US2626985A - Electrical crystal unit - Google Patents

Electrical crystal unit Download PDF

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Publication number
US2626985A
US2626985A US46145A US4614548A US2626985A US 2626985 A US2626985 A US 2626985A US 46145 A US46145 A US 46145A US 4614548 A US4614548 A US 4614548A US 2626985 A US2626985 A US 2626985A
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United States
Prior art keywords
envelope
semi
fitting
glass
crystal
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Expired - Lifetime
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US46145A
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Paul E Gates
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GTE Sylvania Inc
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Sylvania Electric Products Inc
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Priority to US46145A priority Critical patent/US2626985A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/041Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction having no base used as a mounting for the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto

Definitions

  • This invention relates to semi-conductor crystal units and the like, for example crystal rectifiers, amplifiers, oscillators and similar devices.
  • the present application discloses features also disclosed in co-pending application Serial No. 50,637, filed September 22, 1948 by Ralph B. Collins, Jr., and in a continuation thereof, Serial No. 74,768, filed February 5, 1949, assigned to the owner of this application.
  • the present application also discloses a construction generically claimed in my copending application, Serial No. 80,358, filed March 9, 1949.
  • An object of the invention is the achievement of a small, compact, inexpensive crystal unit of improved electrical characteristics.
  • a feature of the invention is the enclosure of the crystal in a glass tube sealed at its ends by metal contact pieces extending therethrough.
  • Fig. 1 is a sectional profile of a device being made according to the invention.
  • Fig. 2 is a profile section of a completed device according to the invention.
  • Fig. 3 is a profile section of another embodiment of the invention.
  • Figs. 1 and 2 the crystal of a semi-conductor material such as germanium or silicon, together with suitable impurities such as tin or aluminum, respectively, for example, and having a flat surface 2, is soldered or otherwise affixed at its other surface to the metal-wire or pin 3.
  • a catwhisker point-contact element 4 for example as shown in the copending application Serial No. 492,163 of E. T. Casellini, is in contact with the crystal surface 2, and is attached to the wire 5, sealed through the cuplike glass pins 6, which is in overlapping contact with the similar glass piece 1 over which it fits, and through which wire 3 is sealed.
  • the wires 3 and 5, respectively are gripped in chucks 9 and 8, outside the glass envelope formed by glass pieces 6 and I.
  • chucks 8, 9 may be adjusted laterally, in the manner usual in lathes and the like for example, until the pressure on the contact between the wire and crystal has its proper value, and the chucks may be capable of motion in other directions, if desired, to permit the catwhisker 4 to be moved over the crystal until a satisfactory contact point is found. Heat may then be applied to the overlapping portions III, M of the glass pieces 6, 1, to seal them together. The resultant is shown in Fig. 2.
  • the resultant is shown in Fig. 2.
  • Fig. 3 shows a further embodiment of the invention, in which the glass tube or cup 6 sealed to the wire 5 carrying catwhisker point-contact element 4 is made longer, extending beyond the crystal l, which is now soldered or otherwise affixed to a metal pin l2 which has a threaded or knurled portion I 3 to facilitate handling.
  • Pin I2 is fixed to the metal diaphragm l4, which in turn is fixed to a metal sleeve I5, for example by being set in a groove I6 as shown.
  • Sleeve, fitting or bushing 15 has the outwardly extending flange ll, sealed to the glass tube 6 at the otherwise open end of the latter.
  • the pin I2 is set into the diaphragm l4 until the tension in catwhisker is about correct, and then the pin l2 and diaphragm l4 may be manipulated until a good contact point is found on the crystal.
  • the metal end cap l8, with the pigtail connector wire 19 afiixed thereto, is attached to the metal sleeve I5, for example by solder 20.
  • catwhisker contact and corresponding connecting wire may be used, if the device is intended to be employed as an amplifier.
  • Two catwhiskers may be used side by side, if desired, as in copending application Serial No. 40,561 of S. Amico, or concentrically as in copending application Serial No. 39,665 of F. Koury.
  • glass is used in a broad sense, including fused quartz, for example. With a particular glass, the proper metals or alloys should be used to effect a seal with that glass.
  • a semi-conductor translator having a pointcontact element, a semi-conductor element engaged by said point-contact element, an envelope enclosing said elements, said envelope including a glass wall portion and a metal end cap, a cylindrical metal fitting sealed to said glass wall portion, and a support extending adjustably through said fitting and carrying one of said elements within the envelope and having an engageable portion, said cap being soldered to said fitting and covering the engageable portion of said adjustable support.
  • a semi-conductor translator including an envelope having a glass wall portion and a metal end cap, a pair of translator elements in mutual contact contained within said envelope, one of said elements being a piece of semi-conductive material, a bushing sealed to said envelope having a female threaded portion within the envelope, a male threaded element adjustably secured therein and supporting said semi-conductive material inside the envelope, said metal end cap being joined to said bushing to cover said male threaded element.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Joining Of Glass To Other Materials (AREA)

Description

Jan. 27, 1953 P. E. GATES 2,626,985
ELECTRICAL cnvsm. UNIT Filed Aug. 25. 1948 IN V EN TOR.
Pgu/E Gczfza ATTORNEY Patented Jan 27, 1953 UNITED STATES PATENT OFFICE 2,626,985 ELECTRICAL CRYSTAL UNIT Paul E. Gates, Danvers, Mass., assignor to Sylvania Electric Products Inc., Salem, Mass, a corporation of Massachusetts Application August 25, 1948, Serial No. 46,145
2 Claims. 1
This invention relates to semi-conductor crystal units and the like, for example crystal rectifiers, amplifiers, oscillators and similar devices. The present application discloses features also disclosed in co-pending application Serial No. 50,637, filed September 22, 1948 by Ralph B. Collins, Jr., and in a continuation thereof, Serial No. 74,768, filed February 5, 1949, assigned to the owner of this application. The present application also discloses a construction generically claimed in my copending application, Serial No. 80,358, filed March 9, 1949.
An object of the invention is the achievement of a small, compact, inexpensive crystal unit of improved electrical characteristics.
A feature of the invention is the enclosure of the crystal in a glass tube sealed at its ends by metal contact pieces extending therethrough.
Other features, objects and advantages of the invention will be apparent from the following specification taken in conjunction with the attached drawings in which:
Fig. 1 is a sectional profile of a device being made according to the invention.
Fig. 2 is a profile section of a completed device according to the invention; and
Fig. 3 is a profile section of another embodiment of the invention.
In Figs. 1 and 2 the crystal of a semi-conductor material such as germanium or silicon, together with suitable impurities such as tin or aluminum, respectively, for example, and having a flat surface 2, is soldered or otherwise affixed at its other surface to the metal-wire or pin 3. A catwhisker point-contact element 4, for example as shown in the copending application Serial No. 492,163 of E. T. Casellini, is in contact with the crystal surface 2, and is attached to the wire 5, sealed through the cuplike glass pins 6, which is in overlapping contact with the similar glass piece 1 over which it fits, and through which wire 3 is sealed. The wires 3 and 5, respectively are gripped in chucks 9 and 8, outside the glass envelope formed by glass pieces 6 and I. These chucks 8, 9 may be adjusted laterally, in the manner usual in lathes and the like for example, until the pressure on the contact between the wire and crystal has its proper value, and the chucks may be capable of motion in other directions, if desired, to permit the catwhisker 4 to be moved over the crystal until a satisfactory contact point is found. Heat may then be applied to the overlapping portions III, M of the glass pieces 6, 1, to seal them together. The resultant is shown in Fig. 2. The
2 envelopes 6, I need not be evacuated. A filling of ordinary air at atmospheric pressure is generally satisfactory, although other fillings may be used if desired.
Fig. 3 shows a further embodiment of the invention, in which the glass tube or cup 6 sealed to the wire 5 carrying catwhisker point-contact element 4 is made longer, extending beyond the crystal l, which is now soldered or otherwise affixed to a metal pin l2 which has a threaded or knurled portion I 3 to facilitate handling. Pin I2 is fixed to the metal diaphragm l4, which in turn is fixed to a metal sleeve I5, for example by being set in a groove I6 as shown. Sleeve, fitting or bushing 15 has the outwardly extending flange ll, sealed to the glass tube 6 at the otherwise open end of the latter. The pin I2 is set into the diaphragm l4 until the tension in catwhisker is about correct, and then the pin l2 and diaphragm l4 may be manipulated until a good contact point is found on the crystal. The metal end cap l8, with the pigtail connector wire 19 afiixed thereto, is attached to the metal sleeve I5, for example by solder 20.
Various departures or modifications may be made in the described embodiments without departing from the spirit of the invention. For example, more than one catwhisker contact and corresponding connecting wire may be used, if the device is intended to be employed as an amplifier. Two catwhiskers may be used side by side, if desired, as in copending application Serial No. 40,561 of S. Amico, or concentrically as in copending application Serial No. 39,665 of F. Koury.
The word glass is used in a broad sense, including fused quartz, for example. With a particular glass, the proper metals or alloys should be used to effect a seal with that glass.
What I claim is:
1. A semi-conductor translator having a pointcontact element, a semi-conductor element engaged by said point-contact element, an envelope enclosing said elements, said envelope including a glass wall portion and a metal end cap, a cylindrical metal fitting sealed to said glass wall portion, and a support extending adjustably through said fitting and carrying one of said elements within the envelope and having an engageable portion, said cap being soldered to said fitting and covering the engageable portion of said adjustable support.
2. A semi-conductor translator including an envelope having a glass wall portion and a metal end cap, a pair of translator elements in mutual contact contained within said envelope, one of said elements being a piece of semi-conductive material, a bushing sealed to said envelope having a female threaded portion within the envelope, a male threaded element adjustably secured therein and supporting said semi-conductive material inside the envelope, said metal end cap being joined to said bushing to cover said male threaded element.
- PAUL E. GATES.
REFERENCES CITED Number D. 156,501 5 756,676 962,262 2,130,309 2,154,542 2,431,139 10 2,438,110
Number UNITED STATES PATENTS Name Date Gates Dec. 20, 1949 Midgley Apr. 5, 1904 Schloemilch et a1. June 21, 1910 Nergaard Sept. 13, 1938 Swanson Apr. 18, 1939 Retherford et a1. Nov. 18, 1947 Brattain Mar. 23, 1948 FOREIGN PATENTS Country Date England May 11, 1926

Claims (1)

1. A SEMI-CONDUCTOR TRANSLATOR HAVING A POINTCONTACT ELEMENT, A SEMI-CONDUCTOR ELEMENT ENGAGED BY SAID POINT-CONTACT ELEMENT, AN ENVELOPE ENCLOSING SAID ELEMENTS, SAID ENVELOPE INCLUDING A GLASS WALL PORTION AND A METAL END CAP, A CYLINDRICAL METAL FITTING SEALED TO SAID GLASS WALL PORTION, AND A SUPPORT EXTENDING ADJUSTABLY THROUGH SAID FITTING AND CARRYING ONE OF SAID ELEMENTS WITHIN THE ENVELOPE AND HAVING AN ENGAGEABLE PORTION, SAID CAP BEING SOLDERED TO SAID FITTING AND COVERING THE ENGAGEABLE PORTION OF SAID ADJUSTABLE SUPPORT.
US46145A 1948-08-25 1948-08-25 Electrical crystal unit Expired - Lifetime US2626985A (en)

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Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2697805A (en) * 1949-02-05 1954-12-21 Sylvania Electric Prod Point contact rectifier
US2699594A (en) * 1952-02-27 1955-01-18 Sylvania Electric Prod Method of assembling semiconductor units
US2785349A (en) * 1951-06-08 1957-03-12 Int Standard Electric Corp Electric semi-conducting devices
US2790941A (en) * 1952-03-27 1957-04-30 Sylvania Electric Prod Terminal lead construction and method, and semiconductor unit
US2819513A (en) * 1953-11-03 1958-01-14 Stuart T Martin Semi-conductor assembly and method
US2825856A (en) * 1953-05-29 1958-03-04 Sylvania Electric Prod Sealed semiconductor devices
US2827598A (en) * 1953-03-19 1958-03-18 Raytheon Mfg Co Method of encasing a transistor and structure thereof
US2835853A (en) * 1953-12-19 1958-05-20 Philips Corp Semi-conductor electrode system
US2844769A (en) * 1953-12-24 1958-07-22 Philips Corp Semi-conductor electrode systems
DE1042132B (en) * 1954-05-07 1958-10-30 Telefunken Gmbh Process for the production of crystallodes
US2859394A (en) * 1953-02-27 1958-11-04 Sylvania Electric Prod Fabrication of semiconductor devices
DE1043515B (en) * 1953-10-01 1958-11-13 Siemens Ag Method for producing a semiconductor arrangement accommodated in a vacuum-tight sealed housing filled with potting compound
US2958720A (en) * 1955-03-25 1960-11-01 Dearborn Electronic Lab Of Del Capacitor end seal
US3128529A (en) * 1958-06-09 1964-04-14 Saegertown Glasseals Inc Machine for assembling electrical components
US3165812A (en) * 1961-09-27 1965-01-19 Tokyo Shibaura Electric Co Method of manufacturing glass diodes
US20030010063A1 (en) * 2001-07-12 2003-01-16 Reagh Valentine H. Ornamental glass object and method of fabrication

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US756676A (en) * 1902-11-10 1904-04-05 Internat Wireless Telegraph Company Wave-responsive device.
US962262A (en) * 1906-04-14 1910-06-21 Drahtlose Telegraphie Gmbh Wave-detector for wireless telegraphy.
GB251706A (en) * 1925-02-11 1926-05-11 Percie Vaughan Castell Evans A method of mounting crystals for wireless rectification
US2130309A (en) * 1937-09-18 1938-09-13 Rca Corp Current conductor support
US2154542A (en) * 1938-02-15 1939-04-18 Swanson Harold Electric incandescent high pressure gas metallic vapor lamp
US2431139A (en) * 1943-06-23 1947-11-18 Westinghouse Electric Corp Magnetron
US2438110A (en) * 1943-07-28 1948-03-23 Bell Telephone Labor Inc Electrical translating materials and devices and method of making them

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US756676A (en) * 1902-11-10 1904-04-05 Internat Wireless Telegraph Company Wave-responsive device.
US962262A (en) * 1906-04-14 1910-06-21 Drahtlose Telegraphie Gmbh Wave-detector for wireless telegraphy.
GB251706A (en) * 1925-02-11 1926-05-11 Percie Vaughan Castell Evans A method of mounting crystals for wireless rectification
US2130309A (en) * 1937-09-18 1938-09-13 Rca Corp Current conductor support
US2154542A (en) * 1938-02-15 1939-04-18 Swanson Harold Electric incandescent high pressure gas metallic vapor lamp
US2431139A (en) * 1943-06-23 1947-11-18 Westinghouse Electric Corp Magnetron
US2438110A (en) * 1943-07-28 1948-03-23 Bell Telephone Labor Inc Electrical translating materials and devices and method of making them

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2697805A (en) * 1949-02-05 1954-12-21 Sylvania Electric Prod Point contact rectifier
US2785349A (en) * 1951-06-08 1957-03-12 Int Standard Electric Corp Electric semi-conducting devices
US2699594A (en) * 1952-02-27 1955-01-18 Sylvania Electric Prod Method of assembling semiconductor units
US2790941A (en) * 1952-03-27 1957-04-30 Sylvania Electric Prod Terminal lead construction and method, and semiconductor unit
US2859394A (en) * 1953-02-27 1958-11-04 Sylvania Electric Prod Fabrication of semiconductor devices
US2827598A (en) * 1953-03-19 1958-03-18 Raytheon Mfg Co Method of encasing a transistor and structure thereof
US2825856A (en) * 1953-05-29 1958-03-04 Sylvania Electric Prod Sealed semiconductor devices
DE1043515B (en) * 1953-10-01 1958-11-13 Siemens Ag Method for producing a semiconductor arrangement accommodated in a vacuum-tight sealed housing filled with potting compound
US2819513A (en) * 1953-11-03 1958-01-14 Stuart T Martin Semi-conductor assembly and method
US2835853A (en) * 1953-12-19 1958-05-20 Philips Corp Semi-conductor electrode system
US2844769A (en) * 1953-12-24 1958-07-22 Philips Corp Semi-conductor electrode systems
DE1042132B (en) * 1954-05-07 1958-10-30 Telefunken Gmbh Process for the production of crystallodes
US2958720A (en) * 1955-03-25 1960-11-01 Dearborn Electronic Lab Of Del Capacitor end seal
US3128529A (en) * 1958-06-09 1964-04-14 Saegertown Glasseals Inc Machine for assembling electrical components
US3165812A (en) * 1961-09-27 1965-01-19 Tokyo Shibaura Electric Co Method of manufacturing glass diodes
US20030010063A1 (en) * 2001-07-12 2003-01-16 Reagh Valentine H. Ornamental glass object and method of fabrication
US6732548B2 (en) * 2001-07-12 2004-05-11 Valentine H. Reagh Ornamental glass object and method of fabrication

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