US2475940A - Crystal contact - Google Patents

Crystal contact Download PDF

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Publication number
US2475940A
US2475940A US727773A US72777347A US2475940A US 2475940 A US2475940 A US 2475940A US 727773 A US727773 A US 727773A US 72777347 A US72777347 A US 72777347A US 2475940 A US2475940 A US 2475940A
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US
United States
Prior art keywords
crystal
wire
contact
metal
tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US727773A
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English (en)
Inventor
Brittain Francis Hugh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co PLC
Original Assignee
General Electric Co PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB1077945A external-priority patent/GB591092A/en
Application filed by General Electric Co PLC filed Critical General Electric Co PLC
Application granted granted Critical
Publication of US2475940A publication Critical patent/US2475940A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/228—Terminals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched

Definitions

  • This invention relates to crystal contacts of the typein-which oneelementis a semi-conducting crystalandthe other elementis the end of a metal wirewhich presses resiliently against a-surface of the crystal; the resilience may arise'from flexibility of the metal wire or resilient mounting either of the crystal or of the wire or both.
  • the invention relates also to the manufacture of crystal contacts of this type.
  • thermoplastic material such as polystyrene
  • this difficulty of expansion of the sealing solid may be substantially avoided by using as the solid, a thin layer of polymerized n-butyl methacrylate; this substance has the unique property of remaining soft and sufliciently wire so tightly as to carry the'wire-with it when expandingorcontracting; the substance is however sufilciently hard and solid to' prevent lateral displacement of the-end of the wire and moreover has a low dielectric loss up to frequencies exceeding 3000 mc./s.
  • the layer'of polymerized n-butyl methacrylate should preferably 'be so thin that it does not extend along the wire appreciably beyond the actual pointed tip.
  • the layer of-heat-polymerisable liquid n-butyl methacrylate is preferably first applied to the surface ofthe crystal, the end of the wire is then applied to the surface of the crystal through the layer of liquid and is adjusted to its final position, and the liquid is thereafter polymerized by heat to form the said thin layer solid of nbutyl methacrylate.
  • the crystal was located in a metal cap at One end of a hollow ceramic tube of diameter about 3 mms. and length about 7 mms.; the area of the contact surface of the crystal was about 0.75 mm.
  • a single drop of n-butyl methacrylate was then dropped down the tube on to the surface of the crystal, the viscosity of the liquid being adjusted by suitable thinning with n-butyl methacrylate stabilised monomer to give a drop of size about 1 cubic millimeter.
  • the tungsten wire used was pointed at one end and welded at its other end to the end of a nickel rod passing loosely through a hole in a second cap; the diameter of the wire away from the point was 0.2 mm. and its length from point of support, i. e. the end of the nickel rod, to pointed tip was 3 mms.; an S-bend in the wire, provided for flexibility, reduced its effective length to about 1 mm.
  • the rod and wire were inserted into the ceramic tube so that the pointed end of the wire pressed through the liquid layer against the surface of the crystal and the second cap was secured to the ceramic tube; the pointed end of the wire was then adjusted to the required position on the surface of the crystal by adjustment of the end of the nickel rod protruding through the metal cap and the rod was secured by solder to the cap in this position.
  • the whole capsule was then heated in an oven for about eight hours at 70-90 C. to polymerise the n-butyl methacrylate and form the solid layer fixing the pointed end of the wire in position on the surface of the crystal.
  • the silicon crystal l is held in a recess in a metal cap 2 by means of easily fusible metal 3 which is efiectively soldered to the walls of the recess and to the lower surface of the crystal, which is metallised.
  • the cap 2 is united to one end of a ceramic tube 4 by soldering to a metallised surface of the ceramic tube so that the contact surface 5 of the crystal is presented to the interior of the tube.
  • the other end of the tube is closed by a second metal cap 6 which is suitably united to the tube by soldering to metallised surfaces of the tube; a tungsten rod 1 is soldered into an axial hole in the cap 6 and one end of the rod projects within the tube; to this projecting end is welded one end of an S-shaped tungsten wire whisker 8 the other end of which is pointed and abuts against the contact surface of the crystal.
  • the pointed end of the wire is fixed in position on the contact surface of the crystal by the layer 9 of polymerised n-butyl methacrylate which covers the contact surface and encloses the tip of the tungsten wire whisker.
  • a thin layer of solid polymerised n-butyl methacrylate covering the surface of the crystal around the end of the metal wire, said layer closely surrounding the wire as to prevent lateral displacement of said end of the wire relative to the surface of the crystal.
  • a crystal contact capsule comprising a hollow insulating tube, a first metal cap disposed to close off one end of said tube, a second metal cap disposed to close off the second end of said tube, means to fix each said metal cap to the tube, a semi-conducting crystal, means to support said crystal in said first cap, a metal rod, means to support said metal rod in said second cap, a metal wire whisker having one end thereof attached to said metal rod, said whisker being bent for resiliency, the other end of said whisker abutting against a surface of the crystal, a thin layer of solid polymerised n-butyl methacrylate covering said surface of the crystal around the end of the wire whisker, said layer closely surrounding the wire so as to prevent lateral displacement of said end of the wire relative to the surface of the crystal.
  • a method of manufacturing a crystal contact comprising the steps of applying a thin layer of heat polymerisable n-butyl methacrylate to the surface of a semiconducting crystal, applying the end of a metal wire whisker to said surface of the crystal through said layer of n-butyl methacrylate, adjusting said whisker to its final position, and thereafter polymerising said n-butyl methacrylate to form a thin layer of solid polymerised n-butyl methacrylate covering the surface of the crystal around the end of the metal wire whisker so as to closely surround said wire whisker with said layer and thereby prevent lateral displacement of said end of the wire whisker relative to the surface of the crystal.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Mechanical Coupling Of Light Guides (AREA)
US727773A 1945-04-28 1947-02-11 Crystal contact Expired - Lifetime US2475940A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1077945A GB591092A (en) 1945-04-28 Improvements in or relating to crystal contacts for use, for example, as rectifiers

Publications (1)

Publication Number Publication Date
US2475940A true US2475940A (en) 1949-07-12

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ID=9974101

Family Applications (1)

Application Number Title Priority Date Filing Date
US727773A Expired - Lifetime US2475940A (en) 1945-04-28 1947-02-11 Crystal contact

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US (1) US2475940A (es)
NL (1) NL66549C (es)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2639380A (en) * 1952-05-01 1953-05-19 Hollmann Hans Erich Electrical device and method of preparation
US2682022A (en) * 1949-12-30 1954-06-22 Sylvania Electric Prod Metal-envelope translator
US2697806A (en) * 1949-03-09 1954-12-21 Sylvania Electric Prod Glass enclosed electrical translator
US2697805A (en) * 1949-02-05 1954-12-21 Sylvania Electric Prod Point contact rectifier
US2748326A (en) * 1950-03-28 1956-05-29 Sylvania Electric Prod Semiconductor translators and processing
US2751529A (en) * 1952-08-26 1956-06-19 Philco Corp Point contact semiconductive device
US2753497A (en) * 1951-08-03 1956-07-03 Westinghouse Brake & Signal Crystal contact rectifiers
US2798189A (en) * 1953-04-16 1957-07-02 Sylvania Electric Prod Stabilized semiconductor devices
DE1021491B (de) * 1953-12-21 1957-12-27 Licentia Gmbh Verfahren zum Herstellen einer elektrisch unsymmetrisch leitenden Halbleiteranordnung
US2825015A (en) * 1954-04-12 1958-02-25 Philco Corp Contacting arrangement for semiconductor device and method for the fabrication thereo
DE1029937B (de) * 1953-08-28 1958-05-14 Kieler Howaldtswerke Ag Verfahren zur Herstellung von Spitzendioden kleinster Abmessungen
US2888619A (en) * 1955-05-20 1959-05-26 John P Hammes Semiconductor devices
US3127659A (en) * 1960-11-04 1964-04-07 Microwave Ass Method of manufacturing point contact semiconductor devices

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1214265A (en) * 1917-01-30 Milton Berel Detector for wireless systems.
US1537856A (en) * 1922-09-16 1925-05-12 Michels Frederick Crystal detector
US1586828A (en) * 1923-11-26 1926-06-01 Andrew H Miller Radiodetector
US2406405A (en) * 1941-05-19 1946-08-27 Sperry Gyroscope Co Inc Coaxial condenser crystal and method of making same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1214265A (en) * 1917-01-30 Milton Berel Detector for wireless systems.
US1537856A (en) * 1922-09-16 1925-05-12 Michels Frederick Crystal detector
US1586828A (en) * 1923-11-26 1926-06-01 Andrew H Miller Radiodetector
US2406405A (en) * 1941-05-19 1946-08-27 Sperry Gyroscope Co Inc Coaxial condenser crystal and method of making same

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2697805A (en) * 1949-02-05 1954-12-21 Sylvania Electric Prod Point contact rectifier
US2697806A (en) * 1949-03-09 1954-12-21 Sylvania Electric Prod Glass enclosed electrical translator
US2682022A (en) * 1949-12-30 1954-06-22 Sylvania Electric Prod Metal-envelope translator
US2748326A (en) * 1950-03-28 1956-05-29 Sylvania Electric Prod Semiconductor translators and processing
US2753497A (en) * 1951-08-03 1956-07-03 Westinghouse Brake & Signal Crystal contact rectifiers
US2639380A (en) * 1952-05-01 1953-05-19 Hollmann Hans Erich Electrical device and method of preparation
US2751529A (en) * 1952-08-26 1956-06-19 Philco Corp Point contact semiconductive device
US2798189A (en) * 1953-04-16 1957-07-02 Sylvania Electric Prod Stabilized semiconductor devices
DE1029937B (de) * 1953-08-28 1958-05-14 Kieler Howaldtswerke Ag Verfahren zur Herstellung von Spitzendioden kleinster Abmessungen
DE1021491B (de) * 1953-12-21 1957-12-27 Licentia Gmbh Verfahren zum Herstellen einer elektrisch unsymmetrisch leitenden Halbleiteranordnung
US2825015A (en) * 1954-04-12 1958-02-25 Philco Corp Contacting arrangement for semiconductor device and method for the fabrication thereo
US2888619A (en) * 1955-05-20 1959-05-26 John P Hammes Semiconductor devices
US3127659A (en) * 1960-11-04 1964-04-07 Microwave Ass Method of manufacturing point contact semiconductor devices

Also Published As

Publication number Publication date
NL66549C (es)

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