US2703856A - Germanium diode - Google Patents
Germanium diode Download PDFInfo
- Publication number
- US2703856A US2703856A US359275A US35927553A US2703856A US 2703856 A US2703856 A US 2703856A US 359275 A US359275 A US 359275A US 35927553 A US35927553 A US 35927553A US 2703856 A US2703856 A US 2703856A
- Authority
- US
- United States
- Prior art keywords
- crystal
- contact
- housing
- contact member
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052732 germanium Inorganic materials 0.000 title description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title description 3
- 239000013078 crystal Substances 0.000 claims description 32
- 235000012469 Cleome gynandra Nutrition 0.000 description 22
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229920003319 Araldite® Polymers 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/041—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction having no base used as a mounting for the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Definitions
- my invention relates to a point contact crystal device comprising what is commonly known as a cat Whisker electrode, and a semiconductmg crystal element.
- a point contact crystal device comprising what is commonly known as a cat Whisker electrode, and a semiconductmg crystal element.
- the mounting of the cat Whisker with respect to the crystal is very important, and a considerable amount of research and development has been made to find the most practical and eiiicient mounting means. The difficulty in obtaining a suitable mounting means becomes apparent when the various conditions which are imposed in the mounting means are considered.
- the mounting means must not unduly lengthen or shorten the cat Whisker because the inductance of the device varies therewith, and is significant at the higher frequencies; the mounting means must maintain the required pressure between the cat Whisker and the crystal to obtain uniform conductivity of the device; the mounting means must restrict the area of the crystal within which the cat Whisker point is pressed so that the conductivity is maintainedA relatively constant.
- a crystal contact device comprising a semiconducting element and a contact member so that an end thereof is properly pressed against the semiconducting element.
- the means for mounting the contact member comprises a tubular member having an elongated .opening wherein a part of the contact member is positioned.
- the contact member is arced Within the tubular member to absorb any minor changes in pressure to which it is subjected.
- the area of the semiconducting member upon which the contact member is pressed, is restricted by the lateral dimension of the opening in the tubular member.
- Fig. 1 is a cross-sectional view of one embodiment of the contact device
- Fig. 2 illustrates a preferred embodiment of my invention
- Figs. 3 and 3A are possible views taken along lines 3-3 of Fig. 1;
- Fig. 4 is still another embodiment of my inventiom Although, for the purpose of describing my invention, there is illustrated a crystal diode, it is to be realized that vthe principles of the invention may be applied in most types of contact devices.
- a crystal diode comprising a hollow housing 1 made of an insulator material such as a ceramic or a plastic. Inside one end of the housing there is positioned irsemiconducting ele- 2,703,856 PatentedV Mar. 8, 1955 ICC bular support member 5.
- the tubular member 5 is preferably made from nickel or stainless steel and may be fastened by means of solder 6, to a second supporting member 7; the member 7 being made of the same ma terial as the supporting member 3.
- the device is hermetically sealed by Wax, plastic or other suitable sealing material 8.
- the ends of the supporting members 3 and 7, respectively, are reduced in cross-sectional area and extend a short distance out of the housing 1, serving as electrical terminals for the device.
- the cat Whisker 4 is positioned in the tubular member 5 and the tubular member is preferably crimped towards one end thereof to properly retain the cat Whisker.
- the tubular member is then Welded or soldered at one end to the supporting member 7.
- the crystal 2 is positioned in the housing and the cat Whisker 4 is suitably pressed against the surface of the crystal 2 by pressure applied against the supporting member 7.
- the area on the crystal within Which the cat Whisker electrode may move before being pressed against the crystal is limited by the lateral dimension of the opening in the tubular member. This, of course, is highly desirable because it permits the reduction of the size of the crystal.
- the arc or bow formed in the cat Whisker offers suflicient resiliency to absorb minor changes in pressure to which it might be subjected.
- the tube may be crimped in any suitable manner to secure the cat Whisker therein.
- the forms of crimping are illustrated in Figs. 3 and 3A.
- Fig. 2 illustrates a second embodiment of the invention which offers certain advantages over the first embodiment.
- the open end of the tubular member 5 is reduced in diameter to further restrict the area within which the cat Whisker may move before being pressed against the crystal 2.
- the supporting members 3 and 7 may be recessed, as shown, to accommodate the crystal 2 and tubular member 5, respectively. By recessing the supporting members, the soldering operation may be simplified by simply pouring the solder into the recessed portions before positioning the respective parts therein.
- FIG. 4 Still another embodiment of my invention is illustrated in Fig. 4.
- the necessary opening is provided by boring a hole 9 in the supporting member 7
- the opening 9 should be approximately the same dimensions as the opening in the tube 5.
- the neck portion 10 may be crimped against the cat Whisker, similarly as in the case of the hollow tube support.
- the inductanceand capacitance of the various parts become significant at very high frequencies.
- the inductance of the device varies with the length of the cat Whisker at very high frequencies and it is apparent that the invention lends itself to permit changes in the length of the cat Whisker Without sacrificing the support of the cat Whisker.
- the capacitance between the support members 3 and 7 respectively becomes appreciable at very high frequencies and this may be simply adjusted, also without sacrificing the support of the cat Whisker.
- the capacity between the support members may be increased by employing the modification illustrated by Figure 4, wherein the members 3 and 7 are spaced comparatively closer together.
- a contact device was designed having the following dimensions: the housing 1 was .375 inch long, .187 inch outside diameter, .125 inch inside diameter, and made of unglazed non-porous ceramic.
- the supporting members 3 and 7 had a diameter of .125 inch, the smaller portions .046 inch, and made of lead plated steel.
- the crystal was germanium having dimensions of .050 x .050x .O20 inch and soldered to the sup-l devicewas sealed by a material known by its trade-mark name Araldite.
- a crystal contact device comprising a housing, a semiconducting element, an elongated conductive contact member, means supporting said semiconductng element and said contact member within said housing such that an end of said member is pressed against said semiconducting element, and means within said housing for limiting the area within which said contact member makes contact on said semiconductng element, characterized in that said last mentioned means comprises a member having an elongated opening therein, a part of said contact member lying within said opening and bearing against a wall thereof, the lateral dimensions of said opening defining said area within which said contact member makes contact to said semiconducting element.
- a crystal contact device comprising a housing, a semiconducting crystal element, a contact electrode, means supporting said crystal element within said housing at 30 one end thereof, an elongated tubular support for said electrode, the electrode lying partially therein and bearing against a wall thereof, means supporting said tubular support within said housing such that an end of said electrode is pressed against said crystal, said contact member bring arced to absorb minor changes in pressure to which it might be subjected.
- tubular support is cylindrically shaped and comprises an end portion of smaller diameter than the remaining p0rtion to further restrict the contacting area on said crystal.
- a crystal contact device comprising a housing, a semiconducting crystal element, a contact electrode, means for supporting said crystal element and said contact electrode within said housing, such that an end of said electrode is pressed against said crystal, an elongated opening in said electrode supporting means, the electrode 1ying partially therein but arced against a wall thereof, whereby the contacting area on said crystal element is restricted by the lateral dimensions of said opening, and means securing said contact electrode within said electrode supporting means.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
BE529310D BE529310A (xx) | 1953-06-03 | ||
US359275A US2703856A (en) | 1953-06-03 | 1953-06-03 | Germanium diode |
GB15834/54A GB750875A (en) | 1953-06-03 | 1954-05-28 | Electric semi-conductor devices |
CH324327D CH324327A (de) | 1953-06-03 | 1954-05-31 | Kristallkontaktvorrichtung |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US359275A US2703856A (en) | 1953-06-03 | 1953-06-03 | Germanium diode |
Publications (1)
Publication Number | Publication Date |
---|---|
US2703856A true US2703856A (en) | 1955-03-08 |
Family
ID=23413115
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US359275A Expired - Lifetime US2703856A (en) | 1953-06-03 | 1953-06-03 | Germanium diode |
Country Status (4)
Country | Link |
---|---|
US (1) | US2703856A (xx) |
BE (1) | BE529310A (xx) |
CH (1) | CH324327A (xx) |
GB (1) | GB750875A (xx) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2799814A (en) * | 1953-09-01 | 1957-07-16 | Sylvania Electric Prod | Germanium photodiode |
US2924870A (en) * | 1955-12-30 | 1960-02-16 | Sprague Electric Co | Capacitor eyelet process |
US3173765A (en) * | 1955-03-18 | 1965-03-16 | Itt | Method of making crystalline silicon semiconductor material |
US3264721A (en) * | 1963-10-11 | 1966-08-09 | Trw Semiconductors Inc | Apparatus for positioning and aligning a plurality of pins |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2495716A (en) * | 1943-10-13 | 1950-01-31 | Int Standard Electric Corp | Rectifier |
-
0
- BE BE529310D patent/BE529310A/xx unknown
-
1953
- 1953-06-03 US US359275A patent/US2703856A/en not_active Expired - Lifetime
-
1954
- 1954-05-28 GB GB15834/54A patent/GB750875A/en not_active Expired
- 1954-05-31 CH CH324327D patent/CH324327A/de unknown
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2495716A (en) * | 1943-10-13 | 1950-01-31 | Int Standard Electric Corp | Rectifier |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2799814A (en) * | 1953-09-01 | 1957-07-16 | Sylvania Electric Prod | Germanium photodiode |
US3173765A (en) * | 1955-03-18 | 1965-03-16 | Itt | Method of making crystalline silicon semiconductor material |
US2924870A (en) * | 1955-12-30 | 1960-02-16 | Sprague Electric Co | Capacitor eyelet process |
US3264721A (en) * | 1963-10-11 | 1966-08-09 | Trw Semiconductors Inc | Apparatus for positioning and aligning a plurality of pins |
Also Published As
Publication number | Publication date |
---|---|
BE529310A (xx) | |
GB750875A (en) | 1956-06-20 |
CH324327A (de) | 1957-09-15 |
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