  • Apparatus according to claim 2 in which the crystal junction comprises a silicon wafer and an anode contact conductively attached thereto.
  • a hermetically sealed rectifier comprising: an envelope comprising an insulator tube have an opening at each of its ends and a conductive cap at each of said ends for closing the openings; a crystal junction rectifier within said envelope, said crystal junction including a wafer of semi-conducting material and an anode contact conductively attached thereto; means making an electrical connection between said wafer and one of said caps; means making an electrical connection between said anode contact and the other of said caps; and a quantity of a substance selected from the group consisting of C F O and (C F N within said envelope for reducing corona discharge during operation of said rectifier.
  • Apparatus according to claim 4 in which the C F O is a completely fluorinated cyclic ether, characterized by its chemical inertness at ordinary temperatures, boiling point of 101 C., density at 25 C. of 1.760 grams/cubic centimeters, refractive index at 25 C. of 1.276, and specific heat of 0.26 calorie/gram/ C. at 2540 C.; and in which the (C F N is heptacosafiuorotributylamine, characterized by its chemical inertness at ordinary temperatures, boiling point of 177 C., density at 25 C. of 1.872 grams/cubic centimeter, refractive index at 25 C. of 1.2910, and specific heat 0.27 calorie/gram/ C. at 2540 C.
  • Apparatus according to claim 5 in which the wafer consists of silicon and the anode contact consists essentially of a group III metal.
  • a hermetically-sealed crystal-junction type rectifier assembly in which a crystal junction rectifier is enclosed in an envelope, there being a spacing between at least part of the rectifier and the envelope, a quantity of a substance selected from the group consisting of C F O and (C F N in said spacing and in contact with the rectifier for reducing corona discharge during operation of the rectifier.
  • Apparatus according to claim 8 in which the C F O is a completely fluorinated cyclic ether, characterized by its chemical inertness at ordinary temperatures, boiling point of 101 C., density at 25 C. of 1.760 grams/cubic centimeter, refractive index at 25 C. of 1.276, and specific heat of 0.26 calorie/grarn/ C. at 2540 C.; and in which the (C F N is heptacosafiuorotributylamine, characterized by its chemical inertness at ordinary temperatures, boiling point of 177 0., density at 25 C. of
  • junction rectifier is a silicon rectifier.
  • Apparatus according to claim 10 in which there is a plurality of rectifiers in said envelope arranged in a stack.

Description

INVENTOR.
' HRANK 14 FARR/SH Arromv: r
United States Patent RECTIFIER Frank W. Parrish, Lakewood, Calif., assignor to International Rectifier Corporation, El Segundo, Calif., a corporation of California Application August 19, 1957, Serial No. 678,984 11 Claims. (Cl. 317-434) This invention relates to rectifiers, and particularly to a means for reducing corona discharge therein.
It frequently is observed that a great deal of corona discharge is developed that is bothersome to surrounding electrical circuits when rectifiers, particularly of the crystal junction type, are operated at relatively high voltages. An object of this invention is to provide in a hermetically sealed crystal junction rectifier, a means for reducing corona discharge therein. An allied object is to improve the heat transfer characteristics of such a rectifier so as to enable the capacity of a rectifier of a given size to be uprated by reducing its working temperature. Rectifier ratings are drastically cut as temperatures increase, and a means for reliably improving heat transfer and thereby lowering the operating temperature of a rectifier permits a rectifier of a given size to be used to handle a larger load than is possible at a higher temperature.
According to this invention, an impermeable envelope encloses a rectifier which may be a crystal junction type rectifier, along with a quantity of a fiuorochemical substance selected from the group consisting of C F O and 4 9)a l The above and other features of this invention will be fully understood from the following detailed description and the accompanying drawings, in which:
Fig. l is a cross section of a rectifier incorporating this invention taken at line 11 of Fig. 2;
Fig. 2 is a cross section taken at line 2-2 of Fig. 1; and
.Fig. 3 is a'plan view of a part of-the rectifier of Fig. 1.
As shown in Fig. l, a rectifierassembly 10 has an outer envelope which includes a cylindrical tube 11 and a pair of conductive metallic caps 12, 13.v The tube 11 may be made of any suitable insulating material, such as porcelain, glass, or other ceramic, and has an opening at both ends. These openings are closed by the metallic caps to provide a hermetic seal for the space within the envelope.
A crystal junction rectifier 14 is shown in detail in Fig. 1. This rectifier includes a base plate 15 which is provided with a dimple 16 at the center thereof. Within this dimple there is soldered or otherwise conductively afiixed to said base plate a wafer 17 of a semi-conductor material such as silicon or germanium. In the practice of this invention, silicon is the preferred semi-conductor element.
'An anode contact 18 is welded to the free surface of the wafer 17. This anode contact is made of one of or a mixture of metals belonging to group III of the periodic chart of the elements, aluminum being the preferred substance when silicon is used. The welding of the anode contact to wafer 17 produces a crystal junction 19 which is shown as a curved line in cross section in Fig. 1. The rectifying action of the rectifier is thought to take place atthis junction. An insulating spacerwasher 20 abuts the' base plate on the same side as thewafer andhas a somewhat lesser diameter than'the base plate. A contact washer 21 bears against the spacer washer and has a tongue22 punched in.its center which makes contact withthe anode contact 18 of the crystal junction rectifier. It will thereby be seen that a unidirectionally conductive circuit can be established between the base plate 15 and. the contact washer 21. The crystal junction rectifier 14- just described is repeated as many times as desired in order to build up the necessary load carrying and voltage resisting rectifier assembly.
In order to improve the division of voltage in the reverse direction of current fiow, a voltage divider strip 23 is laid along the wall of the tube 11 in contact with the edge of each of the base plates and contact washers. This voltage divider strip has a resistance which is somewhat provided a shunt circuit for current flow alongside and in parallel with the rectifiers which causes an approximately equal voltage division between the individual rectifiers 14, this strip acting as a voltage divider. It will be understood that the resistance of this divider strip will be high enough that it does not amount to a complete shunt for a major portion of the current. On the directly opposite side from the voltage divider strip there is a compression strip 24 made of elastic rubber or other soft material which tends to maintain the spacer washers and the base-plates in contact with the voltage divider stn'p.
Spring contacts 25 and 2 6 are provided in contact with metallic caps 12 and 13, and bear respectively against the left and right hand crystal junction rectifiers 14. That is, spring contact 25 bears against the base plate 15 of the left hand rectifier 14, and spring contact 26 bears against the right hand contact washer 21 of the right hand rectifier 14. In this manner, the rectifiers are held compressed against each other and the contacts 25 and 26 provide conductive means by which the metal caps are connected to opposite sides of the rectifier stack.
It will be noted that the spacer washers 20 limit the amount of compression which can be exerted on the surface of the anode contact and thereby upon the wafer 17 A silicon, crystal junction type rectifier in which this invention may favorably be carried out has been dis closed above. According to this invention, the space within the envelope is provided with a quantity of a substance for reducing corona. It has been found that in operation, rectifiers of the type described above often produce an undesirable amount of radio noise and corona. By providing a dielectric within the envelope as set forth below, a marked and striking diminution in noise and corona is obtained. It is better for the space within the envelope to be substantially completely filled with this substance, allowing only room for thermal expansion. However, occasionally better cooling can be obtained by using a lesser amount of substance so that a substantial quantity of the substance can be in the vapor or gaseous state, and the rest in a liquid state for improving thermal transfer.
The substance for reducing corona is selected from a group consisting of compounds with the empirical formula C F O and (C F N. Both of these compounds are completely fiuorinated. That is, all of their hydrogen has been replaced by fluorine. This appears to account for many of their favorable qualities. The former compound is sold by Minnesota Mining and Manufacturing Co., 900 Fauquier Avenue, St. Paul, Minnesota, under the trade name Fluorochemical 0-75, and the latter is sold by the same company in Minnesota under the trade name Fluorochemical N-43. Both of these substances are notable for their inertness at ordinary temperatures, ordi- Patented Dec. 22, 1959-.
3 being able to be heated as high as 600 and the latter as high as 500 C. without evidence of decomposition.
The structure of the substance having the empirical formula C F O has not been definitely established, but it is believed to contain a 5 or 6 membered ring with-a fiuorinated side chain. The oxygen atom is contained in the ring. This substance appears to be a completely fluorinated cyclic ether.
The substance having the empirical formula (C F N is a completely fluorinated tributyl amine, having the name heptacosafluorotributylamine. Although the substance has the structure of a tertiary amine it has none of the properties usually associated with this type of compound.
The above compounds are also identifiable and definable by some of their physical properties which are as follows:
When a rectifier of the type shown in the drawings is even partially filled with either of the above substances or with a mixture of the two, a marked reduction, even to the point of entire elimination of corona and radio noise in normal rectifier operating range is obtained. In addition, thermal heat transfer is greatly improved.
The term envelope as used herein denotes structure which surrounds the crystal junction rectifier. Primarily, this envelope comprises the tube 11 and caps 12 and 13. These elements enclose the entire structure. In addition, insulating spacer washers 20 form a secondary portion of the envelope when imperforate, but would not form a part of the envelope if perforated. It will be observed that there is a spacing between at least part of the rectifier structure and the envelope; for example, the space between cap 12 and the left-hand face of base plate 15, as shown in Fig. 1. Other spacings shown are between the right-hand face of all of the base plates and the inside surface of the spacer washers (if imperforate), and between the outside surface of the spacer washers, the portion of the base plates outside thereof, and the tube 11. Preferably, the fluorochemical will bathe the surfaces of the rectifier that are spaced from the tube. Whether it also contacts the tube is not critical, although a completely filled assembly is desirable.
When only a portion of the space within the envelope is filled, the contact of the hot crystal junction rectifier with the substances will tend to vaporize them and the vapor will transfer its heat at the envelope boundary, where it is condensed and thence flows back to the rectifier. It is perhaps more favorable, however, to have a liquid to liquid contact between the tube wall and the dielectric, wherein the above substance makes direct contact in its liquid state with both the junction and the inside of the envelope for improving thermal transfer between the two.
This invention is not to be limited by the embodiments shown in the drawings and described in the description, which are given by way of example and notof limitation, but only in accordance with the scope of the appended claims. Particularly with respect to the construction of the hermetically sealed rectifier in which thefluorochemical is used, it is to be recognized that while the aforesaid silicon rectifier appears to benefit from the use of fluoro-chemicals more than any other known type ofrectifier, other types of rectifiers also show improvements from the use of said substances. Therefore, the type of rectifier, or the configuration of the hermetically sealing envelope is not a limitation on this invention.
I claim:
1. A hermetically sealed rectifier comprising: a crystal junction for rectifying current supplied thereto; a gastight envelope enclosing said junction; a quantity of a substance selected from the group consisting of C F O and (C F N within said envelope and in contact with said junction for reducing corona discharge during operation of said rectifier; and electrically conductive means included in said envelope and connected to said junction for providing electrical connections to said rectifier.
2. Apparatus according to claim 1 in which the C F O is a completely fiuorinated cyclic ether, characterized by its chemical inertness at ordinary temperatures, boiling point of 101 C., density at 25 C. of 1.760 grams/cubic centimeter, refractive index at 25 C. of 1.276, and specific heat of 0.26 calorie/gram/ C. at 25-40" C.; and in which the (C.;F N is heptacosafiuorotributylamine, characterized by its chemical inertness at ordinary temperatures, boiling point of 177 C., density at 25 C. of 1.872 grams/ cubic centimeters, refractive index at 25 C. of 1.2910, and specific heat 0.27 calorie/gram/ C. at 2540 C.
3. Apparatus according to claim 2 in which the crystal junction comprises a silicon wafer and an anode contact conductively attached thereto.
4. A hermetically sealed rectifier comprising: an envelope comprising an insulator tube have an opening at each of its ends and a conductive cap at each of said ends for closing the openings; a crystal junction rectifier within said envelope, said crystal junction including a wafer of semi-conducting material and an anode contact conductively attached thereto; means making an electrical connection between said wafer and one of said caps; means making an electrical connection between said anode contact and the other of said caps; and a quantity of a substance selected from the group consisting of C F O and (C F N within said envelope for reducing corona discharge during operation of said rectifier.
5. Apparatus according to claim 4 in which the C F O is a completely fluorinated cyclic ether, characterized by its chemical inertness at ordinary temperatures, boiling point of 101 C., density at 25 C. of 1.760 grams/cubic centimeters, refractive index at 25 C. of 1.276, and specific heat of 0.26 calorie/gram/ C. at 2540 C.; and in which the (C F N is heptacosafiuorotributylamine, characterized by its chemical inertness at ordinary temperatures, boiling point of 177 C., density at 25 C. of 1.872 grams/cubic centimeter, refractive index at 25 C. of 1.2910, and specific heat 0.27 calorie/gram/ C. at 2540 C.
6. Apparatus according to claim 5 in which the wafer consists of silicon and the anode contact consists essentially of a group III metal.
7. Apparatus according to claim 6 in which the anode contact consists essentially of aluminum.
8. In a hermetically-sealed crystal-junction type rectifier assembly in which a crystal junction rectifier is enclosed in an envelope, there being a spacing between at least part of the rectifier and the envelope, a quantity of a substance selected from the group consisting of C F O and (C F N in said spacing and in contact with the rectifier for reducing corona discharge during operation of the rectifier.
9. Apparatus according to claim 8 in which the C F O is a completely fluorinated cyclic ether, characterized by its chemical inertness at ordinary temperatures, boiling point of 101 C., density at 25 C. of 1.760 grams/cubic centimeter, refractive index at 25 C. of 1.276, and specific heat of 0.26 calorie/grarn/ C. at 2540 C.; and in which the (C F N is heptacosafiuorotributylamine, characterized by its chemical inertness at ordinary temperatures, boiling point of 177 0., density at 25 C. of
1.872 grams/cubic centimeter, refractive index at 25 C. of 1.2910, and specific heat 0.27 calorie/gram/ C. at 25-40 C.
10. Apparatus according to claim 9 in which the junction rectifier is a silicon rectifier.
11. Apparatus according to claim 10 in which there is a plurality of rectifiers in said envelope arranged in a stack.
References Cited in the file of this patent UNITED STATES PATENTS 2,462,911 Skinker Mar. 1, 1949 2,750,540 Waldkotter et a1 June 12, 1956 2,817,797 Coyle Dec. 24, 1957
US678984A 1957-08-19 1957-08-19 Rectifier Expired - Lifetime US2918612A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US678984A US2918612A (en) 1957-08-19 1957-08-19 Rectifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US678984A US2918612A (en) 1957-08-19 1957-08-19 Rectifier

Publications (1)

Publication Number Publication Date
US2918612A true US2918612A (en) 1959-12-22

Family

ID=24725123

Family Applications (1)

Application Number Title Priority Date Filing Date
US678984A Expired - Lifetime US2918612A (en) 1957-08-19 1957-08-19 Rectifier

Country Status (1)

Country Link
US (1) US2918612A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3168687A (en) * 1959-12-22 1965-02-02 Hughes Aircraft Co Packaged semiconductor assemblies having exposed electrodes
US3247446A (en) * 1961-11-17 1966-04-19 Int Rectifier Corp High voltage rectifier
US3264531A (en) * 1962-03-29 1966-08-02 Jr Donald C Dickson Rectifier assembly comprising series stacked pn-junction rectifiers
US3307087A (en) * 1963-01-03 1967-02-28 Machlett Lab Inc Stacked solid state rectifier
US3319136A (en) * 1964-09-08 1967-05-09 Dunlee Corp Rectifier
US3373335A (en) * 1964-12-22 1968-03-12 Electronic Devices Inc Stacked assembly of rectifier units incorporating shunt capacitors
US3566003A (en) * 1968-01-24 1971-02-23 Int Rectifier Corp Plug-in diode having conductive metallic caps and homogeneous encapsulation medium
DE3338165A1 (en) * 1982-10-22 1984-04-26 Westinghouse Electric Corp., Pittsburgh, Pa. ASSEMBLY AND COOLING DEVICE FOR SEMICONDUCTOR CIRCUITS

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2462911A (en) * 1945-10-20 1949-03-01 Standard Telephones Cables Ltd Rectifier
US2750540A (en) * 1950-08-17 1956-06-12 Siemens Ag Selenium rectifiers and their manufacture
US2817797A (en) * 1953-11-23 1957-12-24 United Carr Fastener Corp Rectifier

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2462911A (en) * 1945-10-20 1949-03-01 Standard Telephones Cables Ltd Rectifier
US2750540A (en) * 1950-08-17 1956-06-12 Siemens Ag Selenium rectifiers and their manufacture
US2817797A (en) * 1953-11-23 1957-12-24 United Carr Fastener Corp Rectifier

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3168687A (en) * 1959-12-22 1965-02-02 Hughes Aircraft Co Packaged semiconductor assemblies having exposed electrodes
US3247446A (en) * 1961-11-17 1966-04-19 Int Rectifier Corp High voltage rectifier
US3264531A (en) * 1962-03-29 1966-08-02 Jr Donald C Dickson Rectifier assembly comprising series stacked pn-junction rectifiers
US3307087A (en) * 1963-01-03 1967-02-28 Machlett Lab Inc Stacked solid state rectifier
US3319136A (en) * 1964-09-08 1967-05-09 Dunlee Corp Rectifier
US3373335A (en) * 1964-12-22 1968-03-12 Electronic Devices Inc Stacked assembly of rectifier units incorporating shunt capacitors
US3566003A (en) * 1968-01-24 1971-02-23 Int Rectifier Corp Plug-in diode having conductive metallic caps and homogeneous encapsulation medium
DE3338165A1 (en) * 1982-10-22 1984-04-26 Westinghouse Electric Corp., Pittsburgh, Pa. ASSEMBLY AND COOLING DEVICE FOR SEMICONDUCTOR CIRCUITS

Similar Documents

Publication Publication Date Title
US4262318A (en) Zinc-oxide surge arrester
US2918612A (en) Rectifier
US2752541A (en) Semiconductor rectifier device
US2288341A (en) Blocking layer electrode system
US2883591A (en) Semiconductor rectifier device
TWI267245B (en) Gas insulated switchgear
US3543841A (en) Heat exchanger for high voltage electronic devices
US2443545A (en) Lead-in construction for electrical devices
US3889222A (en) Surge voltage absorber
US2744217A (en) Electrical apparatus
US5446436A (en) High voltage high power arc suppressing fuse
US3818409A (en) Electric circuit breaking fuse
JPS62291052A (en) Improved silicon package for power semiconductor device
US3441813A (en) Hermetically encapsulated barrier layer rectifier
US2793331A (en) Semi-conductive devices
US3402074A (en) Energy converter
US3373335A (en) Stacked assembly of rectifier units incorporating shunt capacitors
US3001110A (en) Coaxial semiconductors
US720592A (en) Electric battery.
US2556855A (en) Gaseous discharge device
US3196203A (en) Semiconductor device with stress resistant support for semiconductor disc
US2291864A (en) Electric discharge device
US4320035A (en) Dielectric gas-vapor and vapor-vapor mixtures
US2477506A (en) Internal shield for vapor electric devices
US3827011A (en) Fuse assembly for oil-filled transformers