US2660697A - Selenium rectifier with varnish intermediate layers - Google Patents

Selenium rectifier with varnish intermediate layers Download PDF

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Publication number
US2660697A
US2660697A US247161A US24716151A US2660697A US 2660697 A US2660697 A US 2660697A US 247161 A US247161 A US 247161A US 24716151 A US24716151 A US 24716151A US 2660697 A US2660697 A US 2660697A
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United States
Prior art keywords
varnish
layer
selenium
intermediate layers
rectifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US247161A
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English (en)
Inventor
Lauckner Hans Eugen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Standard Electric Corp
Original Assignee
International Standard Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Standard Electric Corp filed Critical International Standard Electric Corp
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Publication of US2660697A publication Critical patent/US2660697A/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H10D48/046—Provision of discrete insulating layers

Definitions

  • the resistance of the rectifier in the forward direction is reduced by the arrangement of the present invention without impairing the blocking voltage.
  • the arrangement may concern an approximation to the conditions of the point detector and that different current lines may be more decisive for the blocking phase of the rectifier than for the passing phase.
  • Fig. 1 shows a scheme of the current distribution in a system in which a homogeneous body is contacted by another body of a sharp iorm along a small area (point contact).
  • Fig. 2 the homogeneous body is subdivided into two regions of diierent resistivity.
  • Fig. 1 is a sectional view ci a complete cell including base element, semi-conductor, insulating screen layer, and counterelectrode.
  • the scheme of Fig. 1 corresponds to point contact rectiiiers in which the current is flowing in the open or forward direction
  • the scheme of Fig. 2 is an image of the current ow in the inverse direction, where a blocking layer 3 has to be provided.
  • the lines may be supposed to run almost parallelly and to swell out when entering the material of better conductivity.
  • the resistance in the blocked direction will increase to a higher percentage than in the opposite direction when decreasing the contact area.
  • the advantage of the invention may be seen in the process to replace a contact area, given by occasional perforations in a normal blocking layer (artificial or not), by a greater number oi smaller contact areas of an arbitrary defined shape. It should be understood that this; explanation of the advantageous effect of the invention should not exclude another theory o' the function of the device according to the invention.
  • FIG. 5 Another embodiment oi the invention is represented in Fig. 5, where iine points 'l in regular distribution may be produced by a printing process. All gures have not been drawn in true scale. In at least one directionlines in the Width, points in the diameter-thesize of the intermediate lacquer coating should be Aof the order of thickness of the semi--con'du'ctig layer and less.
  • FIG. 1 A complete cell is shown in Fig. 1 having a base element 8, a semi-conductor 9, insulating screen layer I and counter-electrode Il.
  • the insulat-v ing screen layer i0 shown in Fig. 6 is of the form shown in Fig. 3.
  • the thickness of semi-conducting layers 'usdally lies between 0.03 and 0.10 nim.
  • the width of the lacquer stripes in Figure 3 or the diameter of the lacquer dots ih Figure 5 should approximately have these values.
  • the area covered with lacquer shall a'r'niiht to ⁇ Z0-70%, preferably 40-60% of the total area.
  • the higher percentages are to be applied in case of ne rasters only, i. e. for instance in oase of narrow lacquer/stripes.
  • Width alternating with uncovered stripes of 0.15 mm.

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  • Thermistors And Varistors (AREA)
US247161A 1950-09-21 1951-09-18 Selenium rectifier with varnish intermediate layers Expired - Lifetime US2660697A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2660697X 1950-09-21

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US2660697A true US2660697A (en) 1953-11-24

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US247161A Expired - Lifetime US2660697A (en) 1950-09-21 1951-09-18 Selenium rectifier with varnish intermediate layers

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US (1) US2660697A (d)
BE (1) BE505958A (d)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2815475A (en) * 1951-10-29 1957-12-03 Itt Selenium rectifier
US2828453A (en) * 1955-06-15 1958-03-25 Westinghouse Brake & Signal Selenium rectifiers
US3233309A (en) * 1961-07-14 1966-02-08 Siemens Ag Method of producing electrically asymmetrical semiconductor device of symmetrical mechanical design

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE956435C (de) * 1954-01-19 1957-01-17 Siemens Ag Trockengleichrichter

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2485589A (en) * 1944-11-02 1949-10-25 Int Standard Electric Corp Selenium rectifier and photocell

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2485589A (en) * 1944-11-02 1949-10-25 Int Standard Electric Corp Selenium rectifier and photocell

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2815475A (en) * 1951-10-29 1957-12-03 Itt Selenium rectifier
US2828453A (en) * 1955-06-15 1958-03-25 Westinghouse Brake & Signal Selenium rectifiers
US3233309A (en) * 1961-07-14 1966-02-08 Siemens Ag Method of producing electrically asymmetrical semiconductor device of symmetrical mechanical design

Also Published As

Publication number Publication date
BE505958A (d)

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