Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
  • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
  • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
  • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02518—Deposited layers
  • H01L21/02521—Materials
  • H01L21/02524—Group 14 semiconducting materials
  • H01L21/02532—Silicon, silicon germanium, germanium
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02518—Deposited layers
  • H01L21/0257—Doping during depositing
  • H01L21/02573—Conductivity type
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02656—Special treatments
  • H01L21/02664—Aftertreatments
  • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10S420/00—Alloys or metallic compositions
  • Y10S420/903—Semiconductive

Definitions

• This invention relates to the manufacture of silicon material for crystal contacts, suitable for use as electric rectifiers and mixers.
• a process of manufacturing semi-conducting material for crystal contacts comprising the step of melting silicon together wi h a small amount of additive, for example aluminium or beryllium or a mixture of aluminium and beryllium. and cooling the melt slowlv to produce a solid p oduct.
• a process of manufacturing semi-conducting material for crystal contacts comprising the step of melting silicon together wi h a small amount of additive, for example aluminium or beryllium or a mixture of aluminium and beryllium. and cooling the melt slowlv to produce a solid p oduct.
• the product may be heated in air, but of course a neutral or reducing atmosphere may be used if it is desirable for any reason; the choice of atmosphere will-only affect an outer skin of the product.
• cool slowly in the foregoing statement is correlative to the term quench rapidly; it implies that the rate of cooling during the slow cooling is much less than in the rapid quenchg
• the minimum temperature at which the heat treat- 2 ment will produce the desired result is that at which the additive is completely soluble in the silicon. Since the solubility is a maximum at the eutectic temperature, the said minimum temperature cannot be higher than the eutectic temperature, which is about 575 C. for aluminium and 1090 C. for beryllium.
• the eutectic temperature of the system aluminium-beryl]ium-silicon appears not to be known. We have found that, when the additive is 3 1% of aluminium, heating at 575-580 C. for several hours will produce the desired result. But if the amount of the addi-- tive is less than that corresponding to the eutectic (which will certainly be the case when the additive is beryllium), the minimum temperature may be muchbelow the eutectic temperature; more over there is no reason why temperatures approaching the minimum should be used. Accordingly these theoretical considerations are of little value as a guide to practice.
• the additive is aluminium or beryllium or a mixture of the two (We have found A;% aluminium and [2% beryllium very suitable), maintaining the product at 1050 C. for one hour and then quenching in water has been found to produce the desired uniformity; we know of no reason why any other heat treatment should be used.
• the additive should be added in the form of metal mixed with the silicon before the melt.
• the additive especially when it is or contains beryllium, may be introduced into the silicon partly or wholly by reaction of the silicon during the melting with, the material of the crucible in which the melting takes place.
• the method by which the additive is introduced into the melt is irrelevant to the invention; and we desire it to be understood that in the foregoing statement of the invention and in the appended claims, the phrase melting silicon together with a small amount of additive is to be interpreted to include any step in which a mixture of s licon and the additive is maintained for an appreciable time in the molten state.
• a process of manufacturing semi-conduct ing material for crystal contacts comprising the step of melting silicon together with a small amount of additive, and cooling the melt slowly to produce a solid product, which comprises the further step, performed before the solid product is divided into pieces each suitable for a single contact, of maintaining the solid product for a considerable time at a temperature greatly above atmospheric temperature, but below the melting point of the product, and then quenching the product rapidly, the time and temperature of this heat treatment being chosen so that the additive is distributed approximately uniformly in the quenched product.
• a process of manufacturing semi-conducting material for crystal contacts comp-rising the step of melting silicon together with a small amount of aluminium, and cooling the melt slowly to produce a solid product, which comprises the further step, performed before the solid product is divided into pieces each suitable for a single contact, of maintaining the solid product for a considerable time at a temperature greatly above atmospheric temperature, but below the melting point of the product, and then quenching the product rapidly, the time and temperature of this heat treatment being chosen so that the aluminium is distributed approximately uniformly in the quenched product.
• a process of manufacturing semi-conducting material for crystal contacts comprising the step of melting silicon together with a small amount of beryllium, and cooling the melt slowly to produce a solid product, which comprises the further step, performed before the solid product is divided into pieces each suitable for a single contact, of maintaining the solid product for a considerable time at a temperature greatly above atmospheric temperature, but below the melting point of the product, and then quenching the product rapidly, the time and temperature of this heat treatment being chosen so that the beryllium is distributed approximately uniformly in the quenched product.
• a process of manufacturing semi-conducting material for crystal contacts comprising the step of melting silicon together with a small amount of a mixture of aluminium and beryllium, and cooling the melt slowly to produce a solid product, which comprises the further step, performed before the solid product is divided into pieces each suitable for a single contact, of maintaining the solid product for a considerable time at a temperature greatly above atmospheric temperature, but below the melting point of the product, and then quenching the product rapidly, the time and temperature of this heat treatment being chosen so that the mixture of aluminium.
• a process of manufacturing semi-conducting material for crystal contacts comprising the step of melting silicon together with a small amount of aluminium, and cooling the melt slowly to produce a solid product, which comprises the further step, performed before the solid product is divided into pieces each suitable for a single contact, of maintaining the solid product for one hour at a temperature of 1050" C. and then quenching the product rapidly.
• a process of manufacturing semi-conducting material for crystal contacts comprising the step of melting silicon together with a small amount of beryllium, and cooling the melt slowly to produce a solid product, which comprises the further step, performed before the solid product is divided into pieces each suitable for a single contact, of maintaining the solid product for one hour at a temperature of 1050 C. and then quenching the product rapidly.
• a process of manufacturing semi-conducting material for crystal contacts comprising the step of melting silicon together with a small amount of a mixture of aluminium and beryllium, and cooling the melt slowly to produce a solid product, which comprises the further step, performed before the solid product is divided into pieces each suitable for a single contact, of maintaining the solid product for one hour at a temperature of 1050 C. and then quenching the product rapidly.

Landscapes

• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• General Physics & Mathematics (AREA)
• Computer Hardware Design (AREA)
• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• Manufacturing & Machinery (AREA)
• Chemical & Material Sciences (AREA)
• Crystallography & Structural Chemistry (AREA)
• Ceramic Engineering (AREA)
• Contacts (AREA)
• Conductive Materials (AREA)
• Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
• Crystals, And After-Treatments Of Crystals (AREA)

Applications Claiming Priority (1)

Publications (1)

Family

ID=10077194

Family Applications (1)

Country Status (6)

Cited By (8)

Families Citing this family (2)

• 0
  • NL NL67322D patent/NL67322C/xx active
  • BE BE466804D patent/BE466804A/xx unknown
• 1941
  • 1941-12-19 GB GB16431/41A patent/GB577976A/en not_active Expired
• 1942
  • 1942-12-10 US US468577A patent/US2428992A/en not_active Expired - Lifetime
• 1946
  • 1946-06-11 FR FR927777D patent/FR927777A/fr not_active Expired
  • 1946-08-21 CH CH263777D patent/CH263777A/de unknown

Non-Patent Citations (1)

Also Published As

Similar Documents