US2767358A - Semiconductor signal translating devices - Google Patents

Semiconductor signal translating devices Download PDF

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Publication number
US2767358A
US2767358A US326312A US32631252A US2767358A US 2767358 A US2767358 A US 2767358A US 326312 A US326312 A US 326312A US 32631252 A US32631252 A US 32631252A US 2767358 A US2767358 A US 2767358A
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United States
Prior art keywords
collector
zone
base
zones
emitter
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Expired - Lifetime
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US326312A
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English (en)
Inventor
James M Early
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AT&T Corp
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Bell Telephone Laboratories Inc
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Filing date
Publication date
Priority to US24872D priority Critical patent/USRE24872E/en
Priority to BE524899D priority patent/BE524899A/xx
Priority to NLAANVRAGE7613182,A priority patent/NL183430C/xx
Priority to NL91725D priority patent/NL91725C/xx
Priority to US326312A priority patent/US2767358A/en
Application filed by Bell Telephone Laboratories Inc filed Critical Bell Telephone Laboratories Inc
Priority to FR1095330D priority patent/FR1095330A/fr
Priority to DEW12314A priority patent/DE1027800B/de
Priority to GB32720/53A priority patent/GB748925A/en
Application granted granted Critical
Publication of US2767358A publication Critical patent/US2767358A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Definitions

  • Junction transistors such as illustrated in Patent 2,569,347, granted September 25, 1951, to W. Shockley, comprise, in general, a body of semiconductive material, such as germanium or silicon, having therein a zone of one conductivity type between and defining junctions with a pair of zones of the opposite conductivity type. Individual substantially ohmic connections are made to the Zones, that to the intermediate zone being termed the base and those to the outer zones being designated theemitter and collector respectively. The properties of such devices are discussed in an article by R. L. Wallace and W. J. Pietenpol in the Bell System Technical Journal, July 1951, page 530.
  • junction transistors are the current multiplication factor, commonly designated alpha, and the operating frequency range, more particularly the frequency range over which at least a prescribed gain is realizable. Also of particular moment are the power capacity and operating stability.
  • One general object of this invention is to improve the performance characteristics of transistors.
  • objects of this invention are to enhance the gain and operating frequency range of transistors, to increase the power capacity thereof, to improve the stability of such devices and to facilitate the construction of junction transistors.
  • the semiconductive body of a transistor is constructed to optimize the base resistance and collector capacitance whereby, inter alia, substantial gain over a wide frequency range is attained. More specifically, in accordance with one feature of this invention, a region of the semiconduo tive body in a transistor, between the base and collector, is constructed to, have a high resistivity, specifically substantially intrinsic conductivity, and the base layer or zone is constructed to have a very low resistivity. Consequently, both a low base resistance and a low collector capacitance are'attained and this, it has been de ermined, leads to substantial enhancement of the performance characteristics or" the device.
  • the body is formed as a single crystal having therein a pair of contiguous zones, one of which is of the conductivity type desired for the base region and the other of which is of substantially intrinsic conductivity.
  • the emitter and collector zones of a junction transistor are produced by introduction of an appropriate impurity into portions of the base and intrinsic zones thereby to create in these zones islands or layers of the conductivity type opposite that of the base zone.
  • the emitter Inoperation of the device, the emitter is biased in the forward direction and the collector in the reverse direction, both relative to the base; Because of the reverse bias on the collector, a space charge or barrier region obtains between the base and collector and this, by virtue of the presence of the substantially intrinsic region, can be made to extend from the collector to the base at a relatively low collector voltage. Further, barrier regions of substantial width, leading to low collector capacitances, are realizable.
  • Fig. 1 depicts diagrammatically a junction transistor illustrative of one embodiment of this invention
  • FIG. 2 portrays another illustrative embodiment of this invention.
  • Figs. 3, 4 and 5 are graphs representing relations of certain parameters of particular moment in the operation of transistors constructed in accordance with this invention.
  • the semiconductive body has been shown to a greatly enlarged scale.
  • this body may be .00l.100 inch by .001-1.0 inch in cross section
  • the base zone may be of the order of 4X10 --10 inch thick
  • the substantially intrinsic region may be of the order of 2.S 10 5 10 inch thick.
  • the conductivity type of each of the several zones is designated by the identifying letter, N, I or P.
  • the translating device portrayed in Fig. 1 comprises a disc or wafer 19 of semiconductive material, such as silicon or germanium, having therein a substantially intrinsic zone 11 and a zone 12 strongly of one conductivity type, for example N type as indicated.
  • the disc or wafer 16 comprises also two zones 13 and 14 strongly of the conductivity type opposite that of the zone 12, for example P type as indicated.
  • the zones 12, 13 and 14 constitute the base, emitter and collector regions respectively of the transistor and have ohmic connections thereto.
  • the junction between the base and emitter regions 12 and 13 is biased in the forward direction as by a battery 17 and signals as from a source 13 are impressed between these two regions.
  • the collector zone 14 is biased in the reverse direction with respect to the base as by battery 15 in series with a load represented generally by the resistor 16.
  • the semiconductive disc or Wafer is of single crystal construction fabricated for example in the manner disclosed in the application Serial No. 168,184, filed Tune 15, 1950, of G. K. Teal, now patent 2,727,840 issued December 20, 1955, the N zone 12 being produced by heavily doping a melt of substantially intrinsic material With a significant impurity such as antimony.
  • the P regions 13 and 14 may be produced by alloying an acceptor impurity such as indium with the intrinsic and N type zones 11 and 12, respectively, as in the manner disclosed in the application Serial No. 270,370, filed February 7, 1952, of G. L. Pearson.
  • the zones 12, 13 and 14 are strongly extrinsic whereby, inter alia, a low base resistance is obtained, a copious supply of majority carriers is provided at the emitter zone 13 for injection into the base zone 12, and relatively high temperature insensitivity is realized at the collector.
  • the base zone 12 may have a resistivity of the order of .001-1.0 ohm centimeter and the emitter and collector zones 13 and 14 may have a resistivity of the order of or less than .001 ohm centimeter.
  • the donors and acceptors are substantially in balance so that the excess carrier concentration is very small and the resistivity is high.
  • the resistivity is greater'than 30 ohm centimeter.
  • the reverse bias upon the collector zone 14 is such that a space charge or barrier region'extends through the intrinsic zone '11, that is bridges the space between the base and collector zones.
  • an electrostatic potential obtainsacross each of the junctions between the intrinsic zone 11 and the base and collector zones 12 and 14.
  • the sum of these and the-collector 'bias requisite to extend the barrier region from base to collector is herein termed the barrier potential.
  • the relation between the latter and thickness or width ofthe zone 11 is portrayed in Fig. .3 for several. values of excess carrier concentration or resistivity for the zone 11 in germanium.
  • curve Aportrays the relation for a zone 11 having a resistivity of about 30 ohm centimeters corresponding ',to an excess carrier concentration of about 3 X 10 /cc.
  • curve B represents the case for a zone 11 of about 45 ohm centimeters resistivity, corresponding to an excess carrier concentration of about l /cc.
  • curve C shows the relation for azone 11 wherein the excess carrier concentration is about ,3 X10 It will be noted from Fig. 3 that for a device wherein the zone 11 has the properties correspond ing to curve C, a barrier potential of only about volts is required when the zone 11 is about 5 X l() centimeters thick or wide. 7
  • devices constructed in accordance with this invention enable realization of high-operating stability.
  • each of thevthree parameters involved is amenable to design control so that the relation thereof may be optimized to provide a prescribed operating characteristic, such,.for example, as gain of ;at
  • the thickness of theleast a certain magnitude ,overa specified :band of frequencies.
  • the collector connection is formed electrically in ways now well known in the art. It will be understood also, of course, that the invention may be utilizedjin junction emitter-point collector and point emitter-junction collector transistors.
  • the substantially intrinsic region I may be either slightly N or -P type, say exhibiting an excess concentration of carriers of the order of 5 l0 or having a resistivity of about 30 ohm centimeters or higher.
  • the sign of the excess charge is such as to neutralizelthe space charge of the mobile carriers which carry the conduction current to the collector region.
  • the substantially intrinsic region maybe slightly P type thereby to neutralize the space charge duejto the holes injected into the base region or zone 12 from the emitter zone 13 and drawn toward the collector zone 14. The neutralization of space charge thus etfected .in-
  • a signal translating device comprising a .bodyflot semiconductive material having therein ,a first zone .of substantially intrinsic conductivity and a second .zone.,of
  • extrinsic conductivity andof one conductivity extrinsic conductivity andof one conductivity:.type icons tiguous with said first .zone, a substantially rectifying collector connection directly tov said first zone, and .a substantially nonrectifying base connection .and one .substantially rectifying emitter connection both directly to said second zone, whereby low collector to-baseclapacity is achieved. 7
  • each of said-emitter and collector connections comprises a point contact.
  • said emitter connection comprises a zonein said body of a conductivity type opposite tothat of said extrinsic zone and said collector conneetion'comprises a point contact.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
US326312A 1952-12-16 1952-12-16 Semiconductor signal translating devices Expired - Lifetime US2767358A (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
NLAANVRAGE7613182,A NL183430C (nl) 1952-12-16 Werkwijze voor de bereiding van een vast concentraat op basis van een thermoplastische hars en een poedervormig microbiocide, werkwijze voor de bereiding van een vast thermoplastisch mengsel onder toepassing van een dergelijk concentraat, alsmede daardoor verkregen gevormde thermoplastische mengsels.
NL91725D NL91725C (en(2012)) 1952-12-16
US24872D USRE24872E (en) 1952-12-16 Collector potential
BE524899D BE524899A (en(2012)) 1952-12-16
US326312A US2767358A (en) 1952-12-16 1952-12-16 Semiconductor signal translating devices
FR1095330D FR1095330A (fr) 1952-12-16 1953-09-11 Dispositifs semi-conducteurs pour translation de signaux
DEW12314A DE1027800B (de) 1952-12-16 1953-10-13 Verfahren zur Herstellung eines Transistors mit einem Halbleiterkoerper aus zwei Schichten
GB32720/53A GB748925A (en) 1952-12-16 1953-11-25 Semiconductor electric signal translating devices and circuits employing them

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US326312A US2767358A (en) 1952-12-16 1952-12-16 Semiconductor signal translating devices

Publications (1)

Publication Number Publication Date
US2767358A true US2767358A (en) 1956-10-16

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US24872D Expired USRE24872E (en) 1952-12-16 Collector potential
US326312A Expired - Lifetime US2767358A (en) 1952-12-16 1952-12-16 Semiconductor signal translating devices

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US24872D Expired USRE24872E (en) 1952-12-16 Collector potential

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BE (1) BE524899A (en(2012))
DE (1) DE1027800B (en(2012))
FR (1) FR1095330A (en(2012))
GB (1) GB748925A (en(2012))
NL (2) NL183430C (en(2012))

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2843515A (en) * 1955-08-30 1958-07-15 Raytheon Mfg Co Semiconductive devices
US2843516A (en) * 1954-11-08 1958-07-15 Siemens Ag Semiconductor junction rectifier
US2861229A (en) * 1953-06-19 1958-11-18 Rca Corp Semi-conductor devices and methods of making same
US2869084A (en) * 1956-07-20 1959-01-13 Bell Telephone Labor Inc Negative resistance semiconductive device
US2878152A (en) * 1956-11-28 1959-03-17 Texas Instruments Inc Grown junction transistors
US2883313A (en) * 1954-08-16 1959-04-21 Rca Corp Semiconductor devices
US2891160A (en) * 1956-01-03 1959-06-16 Csf Semi-conductor oscillators
US2895109A (en) * 1955-06-20 1959-07-14 Bell Telephone Labor Inc Negative resistance semiconductive element
US2895058A (en) * 1954-09-23 1959-07-14 Rca Corp Semiconductor devices and systems
US2899646A (en) * 1959-08-11 Tread
US2914715A (en) * 1956-07-02 1959-11-24 Bell Telephone Labor Inc Semiconductor diode
US2921362A (en) * 1955-06-27 1960-01-19 Honeywell Regulator Co Process for the production of semiconductor devices
US2989713A (en) * 1959-05-11 1961-06-20 Bell Telephone Labor Inc Semiconductor resistance element
US3028655A (en) * 1955-03-23 1962-04-10 Bell Telephone Labor Inc Semiconductive device
US3057762A (en) * 1958-03-12 1962-10-09 Francois F Gans Heterojunction transistor manufacturing process
US3082131A (en) * 1959-01-16 1963-03-19 Texas Instruments Inc Versatile transistor structure
US3084078A (en) * 1959-12-02 1963-04-02 Texas Instruments Inc High frequency germanium transistor
US3162770A (en) * 1957-06-06 1964-12-22 Ibm Transistor structure
US3193737A (en) * 1955-05-18 1965-07-06 Ibm Bistable junction transistor
US3231793A (en) * 1960-10-19 1966-01-25 Merck & Co Inc High voltage rectifier
US3244949A (en) * 1962-03-16 1966-04-05 Fairchild Camera Instr Co Voltage regulator
US3398334A (en) * 1964-11-23 1968-08-20 Itt Semiconductor device having regions of different conductivity types wherein current is carried by the same type of carrier in all said regions
US3421057A (en) * 1965-08-23 1969-01-07 Ibm High speed switching transistor and fabrication method therefor
US3544855A (en) * 1966-10-29 1970-12-01 Yasuo Nannichi Variable-frequency microwave oscillator element
WO1980001335A1 (en) * 1978-12-20 1980-06-26 Western Electric Co Dielectrically-isolated integrated circuit complementary transistors for high voltage use

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1035780B (de) * 1955-08-29 1958-08-07 Ibm Deutschland Transistor mit eigenleitender Zone
DE1208010B (de) * 1955-11-21 1965-12-30 Siemens Ag Flaechenhafter Halbleitergleichrichter
US2996918A (en) * 1955-12-27 1961-08-22 Ibm Junction transistor thermostat
DE1101622B (de) * 1956-01-03 1961-03-09 Csf Halbleiterdiode mit einem PI- oder NI-UEbergang im Halbleiterkoerper
DE1184869B (de) * 1957-11-29 1965-01-07 Comp Generale Electricite Gesteuerter Halbleiter-Leistungsgleichrichter mit vier Zonen abwechselnden Leitungstyps
US2974072A (en) * 1958-06-27 1961-03-07 Ibm Semiconductor connection fabrication
DE1093021B (de) * 1959-01-24 1960-11-17 Telefunken Gmbh Pnip- bzw. npin-Drifttransistor fuer hohe Frequenzen
DE1208012C2 (de) * 1959-08-06 1966-10-20 Telefunken Patent Flaechentransistor fuer hohe Frequenzen mit einer Begrenzung der Emission des Emitters und Verfahren zum Herstellen
GB985864A (en) * 1960-08-05 1965-03-10 Telefunken Patent A semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2569347A (en) * 1948-06-26 1951-09-25 Bell Telephone Labor Inc Circuit element utilizing semiconductive material
US2623105A (en) * 1951-09-21 1952-12-23 Bell Telephone Labor Inc Semiconductor translating device having controlled gain

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2569347A (en) * 1948-06-26 1951-09-25 Bell Telephone Labor Inc Circuit element utilizing semiconductive material
US2623105A (en) * 1951-09-21 1952-12-23 Bell Telephone Labor Inc Semiconductor translating device having controlled gain

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2899646A (en) * 1959-08-11 Tread
US2861229A (en) * 1953-06-19 1958-11-18 Rca Corp Semi-conductor devices and methods of making same
US2883313A (en) * 1954-08-16 1959-04-21 Rca Corp Semiconductor devices
US2895058A (en) * 1954-09-23 1959-07-14 Rca Corp Semiconductor devices and systems
US2843516A (en) * 1954-11-08 1958-07-15 Siemens Ag Semiconductor junction rectifier
US3028655A (en) * 1955-03-23 1962-04-10 Bell Telephone Labor Inc Semiconductive device
US3193737A (en) * 1955-05-18 1965-07-06 Ibm Bistable junction transistor
US2895109A (en) * 1955-06-20 1959-07-14 Bell Telephone Labor Inc Negative resistance semiconductive element
US2921362A (en) * 1955-06-27 1960-01-19 Honeywell Regulator Co Process for the production of semiconductor devices
US2843515A (en) * 1955-08-30 1958-07-15 Raytheon Mfg Co Semiconductive devices
US2891160A (en) * 1956-01-03 1959-06-16 Csf Semi-conductor oscillators
US2914715A (en) * 1956-07-02 1959-11-24 Bell Telephone Labor Inc Semiconductor diode
US2869084A (en) * 1956-07-20 1959-01-13 Bell Telephone Labor Inc Negative resistance semiconductive device
US2878152A (en) * 1956-11-28 1959-03-17 Texas Instruments Inc Grown junction transistors
US3162770A (en) * 1957-06-06 1964-12-22 Ibm Transistor structure
US3057762A (en) * 1958-03-12 1962-10-09 Francois F Gans Heterojunction transistor manufacturing process
US3082131A (en) * 1959-01-16 1963-03-19 Texas Instruments Inc Versatile transistor structure
US2989713A (en) * 1959-05-11 1961-06-20 Bell Telephone Labor Inc Semiconductor resistance element
US3084078A (en) * 1959-12-02 1963-04-02 Texas Instruments Inc High frequency germanium transistor
US3231793A (en) * 1960-10-19 1966-01-25 Merck & Co Inc High voltage rectifier
US3244949A (en) * 1962-03-16 1966-04-05 Fairchild Camera Instr Co Voltage regulator
US3398334A (en) * 1964-11-23 1968-08-20 Itt Semiconductor device having regions of different conductivity types wherein current is carried by the same type of carrier in all said regions
US3421057A (en) * 1965-08-23 1969-01-07 Ibm High speed switching transistor and fabrication method therefor
US3544855A (en) * 1966-10-29 1970-12-01 Yasuo Nannichi Variable-frequency microwave oscillator element
WO1980001335A1 (en) * 1978-12-20 1980-06-26 Western Electric Co Dielectrically-isolated integrated circuit complementary transistors for high voltage use
US4232328A (en) * 1978-12-20 1980-11-04 Bell Telephone Laboratories, Incorporated Dielectrically-isolated integrated circuit complementary transistors for high voltage use

Also Published As

Publication number Publication date
FR1095330A (fr) 1955-06-01
GB748925A (en) 1956-05-16
DE1027800B (de) 1958-04-10
NL183430C (nl)
USRE24872E (en) 1960-09-27
NL91725C (en(2012))
BE524899A (en(2012))

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